US8860107B2 - FinFET-compatible metal-insulator-metal capacitor - Google Patents
FinFET-compatible metal-insulator-metal capacitor Download PDFInfo
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- US8860107B2 US8860107B2 US12/793,292 US79329210A US8860107B2 US 8860107 B2 US8860107 B2 US 8860107B2 US 79329210 A US79329210 A US 79329210A US 8860107 B2 US8860107 B2 US 8860107B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
Definitions
- the present invention relates to a semiconductor structure including a metal-insulator-metal capacitor (MIMCAP) compatible with finFET structures, and methods of manufacturing the same.
- MIMCAP metal-insulator-metal capacitor
- Capacitors are employed as passive components in a semiconductor chip. Capacitors are employed to decouple power supplies, to form a memory element, to form an RC delay circuit, and/or to provide various other circuit functions. Because capacitors tend to take up a significant circuit area, compact high capacitance capacitors are desirable for highly-integrated advanced semiconductor chips. At the same time, the number and complexity of additional processing steps for adding capacitors should be minimized in order to contain the total processing cost and to minimize the total processing time for semiconductor chips.
- finFETs i.e., field effect transistors formed on semiconductor fins having a height greater than the width
- semiconductor fins are formed by patterning a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate.
- SOI semiconductor-on-insulator
- At least one semiconductor fin for a capacitor is formed concurrently with other semiconductor fins for field effect transistors.
- a lower conductive layer is deposited and lithographically patterned to form a lower conductive plate located on the at least one semiconductor fin.
- a dielectric layer and at least one upper conductive layer are formed and lithographically patterned to form a node dielectric and an upper conductive plate over the lower conductive plate as well as a gate dielectric and a gate conductor over the other semiconductor fins.
- the lower conductive plate, the node dielectric, and the upper conductive plate collectively form a capacitor.
- the finFETs may be dual gate finFETs or trigate finFETs.
- a buried insulator layer may be optionally recessed to increase the capacitance. Alternately, the lower conductive plate may be formed on a planar surface of the buried insulator layer.
- a structure which includes: at least one fin structure located on a insulator material layer of a substrate; a lower conductive plate contacting a surface of the insulator material layer; a node dielectric contacting the lower conductive plate; an upper conductive plate contacting the node dielectric; and a gate dielectric contacting sidewalls of the at least one fin structure and having a same composition as the node dielectric.
- a method of forming a structure includes: forming at least one fin structure on an insulator material layer of a substrate; forming a lower conductive plate contacting a surface of the insulator material layer; forming a node dielectric directly on the lower conductive plate and a gate dielectric directly on sidewalls of the at least one fin structure, wherein the node dielectric and the gate dielectric are formed by patterning a same dielectric layer; and forming an upper conductive plate directly on the node dielectric.
- FIG. 1A is a top-down view of a first exemplary semiconductor structure after patterning of a first masking layer according to a first embodiment of the present invention.
- FIG. 1B is a vertical cross-sectional view of the first exemplary semiconductor structure along the plane X-X′ in FIG. 1A according to the first embodiment of the present invention.
- FIG. 2A is a top-down view of the first exemplary semiconductor structure after patterning of semiconductor fins according to the first embodiment of the present invention.
- FIG. 2B is a vertical cross-sectional view of the first exemplary semiconductor structure along the plane X-X′ in FIG. 2A according to the first embodiment of the present invention.
- FIG. 3A is a top-down view of the first exemplary semiconductor structure after deposition of a lower conductive layer and lithographic patterning of a second masking layer according to the first embodiment of the present invention.
- FIG. 3B is a vertical cross-sectional view of the first exemplary semiconductor structure along the plane X-X′ in FIG. 3A according to the first embodiment of the present invention.
- FIG. 4A is a top-down view of the first exemplary semiconductor structure after formation of a lower conductive plate according to the first embodiment of the present invention.
- FIG. 4B is a vertical cross-sectional view of the first exemplary semiconductor structure along the plane X-X′ in FIG. 4A according to the first embodiment of the present invention.
- FIG. 5A is a top-down view of the first exemplary semiconductor structure after deposition of a dielectric layer and at least one upper conductive layer according to the first embodiment of the present invention.
