WO1989007341A3 - Transistor de haute mobilite a gachettes opposees - Google Patents

Transistor de haute mobilite a gachettes opposees Download PDF

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Publication number
WO1989007341A3
WO1989007341A3 PCT/US1989/000283 US8900283W WO8907341A3 WO 1989007341 A3 WO1989007341 A3 WO 1989007341A3 US 8900283 W US8900283 W US 8900283W WO 8907341 A3 WO8907341 A3 WO 8907341A3
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WO
WIPO (PCT)
Prior art keywords
high mobility
mobility transistor
opposed gates
gates
opposed
Prior art date
Application number
PCT/US1989/000283
Other languages
English (en)
Other versions
WO1989007341A2 (fr
Inventor
Mark A Hollis
William D Goodhue
Kirby B Nichols
Normand J Bergeron Jr
Original Assignee
Massachusetts Inst Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Inst Technology filed Critical Massachusetts Inst Technology
Publication of WO1989007341A2 publication Critical patent/WO1989007341A2/fr
Publication of WO1989007341A3 publication Critical patent/WO1989007341A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H01L21/28593—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T asymmetrical sectional shape
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
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    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
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    • H01L29/8122—Vertical transistors
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Sont décrits des transistors verticaux et horizontaux, tels que des dispositifs HEMT/SDHT, pourvus de gâchettes opposées destinées à prévenir les courants de fuite dans le substrat, ainsi que les procédés pour la fabrication desdits transistors. Est également décrit un procédé pour fabriquer des dispositifs V-HEMT angulaires mono-gâchette.
PCT/US1989/000283 1988-01-27 1989-01-23 Transistor de haute mobilite a gachettes opposees WO1989007341A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US149,125 1988-01-27
US07/149,125 US4839310A (en) 1988-01-27 1988-01-27 High mobility transistor with opposed-gates

Publications (2)

Publication Number Publication Date
WO1989007341A2 WO1989007341A2 (fr) 1989-08-10
WO1989007341A3 true WO1989007341A3 (fr) 1989-11-02

Family

ID=22528898

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1989/000283 WO1989007341A2 (fr) 1988-01-27 1989-01-23 Transistor de haute mobilite a gachettes opposees

Country Status (2)

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US (1) US4839310A (fr)
WO (1) WO1989007341A2 (fr)

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US5263824A (en) * 1992-11-09 1993-11-23 Fredron Corp. Remote controlled shutdown for hazardous material transport vehicle
US5323020A (en) * 1992-12-22 1994-06-21 International Business Machines Corporation High performance MESFET with multiple quantum wells
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FR2774499B1 (fr) * 1998-02-03 2000-04-07 Silmag Sa Procede de realisation d'une couche mince perpendiculaire a la surface d'un substrat
FR2834123B1 (fr) * 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
US6838325B2 (en) * 2002-10-24 2005-01-04 Raytheon Company Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor
US7439555B2 (en) * 2003-12-05 2008-10-21 International Rectifier Corporation III-nitride semiconductor device with trench structure
US7098093B2 (en) * 2004-09-13 2006-08-29 Northrop Grumman Corporation HEMT device and method of making
JP5087818B2 (ja) * 2005-03-25 2012-12-05 日亜化学工業株式会社 電界効果トランジスタ
US7541640B2 (en) * 2006-06-21 2009-06-02 Flextronics International Usa, Inc. Vertical field-effect transistor and method of forming the same
JP4367531B2 (ja) * 2007-06-06 2009-11-18 ソニー株式会社 発光素子における電極構造の形成方法、及び、積層構造体の形成方法
EP2040299A1 (fr) * 2007-09-12 2009-03-25 Forschungsverbund Berlin e.V. Dispositifs électriques dotés de caractéristiques de transfert améliorées et procédé pour personnaliser les caractéristiques de transfert d'un tel dispositif électrique
CN103201841B (zh) * 2010-11-05 2016-06-22 富士通株式会社 半导体器件及半导体器件的制造方法
US8637924B2 (en) * 2011-06-03 2014-01-28 Infineon Technologies Austria Ag Lateral trench MESFET
US8692319B2 (en) * 2011-06-03 2014-04-08 Infineon Technologies Austria Ag Lateral trench MESFET
US9837403B1 (en) * 2016-09-27 2017-12-05 International Business Machines Corporation Asymmetrical vertical transistor
CN110661170B (zh) * 2019-08-13 2021-01-08 深圳市矽赫科技有限公司 一种用于制造半导体器件隔离结构的方法及其半导体器件

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US4839310A (en) 1989-06-13
WO1989007341A2 (fr) 1989-08-10

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