WO1993011608A1 - Sectionneur de puissance - Google Patents

Sectionneur de puissance Download PDF

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Publication number
WO1993011608A1
WO1993011608A1 PCT/EP1992/002678 EP9202678W WO9311608A1 WO 1993011608 A1 WO1993011608 A1 WO 1993011608A1 EP 9202678 W EP9202678 W EP 9202678W WO 9311608 A1 WO9311608 A1 WO 9311608A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit breaker
voltage
semiconductor element
control voltage
control device
Prior art date
Application number
PCT/EP1992/002678
Other languages
German (de)
English (en)
Inventor
Hermann Zierhut
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Priority to DE9218519U priority Critical patent/DE9218519U1/de
Publication of WO1993011608A1 publication Critical patent/WO1993011608A1/fr

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/02Details
    • H02H3/025Disconnection after limiting, e.g. when limiting is not sufficient or for facilitating disconnection
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration

Definitions

  • the invention relates to a circuit breaker, in particular a line circuit breaker, which works with a semiconductor element.
  • Circuit breakers in the form of line circuit breakers let a short-circuit current of 1000 to about 6000 A flow for a few milliseconds when a downstream device is short-circuited. Therefore, these devices are designed today so that they can withstand these high-current pulses, as they occur especially when commissioning, without damage. This makes circuit breakers more expensive, on the one hand, and on the other hand, the required construction volume is larger.
  • the invention has for its object to develop a circuit breaker, in particular in the form of a circuit breaker, which manages with simple means and a semiconductor element without oversizing.
  • the solution to the problem is carried out by a circuit breaker according to claim 1.
  • the semiconductor element is selected such that its internal resistance has a low value at a certain control voltage on a control electrode and an operating voltage on working electrodes lying in the direction of passage in a cable run. Its internal resistance rises abruptly with increasing voltage at the working electrodes. Voltage is then abruptly applied to a trigger element of a relay arranged parallel to the semiconductor element, so that the relay can then open an interrupter contact arranged in the cable line.
  • the interrupter contact can open permanently, that is to say can be designed to be storage.
  • it can be a bistable relay.
  • Such an arrangement acts as a current-limiting semiconductor arrangement, the semiconductor being temporarily protected to a certain extent automatically by the trigger element arranged parallel to it and being permanently protected by the opening of the interrupter contact arranged in series with it and the downstream consumer.
  • a known circuit breaker (US-A-3 058 034, Figure 10) works with a special circuit with transistors as semiconductor elements in series connection to one
  • the antiserial arrangement of two FETs whose gates can be connected to a common control voltage is suitable as the semiconductor element. Despite the inevitable effect of an internal body diode in FETs, the arrangement of the two FETs can block AC voltage. In the event of a short circuit, such an arrangement can limit the current to less than 50 to 60 A instead of the 6 KA otherwise customary in circuit breakers. Particularly fast special versions are not required as relays, but standard quick-release relays are sufficient.
  • the circuit breaker can be remotely controlled using simple means. All that is required for this is to make the control voltage adjustable by a remote control device in the sense of a case-by-case increase or decrease in the internal resistance of the semiconductor element.
  • a remotely controllable switch has all the advantages of the principle according to the invention.
  • a current sensor is arranged in the cable by which it can be checked when a permissible short-circuit current is reached or exceeded, whereupon the control voltage is set so that the permissible short-circuit current is not exceeded.
  • additional monitoring by means of a control device acted upon by the current sensor is therefore used.
  • a mains voltage of 230 V it is advantageous for a mains voltage of 230 V to carry out the break contact with an opening width of at least 3 mm. With two in series for parallel connection from a semiconductor arrangement With a mains voltage of 230 V, an opening width of 1.5 mm is sufficient in each case. Such a symmetrical arrangement of the interrupter contacts is advantageous.
  • FIG. 1 shows the circuit breaker in principle and using two antiserial FETs.
  • FIG. 2 shows a circuit breaker with two interrupter contacts and with additional protection by two Zener diodes, each between the drain and gate of an FET.
  • 3 shows a circuit breaker with a control device for the electrode voltage of two FETs.
  • 4 shows the circuit breaker in the cable path of a network to a consumer.
  • the circuit breaker according to FIG. 1 works with a semiconductor element 1, the internal resistance of which at a certain control voltage 2 on a control electrode 3 and an operating voltage 4 on working electrodes 5 lying in the direction of passage in a cable train has a low value.
  • the working voltage at the semiconductor element 1 can only be a few 100 mV.
  • the semiconductor element is selected or constructed in such a way that its internal resistance increases suddenly with increasing voltage at the working electrodes 5.
  • a trigger element 7 of an element acting as a relay is arranged electrically parallel to the semiconductor element 1. This can the field winding of a relay.
  • the relay operates on at least one interrupter contact 8, which is arranged in the cable train. When the relay responds, the line is interrupted.
  • the breaker contact 8 is arranged above in the exemplary embodiment, based on FIG. 1.
  • the interrupter contact can also be inserted into the line routing below, which is to be illustrated by the dashed line.
  • the semiconductor element 1 is formed by two FETs 6 connected in series, the gates 9 of which are connected to a common control voltage 2.
  • FETs 6 With equally doped FETs, e.g. two n-channel FETs, it is favorable to connect the source electrodes 10 and to apply them to one pole of the control voltage. If the drain electrodes 11 were to be connected, a separate control voltage would be required for each FET.
  • two interrupter contacts 8 are provided and the FETs 6 of the semiconductor element
  • Zener diodes 12 are additionally protected by Zener diodes 12.
  • the Zener diodes 12 are arranged between the drain 11 and gate 9 of each FET. They are antiserial to one another and protect the FETs in circuits with greater inductance against overvoltage peaks, such as can occur during a switch-off process.
  • a diode 17 In series with the Zener diodes 12 is a diode 17 in such a way that the cathodes of the diode and the Zener diode 12 are connected to one another. This ensures that when the source-drain path of the FETs 9 is switched through, that is to say the control voltage
  • the control voltage 2 can be from a control device 13, cf. for example FIG 3, which in particular as Remote control device can be designed to be adjustable in the sense of a case-by-case increase or decrease in the internal resistance of the semiconductor element 1.
  • the control device is advantageously to be designed in such a way that it is checked when a permissible short-circuit current is reached or exceeded, in order to then suddenly adjust the control voltage so that the permissible short-circuit current is not exceeded.
  • Standard FETs react in the nanosecond range, for example to change the voltage from 15 to 2 V.
  • a current sensor 14 is arranged in the cable run and the control device 13 is designed to check when a permissible short-circuit current is reached or exceeded in order to set the control voltage 2 so that the permissible short-circuit current is not exceeded - becomes.
  • FIG. 4 shows the circuit breaker in the form of a double breaker, that is to say with two breaker contacts 8, arranged in a supply network 15 to a consumer 16.
  • the circuit breaker acts as a current-limiting semiconductor circuit. If the circuit breaker is designed to be controllable in the manner described or in another way, advantageous additional functions can be fulfilled for special tasks:

