WO1992012610A1 - Dispositif de traitement de materiau a l'arc de plasma - Google Patents
Dispositif de traitement de materiau a l'arc de plasma Download PDFInfo
- Publication number
- WO1992012610A1 WO1992012610A1 PCT/SU1990/000287 SU9000287W WO9212610A1 WO 1992012610 A1 WO1992012610 A1 WO 1992012610A1 SU 9000287 W SU9000287 W SU 9000287W WO 9212610 A1 WO9212610 A1 WO 9212610A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- οsi
- ρazοmκnuτοgο
- κazhdοgο
- πlοsκοsτi
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/44—Plasma torches using an arc using more than one torch
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/48—Generating plasma using an arc
- H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
Definitions
- the hardware is available for the electric device ⁇ : 5 for processing, and more than that, the device is free to pay for the process.
- s ⁇ len ⁇ idami provided between ⁇ e ⁇ - ⁇ magni ⁇ nym ⁇ v ⁇ d ⁇ m, ⁇ nets ⁇ g ⁇ ⁇ as ⁇ l ⁇ zhen between 0 and ⁇ sy ⁇ shi ⁇ v ⁇ da s ⁇ ve ⁇ s ⁇ vuyuschim ele ⁇ dnym uzl ⁇ m and tse ⁇ ⁇ ntsa ⁇ v ⁇ da ⁇ as ⁇ l ⁇ zhen in ⁇ l ⁇ s ⁇ s ⁇ i simme ⁇ ii ⁇ l ⁇ s ⁇ v da ⁇ n ⁇ g ⁇ ⁇ az ⁇ m ⁇ nu ⁇ g ⁇ magni ⁇ v ⁇ da.
- Ele ⁇ d ⁇ ye nodes 4 ⁇ d ⁇ lyucheny is ⁇ chni ⁇ u b ⁇ ⁇ ⁇ s ⁇ yann ⁇ g ⁇ ⁇ a za ⁇ e ⁇ - ⁇ Lena ⁇ sn ⁇ vanin ⁇ a 3 ⁇ m ⁇ schyu ⁇ nsh ⁇ ey ⁇ v 7.
- Ele ⁇ d- nye nodes 4 us ⁇ an ⁇ vle ⁇ n simme ⁇ ichn ⁇ ⁇ n ⁇ si ⁇ eln ⁇ ⁇ l ⁇ s ⁇ - s ⁇ p in ⁇ y ⁇ as ⁇ l ⁇ zhena ⁇ s 2 shi ⁇ ts ⁇ v ⁇ da I. ⁇ a ⁇ azhd ⁇ m ⁇ nsh ⁇ eyne 7 / Shre ⁇ le ⁇
- the selenoid 9 the connected to the source 10 10 of the current. Every 3 electrical nodes 3 have a simplicity of space, and are fun!
- plan II Part of the unit 7, located between the village of 9, is plan II, made from an external magnetic material.
- Blocktein 7 and plate II are the ZC output of the disconnected magnet.
- End Plan II that is, the end of the exit is located between the I and the common electrical device.
- the device is used for electrical components - these devices are located on the unit with 2 busbars I with a step of 360 units / ⁇ ..
- Each elec- tric unit no. 4 is made in the form of a cigar-10 camcorder 12 (Fig. 3) with a 13th potentiometer;
- each electrical node 4 generates a plasma with a speed of 20, conventionally 30-30 shown in Fig. 3.5. Plasma streams 20 ⁇ and descend to a zone of 21 mixing and plasma:: 22.
- ⁇ Celenoids 2 source 10 of the output of electric power is also: current and health: non-plasma: the magnetic field is not disturbed; ⁇ > -
- the matteiad 19 is kept at a natural center. - 7 -
- the other part of the plasma channel is accelerated by a moving plasma and intensively and equally warming up along the course of the plasma channel.
- ⁇ deivist ⁇ is the power of a gas-driven gas quasi-bending of bending gas flow (plasma).
- Zsli would be of g s ⁇ 1s ⁇ ve byl ⁇ ⁇ l ⁇ ⁇ dn ⁇ ⁇ le ⁇ , ⁇ ⁇ : sluchashyum ⁇ l ⁇ neni ⁇ s ⁇ ui 20 s ⁇ nu v ⁇ z ⁇ as ⁇ aniya indg ⁇ tsii 3 (v ⁇ iz ⁇ ⁇ si ⁇ ⁇ ig.4 on), the power ele ⁇ magsh ⁇ -
- the claimed device is more efficient and has a higher output, which indicates that the plasma burner is inactive: - ⁇ - ⁇ ⁇ ⁇ ⁇ eue ⁇ ⁇ e ⁇ n ⁇ l ⁇ gii ⁇ b ⁇ ab ⁇ p Te: T she ⁇ a ⁇ u ⁇ z ⁇ laz- ⁇ .i ⁇ ⁇ tsen ⁇ e summa ⁇ n ⁇ g ⁇ ⁇ a ⁇ lucha ⁇ ⁇ , changing znache ⁇ iya ele ⁇ iches ⁇ i ⁇ ⁇ v in duga ⁇ , ⁇ as ⁇ dy gaz ⁇ g che ⁇ ez ele ⁇ -.
