US9519192B2 - Array substrate, flat display panel and manufacturing method for the same - Google Patents
Array substrate, flat display panel and manufacturing method for the same Download PDFInfo
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- US9519192B2 US9519192B2 US14/647,803 US201514647803A US9519192B2 US 9519192 B2 US9519192 B2 US 9519192B2 US 201514647803 A US201514647803 A US 201514647803A US 9519192 B2 US9519192 B2 US 9519192B2
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 230000005684 electric field Effects 0.000 claims abstract description 69
- 238000009413 insulation Methods 0.000 claims abstract description 60
- 238000005530 etching Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 239000004973 liquid crystal related substance Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000012780 transparent material Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
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- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- H01L27/1288—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G02F2001/134372—
Definitions
- the present invention relates to the liquid crystal display technology, and more particularly to an array substrate, a flat display panel and manufacturing method for the same.
- an array substrate having a fringe-field switching (FFS) mode includes: a substrate 1 , a common electrode 2 disposed on the substrate, an insulation layer 3 disposed on the common electrode 2 and multiple pixel electrodes 4 disposed on the insulation layer 3 at intervals.
- FFS fringe-field switching
- the main technology problem solved by the present invention is to provide an array substrate, a flat display panel and a manufacturing for the same.
- the electric field strength between pixel electrodes and the electric field strength above the pixel electrodes can be adjusted in order to increase the display quality of the flat display panel.
- an array substrate comprising: a substrate; a common electrode disposed on the substrate; an insulation layer disposed on the common electrode, wherein, the insulation layer includes multiple first regions and multiple second regions, and the first regions and the second regions are disposed alternately; and multiple pixel electrodes respectively disposed on the first regions of the insulation layer; wherein, a thickness of the first regions and a thickness of the second regions are different, and the thickness of the first regions is greater than the thickness of the second regions, and the common electrode and the pixel electrodes are made by a transparent and conductive material.
- a difference of the thickness of the first regions and the thickness of the second regions is set to maintain a difference of an electric field strength between pixel electrodes and an electric field strength above the pixel electrodes in a predetermined range.
- a difference of the thickness of the first regions and the thickness of the second regions is set to make a difference of an electric field strength between pixel electrodes and an electric field strength above the pixel electrodes be zero.
- an array substrate comprising: a substrate; a common electrode disposed on the substrate; an insulation layer disposed on the common electrode, wherein, the insulation layer includes multiple first regions and multiple second regions, and the first regions and the second regions are disposed alternately; and multiple pixel electrodes respectively disposed on the first regions of the insulation layer; wherein, a thickness of the first regions and a thickness of the second regions are different.
- a flat display panel comprising: a color filter substrate; an array substrate disposed oppositely to the color filter substrate; and a liquid crystal layer disposed between the color filter substrate and the array substrate; wherein, the array substrate includes: a substrate; a common electrode disposed on the substrate; an insulation layer disposed on the common electrode, wherein, the insulation layer includes multiple first regions and multiple second regions, and the first regions and the second regions are disposed alternately; and multiple pixel electrodes respectively disposed on the first regions of the insulation layer; wherein, a thickness of the first regions and a thickness of the second regions are different.
- a manufacturing method for an array substrate comprising: sequentially forming a common electrode, an insulation layer and pixel electrode layer on a substrate; coating a photoresist layer on the pixel electrode layer; exposing and developing the photoresist layer in order to form a patterned photoresist layer; utilizing the patterned photoresist layer and a first etching method to etch the pixel electrode layer in order to form multiple spaced pixel electrodes; and utilizing the patterned photoresist layer and a second etching method to etch the insulation layer such that the insulation layer forms multiple alternate first regions and second regions, wherein, a thickness of the first regions and a thickness of the second regions are different.
- the first etching method is a wet etching
- the second etching method is a dry etching
- the insulation layer of the array substrate includes multiple first regions and multiple second regions, wherein, the first regions and the second regions are disposed alternately. Besides, the thickness of the first regions and the thickness of the second regions are different. Then, multiple pixel electrodes are respectively disposed on the first region of the insulation layer. Because the thickness of the first regions and the thickness of the second regions are different, through adjusting the thickness of the first regions and the thickness of the second regions, the electric field strength between pixel electrodes and the electric field strength above the pixel electrode can be adjusted.