- FIG. 5B is a vertical cross-sectional view of the first exemplary semiconductor structure along the plane X-X′ in FIG. 5A according to the first embodiment of the present invention.
- FIG. 6A is a top-down view of the first exemplary semiconductor structure after patterning of a node dielectric and an upper conductive plate and a gate conductor according to the first embodiment of the present invention.
- FIG. 6B is a vertical cross-sectional view of the first exemplary semiconductor structure along the plane X-X′ in FIG. 6A according to the first embodiment of the present invention.
- FIG. 7A is a top-down view of the first exemplary semiconductor structure after deposition of a MOL dielectric layer and formation of contact via structures according to the first embodiment of the present invention.
- the MOL dielectric layer is omitted from the view for clarity.
- FIG. 7B is a vertical cross-sectional view of the first exemplary semiconductor structure along the plane X-X′′ in FIG. 7A according to the first embodiment of the present invention.
- the MOL dielectric layer is shown.
- FIG. 8A is a top-down view of a second exemplary semiconductor structure after deposition of a MOL dielectric layer and formation of contact via structures according to a second embodiment of the present invention.
- the MOL dielectric layer is omitted from the view for clarity.
- FIG. 8B is a vertical cross-sectional view of the second exemplary semiconductor structure along the plane X-X′ in FIG. 8A according to the second embodiment of the present invention.
- the MOL dielectric layer is shown.
- FIG. 9A is a top-down view of a third exemplary semiconductor structure after patterning of semiconductor fins according to a third embodiment of the present invention.
- FIG. 9B is a vertical cross-sectional view of the third exemplary semiconductor structure along the plane X-X′ in FIG. 9A according to the third embodiment of the present invention.
- FIG. 10A is a top-down view of a third exemplary semiconductor structure after deposition of a MOL dielectric layer and formation of contact via structures according to a third embodiment of the present invention.
- the MOL dielectric layer is omitted from the view for clarity.
- FIG. 10B is a vertical cross-sectional view of the third exemplary semiconductor structure along the plane X-X′ in FIG. 10A according to the third embodiment of the present invention.
- the MOL dielectric layer is shown.
- FIG. 11A is a top-down view of a fourth exemplary semiconductor structure after deposition of a MOL dielectric layer and formation of contact via structures according to a fourth embodiment of the present invention.
- the MOL dielectric layer is omitted from the view for clarity.
- FIG. 11B is a vertical cross-sectional view of the fourth exemplary semiconductor structure along the plane X-X′ in FIG. 11A according to the fourth embodiment of the present invention.
- the MOL dielectric layer is shown.
- FIG. 12A is a top-down view of a fifth exemplary semiconductor structure after patterning of semiconductor fins according to the fifth embodiment of the present invention.
- FIG. 12B is a vertical cross-sectional view of the fifth exemplary semiconductor structure along the plane X-X′ in FIG. 12A according to the fifth embodiment of the present invention.
- FIG. 13A is a top-down view of the fifth exemplary semiconductor structure after deposition of a lower conductive layer and lithographic patterning of a second masking layer according to the fifth embodiment of the present invention.
- FIG. 13B is a vertical cross-sectional view of the fifth exemplary semiconductor structure along the plane X-X′ in FIG. 13A according to the fifth embodiment of the present invention.
- FIG. 14A is a top-down view of the fifth exemplary semiconductor structure after formation of a lower conductive plate according to the fifth embodiment of the present invention.
- FIG. 14B is a vertical cross-sectional view of the fifth exemplary semiconductor structure along the plane X-X′ in FIG. 14A according to the fifth embodiment of the present invention.
- FIG. 15A is a top-down view of the fifth exemplary semiconductor structure after deposition of a dielectric layer and at least one upper conductive layer according to the fifth embodiment of the present invention.
- FIG. 15B is a vertical cross-sectional view of the fifth exemplary semiconductor structure along the plane X-X′ in FIG. 15A according to the fifth embodiment of the present invention.
- FIG. 16A is a top-down view of the fifth exemplary semiconductor structure after deposition of a MOL dielectric layer and formation of contact via structures according to the fifth embodiment of the present invention.
