EP0382775A1 - Transistor - Google Patents

Transistor

Info

Publication number
EP0382775A1
EP0382775A1 EP19880909642 EP88909642A EP0382775A1 EP 0382775 A1 EP0382775 A1 EP 0382775A1 EP 19880909642 EP19880909642 EP 19880909642 EP 88909642 A EP88909642 A EP 88909642A EP 0382775 A1 EP0382775 A1 EP 0382775A1
Authority
EP
European Patent Office
Prior art keywords
metal
transistor
emitter
transistor according
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19880909642
Other languages
German (de)
English (en)
Inventor
Staffan Gustafsson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Linkopings Silicon Construction AB
Original Assignee
Linkopings Silicon Construction AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Linkopings Silicon Construction AB filed Critical Linkopings Silicon Construction AB
Publication of EP0382775A1 publication Critical patent/EP0382775A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Definitions

  • the present invention relates to a transistor, the emitter of which consists of a highly-doped semiconductor, and the gate electrode of which, which has a mesh, grid or finger structure made of a etal or a metal—semiconducting compound, is positioned in a semi— —conducting layer between the emitter and the collector of the transistor.
  • the execution of the gate or the base of a transistor in metal offers distinct advantages over the execution of the gate as a semiconductor.
  • the first metal—base transistor was proposed as early as 1960 by C. A. Mead (C. A. Mead, Proc. IRE 48, 359 (1960)). The intention in this case was that the electrons should pass straight through the metal with the help of so—called hot electrons.
  • Other variants of early metal—base transistors include the tunnel transistor, in which the electrons tunnel through the metalLic base, proposed by Attala and Rose (US—A—3,121,809 and US—A—3,250,966). A number of variants of this transistor have also been proposed in more recent years (S. M. Sze, "Physics of Semiconductor Devices, Chapter 11, John Wiley 8 Sons).
  • Bozler's transistor known as the Permeable Base Transistor (PBT)
  • PBT Permeable Base Transistor
  • the metal- J to-metal distance, which must be crossed by the current, is very small, being of the order of 200-1500 S (0.02 - 0.15 ym) (US-A- ,495,511>, which makes the transistor difficult to manufacture.
  • the active area between the components of the metal structure is relatively highly-doped (n—doped).
  • Bozler's transistor the current passing through the transistor is controlled simply by means of the applied voltage between the gate electrode (base) and the emitter, i.e. the value of the input current at the base is of little significance to the amplification of the transistor.
  • MESFET transistors represent a group of transistors with a structure similar to that of the PBT transistor, and were proposed by Frensley et al. (W. Frensley et al. IEEE Trans, on Electron Dev. ED-32, pp. 952-356), and by Goronkin et al. (US-A-3,999,281), amongst others.
  • the transistor exhibits a distance between the gate metals of more than 0.5 ⁇ , which is considerably greater than in the PBT transistor, and relatively high doping 10 ⁇ —10 ⁇ ° atoms/cm ⁇ ), in order to prevent depletion of the charge carrier between the gate metals, which is a condition for the active function of field effect transistors.
  • This condition also means that a field effect transistor must always be subjected to an inverse voltage in order to function; that is to say a negative voltage must be applied to the gate electrode (base) in order for the transistor to be capable of functioning.
  • Baliga et al. (US—A—4,343,015) propose another, trapeze—like structure in the area of the gate for a field effect transistor, in which the distance between the gate metals is also considerably greater than 0.5 ym.
  • Vertical field effect transistors also exist with gate electrodes made of semiconductors, in which the gate electrode is executed as a finger structure; examples of these are provided by the so—called “Multichannel Vertical JFET” proposed by Zuleeg in 1963 (R. Zuleeg, Solid-State Electron. 10, pp. 559-576, .1967), and the so-called Gridistor proposed by Teszner (1962, 1972) (S. Teszner and R. Gicquel, Proc. IEEE 52, pp. 1502-1513, 1964), (US-A-3,274,461 and US-A-3,497,777).
  • Multichannel Vertical JFET proposed by Zuleeg in 1963 (R. Zuleeg, Solid-State Electron. 10, pp. 559-576, .1967)
  • Gridistor proposed by Teszner (1962, 1972) (S. Teszner and R. Gicquel, Proc. IEEE 52, pp. 1502-1513, 1964), (US-A-3,274,461
  • BSIT bipolar Static Induction Transistor
  • BSIT bipolar Static Induction Transistor
  • the gate electrode or base of this transistor is subjected to a forward voltage, i.e. if a positive voltage is applied to the base, the current through the transistor will be controlled by the current entering the base (J. Nishizawa, T. Terasaki and J. Shibata, IEEE Trans. Electron. Dev. ED-22, pp. 185 (1975) (EP,A1,243 684 and EP,A1,121 068) ); by subjecting the gate electrode to an inverse voltage, a transistor with triode—like characteristics will be obtained.
  • BSIT bipolar Static Induction Transistor
  • This transistor has a base consisting of a doped semiconductor.
  • transistors with similar structures i.e. " vertical transistors with an inlaid gate between the emitter and the collector.
  • a common feature of these, however, is the fact that they have a current—voltage characteristic or are not controlled by the current from the gate (base).
  • Examples of other such transistors are the so—called “space charge limited dielectric triode” proposed by Wright 1962 (G. T. Wright, Solid-St. Electron. 5, 17 1962) and the so-called "Space Charge Limited Triode” proposed by Zuleeg (R. Zuleeg, Solid—State Electron. 10, pp. 449-460 1967).
  • Semiconductor components with finger structures and with etched cavities may be assumed to become an increasingly common method of manufacturing components. This is concerned, on the one hand, with the continuous improvements to the manufacturing processes (plasma etching) and, on the other hand, with the advances in the development of semiconductor materials (110—silicon). This is associated with the ability to manufacture new classes of components and to make improvements to existing components. Examples of this are vertical field effect transistors, SIT transistors, memory elements, and bipolar transistors (heterojunction transistors) (DE,A1,3 108491, EP,A2,0 106724).
  • the transistors referred to above may be regarded as field—controlled transistors. There is thus no current injection from the gate electrode which is of any consequence to the amplif cation characteristics of the transistor.
  • the metal—to—metal distance across which the current is to flow is very small, being of the order of 200-1500 S CO.04-0.15 ym), and has a relatively highly-doped gate area (the area between the gate electrodes), giving a complicated manufacturing process and presenting difficulties with regard to reproducibility; or b) the current from the emitter to the collector passes via voltage—controlled "tunneling" straight through the metal, i.e.