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  • Electronic Switches (AREA)

Abstract

Un sectionneur de puissance, notamment un disjoncteur de protection de canalisation, utilise un élément semiconducteur (1). Sa résistance interne est faible lorsqu'une tension déterminée de commande (2) est appliquée à une électrode de commande (3) et qu'une tension de fonctionnement (4) est appliquée à des électrodes de travail (5) situées dans le sens de passage du tracé de la ligne. La résistance interne monte brusquement à mesure que la tension appliquée aux électrodes de travail (5) augmente. Un organe de déclenchement (7) d'un élément qui exerce une fonction de relais est connecté en parallèle à l'élément semiconducteur (1). L'élément relais coopère avec au moins un contact disjoncteur (8) situé dans le tracé de ligne dans le sens de l'ouverture.
PCT/EP1992/002678 1991-12-02 1992-11-20 Sectionneur de puissance WO1993011608A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE9218519U DE9218519U1 (de) 1991-12-02 1992-11-20 Leistungsschalter

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP91120690.2 1991-12-02
EP91120690 1991-12-02

Publications (1)

Publication Number Publication Date
WO1993011608A1 true WO1993011608A1 (fr) 1993-06-10

Family

ID=8207399

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1992/002678 WO1993011608A1 (fr) 1991-12-02 1992-11-20 Sectionneur de puissance

Country Status (3)