- the MOL dielectric layer is omitted from the view for clarity.
- FIG. 16B is a vertical cross-sectional view of the fifth exemplary semiconductor structure along the plane X-X′ in FIG. 16A according to the fifth embodiment of the present invention.
- the MOL dielectric layer is shown.
- the present invention relates to a semiconductor structure including a metal-insulator-metal capacitor (MIMCAP) compatible with finFET structures, and methods of manufacturing the same, which are now described in detail with accompanying figures. It is noted that like and corresponding elements are referred to by like reference numerals. The drawings are not in scale.
- MIMCAP metal-insulator-metal capacitor
- a first exemplary semiconductor structure includes a substrate containing a vertical stack of a handle substrate 10 , an insulator material layer 20 , and a top semiconductor layer 30 L.
- the handle substrate 10 may include a semiconductor material, an insulator material, a conductive material, or a combination thereof.
- the handle substrate 10 can provide mechanical support for the insulator material layer 20 and the top semiconductor layer 30 L.
- the insulator material layer 20 includes an insulator material such as silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.
- the insulator material layer 20 provides electrical isolation between the top semiconductor layer 30 L and the handle substrate 10 .
- the thickness of the insulator material layer 20 can be from 30 nm to 2 microns, and typically from 50 nm to 500 nm, although lesser and greater thicknesses can also be employed.
- the top semiconductor layer 30 L includes a semiconductor material, which may be selected from, but is not limited to, silicon, germanium, silicon-germanium alloy, silicon carbon alloy, silicon-germanium-carbon alloy, gallium arsenide, indium arsenide, indium phosphide, III-V compound semiconductor materials, II-VI compound semiconductor materials, organic semiconductor materials, and other compound semiconductor materials.
- the top semiconductor layer 30 L includes a single crystalline material having an epitaxial atomic alignment throughout.
- the thickness of the top semiconductor layer 30 L can be from 50 nm to 500 nm, although lesser and greater thicknesses can also be employed.
- a fin cap dielectric layer 40 L is deposited on the top surface of the top semiconductor layer 30 L, for example, by chemical vapor deposition (CVD).
- the fin cap dielectric layer 40 L includes a dielectric material such as silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.
- the thickness of the fin cap dielectric layer 40 L can be from 30 nm to 120 nm, although lesser and greater thicknesses can also be employed.
- a first masking layer 47 is formed on the top surface of the fin cap dielectric layer 40 L and is lithographically patterned.
- the first masking layer 47 can be a photoresist layer that can be directly patterned by lithographic exposure and development.
- the pattern in the first masking layer 47 includes at least one first shape having two parallel edges and at least one second shape having two parallel edges.
- the at least one first shape may be a plurality of first shapes, and/or the at least one second shape may be a plurality of second shapes.
- Each of the at least one first shape is rectangular, and may have a periodicity at a first pitch p 1 in a direction perpendicular to the parallel edges of the first shape(s).
- Each of the at least one second shape is rectangular, and may have a periodicity at a second pitch p 2 in a direction perpendicular to the parallel edges of the second shape(s). thereby said pattern is made of the same width throughout.
- the ends of the first shapes may be connected to at least one pad shape.
- Each pad shape laterally abuts a plurality of first shapes.
- Two pad shapes may be provided so that all of the first shapes are laterally abutted by one of the two pad shapes at each lengthwise end.
- a combined shape formed in the first masking layer 47 may include two pad shapes interconnected by a plurality of rectangular first shapes having parallel edges and having a first pitch p 1 .
- a combined shape in the first masking layer 47 may include two pad shapes interconnected by a single rectangular shape.
- the at least one second shape is patterned to correspond to horizontal cross-sectional area(s) of at least one semiconductor fin, which can be employed to form at least one finFET.
- the second pitch p 2 may be limited by the requirement that dielectric spacers to be subsequently formed do not plug the space between adjacent semiconductor fins.
- a plurality of first fins having a first pitch p 1 is not limited by this constraint.
- the first pitch p 1 may be a lithographically printable minimum pitch, and may be smaller than the second pitch p 2 .
