WO1987006767A1 - Surface mountable diode - Google Patents

Surface mountable diode Download PDF

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Publication number
WO1987006767A1
WO1987006767A1 PCT/US1987/000894 US8700894W WO8706767A1 WO 1987006767 A1 WO1987006767 A1 WO 1987006767A1 US 8700894 W US8700894 W US 8700894W WO 8706767 A1 WO8706767 A1 WO 8706767A1
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WO
WIPO (PCT)
Prior art keywords
conductive
regions
faces
base
junction
Prior art date
Application number
PCT/US1987/000894
Other languages
French (fr)
Inventor
Cecil Kent Walters
Original Assignee
Amp Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amp Incorporated filed Critical Amp Incorporated
Priority to JP62503012A priority Critical patent/JPH0666409B2/en
Priority to DE8787903501T priority patent/DE3780564T2/en
Priority to KR1019870701268A priority patent/KR960003856B1/en
Publication of WO1987006767A1 publication Critical patent/WO1987006767A1/en

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Definitions

  • This invention relates to surface mountable diodes which can readily be surface mounted in a minimum of space and with a minimum of complexity.
  • Diodes are in widespread use as transient suppression devices, rectifiers, light sources, light detectors, and voltage references. In many applications it is important to be able to surface mount a diode directly to a surface such as a circuit board without wire leads or the like. In particular, when bipo- lar or unipolar zener diodes are used as transient suppression devices, high mounting density is often of key importance.
  • a surface mount ⁇ ed diode comprises a semiconductor element which defines a base and first and second opposed faces extending away from the base. This semiconductor element comprises a p-n junction electrically interconnected between the opposed faces and spaced from the base. A first conductive layer is secured to the first opposed face, and means are provided for electrically intercon ⁇ necting the second opposed face with a second conductive layer arranged generally parallel to the first conductive layer such that the p-n junction is interposed between the two conductive layers.
  • Each of the conductive layers defines a respective exposed surface and the base is oriented parallel to a mounting plane defined by a mounting surface such that each of the exposed surfaces of the conductive layers is in contact with a respective spaced contact of the mounting surface, and the exposed surfaces of the conductive layers extend away from the mounting plane.
  • Two masses of a conductive securing agent such as a suitable solder or conductive epoxy, are each secured both to a respective one of the contacts and the exposed surface of the associated conductive layers to form fillets.
  • the securing agent is selected to move onto the exposed surfaces by capillary action when in a fluid state.
  • the exposed surfaces of the conductive layers extend transverse both to the base of the semiconductive element and to the contacts of the mounting surface.
  • the diode can, for example, be either a unipolar or a bipolar zener diode for use as a transient suppression device.
  • a surface mountable bipolar diode which comprises a first semiconductor element which defines a first outer face, a first inner face, and means for forming a first p-n junction there ⁇ between.
  • a second semiconductor element is provid- ed which defines a second outer face, a second inner face, and means for forming a second p-n junction therebetween.
  • First means electrically interconnect and mechanically secure the first and second faces together between the outer faces in order to form an integrated unit which defines a base extending between the outer faces, wherein the first and second p-n junctions are oriented with reverse polarity.
  • First and second conductive surfaces are mounted on the first and second outer faces such that the first and second p-n junctions are positioned between the first and second conductive surfaces and the conductive surfaces extend away from the base.
  • the conductive surfaces are positioned for surface mounting to respective mounting surfaces extending alongside the base.
  • the con ⁇ ductive surfaces are oriented parallel to each other and substan ⁇ tially transverse to the base.
  • the conductive surfaces comprise respective metallized ' layers.
  • the bipolar diode of this invention can, for example, be formed as a bipolar zener diode for use as a transient sup ⁇ pression device.
  • the bipolar diode of this invention provides important advantages in that both p-n junctions are located near the center of the device, and are therefore well protected.
  • the p-n junctions are centered on the respective inner faces and the entire bipolar diode is symmetrical such that it can be flipped end-for-end and rotated about an axis extend- ing between the conductive surfaces without altering the elec ⁇ trical function of the diode.
  • FIGURE 1 is a perspective view of a bipolar diode which incorporates a first presently preferred embodiment of this invention, mounted to a circuit board;
  • FIGURE 2 is a longitudinal section taken along the center- line of the diode of Figure 1 ;
  • FIGURE 3 is a perspective view of a wafer showing compo ⁇ nents of the diode of Figure 1 in an intermediate stage of man ⁇ ufacture;
  • FIGURE 4 is a plan view of the circuit board of Figure 1 prior to mounting the diode;
  • FIGURE 5 is a section of a unipolar diode which incorpo ⁇ rates a second preferred embodiment of this invention.
  • FIGS. 1 and 2 show two views of a bipolar zener diode which incorporates a first _ n _ presently preferred embodiment of this invention.
  • This diode includes first and second semiconductor elements or dies 1 , 2 each of which defines a respective p-n junction as described in greater detail below.
  • the two semiconductor elements 1 , 2 are bonded together in a bonding region 3 adjacent to the p-n junctions.
  • Each of the semiconductor elements 1 , 2 defines a respective outer face 4, 5 a respective inner face 36, 38 and at least one respective base 31 , 32.
  • the outer faces 4, 5 are preferably oriented parallel to one another and transverse to the bases 31 , 32.
  • each of the outer faces 4, 5 defines a respective metallized layer, and these metallized layers are positioned to contact and extend transversely away from respective printed circuit contacts 8, 9.
