USRE50924E1 - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

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Publication number
USRE50924E1
USRE50924E1 US18/239,645 US201418239645A USRE50924E US RE50924 E1 USRE50924 E1 US RE50924E1 US 201418239645 A US201418239645 A US 201418239645A US RE50924 E USRE50924 E US RE50924E
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United States
Prior art keywords
gate
pixel
conductivity type
extra
doping
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US18/239,645
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English (en)
Inventor
Artto Aurola
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Individual
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Individual
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Priority to US18/239,645 priority Critical patent/USRE50924E1/en
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Publication of USRE50924E1 publication Critical patent/USRE50924E1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Light Receiving Elements (AREA)
US18/239,645 2013-11-04 2014-11-04 Semiconductor radiation detector Active 2035-09-16 USRE50924E1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US18/239,645 USRE50924E1 (en) 2013-11-04 2014-11-04 Semiconductor radiation detector

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
FI20130320 2013-11-04
FI20130320 2013-11-04
FI20136170 2013-11-22
FI20136170 2013-11-22
PCT/FI2014/050826 WO2015063375A2 (en) 2013-11-04 2014-11-04 Improved semiconductor radiation detector
US15/033,743 US10079325B2 (en) 2013-11-04 2014-11-04 Semiconductor radiation detector
US18/239,645 USRE50924E1 (en) 2013-11-04 2014-11-04 Semiconductor radiation detector
US202017022935A 2020-09-16 2020-09-16

Publications (1)

Publication Number Publication Date
USRE50924E1 true USRE50924E1 (en) 2026-06-16

Family

ID=52014132

Family Applications (3)

Application Number Title Priority Date Filing Date
US18/239,645 Active 2035-09-16 USRE50924E1 (en) 2013-11-04 2014-11-04 Semiconductor radiation detector
US15/033,743 Ceased US10079325B2 (en) 2013-11-04 2014-11-04 Semiconductor radiation detector
US17/022,935 Active 2035-09-16 USRE49704E1 (en) 2013-11-04 2014-11-04 Semiconductor radiation detector

Family Applications After (2)

Application Number Title Priority Date Filing Date
US15/033,743 Ceased US10079325B2 (en) 2013-11-04 2014-11-04 Semiconductor radiation detector
US17/022,935 Active 2035-09-16 USRE49704E1 (en) 2013-11-04 2014-11-04 Semiconductor radiation detector

Country Status (5)

Country Link
US (3) USRE50924E1 (enExample)
EP (2) EP3066689B1 (enExample)
JP (4) JP6625995B2 (enExample)
CN (1) CN105849908B (enExample)
WO (1) WO2015063375A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11251217B2 (en) * 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays
DE102019206494A1 (de) * 2019-05-06 2020-11-12 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. DEPFET-Transistor und Verfahren zur Herstellung eines DEPFET- Transistors
CN113994482A (zh) 2019-07-12 2022-01-28 索尼半导体解决方案公司 光电探测器
JPWO2021009978A1 (enExample) 2019-07-12 2021-01-21
FR3105409B1 (fr) * 2019-12-19 2021-12-17 Commissariat Energie Atomique Composant de détection de rayonnement électromagnétique à haute sensibilité et procédé de fabrication d’un tel composant
CN111403428B (zh) * 2020-03-23 2025-03-28 佛山眼图科技有限公司 光电传感器、可随机读取有源像素电路、图像传感器和相机装置
US11735677B2 (en) 2020-07-20 2023-08-22 ActLight SA Photodetectors and photodetector arrays
CN112582439B (zh) * 2020-12-29 2022-07-05 上海集成电路装备材料产业创新中心有限公司 背照式图像传感器及制备方法
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
US12598374B2 (en) 2023-09-27 2026-04-07 ActLight SA Techniques for minimizing power consumption in photodetector measurements

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US20030223053A1 (en) 2000-12-11 2003-12-04 Xingiao Liu Methods and devices for charge management for three-dimensional and color sensing
JP2004274009A (ja) 2003-03-06 2004-09-30 Takeshi Aoki パンチスルー現象の発生を抑制する、二段式ゲート電極を有するｍｏｓｆｅｔ
JP2007103578A (ja) 2005-10-03 2007-04-19 Canon Inc 光電変換装置及び放射線検出装置
WO2007077286A1 (en) 2006-01-05 2007-07-12 Artto Aurola Semiconductor radiation detector detecting visible light
US20070176213A1 (en) 2006-01-31 2007-08-02 Sanyo Electric Co., Ltd. Imaging device
CN101015063A (zh) 2004-08-20 2007-08-08 阿尔托·奥罗拉 具有改进的内部栅极结构的半导体辐射检测器
JP2008511132A (ja) 2004-08-20 2008-04-10 アウロラ、アルット 改変内部ゲート構造を用いた半導体放射線検出器
US20090001435A1 (en) 2006-01-05 2009-01-01 Artto Aurola Visible Light Detecting Semiconductor Radiation Detector
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JP2011004370A (ja) 2009-06-22 2011-01-06 Sony Corp 固体撮像装置およびカメラ
JP2012190951A (ja) 2011-03-10 2012-10-04 Sony Corp 固体撮像装置およびカメラ
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Patent Citations (25)