- semiconductor fins are patterned by transferring the pattern in the first masking layer 47 into the fin cap dielectric layer 40 L and the top semiconductor layer 30 L.
- the remaining portions of the fin cap dielectric layer 40 L within the at least one first shape and any contiguous pad shape constitute at least one first fin cap dielectric portion 40 A.
- the remaining portions of the top semiconductor layer 30 L within the at least one first shape and any contiguous pad shape constitute at least one first semiconductor material portion 30 A.
- a vertical stack of a first semiconductor material portion 30 A and a first fin cap dielectric portion 40 A constitute a fin assembly structure ( 30 A, 40 A) that has a horizontal cross-sectional area of the combined shape.
- the fin assembly structure ( 30 A, 40 A) include at least one first fin structure 33 A, which is at least one portion that correspond to the at least one rectangular first shape, i.e., the complement of the pad portions of the fin assembly structure ( 30 A, 40 A).
- Each of the at least one first fin structure 33 A has a pair of sidewalls that vertically extend from a top surface of a rectangular portion of a first fin cap dielectric portion 40 A to a bottom surface of a rectangular portion of a first semiconductor material portion.
- the individual first fin structures 33 A may be arranged in an array with the first pitch p 1 .
- the remaining portions of the fin cap dielectric layer 40 L within the at least one second shape constitute at least one second fin cap dielectric portion 40 B.
- the remaining portions of the top semiconductor layer 30 L within the at least one second shape constitute at least one second semiconductor material portion 30 B.
- a vertical stack of a second semiconductor material portion 30 B and a second fin cap dielectric portion 40 B constitute a second fin structure 33 B that has a horizontal cross-sectional area of a second shape.
- each second fin structure 33 B is selected to optimize the performance of a finFET to be subsequently formed thereupon.
- the height of the second semiconductor material portion 303 (and consequently, the thickness of the top semiconductor layer 30 L in FIGS. 1A and 1B ) can be selected to optimize the performance of the finFET(s) to be formed from the at least one second fin structure 33 B.
- the width of the at least one first fin structure 33 A is not constrained by performance limitations of any finFET, but is limited only by the lithographic capacity to print a narrow structure and the mechanical stability of the at least one first fin structure 33 A. Consequently, the width of the at least one first fin structure 33 A can be less than the width of the at least one second fin structure 33 B.
- the height of the at least one first fin structure 33 A is the same as the height of the at least one second fin structure 33 B.
- a lower conductive layer 50 L is deposited on the exposed surfaces of the insulator material layer 20 and the sidewalls and the top surfaces of the fin assembly structure ( 30 A, 40 A) and the at least one second fin structure 33 B.
- the lower conductive layer 50 L includes a metallic conductive material, which can be, but is not limited to, TiN, TaN, WN, TiAlN, TaCN, CoWP, Ti, Ta, W, or a combination thereof.
- the lower conductive layer 50 L can be deposited, for example, by chemical vapor deposition, physical vapor deposition (sputtering), electroplating, or a combination thereof.
- the lower conductive layer 50 L can be a conformal layer or a non-conformal layer, i.e., may have a uniform thickness across the horizontal portions and the vertical portions or may have different thicknesses.
- the thickness of the lower conductive layer 50 L as measured at horizontal portions can be from 0.4 nm to 30 nm, and typically from 0.5 nm to 10 nm, although lesser and greater thicknesses can also be employed.
- a second masking layer 57 is formed over the lower conductive layer 50 L and is lithographically patterned.
- the second masking layer 57 can be a photoresist layer that can be directly patterned by lithographic exposure and development. After lithographic patterning, the second masking layer 57 covers the entirety of the area of the fin assembly structure ( 30 A, 40 A).
- the pattern in the second masking layer 57 is transferred to the lower conductive layer 50 L by an etch, which can be an isotropic etch such as a wet etch or an isotropic dry etch.
- the exposed portions of the lower conductive layer 50 L are removed during the etch.
- the semiconductor sidewalls of the at least one second semiconductor material portion 30 B are exposed after the etch.