- the difference of the electric field strength between pixel electrodes and the electric field strength above the pixel electrode is maintained in a predetermined range, and even zero such that the brightness between pixel electrodes and the brightness above the pixel electrodes are uniform in order to avoid generating a water ripple phenomenon in a flat display panel so as to increase the display quality and user experience.
- FIG. 1 is an electric field distribution diagram of a conventional array substrate
- FIG. 2 is a schematic cross-sectional view of a flat display panel according to an embodiment of the present invention
- FIG. 3 is an electric field distribution diagram of the flat display panel shown in FIG. 2 ;
- FIG. 4 is a flow chart of a manufacturing method of an array substrate according to an embodiment of the present invention.
- FIG. 2 is a schematic cross-sectional view of a flat display panel according to an embodiment of the present invention.
- the flat display panel 100 includes an array substrate 10 , a color filter substrate 30 , and a liquid crystal layer 20 disposed between the array substrate 10 and the color filter substrate 30 .
- the array substrate 10 includes a substrate 12 , a common electrode 14 , an insulation layer 16 and multiple pixel electrodes 18 .
- the substrate 12 is disposed at the lowest layer of the array substrate 10 (using FIG. 2 as a reference).
- the common electrode 14 is disposed on the substrate 12 .
- the common electrode 14 can be made by a transparent and conductive material or any other materials used for manufacturing conventional common electrodes such as the metal material, etc.
- the insulation layer 16 includes multiple first regions 162 and multiple second regions 164 .
- the first regions 162 and the second regions 164 are disposed alternately. Wherein, a thickness of the first regions 162 and a thickness of the second regions 164 are different. Wherein, the first regions 162 and the second regions 164 can be made by a same material or different materials.
- the multiple pixel electrodes 18 are respectively disposed on the first regions 162 of the insulation layer 16 such that the pixel electrodes 18 are disposed on the insulation layer 16 at intervals.
- the pixel electrodes can be made by a transparent and conductive material or any other materials used for manufacturing the conventional pixel electrodes such as a polysilicon, etc.
- the liquid crystal layer 20 is disposed between the color filter substrate 30 and the array substrate 10 .
- the liquid crystal layer 20 is filled with liquid crystal molecules.
- liquid crystal molecules used for filling the conventional flat display panel are all suitable for the present invention.
- the materials used for manufacturing the conventional flat display panel are suitable for the color filter substrate 30 of the present invention.
- the insulation layer 16 on the array substrate 10 includes multiple first regions 162 and multiple second regions 164 , wherein, the first regions 162 and the second regions 164 are disposed alternately. Besides, a thickness of the first regions 162 and a thickness of the second regions 164 are different. Furthermore, multiple pixel electrodes 18 are respectively disposed on the first regions of the insulation layer 16 . Because thicknesses of the first regions 162 and thicknesses of the second regions 164 are different, an electric field strength between the pixel electrodes and an electric field strength above the pixel electrodes 18 are adjusted in order to increase the display quality of the flat display panel.
- a difference of the thickness of the first regions 162 and the thickness of the second region 164 can be set such that a difference of the electric field strength between pixel electrodes 18 and the electric field strength above the pixel electrodes 18 is in a predetermined range.
- the predetermined range means that according to an actual requirement, the difference of the electric field strength between pixel electrodes 18 and the electric field strength above the pixel electrodes 18 is in a controllable electric field strength range.
- a difference of the thickness of the first regions 162 and the thickness of the second regions 164 is also within a range.
- a range of the difference of the thickness of the first regions 162 and the thickness of the second regions 164 is adjusted such that the difference of the electric field strength between pixel electrodes 18 and the electric field strength above the pixel electrodes 18 is maintained in a predetermined range. Furthermore, the difference of the thickness of the first regions 162 and the thickness of the second regions 164 is set such that the difference of the electric field strength between pixel electrodes 18 and the electric field strength above the pixel electrodes 18 is zero. At this time, the portion between pixel electrodes 18 and the portion above the pixel electrodes 18 does not generate the alternate bright and dark situation and the flat display panel does not generate the water ripple phenomenon.
