CN101546733B - Method for manufacturing TFT-LCD array substrate and color film substrate - Google Patents
Method for manufacturing TFT-LCD array substrate and color film substrate Download PDFInfo
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- CN101546733B CN101546733B CN2008101029942A CN200810102994A CN101546733B CN 101546733 B CN101546733 B CN 101546733B CN 2008101029942 A CN2008101029942 A CN 2008101029942A CN 200810102994 A CN200810102994 A CN 200810102994A CN 101546733 B CN101546733 B CN 101546733B
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Abstract
The invention relates to a method for manufacturing a TFT-LCD array substrate and a color film substrate. The method for manufacturing the array substrate comprises the steps: an array structural layer comprising gate electrodes, source electrodes, drain electrodes and deactivation layers is formed on the substrate, a pixel electrode layer and an organic layer are deposited on the array structural layer in sequence, a layer of photoresist is coated on the array structural layer, and a pixel electrode pattern and an array gray lug boss which is formed by the organic layer and arranged on the pixel electrode are formed on the array structural layer by adopting a grey tone or shadow tone mask plate and by the processes of exposing, developing, etching and ashing. The method adopts the grey tone or shadow tone mask plate and integrates the two pattern-forming processes for forming the pixel electrode and the array lug boss into one pattern-forming process, thereby increasing the production efficiency and ensuring the product characteristics of the TFT-LCD array substrate.
Description
Technical field
The present invention relates to a kind of manufacture method of liquid crystal indicator, particularly a kind of based on the TFT-LCD array base palte of MVA pattern and the manufacture method of color membrane substrates.
Background technology
Thin-film transistor LCD device (Thin Film Transistor Liquid CrystalDisplay, be called for short TFT-LCD) have characteristics such as volume is little, low in energy consumption, radiationless, manufacturing cost is relatively low, occupied leading position in current panel display apparatus market.Along with the expansion gradually of TFT-LCD application, prior art has proposed a kind of TFT-LCD based on the MVA pattern that is applicable to large scale display.It is a kind of have high-contrast, display unit of advantage such as response and wide visual angle fast that picture element is cut apart vertical orientation (Multi-Domain Vertical Alignment, be called for short MVA) pattern, can make large screen display device have better picture quality.
Figure 19 is the sectional view of prior art based on the TFT-LCD of MVA pattern, is taken from the viewing area, and Figure 20 is the plane graph of array base palte in Figure 19 structure.As Figure 19 and shown in Figure 20, TFT-LCD is made of array base palte, color membrane substrates and the liquid crystal layer that is between the two.Array base palte comprises the array structure layer 10 that is formed on the substrate, be formed with several horizontal grid lines 1 and several data wire 2 longitudinally in the array structure layer 10, the intersection of grid line 1 and data wire 2 forms thin-film transistor (TFT) 3, and define several pixel regions, be formed with pixel electrode 4 in each pixel region.Be formed with a series of array projectioies 13 on the pixel electrode 4 of array structure layer 10, cover on pixel electrode 4 and a series of array projection 13 by one deck array alignment films 14 at last.Color membrane substrates comprises the color membrane structure layer 20 that is formed on the substrate, be formed with in the color membrane structure layer 20 black matrix, color resin (comprising red resin, green resin and blue resins) and with array base palte on pixel electrode 4 corresponding public electrodes 5.Be formed with a series of color film projectioies 23 equally on the public electrode 5 of color membrane structure layer 20, cover on public electrode 5 and a series of color film projection 23 by the color film alignment films 24 of one deck at last.Array projection 13 and color film projection 23 are used to control the arragement direction of liquid crystal, and the slope of projection can make liquid crystal molecule form multidomain, and this alignment technology is called automatic farmland formation technology (Automatic Domain Formation is called for short ADF).Array projection 13 and color film projection 23 can make liquid crystal form multidomain by the tilt angle that changes liquid crystal, the cross section of projection is generally triangle, for liquid crystal molecule near protruding sidewall, no matter whether power up, the projection sidewall inclination angle Ah so that liquid crystal molecule tilt towards ideal orientation, concerning away from the liquid crystal molecule of protruding sidewall, only after powering up, the inclination angle of protruding sidewall and the electric field of side just can make liquid crystal molecule to ideal orientation deflection.As shown in figure 19, when not powering up, the major axis of liquid crystal molecule 6 only slightly tilts at the liquid crystal molecule 6 near the color film projection 23 on projection 13 of the array on the array base palte and the color membrane substrates perpendicular to array base palte and color membrane substrates, and light can't pass two polarizers up and down this moment.After powering up, near the color film projection 23 on array on array base palte projection 13 and the color membrane substrates liquid crystal molecules drive other liquid crystal molecules rapidly and turn to state perpendicular to convex surfaces, be that molecular long axis favours screen, realize the light modulation thereby transmissivity is risen.