  • Bonding joints 6, 7 formed of a material, such as an appropriate solder or conductive epoxy, electrically and mechanically interconnect the outer faces 4, 5 with the respective printed circuit board contacts 8, 9.
  • the diode of Figures 1 and 2 is electrically intercon ⁇ nected to the printed circuit board contacts in an economical manner without the use of wire bonds, clips, or other conven ⁇ tional lead attachments.
  • unnecessary packaging elements have been eliminated, and it is the passivated semi- conductor elements themselves which are used to connect the diode with the printed circuit board contacts, 8, 9.
  • FIG 2 is a cross section illustrating in detail the various component elements of the bipolar zener diode of Figure 1.
  • This diode operates bidirectionally to conduct signals above a prede- termined voltage threshold in either direction. If one of the printed circuit board contacts 8 is connected to a signal source such as a pin of a connector, and the other contact 8, 9 is connected to ground, the bidirectional zener diode of Figures 1 and 2 is well suited for use as a transient suppression device which can be made extremely compact in size. As pointed out below, this invention is not limited to use with bipolar devices, but can readily be adapted to unipolar diodes.
  • the illustrated diode is formed of two semiconductor elements 1 , 2.
  • Each of the semi- conductor elements 1 , 2 is formed of a semiconductor material such as silicon, and each defines a respective p-n junction 10, 11 oriervted generally parallel to the outer face 4, 5 of the semiconductor element 1 , 2.
  • These p-n junctions are passivated with thermal oxide SiO- in regions 12, 13 on inner faces 36, 38 and the passivated regions are covered with a fitted borosilicate glass in regions 1 , 15 to assure adequate protection to the p-n junction 10, 11 in the environment in which the diode will be used .
  • the semiconductor elements 1 , 2 are identical and they can be fabricated in a conventional planar wafer manufacturing process. This process starts with a wafer which will be processed to form a large number of the semicon ⁇ ductor elements 1 , 2. After the various process steps have been completed, the wafer is cut or diced into the separate semiconductor elements 1 , 2. Because the diode is mounted on its side in final assembly to the printed circuit board, it is advantageous to use a relatively thick wafer in the fabrication process, which wafer is preferably formed of a low resistivity semiconductor substrate. In Figure 2, this substrate is iden- tified by the reference numerals 16 and 17 as an n+ region, which in this embodiment preferably has a resistivity of about 0.01 ohm-cm.
  • diodes in accordance with this invention can also be formed with the reverse dopant species from those shown in Figure 2, i.e. , p+ substrates can be used in conjunction with n type diffused n-p junctions.
  • the first step in the fabrication of the semiconductor element 1 , 2 is to form an epitaxial deposition layer 18 19 of a resistivity value which will help control the desired zener or avalanche voltage value desired.
  • the epitaxial layer 18, 19 preferably has a resistivity of approximately 0.03 ohm-cm, and is approxi- 5 ately 24 microns in thickness.
  • the wafer is then thermally oxidized to form a layer of SiO- which in this embodiment has a thicknes's of about 1 micron.
  • a first photolithography step is then performed to etch open a diffusion window.
  • a suitable dopant such as boron in this example
  • a diffusion drive-in step is then per ⁇ formed to drive the p-n junction to a depth of approximately 8 microns in this embodiment.
  • a p-n junction has been found suitable for a 20 volt avalanche breakdown diode.
  • the p layer formed in the drive-in step preferably has a sheet resistance of 5 about 22 ohms per square.
  • the next step in the fabrication process is to backgrind the wafer to obtain the desired final thickness for the semiconductor elements 1 , 2. Then a surface enhancement diffusion or phos ⁇ phorus getter operation is performed to form a very highly 0 doped region n++ 20, 21 having a sheet resistance of about 2 ohms per square. This very highly doped region 20, 21 pro ⁇ vides a good ohmic backside contact as explained below.
  • Such an enhancement operation can also be provided by other low temperature doping techniques with selected doped metallizations 5 as part of the backside metallization operation near the end of the overall wafer process.
  • the wafer is -again selectively etched via a photolithography step to provide an ohmic contact window through the thermal oxide which was grown 0 during the diffusion step.
  • the wafer may then be further passivated with an additional layer of borosilicate glass as shown in regions 14 and 15 in Figure 2. If such a glass layer is deposited, then a third selective etch operation is required to provide the final ohmic contact window opening.
  • a layer of 5 palladium is deposited via thin film evaporation techniques in this - 7 - ohmic contact window opening, in the region 22, 23. This thin film of palladium is then sintered to the exposed silicon in the regions 22, 23. Excess palladium is removed from the glass 14, 15 by chemical etching. Thereafter, a relatively thick silver bump contact 24, 25 is galvanically deposited over the palladium. Typically ⁇ each bump contact 24, 25 is approximately 0.001 inch in thickness.
  • a backside metallization layer 26, 27 is deposited over the enhanced layer 20, 21 .
  • This metallization layer 26, 27 is selected to provide for suitable solder flow or other con ⁇ ductive bonding material flow to these surfaces to ensure the formation of adequate fillets 28, 29 extending between the print ⁇ ed circuit board contacts 8 , 9 and the metallization layers 26 27.
  • the metallization layers 26, 27 can be formed of electro less nickel and gold depositions, or by evaporated layers of chrome followed by silver followed by gold. In addition, other metal ⁇ lization layers including solder coatings can be used. It is often important that the relative metal thickness of the layer 26, 27 be selected " to promote solder wetting without total dissolution of available metals or eventual dewetting of the metallization layer 26, 27.
  • One presently preferred embodi ⁇ ment for the metallization layers 26 , 27 includes the following layers, starting adjacent to the n++ layer 20 , 21 :
