USRE48617E1 - Package of light emitting diode and method for manufacturing the same - Google Patents

Package of light emitting diode and method for manufacturing the same Download PDF

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Publication number
USRE48617E1
USRE48617E1 US15/986,251 US201815986251A USRE48617E US RE48617 E1 USRE48617 E1 US RE48617E1 US 201815986251 A US201815986251 A US 201815986251A US RE48617 E USRE48617 E US RE48617E
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United States
Prior art keywords
emitting diode
light emitting
reflective coating
coating layer
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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US15/986,251
Inventor
Bo Geun PARK
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Fairlight Innovations LLC
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LG Innotek Co Ltd
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Publication date
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Priority to US15/986,251 priority Critical patent/USRE48617E1/en
Assigned to SUZHOU LEKIN SEMICONDUCTOR CO., LTD. reassignment SUZHOU LEKIN SEMICONDUCTOR CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LG INNOTEK CO., LTD.
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Publication of USRE48617E1 publication Critical patent/USRE48617E1/en
Assigned to FAIRLIGHT INNOVATIONS, LLC reassignment FAIRLIGHT INNOVATIONS, LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/60—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a horizontal or inclined axis
    • B01F27/72—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a horizontal or inclined axis with helices or sections of helices
    • B01F27/721—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a horizontal or inclined axis with helices or sections of helices with two or more helices in the same receptacle
    • B01F27/722—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a horizontal or inclined axis with helices or sections of helices with two or more helices in the same receptacle the helices closely surrounded by a casing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H01L33/54—
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J43/00—Implements for preparing or holding food, not provided for in other groups of this subclass
    • A47J43/04—Machines for domestic use not covered elsewhere, e.g. for grinding, mixing, stirring, kneading, emulsifying, whipping or beating foodstuffs, e.g. power-driven
    • H01L33/60—
    • H01L33/641—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/90—Heating or cooling systems
    • B01F2035/99—Heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F2101/00—Mixing characterised by the nature of the mixed materials or by the application field
    • B01F2101/06—Mixing of food ingredients
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H01L33/486—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Definitions

  • the present invention relates to a package of a light emitting diode, and a method for manufacturing the same.
  • FIG. 1 An example of a related art light-emitting diode (LED) module is formed as illustrated in FIG. 1 .
  • LED light-emitting diode
  • each of LED chips corresponding to a red LED 2 , a green LED 3 and a blue LED 4 respectively is mounted in one independent package.
  • the package is molded with lens-shaped epoxy to form an individual device as a module.
  • An example of a related art LED packaging method includes a method of flip-bonding a light-emitting diode chip on a submount of a silicon optical bench (SIOB), or a method of using a metal core printed circuit board (MCPCB).
  • SIOB silicon optical bench
  • MCPCB metal core printed circuit board
  • the MCPCB refers to a chip on board (COB) structure where an LED chip is directly die-bonded to a printed circuit board (PCB), and then wire bonding is performed thereon for electrical connection.
  • COB chip on board
  • an insulating layer is provided on the thick MCPCB.
  • a lower metal of the MCPCB is flexible while having a thick thickness, deformation may occur when the MCPCB is pressed, a defective rate thus increases, and inconvenience is caused in handling the MCPCB during a process operation.
  • the thick thickness of the lower metal of the MCPCB according to the related art undesirably obstructs formation of a slim package
  • the present invention provides an LED package and a method for manufacturing the same, which can satisfy demands for a slim package by providing a surface mounting type LED package capable of solving disadvantages, such as a thick MCPCB, of the related art LED package.
  • a package of a light emitting diode including: a metal plate; a light-emitting diode chip surface-mounted on the metal plate; an insulating layer on the metal plate, the insulating layer separated from the light-emitting diode chip; a lead frame on the insulating layer; a reflective coating layer on the lead frame; and a molding material molding the light-emitting diode chip in a predetermined shape.
  • a method for manufacturing a package of a light-emitting diode including: forming an insulating layer under a lead frame; forming a light-emitting diode mounting region in the lead frame and the insulating layer; forming a metal plate under the insulating layer in which the light-emitting diode mounting region is formed; forming a reflective coating layer on the lead frame; surface-mounting a light-emitting diode chip on the metal plate in the mounting region; and performing molding on the light-emitting diode chip.
  • a package of a light emitting diode comprising: a base layer; a light emitting diode chip on the base layer; a lead frame electrically connected to the light emitting diode chip; a reflective coating layer directly on the lead frame; and a molding material covering the light emitting diode chip in a predetermined shape, wherein a bottom surface of the reflective coating layer is positioned higher than a bottom surface of the light emitting diode chip, wherein the lead frame includes at least one end portion that is not covered with the reflective coating layer, the at least one portion of the lead frame being adjacent to the light emitting diode chip, and wherein a bottom surface of the reflective coating layer is substantially parallel to a top surface of the base layer.
