WO1986003885A1 - Procede ameliorant l'adherence du teflon utilise dans des cellules solaires spatiales avancees et dans des dispositifs et des circuits a semiconducteurs encapsules - Google Patents

Procede ameliorant l'adherence du teflon utilise dans des cellules solaires spatiales avancees et dans des dispositifs et des circuits a semiconducteurs encapsules Download PDF

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Publication number
WO1986003885A1
WO1986003885A1 PCT/US1985/002307 US8502307W WO8603885A1 WO 1986003885 A1 WO1986003885 A1 WO 1986003885A1 US 8502307 W US8502307 W US 8502307W WO 8603885 A1 WO8603885 A1 WO 8603885A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
solar cell
teflon
bonding
fep
Prior art date
Application number
PCT/US1985/002307
Other languages
English (en)
Inventor
George J. Vendura, Jr.
Original Assignee
Hughes Aircraft Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Company filed Critical Hughes Aircraft Company
Publication of WO1986003885A1 publication Critical patent/WO1986003885A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/18—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using heated tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/112—Single lapped joints
    • B29C66/1122—Single lap to lap joints, i.e. overlap joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/40—General aspects of joining substantially flat articles, e.g. plates, sheets or web-like materials; Making flat seams in tubular or hollow articles; Joining single elements to substantially flat surfaces
    • B29C66/41—Joining substantially flat articles ; Making flat seams in tubular or hollow articles
    • B29C66/45—Joining of substantially the whole surface of the articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/71—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the composition of the plastics material of the parts to be joined
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B64—AIRCRAFT; AVIATION; COSMONAUTICS
    • B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
    • B64G1/00—Cosmonautic vehicles
    • B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
    • B64G1/42—Arrangements or adaptations of power supply systems
    • B64G1/44—Arrangements or adaptations of power supply systems using radiation, e.g. deployable solar arrays
    • B64G1/443—Photovoltaic cell arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2027/00—Use of polyvinylhalogenides or derivatives thereof as moulding material
    • B29K2027/12—Use of polyvinylhalogenides or derivatives thereof as moulding material containing fluorine
    • B29K2027/18—PTFE, i.e. polytetrafluorethene, e.g. ePTFE, i.e. expanded polytetrafluorethene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates generally to the manufacture of solar cells suitable for space appli ⁇ cations, and more particularly to a process for improving the adhesion between these cells and protective layers therefor.
  • Patents 3,912,540 and 3,996,067 issued to Jacob D. Broder. While the latter approach using FEP TEFLON did indeed overcome many of the disadvantages associated with cost and transmission quality of the "DC 93500" epoxy material, under certain space and terrestrial conditions it did not provide satisfactory adhesion in the cover glass-TEFLON-solar cell sandwich structure, and in fact the TEFLON has been known to separate from the solar cell in previous spacecraft applications. This separation has resulted in critical power losses, and, in some cases, could result in a total failure of spacecraft mission. Thus, the ability to adequately shield the solar cell from radiation damage by permanently and securely bonding the FEP TEFLON to the solar cell and enabling the solar cell-TEFLON-cover glass sandwich structure to hold together under worst case environmental conditions is extremely important.
  • a substantially enhanced and strengthened bond between the solar cell (or an anti- reflective (AR) coating thereon) and the FEP TEFLON may be achieved by initially plasma etching a major surface or surfaces of the TEFLON substrate using a chosen ion species, such as ionized oxygen. These ion species thus become available to chemically or otherwise react with the atomic surface layers of the TEFLON surface as well as that of silicon solar cell, or its anti- reflective coating, in such a way as to strengthen the mutual adherence between the abutting bonding surfaces of the solar cell and the FEP TEFLON substrate. These mutually abutting and bonded surfaces are brought together under preselected conditions of temperature, pressure and time to create a secure and permanent bond between these surfaces.
  • a chosen ion species such as ionized oxygen.
  • FIG. la is a schematic process flow diagram wherein a single plasma etch operation is performed on the FEP TEFLON prior to thermal compression bonding.
  • FIG. lb, c and d are isometric views showing the bonding of the FEP TEFLON to the solar cell as a completed structure (FIG. lc) or an alternative embodiment of adding a cover glass to the top surface of the TEFLON bonded structure as shown in FIG. Id.
  • FIG. 2a is a process flow diagram wherein plasma etching of all of the cover glass, FEP, and solar cell components is carried out prior to thermal compression bonding to form the composite and protected solar cell structure.
  • FIG. 2b and c are isometric views showing the plasma etching of the four mutually abutting and bonding surfaces of the composite protected solar cell structure.
  • the FEP TEFLON substrate is provided at station 10 and is also identified as material "A" , since the A-type materials listed in Table I below are alternative or substitute materials for the FEP TEFLON in other and different bonding applications.
  • materials designated as "B" material at stations 12 and 14 in FIG. la indicate alternatives to the cover glass and solar cell components respectively for different bonding applications.
  • the plasma etching treatment is only to the lower, downwardly facing surface of the FEP TEFLON layer 20, as indicated by arrows 22.
  • the solar cell component is designated generally as 24 and has an antireflective (AR) coating 26 thereon to improve the absorbency of beneficial radiation by the solar cell 24, as is well- known in the art.
  • AR antireflective
  • the complete and protected structure may consist of only the solar cell 24 and FEP TEFLON layer 20, as indicated in FIG.
  • the complete composite structure may further include a top protective cover glass layer 28, as indicated in FIG. Id.