  • FIG. 3 shows a portion of the wafer 35 at the completion of the wafer fabrication process.
  • the wafer is then sawed or otherwise cut into individual dies or semiconductor elements- 1 , 2.
  • These individual semiconductor elements may be shaped as desired, and configuration such as squares, rectan ⁇ gles, triangles, pentagons, and hexagons, are all suitable. Regardless of the configuration chosen, each semiconductor element' V, 2 should define at least one base 31 , 32 which is reasonably planar to allow the finally assembled diode to rest on the base 31 , 32.
  • the bipolar diode is assembled by soldering or affixing with conductive epoxy two of the semiconductor elements 1 , 2 together with a central bond 30.
  • the central bond 30 is a solder of 95 percent lead and 5 percent tin which has a melting point of about 315° C.
  • a disc of the solder is clamped in place between the contacts 24, 25 , and the assembly is heated to create the desired bond.
  • the solder should be chosed to have a higher melting point than any solder used to mount the diode in place.
  • the two semiconductor elements 1 , 2 are rotationally aligned one with the other with the planar p-n junctions 10, 11 facing one another.
  • the metallization layers 26 , 27 are oriented paral ⁇ lel to one another and to the p-n junctions 10, 11 and perpen ⁇ dicular to the base 31 , 32.
  • the bipolar diode can be mounted with the bases 31 , 32 resting on the respective printed circuit board contacts 8 , 9 and the sensitive p-n junctions 10, 11 situated approximately midway between the printed circuit board contacts 8, 9. In this way, the p-n junctions 10 , 11 are isolated and protected.
  • the diode of Figures 1 and 2 can be formed in a wide of sizes and with a wide range of electrical characteristics.
  • the following information is provided merely to define one preferred embodiment in greater detail and is of course not intended to be in any way limiting:
  • the bipolar zener diode of Figures 1 and 2 is mounted to a printed circuit board with fillets 28, 29 of a material such as solder or epoxy which electrically interconnects the metallization layers 26, 27 with respective contacts 8 , 9 of the printed circuit board.
  • a material such as solder or epoxy which electrically interconnects the metallization layers 26, 27 with respective contacts 8 , 9 of the printed circuit board.
  • a printed circuit board 34 is cleaned and dried in an oven for about 1 hour at 100° C, and a suitable epoxy 33 is then applied to the printed circuit board between the contacts 8, 9.
  • This epoxy 33 is of the type which provides a high electrical resistance after curing .
  • the material marketed by Ablestick Co. of Cardenia, California, as Ablebond 77-2LTC has been found suitable for use as the epoxy 33.
  • the assembled diode is then • placed on the printed circuit board as shown in Figure 2 such that the central solder bond 30 is centered over the insulating epoxy 33 and each of the metallization layers 26, 27 is in elec ⁇ trical contact with a respective one of the contacts 8 , 9.
  • the printed circuit board with the mounted diode is then placed in an oven to cure the insulating epoxy 33.
  • solder paste is applied to each of the metallization layers 26, 27.
  • Solder of the type marketed as Alpha brand 60/40 solder with Alpha brand 611 flux ( RMA) has been found suitable.
  • the solder paste is then cured at a tem ⁇ perature of 80° C for 15 minutes in a suitable oven and then a reflow operation is performed in an infrared oven or a vapor phase soldering machine to form the fillets 28, 29 interconnecting the metallization layers 26, 27 with the respective contacts 8, 9.
  • the solder reflow operation should not subject the central solder bond 30 to elevated temperatures which might weaken the bond.
  • the printed circuit board is cleaned and tested and a sealing epoxy may optionally be applied to the top of the diode to flow around the central solder bond 30.
  • This sealing epoxy is cured at 150° C for 1 hour and the printed circuit board is again electrically tested.
  • the non- conductive epoxy described above may be used as the sealing epoxy.
  • a conductive epoxy for the 60/40 solder paste described above.
  • the solder reflow operation described above is elim ⁇ inated and replaced with an oven curing operation suitable for the conductive epoxy used.
  • a suitable conductive epoxy is marketed by Ablestick Co. as Ablebond 84-1 LMIT.
  • the bonding region 3 is disposed above and away from the printed circuit board contacts 8, 9, thereby reducing the possibility of undesired contact between the solder or conductive epoxy of the fillets 28 , 29 and the p-n junctions 10, 11.
  • metal pads of desired thickness may be placed on the metallization layers 26 , 27 to provide heat sinks and increased bonding surface area to the printed circuit board contacts 8, 9.
  • a protective coating in the bonding region 3 can be provided.
  • Such a protective coating may be desirable in specific mounting environments and can be provided , for example, by use of a semiconductor grade varnish , epoxy or polyimide material which can be flowed into the bonding region 3 between the semiconduc ⁇ tor elements 1 , 2 and then dried at elevated temperatures.
  • the dopant species may be reversed by starting with a p+ substrate and then doping with a suitable n dopant to form a p-n junction.
  • this invention can be used to form unipolar diodes. As shown in Figure 5, this can be done simply by eliminating the p-n junction from the semiconductor element 2 to form a simplified semiconductor element 2' .
  • This simplified semiconductor element 2' is quite similar to the semiconductor element 2 except that an n++ enhanced surface is provided in the region 23 , and the epitaxial region 19 is not required.
  • This simplified semiconductor element 2' simply provides a short circuit path from the p-n junction of the semiconductor element 1 to the printed circuit board contact 9. In this way, a unipolar or single p-n junction path between the two circuit board con ⁇ tacts 8 , 9 is provided.
  • this unipolar diode can also be fabricated with dopant species which are the reverse of those described above, as can the simplified semiconductor element 2' .
  • the simplified semiconductor element 2* may be replaced with a block metal conductor having a similarly shaped geometry.