- the remaining portion of the lower conductive layer 50 L constitute a lower conductive plate 50 , which is a contiguous structure that contacts all sidewalls of the at least one first fin structure 33 A.
- the second masking layer 57 is subsequently removed selective to the lower conductive plate 50 , for example, by asking.
- a dielectric layer 60 L and at least one upper conductive layer are deposited sequentially on the lower conductive plate 50 and the insulator material layer 20 .
- the at least one upper conductive layer may be a stack of a metallic conductive layer 70 L and a doped semiconductor material layer 80 L.
- the dielectric layer 60 L includes a metal-oxide-containing dielectric material, which is commonly referred to as a high dielectric constant (high-k) material.
- the metal-oxide-containing dielectric material can include, for example, at least one of HfO 2 , ZrO 2 , La 2 O 3 , Al 2 O 3 , TiO 2 , SrTiO 3 , LaAlO 3 , Y 2 O 3 , HfO x N y , ZrO x N y , La 2 O x N y , Al 2 O x N y , TiO x N y , SrTiO x N y , LaAlO x N y , Y 2 O x N y , a silicate thereof, and an alloy thereof, and non-stoichiometric variants thereof, wherein each value of x is independently from about 0.5 to about 3 and each value of y is independently from 0 to about 2.
- the thickness of the metal-oxide-containing insulator material can be from about 1 nm to about 10 nm, and preferably from about 1.5 nm to about 3 nm.
- the metal-oxide-containing insulator material can have an effective oxide thickness (BOT) on the order of, or less than, 1 nm.
- BOT effective oxide thickness
- the metal-oxide-containing insulator material can be deposited, for example, by chemical vapor deposition, atomic layer deposition, or a combination thereof.
- the dielectric layer 60 L includes silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.
- the dielectric layer 60 L can be formed by deposition of a dielectric material, for example, by chemical vapor deposition.
- the at least one upper conductive layer is subsequently deposited on the dielectric layer 60 L.
- the metallic conductive layer 70 L can include at least one of TiN, TaN, WN, TiAlN, TaCN, CoWP, Ti, Ta, W, other conductive refractory metal nitride, or an alloy or a stack thereof.
- the metallic conductive layer 70 L can include a metal such as Ru, Pd, Pt, Co, Ni, Ta x Al y N, W x C y N, Zr, Hf, Al, a metal carbide, a conductive metal oxide, a conductive metal nitride, a transition metal aluminide, a metal silicide, and a combination thereof.
- a metal such as Ru, Pd, Pt, Co, Ni, Ta x Al y N, W x C y N, Zr, Hf, Al
- a metal carbide a conductive metal oxide, a conductive metal nitride, a transition metal aluminide, a metal silicide, and a combination thereof.
- x is independently from 0 to about 1
- each value of y is independently from 0 to about 1.
- Exemplary transition metal aluminide include Ti 3 Al and ZrAl.
- the metallic conductive layer 70 L can be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), or a combination thereof.
- the thickness of the metallic conductive layer 70 L can be from about 5 nm to about 40 nm, and preferably from about 10 nm to about 30 nm, although lesser and greater thicknesses can also be employed.
- the composition of the metallic conductive layer 70 L can be selected to optimize threshold voltages of finFETs to be subsequently formed on the at least one second fin structure 33 B.
- the doped semiconductor material layer SOL can include an amorphous or polycrystalline semiconductor material such as polysilicon, amorphous silicon, a silicon-germanium alloy, a silicon-carbon alloy, a silicon-germanium-carbon alloy, or a combination thereof.
- P-type dopant atoms or n-type dopant atoms can be introduced into the doped semiconductor material layer 80 L by in-situ doping during deposition of the doped semiconductor material layer SOL, or by a subsequent ion implantation.
- the thickness of the doped semiconductor material layer 80 L can be from about 30 nm to about 300 nm, and typically from about 60 nm to about 150 nm, although lesser and greater thicknesses are also contemplated herein.
- the doped semiconductor material layer SOL can be formed by a blanket deposition process such as chemical vapor deposition, physical vapor deposition, or a combination thereof.
- the at least one upper conductive layer ( 70 L, 80 L) and the dielectric layer 60 L are lithographically patterned.
