WO1990007390A1 - Procedes et appareil de deposition de materiaux - Google Patents

Procedes et appareil de deposition de materiaux Download PDF

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Publication number
WO1990007390A1
WO1990007390A1 PCT/US1989/005882 US8905882W WO9007390A1 WO 1990007390 A1 WO1990007390 A1 WO 1990007390A1 US 8905882 W US8905882 W US 8905882W WO 9007390 A1 WO9007390 A1 WO 9007390A1
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WIPO (PCT)
Prior art keywords
chamber
source
deposited
component
film
Prior art date
Application number
PCT/US1989/005882
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English (en)
Inventor
Larry D. Mcmillan
Carlos A. Paz De Araujo
Original Assignee
Symetrix Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Symetrix Corporation filed Critical Symetrix Corporation
Priority to KR1019900701908A priority Critical patent/KR910700103A/ko
Publication of WO1990007390A1 publication Critical patent/WO1990007390A1/fr
Priority to US07/993,380 priority patent/US5456945A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers

Definitions

  • the invention relates to methods for depositing high quality films . of complex (compound) materials on substrates at high deposition rates, and apparatus for effecting such methods.
  • the invention relates to photo/plasma-enhanced, rapidly thermally pulsed metallorganic chemical vapor deposition from stabilized compound sources depositing high quality, stoichiometrically-correct, thin films of a large variety of complex compounds at high deposition rates, and computer controlled apparatus for effecting such methods.
  • a first embodiment provides a method and apparatus for depositing a thin film on a substrate, comprising the steps of: providing a substrate in an enclosed deposition chamber; introducing at least one vaporized compound source into the chamber at a controlled flow rate; and controlling first means to apply a spectral energy bath to the source within the chamber in a controlled manner to dissociate at least one component from the source and to permit the component to be deposited on the substrate.
  • the bath is tuned to provide optimal energy for dissociating the component from the vaporized source.
  • a second embodiment provides a method and apparatus for depositing a stoichiometrically-correct thin film on a substrate, comprising the steps of: providing a substrate in an enclosed deposition chamber; introducing at least one substantially stoichiometrically-correct vaporized compound source into the chamber; applying a radio frequency bias in the chamber; applying a direct current bias in the chamber; applying a spectral energy bath to the source within the chamber in a controlled manner to dissociate at least one component from the source and to permit the component to be deposited on the substrate in a stoichiometrically-correct manner; and tuning the bath to provide an optimum energy for dissociating the component from the source.
  • the invention uses the first and/or second embodiments to produce thin film from stabilized compound sources including, but not limited to, ceramics, glasseous materials, electrically-active materials, and/or ferroelectric materials, such as stabilized sol-gel or MOD (metallorgan ⁇ c decomposition) formulations having a general composition of ABO s , including PbTi0 3 , Pb x Zr y TiO s ,
  • Fig. 1 is a schematic view of a CVD apparatus according to a first embodiment.
  • Fig. 2 is a flow chart of the first embodiment.
  • Fig. 3 is a schematic of a second embodiment.
  • Fig. 4 is a perspective view of the second embodiment.
  • Fig. 1 shows a first embodiment of a low pressure CVD apparatus 1 according to the invention.
  • Apparatus 1 includes a deposition chamber 2, 'a ' !
  • substrate holder 4 which supports one or more substrates 6, a vaporized source manifold 14 for introducing a vaporized source(s) into chamber 2, first, second and third means 8, 10, 12 for applying spectral energy and/or heat to chamber 2, liquid, solid and gaseous feed units 16, 22, 28 for introducing vaporized compound sources into manifold 14, a vacuum pump 30 cooperating with chamber 2, an analyzer 32 for analyzing the composition of gases exhausted from chamber 2, a cooling unit 34 for cooling chamber 2, pressure and temperature sensors 33, 35, and a computer control unit 36 to precisely control apparatus 1.
  • Units 16, 22, 28 generate and feed a vaporized source of at least one compound into manifold 14, which in turn feeds the vaporized source into chamber 2.