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Abstract

A surface mountable bipolar zener diode includes first and second semiconductor elements (1, 2), each of which defines a respective p-n junction (10, 11) near a respective inner face (36, 38), and each of which defines a respective metallized layer (26, 27) on a respective outer face (4, 5). The inner faces (36, 38) are soldered together such that the p-n junctions (10, 11) are disposed near the center of the assembled diode. The outer faces (26, 27) are operated parallel to one another and to the p-n junctions (10, 11) and are disposed perpendicularly to a pair of printed circuit board contacts (8, 9). Fillets (28, 29) of solder or conductive epoxy extend between the metallized layers (26, 27) and the printed circuit board contacts (8, 9) to interconnect the bipolar zener diode with the printed circuit board contacts (8, 9).

Description

SURFACE MOUNTABLE DIODE This invention relates to surface mountable diodes which can readily be surface mounted in a minimum of space and with a minimum of complexity. Diodes are in widespread use as transient suppression devices, rectifiers, light sources, light detectors, and voltage references. In many applications it is important to be able to surface mount a diode directly to a surface such as a circuit board without wire leads or the like. In particular, when bipo- lar or unipolar zener diodes are used as transient suppression devices, high mounting density is often of key importance.
The present invention is directed to improved diodes which do not require wire leads and which can readily be made in extremely small sizes to minimize mounting space requirements. According to one aspect of this invention, a surface mount¬ ed diode comprises a semiconductor element which defines a base and first and second opposed faces extending away from the base. This semiconductor element comprises a p-n junction electrically interconnected between the opposed faces and spaced from the base. A first conductive layer is secured to the first opposed face, and means are provided for electrically intercon¬ necting the second opposed face with a second conductive layer arranged generally parallel to the first conductive layer such that the p-n junction is interposed between the two conductive layers. Each of the conductive layers defines a respective exposed surface and the base is oriented parallel to a mounting plane defined by a mounting surface such that each of the exposed surfaces of the conductive layers is in contact with a respective spaced contact of the mounting surface, and the exposed surfaces of the conductive layers extend away from the mounting plane. Two masses of a conductive securing agent, such as a suitable solder or conductive epoxy, are each secured both to a respective one of the contacts and the exposed surface of the associated conductive layers to form fillets. The securing agent is selected to move onto the exposed surfaces by capillary action when in a fluid state.
Preferably, the exposed surfaces of the conductive layers extend transverse both to the base of the semiconductive element and to the contacts of the mounting surface. The diode can, for example, be either a unipolar or a bipolar zener diode for use as a transient suppression device. By attaching the securing agent directly to the exposed surfaces of. the conductive layers which extend away from the base and contacts, the size, cost and complexity of the diode are all held to a minimum. Furthermore, the sensitive p-n junction is separated from the securing agent, thereby minimizing damage to the p-n junction. In the preferred embodiment described below, the semiconductor element defines three or more bases which are symmetrically situated around the perimeter of the semiconductor element such that any one of a number of orientations of the diode can be used without interfer¬ ing with the function of the diode. This simplifies mounting operations considerably and reduces manufacturing problems related to misoriented diodes. According to a second feature of this invention, a surface mountable bipolar diode is provided which comprises a first semiconductor element which defines a first outer face, a first inner face, and means for forming a first p-n junction there¬ between. In addition, a second semiconductor element is provid- ed which defines a second outer face, a second inner face, and means for forming a second p-n junction therebetween. First means electrically interconnect and mechanically secure the first and second faces together between the outer faces in order to form an integrated unit which defines a base extending between the outer faces, wherein the first and second p-n junctions are oriented with reverse polarity. First and second conductive surfaces are mounted on the first and second outer faces such that the first and second p-n junctions are positioned between the first and second conductive surfaces and the conductive surfaces extend away from the base. The conductive surfaces are positioned for surface mounting to respective mounting surfaces extending alongside the base. Preferably, the con¬ ductive surfaces are oriented parallel to each other and substan¬ tially transverse to the base. In the preferred embodiment described below, the conductive surfaces comprise respective metallized' layers.
The bipolar diode of this invention can, for example, be formed as a bipolar zener diode for use as a transient sup¬ pression device. The bipolar diode of this invention provides important advantages in that both p-n junctions are located near the center of the device, and are therefore well protected. Preferably, the p-n junctions are centered on the respective inner faces and the entire bipolar diode is symmetrical such that it can be flipped end-for-end and rotated about an axis extend- ing between the conductive surfaces without altering the elec¬ trical function of the diode. When this approach is used misori- entation of the diode on a circuit board is practically eliminated.
