WO1992010437A1 - Procede pour deposer une couche sur du verre et d'autres substrats - Google Patents

Procede pour deposer une couche sur du verre et d'autres substrats Download PDF

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Publication number
WO1992010437A1
WO1992010437A1 PCT/GB1991/002203 GB9102203W WO9210437A1 WO 1992010437 A1 WO1992010437 A1 WO 1992010437A1 GB 9102203 W GB9102203 W GB 9102203W WO 9210437 A1 WO9210437 A1 WO 9210437A1
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WO
WIPO (PCT)
Prior art keywords
substrate
matrix
process according
coating
electron density
Prior art date
Application number
PCT/GB1991/002203
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English (en)
Inventor
Ijaz Ahmad Rauf
Original Assignee
Ijp Technologies Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ijp Technologies Limited filed Critical Ijp Technologies Limited
Publication of WO1992010437A1 publication Critical patent/WO1992010437A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2453—Coating containing SnO2
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/4529—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application applied from the gas phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/23—Mixtures
    • C03C2217/231—In2O3/SnO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/151—Deposition methods from the vapour phase by vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications

Definitions

  • the invention relates to a method of coating a substrate, such as glass, with a thin film of material such as an electronic material.
  • the invention also encompasses coated glass and other substrates.
  • the invention finds particular, although not exclusive, application in the manufacture of glass which is coated to render it transmissive to visible light whilst being reflective of infra-red and other radiation.
  • Such glass is useful in providing thermally efficient glazing for buildings.
  • such glass is manufactured by coating plain glass with a thin film of an electronic composite material, such as a mixture of In2 ⁇ 3 and SnO2 (known as indium/tin oxide, ITO).
  • ITO indium/tin oxide
  • Such films have a resistivity of about 1.6.10 -6 ohm.m, and a transmission of visible radiation of around 90% for a 300nm thick film.
  • Coated glasses of this type do not perform as well as is desired; the ability of the coating to reflect depends coextensively on each of the electron density within the coating and the electron mobility within the coating.
  • the coating is altered to increase the electron density, the electron mobility is decreased at the same time, resulting in little improvement.
  • the transmission of, for example visible light may be decreased unacceptably.
  • the invention will also find application in the manufacture of semiconducting chips. At present, these are manufactured by a complex and costly series of masking, doping and etching operations.
  • a process for coating a substrate with a thin film of electronic material comprising: contacting the substrate with a vapour capable of depositing a first, crystalline, matrix on a
  • the substrate is heated and the vapour deposited onto the heated substrate.
  • the substrate is coated with a substantially homogeneous film, and then heated to form the high and low free electron density regions.
  • a process for preparing a coated substrate comprising a film having regions of high and low free electron density, the process comprising: coating the substrate with a film capable of forming a first, crystalline, matrix on a relatively cool part of the substrate and a second matrix on a relatively hot part of the substrate epitaxially with the first, crystalline, matrix such that free electrons are generated in the second matrix; and establishing a temperature gradient across the surface of the substrate.
  • the processes are preferably conducted under a vacuum.
  • a plurality of temperature gradients are established across the substrate.
  • the temperature gradient is at least 500 deg C m-i, most preferably at least 5000 deg C m -1 .
  • the temperature difference across the temperature gradient is preferably at least 1 deg C and the temperature should not be higher than the melting points of the deposited materials.
  • the invention also provides a coated substrate, the coating comprising a thin film having first regions of high free electron density adjacent second regions of high electron mobility, so that free electrons can move from the first regions into the second regions.
  • the vapour comprises ITO in which case a free electron rich area of tin-rich In2O3 and a free electron free area of In2O3 are formed.
  • the process is carried out in an oxygen atmosphere, and a vapour of pure indium or Ina ⁇ 3 is used.
  • An area of free electron rich In2O3-x is formed adjacent to an In2O3 area, free of free electrons.
  • the process deposits ITO at a rate of 5nm minute -1 .
  • Preferred substrates include glass and silica.
  • Coated substrates made by the process of the invention show good conductivity compared with those made by known processes, and hence high reflectance.
  • the inventor believes that the mechanism by which this is achieved may be as follows.
  • the vapour for example In2O3/SnO2
  • the first component InzO3
  • the crystals of this component are oriented with each other.
  • the second component tin oxide
  • the second matrix deposits epitaxially, that is, it adopts the structure of the first component.
  • the mobility of the free electrons in the second (tin-rich) matrix is low, because of the charge on some of the constituent molecules, the free electrons readily move into the first matrix (In2O3) in which they are more mobile. Since the crystals of the first component are oriented with each other, the electron mobility in the first, crystalline, matrix is good.
  • Figure 1 shows schematically a sheet of substrate treated by a process according to the invention
  • Figure 2 shows schematically apparatus for preparing the sheet of Figure 1;
  • Figure 3 shows a detail of Figure 2
  • Figure 4 shows schematically a detail from an alternative apparatus
  • Figure 5 shows schematically a sheet of substrate treated by a process according to the invention in the apparatus of
  • Figure 6 shows schematically a float glass making process according to the invention.
  • a silica slab In a vacuum, a silica slab, approximately 5cm in length, 2.5cm in width and 1mm in thickness is held about 30cm above a crucible containing sintered pellets of In2O3/SnO2.
  • the silica slab is heated by an array of heating elements 1mm in diameter about 0.6cm apart about 0.6cm apart on the surface of the slab, to a temperature of 350oC adjacent the heating elements and 345°C at the midpoints between the elements.
  • the pellets are vaporised with an electron beam, and the vapour is allowed to crystallise on the region of the silica rod between the heaters for 1 hour.
  • the temperature gradient is held for 24 hrs.