- the at least one upper conductive layer ( 70 L, 80 L) can be patterned to form an upper conductive plate that overlies the at least one first fin structure of the fin assembly structure ( 30 A, 40 A).
- the upper conductive plate can include a stack of a first doped semiconductor material portion 80 A and a first metallic conductive portion 70 A.
- the dielectric layer 60 L can be patterned to form a node dielectric 60 A over the at least one first fin structure of the fin assembly structure ( 30 A, 40 A).
- the sidewalls of the upper conductive plate ( 70 A, 80 A) vertically coincide with the sidewalls of the node dielectric 60 A.
- the lower conductive plate 50 , the node dielectric 60 A, and the upper conductive plate ( 70 A, 80 A) form a capacitor.
- the at least one upper conductive layer ( 70 L, 80 L) can be patterned to form a gate electrode that straddles over a middle portion of the at least one second fin structure 33 B.
- the gate electrode can include a stack of a second doped semiconductor material portion 80 B and a second metallic conductive portion 70 B.
- the dielectric layer 60 L can be patterned to form a gate dielectric 60 B over the middle portion of the at least one second fin structure 33 B.
- the upper conductive plate ( 70 A, 80 A) and the gate electrode ( 70 B, 80 B) can be patterned simultaneously in a first processing step, i.e., a first etch step, and the node dielectric 60 A and the gate dielectric 60 B can be patterned simultaneously whereby the node dielectric 60 A and gate dielectric 60 B comprise the same conductive material.
- masked ion implantations can be performed to dope various portions of the second semiconductor material portion 30 B in each of the at least one second fin structure 33 B.
- dielectric spacers can be formed to offset the boundary of various implanted regions relative to other structural elements.
- a second dielectric spacer 88 B can be formed on the sidewalk of the gate electrode ( 70 B, 80 B) to laterally offset the boundary of source and drain regions in the at least one second semiconductor material portions 30 B.
- a first dielectric spacer 88 A can be formed around the periphery of the stack of the upper conductive plate ( 70 A, 80 A) and the node dielectric 60 A concurrently with the formation of the second dielectric spacer 88 B.
- the combination of dielectric spacers and masked ion implantations can be employed to form source and drain regions and/or source and drain extension regions in locations selected for optimized performance of finFETs that are formed on the at least one second fin structure 33 B.
- the finFETs are dual gate FETs, i.e., field effect transistors having a gate electrode on both sidewalls of a semiconductor fin.
- Metal semiconductor alloys such as a metal silicide may be formed on some semiconductor surfaces as needed.
- a middle-of-line (MOL) dielectric layer 90 is deposited the upper conductive plate ( 70 A, 80 A), the gate electrode ( 70 B, 80 B), the first and second dielectric spacers ( 88 A, 88 B), and the insulator material layer 20 .
- the MOL dielectric layer 90 is omitted from the top-down view of FIG. 7A for clarity.
- the MOL dielectric layer 90 may include, for example, a CVD oxide.
- the CVD oxide may be an undoped silicate glass (USG), borosilicate glass (BSG), phosphosilicate glass (PSG), fluorosilicate glass (FSG), borophosphosilicate glass (BPSG), or a combination thereof.
- the MOL dielectric layer 90 may include an organosilicate glass (OSG).
- OSG organosilicate glass
- the thickness of the MOL dielectric layer 90 can be from about 200 nm to about 500 nm.
- the MOL dielectric layer 90 can be planarized, for example, by chemical mechanical polishing (CMP).
- the various contact via structures can include, but are not limited to, at least one upper terminal contact structure 92 , at least one lower terminal contact structure 94 , source and drain contact structures 96 , and at least one gate contact structure 98 .
- the at least one upper terminal contact structure 92 contacts the upper conductive plate ( 70 A, 80 A).
- the at least one lower terminal contact structure 94 contacts the lower conductive plate 50 .
- the source and drain contact structures 96 contacts the source and drain regions of the finFET(s) formed on the at least one second fin structure 33 B.
- the at least one gate contact structure 98 contacts the gate electrode ( 70 B, SOB).