The invention itself, together with further objects and attendant advantages, will best be" understood by reference to the following detailed description, taken in conjunction with the accompanying drawings.
FIGURE 1 is a perspective view of a bipolar diode which incorporates a first presently preferred embodiment of this invention, mounted to a circuit board; FIGURE 2 is a longitudinal section taken along the center- line of the diode of Figure 1 ;
FIGURE 3 is a perspective view of a wafer showing compo¬ nents of the diode of Figure 1 in an intermediate stage of man¬ ufacture; FIGURE 4 is a plan view of the circuit board of Figure 1 prior to mounting the diode; and
FIGURE 5 is a section of a unipolar diode which incorpo¬ rates a second preferred embodiment of this invention.
Turning now to the drawings, Figures 1 and 2 show two views of a bipolar zener diode which incorporates a first _ n _ presently preferred embodiment of this invention. This diode includes first and second semiconductor elements or dies 1 , 2 each of which defines a respective p-n junction as described in greater detail below. The two semiconductor elements 1 , 2 are bonded together in a bonding region 3 adjacent to the p-n junctions. Each of the semiconductor elements 1 , 2 defines a respective outer face 4, 5 a respective inner face 36, 38 and at least one respective base 31 , 32. As shown in the drawings, the outer faces 4, 5 are preferably oriented parallel to one another and transverse to the bases 31 , 32.
The manner in which the diode is mounted in place to a circuit board will be described in greater detail below. Briefly stated, each of the outer faces 4, 5 defines a respective metallized layer, and these metallized layers are positioned to contact and extend transversely away from respective printed circuit contacts 8, 9. Bonding joints 6, 7 formed of a material, such as an appropriate solder or conductive epoxy, electrically and mechanically interconnect the outer faces 4, 5 with the respective printed circuit board contacts 8, 9. Thus, the diode of Figures 1 and 2 is electrically intercon¬ nected to the printed circuit board contacts in an economical manner without the use of wire bonds, clips, or other conven¬ tional lead attachments. Furthermore, unnecessary packaging elements have been eliminated, and it is the passivated semi- conductor elements themselves which are used to connect the diode with the printed circuit board contacts, 8, 9.
Figure 2 is a cross section illustrating in detail the various component elements of the bipolar zener diode of Figure 1. This diode operates bidirectionally to conduct signals above a prede- termined voltage threshold in either direction. If one of the printed circuit board contacts 8 is connected to a signal source such as a pin of a connector, and the other contact 8, 9 is connected to ground, the bidirectional zener diode of Figures 1 and 2 is well suited for use as a transient suppression device which can be made extremely compact in size. As pointed out below, this invention is not limited to use with bipolar devices, but can readily be adapted to unipolar diodes.
As shown in Figures 1 and 2, the illustrated diode is formed of two semiconductor elements 1 , 2. Each of the semi- conductor elements 1 , 2 is formed of a semiconductor material such as silicon, and each defines a respective p-n junction 10, 11 oriervted generally parallel to the outer face 4, 5 of the semiconductor element 1 , 2. These p-n junctions are passivated with thermal oxide SiO- in regions 12, 13 on inner faces 36, 38 and the passivated regions are covered with a fitted borosilicate glass in regions 1 , 15 to assure adequate protection to the p-n junction 10, 11 in the environment in which the diode will be used .
In this embodiment the semiconductor elements 1 , 2 are identical and they can be fabricated in a conventional planar wafer manufacturing process. This process starts with a wafer which will be processed to form a large number of the semicon¬ ductor elements 1 , 2. After the various process steps have been completed, the wafer is cut or diced into the separate semiconductor elements 1 , 2. Because the diode is mounted on its side in final assembly to the printed circuit board, it is advantageous to use a relatively thick wafer in the fabrication process, which wafer is preferably formed of a low resistivity semiconductor substrate. In Figure 2, this substrate is iden- tified by the reference numerals 16 and 17 as an n+ region, which in this embodiment preferably has a resistivity of about 0.01 ohm-cm. By using a low resistivity, highly doped substrate, parasitic resistance is held to a minimum, thereby reducing the dynamic impedance of the resulting zener diode. Of course, it should be understood that diodes in accordance with this invention can also be formed with the reverse dopant species from those shown in Figure 2, i.e. , p+ substrates can be used in conjunction with n type diffused n-p junctions.
The first step in the fabrication of the semiconductor element 1 , 2 is to form an epitaxial deposition layer 18 19 of a resistivity value which will help control the desired zener or avalanche voltage value desired.. In the case of a 20 volt ava¬ lanche breakdown device, the epitaxial layer 18, 19 preferably has a resistivity of approximately 0.03 ohm-cm, and is approxi- 5 ately 24 microns in thickness. The wafer is then thermally oxidized to form a layer of SiO- which in this embodiment has a thicknes's of about 1 micron. A first photolithography step is then performed to etch open a diffusion window. A suitable dopant (such as boron in this example) is then predeposited on 'D- the diffusion window and a diffusion drive-in step is then per¬ formed to drive the p-n junction to a depth of approximately 8 microns in this embodiment. Such a p-n junction has been found suitable for a 20 volt avalanche breakdown diode. The p layer formed in the drive-in step preferably has a sheet resistance of 5 about 22 ohms per square.