  • a display device comprising a package of a light emitting diode, the package including a base layer; a light emitting diode chip on the base layer; a lead frame electrically connected to the light emitting diode chip; a reflective coating layer directly on the lead frame; and a molding material covering the light emitting diode chip in a predetermined shape, wherein a bottom surface of the reflective coating layer is positioned higher than a bottom surface of the light emitting diode chip, wherein the lead frame includes at least one end portion that is not covered with the reflective coating layer, the at least one portion of the lead frame being adjacent to the light emitting diode chip, and wherein a bottom surface of the reflective coating layer is substantially parallel to a top surface of the base layer.
  • An LED package and a method for manufacturing the same according to the present invention can meet demands for a slim package by using a thin metal plate and thus considerably reducing a thickness of a PCB.
  • FIG. 1 is an exemplary view of a related art LED package
  • FIGS. 2 through 5 are cross-sectional views of a method for manufacturing an LED package according to an embodiment of the present invention.
  • FIGS. 2 through 5 are cross-sectional views of a method for manufacturing an LED package according to an embodiment of the present invention.
  • an insulating layer 32 is attached to a lead frame 33 .
  • the lead frame 33 is formed of a copper alloy, and may include a circuit with a predetermined pattern.
  • the insulating layer 32 may be formed of a glass epoxy-based material, for example, a flame retardant-4 (FR-4) resin 32 .
  • FR-4 resin 32 is an insulator made of a dielectric resin, and has a high mechanical strength and excellent durability, thereby experiencing just small thermal deformation even if the FR-4 resin 32 has a thin thickness.
  • the FR-4 resin 32 is a proper material for formation of multiple layers because of its adhesiveness.
  • the FR-4 resin 32 is attached to a surface of the lead frame 33 using a press or a thermo-compression jig, the FR-4 resin 32 is attached thereto by heat applied by the press or the thermo-compression jig because of the adhesiveness of the FR-4 resin 32 .
  • an LED mounting region is formed in the lead frame 33 and the FR-4 resin 32 .
  • the FR-4 resin 32 and the lead frame 33 that are attached together are punched by a mechanical method, for example, a drilling machine, to for iii a space where an LED chip 35 of FIG. 5 is to be mounted.
  • an attached plate of the FR-4 resin 32 and the lead frame 33 may be punched to form an LED mounting space having a cylindrical shape or a quadrangle-shaped container.
  • a punched section of the FR-4 resin 32 and the lead frame 33 may be an inclined surface that is tapered from the lead frame 33 toward the FR-4 resin 32
  • a metal plate 31 is high-temperature compressed and attached to a lower surface of the FR-4 resin 32 .
  • the metal plate 31 may be formed of a metal material having thermal conductivity, such as aluminum (Al) and silver (Au).
  • the metal plate 31 Since the metal plate 31 is thinner than that of the related art, the metal plate 31 contributes to considerably reducing the thickness of the PCB to meet demands for a slim package.
  • the metal plate 31 has a thickness ranging from about 25 D to about 75 D, and acts as a heat sink. Also, as the LED chip 35 of FIG. 5 is mounted on the metal plate 31 , so that the demands for the slimness of the LED package can be satisfied.
  • the press or the thermo-compression jig may be used in the same manner as when the FR-4 resin 32 and the lead frame 33 are attached together.
  • a reflective coating layer 34 is formed on an upper surface of the lead frame 33 .
  • the reflective coating layer 34 may be formed of a material with high reflectance in order to improve brightness of light emitted from the LED chip 35 .
  • the reflective coating layer 34 may include a white resin including titanium oxide and resin as main components and formed by mixing calcium carbonate, barium sulfate, zinc oxide, or the like.
  • the reflective coating layer 34 may be formed using a white pigment besides the white resin.
  • a screen printing method not a related art pneumatic dispensing method which has been widely used, is proposed as a method for applying the white resin for the reflective coating layer 34 .
  • the screen printing method can apply the white resin to a relatively large area within a short period of time, and requires a small equipment investment cost.
  • a screen mask (not shown) having a thickness of, for example, 50 D, is formed on a punched portion of the FR-4 resin 32 and the lead frame 33 , specifically, on a space in which the LED chip 35 is to be mounted. Thereafter, a portion excluding the screen mask is filled with the white resin using a squeeze (not shown).
  • the squeeze moves along an upper surface of the screen mask while rubbing a liquid white resin in a preset direction, so that the portion excluding the screen mask can be filled with the liquid white resin.
  • the screen mask is removed, and annealing is performed at a preset temperature to cure the white resin, and a surface of the white resin is planarized on the same level as the upper surface of the screen mask.
  • the LED chip 35 is mounted on the metal plate 31 in the mounting space.
  • the LED chip 35 is mounted on the metal plate 31 using paste (not shown) having thermal conductivity, and the LED chip 35 and the lead frame 33 can be electrically connected using a wire 36 .