At present, in the TFT-LCD production technology of prior art based on the MVA pattern, form on the array base palte pixel electrode and array projection two photoetching, etchings, peel off and operation such as cleaning in form, form public electrode and color film projection on the color membrane substrates and also be two photoetching, etchings, peel off with matting in form, production process is many, time is long, has reduced the production efficiency of TFT-LCD to a great extent.
The manufacture method that the purpose of this invention is to provide a kind of TFT-LCD array base palte and color membrane substrates, the projection on array base palte and the color membrane substrates is finished by a composition technology, enhances productivity.
To achieve these goals, the invention provides a kind of manufacture method of TFT-LCD array base palte, comprising:
Step 121, on described array structure layer, deposit one deck successively and be used to form the organic layer that pixel electrode pixel electrode layer and one deck are used to form the array projection;
Step 122, on described organic layer coating one deck photoresist;
Step 123, adopt gray tone or half-tone mask plate that described photoresist is exposed and develops, form unexposed photoresist pattern, partly expose to the sun photoresist pattern and complete exposure area;
Step 124, by the first time etching technics remove organic layer and the pixel electrode layer that is exposed to photoresist outside, form organic layer and pixel electrode layer pattern;
Step 125, by the first time cineration technics remove photoresist except that the unexposed photoresist pattern;
Step 126, by the second time etching technics remove the organic layer of unexposed photoresist pattern with exterior domain, form protruding figure;
Step 127, by the second time cineration technics ash melt remaining photoresist.
Described step 11 is specially:
Step 111, on substrate deposition one deck grid metal level, form gate electrode and grid line figure by composition technology;
Step 112, on the substrate of completing steps 111 successive sedimentation gate insulation layer and active layer, form active layer pattern by composition technology;
Step 113, on the substrate of completing steps 112 deposition layer of metal film, form data wire, source electrode and drain electrode figure by composition technology;
Step 114, on the substrate of completing steps 113 deposition one deck passivation layer, above described drain electrode, form passivation layer via hole by composition technology.
The protruding figure cross section that forms in the described step 126 is trapezoidal.
To achieve these goals, the present invention also provides a kind of manufacture method of TFT-LCD color membrane substrates, comprising:
Step 221, on described color membrane structure layer, deposit one deck successively and be used to form the common electrode layer of public electrode and the organic layer that one deck is used to form color film projection;
Step 222, on described organic layer coating one deck photoresist;
Step 223, employing gray tone or half-tone mask plate expose to described photoresist and develop, and form unexposed photoresist pattern, part exposed photoresist pattern and complete exposure area;
Step 224, by the first time etching technics remove organic layer and the common electrode layer that is exposed to photoresist outside, form organic layer and public electrode layer pattern;
Step 225, by the first time cineration technics remove photoresist except that the unexposed photoresist pattern;
Step 226, by the second time etching technics remove the organic layer of unexposed photoresist pattern with exterior domain, form protruding figure;
Step 227, by the second time cineration technics ash melt remaining photoresist.
Described step 21 can for: the black matrix layer of deposition one deck on substrate forms black matrix figure by composition technology; Form red resin, green resin and blue resins figure on the substrate of above-mentioned steps finishing.Described step 21 also can for: on substrate, form red resin, green resin and blue resins figure; Finishing the black matrix layer of deposition one deck on the substrate of above-mentioned steps, form black matrix figure by composition technology.
The protruding figure cross section that forms in the described step 226 is trapezoidal.