The next step in the fabrication process is to backgrind the wafer to obtain the desired final thickness for the semiconductor elements 1 , 2. Then a surface enhancement diffusion or phos¬ phorus getter operation is performed to form a very highly 0 doped region n++ 20, 21 having a sheet resistance of about 2 ohms per square. This very highly doped region 20, 21 pro¬ vides a good ohmic backside contact as explained below. Such an enhancement operation can also be provided by other low temperature doping techniques with selected doped metallizations 5 as part of the backside metallization operation near the end of the overall wafer process.
After the surface enhancement operation, the wafer is -again selectively etched via a photolithography step to provide an ohmic contact window through the thermal oxide which was grown 0 during the diffusion step. The wafer may then be further passivated with an additional layer of borosilicate glass as shown in regions 14 and 15 in Figure 2. If such a glass layer is deposited, then a third selective etch operation is required to provide the final ohmic contact window opening. A layer of 5 palladium is deposited via thin film evaporation techniques in this - 7 - ohmic contact window opening, in the region 22, 23. This thin film of palladium is then sintered to the exposed silicon in the regions 22, 23. Excess palladium is removed from the glass 14, 15 by chemical etching. Thereafter, a relatively thick silver bump contact 24, 25 is galvanically deposited over the palladium. Typically^ each bump contact 24, 25 is approximately 0.001 inch in thickness.
Finally, a backside metallization layer 26, 27 is deposited over the enhanced layer 20, 21 . This metallization layer 26, 27 is selected to provide for suitable solder flow or other con¬ ductive bonding material flow to these surfaces to ensure the formation of adequate fillets 28, 29 extending between the print¬ ed circuit board contacts 8 , 9 and the metallization layers 26 27. The metallization layers 26, 27 can be formed of electro less nickel and gold depositions, or by evaporated layers of chrome followed by silver followed by gold. In addition, other metal¬ lization layers including solder coatings can be used. It is often important that the relative metal thickness of the layer 26, 27 be selected "to promote solder wetting without total dissolution of available metals or eventual dewetting of the metallization layer 26, 27. In this way good bond integrity between the metalliza¬ tion layers 26, 27 and the printed circuit board contacts 8, 9 can be obtained, even when the metallization layers 26, 27 are oriented approximately perpendicularly with respect to the print- ed circuit board contacts 8 , 9. One presently preferred embodi¬ ment for the metallization layers 26 , 27 includes the following layers, starting adjacent to the n++ layer 20 , 21 :
1 . a 700 Angstrom layer of chrome;
2. a 2000 Angstrom layer of a chrome-silver mixture (approximately 1 : 8 by volume with silver constituting the major portion) ;
3. a 2900 Angstrom silver layer; and
4. a 1800 Angstrom gold layer. The chrome layer bonds well to silicon, the silver layer dissolves well in solder, and the gold layer protects the silver layer from oxidation.
Figure 3 shows a portion of the wafer 35 at the completion of the wafer fabrication process. At this stage, the wafer is then sawed or otherwise cut into individual dies or semiconductor elements- 1 , 2. These individual semiconductor elements may be shaped as desired, and configuration such as squares, rectan¬ gles, triangles, pentagons, and hexagons, are all suitable. Regardless of the configuration chosen, each semiconductor element' V, 2 should define at least one base 31 , 32 which is reasonably planar to allow the finally assembled diode to rest on the base 31 , 32.
After the wafer has been cut into individual semiconductor elements T, 2 the bipolar diode is assembled by soldering or affixing with conductive epoxy two of the semiconductor elements 1 , 2 together with a central bond 30. In this embodiment the central bond 30 is a solder of 95 percent lead and 5 percent tin which has a melting point of about 315° C. Preferably a disc of the solder is clamped in place between the contacts 24, 25 , and the assembly is heated to create the desired bond. The solder should be chosed to have a higher melting point than any solder used to mount the diode in place.
The two semiconductor elements 1 , 2 are rotationally aligned one with the other with the planar p-n junctions 10, 11 facing one another. The metallization layers 26 , 27 are oriented paral¬ lel to one another and to the p-n junctions 10, 11 and perpen¬ dicular to the base 31 , 32. With this geometry, the bipolar diode can be mounted with the bases 31 , 32 resting on the respective printed circuit board contacts 8 , 9 and the sensitive p-n junctions 10, 11 situated approximately midway between the printed circuit board contacts 8, 9. In this way, the p-n junctions 10 , 11 are isolated and protected.
The diode of Figures 1 and 2 can be formed in a wide of sizes and with a wide range of electrical characteristics. The following information is provided merely to define one preferred embodiment in greater detail and is of course not intended to be in any way limiting:
A. Dimensions of outer face 4,5: 0.0914 cm by 0.0914 cm;
B. Distance between outer faces 4,5: 0.1143 cm; C. ' Distance between regions 22 ,23: 0.008 cm;
D. Breakdown Voltage: 20 V;
E. Test Current: 1 mA; F. Working Peak Voltage: 15 V;
G. Leakage Current at Working Peak
Voltage: 10 /(A;
H." Maximum Peak Surge Voltage: 40 V;
I . Maximum Peak Surge Current: 20 A; J. Maximum Capacitance: 300 pf;
K. Peak Surge Energy Dissipation: 0.005 Joules (l O^sec) ,