  • the LED chip may be flip-bonded to a silicon optical bench (SIOB) (not shown), the SIOB to which the LED chip flip-bonded has been flip-bonded may be mounted on the metal plate 31 , and electrical connection therebetween may be made using a wire.
  • SIOB silicon optical bench
  • an epoxy resin as a molding material 37 , is injected for molding to a space encompassed by the FR-4 resin 32 , the lead frame 33 and the reflective coating layer 34 over the LED chip 35 .
  • a surface mounting type LED package formed in the above-described manner can meet the demands for a slim package since a thin metal layer having a thickness ranging from about 25 D to 75 D is used, and thus a thin thickness of about 0.6 mm to about 0.4 mm is implemented between the reflective coating layer 34 and the metal plate 31 .
  • the LED chip since the LED chip is mounted on the metal plate, heat generated from the LED chip can be directly conducted to the metal plate, thereby achieving effective heat-release.
  • LED chip is taken as an example for describing a surface mounting type LED package according to the present invention
  • the present invention is not limited thereto, and a plurality of packages each including a plurality of LED chips can be implemented and used for a backlight unit of a liquid crystal display (LCD) device.
  • LCD liquid crystal display

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Food Science & Technology (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Led Device Packages (AREA)

Abstract

Provided is a package of a light emitting diode. The package according to an embodiment includes a base layer, a light emitting diode chip on the base layer, a lead frame electrically connected to the light emitting diode chip, a reflective coating layer directly on the lead frame, and a molding material covering the light emitting diode chip in a predetermined shape.

Description

CROSS-REFERENCE FOR RELATED APPLICATIONS
This application is a Continuation of co-pending U.S. patent application Ser. No. 12/162,105 filed on Jul. 24, 2008, which is the national phase of PCT International Application No. PCT/KR2007/000381 filed on Jan. 23, 2007, and which claims priority to Application No. 10-2006-0008158 filed in the Republic of Korea on Jan. 26, 2006. The entire content of all of the above applications is hereby incorporated by reference.This application is a reissue application of U.S. application Ser. No. 13/052,587, filed Mar. 21, 2011 and issued as U.S. Pat. No. 8,217,413 on Jul. 10, 2012, which is a continuation of U.S. patent application Ser. No. 12/162,105 filed on Jul. 24, 2008 and issued as U.S. Pat. No. 7,935,976 on May 3, 2011, which is the national phase of PCT International Application No. PCT/KR2007/000381 filed on Jan. 23, 2007, and which claims priority to Application No. 10-2006-0008158 filed in the Republic of Korea on Jan. 26, 2006. The entire content of all of the above applications is hereby incorporated by reference.
TECHNICAL FIELD
The present invention relates to a package of a light emitting diode, and a method for manufacturing the same.
BACKGROUND ART
An example of a related art light-emitting diode (LED) module is formed as illustrated in FIG. 1. As for the related art LED module of FIG. 1, each of LED chips corresponding to a red LED 2, a green LED 3 and a blue LED 4 respectively is mounted in one independent package. The package is molded with lens-shaped epoxy to form an individual device as a module.
An example of a related art LED packaging method includes a method of flip-bonding a light-emitting diode chip on a submount of a silicon optical bench (SIOB), or a method of using a metal core printed circuit board (MCPCB).
The MCPCB refers to a chip on board (COB) structure where an LED chip is directly die-bonded to a printed circuit board (PCB), and then wire bonding is performed thereon for electrical connection.
However, in the case where the MCPCB is used among COB type packages according to the related art, an insulating layer is provided on the thick MCPCB. Here, since a lower metal of the MCPCB is flexible while having a thick thickness, deformation may occur when the MCPCB is pressed, a defective rate thus increases, and inconvenience is caused in handling the MCPCB during a process operation.
Also, the thick thickness of the lower metal of the MCPCB according to the related art undesirably obstructs formation of a slim package
Furthermore, since the LED chip does not directly contact a metal plate according to the related art, heat generated from the LED chip cannot be sufficiently released.
DISCLOSURE OF INVENTION Technical Problem
The present invention provides an LED package and a method for manufacturing the same, which can satisfy demands for a slim package by providing a surface mounting type LED package capable of solving disadvantages, such as a thick MCPCB, of the related art LED package.
Technical Solution
In one embodiment of the present invention, there is provided a package of a light emitting diode including: a metal plate; a light-emitting diode chip surface-mounted on the metal plate; an insulating layer on the metal plate, the insulating layer separated from the light-emitting diode chip; a lead frame on the insulating layer; a reflective coating layer on the lead frame; and a molding material molding the light-emitting diode chip in a predetermined shape.
In another embodiment of the present invention, there is provided a method for manufacturing a package of a light-emitting diode, including: forming an insulating layer under a lead frame; forming a light-emitting diode mounting region in the lead frame and the insulating layer; forming a metal plate under the insulating layer in which the light-emitting diode mounting region is formed; forming a reflective coating layer on the lead frame; surface-mounting a light-emitting diode chip on the metal plate in the mounting region; and performing molding on the light-emitting diode chip.