  • the AR coating will preferably be a layered combination of tantalum pentoxide Ta2 ⁇ 5 and sapphire, AI2O3, and the cover glass 20 will be either a polished or as-cut quartz sheet.
  • FIG. 2a wherein like reference numerals correspond to like stations in FIG. la, there have been added additional plasma etching steps at stations 30 and 32 so as to provide plasma etching of all mutually abutting bonding surfaces which face each other as indicated isometrically in FIG. 2b.
  • both upper and lower surfaces of the FEP TEFLON substrate 10 are plasma etched as well as the facing surfaces of the cover glass material 12 and the silicon solar cell 24.
  • 2c shows the completed composite solar cell-TEFLON-cover glass structure after these layers have been thermal compression bonded in a bonding press operated at a predetermined temperature, pressure and time as described in more detail in the following example.
  • a type K4-3/4 single crystal silicon solar cell having two antireflection (AR) coatings thereon was prepared by first boiling in reagent grade alcohol for approximately 10 minutes, then submerging in a liquid primer solution for 10 minutes to condition the upper AR coating of the cell for better adhesion, and then rinsing in reagent alcohol for 10 seconds.
  • the solar cell was obtained from Spectrolab, Inc. of Sylmar, California, and the primer was the type "A-1100" made by the Union Carbide Company of Danbury,. Connecticut.
  • the silicon solar cell's antireflection coatings consisted of a layer of a2 ⁇ 5 immediately upon the silicon surface followed by a second, outer layer of A1 2 0 3 .
  • a prepolished or as-cut quartz cover glass was cleaned by first placing it in a light etchant consisting of about 100 parts deionized water and 1 part HC1. Then, the same treatment as indicated above for the solar cell was carried out on this component by boiling, priming and rinsing the cover glass in the manner described above.
  • the next step in the process included cleaning the FEP TEFLON substrate by boiling in reagent alcohol for 10 minutes. No further priming and rinsing were required as with the solar cell and cover glass. Then, the FEP TEFLON substrate- was transferred to the chamber of a plasma etch machine wherein one surface of the TEFLON substrate was bombarded with oxygen ions for approximately 7.5 minutes. In this chamber, the FEP TEFLON substrate was treated in an atmosphere of oxygen gas ionized between charged parallel plates operating at about 200 watts of power. A gas flow rate of 30 milliliters per minute was used, and the plasma etch chamber was operated at a pressure of aproximately 800 milliTorr.
  • the FEP TEFLON substrate was removed from the plasma etcher and inserted between the treated cover glass and the treated silicon solar cell in a thermal compres ⁇ sion bonding press for about 4 minutes.
  • This thermal compression bonding press consisting of heated parallel plates with major surfaces conforming to the surfaces of the composite glass-FEP-solar cell structure. This structure was exposed to 20 psi pressure and gradually heated from room temperature to approximately 360°C over a period of 3.25 minutes, and thereafter cooled, using liquid nitrogen, down to approximately 150°C over a period of 45 seconds.
  • the composite bonded structure was then removed from the thermal compression bonder and subsequently transferred to an adhesive wedge-type test station wherein a sharp, razor edge separation tool was used to attempt to separate the quartz cover glass from the silicon solar cell.
  • a sharp, razor edge separation tool was used to attempt to separate the quartz cover glass from the silicon solar cell.
  • the present invention compared to prior art provides a substantial improvement in the mechanical, optical and electrical properties of the composite structures described. Life testing has established the fact that the enhanced adhesion between bonded layers prevents mechanical degradation and failure which were observed in the above prior art cells similarly tested or used in space applications. Secondly, the enhanced adhesion provided by the present invention prevents delamination regions from forming at the TEFLON-solar cell interface which when observed in the prior art degrade the optical transmission quality of the composite structure and make it partially opaque. Thirdly, the improved mecha- nical and optical properties of the present composite structure tend to insure that its electrical performance will be optimum and longer lived.
  • the composite structures of the present invention were compared to prior art type composite structures, they demonstrated improved resistance to ultraviolet radiation, electron radiation, temperature cycling, and high temperature humidity, and they also exhibited improved solderability and weldability, Obviously, the present invention is not limited to the bonding of plasma etched TEFLON to cover glasses and solar cells and may be used to bond the equivalent materials "A" and "B" as previously indicated in FIGS, la and 2a above and set forth in the TABLE below.
  • polymers which respond to plasma etching in the manner of FEP TEFLON herein and which are otherwise suitable for a composite structure bonding application may be substituted for this specific polymer material within the scope of the present invention.
  • TEFLON or other suitable polymers for protective encapsulants for semiconductor devices, integrated circuits, metals, AR coatings, glasses, insulators and a variety of other thin film structures.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Remote Sensing (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Procédé de collage de TEFLON FEP (10) sur une cellule solaire (14), ou d'un revêtement antiréfléchissant, consistant à attaquer au plasma (16) la surface d'adhérence d'un substrat de TEFLON, pour préparer la surface à l'aide de différents mécanismes. Ce procédé améliore l'adhésivité et la qualité de la liaison formée par la suite entre le TEFLON et la cellule solaire. Ces composants sont ensuite soudés par thermocompression lors de la deuxième étape du procédé, la durée, la température et la pression de l'opération étant fixées d'avance.
PCT/US1985/002307 1984-12-24 1985-11-25 Procede ameliorant l'adherence du teflon utilise dans des cellules solaires spatiales avancees et dans des dispositifs et des circuits a semiconducteurs encapsules WO1986003885A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68527384A 1984-12-24 1984-12-24
US685,273 1991-04-15