  • Unit 16 includes at least one liqi.id source container 20 a d at least one carrier gas source 18 which is passed through the liquid source in container 20 to become saturated with the liquid source(s) and then fed into manifold 14 through tube 40.
  • the carrier gas(ses) may be inert or active or may contain a catalyst to increase the deposition rate.
  • Unit 22 includes at least one container 24 for containing at least one solid source, and means 26 which heats container 24 to vaporize the solid source, the vapors of which are then fed into manifold 14 through tube 42.
  • Unit 28 feeds at least one gaseous compound into manifold 14 through pipe 44.
  • Flow control valves 50, 52, 54 on the ' connector pipes 40, 42, 44, respectively, are controlled by unit 36 to precisely monitor and limit the flow rate of the vaporiied sources into manifold 14 and chamber 2.
  • units 16, 22, 28 will be used in every operation of apparatus 1, but rather one or more units 16, 22, 28 will be used to deposit a given thin film. More than one of each of units 16, 22, 28 can be used to feed a vaporized source into manifold 14 for any given thin film deposition.
  • Changes in the composition of a thin film being deposited within chamber 2 are readily achieved by introducing different vaporized sources from units 16, 22, 28 through manifold 14 into chamber 2 in an automatic, computer-controlled manner. Such changes are advantageous.
  • the surface of the thin film can be tailored to achieve ohmic contacts and to reduce depolarization due to Schottky effects.
  • stabilized sources are a preferred aspect, the invention is not so limited. Rather, other aspects, including the spectral energy and heating aspects discussed below, can be used in relation to vaporized sources which do react in chamber 2 before they are deposited on substrate 6.
  • the liquid, solid and gaseous materials introduced by units 16, 22, 28 may be tuned for doping, for stoichiometric modifications, and for formation of other materials after they are vaporized and introduced into chamber 2.
  • Means 8, 10, 12 are preferably operated in combination in a predetermined manner by unit 36 to achieve a very high (precise) degree of control of the deposition of thin films.
  • means 8, 10, 12 are controlled such that the temperature within chamber 2 will gradually increase during the course of deposition.
  • Means 8 includes one or more units spaced about chamber 2, and is preferably a light source for applying a spectral energy bath to chamber 2 which "heats" the vaporized source within chamber 2 for dissociating a desired components) from the vaporized source to permit the components) to be deposited on substrate 6.
  • the bath applied by means 8 is tuned to optimize/maximize the dissociation of the desired components) from the vaporized source.
  • Heat waves/radiant enerty provided by means 8 will be controlled in a predetermined manner to correspond to the energy needed to dissociate or crack the bonds holding the desired eomponent(s) to the metallorganic precursor or solvent in the v porized source.
  • Sources which could be used as means 8 are ultraviolet (UV) lamps and excimer lasers.
  • a ferroelectric thin film of PbTiO s is being deposited from a vaporized sol-gel source, it is preferable to use a Danielson-type UV light source device controlled to emit UV light rays having a wavelength of approximately 180- 260 nanometers. UV light rays in this wavelength range are particularly effective in resonating and dissociating the hydroxyl bonds holding the PbTi0 3 clusters (networks or chains) within the precursor or common, solvent m ; the, f , vaporized source.
  • Means 8 can be controlled in a pulsed manner, a constant manner and/or ramped manner, or a combination of the foregoing to form a composite control signal. If a UV is used as means 8, it is preferable to operate the source in a pulsed manner to reduce the amount of ozone generated by the spectral bath within chamber 2 (many of the complex thin films which may be deposited contain oxygen).
  • Means 10 can be a resistive heat bias type heater controlled by unit 36 to generate a high ambient temperature within chamber 2 and/or to heat substrates 6.
  • Means 10 is preferably operated to create an ambient temperature within chamber 2 which is not sufficient in and of itself to dissociate the desired component(s) from the vaporized compound source and deposit these component(s).
  • Means 10 is preferably operated to create an ambient temperature within chamber 2 which, when combined with the tuned spectral bath provided by means 8 and the timed heat pulses of the third means 12, will dissociate the desired component(s) from the vaporized source in an optimized, precisely controlled manner, without detrimentally affecting the deposited thin film or the underlying substrates 6.