  • the voltage on the metal electrode controls the ability of an electron to pass through the metal (in this case there is no mesh, grid or finger structure); or c) the transistors are f eld—controlled CFET), i.e. the distance between adjacent components in the gate electrode are not entirely depleted when the transistor is in its active range and when the Schottky diode of the transistor between the gate electrode and the emitter is subjected to an inverse voltage (negative voltage on the gate electrode); or d) the gate electrodes are executed as a highly-doped semiconductor.
  • a primary object of the present invention is to make available a current—controlled vertical transistor with a metal gate, with the aim of achieving a lower base resistance than in conventional transistors in which the gate consists of semi onductors. This is achieved in accordance with the invention by selecting the minimum distance between adjacent components in the metal structure of the gate electrode and the doping level in the semiconductor layer in such a way that the area between the aforementioned components is depleted on the charge carrier at all positive voltages between the gate electrode and the emitter, and in such a way that the distance is greater than 0.5 ym.
  • the achievement of a low base resistance is of critical significance to bipolar transistors Ccurrent—controlled transistors). Any increase in the base resistance, i.e.
  • the resistance to scatter in the base will reduce the capacity of the transistor to amplify at high frequencies, and is in principle the only quantity which can prevent the transistor from working at the frequencies determined by the transient time of the electrons Cthe current) from the emitter to the collector in the transistor.
  • the resistance to scatter also reduces the current capacity and the current density (the effect capacity) of the transistor, when amplification will be reduced radically at higher currents due to the fact that the base resistance distributes the current unevenly over the active surface.
  • Fig. 1 illustrates schematically a structure of the kind most commonly encountered from the point of view of production engineering.
  • Figs. 2—5 illustrate different variants of the invention, and
  • Fig. 6 is a partially sectioned perspective view of the transistor in accordance with Fig. 1.
  • Fig. 1 the designation 5 is used in respect of the transistor's gate electrode, which is situated in cavities 11 etched into a semiconducting layer 6.
  • the transistor has three connections.
  • An emitter wire 1, in which the current Ig flows, is connected to the transistor via a metal layer 3, so that so-called oh ic contact is made to the emitter 4 of the transistor.
  • a control current I ⁇ flows in a base wire 2.
  • the base wire 2 is connected to the gate electrode 5.
  • the control area of the transistor has the width a and consists of a semiconducting layer 6, which is in contact with the transistor's collector 7, which has an ohmic metal connection 8 to a collector terminal 9.
  • the transistor can be executed in principle in two different ways, n—channel and p—channel, in which the semi onducting layer 6 and the emitter 4 and the collector are executed in n—doped and in p—doped material respectively.
  • n—channel but is also applicable to p—channel if electrons are replaced by holes and holes are replaced by electrons.
  • the Schottky diode If a positive voltage is applied between the gate metal 5 and the emitter 4 (the Schottky diode is subjected to a forward voltage), current control can be obtained under certain conditions in a structure such as that proposed here.
  • the metal forms a so—called Schottky barrier, which essentially conducts a current of electrons, i.e. the current consists essentially of electrons which move from the semiconducting layer 6 to the metal gate 5.
  • the semiconductor On the assumption that the semiconductor is to all intents and purposes undoped, or is low-doped, a so—called double injection will occur, which means that a significant current will also flow from the metal gate 5 to the semiconducting layer 6.
  • This current is a so-called hole current, i.e.
  • the current is conducted by holes, which is of an order of magnitude not exceeding one half of the electron current (in practice 5—30%), although this depends to a very high degree on the semiconductor material), and will provide the controlling function in the transistor.
  • the area between adjacent components of the metal structure 5 of the gate electrode must also be totally depleted of charge in order for a controlling function to arise.
  • the injected holes form a surplus of holes, a hole plasma, between the aforementioned components of the gate electrode 5, which functions as a virtual base.
  • the size of this surplus of holes (hole plasma) is determined by the current injection from the metal gate 5, which in turn controls the main current Ig from the emitter 4 through the semiconductor Layer 6 to the collector 7. This control is achieved through the requirement for neutrality of charge in the semiconductor, i.e.
  • Every hole must have a counterpart in an electron, and as a result of the fact that a voltage applied between the emitter and the collector will draw a current of electrons to the collector.
  • the condition requiring the controlling area (the virtual base) to be depleted is determined by the depletion area of the Schottky barrier, and can be expressed as follows: where a is the distance between the gate electrodes, ⁇ j is the electrode concentration in the semiconductor, ⁇ g is the dielectric constant for the semiconductor, and ⁇ g is the integral potential formed in the Schottky barrier when the applied voltage is 0 V.
  • the requirement for the semiconductor to be low-doped or undoped is determined by the relationship:
  • ND is the donor concentration (doping concentration) in the semiconducting layer
  • n - is the intrinsic concentration of charge carriers for the semiconductor in the layer. In the case of silicon this gives a maximum value for p of approximately 10 1 /cm3.
  • the metal structure 5 is connected directly to the semiconducting layer 6, thus enabling manufacture of the transistor to take place without etched cavities.
  • the undesired electron current from the emitter 4 to the gate electrode 5 must be avoided as far as possible; see Fig. 2. This is achieved by depositing an oxide layer 10 on the metal structure of the gate electrode 5.
  • the efficiency of the transistor also increases if a thin layer of oxide 12 is introduced between the metal structure and the semiconducting layer (H. C. Card et al., Solid—St. Electron. 16, pp. 365-374, 1973); see Fig. 3 and Fig. 4.
  • the thickness of the oxide in this case should only be about 10 Sngstr ⁇ m, 10 10 ⁇ ' u . This is considerably less than the protective oxide 10 which is deposited on the metal and which must be of the order of magnitude of 0.1 ym.
  • the collector 7 has opposite doping 13, indicated in Fig. 5 by a pattern of squares, to that of the semiconducting layer 6, the efficiency of the current can be further increased when a thyristor structure is produced; see Fig. 5.
  • the thyristor structure consists of an emitter ( n + ), the virtual base (p—plasma), the semiconductor (ri " ⁇ ) and the collector (p + ).
  • the metal electrode 5 may consist of metals or metal silicides which possess a high so—called Schottky barrier (approximately 0.7 — 0.8 V). Suitable metals'are palladium (Pd), platinum (Pt> or gold (Au).