- the thickness of the first regions 162 and the thickness of the second region 164 are not limited, the only requirement is that the difference of the thickness of the first regions 162 and the thickness of the second regions 164 can achieve maintaining the difference of the electric field strength between the pixel electrodes 18 and the electric field strength above the pixel electrodes 18 in a predetermined range.
- FIG. 3 is an electric field distribution diagram of the flat display panel shown in FIG. 2 .
- a thickness of the first regions 162 is h 1 and a thickness of the second regions 164 is h 2 .
- h 1 >h 2 a difference of the thickness of the first regions 162 and the thickness of the second region 164 is ⁇ h.
- the difference of the thickness of the first regions 162 and the thickness of the second region 164 being ⁇ h
- the difference of the electric field strength between pixel electrodes 18 and the electric field strength above the pixel electrodes 18 is maintained in a predetermined range, and even zero so that an electric field distribution between pixel electrodes 18 and above the pixel electrodes 18 is uniform in order to increase the display effect.
- the aperture ratio between the pixel electrodes 18 is increased such that a light transmittance between the pixel electrodes 18 is also increased correspondingly. Accordingly, the brightness of the display area between pixel electrodes 18 in increased in order to increase the display brightness of the flat display panel 100 .
- the thickness h 1 of the first regions 162 of the insulation layer 16 of the array substrate 100 is smaller than the thickness h 2 of the second region 164 , that is, h 1 ⁇ h 2 .
- a material for manufacturing the first regions 162 of the insulation layer 16 and a material for manufacturing the second regions 164 are different.
- a dielectric constant of the first regions 162 is much greater than a dielectric constant of the second region 164 .
- the dielectric constant is inversely proportional to the electric field strength
- the dielectric constant of the first regions 162 is high enough and the dielectric constant of the second regions 164 is low enough, even the thickness h 1 of the first regions 162 is smaller than the thickness h 2 of the second regions 164 , the difference of the electric field strength between pixel electrodes 18 on the insulation layer 16 and the electric field strength above the pixel electrode 18 can also be maintained in a predetermined range.
- the insulation layer of the array substrate includes multiple first regions and multiple second regions, wherein, the first regions and the second regions are disposed alternately. Besides, the thickness of the first regions and the thickness of the second regions are different. Then, multiple pixel electrodes are respectively disposed on the first region of the insulation layer. Because the thickness of the first regions and the thickness of the second regions are different, through adjusting the thickness of the first regions and the thickness of the second regions, the electric field strength between pixel electrodes and the electric field strength above the pixel electrode can be adjusted.
- the difference of the electric field strength between pixel electrodes and the electric field strength above the pixel electrode is maintained in a predetermined range, and even zero such that the brightness between pixel electrodes and the brightness above the pixel electrodes are uniform in order to avoid generating a water ripple phenomenon in a flat display panel so as to increase the display quality and user experience.
- the aperture ratio between pixel electrodes is also increased such that the light transmittance is also increased correspondingly in order to increase the brightness between pixel electrodes of the flat display panel. Accordingly, the display brightness of the flat display panel is increased in order to correspondingly decrease the brightness of the backlight plate, save power and save cost.
- the present invention also provides an array substrate, and the array substrate is anyone of the array substrates described at above embodiments.
- FIG. 4 is a flow chart of a manufacturing method of an array substrate according to an embodiment of the present invention.
- the manufacturing method includes the following steps:
- S 101 sequentially forming a common electrode, an insulation layer and a pixel electrode layer.
- the common electrode can be made by a transparent conductive material or other materials which can manufacture conventional common electrodes such as metal materials, etc.
- the materials used for manufacturing the conventional insulation layers of the array substrates are suitable for the insulation layer of the present invention.
- the material of the insulation layer can utilize a same material or a material that is mixed by different materials;
- the pixel electrode layer can be made by a transparent conductive material or other materials that can manufacture the conventional pixel electrodes such as polysilicon, etc.