  • the product consists of the substrate having on its surface, over the areas between the heating elements, "stripes" of free electron rich tin-rich In2O3 50 nm wide adjacent "stripes" of In2O3 200 nm wide.
  • the product exhibits considerably lower resistivity
  • Example 1 a silica slab of the dimensions indicated in Example 1 was treated as in Example 1, except that the temperature of the slab adjacent the heating elements was 350oC and the temperature of the midpoints between the heating elements was 300°C. The temperature gradient was held for 2 hrs. The product was the same as that achieved in Example 1.
  • the heater elements are reduced in size to a diameter of 250 ⁇ m with a separation of 0.4mm.
  • the heaters are then covered by a silicon film. This results in a steeper temperature gradient between the peaks adjacent the heaters and the troughs adjacent the mid-points.
  • Such an arrangement improves the process and leads to faster segregation at a lower temperature limit of typically 250°C in the troughs and 300°C at the heaters.
  • the process is also improved if the deposition rate is reduced to, for example, 5 nm minute -1 .
  • Figure 1 shows a sheet 10 of silica produced by Examples 1 and 2, coated in a thin film of stripes 12 of In2 O3 and stripes 14 of tin-rich In2O3.
  • Figure 2 shows apparatus 16, in use, for conducting the process of the invention described in Examples 1 and 2 to prepare a coated silica sheet of the type shown in Figure 1.
  • the apparatus is inside a vacuum chamber (not shown) and includes a substrate holder 18, shown holding a sheet of silica 20, and an array of electrical resistance heaters, one of which is indicated by reference number 22.
  • the array of heaters 22 is shown schematically in Figure 3.
  • the heaters 22 are wired in series and connected to the terminals 24 of an electric power source (not shown).
  • the heaters are disposed in the holder 18 so as to be in contact with a sheet 20 of silica held in the holder.
  • the apparatus When the heaters are operating, they set up a series of temperature gradients across the sheet of silica, with temperature peaks corresponding to the positions of the heaters and troughs at corresponding to the mid pair of the gaps between the heaters.
  • the apparatus also includes a crucible 26 holding a mixture of In2O3 and SnO2.
  • a sheet of silica 20 is secured in the substrate holder 18, so that the heaters 22 are in contact with the silica to set up the series of temperature gradients across the sheet.
  • the In2O3/SnO2 mixture is vaporised by an electron beam (not shown) to create a cloud 28 of vapour.
  • the vapour deposits in a film 30 on the silica sheet 20, as described before, with In2O3 depositing in stripes on the cooler parts of the silica and tin-rich In2 ⁇ s depositing in stripes on the hotter parts of the sheet, to give the pattern shown in Figure 1.
  • Figure 4 shows an alternative array of heaters 32 in the substrate holder 18 in which the heaters each heat a point on the substrate surface, resulting in the pattern shown in Figure 5, in which a substrate sheet 34 carries a continuous film 36 of In2O3 interspersed with dots 38 of tin-rich In2O3. This pattern allows free electrons generated in the tin-rich dots to move over the entire surface of the substrate sheet 34 in the In2O3 layer 36.
  • the glass substrate is coated with ITO.
  • ITO infra-red radiation.
  • the effectiveness of the glass at reflecting IR radiation is, however, limited. If the amount of tin oxide employed is increased, to increase the free electron density, the mobility of the free electrons decreases because of the additional charged tin atoms present. Thus, to achieve high levels of reflectance of IR radiation, the coating may be so thick as to impair visible light transmission.
  • the free electrons are able to move into the first matrix, In2O3, in which they are relatively mobile.
  • the process of the invention may conveniently be carried out in a float glass making process, illustrated schematically in Figure 6.
  • a float glass process continuous glass strip 40 from a furnace enters a float tank 42, in which it lies on molten tin to impart flat surfaces to the strip.
  • the interior of the tank is held at around 1050°C.
  • the strip glass 40 leaves the float tank 42 and enters a film forming zone
  • the glass is at about 800 °C when it enters the zone 44.
  • an endless belt 46 running
  • the outer surface of the belt 46 carries thermally conductive ceramic strips 48, lying perpendicular to the direction of travel of the glass strip.
  • the inner surface of the belt 46 carries heat conducting rollers 50, which under- (or over-) lie the ceramic strips 48, and are in thermally conductive relationship with them.
  • the heat conducting rollers 50 run on a heat sink 50, around which the endless belt 46 travels.
  • the glass strip 40 passes through the zone 44 carried on the ceramic strips 48, which conducts heat away from the parts of the glass strip 40 with which they are in contract to the heat sink 52, through the conductive rollers 50. This establishes a series of temperature gradients, the troughs of which correspond to the positions of the ceramic strips 48.
  • the temperature gradient may be improved by substituting metal strips for the ceramic strips 48.
  • the glass strip 40 is then contacted (by means not shown) with ITO vapour, as described earlier, to give the finished glass strip 40', which leaves the zone 44 at a temperature of around 200°C, carrying alternating strips of In2 ⁇ s and tin-rich In2O3.
  • the glass may be treated to form a
  • substantially homogeneous ITO film and given a post-deposition heat treatment according to the invention.
  • toother embodiment of the invention comprises first
  • a coating comprising a multi-layered structure of the two matrices one of In2O3 and the other of Sn2O3. This is produced by depositing alternate layers of the two matrices, in an epitaxial structure, one having a high electron density and a relatively low electron mobility and the other having a high electron mobility and a relatively low electron density. The deposition processes used for each layer are well established.
  • the invention will also find application in the manufacture of solar cells, in which a vapour of, for example, ITO will be deposited on a substrate for example, indium phosphide, to provide an abundance of free electrons and a high mobility path for their flow.
  • a process according to the invention to manufacture a solar cell, a cell having a film with a figure of merit of around 0.2 ⁇ -1 may be achieved.
  • a further application of the invention will be in the manufacture of semiconductor chips.
  • an appropriate pattern of heaters on a silicon wafer, to generate an appropriate pattern of temperature gradients, and exposing the wafer to an appropriately composed vapour, for example phosphorus or antimony, and silicon, a pattern of pn junctions can be deposited on the wafer without the need for complex masking, doping and etching techniques.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

