WO1991017488A2 - Procede de fabrication d'un circuit integre - Google Patents

Procede de fabrication d'un circuit integre Download PDF

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Publication number
WO1991017488A2
WO1991017488A2 PCT/GB1991/000718 GB9100718W WO9117488A2 WO 1991017488 A2 WO1991017488 A2 WO 1991017488A2 GB 9100718 W GB9100718 W GB 9100718W WO 9117488 A2 WO9117488 A2 WO 9117488A2
Authority
WO
WIPO (PCT)
Prior art keywords
reference beam
recording medium
image
replayed
mask
Prior art date
Application number
PCT/GB1991/000718
Other languages
English (en)
Other versions
WO1991017488A3 (fr
Inventor
William Bell Hugle
Original Assignee
Gibson, Stewart, Harry
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gibson, Stewart, Harry filed Critical Gibson, Stewart, Harry
Publication of WO1991017488A2 publication Critical patent/WO1991017488A2/fr
Publication of WO1991017488A3 publication Critical patent/WO1991017488A3/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology

Definitions

  • This invention relates to a method for use in manufacturing a transistor or other integrated circuit and more particularly to a method of manufacturing a transistor or other integrated circuit of gallium arsenide or other III - V semiconductor material.
  • a method for use in manufacturing a transistor or other integrated circuit of gallium arsenide or other III - V semiconductor material comprising forming a volume holographic image on a recording medium by interference between an object beam of coherent light after passage through a mask and a reference beam of coherent light which is totally internally reflected at a surface on which the recording medium is disposed, then replacing the mask by an element of the semiconductor material which has a coating thereon of a photosensitive substance and forming an image of the holographic recording on the photosensitive coating using a second reference beam replayed in the opposite direction from the first reference beam.
  • the holographic image is recorded on the recording medium in one apparatus and the holographic recording is replayed onto the semiconductor element in a separate, corresponding apparatus.
  • the photosensitive coating comprises a photoresist which, after exposure, is subjected to etching and the semiconductor element or wafer is processed in conventional manner, e.g. subjected to dopant diffusion.
  • the semiconductor element or wafer is processed in conventional manner, e.g. subjected to dopant diffusion.
  • etching etching
  • dopant diffusion etching
  • Several successive stages will typically be involved in the manufacture of the transistor or other integrated circuit. A number of discrete transistors or other integrated circuits may be formed on the same blank or wafer.
  • the first reference beam may be provided by a laser, but the second or conjugate reference beam may be provided either by a laser or by a light source having a distinct spectral line, close to the wavelength of the first reference beam, in which case preferably filters are used to filter out light of other wavelengths emitted by the light source.
  • the recording medium prefferably be a photo-sensitive, variable refractive index material which exhibits negligible light scatter during the course of recording the holographic image.
  • Suitable recording media are photopolymeric materials and dichromated gelatin, which exhibit negligible scatter and light absorption and do not shrink or distort during exposure and provide for a high resolution recorded image.
  • a method for use in manufacturing a transistor or other integrated circuit of gallium arsenide or other III-V semiconductor material comprising placing an element of the semiconductor material, which has a coating of photosensitive substance thereon, at a position spaced from a surface on which a recording medium is formed, the recording medium having formed therein a volume holographic image corresponding to that formed by interference between an object beam of coherent light passed through a mask at the position of the semiconductor element and a reference beam of coherent light totally internally reflected at said surface on which the recording medium is disposed, and forming an image of the holographic recording on the photosensitive coating using a reference beam replayed in a direction corresponding to the opposite direction from the first reference beam.
  • FIGURE 1 is a schematic diagram of an apparatus used for recording a holographic image onto a recording medium and then for replaying the holographic recording onto a transistor blank;
  • FIGURE 2 shows arrangements for automatically focusing the replayed image onto the transistor blank.
  • the apparatus includes a source of coherent light 10 from which an object beam OB is derived by a collimating lens 12. This beam OB is directed perpendicularly towards a surface X of a prism 14.
  • the apparatus further comprises a second source of coherent light 16 from which a reference beam RBI is derived by collimating lens 18. This beam RBI is directed perpendicular to one of the inclined faces Y of the prism.
  • the light sources 10 and 16 are derived from a single laser using a beam splitter or other arrangement.
  • a glass plate 20 is laid on the surface X of the prism 14 with oil or other index-matching substance first deposited on this surface of the prism, the glass plate 20 and prism 14 having the same refractive index as each other.
  • the reference beam RBI from laser 16 will pass 10 through the surface of the prism 14 into the plate 20 and will be totally internally reflected at the outer surface of the plate 20, the reflected beam then passing out of the prism perpendicular to its other inclined face Z.