- the photoresist can be a conventional photosensitive material such as a positive photoresist or a negative photoresist.
- the first etching method is anyone of the etching methods that are used for the conventional liquid crystal devices.
- the wet etching, the dry etching, the photolithographic etching, the X ray etching, the electric beam etching, or the ion beam etching are anyone of the etching methods that are used for the conventional liquid crystal devices.
- the wet etching, the dry etching, the photolithographic etching, the X ray etching, the electric beam etching, or the ion beam etching are anyone of the etching methods that are used for the conventional liquid crystal devices.
- the wet etching, the dry etching, the photolithographic etching, the X ray etching, the electric beam etching, or the ion beam etching are anyone of the etching methods that are used for the conventional liquid crystal devices.
- the first etching method is the wet etching and utilizing the wet etching to continuously etch the pixel electrode layer below the patterned photoresist layer so that the pixel electrode layer forms multiple spaced pixel electrodes.
- the second etching method is anyone of the etching methods that are used for the conventional liquid crystal devices.
- the wet etching, the dry etching, the photolithographic etching, the X ray etching, the electric beam etching, or the ion beam etching is anyone of the etching methods that are used for the conventional liquid crystal devices.
- the wet etching, the dry etching, the photolithographic etching, the X ray etching, the electric beam etching, or the ion beam etching is anyone of the etching methods that are used for the conventional liquid crystal devices.
- the wet etching, the dry etching, the photolithographic etching, the X ray etching, the electric beam etching, or the ion beam etching is anyone of the etching methods that are used for the conventional liquid crystal devices.
- the second etching method is the dry etching and utilizing the dry etching to continuously etch the insulation layer below any two of the pixel electrodes such that the insulation layer forms the multiple alternate first regions and second regions.
- a thickness of the first regions and a thickness of the second regions are different.
- the manufacturing method of the present embodiment only requires etching the insulation layer using the second etching method after using a first etching method to etch the pixel electrode layer in order to form the multiple spaced pixel electrodes in the conventional art. Accordingly, the insulation layer can form multiple alternate first regions and second regions having different thicknesses.
- the manufacturing method can adjust the thickness of the first regions and the thickness of the second regions of the insulation layer in order to adjust the electric field strength between pixel electrodes and the electric field strength above the pixel electrodes, which is simple, quick and can be widely applied.
- the manufacturing method further includes a step of utilizing a patterned photoresist layer and a second etching method to etch the insulation layer.
- the thickness of the first regions and the thickness of the second regions are different.
- a difference of the thickness of the first regions and the thickness of the second regions is set such that the electric field strength between pixel electrodes and the electric field strength above pixel electrodes is maintained in a predetermined range.
- the predetermined range means that according to an actual requirement, the difference of the electric field strength between pixel electrodes and the electric field strength above the pixel electrodes is in a controllable electric field strength range.
- a difference of the thickness of the first regions and the thickness of the second regions is also within a range.
- a range of the difference of the thickness of the first regions and the thickness of the second regions is adjusted such that the difference of the electric field strength between pixel electrodes and the electric field strength above the pixel electrodes is maintained in a predetermined range
- the manufacturing method further includes a step of controlling speed and time of the second etching method in order to ensure that a difference of the thickness of the first regions and the thickness of the second region can be set such that a difference of the electric field strength between pixel electrodes and the electric field strength above the pixel electrodes is in a predetermined range.
- step S 105 the manufacturing method further includes a step of setting the difference of the electric field strength between pixel electrodes and the electric field strength above the pixel electrodes to be zero. At this time, the portion between pixel electrodes and the portion above the pixel electrodes does not generate the alternate bright and dark situation and the flat display panel does not generate the water ripple phenomenon.
- the thickness of the first regions and the thickness of the second region are not limited, the only requirement is that the difference of the thickness of the first regions and the thickness of the second regions can achieve maintaining the difference of the electric field strength between the pixel electrodes and the electric field strength above the pixel electrodes in a predetermined range.