  • Means 12 includes one or more units spaced about chamber 2, and is controlled by unit 36 to apply heat energy heating pulses to the vaporized source within chamber 2 in a carefully timed/synchronized manner corresponding to a plurality of factors, including input flow rate of the vaporized source into chamber 2, desired thin film layer thickness, and (if necessary) the energy requirements needed to activate the thin film being deposited.
  • a plurality of factors including input flow rate of the vaporized source into chamber 2, desired thin film layer thickness, and (if necessary) the energy requirements needed to activate the thin film being deposited.
  • Means 12 is controlled by unit 36 to rapidly thermally stress chamber 2 with carefully timed high energy heating pulses and/or ramps during the course of deposition.
  • the rapid thermal stressing of chamber 2 is calculated and controlled: so that at every instant the film is at the right activation temperature for deposition, whereby the polar lattice of the film being deposited is being properly, dynamically activated; to continue dissociation of the desired component(s) from the vaporized compound source while preventing the formation of large grains and secondary phases in the deposited film; and to maintain the temperature of the deposited film within acceptable limits of the particular substrate 6 onto which the film is being deposited, which may be an integrated circuit (IC).
  • Acceptable limits of IC processing are a function of the particular IC step at which the film is being deposited. The temperature cannot be so high as to damage the underlying substrate or IC onto which the film is being deposited.
  • Means 12 preferably includes one or more halogen lamps, water cooled arc lamps and/or microwave sources and/or resistive heaters that can be pulsed, placed about chamber 2 and aimed to direct high energy pulses towards a film being deposited.
  • Means 12 is an important aspect in that it is controllable with a high degree of precision to quickly provide large amounts of energy when it is needed and where it is needed. By controlling means 12 it is possible to precisely control: the rate of chemical dissociations within chamber 2; the layer by layer thickness of the film being deposited and the activation of the film being deposited.
  • means 8 is tuned to maximize dissociation " of the ' _ty_ ⁇ __y bonds, and r ⁇ aris ' 12 is actuated in short cycles, such as 3-10 seconds, and/or longer ramps to rapidly thermal stress chamber 2 to permit the PbTi0 3 to be properly deposited and activated over substrate 6 in a very uniform, layer by layer manner.
  • An important parameter of many complex thin " films, such as ferroelectrics, is that they are generally required to be quite thin (for example, within a range of 100-5000 A°) and such film thicknesses can be readily achieved according to the invention.
  • the invention can be used to generate much thicker films, if desired.
  • the methods and apparatus according to the invention are controlled such that the temperature within chamber 2 progressively increases over the course of a film's deposition.
  • ⁇ temperature rising rate
  • a second (optional) use of means 12 is in-situ annealing of a deposited film within chamber 2 as a final processing step. After the proper film thickness has been deposited, means 12 may be controlled to apply high temperature pulses (e.g. 700 ⁇ C - 950°C) to the film for an appropriate time period.
  • high temperature pulses e.g. 700 ⁇ C - 950°C
  • Such appropriate time period can be as little as 3 seconds and should not exceed 2 minutes.
  • This rapid, in-situ, thermal annealing technique is advantageous because it eliminates the loss of certain critical elements (such as lead) which undesirably occurs during conventional, high temperature annealing processes.
  • a freeze drying unit 34 (or cold bed) can be used for lowering the temperature of chamber 2.
  • Unit 34 is controlled by unit 36 according to predetermined parameters.
  • the invention also includes a vacuum pump 30 because thin film depositions will be carried out at pressures in the range of 10" 3 torr through
  • Fig. 2 shows a flow chart of a computer controlled deposition process according to the invention.
  • the computer process is started or initialized.
  • the desired parameters of the film to be deposited are programmed into the computer including, desired film thickness, UV bandwidth of means 8, thermal stress sequencing by means 10, activation requirements of the film, mass flow of the vaporized source from units 16, 22,
  • the activation requirements of the film are primarily functions of: (1) the temperature of the deposition process at each step T gi t; and (2) the temperature rising rate ⁇ within the chamber.
