WO1994018356A1 - Method of manufacturing a glass substrate for a thin film - Google Patents

Method of manufacturing a glass substrate for a thin film Download PDF

Info

Publication number
WO1994018356A1
WO1994018356A1 PCT/US1994/001278 US9401278W WO9418356A1 WO 1994018356 A1 WO1994018356 A1 WO 1994018356A1 US 9401278 W US9401278 W US 9401278W WO 9418356 A1 WO9418356 A1 WO 9418356A1
Authority
WO
WIPO (PCT)
Prior art keywords
glass substrate
thin film
film
silicon oxide
ozone
Prior art date
Application number
PCT/US1994/001278
Other languages
French (fr)
Inventor
Katsuyoshi Harada
Satoshi Hattori
Original Assignee
Watkins-Johnson Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Watkins-Johnson Company filed Critical Watkins-Johnson Company
Publication of WO1994018356A1 publication Critical patent/WO1994018356A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd

Definitions

  • the present invention relates to a method of processing a glass substrate on which a thin film is to be formed, and more particularly to a method of smoothing a surface of a glass substrate onto which is formed a fine thin film pattern for a semiconductor device or the like.
  • Thin film semiconductor devices such as thin film transistors, glass masks used in the fabrication of semiconductor devices and the like are conventionally manufactured by using glass substrates having a surface smoothed in advance by a fine lapping process or the like.
  • a method for overcoming this drawback has been proposed. It has been proposed that a film of silicon oxide be formed on a glass substrate by chemical vapor disposition using trialkoxysilane and ozone, at temperatures in the vicinity of 500°C. This method is not practical, because cracks may be generated in the film of silicon oxide when it is formed on a glass substrate having a temperature in the vicinity of 500°C.
  • alkali metal ions are present in the glass substrate, they transfer from the glass substrate into the thin film when the thin film is formed directly on the glass substrate, hindering the normal operation of thin film semiconductor devices.
  • an object of the present invention is to provide a method of processing a glass substrate for a thin film in which the surface of the glass substrate is coated with a stable thin film at a low temperature, thereby smoothing the surface of the glass substrate as well as stopping the transfer of the alkali metal ions in the glass substrate into thin film.
  • the present invention is characterized in that a film of silicon oxide is formed on a surface of a glass substrate for a thin film by chemical vapor deposition using trialkoxysilane and ozone at a low temperature, thereby smoothing the surface of the glass surface. Further, the invention is characterized in that the temperature of the glass substrate is maintained in the range of 100-400°C.
  • Figure 1 is a schematic view in cross section of an amorphous silicon thin film transistor of a reverse stagger type.
  • Figure 2 is a graph showing the linkage current of a film of silicon oxide formed in accordance with the invention.
  • FIG 1 is a schematic view showing a cross section of an amorphous silicon thin film transistor of a reverse stagger type (hereinafter referred to as an "amorphous silicon TFT") to which the present invention is applied.
  • amorphous silicon TFT amorphous silicon thin film transistor of a reverse stagger type
  • a film 11 of silicon oxide is formed on a glass substrate 10 made of Corning 7059 under the following conditions in order to make the upper surface of the glass substrate 10 smooth.
  • a gas mixture obtained by introducing 2.0 liters/min. of nitrogen gas into triethoxysilane, which has been preheated to 45°C, for bubbling, and 7.5 liters/ min. of oxygen containing 4.5% of ozone are mixed with 18 liters/min. of nitrogen gas for dilution to obtain a reaction gas.
  • the reaction gas is introduced onto the surface of the glass substrate 10 which has been heated to 260°C.
  • Triethoxysilane and ozone in the reaction gas are allowed to react to form a film 11 of silicon oxide having a thickness of about 1 ⁇ m on the surface of the glass substrate 10. Since the film 11 of silicon oxide has sufficient fluidity, irregularities such as pinholes and protrusions are effectively reduced. Accordingly, a glass substrate having a very smooth surface can be obtained.
  • the film 11 of silicon oxide is formed at a low temperature, the film 11 has a high density, as is clearly seen from the leak current, shown in Fig. 2, which proves that the quality of the glass substrate is suitable for being formed with a thin film. Further, since the formation of the film 11 of silicon oxides is carried out at a low temperature of 260°C, cracks are hardly generated in the glass substrate when the glass substrate is subjected to thermal stress during the formation of a thin film.
  • a film of aluminum having a thickness of 1500 A is formed as a gate electrode 12 on the film 11 of silicon oxide by a vacuum evaporation.