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Publication number Priority date Publication date Assignee Title
US20010054723A1 (en) * 2000-03-17 2001-12-27 Tadashi Narui Image sensor, method of fabricating the same, and exposure apparatus, measuring device, alignment device, and aberration measuring device using the image sensor
US20030223053A1 (en) 2000-12-11 2003-12-04 Xingiao Liu Methods and devices for charge management for three-dimensional and color sensing
JP2004274009A (ja) 2003-03-06 2004-09-30 Takeshi Aoki パンチスルー現象の発生を抑制する、二段式ゲート電極を有するｍｏｓｆｅｔ
US7816653B2 (en) 2004-08-20 2010-10-19 Artto Aurola Semiconductor radiation detector with a modified internal gate structure
US20100133441A1 (en) * 2004-08-20 2010-06-03 Artto Aurola Semiconductor Radiation Detector With a Modified Internal Gate Structure
CN101015063A (zh) 2004-08-20 2007-08-08 阿尔托·奥罗拉 具有改进的内部栅极结构的半导体辐射检测器
JP2008511132A (ja) 2004-08-20 2008-04-10 アウロラ、アルット 改変内部ゲート構造を用いた半導体放射線検出器
US20090134396A1 (en) 2005-08-30 2009-05-28 National University Corporation Shizuoka Univ. Semiconductor range-finding element and solid-state imaging device
JP2007103578A (ja) 2005-10-03 2007-04-19 Canon Inc 光電変換装置及び放射線検出装置
CN101356654A (zh) 2006-01-05 2009-01-28 阿尔托·奥罗拉 为检测可见光而优化的半导体辐射探测器
US20090001435A1 (en) 2006-01-05 2009-01-01 Artto Aurola Visible Light Detecting Semiconductor Radiation Detector
CN101356646A (zh) 2006-01-05 2009-01-28 阿尔托·奥罗拉 可见光检测半导体辐射检测器
US20080315265A1 (en) 2006-01-05 2008-12-25 Artto Aurola Semiconductor Radiation Detector Optimized for Detecting Visible Light
JP2009522821A (ja) 2006-01-05 2009-06-11 アウロラ、アルット 可視光を検出するために最適化された半導体放射線検出器
WO2007077286A1 (en) 2006-01-05 2007-07-12 Artto Aurola Semiconductor radiation detector detecting visible light
US8288837B2 (en) 2006-01-05 2012-10-16 Artto Aurola Semiconductor radiation detector optimized for detecting visible light
US8148760B2 (en) 2006-01-05 2012-04-03 Artto Aurola Visible light detecting semiconductor radiation detector
US20070176213A1 (en) 2006-01-31 2007-08-02 Sanyo Electric Co., Ltd. Imaging device
US20090153708A1 (en) 2007-12-18 2009-06-18 Sony Corporation Solid-state imaging device and camera
JP2009152234A (ja) 2007-12-18 2009-07-09 Sony Corp 固体撮像装置およびカメラ
US20090284731A1 (en) 2008-05-13 2009-11-19 Samsung Electronics Co., Ltd. Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
JP2011004370A (ja) 2009-06-22 2011-01-06 Sony Corp 固体撮像装置およびカメラ
US20120092536A1 (en) 2009-06-22 2012-04-19 Sony Corporation Solid-state image pickup apparatus and camera
JP2012190951A (ja) 2011-03-10 2012-10-04 Sony Corp 固体撮像装置およびカメラ
US20130016263A1 (en) 2011-07-11 2013-01-17 Sony Corporation Solid-state imaging device, method of driving the same, and electronic apparatus using the same

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Chinese Office Action dated Apr. 28, 2018 in corresponding Chinese Patent Application No. 201480068356.7 with English translation of Chinese Office Action.
Finnish Search Report, dated Jun. 26, 2014, from Corresponding Finnish Application.
Intemational Search Report, dated May 7, 2015, from Corresponding PCT Application.
Japanese Office Action dated Jul. 3, 2018 in corresponding Japanese Patent Application No. 2016-551053 with JPO machine translation of Japanese Office Action.
Office Action issued in Japanese Patent Application No. 2022-080294, dated Aug. 1, 2023.
Chinese Office Action dated Apr. 28, 2018 in corresponding Chinese Patent Application No. 201480068356.7 with English translation of Chinese Office Action.
Finnish Search Report, dated Jun. 26, 2014, from Corresponding Finnish Application.
Intemational Search Report, dated May 7, 2015, from Corresponding PCT Application.
Japanese Office Action dated Jul. 3, 2018 in corresponding Japanese Patent Application No. 2016-551053 with JPO machine translation of Japanese Office Action.
Office Action issued in Japanese Patent Application No. 2022-080294, dated Aug. 1, 2023.

Also Published As

Publication number Publication date
WO2015063375A3 (en) 2015-06-25
JP7441267B2 (ja) 2024-02-29
EP3761363A1 (en) 2021-01-06
JP2022105602A (ja) 2022-07-14
WO2015063375A9 (en) 2015-09-24
JP6625995B2 (ja) 2019-12-25
JP2016536809A (ja) 2016-11-24
WO2015063375A2 (en) 2015-05-07
JP6849777B2 (ja) 2021-03-31
JP2020043360A (ja) 2020-03-19
CN105849908B (zh) 2019-05-07
EP3066689A2 (en) 2016-09-14
US10079325B2 (en) 2018-09-18
USRE49704E1 (en) 2023-10-17
CN105849908A (zh) 2016-08-10
JP2021103779A (ja) 2021-07-15
EP3066689B1 (en) 2020-07-08
JP7078769B2 (ja) 2022-05-31
US20160240720A1 (en) 2016-08-18

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