- a second exemplary semiconductor structure according to a second embodiment of the present invention is shown after deposition of the MOL dielectric layer 90 and formation of various contact via structures ( 92 , 94 , 96 , 98 ).
- the MOL dielectric layer 90 is omitted from the top-down view of FIG. 8A for clarity.
- the second exemplary semiconductor structure can be derived from the first exemplary semiconductor structure by omitting the formation of the fin cap dielectric layer 40 L.
- the at least one first dielectric fin cap portion 40 A and the at least one second dielectric fin cap portion 40 B are not formed.
- Each first fin structure 33 A includes a sub-portion of a first semiconductor material portion 30 A
- each second fin structure 33 B includes a second semiconductor material portion 30 B.
- the top surfaces of the at least one first semiconductor material portion 30 A contacts a bottom surface of the lower conductive plate 50 .
- the top surfaces of the at least one second semiconductor material portion 30 B contacts a bottom surface of the gate dielectric 60 B.
- the finFETs are trigate FETs, i.e., field effect transistors having a gate electrode on both sidewalls of a semiconductor fin and on a top surface of the semiconductor fin.
- a third exemplary semiconductor structure according to a third embodiment of the present invention is derived from the first exemplary semiconductor structure of FIGS. 1A and 1B by etching through unmasked portions of the fin cap dielectric layer 40 L and the top semiconductor layer 30 L and subsequently etching into upper portions of the insulator material layer 20 .
- the insulating material layer 20 including patterned recessed areas is herein referred to as a patterned insulating material layer 20 ′.
- the first masking layer 47 is subsequently removed.
- the recess depth rd which is the vertical distance between the topmost surfaces of the patterned insulating material layer 20 ′ and the recessed surfaces of the patterned insulating material layer 20 ′ can be from 1% to 99%, and typically from 10% to 90% of the thickness of the insulating material layer 20 prior to patterning.
- the patterned insulating material layer 20 ′ includes a planar portion, which is herein referred to as a planar insulating material layer 20 Z.
- the patterned insulating material layer 20 ′ further includes at least one protruding portion, which is herein referred to as at least one first insulating material portion 20 A, underneath the at least one first semiconductor portion 30 A.
- the patterned insulating material layer 20 ′ further includes at least another protruding portion, which is herein referred to as at least one second insulating material portion 20 B, underneath the at least one second semiconductor portion 308 .
- the sidewalls of each first insulator material portion 20 A are vertically coincident with sidewalls of a first semiconductor material portion 30 A and a first fin cap dielectric portion 40 A.
- the sidewalls of each second insulator material portion 20 B are vertically coincident with sidewalls of a second semiconductor material portion 30 B and a second fin cap dielectric portion 40 B.
- each of the at least one first fin structure 133 A includes a rectangular portion of a vertical stack, from bottom to top, of a first insulator material portion 20 A, a first semiconductor material portion 30 A, and a first fin cap dielectric portion 40 A.
- each of the at least one second fin structure 133 B includes a vertical stack, from bottom to top, of a second insulator material portion 20 B, a second semiconductor material portion 30 B, and a second fin cap dielectric portion 408 .
- the first and second fin structures ( 133 A, 133 B) have the same composition and the same height.
- the bottom corners of the first and second insulator material portions ( 20 A, 20 B) can be rounded, for example, by employing a polymerizing etch. Such corner rounding can be advantageously employed to reduce electric field generated from a lower conductive plate of a capacitor to be subsequently formed.
- the first and second insulator material portions ( 20 A, 20 B) may be laterally recessed by an isotropic etch. Such lateral recessing increases the exposed area of the at least one first fin structure 133 A so that a lower conductive plate of a capacitor to be subsequently formed has an increased area, thereby increasing the capacitance of the capacitor.
- FIGS. 3A-7B can be sequentially performed to form the third exemplary semiconductor structure shown in FIGS. 10A and 10B .
- the MOL dielectric layer 90 is omitted from the top-down view of FIG. 10A for clarity.
- the third exemplary semiconductor structure can provide an increased capacitance over the first exemplary semiconductor structure by the extended height of the sidewalls of the first fin structure ( 20 A, 30 A, 40 A) due to the presence of the at least one first insulator material portion 20 A.