  • a film of silicon oxide having a thickness of about 2000 A is formed as a gate oxide layer 13 on the gate electrode 12 under the same conditions as those in the above-described process.
  • a film 14 of amorphous silicon having a thickness of 2000 A is formed on the surface of the gate oxide layer 13 by plasma CVD only in an area above the gate electrode 12.
  • a film of silicon oxide is formed on the film 14 of amorphous silicon as a channel protective layer 15, only in an area above the gate electrode 12, under conditions similar to those in the formation of the gate oxide layer 13. Since the temperature during the formation process is relatively low, namely 260°C, the glass substrate is prevented from being damaged, as described above. Further, dehydrogenation of the amorphous silicon film can be prevented.
  • a source electrode 16 made of a chromium film and a drain electrode 17 made of an aluminum film, each having a thickness of about 1500 A are formed on the film 14 of amorphous silicon on both sides of the film 15 of silicon oxide, whereby an amorphous silicon TFT is formed on the glass substrate 10.
  • the amorphous silicon TFT is formed on the glass substrate which is coated with a film of silicon oxide having a high density, an amorphous silicon TFT having excellent characteristics can be produced with a high yield without being affected by the irregularity of the glass substrate. Further, since the film of silicon oxide coated on the glass substrate from transferring into the TFT, the electric characteristics of the amorphous silicon TFT can be stably maintained.
  • a silicon oxide film is formed on the surface of a glass substrate which is heated at 260°C.
  • the glass substrate may be heated at a different temperature' in the range of 100 to 400°C, preferably 150 to 260°C.
  • a glass substrate which is smoothed by the method according to the present invention is used for the production of an amorphous silicon TFT of a reverse stagger type.
  • the same effects can be obtained in cases where the smoothed glass substrate is used for the production of' other thin film devices such as amorphous silicon TFT's of the other types, polycrystalline silicon TFT's, thin film diodes and thin film solar cells.
  • the glass substrate which is smoothed by the method according to the present invention may be used for purposes other than the production of thin film semiconductor devices such as for the production of glass masks. It is preferred that the trialkoxysilane have an alkoxy group having 1 to 4 carbon atoms.
  • trialkoxysilane examples include trimethoxysilane, triethoxysilane, tri-n-propoxysilane, triisopropoxysilane, tri-n-butoxysilane, tri-sec-butoxysilane, triisobutoxysilane and tri-tert-butoxysilane, with triethoxysilane being particularly preferred. It is preferred that the trialkoxysilane be supplied to the reaction system after being vaporized by bubbling with an inert gas such as helium, argon or nitrogen. It is also preferred that the trialkoxysilane be supplied to the reaction system together with a dilution gas of the above-described inert gas, after being vaporized by heating.
  • an inert gas such as helium, argon or nitrogen
  • Ozone which is the other reactive gas, is preferably supplied to the reaction system after being diluted with oxygen.
  • concentration of ozone it is preferred that the concentration of ozone not exceed 10 wt%, with 3 to 7 wt% being particularly preferred.
  • ozone be supplied to the reaction system in an amount of 0.5 to 10 mols per 1 mol of trialkoxysilane, with 1 to 5 mols being particularly preferred.
  • the amount of ozone is too much, generation of microparticles becomes too strong, causing adhesion of the particles to the glass substrate.
  • the amount of ozone is not sufficient, the reaction speed becomes slow and is not practical.
  • the film of silicon oxide which is formed on a glass substrate by a chemical vapor deposition using trialkoxysilane and ozone, has an excellent fluidity at the time of forming a film. Therefore, it is possible to efficiently reduce pinholes, protrusions and the like on the surface of the glass substrate, thereby obtaining a surface having an excellent smoothness. Further, since chemical vapor deposition using trialkoxysilane and ozone is employed, the temperature for forming a film of silicon oxide can be significantly lowered compared to conventional methods. Therefore, the glass substrate does not undergo excessive thermal stress, thereby ensuring the reliability of the glass substrate.
  • the film of silicon oxide formed on the glass substrate prevents alkali metal ions contained in the glass substrate prevents alkali metal ions contained in the glass substrate from transferring to a thin film formed on the glass substrate, the reliability of thin film semiconductor devices and the like formed on the glass substrate can be enhanced.
  • the temperature of a glass substrate on which a thin film is to be formed is maintained in the range of 100 to 400°C, and more preferably 150 to 260°C during the process for manufacturing the glass substrate.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)