The present invention proposes a kind of manufacture method of the TFT-LCD array base palte based on the MVA pattern, by adopting gray tone or half-tone mask plate, it is composition technology with two road composition process integrations of array projection that prior art is formed pixel electrode, when enhancing productivity, protect the product performance of having levied the TFT-LCD array base palte.Simultaneously, the invention allows for a kind of manufacture method of the TFT-LCD color membrane substrates based on the MVA pattern, by adopting gray tone or half-tone mask plate, it is composition technology with two road composition process integrations of color film projection that prior art is formed public electrode, when enhancing productivity, guaranteed the product performance of TFT-LCD color membrane substrates.Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the flow chart of the manufacture method of TFT-LCD array base palte of the present invention;
Fig. 2 is for forming the schematic diagram behind pixel electrode layer, organic layer and the photoresist in the manufacture method of array base palte of the present invention;
Fig. 3 forms the schematic diagram after the exposure imaging technology in the array projection for the manufacture method of array base palte of the present invention;
Fig. 4 forms in the array projection schematic diagram after the etching for the first time for the manufacture method of array base palte of the present invention;
Fig. 5 forms in the array projection schematic diagram behind the photoresist ashing for the first time for the manufacture method of array base palte of the present invention;
Fig. 6 forms in the array projection schematic diagram after the etching for the second time for the manufacture method of array base palte of the present invention;
Fig. 7 forms the schematic diagram after the optical cement ashing for the second time in the array projection for the manufacture method of array base palte of the present invention;
Fig. 8 forms the schematic diagram behind the shaping process in the array projection for the manufacture method of array base palte of the present invention;
Fig. 9 is the flow chart of the manufacture method of TFT-LCD color membrane substrates of the present invention;
Figure 10 is for forming the schematic diagram behind common electrode layer, organic layer and the photoresist in the manufacture method of color membrane substrates of the present invention;
Figure 11 forms the schematic diagram after the exposure imaging technology in the array projection for the manufacture method of color membrane substrates of the present invention;
Figure 12 forms in the array projection schematic diagram after the etching for the first time for the manufacture method of color membrane substrates of the present invention;
Figure 13 forms in the array projection photoresist ashing for the first time for the manufacture method of color membrane substrates of the present invention
Figure 14 forms in the array projection schematic diagram after the etching for the second time for the manufacture method of color membrane substrates of the present invention;
Figure 15 forms in the array projection schematic diagram behind the photoresist ashing for the second time for the manufacture method of color membrane substrates of the present invention;
Figure 16 forms the schematic diagram behind the shaping process in the array projection for the manufacture method of color membrane substrates of the present invention;
Figure 17 is the structural representation of the half-tone mask plate that uses in the exposure technology of the present invention;
Figure 18 is the structural representation of the gray mask plate that uses in the exposure technology of the present invention;
Figure 19 is the sectional view of prior art based on the TFT-LCD of MVA pattern;
Figure 20 is the plane graph of array base palte in Figure 19 structure.
Description of reference numerals:
The 1-grid line; The 2-data wire; The 3-thin-film transistor;
The 4-pixel electrode; The 5-public electrode; The 6-liquid crystal molecule;
10-array structure layer; The 11-pixel electrode layer; The 12-protruding figure;
13-array projection; The color membrane structure layer of 20-; The 21-common electrode layer;
The 22-protruding figure; The color film projection of 23-; The 30-organic layer;
The 40-photoresist; 40a-unexposed photoresist pattern; 40b-part exposed photoresist pattern;
The 50-quartz base plate; The light tight zone of 50a-; The semi-transparent zone of 50b-;
The complete transmission region of 50c-.
Embodiment
Fig. 1 is the flow chart of the manufacture method of TFT-LCD array base palte of the present invention, is specially:
The invention provides a kind of manufacture method of the TFT-LCD array base palte based on the MVA pattern, by adopting gray tone or half-tone mask plate, it is composition technology with two road composition process integrations of array projection that prior art is formed pixel electrode, when enhancing productivity, still guaranteed the product performance of TFT-LCD array base palte.The alleged composition technology of the present invention comprises technologies such as photoresist coating, mask, exposure, etching.