In another embodiment, there is provided a package of a light emitting diode, the package comprising: a base layer; a light emitting diode chip on the base layer; a lead frame electrically connected to the light emitting diode chip; a reflective coating layer directly on the lead frame; and a molding material covering the light emitting diode chip in a predetermined shape, wherein a bottom surface of the reflective coating layer is positioned higher than a bottom surface of the light emitting diode chip, wherein the lead frame includes at least one end portion that is not covered with the reflective coating layer, the at least one portion of the lead frame being adjacent to the light emitting diode chip, and wherein a bottom surface of the reflective coating layer is substantially parallel to a top surface of the base layer.
In another embodiment, there is provided a display device: comprising a package of a light emitting diode, the package including a base layer; a light emitting diode chip on the base layer; a lead frame electrically connected to the light emitting diode chip; a reflective coating layer directly on the lead frame; and a molding material covering the light emitting diode chip in a predetermined shape, wherein a bottom surface of the reflective coating layer is positioned higher than a bottom surface of the light emitting diode chip, wherein the lead frame includes at least one end portion that is not covered with the reflective coating layer, the at least one portion of the lead frame being adjacent to the light emitting diode chip, and wherein a bottom surface of the reflective coating layer is substantially parallel to a top surface of the base layer.
Advantageous Effects
An LED package and a method for manufacturing the same according to the present invention can meet demands for a slim package by using a thin metal plate and thus considerably reducing a thickness of a PCB.
Also, according to the present invention, since an LED chip is mounted on the metal plate, heat generated from the LED chip is directly conducted to the metal plate, and thus effective heat release can be achieved.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is an exemplary view of a related art LED package; and
FIGS. 2 through 5 are cross-sectional views of a method for manufacturing an LED package according to an embodiment of the present invention.
 MODE FOR THE INVENTION
An LED package and a method for manufacturing the same according to an embodiment of the present invention will now be described in detail with reference accompanying drawings.
It will be understood that when a layer (or film) is referred to as being ‘on’ or ‘under’ another layer or substrate, it can be directly on or under the other layer or substrate, or intervening layers may also be present.
FIGS. 2 through 5 are cross-sectional views of a method for manufacturing an LED package according to an embodiment of the present invention.
Referring to FIG. 2, an insulating layer 32 is attached to a lead frame 33.
The lead frame 33 is formed of a copper alloy, and may include a circuit with a predetermined pattern.
Also, the insulating layer 32 may be formed of a glass epoxy-based material, for example, a flame retardant-4 (FR-4) resin 32. Here, the FR-4 resin 32 is an insulator made of a dielectric resin, and has a high mechanical strength and excellent durability, thereby experiencing just small thermal deformation even if the FR-4 resin 32 has a thin thickness. Also, the FR-4 resin 32 is a proper material for formation of multiple layers because of its adhesiveness.
When the FR-4 resin 32 is attached to a surface of the lead frame 33 using a press or a thermo-compression jig, the FR-4 resin 32 is attached thereto by heat applied by the press or the thermo-compression jig because of the adhesiveness of the FR-4 resin 32.
Referring to FIG. 3, an LED mounting region is formed in the lead frame 33 and the FR-4 resin 32.
Specifically, the FR-4 resin 32 and the lead frame 33 that are attached together are punched by a mechanical method, for example, a drilling machine, to for iii a space where an LED chip 35 of FIG. 5 is to be mounted.
Here, an attached plate of the FR-4 resin 32 and the lead frame 33 may be punched to form an LED mounting space having a cylindrical shape or a quadrangle-shaped container.
Instead, a punched section of the FR-4 resin 32 and the lead frame 33 may be an inclined surface that is tapered from the lead frame 33 toward the FR-4 resin 32
Then, referring to FIG. 3, a metal plate 31 is high-temperature compressed and attached to a lower surface of the FR-4 resin 32.
Here, the metal plate 31 may be formed of a metal material having thermal conductivity, such as aluminum (Al) and silver (Au).
Since the metal plate 31 is thinner than that of the related art, the metal plate 31 contributes to considerably reducing the thickness of the PCB to meet demands for a slim package.
For example, the metal plate 31 has a thickness ranging from about 25 D to about 75 D, and acts as a heat sink. Also, as the LED chip 35 of FIG. 5 is mounted on the metal plate 31, so that the demands for the slimness of the LED package can be satisfied.
Also, when the metal plate 31 is high-temperature compressed and attached to the lower surface of the FR-4 resin 32, the press or the thermo-compression jig may be used in the same manner as when the FR-4 resin 32 and the lead frame 33 are attached together.
Then, referring to FIG. 4, a reflective coating layer 34 is formed on an upper surface of the lead frame 33.
Here, the reflective coating layer 34 may be formed of a material with high reflectance in order to improve brightness of light emitted from the LED chip 35.
