US8830447B2 - Inspection method for lithography - Google Patents

Inspection method for lithography Download PDF

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US8830447B2
US8830447B2 US13/264,256 US201013264256A US8830447B2 US 8830447 B2 US8830447 B2 US 8830447B2 US 201013264256 A US201013264256 A US 201013264256A US 8830447 B2 US8830447 B2 US 8830447B2
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focus
substrate
lithographic apparatus
spectrum
side wall
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US20120044472A1 (en
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Arie Jeffrey Den Boef
Hugo Augustinus Joseph Cramer
Paul Christiaan Hinnen
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ASML Netherlands BV
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ASML Netherlands BV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
    • G01N21/474—Details of optical heads therefor, e.g. using optical fibres
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/522—Projection optics
    • G03B27/525—Projection optics for slit exposure

Definitions

  • the present invention relates to methods of inspection usable, for example, in the manufacture of devices by lithographic techniques and to methods of manufacturing devices using lithographic techniques.
  • a lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning device which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC.
  • This pattern can be transferred onto a target portion (e.g., comprising part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate.
  • resist radiation-sensitive material
  • a single substrate will contain a network of adjacent target portions that are successively patterned.
  • lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
  • a scatterometer In order to monitor the lithographic process, it is necessary to measure parameters of the patterned substrate, for example the overlay error between successive layers formed in or on it.
  • parameters of the patterned substrate for example the overlay error between successive layers formed in or on it.
  • One form of specialized inspection tool is a scatterometer, in which a beam of radiation is directed onto a target on the surface of the substrate and properties of the scattered or reflected beam are measured. By comparing the properties of the beam before and after it has been reflected or scattered by the substrate, the properties of the substrate can be determined. This can be done, for example, by comparing the reflected beam with data stored in a library of known measurements associated with known substrate properties.
  • Two main types of scatterometers are known.
  • Spectroscopic scatterometers direct a broadband radiation beam onto the substrate and measure the spectrum (intensity as a function of wavelength) of the radiation scattered into a particular narrow angular range.
  • Angularly resolved scatterometers use a monochromatic radiation beam and measure the intensity of the scattered radiation as a function of angle.
  • a lithographic apparatus has an exposure apparatus that includes a radiation source and a projection system as mentioned below.
  • the radiation source provides a beam of radiation and the projection system focuses the beam of radiation and applies a pattern to the beam to create a patterned beam of radiation that strikes the resist on the substrate surface.
  • the dose of radiation that is projected onto a substrate in order to expose the substrate is controlled by various parts of the exposure apparatus. It is mostly the projection system of the lithographic apparatus that is responsible for the focus of the radiation onto the correct portions of the substrate. It is important that the focusing of the image of the pattern in the patterned radiation occurs at the surface of the substrate where the exposure occurs. This is so that the sharpest (i.e., most focused) image will occur on the surface of the substrate and the sharpest pattern possible may be exposed thereon. This allows smaller product patterns to be printed.
  • the focus and dose of the radiation directly affect various parameters of the patterns or structures that are exposed on the substrate.
  • Parameters that can be measured using a scatterometer are physical properties of structures within the patterns that have been printed onto a substrate. These parameters may include the critical dimension (CD) or side wall angle (SWA).
  • the critical dimension is effectively the mean width of a structure such as a bar (or a space, dot or hole, depending on what the measured structures are that are in the printed pattern).
  • the side wall angle is the angle between the surface of the substrate and part of the rising (or falling) portion of the structure.
  • mask shape corrections can be applied if scribe lane structures are used with a product mask for focus measurements.
  • a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate comprising the following steps. Using the lithographic process to form at least two periodic structures on the substrate, each structure having at least one feature that has an asymmetry between opposing side wall angles which varies as a different function of the focus of the lithographic apparatus on the substrate. Measuring a spectrum produced by directing a beam of radiation onto the at least two periodic structures. Determining a ratio of the asymmetries for each of the features from the measured spectrum. Using the determined ratio and the relationship between the focus and the side wall asymmetry for each feature to determine the focus on the substrate.
  • an angularly resolved scatterometer configured to determine focus of a lithographic apparatus used in a lithographic process on a substrate to form at least two periodic structures on the substrate, each structure having at least one feature which has an asymmetry between opposing side wall angles which varies as a different function of the focus of the lithographic apparatus on the substrate.
  • the scatterometer comprises a detection arrangement and a determining arrangement.
  • the detection arrangement is adapted to measure at least part of a spectrum produced by directing a beam of radiation onto the at least two periodic structures.
  • the determining arrangement is adapted to determine the ratios of the asymmetries for each of the features from the measured spectrum and to use the determined ratio and the relationship between the focus and the side wall asymmetry for each feature to determine the focus on the substrate.
  • a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate comprising the following steps. Using the lithographic process to form at least two targets on the substrate, each target having at least one parameter which varies as a different function of the focus of the lithographic apparatus on the substrate. Measuring a spectrum produced by directing a beam of radiation onto the at least two targets. Using the parameters for the at least two targets derived from the measured spectrum to determine a relationship between the parameter and focus which is substantially independent of the processing conditions for the lithographic apparatus.
  • FIG. 1 depicts a lithographic apparatus, in accordance with an embodiment of the present invention.
  • FIG. 2 depicts a lithographic cell or cluster, in accordance with an embodiment of the present invention.
  • FIG. 3 depicts a first scatterometer, in accordance with an embodiment of the present invention.
  • FIG. 4 depicts a second scatterometer, in accordance with an embodiment of the present invention.
  • FIG. 5 depicts a variation in side wall angles as a function of focus, in accordance with an embodiment of the present invention.
  • FIG. 6 depicts a variation in left and right side wall angles as a function of focus, in accordance with an embodiment of the present invention.
  • FIG. 7 illustrates a flowchart depicting a method, in accordance with an embodiment of the invention.
  • FIG. 8 depicts variation in side wall angle difference as a function of focus for two different focus sensitive gradients having different asymmetric side wall angle responses.