Step 11 is specially: at first, adopt the method for sputter or thermal evaporation, at the last deposition of substrate (as glass substrate or quartz base plate) one layer thickness be
The grid metal level, adopt the gate electrode mask plate grid metal level to be carried out etching by composition technology, on certain zone of substrate, form gate electrode and grid line figure, what form simultaneously can also have public electrode wire or shield bars figure.Afterwards, utilize chemical vapor deposition method consecutive deposition thickness on substrate to be
Gate insulation layer and thickness be
Active layer, active layer comprises semiconductor layer (as amorphous silicon layer) and doping semiconductor layer (as doped amorphous silicon layer), after adopting active layer mask board to explosure active layer is carried out etching, form active layer pattern, be the silicon isolated island, and the gate insulation layer between grid metal level and the active layer can play the effect that stops etching.Next, adopt and preparation gate electrode and the similar method of grid line, deposit one deck is similar to the grid metal layer thickness and is on substrate
Metallic film adopts the source-drain electrode mask plate to form data wire, source electrode and drain electrode on certain zone, and source electrode and drain electrode contact with the two ends of active layer respectively, form the TFT raceway groove.Subsequently, deposition one layer thickness is on whole base plate
Passivation layer, adopt the passivation layer mask plate by exposure and etching technics, form passivation layer via hole in the drain electrode position, passivation layer via hole exposes drain electrode, forms array structure layer of the present invention.
Fig. 2 is for forming the schematic diagram behind pixel electrode layer, organic layer and the photoresist in the manufacture method of array base palte of the present invention.On array structure layer 10, deposit the organic layer 30 that pixel electrode layer (metal-oxide film) 11 that one deck is used to form pixel electrode and one deck are used to form the array projection successively, be coated with the photoresist 40 that one deck is used to expose subsequently, as shown in Figure 2.In the present embodiment, the thickness of photoresist 40 is preferably 1 μ m～10 μ m.
Fig. 3 forms the schematic diagram after the exposure imaging technology in the array projection for the manufacture method of array base palte of the present invention.Adopt gray tone or half-tone mask plate that photoresist 40 is exposed, make photoresist 40 form unexposed area, partial exposure area and complete exposure area, after the development, the photoresist of unexposed area is kept, form unexposed photoresist pattern 40a, the photoresist of partial exposure area is partly removed, and forms part exposed photoresist pattern 40b, the photoresist of complete exposure area is completely removed, as shown in Figure 3.In the present embodiment, when the thickness of photoresist 40 was 1 μ m～10 μ m, the transmitance of partial exposure area was preferably 10%～50% in gray tone or the half-tone mask plate.
Fig. 4 forms in the array projection schematic diagram after the etching for the first time for the manufacture method of array base palte of the present invention.Remove organic layer 30 and the pixel electrode layer 11 that is exposed to the photoresist outside by etching technics, form organic layer and pixel electrode layer pattern, as shown in Figure 4.In this step, can adopt and do the etching technics of carving organic layer, the plain electrode layer of the wet imagery in back earlier, also can all do the etching technics of carving.
Fig. 5 forms in the array projection schematic diagram behind the photoresist ashing for the first time for the manufacture method of array base palte of the present invention.By cineration technics unwanted photoresist ashing is fallen, remove the photoresist except that unexposed photoresist pattern 40a, as shown in Figure 5.
Fig. 6 forms in the array projection schematic diagram after the etching for the second time for the manufacture method of array base palte of the present invention.Remove zone that unexposed photoresist pattern 40a the protected organic layer 30 with exterior domain by etching technics, forming cross section is trapezoidal protruding figure 12, as shown in Figure 6.
Fig. 7 forms in the array projection schematic diagram behind the photoresist ashing for the second time for the manufacture method of array base palte of the present invention.By cineration technics unexposed photoresist pattern 40a ash is melted, retaining cross section is trapezoidal protruding figure 12, as shown in Figure 7.
On the technique scheme basis, the manufacture method of TFT-LCD array base palte of the present invention can also comprise shaping process, and forming cross section by shaping process is triangular hill.Fig. 8 forms the schematic diagram behind the shaping process in the array projection for the manufacture method of array base palte of the present invention, and it is leg-of-mutton array projection 13 that shaping process is shaped as cross section with protruding figure 12, as shown in Figure 8.In actual the use, shaping process can select different etching modes to carry out according to the chemical property of projection.In fact, cross section is for liquid crystal molecule provides an angle of inclination for trapezoidal or leg-of-mutton purpose, so shaping process only is an optional process.
