WO1979000817A1 - Semiconductor device comprising at least two semiconductor elements - Google Patents

Semiconductor device comprising at least two semiconductor elements Download PDF

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Publication number
WO1979000817A1
WO1979000817A1 PCT/DE1979/000020 DE7900020W WO7900817A1 WO 1979000817 A1 WO1979000817 A1 WO 1979000817A1 DE 7900020 W DE7900020 W DE 7900020W WO 7900817 A1 WO7900817 A1 WO 7900817A1
Authority
WO
WIPO (PCT)
Prior art keywords
connection
connections
semiconductor
auxiliary cathode
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE1979/000020
Other languages
German (de)
English (en)
French (fr)
Inventor
K Reiter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Germany
Original Assignee
BBC Brown Boveri AG Germany
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Germany filed Critical BBC Brown Boveri AG Germany
Publication of WO1979000817A1 publication Critical patent/WO1979000817A1/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations

Definitions

  • the invention relates to a semiconductor arrangement with at least two semiconductor elements, at least one of which is controllable, in the form of semiconductor tablets provided with electrodes, insulated or passivated on the edge side, which are electrically connected to one another and arranged in a common housing, wherein two main connections as anode and cathode connections and, when the semiconductor elements are connected in series, a further main connection as center tap and the control connections are led out of the housing on one side.
  • controllable and non-controllable semiconductor components i.e. Thyristors 5 and diodes can be combined in a housing to form a so-called module.
  • the two semiconductor elements are arranged in parallel, antiparallel or in series.
  • two main connections are used, for example as anode and cathode
  • connection led out of the housing.
  • a third main connection is provided as a center tap.
  • the main connections are in a row and the center tap is spatially arranged at the end of this row.
  • This arrangement has the advantage that e.g. when using two modules, each with two semiconductor elements connected in series to build a full-wave rectifier bridge, the center taps for the connection of the AC lines are easily accessible.
  • the internal structure of these semiconductor devices is known for example from DE-GM 75 12 573 and DE-OS 23 37 694.
  • OMPI Wire cross-sections and also have different connection technologies, problems and additional costs arise when using such arrangements.
  • the connections Gl and G2 are either 2.8 mm x 0.8 mm Faston connectors or circular connectors.
  • the object of the invention is to improve the arrangement described at the outset such that the connection of the ignition lines for supplying the ignition pulses to the controllable semiconductor elements is facilitated.
  • auxiliary cathode connections of the controllable semiconductor elements are led out of the housing as separate connections and that each of these auxiliary cathode connections and the control connection belonging to the same semiconductor element are adjacent, but relatively far from the nearest main connection, relative to their mutual distance is arranged.
  • a control connection and an associated auxiliary cathode connection are preferably combined in a common socket.
  • control connections and the associated auxiliary cathode connections can either be combined in a single, multi-pole socket or in several, two-pole sockets.
  • Fig. 4 shows a side view of a semiconductor arrangement according to the invention with two thyristors
  • FIG. 5 shows a section through the arrangement of FIG. 4 along the line V - V;
  • Fig. 6 shows e 'ine plan view of the arrangement of Fig. 4;
  • FIG. 7 shows an electrical equivalent circuit diagram of the arrangement according to FIG. 4.
  • FIGS. ⁇ to 3 contains two thyristors connected in series in a common housing 11.
  • a connection plate 10 On the top of the housing there is a connection plate 10, on which (from the left) a center tap A1K2, a cathode connection Kl and an anode lead A2 is arranged.
  • anode connection In addition to the anode connection
  • one of the two ignition pulse lines with the plug connection for the control electrodes Gl, G2, the other line must additionally be clamped to the associated cathode connection Kl, A1K2.
  • Mounting holes 12 are provided for fastening the semiconductor arrangement to a base body or heat sink. Best way to carry out the invention '
  • auxiliary cathode connections HK1 and HK2 are additionally provided directly next to the associated control connections G1 and G2.
  • One control connection Gl, G2 and one auxiliary cathode connection HKT, HK2.- are located as pins in a socket 13 located in the connection plate 10 made of plastic, penetrating the bottom. '14 of the socket 13 and are connected to elements inside the housing through internal non-illustrated connecting lines with the Halbleiterele ⁇ .
  • the ignition pulses are supplied via a double wire line (not shown) connected to a plug.
  • the outer shape of the plug corresponds to the shape of the socket.
  • controllable semiconductor element is arranged in a housing
  • more than one socket is also provided.
  • a multi-pole socket can optionally be provided.
  • FIG. 7 shows the schematic internal structure of the semiconductor arrangement according to the invention.
  • two thyri interference Thl, Th2 are connected in series.
  • there are three main connections namely an anode connection A2 for the thyristor Th2, a cathode connection Kl for the thyristor Thl and a center tap A1K2 for the connection point between the two thyristors Thl, Th2.
  • the cathodes of the two thyristors Thl and Th2 are additionally led out as auxiliary cathode connections and combined with the control connections in sockets 13.
  • the semiconductor device according to the invention can be used as a module for the construction of converter circuits.