- the thickness of the first regions is greater than the thickness of the second region, or the thickness of the first regions is smaller than the thickness of the second region.
- the manufacturing method further includes a step of removing the photoresist layer.
- the manufacturing method of the present embodiment only requires etching the insulation layer using the second etching method after using a first etching method to etch the pixel electrode layer in order to form the multiple spaced pixel electrodes in the conventional art. Accordingly, the insulation layer can form multiple alternate first regions and second regions having different thicknesses. The manufacturing method can adjust the thickness of the first regions and the thickness of the second regions of the insulation layer in order to adjust the electric field strength between pixel electrodes and the electric field strength above the pixel electrodes.
- the difference of the electric field strength between pixel electrodes and the electric field strength above the pixel electrode is maintained in a predetermined range, and even zero such that the brightness between pixel electrodes and the brightness above the pixel electrodes are uniform in order to avoid generating a water ripple phenomenon in a flat display panel so as to increase the display quality and user experience.
- the manufacturing method of the array substrate of the present invention is simple, quick and can be widely applied in the industry production.
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Abstract
Description
Claims (10)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510148758 | 2015-03-31 | ||
| CN201510148758.4A CN104882448B (en) | 2015-03-31 | 2015-03-31 | The manufacture method of array base palte, two-d display panel and array base palte |
| CN201510148758.4 | 2015-03-31 | ||
| PCT/CN2015/076727 WO2016155041A1 (en) | 2015-03-31 | 2015-04-16 | Array substrate, flat display panel and manufacturing method for array substrate |
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| Publication Number | Publication Date |
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| US20160291418A1 US20160291418A1 (en) | 2016-10-06 |
| US9519192B2 true US9519192B2 (en) | 2016-12-13 |
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| US14/647,803 Expired - Fee Related US9519192B2 (en) | 2015-03-31 | 2015-04-16 | Array substrate, flat display panel and manufacturing method for the same |
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| Country | Link |
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| US (1) | US9519192B2 (en) |
| CN (1) | CN104882448B (en) |
| WO (1) | WO2016155041A1 (en) |
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| CN106950765A (en) | 2016-01-07 | 2017-07-14 | 中华映管股份有限公司 | Pixel structure of liquid crystal display panel and manufacturing method thereof |
| CN114755854B (en) | 2022-04-27 | 2024-03-22 | 广州华星光电半导体显示技术有限公司 | Display device |
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| TW387997B (en) * | 1997-12-29 | 2000-04-21 | Hyundai Electronics Ind | Liquid crystal display and fabrication method |
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| KR101307965B1 (en) * | 2007-02-16 | 2013-09-12 | 엘지디스플레이 주식회사 | An array substrate for In-Plane switching mode LCD and method of fabricating of the same |
| CN101325201B (en) * | 2007-06-13 | 2011-04-13 | 北京京东方光电科技有限公司 | Array substrate structure of transparent film transistor and manufacturing method thereof |
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2015
- 2015-03-31 CN CN201510148758.4A patent/CN104882448B/en active Active
- 2015-04-16 US US14/647,803 patent/US9519192B2/en not_active Expired - Fee Related
- 2015-04-16 WO PCT/CN2015/076727 patent/WO2016155041A1/en not_active Ceased
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| US6373541B1 (en) * | 1998-08-07 | 2002-04-16 | Matsushita Electric Industrial Co., Ltd. | Reflection type liquid crystal display element |
| US7075602B2 (en) * | 2001-10-15 | 2006-07-11 | Sharp Kabushiki Kaisha | Substrate for reflective liquid crystal display device and reflective liquid crystal display device using the same wherein the reflective surface is a wrinkled pattern of small mirrors |
| US20110013121A1 (en) * | 2001-11-08 | 2011-01-20 | Dai Nippon Printing Co., Ltd. | Phase difference layer laminated body for three dimensional liquid crystal display device and manufacturing method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20160291418A1 (en) | 2016-10-06 |
| CN104882448A (en) | 2015-09-02 |
| CN104882448B (en) | 2018-03-13 |
| WO2016155041A1 (en) | 2016-10-06 |
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