Fig. 9 is the flow chart of the manufacture method of TFT-LCD color membrane substrates of the present invention, is specially:
The invention provides a kind of manufacture method of the TFT-LCD color membrane substrates based on the MVA pattern, by adopting gray tone or half-tone mask plate, it is composition technology with two road composition process integrations of color film projection that prior art is formed public electrode, when enhancing productivity, still guaranteed the product performance of TFT-LCD color membrane substrates.
Figure 10 is for forming the schematic diagram behind common electrode layer, organic layer and the photoresist in the manufacture method of color membrane substrates of the present invention.On color membrane structure layer 20, deposit one deck successively and be used to form the common electrode layer 21 of public electrode and the organic layer 30 that one deck is used to form color film projection, be coated with the photoresist 40 that one deck is used to expose subsequently, as shown in figure 10.In the present embodiment, the thickness of photoresist 40 is preferably 1 μ m～10 μ m.
Figure 11 forms the schematic diagram after the exposure imaging technology in the array projection for the manufacture method of color membrane substrates of the present invention.Adopt gray tone or half-tone mask plate that photoresist 40 is exposed, make photoresist 40 form unexposed area, partial exposure area and complete exposure area, after the development, the photoresist of unexposed area is kept, form unexposed photoresist pattern 40a, the photoresist of partial exposure area is partly removed, and forms part exposed photoresist pattern 40b, the photoresist of complete exposure area is completely removed, as shown in figure 11.In the present embodiment, when the thickness of photoresist 40 was 1 μ m～10 μ m, the transmitance of partial exposure area was preferably 10%～50% in gray tone or the half-tone mask plate.
Figure 12 forms in the array projection schematic diagram after the etching for the first time for the manufacture method of color membrane substrates of the present invention.Remove organic layer 30 and the common electrode layer 21 that is exposed to the photoresist outside by etching technics, form organic layer and public electrode layer pattern, as shown in figure 12.In this step, can adopt to do earlier and carve organic layer, the wet etching technics of carving common electrode layer in back, also can all do the etching technics of carving.
Figure 13 forms in the array projection schematic diagram behind the photoresist ashing for the first time for the manufacture method of color membrane substrates of the present invention.By cineration technics unwanted photoresist ashing is fallen, remove the photoresist except that unexposed photoresist pattern 40a, as shown in figure 13.
Figure 14 forms in the array projection schematic diagram after the etching for the second time for the manufacture method of color membrane substrates of the present invention.Remove the organic layer 30 of unexposed photoresist pattern 40a with exterior domain by etching technics, forming cross section is trapezoidal protruding figure 22, as shown in figure 14.
Figure 15 forms in the array projection schematic diagram behind the photoresist ashing for the second time for the manufacture method of color membrane substrates of the present invention.By cineration technics unexposed photoresist pattern 40a ash is melted, retaining cross section is trapezoidal protruding figure 22, as shown in figure 15.
On the technique scheme basis, the manufacture method of TFT-LCD color membrane substrates of the present invention can also comprise shaping process, and forming cross section by shaping process is triangular hill.Figure 16 forms the schematic diagram behind the shaping process in the array projection for the manufacture method of color membrane substrates of the present invention, and by shaping process protruding figure 22 being shaped as cross section is leg-of-mutton color film projection 23, as shown in figure 16.In actual the use, shaping process can select different etching modes to carry out according to the chemical property of projection.In fact, cross section is for liquid crystal molecule provides an angle of inclination for trapezoidal or leg-of-mutton purpose, so shaping process only is an optional process.