Publications (1)

Publication Number Publication Date
WO1986003885A1 true WO1986003885A1 (fr) 1986-07-03

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2939240A1 (fr) * 2008-12-03 2010-06-04 Saint Gobain Element en couches et dispositif photovoltaique comprenant un tel element
EP2320479A1 (fr) * 2009-11-04 2011-05-11 Sika Technology AG Scellement de bord de modules photovoltaïques
JP2015082659A (ja) * 2013-10-21 2015-04-27 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ シリコン太陽電池のモジュールレベル処理
US11563403B2 (en) * 2017-12-11 2023-01-24 AGC Inc. Coating material, cover glass, solar cell module and outer wall material for building

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780424A (en) * 1970-10-26 1973-12-25 Nasa Method of making silicon solar cell array
US3912540A (en) * 1971-06-21 1975-10-14 Nasa Covered silicon solar cells and method of manufacture
US3996067A (en) * 1975-12-30 1976-12-07 The United States Of America As Represented By The National Aeronautics And Space Administration Silicon nitride coated, plastic covered solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780424A (en) * 1970-10-26 1973-12-25 Nasa Method of making silicon solar cell array
US3912540A (en) * 1971-06-21 1975-10-14 Nasa Covered silicon solar cells and method of manufacture
US3996067A (en) * 1975-12-30 1976-12-07 The United States Of America As Represented By The National Aeronautics And Space Administration Silicon nitride coated, plastic covered solar cell

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2939240A1 (fr) * 2008-12-03 2010-06-04 Saint Gobain Element en couches et dispositif photovoltaique comprenant un tel element
WO2010063974A1 (fr) * 2008-12-03 2010-06-10 Saint-Gobain Glass France Element en couches et dispositif photovoltaique comprenant un tel element
US9196772B2 (en) 2008-12-03 2015-11-24 Saint-Gobain Glass France Layered element and photovoltaic device comprising such an element
EP2320479A1 (fr) * 2009-11-04 2011-05-11 Sika Technology AG Scellement de bord de modules photovoltaïques
WO2011054821A1 (fr) * 2009-11-04 2011-05-12 Sika Technology Ag Scellement, en bordure, de modules photovoltaïques
CN102598304A (zh) * 2009-11-04 2012-07-18 Sika技术股份公司 光伏模块边缘的密封
JP2015082659A (ja) * 2013-10-21 2015-04-27 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ シリコン太陽電池のモジュールレベル処理
US11563403B2 (en) * 2017-12-11 2023-01-24 AGC Inc. Coating material, cover glass, solar cell module and outer wall material for building

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