- the finFETs of the third exemplary semiconductor structure are dual gate FETs.
- FIG. 11A is a top-down view of a fourth exemplary semiconductor structure according to a fourth embodiment of the present invention is shown after deposition of the MOL dielectric layer 90 and formation of various contact via structures ( 92 , 94 , 96 , 98 ).
- the MOL dielectric layer 90 is omitted from the top-down view of FIG. 11A for clarity.
- the fourth exemplary semiconductor structure can be derived from the third exemplary semiconductor structure by omitting the formation of the fin cap dielectric layer 40 L.
- the at least one first dielectric fin cap portion 40 A and the at least one second dielectric fin cap portion 40 B are not formed.
- Each first fin structure 133 A includes a portion of a stack of a first insulator material portion 20 A and a first semiconductor material portion 30 A
- each second fin structure 133 B includes a stack of a second insulator material portion 20 B and a second semiconductor material portion 30 B.
- the top surfaces of the at least one first semiconductor material portion 30 A contacts a bottom surface of the lower conductive plate 50 .
- the top surfaces of the at least one second semiconductor material portion 30 B contacts a bottom surface of the gate dielectric 60 B.
- the finFETs are trigate FETs, i.e., field effect transistors having a gate electrode on both sidewalls of a semiconductor fin and on a top surface of the semiconductor fin.
- a fifth exemplary semiconductor structure according to the fifth embodiment of the present invention can be derived from the first exemplary semiconductor structure of FIGS. 2A and 2B by eliminating the vertical stack of the first semiconductor material portion 30 A and the first fin cap dielectric portion 40 A.
- the at least one first fin structure 33 A is not present in the fifth exemplary semiconductor structure.
- An exposed planar top surface area PA of the insulator material layer 20 is provided in the fifth exemplary semiconductor structure.
- FIGS. 13A and 13B the processing steps of FIGS. 3A and 3B can be performed as in the first embodiment. Because a first fin structure 33 A of the first embodiment (See FIGS. 3A and 3B ) is not present, a planar portion of the lower conductive layer 50 L is formed in the exposed planar top surface area of the insulator material layer 20 . A second masking layer 57 is patterned to cover the planar portion of the lower conductive layer 50 L.
- the processing steps of FIGS. 4A and 4B can be performed as in the first embodiment.
- the remaining portion of the lower conductive layer 50 L constitutes a lower conductive plate 50 .
- the entirety of the bottom surface of the lower conductive plate 50 contacts a planar top surface of the insulator material layer 20 .
- the processing steps of FIGS. 5A and 5B can be performed as in the first embodiment to deposit a dielectric layer 60 L and at least one upper conductive layer.
- the interface between the top surface of the lower conductive plate 50 and the dielectric layer 60 L is planar, i.e., horizontal. Further, the interface between the portion of the top surface of the dielectric layer 60 L and the at least one upper conductive layer ( 70 L, 80 L) over the lower conductive plate is also planar.
- the fifth exemplary semiconductor structure includes a capacitor.
- the capacitor includes the lower conductive plate 50 , the node dielectric 60 A, and the upper conductive plate that includes a stack of a first metallic conductive portion 70 A and a first doped semiconductor material portion 80 A. Because the capacitor of the fifth embodiment is formed on a planar top surface of the insulator material layer 20 , all interfaces within the capacitor ( 50 , 60 A, 70 A, 80 A) can be planar, i.e., horizontal.
- the finFETs of the fifth exemplary semiconductor structure can be dual gate FETs.
- the formation of the fin cap dielectric layer 40 L can be omitted as in the second and fourth embodiment.
- the at least one first dielectric fin cap portion 40 A and the at least one second dielectric fin cap portion 40 B are not formed.
- the top surfaces of the at least one second semiconductor material portion 30 B contacts a bottom surface of the gate dielectric 60 B.
- the finFETs are trigate FETs in this case.
- an exposed planar top surface area PA of FIGS. 12A and 12B can be recessed to a recess depth rd employing the methods of FIGS. 9A and 9B .
- a planar capacitor is formed on the recessed surface of the insulator material layer 20 .
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Abstract
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