The reflective coating layer 34 may include a white resin including titanium oxide and resin as main components and formed by mixing calcium carbonate, barium sulfate, zinc oxide, or the like.
Also, the reflective coating layer 34 may be formed using a white pigment besides the white resin.
In the present invention, a screen printing method, not a related art pneumatic dispensing method which has been widely used, is proposed as a method for applying the white resin for the reflective coating layer 34.
As compared to the related art pneumatic dispensing method, the screen printing method can apply the white resin to a relatively large area within a short period of time, and requires a small equipment investment cost.
A screen mask (not shown) having a thickness of, for example, 50 D, is formed on a punched portion of the FR-4 resin 32 and the lead frame 33, specifically, on a space in which the LED chip 35 is to be mounted. Thereafter, a portion excluding the screen mask is filled with the white resin using a squeeze (not shown).
Specifically, the squeeze moves along an upper surface of the screen mask while rubbing a liquid white resin in a preset direction, so that the portion excluding the screen mask can be filled with the liquid white resin.
After the portion excluding the screen mask is filled with the liquid white resin, the screen mask is removed, and annealing is performed at a preset temperature to cure the white resin, and a surface of the white resin is planarized on the same level as the upper surface of the screen mask.
Then, referring to FIG. 5, the LED chip 35 is mounted on the metal plate 31 in the mounting space.
The LED chip 35 is mounted on the metal plate 31 using paste (not shown) having thermal conductivity, and the LED chip 35 and the lead frame 33 can be electrically connected using a wire 36.
Also, in the present invention, the LED chip may be flip-bonded to a silicon optical bench (SIOB) (not shown), the SIOB to which the LED chip flip-bonded has been flip-bonded may be mounted on the metal plate 31, and electrical connection therebetween may be made using a wire.
After the LED chip 35 is mounted, an epoxy resin, as a molding material 37, is injected for molding to a space encompassed by the FR-4 resin 32, the lead frame 33 and the reflective coating layer 34 over the LED chip 35.
A surface mounting type LED package formed in the above-described manner can meet the demands for a slim package since a thin metal layer having a thickness ranging from about 25 D to 75 D is used, and thus a thin thickness of about 0.6 mm to about 0.4 mm is implemented between the reflective coating layer 34 and the metal plate 31.
Also, according to the present invention, since the LED chip is mounted on the metal plate, heat generated from the LED chip can be directly conducted to the metal plate, thereby achieving effective heat-release.
INDUSTRIAL APPLICABILITY
It will be apparent to those skilled in the art that various modifications and variations can he made in the present invention. Thus, it is intended that the present invention covers the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Specifically, although one LED chip is taken as an example for describing a surface mounting type LED package according to the present invention, the present invention is not limited thereto, and a plurality of packages each including a plurality of LED chips can be implemented and used for a backlight unit of a liquid crystal display (LCD) device.

Claims (19)

What is claimed is:
1. A package of a semiconductor light emitting diode, the package comprising:
a base layer;
a semiconductor light emitting diode chip on the base layer;
a lead frameat least two lead frames electrically connected to the semiconductor light emitting diode chip;
a first portion of a reflective coating layer directly on the lead frame at least two lead frames; and
a molding material covering the semiconductor light emitting diode chip in a predetermined shape,
wherein a bottom surface of a second portion of the reflective coating layer is positioned higher than a bottom surface of the semiconductor light emitting diode chip,
wherein each top surface of the at least two lead frames are a same height,
wherein each bottom surface of the at least two lead frames are lower than a top surface of the semiconductor light emitting diode chip,
wherein the lead frame at least one of the at least two lead frames includes at least one end portion that is not covered with the reflective coating layer, the at least one end portion of the lead frame being adjacent to the semiconductor light emitting diode chip,
wherein a the bottom surface of the second portion of the reflective coating layer is substantially parallel to a top surface of the base layer,
wherein a thickness from the bottom surface of the second portion of the reflective coating layer to a topmost surface of the second portion of the reflective coating layer is thinner than a thickness from the bottom surface of the semiconductor light emitting diode chip to a topmost surface of the semiconductor light emitting diode chip, and
wherein the reflective coating lager comprises a white resin including at least one of titanium oxide, calcium carbonate, or barium sulfate, and zinc oxide
wherein an uppermost portion of the molding material covering the semiconductor light emitting diode chip is disposed higher than an uppermost portion of the reflective coating layer,
wherein the molding material directly contacts at least a portion of the reflective coating layer,
wherein a bottommost surface of the reflective coating layer is positioned higher than a topmost surface of the semiconductor light emitting diode chip,
wherein a contact surface between the reflective coating layer and the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip,
wherein the bottommost surface of the reflective coating layer is positioned higher than topmost surfaces of the at least two lead frames, and
wherein the topmost surfaces of the at least two lead frames are positioned higher than the topmost surface of the semiconductor light emitting diode chip.