Landscapes

  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
PCT/DE1979/000020 1978-03-23 1979-03-06 Semiconductor device comprising at least two semiconductor elements Ceased WO1979000817A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE7808801 1978-03-23
DE7808801 1978-03-23

Publications (1)

Publication Number Publication Date
WO1979000817A1 true WO1979000817A1 (en) 1979-10-18

Family

ID=6689802

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1979/000020 Ceased WO1979000817A1 (en) 1978-03-23 1979-03-06 Semiconductor device comprising at least two semiconductor elements

Country Status (6)

Country Link
US (1) US4335392A (https=)
EP (1) EP0020336A1 (https=)
JP (1) JPS55500163A (https=)
GB (1) GB2036429B (https=)
NL (1) NL7902282A (https=)
WO (1) WO1979000817A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111659A1 (de) * 1982-11-10 1984-06-27 BROWN, BOVERI & CIE Aktiengesellschaft Leistungstransistor-Modul
US4634891A (en) * 1983-03-22 1987-01-06 Mitsubishi Denki Kabushiki Kaisha Gate turn-off thyristor module
EP0576182A1 (en) * 1992-06-26 1993-12-29 Fuji Electric Co. Ltd. A semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3245762A1 (de) * 1982-03-13 1983-09-22 Brown, Boveri & Cie Ag, 6800 Mannheim Halbleiterbauelement in modulbauweise
JP2764589B2 (ja) * 1988-11-21 1998-06-11 日本特殊陶業株式会社 ベアリング用窒化珪素基焼結体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2079196A1 (https=) * 1970-02-02 1971-11-12 Gen Electric

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3371227A (en) * 1963-10-18 1968-02-27 Gen Electric Transistor-s.c.r. circuitry providing a thyratron equivalent
US3699406A (en) * 1963-12-26 1972-10-17 Gen Electric Semiconductor gate-controlled pnpn switch
SE218763C1 (https=) * 1965-12-30 1968-02-13
US3447057A (en) * 1966-07-14 1969-05-27 Cutler Hammer Inc Solid state power controller for a.c. load devices
SE335389B (https=) * 1966-10-25 1971-05-24 Asea Ab
US3539875A (en) * 1968-09-25 1970-11-10 Philips Corp Hardware envelope with semiconductor mounting arrangements
US3975758A (en) * 1975-05-27 1976-08-17 Westinghouse Electric Corporation Gate assist turn-off, amplifying gate thyristor and a package assembly therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2079196A1 (https=) * 1970-02-02 1971-11-12 Gen Electric

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Electronics Weekly, veroffentlich am 11. Juni 1975, No. 769, London, R.J. BASSETT, "Advanced SCR for chopper control", Seite 15, siehe Figur, Seite 15. *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111659A1 (de) * 1982-11-10 1984-06-27 BROWN, BOVERI & CIE Aktiengesellschaft Leistungstransistor-Modul
US4634891A (en) * 1983-03-22 1987-01-06 Mitsubishi Denki Kabushiki Kaisha Gate turn-off thyristor module
EP0576182A1 (en) * 1992-06-26 1993-12-29 Fuji Electric Co. Ltd. A semiconductor device
US5430326A (en) * 1992-06-26 1995-07-04 Fuji Electric Co., Ltd. Semiconductor device for mounting on a printed wiring board

Also Published As

Publication number Publication date
JPS55500163A (https=) 1980-03-27
US4335392A (en) 1982-06-15
GB2036429A (en) 1980-06-25
GB2036429B (en) 1982-09-15
NL7902282A (nl) 1979-09-25
EP0020336A1 (de) 1981-01-07

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