Abstract

A method of forming a silicon oxide film (11) on a glass substrate surface (10) by a low temperature chemical vapor deposition process using trialkoxysilane and ozone, thereby smoothing said surface.

Description

METHOD OF MANUFACTURING A GLASS SUBSTRATE FOR A THIN FILM
Brief Description of the Invention
The present invention relates to a method of processing a glass substrate on which a thin film is to be formed, and more particularly to a method of smoothing a surface of a glass substrate onto which is formed a fine thin film pattern for a semiconductor device or the like.
Background of the Invention
Thin film semiconductor devices such as thin film transistors, glass masks used in the fabrication of semiconductor devices and the like are conventionally manufactured by using glass substrates having a surface smoothed in advance by a fine lapping process or the like.
However, it is difficult to completely remove minute pinholes, projections and the like from the surface of a glass substrate, even when the surface is smoothed by a fine lapping process or the like. These defects cause inferior thin film semiconductor devices to be formed on the surface of the glass substrate, causing a problem particularly in the manufacture of thin film semiconductor devices in which an extremely fine pattern must be formed on the glass substrate.
To overcome the above-mentioned drawback, an attempt has been made to smooth a glass substrate by coating the glass substrate with a film of a low temperature silicon oxide or the like, which has a good fluidity at the time of formation of the film, by vapor deposition using tetraethoxysilane. However, since the glass substrate must be maintained at a temperature of 600°C or higher during the formation of a film of silicon oxide using tetraethoxysilane, the glass substrate undergoes thermal stress which generates defects such as cracks in the glass substrate.
A method for overcoming this drawback has been proposed. It has been proposed that a film of silicon oxide be formed on a glass substrate by chemical vapor disposition using trialkoxysilane and ozone, at temperatures in the vicinity of 500°C. This method is not practical, because cracks may be generated in the film of silicon oxide when it is formed on a glass substrate having a temperature in the vicinity of 500°C.
Moreover, since alkali metal ions are present in the glass substrate, they transfer from the glass substrate into the thin film when the thin film is formed directly on the glass substrate, hindering the normal operation of thin film semiconductor devices.
This invention is to solve the above-described problems, and therefore, an object of the present invention is to provide a method of processing a glass substrate for a thin film in which the surface of the glass substrate is coated with a stable thin film at a low temperature, thereby smoothing the surface of the glass substrate as well as stopping the transfer of the alkali metal ions in the glass substrate into thin film.
The present invention is characterized in that a film of silicon oxide is formed on a surface of a glass substrate for a thin film by chemical vapor deposition using trialkoxysilane and ozone at a low temperature, thereby smoothing the surface of the glass surface. Further, the invention is characterized in that the temperature of the glass substrate is maintained in the range of 100-400°C.
Brief Description of the Drawings
The foregoing and other objects of the invention will be more clearly understood from the following detailed description when read in conjunction with the accompanying drawings, wherein:
Figure 1 is a schematic view in cross section of an amorphous silicon thin film transistor of a reverse stagger type.
Figure 2 is a graph showing the linkage current of a film of silicon oxide formed in accordance with the invention.
Description of the Preferred Embodiments
Figure 1 is a schematic view showing a cross section of an amorphous silicon thin film transistor of a reverse stagger type (hereinafter referred to as an "amorphous silicon TFT") to which the present invention is applied. The outline of the process for manufacturing the amorphous silicon TFT will be described.
First, a film 11 of silicon oxide is formed on a glass substrate 10 made of Corning 7059 under the following conditions in order to make the upper surface of the glass substrate 10 smooth. A gas mixture obtained by introducing 2.0 liters/min. of nitrogen gas into triethoxysilane, which has been preheated to 45°C, for bubbling, and 7.5 liters/ min. of oxygen containing 4.5% of ozone are mixed with 18 liters/min. of nitrogen gas for dilution to obtain a reaction gas. The reaction gas is introduced onto the surface of the glass substrate 10 which has been heated to 260°C. Triethoxysilane and ozone in the reaction gas are allowed to react to form a film 11 of silicon oxide having a thickness of about 1 μm on the surface of the glass substrate 10. Since the film 11 of silicon oxide has sufficient fluidity, irregularities such as pinholes and protrusions are effectively reduced. Accordingly, a glass substrate having a very smooth surface can be obtained.
Although the film 11 of silicon oxide is formed at a low temperature, the film 11 has a high density, as is clearly seen from the leak current, shown in Fig. 2, which proves that the quality of the glass substrate is suitable for being formed with a thin film. Further, since the formation of the film 11 of silicon oxides is carried out at a low temperature of 260°C, cracks are hardly generated in the glass substrate when the glass substrate is subjected to thermal stress during the formation of a thin film.
Next, a film of aluminum having a thickness of 1500 A is formed as a gate electrode 12 on the film 11 of silicon oxide by a vacuum evaporation. Then, a film of silicon oxide having a thickness of about 2000 A is formed as a gate oxide layer 13 on the gate electrode 12 under the same conditions as those in the above-described process.
Subsequently, a film 14 of amorphous silicon having a thickness of 2000 A is formed on the surface of the gate oxide layer 13 by plasma CVD only in an area above the gate electrode 12. A film of silicon oxide is formed on the film 14 of amorphous silicon as a channel protective layer 15, only in an area above the gate electrode 12, under conditions similar to those in the formation of the gate oxide layer 13. Since the temperature during the formation process is relatively low, namely 260°C, the glass substrate is prevented from being damaged, as described above. Further, dehydrogenation of the amorphous silicon film can be prevented. Moreover, a source electrode 16 made of a chromium film and a drain electrode 17 made of an aluminum film, each having a thickness of about 1500 A are formed on the film 14 of amorphous silicon on both sides of the film 15 of silicon oxide, whereby an amorphous silicon TFT is formed on the glass substrate 10.
As described above, since the amorphous silicon TFT is formed on the glass substrate which is coated with a film of silicon oxide having a high density, an amorphous silicon TFT having excellent characteristics can be produced with a high yield without being affected by the irregularity of the glass substrate. Further, since the film of silicon oxide coated on the glass substrate from transferring into the TFT, the electric characteristics of the amorphous silicon TFT can be stably maintained.