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

Transistor dont l'émetteur consiste en un semi-conducteur extrêmement dopé, et dont l'électrode de porte (5) est positionnée dans une couche semi-conductrice entre l'émetteur (4) et le collecteur (7) du transistor. L'électrode de porte présente une structure en forme de maille, de grille ou de doigt constituée d'un métal ou d'un composé semi-conducteur en métal. L'invention est caractérisée en ce que la distance minimale (a) entre des composants adjacents de la structure métallique de l'électrode de porte (5) et le niveau de dopage dans la couche semi-conductrice (6) sont choisis de sorte que la région entre les composants précités soit désertée de tous porteurs de charge pour toutes les tensions positives entre l'électrode de porte (5) et l'émetteur (4), et en ce que la distance (a) est supérieure à 0,5 mum.
EP19880909642 1987-10-23 1988-10-14 Transistor Withdrawn EP0382775A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE8704121A SE8704121D0 (sv) 1987-10-23 1987-10-23 Transistor
SE8704121 1987-10-23

Publications (1)

Publication Number Publication Date
EP0382775A1 true EP0382775A1 (fr) 1990-08-22

Family

ID=20369977

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19880909642 Withdrawn EP0382775A1 (fr) 1987-10-23 1988-10-14 Transistor

Country Status (3)

Country Link
EP (1) EP0382775A1 (fr)
SE (1) SE8704121D0 (fr)
WO (1) WO1989004060A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085463A (ja) * 1999-09-09 2001-03-30 Rohm Co Ltd 半導体チップおよびそれを用いた半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ
US4343015A (en) * 1980-05-14 1982-08-03 General Electric Company Vertical channel field effect transistor
EP0121068B1 (fr) * 1983-03-31 1988-01-13 BBC Brown Boveri AG Dispositif semi-conducteur de puissance et méthode de fabrication
CH670333A5 (fr) * 1986-04-30 1989-05-31 Bbc Brown Boveri & Cie

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO8904060A1 *

Also Published As

Publication number Publication date
SE8704121D0 (sv) 1987-10-23
WO1989004060A1 (fr) 1989-05-05

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