On produit un substrat recouvert d'une couche de revêtement comprenant des zones (14) à forte densité d'électrons libres se trouvant en relation de conductivité avec des zones (12) dans lesquelles les électrons sont très mobiles. On produit la couche de revêtement en exposant le substrat à de la vapeur pouvant se déposer de manière épitaxiale sur les deux types de zones. On produit un gradient de température à travers la surface du substrat et les deux types de zones sont déposés respectivement sur les parties les plus chaudes et les plus froides du substrat.
PCT/GB1991/002203 1990-12-11 1991-12-11 Procede pour deposer une couche sur du verre et d'autres substrats WO1992010437A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB909026875A GB9026875D0 (en) 1990-12-11 1990-12-11 Method for coating glass and other substrates
GB9026875.6 1990-12-11

Publications (1)

Publication Number Publication Date
WO1992010437A1 true WO1992010437A1 (fr) 1992-06-25

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GB (1) GB9026875D0 (fr)
WO (1) WO1992010437A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3420704A (en) * 1966-08-19 1969-01-07 Nasa Depositing semiconductor films utilizing a thermal gradient
FR2075131A5 (fr) * 1970-01-02 1971-10-08 Rca Corp
DE3309955A1 (de) * 1983-03-19 1984-09-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung von in-sn-oxid-schichten
EP0171068A2 (fr) * 1984-08-06 1986-02-12 Research Development Corporation of Japan Procédé pour la réalisation de microstructures
EP0259759A2 (fr) * 1986-09-12 1988-03-16 International Business Machines Corporation Méthode de dépôt, à basse température et pression, par vapeur chimique de couches épitaxiales de silicium

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3420704A (en) * 1966-08-19 1969-01-07 Nasa Depositing semiconductor films utilizing a thermal gradient
FR2075131A5 (fr) * 1970-01-02 1971-10-08 Rca Corp
DE3309955A1 (de) * 1983-03-19 1984-09-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung von in-sn-oxid-schichten
EP0171068A2 (fr) * 1984-08-06 1986-02-12 Research Development Corporation of Japan Procédé pour la réalisation de microstructures
EP0259759A2 (fr) * 1986-09-12 1988-03-16 International Business Machines Corporation Méthode de dépôt, à basse température et pression, par vapeur chimique de couches épitaxiales de silicium

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHEMICAL ABSTRACTS, vol. 108, no. 14, April 1988, Columbus, Ohio, US; abstract no. 117527S, page 326 ; *

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AU9042391A (en) 1992-07-08
GB9026875D0 (en) 1991-01-30

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