0.05 Joules (a m sec) . The bipolar zener diode of Figures 1 and 2 is mounted to a printed circuit board with fillets 28, 29 of a material such as solder or epoxy which electrically interconnects the metallization layers 26, 27 with respective contacts 8 , 9 of the printed circuit board. One approach to this mounting operation which has been found suitable is described below.
First, a printed circuit board 34 is cleaned and dried in an oven for about 1 hour at 100° C, and a suitable epoxy 33 is then applied to the printed circuit board between the contacts 8, 9. This epoxy 33 is of the type which provides a high electrical resistance after curing . The material marketed by Ablestick Co. of Cardenia, California, as Ablebond 77-2LTC has been found suitable for use as the epoxy 33. The assembled diode is then • placed on the printed circuit board as shown in Figure 2 such that the central solder bond 30 is centered over the insulating epoxy 33 and each of the metallization layers 26, 27 is in elec¬ trical contact with a respective one of the contacts 8 , 9. The printed circuit board with the mounted diode is then placed in an oven to cure the insulating epoxy 33. After curing of the insulating epoxy 33 a solder paste is applied to each of the metallization layers 26, 27. Solder of the type marketed as Alpha brand 60/40 solder with Alpha brand 611 flux ( RMA) has been found suitable. The solder paste is then cured at a tem¬ perature of 80° C for 15 minutes in a suitable oven and then a reflow operation is performed in an infrared oven or a vapor phase soldering machine to form the fillets 28, 29 interconnecting the metallization layers 26, 27 with the respective contacts 8, 9. The solder reflow operation should not subject the central solder bond 30 to elevated temperatures which might weaken the bond. After the solder reflow operation, the printed circuit board is cleaned and tested and a sealing epoxy may optionally be applied to the top of the diode to flow around the central solder bond 30. This sealing epoxy is cured at 150° C for 1 hour and the printed circuit board is again electrically tested. The non- conductive epoxy described above may be used as the sealing epoxy.
In some applications, -it may be preferable to substitute a conductive epoxy for the 60/40 solder paste described above. In this event, the solder reflow operation described above is elim¬ inated and replaced with an oven curing operation suitable for the conductive epoxy used. A suitable conductive epoxy is marketed by Ablestick Co. as Ablebond 84-1 LMIT. One important, advantage of the geometry described above is that the bipolar zener diode can be mounted with any of the sides which extend between the metallization layers 26, 27 serv¬ ing as the base 31 , 32. Thus , careful rotational positioning of the diode is not required. Furthermore, the diode can be turned end-for-end without adversely affecting its electrical performance. In all of these positions, the bonding region 3 is disposed above and away from the printed circuit board contacts 8, 9, thereby reducing the possibility of undesired contact between the solder or conductive epoxy of the fillets 28 , 29 and the p-n junctions 10, 11. Of course, many variations can be made to the bipolar zener diode described above. For example, metal pads of desired thickness may be placed on the metallization layers 26 , 27 to provide heat sinks and increased bonding surface area to the printed circuit board contacts 8, 9. Furthermore, if desired a protective coating in the bonding region 3 can be provided. Such a protective coating may be desirable in specific mounting environments and can be provided , for example, by use of a semiconductor grade varnish , epoxy or polyimide material which can be flowed into the bonding region 3 between the semiconduc¬ tor elements 1 , 2 and then dried at elevated temperatures. Furthermore, as pointed out above, the dopant species may be reversed by starting with a p+ substrate and then doping with a suitable n dopant to form a p-n junction. in addition , this invention can be used to form unipolar diodes. As shown in Figure 5, this can be done simply by eliminating the p-n junction from the semiconductor element 2 to form a simplified semiconductor element 2' . This simplified semiconductor element 2' is quite similar to the semiconductor element 2 except that an n++ enhanced surface is provided in the region 23 , and the epitaxial region 19 is not required. This simplified semiconductor element 2' simply provides a short circuit path from the p-n junction of the semiconductor element 1 to the printed circuit board contact 9. In this way, a unipolar or single p-n junction path between the two circuit board con¬ tacts 8 , 9 is provided. Of course, this unipolar diode can also be fabricated with dopant species which are the reverse of those described above, as can the simplified semiconductor element 2' . In alternative embodiments, the simplified semiconductor element 2* may be replaced with a block metal conductor having a similarly shaped geometry. If the solder bonding and the conductivity properties of this metal block are chosen properly, the same mounting techniques as those described above can be used. From the foregoing , it should be apparent that unipolar and bipolar diodes have been described which allow a remarkably simple, effective and compact surface mounting technique. This invention can be adapted for use with a wide variety of two- terminal semiconductor devices including rectifiers , signal di¬ odes, pin diodes, zener diodes, transient suppression diodes , as well as other types of diodes.
It is therefore intended that the foregoing detailed descrip¬ tion be regarded as illustrative rather than limiting , and that it be understood that it is the following claims, including all equiv¬ alents , which are intended to define the scope of this invention.