  • the outer surface of the glass plate 20 is provided with a coating 21 of a 15 recording medium, for example either a photopolymeric material or dichromated gelatin as described above.
  • a mask 22, formed with a pattern to be recorded, is disposed close to the glass plate 20 and is spaced therefrom by spacers 24.
  • the object beam OB passes through the mask and onto the 20 recording medium 21 carried on the outer surface of glass plate 20. Interference occurs between this object beam OB and the reference beam RBI and the reflected beam, to produce a volume holographic image in the recording medium 21. If the recording medium 21 is a photopolymeric material as described above, the 25 image is then developed in the recording medium 21 by exposing to ultraviolet light.
  • the mask 22 is removed and replaced by a blank, which is of gallium arsenide or other III-V 30 semiconductor material.
  • the reference beam RBI is replaced by a reference beam RB2 of opposite direction i.e. the conjugate reference beam to RBI. This may be achieved by positioning the laser 16 and collimating lens 18 at 16a, 18a
  • a light source may be source which has a distinct spectral line close to the wavelength of the laser 16, filters being used to filter out other wavelengths emitted by the light source.
  • the holographic recording in the recording medium 21 on glass plate 20 is now replayed as a real image onto a light sensitive or photoresist coating on the surface of the wafer 26, using the conjugate reference beam RB2.
  • the process of replaying the holographic recording onto the semiconductor wafer 26 may be carried out on an apparatus separate but corresponding to the apparatus used for recording the holographic image from the mask onto the recording medium 21 carried on the glass plate 20.
  • the recording medium may be carried on the prism 14 and the glass plate 20 dispensed with.
  • the holographic process which has been described enables high precision, high resolution images to be reproduced.
  • the spacers 24 comprise piezoelectric elements the thickness of which can be varied in accordance with an applied electrical voltage.
  • the exposure of the semiconductor wafer 26 during replay may be carried out in a scanning mode with automatic adjustment of the position of the blank or wafer relative to the recording medium, so that each point of the wafer at its instant of exposure is at a substantially uniform distance from the medium from which the hologram is being replayed.
  • a number of different wavelengths may be used, either simultaneously or successively, to improve the interference results.
  • the scanning process may be continuous, without the need for any stepping, with continuous automatic distance-adjustment or focusing.
  • Figure 2 shows one arrangement for determining focus.
  • the reference beam RB2 passes through a beam splitter 30 before entering the prism 14.
  • a return beam from the photoresist coating PC is reflected by the beam splitter in the direction A: the portion of reference beam RB2 which is reflected by the beam splitter is reflected by a normal mirror M and returns through the beam splitter in the direction A.
  • An interferometer may be provided at this location to detect any interference fringes and provide electrical output signals for controlling the piezoelectric spacer elements described above, so that focusing is performed automatically as scanning proceeds.
  • oscillatory signals may be applied to the piezoelectric spacers 24 so as to vibrate or oscillate the semiconductor wafer over a range of spacings from the recording medium from which the hologram is being replayed onto the wafer. In this way each point across the surface of the wafer will at some instant of time be at the correct distance from the recording medium for accurate focusing onto it of the holographic image.
  • a plurality of holographic images may be formed on the holographic record medium, with the spacers 24 adjusted to alter the distance between the record medium and mask 22 for each successive exposure and a shutter being closed across the light beam OB or RBI between the successive exposures.
  • the different holographic images carried by the record medium are "stacked" in respective planes.
  • every point across the surface of the wafer will have focused thereon one or another of these "stacked" images.
  • the multiple exposures in the different focal planes have in effect extended this image contrast of the mask pattern along the light axis.
  • each such pattern must be aligned with the preceding one.
  • a global coarse alignment can be made with reference to the edges of the semiconductor wafer and carried out mechanically.
  • a fine alignment can be carried out by the use of a grating structure on the mask which will then become part of the recorded hologram.
  • An equivalent grating structure must be provided on the semiconductor wafer. The interaction of the spatial phase variation of the imaged grating with the grating on the wafer will produce a light intensity that is proportional to the relative alignment of the two structures.
  • a different wavelength may be needed for alignment than is used for exposure of the pattern.
  • the prism 14 used during replay may be truncated form, with its apex replaced by a flat surface parallel to its surface X, as shown by a dotted line in Figure 1. Then the alignment can be checked by directing a beam B of appropriate wavelength normally through the flat surface and observing the reflected interference pattern through the surface.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Holo Graphy (AREA)

