WO1989004060A1 - Transistor - Google Patents
Transistor Download PDFInfo
- Publication number
- WO1989004060A1 WO1989004060A1 PCT/SE1988/000537 SE8800537W WO8904060A1 WO 1989004060 A1 WO1989004060 A1 WO 1989004060A1 SE 8800537 W SE8800537 W SE 8800537W WO 8904060 A1 WO8904060 A1 WO 8904060A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- transistor
- emitter
- gate electrode
- transistor according
- Prior art date
Links
- 239000002184 metal Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000002800 charge carrier Substances 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims 1
- 229910021339 platinum silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000005669 field effect Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
Transistor dont l'émetteur consiste en un semi-conducteur extrêmement dopé, et dont l'électrode de porte (5) est positionnée dans une couche semi-conductrice entre l'émetteur (4) et le collecteur (7) du transistor. L'électrode de porte présente une structure en forme de maille, de grille ou de doigt constituée d'un métal ou d'un composé semi-conducteur en métal. L'invention est caractérisée en ce que la distance minimale (a) entre des composants adjacents de la structure métallique de l'électrode de porte (5) et le niveau de dopage dans la couche semi-conductrice (6) sont choisis de sorte que la région entre les composants précités soit désertée de tous porteurs de charge pour toutes les tensions positives entre l'électrode de porte (5) et l'émetteur (4), et en ce que la distance (a) est supérieure à 0,5 mum.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8704121A SE8704121D0 (sv) | 1987-10-23 | 1987-10-23 | Transistor |
| SE8704121-6 | 1987-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1989004060A1 true WO1989004060A1 (fr) | 1989-05-05 |
Family
ID=20369977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/SE1988/000537 WO1989004060A1 (fr) | 1987-10-23 | 1988-10-14 | Transistor |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0382775A1 (fr) |
| SE (1) | SE8704121D0 (fr) |
| WO (1) | WO1989004060A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1016139C2 (nl) * | 1999-09-09 | 2004-08-03 | Rohm Co | Halfgeleiderchip en halfgeleiderinrichting welke deze gebruikt. |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3108491A1 (de) * | 1980-03-10 | 1982-04-01 | Nippon Telegraph and Telephone Public Corp., Tokyo | Bipolarer transistor |
| US4343015A (en) * | 1980-05-14 | 1982-08-03 | General Electric Company | Vertical channel field effect transistor |
| EP0121068A1 (fr) * | 1983-03-31 | 1984-10-10 | BBC Brown Boveri AG | Dispositif semi-conducteur de puissance et méthode de fabrication |
| EP0243684A1 (fr) * | 1986-04-30 | 1987-11-04 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Elément semi-conducteur de puissance à extinction et méthode de fabrication |
-
1987
- 1987-10-23 SE SE8704121A patent/SE8704121D0/xx unknown
-
1988
- 1988-10-14 WO PCT/SE1988/000537 patent/WO1989004060A1/fr not_active Application Discontinuation
- 1988-10-14 EP EP19880909642 patent/EP0382775A1/fr not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3108491A1 (de) * | 1980-03-10 | 1982-04-01 | Nippon Telegraph and Telephone Public Corp., Tokyo | Bipolarer transistor |
| US4343015A (en) * | 1980-05-14 | 1982-08-03 | General Electric Company | Vertical channel field effect transistor |
| EP0121068A1 (fr) * | 1983-03-31 | 1984-10-10 | BBC Brown Boveri AG | Dispositif semi-conducteur de puissance et méthode de fabrication |
| EP0243684A1 (fr) * | 1986-04-30 | 1987-11-04 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Elément semi-conducteur de puissance à extinction et méthode de fabrication |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1016139C2 (nl) * | 1999-09-09 | 2004-08-03 | Rohm Co | Halfgeleiderchip en halfgeleiderinrichting welke deze gebruikt. |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0382775A1 (fr) | 1990-08-22 |
| SE8704121D0 (sv) | 1987-10-23 |
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