Country Link
AU (1) AU2944292A (fr)
DE (1) DE9218519U1 (fr)
WO (1) WO1993011608A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995007570A1 (fr) * 1993-09-08 1995-03-16 Siemens Aktiengesellschaft Limiteur de courant
WO1995007571A1 (fr) * 1993-09-08 1995-03-16 Siemens Aktiengesellschaft Regulateur de courant alternatif
US6049447A (en) * 1993-09-08 2000-04-11 Siemens Ag Current limiting device
DE10101744C1 (de) * 2001-01-16 2002-08-08 Siemens Ag Elektronische Schalteinrichtung und Betriebsverfahren
EP1293023A1 (fr) * 2000-06-15 2003-03-19 Moeller GmbH Installation de commutation electrique comportant plusieurs commutateurs
FR2854287A1 (fr) * 2003-04-25 2004-10-29 Legrand Sa Interrupteur electrique a semi-conducteurs, et application
US7061739B2 (en) * 2000-06-15 2006-06-13 Siemens Aktiengesellschaft Overcurrent protection circuit
WO2009124818A1 (fr) * 2008-04-09 2009-10-15 Schneider Electric Industries Sas Systeme a relais statique comprenant deux transistors de type jfet en serie
DE102009017543A1 (de) * 2009-04-17 2010-10-21 Dspace Digital Signal Processing And Control Engineering Gmbh Schalter
FR2951015A1 (fr) * 2009-10-05 2011-04-08 Schneider Electric Ind Sas Disjoncteur a limiteur de courant
WO2020030379A1 (fr) * 2018-08-08 2020-02-13 Siemens Aktiengesellschaft Appareil de commutation et procédé

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6215632B1 (en) 1996-03-14 2001-04-10 Siemens Aktiengesellschaft Switching device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3058034A (en) * 1957-07-09 1962-10-09 Westinghouse Electric Corp Circuit interrupter system utilizing static devices
DE3445340A1 (de) * 1984-12-12 1986-06-19 Staiber, Heinrich, 8201 Bad Feilnbach Mosfet - zweirichtungsschalter mit strombegrenzung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3058034A (en) * 1957-07-09 1962-10-09 Westinghouse Electric Corp Circuit interrupter system utilizing static devices
DE3445340A1 (de) * 1984-12-12 1986-06-19 Staiber, Heinrich, 8201 Bad Feilnbach Mosfet - zweirichtungsschalter mit strombegrenzung

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995007570A1 (fr) * 1993-09-08 1995-03-16 Siemens Aktiengesellschaft Limiteur de courant
WO1995007571A1 (fr) * 1993-09-08 1995-03-16 Siemens Aktiengesellschaft Regulateur de courant alternatif
AU685756B2 (en) * 1993-09-08 1998-01-29 Siemens Aktiengesellschaft A.C. controller
AU688738B2 (en) * 1993-09-08 1998-03-19 Siemens Aktiengesellschaft Current limiting device
US5808327A (en) * 1993-09-08 1998-09-15 Siemens Aktiengesellschaft AC controller
US5999387A (en) * 1993-09-08 1999-12-07 Siemens Aktiengesellschaft Current limiting device
US6049447A (en) * 1993-09-08 2000-04-11 Siemens Ag Current limiting device
EP1293023A1 (fr) * 2000-06-15 2003-03-19 Moeller GmbH Installation de commutation electrique comportant plusieurs commutateurs
US7061739B2 (en) * 2000-06-15 2006-06-13 Siemens Aktiengesellschaft Overcurrent protection circuit
DE10101744C1 (de) * 2001-01-16 2002-08-08 Siemens Ag Elektronische Schalteinrichtung und Betriebsverfahren
WO2004098057A2 (fr) * 2003-04-25 2004-11-11 Legrand Interrupteur electrique a semi-conducteurs, et application
WO2004098057A3 (fr) * 2003-04-25 2005-02-17 Legrand Sa Interrupteur electrique a semi-conducteurs, et application
FR2854287A1 (fr) * 2003-04-25 2004-10-29 Legrand Sa Interrupteur electrique a semi-conducteurs, et application
WO2009124818A1 (fr) * 2008-04-09 2009-10-15 Schneider Electric Industries Sas Systeme a relais statique comprenant deux transistors de type jfet en serie
FR2930091A1 (fr) * 2008-04-09 2009-10-16 Schneider Electric Ind Sas Systeme a relais statique comprenant deux transistors de type jfet en serie
US8422182B2 (en) 2008-04-09 2013-04-16 Schneider Electric Industries Sas Relay system comprising two JFET transistors in series
DE102009017543A1 (de) * 2009-04-17 2010-10-21 Dspace Digital Signal Processing And Control Engineering Gmbh Schalter
FR2951015A1 (fr) * 2009-10-05 2011-04-08 Schneider Electric Ind Sas Disjoncteur a limiteur de courant
WO2020030379A1 (fr) * 2018-08-08 2020-02-13 Siemens Aktiengesellschaft Appareil de commutation et procédé
CN112543986A (zh) * 2018-08-08 2021-03-23 西门子股份公司 开关设备和方法
US11538642B2 (en) 2018-08-08 2022-12-27 Siemens Aktiengesellschaft Switching device and method

Also Published As

Publication number Publication date
DE9218519U1 (de) 1994-07-14
AU2944292A (en) 1993-06-28

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