In the foregoing description of the manufacture method of the manufacture method of array base palte of the present invention and color membrane substrates, half-tone mask plate that resist exposure adopted or gray mask plate all adopt prior art constructions.Figure 17 is the structural representation of the half-tone mask plate that uses in the exposure technology of the present invention, half-tone mask plate comprises quartz base plate 50, form light tight regional 50a by the light tight metals such as chromium that are arranged on the quartz base plate 50, the slit grating structure of being made up of the sheet metal chromium that is arranged on the quartz base plate 50 forms semi-transparent regional 50b, forms complete transmission region 50c by the quartz base plate 50 that exposes.During mask exposure, light tight regional 50a is corresponding to array projection or zone, color film projection position, semi-transparent regional 50b is corresponding to pixel electrode or zone, public electrode position, fully transmission region 50c corresponding to pixel electrode or public electrode with exterior domain.When actual production, the thickness of sheet metal chromium and the width ratio of slit are 0.2～5.In addition, light tight regional 50a also can be formed by the slit grating structure that sheet metal chromium is formed, but the width ratio of the thickness of sheet metal chromium and slit is 5～0.2.Figure 18 is the structural representation of the gray mask plate that uses in the exposure technology of the present invention, the gray mask plate comprises quartz base plate 50, form light tight regional 50a by the light tight metals such as chromium that are arranged on the quartz base plate 50, form semi-transparent regional 50b by being arranged on metal oxide such as chromium oxide on the quartz base plate 50 or other translucent metal oxides, form complete transmission region 50c by the quartz base plate 50 that exposes.During mask exposure, light tight regional 50a is corresponding to array projection or zone, color film projection position, semi-transparent regional 50b is corresponding to pixel electrode or zone, public electrode position, fully transmission region 50c corresponding to pixel electrode or public electrode with exterior domain.When actual production, the oxide component that can be by controlling semi-transparent regional 50b or the oxide thickness in semi-transparent zone are controlled the transmitance in semi-transparent zone.
It should be noted that at last: above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.
Claims (10)
1. the manufacture method of a TFT-LCD array base palte is characterized in that, comprising:
Step 11, on substrate, form array structure layer with gate electrode, source electrode, drain electrode and passivation layer;
Step 12, specifically comprise:
Step 121, on described array structure layer, deposit one deck successively and be used to form the pixel electrode layer of pixel electrode and the organic layer that one deck is used to form the array projection;
Step 122, on described organic layer coating one deck photoresist;
Step 123, employing gray tone or half-tone mask plate expose to described photoresist and develop, and form unexposed photoresist pattern, part exposed photoresist pattern and complete exposure area;
Step 124, by the first time etching technics remove organic layer and the pixel electrode layer that is exposed to photoresist outside, form organic layer and pixel electrode layer pattern;
Step 125, by the first time cineration technics remove photoresist except that the unexposed photoresist pattern;
Step 126, by the second time etching technics remove the organic layer of unexposed photoresist pattern with exterior domain, form protruding figure;
Step 127, by the second time cineration technics ash melt remaining photoresist.
2. the manufacture method of TFT-LCD array base palte according to claim 1 is characterized in that, described step 11 is specially:
Step 111, on substrate deposition one deck grid metal level, form gate electrode and grid line by composition technology;
Step 112, on the substrate of completing steps 111 successive sedimentation gate insulation layer and active layer, form active layer pattern by composition technology;
Step 113, on the substrate of completing steps 112 deposition layer of metal film, form data wire, source electrode and drain electrode figure by composition technology;
Step 114, on the substrate of completing steps 113 deposition one deck passivation layer, above described drain electrode, form passivation layer via hole by composition technology.
3. the manufacture method of TFT-LCD array base palte according to claim 1 is characterized in that, the protruding figure cross section that forms in the described step 126 is trapezoidal.
4. the manufacture method of TFT-LCD array base palte according to claim 1, it is characterized in that, described step 123 is specially: adopt gray tone or half-tone mask plate that described photoresist is exposed, make photoresist form unexposed area, partial exposure area and complete exposure area, remove the photoresist of complete exposure area fully by developing, the photoresist that part is removed partial exposure area forms part exposed photoresist pattern, and the photoresist that keeps unexposed area forms the unexposed photoresist pattern.
5. the manufacture method of TFT-LCD array base palte according to claim 1, it is characterized in that, described step 124 is specially: by doing the etching technics of carving organic layer, the plain electrode layer of the wet imagery in back earlier or all doing the etching technics of carving and remove organic layer and the pixel electrode layer that is exposed to the photoresist outside, form organic layer and pixel electrode layer pattern.