  • the unit 36 determines, on the basis of the signal from the analyzer 32, whether maximum dissociation of the desired component(s) is occurring within chamber 2. If maximum dissociation is not occurring, unit 36 will adjust one or more process parameters (including retuning of means 8, adjusting mass flow, and adjusting means 12 to change the ambient temperature within chamber 2) at stage 108.
  • unit 36 initializes film deposition, such as by introducing substrates 6.
  • unit 36 continues the deposition process, including progressively increasing the temperature within chamber 2.
  • film thickness is monitored. If the desired film thickness has not been achieved, the deposition is continued through stages 116 and 112.
  • Figs. 3 and 4 show a second embodiment ?/h»V ⁇ is a ⁇ i;o-._ /plasma- enhanced rapid thermally pulsed metallorgan ⁇ c CVD from stabilized compound sources. The photo-enhancement comes from a UV source as well as from RF decomposition because of the collision of particles.
  • the second embodiment uses some of the elements described and shown in Fig. 1. To minimize description of the second embodiment, the description of such Fig. 1 elements will not be repeated, and descriptive labels have been included in Figs. 3 and 4. The abundance of descriptive labels and structure shown i -Figs. 3 and ⁇ -m ⁇ combinatipn w th t e above description of Fig. 1, makes the second embodiment clear to the artisan with little or no further description.
  • the apparatus 60 shown in Figs. 3 and 4 includes a deposition or main process chamber 62 and electrical means 64, 66, 68 for applying an RF bias and a DC bias in the chamber 62.
  • Fig. 3 shows the RF-DC input 64
  • Fig. 4 shows the RF feedthru 66 and RF power supply 68.
  • a rapid thermal processor 70 having an internal radiant heat source for rapid thermal processing, and a plurality of sol-gel atomizer sources 72, 74, 76, 78 with independent sol-gel control panels 80, 82, 84, 86.
  • Chamber 62 is provided with a demountable rectangular flange 87 through which the plurality of separate vaporized sol-gel sources are introduced.
  • Chamber 62 has a self-contained rapid thermal heating panel, RF-DC electrodes, and a thermally-controlled heated platen.
  • a 0-100 capacitance manometer monitors the pressure in chamber 62, and its signal controls the downstream throttle valve to maintain precise pressures in chamber 62.
  • a hinged top cover is "0" ring-sealed to provide rapid access to chamber 62 for modification to existing fixtures.
  • the RF-DC electrode 88 penetrates through the top cover and has appropriate shields and filter networks.
  • ' Processor 70 includes a high-watt density planar surface 89 opposite the heated platen 90.
  • a quartz window protects the planar surface 89 from depositions. Spare ports for viewing and access for other source materials are provided.
  • a linear transporter 94 enables the movemeni of substrate from a vacuum load lock to chamber 62.
  • Chamber 92 is rough pumped, and then high vacuum pumped through a turbomolecular pump 95 with appropriate valves. High vacuum pump-down of chamber 62 is accomplished with turbomolecular pump 95 backed by mechancal pump 96.
  • An RGA (residual gas analyzer) system including an RGA 97, an RGA head 98, an RGA power supply 99, and an RGA spectra printer 100 is provided.
  • the RGA system is provided for analyzing the cracking patterns within chamber 62 and for analyzing the decomposition products of chamber 62 from 1 atmosphere to extremely low pressures. Mass resolution of up to 200 AMU is provided.
  • Printer 100 replicates the spectra displayed on the CRT screen.
  • the system valves and controls are interlocked to provide for safe and proper operation of the system.
  • a schematic valve control 101 is provided to operate the system and system elements with lighted indicators to show their status.
  • the planar radiant panel 89 has a low mass, fast response time element which is capable of being pulsed by the appropriate control circuitry.
  • the sol- gel sources are provided with means to control the temperature control and dispersion rates of the source materials into chamber 62.
  • a separate mass flow channel 102 is used to introduce oxygen and/or any other inert or process- active gases into chamber 62.
  • Chambers 92 and 62 are capable of being high vacuum pumped by means of pump 95.