2. The package according to claim 1, wherein the base layer comprises a metal.
3. The package according to claim 1, further comprising:
an insulating layer on the base layer, wherein the insulating layer comprises a flame retardant-resin.
4. The package according to claim 1, wherein ends of the lead frame at least two lead frames and ends of the reflective coating layer are aligned with each other.
5. The package according to claim 1, wherein ends of the reflective coating layer and base layer are aligned with each other.
6. The package according to claim 1, wherein an entire top surface of the base layer is substantially flat.
7. The package according to claim 1, wherein the bottom surface of the second portion of the reflective coating layer is positioned higher than the topmost surface of the semiconductor light emitting diode chip.
8. A display device comprising:
a package of a semiconductor light emitting diode, the package including a base layer;
a semiconductor light emitting diode chip on the base layer;
a lead frameat least two lead frames electrically connected to the semiconductor light emitting diode chip;
a first portion of a reflective coating layer directly on the lead framethe at least two lead frames; and
a molding material covering the semiconductor light emitting diode chip in a predetermined shape,
wherein a bottom surface of a second portion of the reflective coating layer is positioned higher than a bottom surface of the semiconductor light emitting diode chip,
wherein each top surface of the at least two lead frames are a same height,
wherein each bottom surface of the at least two lead frames are lower than a top surface of the semiconductor light emitting diode chip,
wherein the lead frame at least one of the two lead frames includes at least one end portion that is not covered with the reflective coating layer, the at least one end portion of the lead frame being adjacent to the semiconductor light emitting diode chip,
wherein a the bottom surface of the second portion of the reflective coating layer is substantially parallel to a top surface of the base layer,
wherein a thickness from the bottom surface of the second portion of the reflective coating layer to a topmost surface of the second portion of the reflective coating layer is thinner than a thickness from the bottom surface of the semiconductor light emitting diode chip to a topmost surface of the semiconductor light emitting diode chip, and
wherein the reflective coating layer comprises a white resin including at least one of titanium oxide, calcium carbonate, or barium sulfate, and zinc oxide
wherein an uppermost portion of the molding material covering the semiconductor light emitting diode chip is disposed higher than an uppermost portion of the reflective coating layer,
wherein the molding material directly contacts at least a portion of the reflective coating layer,
wherein a bottommost surface of the reflective coating layer is positioned higher than a topmost surface of the semiconductor light emitting diode chip,
wherein a contact surface between the reflective coating layer and the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip,
wherein the bottommost surface of the reflective coating layer is positioned higher than topmost surfaces of the at least two lead frames, and
wherein the topmost surfaces of the at least two lead frames are positioned higher than the topmost surface of the semiconductor light emitting diode chip.
9. The display device according to claim 8, wherein the base layer comprises a metal.
10. The display device according to claim 8, the package further comprising:
an insulating layer on the base layer and wherein the insulating layer comprises a flame retardant-4 resin.
11. The display device according to claim 8, wherein ends of the lead frame at least two lead frames and ends of the reflective coating layer are aligned with each other.
12. The display device according to claim 8, wherein ends of the reflective coating layer and base layer are aligned with each other.
13. The display device according to claim 8, wherein an entire top surface of the base layer is substantially flat.
14. The display device according to claim 8, wherein the bottom surface of the second portion of the reflective coating layer is positioned higher than the topmost surface of the semiconductor light emitting diode chip.
15. The package according to claim 1, wherein a topmost surface of one of the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip.
16. The package according to claim 1, wherein a surface of the reflective coating layer is not corresponded to a side surface of the semiconductor light emitting diode chip.
17. The display device according to claim 8, wherein a height from a top surface of the reflective coating layer to a top point of the molding material is two times higher than a thickness of the reflective coating layer.
18. The display device according to claim 8, wherein a topmost surface of one of the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip.
19. The display device according to claim 8, wherein a surface of the reflective coating layer is not corresponded to a side surface of the semiconductor light emitting diode chip.
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Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
KR100917712B1 (en) * 2007-12-13 2009-09-21 유트로닉스주식회사 LED Array Module Using Aluminum Metal Substrate
GB2458972B (en) 2008-08-05 2010-09-01 Photonstar Led Ltd Thermally optimised led chip-on-board module
TWI420695B (en) * 2008-10-21 2013-12-21 榮創能源科技股份有限公司 Package module structure of compound semiconductor component and manufacturing method thereof
US8791471B2 (en) * 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
KR100989579B1 (en) * 2008-12-26 2010-10-25 루미마이크로 주식회사 Chip on board LED package and manufacturing method thereof
JP2010212508A (en) * 2009-03-11 2010-09-24 Sony Corp Light emitting element mounting package, light emitting device, backlight, and liquid crystal display
TW201103170A (en) * 2009-07-08 2011-01-16 Paragon Sc Lighting Tech Co LED package structure with concave area for positioning heat-conducting substance and method for manufacturing the same
KR101152173B1 (en) * 2010-08-25 2012-06-15 하나 마이크론(주) LED Package and Method of manufacturing LED Package
JP2012077235A (en) 2010-10-05 2012-04-19 Nitto Denko Corp Epoxy resin composition for optical semiconductor device, lead frame obtained by using the same for optical semiconductor device, and optical semiconductor device
IT1402806B1 (en) * 2010-11-29 2013-09-18 St Microelectronics Srl PHOTOMOLTIPLICATOR INCAPSULATED BY SEMICONDUCTOR MATERIAL, IN PARTICULAR FOR USE IN MACHINES FOR THE PERFORMANCE OF TOMOGRAPHY WITH POSITRON EMISSION.