6. the manufacture method of a TFT-LCD color membrane substrates is characterized in that, comprising:
Step 21, on substrate, form color membrane structure layer with black matrix figure and color resin figure;
Step 22, specifically comprise:
Step 221, on described color membrane structure layer, deposit one deck successively and be used to form the common electrode layer of public electrode and the organic layer that one deck is used to form color film projection;
Step 222, on described organic layer coating one deck photoresist;
Step 223, employing gray tone or half-tone mask plate expose to described photoresist and develop, and form unexposed photoresist pattern, part exposed photoresist pattern and complete exposure area;
Step 224, by the first time etching technics remove organic layer and the common electrode layer that is exposed to photoresist outside, form organic layer and public electrode layer pattern;
Step 225, by the first time cineration technics remove photoresist except that the unexposed photoresist pattern;
Step 226, by the second time etching technics remove the organic layer of unexposed photoresist pattern with exterior domain, form protruding figure;
Step 227, by the second time cineration technics ash melt remaining photoresist.
7. the manufacture method of TFT-LCD color membrane substrates according to claim 6 is characterized in that, described step 21 is specially: the black matrix layer of deposition one deck on substrate forms black matrix figure by composition technology; Form red resin, green resin and blue resins figure on the substrate of above-mentioned steps finishing, or described step 21 is specially: on substrate, form red resin, green resin and blue resins figure; Finishing the black matrix layer of deposition one deck on the substrate of above-mentioned steps, form black matrix figure by composition technology.
8. the manufacture method of TFT-LCD color membrane substrates according to claim 6, its feature are at son, and the protruding figure cross section that forms in the described step 226 is trapezoidal.
9. the manufacture method of TFT-LCD color membrane substrates according to claim 6, it is characterized in that, described step 223 is specially: adopt gray tone or half-tone mask plate that described photoresist is exposed, make photoresist form unexposed area, partial exposure area and complete exposure area, remove the photoresist of complete exposure area fully by developing, the photoresist that part is removed partial exposure area forms part exposed photoresist pattern, and the photoresist that keeps unexposed area forms the unexposed photoresist pattern.
10. the manufacture method of TFT-LCD color membrane substrates according to claim 6, it is characterized in that, described step 224 is specially: etching technics or all dried etching technics of carving of doing organic layer at quarter, back common electrode layer at wet quarter by elder generation remove organic layer and the common electrode layer that is exposed to the photoresist outside, formation organic layer and public electrode layer pattern.
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| CN105842904B (en) | 2016-05-25 | 2024-02-06 | 京东方科技集团股份有限公司 | Array substrate, display device and preparation method |
| US10345697B2 (en) | 2017-05-10 | 2019-07-09 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Mask plates and manufacturing methods of array substrates |
| CN107132724B (en) * | 2017-05-10 | 2019-11-26 | 深圳市华星光电技术有限公司 | A kind of preparation method of mask plate and array substrate |
| CN110610901A (en) * | 2019-08-22 | 2019-12-24 | 武汉华星光电技术有限公司 | Array substrate and preparation method thereof |
| CN112235005B (en) * | 2019-06-30 | 2022-01-04 | Oppo广东移动通信有限公司 | Display screen assembly, antenna assembly and electronic equipment |
| CN111427188B (en) * | 2020-04-23 | 2022-09-23 | 昆山龙腾光电股份有限公司 | Color filter substrate and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060050099A (en) * | 2004-07-12 | 2006-05-19 | 호야 가부시키가이샤 | Gray tone mask and method for manufacturing the same |
| CN101034262A (en) * | 2006-03-09 | 2007-09-12 | 京东方科技集团股份有限公司 | Manufacturing method for array substrate of thin film transistor LCD |
| CN101075584A (en) * | 2006-05-19 | 2007-11-21 | 三国电子有限会社 | Method of manufacturing LCD apparatus by using halftone exposure method |
-
2008
- 2008-03-28 CN CN2008101029942A patent/CN101546733B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060050099A (en) * | 2004-07-12 | 2006-05-19 | 호야 가부시키가이샤 | Gray tone mask and method for manufacturing the same |
| CN101034262A (en) * | 2006-03-09 | 2007-09-12 | 京东方科技集团股份有限公司 | Manufacturing method for array substrate of thin film transistor LCD |
| CN101075584A (en) * | 2006-05-19 | 2007-11-21 | 三国电子有限会社 | Method of manufacturing LCD apparatus by using halftone exposure method |
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