- ⁇ 5 ⁇ ⁇ ⁇ 2 (0,5- ⁇ 0) ⁇ 0- 3 ⁇ .
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Arc Welding Control (AREA)
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
Abstract
Un dispositif de traitement d'un matériau à l'arc de plasma comprend un conduit de charge (1) autour duquel sont montés des générateurs de jets de plasma à arc électrique, ainsi qu'un système magnétique constitué par des circuits magnétiques ouverts, chaque générateur de jets de plasma à arc électrique étant constitué par deux électrodes (4). Des électro-aimants (9) sont montés sur les pôles (8) du circuit magnétique ouvert. La section du circuit magnétique ouvert entre les électro-aimants (9) est dotée d'une prise ferromagnétique. Le dispositif de l'invention peut être utilisé dans différents domaines industriels dans le traitement thermique ou chimique de matériaux au plasma.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9316309A GB2271044B (en) | 1990-12-26 | 1990-12-26 | Apparatus for plasma-arc machining |
PCT/SU1990/000287 WO1992012610A1 (fr) | 1990-12-26 | 1990-12-26 | Dispositif de traitement de materiau a l'arc de plasma |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/SU1990/000287 WO1992012610A1 (fr) | 1990-12-26 | 1990-12-26 | Dispositif de traitement de materiau a l'arc de plasma |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1992012610A1 true WO1992012610A1 (fr) | 1992-07-23 |
Family
ID=21617724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/SU1990/000287 WO1992012610A1 (fr) | 1990-12-26 | 1990-12-26 | Dispositif de traitement de materiau a l'arc de plasma |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB2271044B (fr) |
WO (1) | WO1992012610A1 (fr) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996023394A1 (fr) * | 1995-01-26 | 1996-08-01 | ZAKRYTOE AKTSIONERNOE OBSCHESTVO PROIZVODSTVENNAYA FIRMA 'Az' | Appareil generateur de flux plasmique |
US5767627A (en) * | 1997-01-09 | 1998-06-16 | Trusi Technologies, Llc | Plasma generation and plasma processing of materials |
US6040548A (en) * | 1996-05-31 | 2000-03-21 | Ipec Precision, Inc. | Apparatus for generating and deflecting a plasma jet |
US6139678A (en) * | 1997-11-20 | 2000-10-31 | Trusi Technologies, Llc | Plasma processing methods and apparatus |
US6168697B1 (en) | 1998-03-10 | 2001-01-02 | Trusi Technologies Llc | Holders suitable to hold articles during processing and article processing methods |
US6238587B1 (en) | 1996-05-31 | 2001-05-29 | Ipec Precison, Inc. | Method for treating articles with a plasma jet |
US6261375B1 (en) | 1999-05-19 | 2001-07-17 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
US6423923B1 (en) | 2000-08-04 | 2002-07-23 | Tru-Si Technologies, Inc. | Monitoring and controlling separate plasma jets to achieve desired properties in a combined stream |
US6660643B1 (en) | 1999-03-03 | 2003-12-09 | Rwe Schott Solar, Inc. | Etching of semiconductor wafer edges |
US6749764B1 (en) | 2000-11-14 | 2004-06-15 | Tru-Si Technologies, Inc. | Plasma processing comprising three rotational motions of an article being processed |
US7491344B2 (en) * | 2002-11-07 | 2009-02-17 | Samsung Electronics Co., Ltd. | Method for etching an object using a plasma and an object etched by a plasma |
JP2010511285A (ja) * | 2006-11-28 | 2010-04-08 | ウラジミール・イー・ベラシュチェンコ | プラズマ装置およびシステム |
EP2270845A2 (fr) | 1996-10-29 | 2011-01-05 | Tru-Si Technologies Inc. | Circuits intégrés et leurs procédés de fabrication |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI954843A (fi) * | 1995-10-11 | 1997-04-12 | Valtion Teknillinen | Menetelmä ja laite plasman muodostamiseksi |
WO1997018694A1 (fr) * | 1995-11-13 | 1997-05-22 | Ist Instant Surface Technology S.A. | Reacteur a jet de plasma |
US6278241B1 (en) * | 1995-11-13 | 2001-08-21 | Tepla Ag | Four-nozzle plasma generator for forming an activated jet |
WO1997019895A1 (fr) * | 1995-11-27 | 1997-06-05 | Volgogradskoe Otkrytoe Aktsionernoe Obschestvo 'khimprom' | Procede de production de dioxyde de titane et reacteur chimico-plasmique pour la mise en oeuvre de ce procede |
GB2324196B (en) * | 1997-04-09 | 2001-10-24 | Aea Technology Plc | Plasma processing |