US9041046B2 (en) * 2011-03-15 2015-05-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and apparatus for a light source
US20120236529A1 (en) * 2011-03-15 2012-09-20 Avago Technologies Ecbu Ip(Singapore) Pte. Ltd. Method And Apparatus For A Light Source
KR101804892B1 (en) 2011-04-14 2017-12-06 엘지디스플레이 주식회사 Light emitting diode assembly and liquid crystal display device having the same
JP2014003260A (en) * 2012-06-21 2014-01-09 Sumitomo Electric Printed Circuit Inc Printed wiring board, printed wiring board assembly, manufacturing method of printed wiring board, and lighting device
KR102099814B1 (en) * 2013-01-25 2020-04-13 루미리즈 홀딩 비.브이. Lighting assembly and method for manufacturing a lighting assembly
US20140208689A1 (en) 2013-01-25 2014-07-31 Renee Joyal Hypodermic syringe assist apparatus and method
KR20150001025A (en) 2013-06-26 2015-01-06 삼성디스플레이 주식회사 Light source assembly, display apparatus having the same, and method of manufacturing the same
EP3032595A1 (en) * 2014-12-08 2016-06-15 Millennium Substrates Sdn Bhd A method of manufacturing chip-on-board and surface mount device LED substrate
US10153416B1 (en) * 2017-05-23 2018-12-11 Radiant Choice Limited Package body and light emitting device using same
JP7349303B2 (en) * 2019-09-20 2023-09-22 株式会社ジャパンディスプレイ LED module and display device
CN111554696B (en) * 2020-05-13 2024-03-29 京东方科技集团股份有限公司 Total reflection type display substrate, manufacturing method thereof and total reflection type display device

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900863A (en) * 1974-05-13 1975-08-19 Westinghouse Electric Corp Light-emitting diode which generates light in three dimensions
JPH06252315A (en) 1993-03-01 1994-09-09 Hitachi Cable Ltd Semiconductor device
JPH088463A (en) 1994-06-21 1996-01-12 Sharp Corp Thin LED dot matrix unit
JP2001036154A (en) 1999-02-18 2001-02-09 Nichia Chem Ind Ltd Chip component type light emitting device and manufacturing method thereof
US6233817B1 (en) 1999-01-17 2001-05-22 Delphi Technologies, Inc. Method of forming thick-film hybrid circuit on a metal circuit board
US6355946B1 (en) 1998-12-16 2002-03-12 Rohm Co., Ltd. Semiconductor device with reflector
US6468813B1 (en) * 2000-05-01 2002-10-22 Advanced Semiconductor Engineering, Inc. Method of automatically identifying and skipping defective work pieces for wire-bonding operation
JP2003023183A (en) 2001-07-06 2003-01-24 Stanley Electric Co Ltd Surface mount type LED lamp
JP2003338639A (en) 2002-05-21 2003-11-28 Rohm Co Ltd Display
US6707069B2 (en) 2001-12-24 2004-03-16 Samsung Electro-Mechanics Co., Ltd Light emission diode package
US20040065894A1 (en) * 2001-08-28 2004-04-08 Takuma Hashimoto Light emitting device using led
WO2004053933A2 (en) 2002-12-06 2004-06-24 Cree, Inc. Composite leadframe led package and method of making the same
US20040211970A1 (en) * 2003-04-24 2004-10-28 Yoshiaki Hayashimoto Semiconductor light emitting device with reflectors having cooling function
JP2005039100A (en) 2003-07-16 2005-02-10 Matsushita Electric Works Ltd Circuit components for high thermal conductivity light emitting devices and high heat dissipation modules
WO2005043637A1 (en) 2003-10-31 2005-05-12 Toyoda Gosei Co., Ltd. Light emitting device
US6943380B2 (en) 2000-12-28 2005-09-13 Toyoda Gosei Co., Ltd. Light emitting device having phosphor of alkaline earth metal silicate
JP2005277382A (en) 2004-02-23 2005-10-06 Kyocera Corp Electronic component storage package and electronic device
US20060071222A1 (en) 2003-06-13 2006-04-06 Yasushi Yatsuda Led lamp for light source
WO2006095949A1 (en) 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Led package having an array of light emitting cells coupled in series
US20060226435A1 (en) 2005-04-12 2006-10-12 Mok Thye L Compact light emitting device package with enhanced heat dissipation and method for making the package
US7223620B2 (en) * 2002-12-12 2007-05-29 Osram Opto Semiconductor Gmbh Process for the production of light-emitting diode light sources with a luminescence conversion element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512103A (en) * 1994-02-18 1996-04-30 Eastman Kodak Company Silver halide color photography element with improved high density contrast and bright low density colors