In the above-described embodiment, a silicon oxide film is formed on the surface of a glass substrate which is heated at 260°C. The glass substrate may be heated at a different temperature' in the range of 100 to 400°C, preferably 150 to 260°C.
Further, in the above-described embodiment, a glass substrate which is smoothed by the method according to the present invention is used for the production of an amorphous silicon TFT of a reverse stagger type. The same effects can be obtained in cases where the smoothed glass substrate is used for the production of' other thin film devices such as amorphous silicon TFT's of the other types, polycrystalline silicon TFT's, thin film diodes and thin film solar cells. In addition, the glass substrate which is smoothed by the method according to the present invention may be used for purposes other than the production of thin film semiconductor devices such as for the production of glass masks. It is preferred that the trialkoxysilane have an alkoxy group having 1 to 4 carbon atoms. Specific examples of such trialkoxysilane include trimethoxysilane, triethoxysilane, tri-n-propoxysilane, triisopropoxysilane, tri-n-butoxysilane, tri-sec-butoxysilane, triisobutoxysilane and tri-tert-butoxysilane, with triethoxysilane being particularly preferred. It is preferred that the trialkoxysilane be supplied to the reaction system after being vaporized by bubbling with an inert gas such as helium, argon or nitrogen. It is also preferred that the trialkoxysilane be supplied to the reaction system together with a dilution gas of the above-described inert gas, after being vaporized by heating.
Ozone, which is the other reactive gas, is preferably supplied to the reaction system after being diluted with oxygen. In this case, it is preferred that the concentration of ozone not exceed 10 wt%, with 3 to 7 wt% being particularly preferred.
It is preferred that ozone be supplied to the reaction system in an amount of 0.5 to 10 mols per 1 mol of trialkoxysilane, with 1 to 5 mols being particularly preferred. When the amount of ozone is too much, generation of microparticles becomes too strong, causing adhesion of the particles to the glass substrate. On the other hand, when the amount of ozone is not sufficient, the reaction speed becomes slow and is not practical.
In the invention the film of silicon oxide, which is formed on a glass substrate by a chemical vapor deposition using trialkoxysilane and ozone, has an excellent fluidity at the time of forming a film. Therefore, it is possible to efficiently reduce pinholes, protrusions and the like on the surface of the glass substrate, thereby obtaining a surface having an excellent smoothness. Further, since chemical vapor deposition using trialkoxysilane and ozone is employed, the temperature for forming a film of silicon oxide can be significantly lowered compared to conventional methods. Therefore, the glass substrate does not undergo excessive thermal stress, thereby ensuring the reliability of the glass substrate.
Further, since the film of silicon oxide formed on the glass substrate prevents alkali metal ions contained in the glass substrate prevents alkali metal ions contained in the glass substrate from transferring to a thin film formed on the glass substrate, the reliability of thin film semiconductor devices and the like formed on the glass substrate can be enhanced.
The temperature of a glass substrate on which a thin film is to be formed is maintained in the range of 100 to 400°C, and more preferably 150 to 260°C during the process for manufacturing the glass substrate.