  • the RF-DC plasma system is supplied with a matching network 103.
  • the exhaust system includes a mechanical pump 104, a cold trap 105 with purge features, and throttle valve with controls.
  • the effluents are directed to a burn box and scrubber combination 106 to assure safe disposal of toxic, corrosive and flammable vapors, if any.
  • sol-gel compound source is agitated ultrasonically to atomize the compound before it is introduced into the process chamber.
  • Another aspect of the invention is that a single precursor or solvent is used to predetermine how the vaporized compound source will crack' inside the processing chamber. With a single precursor or solvent, the system can be tuned to that precursor to manage the process precisely. Another aspect of the invention involves a solvent exchange technique.
  • a c ⁇ mp__nd'5 will dissolve in one particular solvent only and no' other solvent.
  • a compound Y may dissolve in a different solvent and the solvent for compound X is not compatible with the solvent for compound Y.
  • a solvent exchange technique arrives at a common solvent in order to produce the sol-gel having compounds X and Y. That common solvent is the specially designed single precursor to which the system may be tuned.
  • the present invention utilizes tailoring a common solvent for the correct vapor pressure.
  • the present invention permits the engineering of the deposited material layer by layer, and determining in advance the conductivity and type of each layer deposited.
  • devices can be produced having graded electrodes. To do so the graded electrode is produced by changing the composition and conductivity layer by layer to produce a tailored graded contact area and/or the contact itself which is very desirable for ferroelectric devices.
  • Another aspect of the invention involves subjecting PZT or any of the perovskites, to UV plus hydrogen to make it conductive.
  • the inventive concept resides in reducing the perovskite and/or to dope it to make it n-type for the surface to control the metal to ferroelectric barrier, and thus push the p-n junction away from the surface (assuming the perovskite is p-type, and vice- versa if the material is n-type).
  • the junction is pushed in so that the depletion region is pushed into the material, rather than leaving it on the surface where it is undesirable. This can be accomplished with the CVD techniques of the invention by tailoring the layers being deposited.
  • the invention (both embodiments) is suited for the deposition of high quality thin films of compounds such as ferroelectrics, super-conductors, materials with high dielectric constants, gems, etc.
  • the invention can be used to deposit thin films of ferroelectric materials having a general composition of ABO3, including PbTiO- j , Pb j r y Ti0 3 , Pb J a v Zr z Ti0 3 , and YMn0 3 where Y represents any rare-earth element.
  • each vaporized source introduced into chamber 2 from manifold 14 is stabilized such that no, or substantially no, chemical reactions which destabilize the compound source of its predetermined molecular formulation occur within chamber 2. Rather, the stabilized vaporized source is then heated and/or subjected to RF and/or UV illumination so that a desired component or components will be dissociated, decoupled or cracked from the vaporized source and subsequently deposited on substrate 6.
  • Thin films of ferroelectric materials may be generated from an appropriate, stabilized sol-gel or MOD formulation vaporized using unit 16.
  • An MOD formulation is similar to a sol-gel formulation in that it includes a dispersion of a micropowder of the desired substance into a solution including xylene as the organic base, whereas sol-gel formulations use solutions including alcohols as the organic base.
  • stabilized sources of these materials can be designed and generated with relative ease in liquid form, including sol- gel and MOD formulations.
  • These stabilized liquid sources may be utilized to produce a large variety of new, complex (compound), stoichiometrically correct thin films.
  • Use of stabilized sources is a preferred aspect of the invention. Such sources are relatively easy to generate, even for complex compounds. Such stabilized sources are substantially less toxic and easier to handle than correspond ' /.; * reactants. whereby- the stabilized sources can be handled and processed at a substantially lower cost than the corresponding reactants.
  • the chamber 2 is designed, constructed and maintained at a reduced cost in comparison to conventional chambers. Because it is easier to control a dissociation or a chemical decomposition than a chemical reaction, it is easier to generate a high quality, stoichiometrically- correct thin film using stabilized sources rather than corresponding reactants.