US6469322B1 (en) * 1998-02-06 2002-10-22 General Electric Company Green emitting phosphor for use in UV light emitting diodes
JP4432275B2 (en) 2000-07-13 2010-03-17 パナソニック電工株式会社 Light source device
US20020085390A1 (en) * 2000-07-14 2002-07-04 Hironobu Kiyomoto Optical device and apparatus employing the same
JP4383088B2 (en) 2003-04-30 2009-12-16 株式会社住友金属エレクトロデバイス Light emitting device storage package
JP2005136224A (en) 2003-10-30 2005-05-26 Asahi Kasei Electronics Co Ltd Light emitting diode lighting module
US7980743B2 (en) * 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900863A (en) * 1974-05-13 1975-08-19 Westinghouse Electric Corp Light-emitting diode which generates light in three dimensions
JPH06252315A (en) 1993-03-01 1994-09-09 Hitachi Cable Ltd Semiconductor device
JPH088463A (en) 1994-06-21 1996-01-12 Sharp Corp Thin LED dot matrix unit
US6355946B1 (en) 1998-12-16 2002-03-12 Rohm Co., Ltd. Semiconductor device with reflector
US6233817B1 (en) 1999-01-17 2001-05-22 Delphi Technologies, Inc. Method of forming thick-film hybrid circuit on a metal circuit board
JP2001036154A (en) 1999-02-18 2001-02-09 Nichia Chem Ind Ltd Chip component type light emitting device and manufacturing method thereof
US6468813B1 (en) * 2000-05-01 2002-10-22 Advanced Semiconductor Engineering, Inc. Method of automatically identifying and skipping defective work pieces for wire-bonding operation
US6943380B2 (en) 2000-12-28 2005-09-13 Toyoda Gosei Co., Ltd. Light emitting device having phosphor of alkaline earth metal silicate
JP2003023183A (en) 2001-07-06 2003-01-24 Stanley Electric Co Ltd Surface mount type LED lamp
US20040065894A1 (en) * 2001-08-28 2004-04-08 Takuma Hashimoto Light emitting device using led
US6707069B2 (en) 2001-12-24 2004-03-16 Samsung Electro-Mechanics Co., Ltd Light emission diode package
JP2003338639A (en) 2002-05-21 2003-11-28 Rohm Co Ltd Display
WO2004053933A2 (en) 2002-12-06 2004-06-24 Cree, Inc. Composite leadframe led package and method of making the same
US7223620B2 (en) * 2002-12-12 2007-05-29 Osram Opto Semiconductor Gmbh Process for the production of light-emitting diode light sources with a luminescence conversion element
US20040211970A1 (en) * 2003-04-24 2004-10-28 Yoshiaki Hayashimoto Semiconductor light emitting device with reflectors having cooling function
US20060071222A1 (en) 2003-06-13 2006-04-06 Yasushi Yatsuda Led lamp for light source
JP2005039100A (en) 2003-07-16 2005-02-10 Matsushita Electric Works Ltd Circuit components for high thermal conductivity light emitting devices and high heat dissipation modules
WO2005043637A1 (en) 2003-10-31 2005-05-12 Toyoda Gosei Co., Ltd. Light emitting device
US7607801B2 (en) 2003-10-31 2009-10-27 Toyoda Gosei Co., Ltd. Light emitting apparatus
JP2005277382A (en) 2004-02-23 2005-10-06 Kyocera Corp Electronic component storage package and electronic device
WO2006095949A1 (en) 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Led package having an array of light emitting cells coupled in series
US20060226435A1 (en) 2005-04-12 2006-10-12 Mok Thye L Compact light emitting device package with enhanced heat dissipation and method for making the package

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Full English machine translation for JP-2003-338639-A published Nov. 28, 2003.
Full English machine translation for JP-2005-39100-A published Feb. 10, 2005.
Full English machine translation for JP-6-252315-A published Sep. 9, 1994.
Full English machine translation for JP-8-8463-A published Jan. 12, 1996.

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US20090020774A1 (en) 2009-01-22
US7935976B2 (en) 2011-05-03
US9450156B2 (en) 2016-09-20
US20110169032A1 (en) 2011-07-14
JP2012074753A (en) 2012-04-12
US20110169021A1 (en) 2011-07-14
KR101283182B1 (en) 2013-07-05
US8552449B2 (en) 2013-10-08
US20140008689A1 (en) 2014-01-09
US8217413B2 (en) 2012-07-10
CN101375392B (en) 2013-10-02
JP2009524930A (en) 2009-07-02
CN101375392A (en) 2009-02-25

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