WO1998053201A1 (fr) * | 1997-05-23 | 1998-11-26 | Societe Nationale D'etude Et De Construction De Moteurs D'aviation 'snecma' | Dispositif de concentration de faisceau d'ions pour propulseur a plasma et propulseur a plasma equipe d'un tel dispositif |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2622029A1 (de) * | 1975-05-20 | 1976-12-02 | Soudure Autogene Elect | Vorrichtung zur erzeugung eines hochtemperatur-plasmas |
GB1525393A (en) * | 1974-10-02 | 1978-09-20 | Daido Steel Co Ltd | Heat treating apparatus and method |
EP0075953A1 (fr) * | 1981-09-30 | 1983-04-06 | Kabushiki Kaisha Toshiba | Appareils à plasme |
DE3805732A1 (de) * | 1988-02-24 | 1989-09-07 | Linde Ag | Plasmabrenner |
-
1990
- 1990-12-26 WO PCT/SU1990/000287 patent/WO1992012610A1/fr unknown
- 1990-12-26 GB GB9316309A patent/GB2271044B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1525393A (en) * | 1974-10-02 | 1978-09-20 | Daido Steel Co Ltd | Heat treating apparatus and method |
DE2622029A1 (de) * | 1975-05-20 | 1976-12-02 | Soudure Autogene Elect | Vorrichtung zur erzeugung eines hochtemperatur-plasmas |
EP0075953A1 (fr) * | 1981-09-30 | 1983-04-06 | Kabushiki Kaisha Toshiba | Appareils à plasme |
DE3805732A1 (de) * | 1988-02-24 | 1989-09-07 | Linde Ag | Plasmabrenner |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996023394A1 (fr) * | 1995-01-26 | 1996-08-01 | ZAKRYTOE AKTSIONERNOE OBSCHESTVO PROIZVODSTVENNAYA FIRMA 'Az' | Appareil generateur de flux plasmique |
US6040548A (en) * | 1996-05-31 | 2000-03-21 | Ipec Precision, Inc. | Apparatus for generating and deflecting a plasma jet |
US6238587B1 (en) | 1996-05-31 | 2001-05-29 | Ipec Precison, Inc. | Method for treating articles with a plasma jet |
EP2270846A2 (fr) | 1996-10-29 | 2011-01-05 | Tru-Si Technologies Inc. | Circuits intégrés et leurs procédés de fabrication |
EP2270845A2 (fr) | 1996-10-29 | 2011-01-05 | Tru-Si Technologies Inc. | Circuits intégrés et leurs procédés de fabrication |
US5767627A (en) * | 1997-01-09 | 1998-06-16 | Trusi Technologies, Llc | Plasma generation and plasma processing of materials |
WO1998031038A1 (fr) | 1997-01-09 | 1998-07-16 | Trusi Technologies, Llc | Production de plasma et traitement de materiaux au plasma |
US6627039B1 (en) | 1997-11-20 | 2003-09-30 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
US6139678A (en) * | 1997-11-20 | 2000-10-31 | Trusi Technologies, Llc | Plasma processing methods and apparatus |
US6323134B1 (en) | 1997-11-20 | 2001-11-27 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
US7179397B2 (en) | 1997-11-20 | 2007-02-20 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
US6168697B1 (en) | 1998-03-10 | 2001-01-02 | Trusi Technologies Llc | Holders suitable to hold articles during processing and article processing methods |
US6660643B1 (en) | 1999-03-03 | 2003-12-09 | Rwe Schott Solar, Inc. | Etching of semiconductor wafer edges |
US6287976B1 (en) | 1999-05-19 | 2001-09-11 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
US6261375B1 (en) | 1999-05-19 | 2001-07-17 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
US6541729B2 (en) | 2000-08-04 | 2003-04-01 | Tru-Si Technologies, Inc. | Monitoring and controlling separate plasma jets to achieve desired properties in a combined stream |
US6423923B1 (en) | 2000-08-04 | 2002-07-23 | Tru-Si Technologies, Inc. | Monitoring and controlling separate plasma jets to achieve desired properties in a combined stream |
US6749764B1 (en) | 2000-11-14 | 2004-06-15 | Tru-Si Technologies, Inc. | Plasma processing comprising three rotational motions of an article being processed |
US7491344B2 (en) * | 2002-11-07 | 2009-02-17 | Samsung Electronics Co., Ltd. | Method for etching an object using a plasma and an object etched by a plasma |
JP2010511285A (ja) * | 2006-11-28 | 2010-04-08 | ウラジミール・イー・ベラシュチェンコ | プラズマ装置およびシステム |
KR101495199B1 (ko) | 2006-11-28 | 2015-02-24 | 블라디미르 이. 벨라쉬첸코 | 플라즈마 장치 및 시스템 |
Also Published As
Publication number | Publication date |
---|---|
GB2271044A (en) | 1994-03-30 |
GB9316309D0 (en) | 1993-09-22 |
GB2271044B (en) | 1995-06-21 |
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