WO1987004862A1 - Demultiplexeur optique - Google Patents

Demultiplexeur optique Download PDF

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Publication number
WO1987004862A1
WO1987004862A1 PCT/GB1987/000061 GB8700061W WO8704862A1 WO 1987004862 A1 WO1987004862 A1 WO 1987004862A1 GB 8700061 W GB8700061 W GB 8700061W WO 8704862 A1 WO8704862 A1 WO 8704862A1
Authority
WO
WIPO (PCT)
Prior art keywords
detector
light
detectors
reflected
schottky barrier
Prior art date
Application number
PCT/GB1987/000061
Other languages
English (en)
Inventor
Craig Sawyers
Allen William Mabbitt
Original Assignee
Pa Consulting Services Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB868602309A external-priority patent/GB8602309D0/en
Application filed by Pa Consulting Services Limited filed Critical Pa Consulting Services Limited
Publication of WO1987004862A1 publication Critical patent/WO1987004862A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type

Definitions

  • This invention concerns optical demultiplexers by which light of one wavelength can be separated from light of another wavelength.
  • optical fibre communication systems In optical fibre communication systems, higher data transmission rates can be achieved by transmitting light signals at two differing wavelengths along the same optical path. Two preferred wavelengths for fibre optic transmission paths are 1.3 um and 1.55 um.
  • a detector which is capable of demultiplexing n light signals each having a different wavelength L1, L2 ?? Ln comprises a first
  • Schottky barrier detector the light receptive surface of which is profiled with a plurality of parallel grooves or ridges so that surface plasmon reson.ance will occur if light is incident therein and (n-1) further Schottky barrier detectors each having a light receptive surface wtiich is profiled in a similar manner to the first; projection means for projecting light containing all n signals onto the light receptive surface of a first of the detectors at an angle of incidence A1, such that surface plasmon resonance, and therefore absorption, will occur in respect of any component having a wavelength L1, all other components being reflected by the surface, and wherein a second one of the detectors is arranged to receive any light reflected by the first detector surface at an angle of incidence A2 such that surface plasmon resonance (and therfore absorption) will occur at the second detector in respect of any component having a wavelength L2, all other components being reflected by the surface, and each of the (n-2) remaining detectors is arranged to receive light
  • the condition for establishing surface plasmon resonance is related to the groove pitch A g , the light wavelength A j and the angle of incidence ⁇ by the equation (to first order) :- T
  • Em is the (complex) dielectric constant of the metal.
  • Em is nearly real, negative, and has modules much larger than unity (eg. silver, Em ⁇ 40 in the visible range).
  • the quantity (Em/Em+1)1/2 is very close to unity. Generally, therefore:-
  • two detectors are provided, one receptive of the light signal at an angle of incidence A1 such that any L1 component sets up surface plasmon resonance in the first detector surface and is therefore absorbed and detected, whilst all other wavelengths (including L2) are reflected, and a second detector positioned relative to the first so as to receive any light reflected from the first detector at an angle of incidence A2, such that any component of wavelength L2 is absorbed (and therefore detected) by the second detector.
  • Figure 1 is an enlarged cross section through a Schottky barrier detector having a profiled surface as required by the invention
  • Figure 2 illustrates graphically the variation of reflected energy with wavelength, for a given angle of incidence
  • Figure 3 illustrates diagramatically how two detectors can be arranged to provide for demultiplexing two signals L1 and L2.
  • a Schottky barrier detector is shown in part as being formed from n-type silicon (layer 10), and a thin metal layer 12, forming a receiving and reflecting surface 14.
  • the silicon is profiled so as to define a plurality of parallel grooves 16, 18 etc. separated by ridges 20, 22 etc..
  • a light beam 24 is shown incident on the surface 24 at an angle A. If the wavelength of the light in the beam 24 is varied in the range of wavelengths LA to LB then for a given spacing and depth of the grooves 16, 18 etc, a response curve of reflected energy against wavelength will be obtained as is shown in Figure 2. Here reflected power R is plotted against wavelength and it will be seen that at one particular wavelength, LF, the reflected energy is substantially zero. It is at this wavelength that surface plasmon resonance occurs, resulting in virtually 100% absorption of the light of that wavelength.
  • a similar response curve is obtained if, instead of varying wavelength, light of constant wavelength is projected onto a profiled surface at differing angles of incidence.
  • this fact is utilised to advantage in that the angle of incidence A1 is selected so that resonance (and therefore absorption) occurs at wavelength L1 at detector 26 leaving predominately L2 components to pass to detector 28. This is angled relative to 26 so that the angle of incidence A2 is such that resonance and absorption occur at wavelength L2 at the second detector.
  • the electrical output from detector 36 will thus be proportional to the L1 wavelength component and that from 28 will be proportional to the L2 wavelength component, in the input light beam 30.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

Détecteur, permettant de démultiplexer des signaux lumineux contenant des composantes (L1, L2) de longueurs d'ondes différentes, dans lequel plusieurs détecteurs de barrière Schottky (26, 28) ayant des surfaces à rainures parallèles reçoivent la lumière avec des angles d'incidence (A1, A2) tels que les composantes (L1) sont absorbées par une résonance de plasmon au niveau du détecteur de barrière Schottky (26) et les composantes (L2) sont absorbées de la même manière au niveau du détecteur de barrière Schottky (28).
PCT/GB1987/000061 1986-01-30 1987-01-29 Demultiplexeur optique WO1987004862A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB8602309 1986-01-30
GB868602309A GB8602309D0 (en) 1986-01-30 1986-01-30 Optical memultiplexer
GB08700322A GB2186144A (en) 1986-01-30 1987-01-08 Optical demultiplexer
GB8700322 1987-01-08

Publications (1)

Publication Number Publication Date
WO1987004862A1 true WO1987004862A1 (fr) 1987-08-13

Family

ID=26290297

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1987/000061 WO1987004862A1 (fr) 1986-01-30 1987-01-29 Demultiplexeur optique

Country Status (2)

Country Link
EP (1) EP0256075A1 (fr)
WO (1) WO1987004862A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1089932A (fr) * 1977-12-05 1980-11-18 Norman Toms Multiplexeur par repartition de longueurs d'ondes/demultiplexeur dans des systemes de communication par fibres optiques
GB2131229A (en) * 1982-11-30 1984-06-13 Western Electric Co Photodetector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1089932A (fr) * 1977-12-05 1980-11-18 Norman Toms Multiplexeur par repartition de longueurs d'ondes/demultiplexeur dans des systemes de communication par fibres optiques
GB2131229A (en) * 1982-11-30 1984-06-13 Western Electric Co Photodetector

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letters, Volume 46, No. 10, 15 May 1985, (Woodbury, N.Y., US), S.R.J. BRUECK et al.: "Enhanced Quantum Efficiency Internal Photoemission Detectors by Grating Coupling to Surface Plasma Waves", pages 915-917 see the whole document *
Solid-State Electronics, Volume 27, No. 10, October 1984, (Elmsford, N.J., US), S.C. LEE et al.: "An AlGaAs-GaAs Dual-Wavelength Photodetector with 500 A Resolution", see pages 917-919 *

Also Published As

Publication number Publication date
EP0256075A1 (fr) 1988-02-24

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