  • stabilized source as used herein is i ⁇ tended to mean a source which is obtained by mixing precursors for each element using sol-gel techniques (or other mixing techniques) which lead to a common solvent, and then using the solution having that common solvent as the sole source for the entire compound. Other sources may also be used in parallel for doping or modifying the compound.
  • sol-gel the elements are already in the compound in solution with the common solvent or metallorganic precursor.
  • the invention includes the feature of generating a stabilized source by rv.'Hhiijj j _ ' r v> rr_- through a stabilized liquid source and/or atomizing the iiquid source via an ultrasound cavity with the gas passing through.
  • the liquid source is introduced into an ultrasonic cavity.
  • the carrier gas passes through the cavity and by ultrasonic vibration mixes with the liquid.
  • the resulting heavily saturated (atomized) gas-liquid mixture is introduced into the deposition chamber by way of a suitable nozzle. Injection of the gas-liquid mixture into the vacuum in the deposition chamber is controlled by such nozzle. If the Fig. 2 flowchart is used with respect to the second embodiment, stage 104 should include parameters RF bias/pre-clean and DC bias, and stage 108 should include the RF-DC biases.
  • the RF cleans the deposition surface, and cracks the vaporized compound source because the RF is tuned to the correct frequency and energy, and is also a UV generator.
  • the DC process keeps the RF from damaging the as-deposited surface; achieves poling in-situ of the ferroelectric film adding to the film quality (dipole ordering along the c-axis); and the resulting ordering reduces dislocation density which is usually responsible for fatigue and retention problems.
  • the invention allows very thin layers (below 200 A°) to be deposited.
  • Such layers need to be formed somewhere in the film (surface or middle) using dopants, stoichiometric modifications, and/or a completely different material. If these layers are formed in the middle, they function as gettering layers or floating gates. If the layers are formed on or in the surface, they function as graded surfaces or graded electrodes. Surfaces that are not graded lead to fatigue because of space charges between the electrode and the ferroelectric or a surface layer that is uncontrollable and highly damaged (high in dislocation density).
  • a controlled surface is a key benefit of this invention.
  • a thin surface layer may be created prior to electroding, and such layer may be p-type doped or n-type doped.
  • a controlled surface means that the surface region can be tailored to have a varying composition to achieve different conductivity and dielectric constant, and pushing the depletion regions caused by self-inverted or self-depleted skin layers of wide band ferroelectric oxides. The present it! * ""'''t' n allows tailoring of layers by either doping, and/or UV-enhanced reduction in a reducing atmosphere such as hydrogen.
  • n-type or p-type layers in conjunction with breaking the top and/or bottom electrode of a capacitor into gates independently biased allows for the creation of a whole new series of devices which are critically dependent on the present invention for their fabrication.
  • the general class of such devices may be referred to as ferroelectric gated trans capacitors.
  • Such devices may be classified as split-gate, fringe-gate, or a combination of split- and/or fringe-gate.
  • the invention is ; advantageous in depositing complex, compound thin films of materials such as ferroelectrics, super-conductors, materials with high dielectric constants, gems, etc., but is not limited to depositing such complex thin films.

Abstract

Procédés et appareil permettant de déposer par déposition en phase gazeuse par procédé chimique à renforcement photo/plasma, à partir de sources de composés stabilisés, de fines couches de matériaux complexes (composés), y compris des couches ferroélectriques, des supraconducteurs et des matériaux ayant des constantes diélectriques élevées. On utilise des sources de chaleur multiples (10, 12) et/ou des sources d'énergie spectrale (8) pour appliquer, en séquences de temps précises, des impulsions thermiques rapides à haute énergie. Les gels sols des sources de composés sont atomisés par ultra-sons avant d'être introduits dans une chambre de dépôt (2).
PCT/US1989/005882 1988-12-27 1989-12-27 Procedes et appareil de deposition de materiaux WO1990007390A1 (fr)

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US07/993,380 US5456945A (en) 1988-12-27 1992-12-18 Method and apparatus for material deposition

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TWI811413B (zh) * 2018-08-01 2023-08-11 日商尼康股份有限公司 霧產生裝置、霧成膜方法、霧成膜裝置及微粒子成膜裝置

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