Abstract

Un procédé utilisé pour la fabrication d'un circuit intégré à partir d'un élément en gallium ou d'un autre matériau semi-conducteur III-V consiste à former une image holographique sur un support d'enregistrement (21) par interférence entre un faisceau objet (OB) de lumière cohérente passant à travers un cache (2) et un faisceau de référence (RB1) de lumière cohérente totalement réfléchi vers l'intérieur sur une surface sur laquelle est placé le support d'enregistrement, puis à remplacer le cache par un élément en matériau semi-conducteur revêtu d'un enduit photosensible et à projeter un second faisceau de référence (RB2) dans la direction opposée à celle du premier faisceau de référence (RB1).
PCT/GB1991/000718 1990-05-03 1991-05-03 Procede de fabrication d'un circuit integre WO1991017488A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9010009.0 1990-05-03
GB909010009A GB9010009D0 (en) 1990-05-03 1990-05-03 Method of manufacturing a transistor

Publications (2)

Publication Number Publication Date
WO1991017488A2 true WO1991017488A2 (fr) 1991-11-14
WO1991017488A3 WO1991017488A3 (fr) 1991-12-12

Family

ID=10675442

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1991/000718 WO1991017488A2 (fr) 1990-05-03 1991-05-03 Procede de fabrication d'un circuit integre

Country Status (2)

Country Link
GB (1) GB9010009D0 (fr)
WO (1) WO1991017488A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0560310A2 (fr) * 1992-03-13 1993-09-15 Holtronic Technologies Ltd. Méthode pour la production d'hologrammes à réflexion interne totale de haute qualité

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3635540A (en) * 1968-09-19 1972-01-18 Agfa Gevaert Ag Holography with surface waves
EP0251681A2 (fr) * 1986-06-30 1988-01-07 Holtronic Technologies Limited Fabrication de circuits intégrés utilisant des techniques holographiques
JPS6381877A (ja) * 1986-09-25 1988-04-12 Mitsubishi Electric Corp 半導体負性抵抗素子
WO1990011601A2 (fr) * 1989-03-22 1990-10-04 Gibson Stewart Harry Methode de fabrication de disques optiques
WO1990013062A2 (fr) * 1989-04-19 1990-11-01 Gibson, Stewart, Harry Realisation de visualisations sur ecran plat

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3635540A (en) * 1968-09-19 1972-01-18 Agfa Gevaert Ag Holography with surface waves
EP0251681A2 (fr) * 1986-06-30 1988-01-07 Holtronic Technologies Limited Fabrication de circuits intégrés utilisant des techniques holographiques
JPS6381877A (ja) * 1986-09-25 1988-04-12 Mitsubishi Electric Corp 半導体負性抵抗素子
WO1990011601A2 (fr) * 1989-03-22 1990-10-04 Gibson Stewart Harry Methode de fabrication de disques optiques
WO1990013062A2 (fr) * 1989-04-19 1990-11-01 Gibson, Stewart, Harry Realisation de visualisations sur ecran plat

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Electronics, vol. 43, no. 6, 16 March 1970, "Masking by hologram", pages 64-65, see page 65, left-hand column, lines 14-20 *
Optik, vol. 30, no. 1, 1969, H. Nassenstein: "Interference, diffraction and holography with surface waves ("subwaves").II.", pages 44-55, see figure 4b; page 54, lines 7-10; page 46, lines 3-8 *
Patents Abstracts of Japan, vol. 12, 29 August 1988, no. 318 (72-E-650)[3165], & JP, A, 63081877 (MITSUBISHI) 12 April 1988 *
Phyics Letters, vol. 28A, no. 3, 18 November 1968, H. Nassenstein: "Holographie und Interferenzversuche mit inhomogenen Oberfl{chenwellen", pages 249-251, see page 250, left-hand column, lines 2-8,14-25; page 250, right-hand column, lines 32-36 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0560310A2 (fr) * 1992-03-13 1993-09-15 Holtronic Technologies Ltd. Méthode pour la production d'hologrammes à réflexion interne totale de haute qualité
EP0560310B1 (fr) * 1992-03-13 1998-06-10 Holtronic Technologies Ltd. Méthode pour la production d'hologrammes à réflexion interne totale de haute qualité

Also Published As

Publication number Publication date
GB9010009D0 (en) 1990-06-27
WO1991017488A3 (fr) 1991-12-12

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