UST954008I4 - Narrow channel field effect transistor - Google Patents

Narrow channel field effect transistor Download PDF

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Publication number
UST954008I4
UST954008I4 US05/647,251 US64725176A UST954008I4 US T954008 I4 UST954008 I4 US T954008I4 US 64725176 A US64725176 A US 64725176A US T954008 I4 UST954008 I4 US T954008I4
Authority
US
United States
Prior art keywords
field effect
threshold voltage
channel width
channel
narrow channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US05/647,251
Inventor
Utz G. Baitinger
Otto G. Folberth
Werner O. Haug
Karl E. Kroell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732338388 external-priority patent/DE2338388C2/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US05/647,251 priority Critical patent/UST954008I4/en
Application granted granted Critical
Publication of UST954008I4 publication Critical patent/UST954008I4/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

a field effect transistor having a channel width of such small dimension that threshold voltage becomes inversely related to channel width allowing the fabrication of field effect transistors of differing threshold voltages while using the same process steps. Reduced threshold voltage due to prior art "short channel length" effect may be offset by the presently disclosed narrow channel width effect. Desired chanel impedance values are achieved independently of threshold voltage influence due to narrow channel width effect by the provision of parallel-connected field effect transistors of the same channel length whose total channel widths yield a desired net width-to-length ratio.
US05/647,251 1973-07-28 1976-01-07 Narrow channel field effect transistor Pending UST954008I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/647,251 UST954008I4 (en) 1973-07-28 1976-01-07 Narrow channel field effect transistor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19732338388 DE2338388C2 (en) 1973-07-28 1973-07-28 Field effect semiconductor device
DT2338388 1973-07-28
US48101674A 1974-06-20 1974-06-20
US05/647,251 UST954008I4 (en) 1973-07-28 1976-01-07 Narrow channel field effect transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US48101674A Continuation 1973-07-28 1974-06-20

Publications (1)

Publication Number Publication Date
UST954008I4 true UST954008I4 (en) 1977-01-04

Family

ID=27185422

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/647,251 Pending UST954008I4 (en) 1973-07-28 1976-01-07 Narrow channel field effect transistor

Country Status (1)

Country Link
US (1) UST954008I4 (en)

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