Claims

WHAT IS CLAIMED :
1. A method of processing a glass substrate for a thin film device, characterized by chemical vapor deposition using trialkoxysilane and ozone, thereby smoothing the surface of said glass substrate.
2. The method of manufacturing a glass substrate for a thin film according to Claim 1, wherein the temperature of said glass substrate is maintained in the range of 100-400°C.
PCT/US1994/001278 1993-02-04 1994-02-04 Method of manufacturing a glass substrate for a thin film WO1994018356A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5/40477 1993-02-04
JP5040477A JPH06244426A (en) 1993-02-04 1993-02-04 Production of glass board for thin film formation

Publications (1)

Publication Number Publication Date
WO1994018356A1 true WO1994018356A1 (en) 1994-08-18

Family

ID=12581704

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1994/001278 WO1994018356A1 (en) 1993-02-04 1994-02-04 Method of manufacturing a glass substrate for a thin film

Country Status (2)

Country Link
JP (1) JPH06244426A (en)
WO (1) WO1994018356A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1001409C2 (en) * 1995-09-28 1997-04-15 Mosel Vitelic Inc Method for forming insulating layers between polysilicon layers.
WO1997022992A1 (en) * 1995-12-15 1997-06-26 Watkins-Johnson Company Method of forming dielectric films with reduced metal contamination
WO1999023042A1 (en) * 1997-11-04 1999-05-14 Pilkington Plc Improvements in coating glass
CN112703580A (en) * 2018-09-11 2021-04-23 株式会社Eugene科技 Thin film forming method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661381A (en) * 1985-10-07 1987-04-28 Libbey-Owens-Ford Co. Continuous vapor deposition method for producing a coated glass article
US4845054A (en) * 1985-06-14 1989-07-04 Focus Semiconductor Systems, Inc. Low temperature chemical vapor deposition of silicon dioxide films
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles
US4981724A (en) * 1988-10-27 1991-01-01 Hochberg Arthur K Deposition of silicon oxide films using alkylsilane liquid sources
US4992306A (en) * 1990-02-01 1991-02-12 Air Products Abd Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride films using azidosilane sources

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845054A (en) * 1985-06-14 1989-07-04 Focus Semiconductor Systems, Inc. Low temperature chemical vapor deposition of silicon dioxide films
US4661381A (en) * 1985-10-07 1987-04-28 Libbey-Owens-Ford Co. Continuous vapor deposition method for producing a coated glass article
US4981724A (en) * 1988-10-27 1991-01-01 Hochberg Arthur K Deposition of silicon oxide films using alkylsilane liquid sources
US4992306A (en) * 1990-02-01 1991-02-12 Air Products Abd Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride films using azidosilane sources
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1001409C2 (en) * 1995-09-28 1997-04-15 Mosel Vitelic Inc Method for forming insulating layers between polysilicon layers.
WO1997022992A1 (en) * 1995-12-15 1997-06-26 Watkins-Johnson Company Method of forming dielectric films with reduced metal contamination
WO1999023042A1 (en) * 1997-11-04 1999-05-14 Pilkington Plc Improvements in coating glass
US6248397B1 (en) * 1997-11-04 2001-06-19 Pilkington Plc Method of depositing a silicon oxide coating on glass and the coated glass
CN112703580A (en) * 2018-09-11 2021-04-23 株式会社Eugene科技 Thin film forming method

Also Published As

Publication number Publication date
JPH06244426A (en) 1994-09-02

Similar Documents

Publication Publication Date Title
US4282270A (en) Method for forming an insulating film layer of silicon oxynitride on a semiconductor substrate surface
US7723781B2 (en) Vertical thin-film transistor with enhanced gate oxide
EP0351505B1 (en) Method for passivating a compound semiconductor surface
JPH057872B2 (en)
KR19980018344A (en) Thin film deposition method on single crystal semiconductor substrate
US3447958A (en) Surface treatment for semiconductor devices
WO1994018356A1 (en) Method of manufacturing a glass substrate for a thin film
EP0254589B1 (en) Process for preparation of semiconductor device
JP3213437B2 (en) Semiconductor device
JPS61174621A (en) Manufacture of semiconductor thin crystal
Kroll et al. Formation of silica films on silicon using silane and carbon dioxide
JPH0799191A (en) Insulating layer in semiconductor device and its formation
JP3003425B2 (en) Method for manufacturing silicon oxide film
JPH07122552A (en) Deposition of insulation film in semiconductor device
EP0023925B1 (en) Method of producing insulating film for semiconductor surfaces and semiconductor device with such film
JP3618246B2 (en) Manufacturing method of semiconductor device
KR100212014B1 (en) Method of forming bpsg films of semiconductor device
KR100451507B1 (en) Method for manufacturing semiconductor device
JPH03266434A (en) Manufacture of semiconductor device
JPH06232403A (en) Thin film semiconductor device
KR19980035476A (en) Wiring Formation Method of Semiconductor Device
KR100445058B1 (en) Method for forming gate oxide in semiconductor device
KR100237748B1 (en) Method for manufacturing interlayer insulator of semiconductor device
US20050048799A1 (en) Film forming material, film forming method, and film
JPS6362276A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): KR

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
122 Ep: pct application non-entry in european phase