JPH04357881A - Semiconductor pressure sensor wafer and manufacture thereof - Google Patents

Semiconductor pressure sensor wafer and manufacture thereof

Info

Publication number
JPH04357881A
JPH04357881A JP13266191A JP13266191A JPH04357881A JP H04357881 A JPH04357881 A JP H04357881A JP 13266191 A JP13266191 A JP 13266191A JP 13266191 A JP13266191 A JP 13266191A JP H04357881 A JPH04357881 A JP H04357881A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
pressure sensor
semiconductor pressure
sensor wafer
manufacture
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13266191A
Inventor
Michihiro Mizuno
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Abstract

PURPOSE: To obtain a semiconductor pressure sensor wafer and a method for manufacturing the same, in which a semiconductor pressure sensor can be easily manufactured.
CONSTITUTION: An alignment through hole 10 is provided at a semiconductor pressure sensor wafer 1 corresponding to an alignment through hole 6a formed in a glass base 5. Since cavities 3 and pressure introducing through holes 6 correspond to each other one-to-one merely by bringing the holes 10, 6a into coincidence, the wafer 1 can easily be aligned with the base 5 in a short time. As a result, a semiconductor pressure sensor can easily be manufactured.
COPYRIGHT: (C)1992,JPO&Japio
JP13266191A 1991-06-04 1991-06-04 Semiconductor pressure sensor wafer and manufacture thereof Pending JPH04357881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13266191A JPH04357881A (en) 1991-06-04 1991-06-04 Semiconductor pressure sensor wafer and manufacture thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13266191A JPH04357881A (en) 1991-06-04 1991-06-04 Semiconductor pressure sensor wafer and manufacture thereof
DE19924211247 DE4211247C2 (en) 1991-06-04 1992-04-03 thereof equipped with diaphragm pressure sensor elements, semiconductor wafer and method for manufacturing

Publications (1)

Publication Number Publication Date
JPH04357881A true true JPH04357881A (en) 1992-12-10

Family

ID=15086544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13266191A Pending JPH04357881A (en) 1991-06-04 1991-06-04 Semiconductor pressure sensor wafer and manufacture thereof

Country Status (2)

Country Link
JP (1) JPH04357881A (en)
DE (1) DE4211247C2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4321804A1 (en) * 1993-06-30 1995-01-12 Ranco Inc A process for the manufacture of small devices
US5604160A (en) * 1996-07-29 1997-02-18 Motorola, Inc. Method for packaging semiconductor devices
DE19700773A1 (en) 1997-01-13 1998-07-16 Bosch Gmbh Robert Membrane for a pressure sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3764950A (en) * 1972-07-17 1973-10-09 Fairchild Camera Instr Co Methods for making semiconductor pressure transducers and the resulting structures
JPH073380B2 (en) * 1983-05-31 1995-01-18 株式会社日立製作所 Integrated pressure sensor
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor

Also Published As

Publication number Publication date Type
DE4211247C2 (en) 1996-04-25 grant
DE4211247A1 (en) 1992-12-10 application

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