Claims

CLAIMS:
1 . A surface mounted diode for mounting on a mounting surface (34) which comprises a pair of spaced contacts (8, 9) , each oriented parallel to a mounting plane, said diode being characterized in that a semiconductor element (1 ) having a base (31 ) and first (4) and second opposed faces (36) extending away from the base, said semiconductor element (1 ) comprising a p-n junction (10) electrically interconnected between the opposed faces (4, 36) and spaced from the base (31 ) , a first exposed conductive layer (26) disposed on to conform to the first opposed face (4) , and means for electrically interconnecting the second opposed face (36) with a second exposed conductive layer (27) arranged generally parallel to the first exposed conductive layer (26) such that the p-n junction (10) is interposed between the two exposed conductive layers (26 , 27) ; each of said conductive layers (26, 27) define a respective exposed conductive surface, said base (31 ) being oriented parallel to the mounting plane such that each of the exposed surfaces of the conductive layers (26 , 27) is in contact with a respective one of the spaced contacts (8, 9) and extends away from the mounting plane; and two masses (28 , 29) of a conductive securing agent, each secured to both a respective one of the contacts (8, 9) and the exposed surface of the associated conductive layer (26, 27) to form a fillet, said securing agent being selected to move onto the exposed surfaces by capillary action when in a fluid state.
2. The invention of claim 1 wherein the interconnecting means comprises an additional p-n junction (11 ) of opposite polarity to the p-n junction of the semiconductor element ( 1 ) .
3. The invention of claim 1 wherein the interconnecting means comprises an interconnecting element (21 ) which corre¬ sponds in shape to the semiconductor element (1 ) .
4. A surface mountable bipolar diode characterized in that a first semiconductor element (1 ) having a first outer face (4) and a first inner face (36) comprises means for forming a first p-n junction (10) therebetween; a second semiconductor element (2) having a second outer face (5) and a second inner face (34) and comprises means for forming a second p-n (11 ) junction therebetween; first means electrically interconnect and mechan¬ ically secure the first and second inner faces together between the outer faces to form an integrated unit which defines a base extending between the outer faces, wherein the first and second p-n (10; 11 ) junctions are oriented with reverse polarity; first and second conductive surfaces (26, 27) are mounted on the first and second outer faces (4,
5) such that the first and - second p-n junctions are positioned between the first and second conductive surfaces (26 , 27) , the conductive surfaces (26, 27) extending away from the base; said conductive surfaces positioned for surface mounting to respective mounting surfaces extending alongside the base. 53.. The invention of claim 1 or 4 wherein the conductive surfaces (26, 27) are oriented parallel to each other and substantially transverse to the base.
6. The invention of claim 5 wherein the base of the integrated unit rests on a mounting surface which defines first and second contacts (8, 9) , each oriented parallel to the base and in contact with a respective one of the conductive surfaces (26, 27) such that the conductive surfaces (26, 27) extend transversely away from the contacts (8, 9) , and wherein first and second fillets (28 , 29) of a conductive securing agent are bonded between the contacts (8, 9) and the respective conductive surfaces (26, 27) .
7. A surface mountable bipolar diode characterized in that first and second semiconductor elements (1 , 2) , each define a respective first face (36, 38) and a respective second face (4, 5) , wherein the first (36, 38) and second faces (4, 5) are oriented parallel to one another; first and second metallized layers (26, 27) , each positioned on a respective one of the second faces (4, 5) said metallized layers comprising conductive surfaces; first and second p-n junctions (10, 11 ) , each posi- tioned and electrically interconnected between the first (36 , 38) and second faces (4, 5) of a respective one of the semiconductor elements (1 , 2) ; and means mechanically secure and electrically interconnect the first and second semiconductor elements (1 , 2) together to hold the second faces (4, 5) in spaced parallel relationship with the first and second p-n junctions (10, 11 ) oriented fn reverse polarity.
8. „ A bipolar diode surface mounted between first and second contact surfaces (8, 9) , each oriented parallel to a mounting plane, characterized in that a first semiconductor element (1 ) comprises first and second semiconductor regions which define a first p-n junction (10) therebetween and a first conductive surface (26) on the first region; a second semiconductor element (2) comprises third and fourth semiconductor regions which define a second p-n junction (11 ) therebetween and a second conductive surface (27) on the third region; first means (30) mechanically secure the first and second semiconductor elements (1 , 2) together to form an integrated unit having a lower surface and at least first and second side surfaces, wherein the first and second conductive surfaces (26, 27) are positioned on respective opposed portions of the side surfaces (4, 5) , and wherein the first means (30) comprises means for electrically interconnecting the second and fourth regions at a location (3) spaced from the lower surface; said lower surface positioned to bridge the contact surfaces (8, 9) , with each of the conductive surfaces (26 , 27) in contact with a respective one of the contact surfaces (8, 9) and angled with respect to the mounting plane; and second means (28, 29) electrically interconnect and physically secure each of the conductive surfaces (26, 27) to the respective contact surface (8 , 9) , said second means (28 , 29) comprising a conductive material which moves across the conductive surfaces (26, 27) by capillary action when in a fluid state.
9. The invention of claim 8 wherein each of the first and third regions defines a respective outer face (4, 5) , wherein the first and second conductive surfaces (26, 27) are positioned on the outer faces (4, 5) of the first and third regions, respective¬ ly, wherein the second and fourth regions are centered on the first and third regions , respectively, and wherein the first means (30) comprises a conductive element secured between the second and fourth regions such that the two second and fourth regions are held in closely spaced, parallel relationship.
10., The invention of claim 9 wherein the conductive ele¬ ment and the second and fourth regions are spaced from the lower surface to prevent the conductive material of the second means (28 , 29) from contacting the conductive element and the second and fourth regions.
PCT/US1987/000894 1986-05-02 1987-04-22 Surface mountable diode WO1987006767A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62503012A JPH0666409B2 (en) 1986-05-02 1987-04-22 Surface mountable diode
DE8787903501T DE3780564T2 (en) 1986-05-02 1987-04-22 SURFACE MOUNTING DIODE.
KR1019870701268A KR960003856B1 (en) 1986-05-02 1987-04-22 Surface mountable diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/859,126 US4709253A (en) 1986-05-02 1986-05-02 Surface mountable diode
US859,126 1986-05-02

Publications (1)

Publication Number Publication Date
WO1987006767A1 true WO1987006767A1 (en) 1987-11-05

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Country Status (6)

Country Link
US (1) US4709253A (en)
EP (1) EP0266412B1 (en)
JP (1) JPH0666409B2 (en)
KR (1) KR960003856B1 (en)
DE (1) DE3780564T2 (en)
WO (1) WO1987006767A1 (en)

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Also Published As

Publication number Publication date
DE3780564T2 (en) 1993-03-11
DE3780564D1 (en) 1992-08-27
KR960003856B1 (en) 1996-03-23
KR880701464A (en) 1988-07-27
US4709253A (en) 1987-11-24
JPH0666409B2 (en) 1994-08-24
EP0266412A1 (en) 1988-05-11
EP0266412B1 (en) 1992-07-22
JPH01500154A (en) 1989-01-19

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