  • FIG. 9 depicts a focus error for two different bottom anti reflection coating (BARC) thicknesses calculated from SWA asymmetries using a method, in accordance with an embodiment of the present invention.
  • BARC bottom anti reflection coating
  • Embodiments of the invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the invention may also be implemented as instructions stored on a machine-readable medium, which may be read and executed by one or more processors.
  • a machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device).
  • a machine-readable medium may include read only memory (ROM); random access memory (RAM); magnetic disk storage media; optical storage media; flash memory devices; electrical, optical, acoustical or other forms of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), and others.
  • firmware, software, routines, instructions may be described herein as performing certain actions. However, it should be appreciated that such descriptions are merely for convenience and that such actions in fact result from computing devices, processors, controllers, or other devices executing the firmware, software, routines, instructions, etc.
  • FIG. 1 schematically depicts a lithographic apparatus.
  • the apparatus comprises: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or DUV radiation); a support structure (e.g., a mask table) MT constructed to support a patterning device (e.g., a mask) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters; a substrate table (e.g., a wafer table) WT constructed to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters; and a projection system (e.g., a refractive projection lens system) PL configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.
  • a radiation beam B e.g.,
  • the illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • optical components such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • the support structure supports, i.e., bears the weight of, the patterning device. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment.
  • the support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device.
  • the support structure may be a frame or a table, for example, which may be fixed or movable as required.
  • the support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
  • patterning device used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • the patterning device may be transmissive or reflective.
  • Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels.
  • Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
  • An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam, which is reflected by the mirror matrix.
  • projection system used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
  • the apparatus is of a transmissive type (e.g., employing a transmissive mask).
  • the apparatus may be of a reflective type (e.g., employing a programmable mirror array of a type as referred to above, or employing a reflective mask).
  • the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
  • the lithographic apparatus may also be of a type wherein at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g., water, so as to fill a space between the projection system and the substrate.
  • a liquid having a relatively high refractive index e.g., water
  • An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
  • immersion as used herein does not mean that a structure, such as a substrate, must be submerged in liquid, but rather only means that liquid is located between the projection system and the substrate during exposure.
  • the illuminator IL receives a radiation beam from a radiation source SO.
  • the source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD comprising, for example, suitable directing mirrors and/or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp.
  • the source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
  • the illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam.
  • an adjuster AD for adjusting the angular intensity distribution of the radiation beam.
  • the illuminator IL may comprise various other components, such as an integrator IN and a condenser CO.
  • the illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
  • the radiation beam B is incident on the patterning device (e.g., mask MA), which is held on the support structure (e.g., mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam B passes through the projection system PL, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WT can be moved accurately, e.g., so as to position different target portions C in the path of the radiation beam B.
  • the first positioner PM and another position sensor (which is not explicitly depicted in FIG.
  • the mask table MT can be used to accurately position the mask MA with respect to the path of the radiation beam B, e.g., after mechanical retrieval from a mask library, or during a scan.
  • movement of the mask table MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM.
  • movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW.
  • the mask table MT may be connected to a short-stroke actuator only, or may be fixed.
  • Mask MA and substrate W may be aligned using mask alignment marks M 1 , M 2 and substrate alignment marks P 1 , P 2 .
  • the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks).
  • the mask alignment marks may be located between the dies.
  • the depicted apparatus could be used in at least one of the following modes:
  • the lithographic apparatus LA forms part of a lithographic cell LC, also sometimes referred to a lithocell or cluster, which also includes apparatus to perform pre- and post-exposure processes on a substrate.
  • lithographic cell LC also sometimes referred to a lithocell or cluster
  • apparatus to perform pre- and post-exposure processes on a substrate include spin coaters SC to deposit resist layers, developers DE to develop exposed resist, chill plates CH and bake plates BK.
  • a substrate handler, or robot, RO picks up substrates from input/output ports I/O 1 , I/O 2 , moves them between the different process apparatus and delivers then to the loading bay LB of the lithographic apparatus.
  • track control unit TCU which is itself controlled by the supervisory control system SCS, which also controls the lithographic apparatus via lithography control unit LACU.
  • SCS supervisory control system
  • LACU lithography control unit
  • the substrates that are exposed by the lithographic apparatus are exposed correctly and consistently, it is desirable to inspect exposed substrates to measure properties such as overlay errors between subsequent layers, line thicknesses, critical dimensions (CD), etc. If errors are detected, adjustments may be made to exposures of subsequent substrates, especially if the inspection can be done soon and fast enough that other substrates of the same batch are still to be exposed. Also, already exposed substrates may be stripped and reworked—to improve yield—or discarded—thereby avoiding performing exposures on substrates that are known to be faulty. In a case where only some target portions of a substrate are faulty, further exposures can be performed only on those target portions that are good.
  • properties such as overlay errors between subsequent layers, line thicknesses, critical dimensions (CD), etc. If errors are detected, adjustments may be made to exposures of subsequent substrates, especially if the inspection can be done soon and fast enough that other substrates of the same batch are still to be exposed. Also, already exposed substrates may be stripped and reworked—to improve yield—or discarded
  • An inspection apparatus is used to determine the properties of the substrates, and in particular, how the properties of different substrates or different layers of the same substrate vary from layer to layer.
  • the inspection apparatus may be integrated into the lithographic apparatus LA or the lithocell LC or may be a stand-alone device. To allow most rapid measurements, it is desirable that the inspection apparatus measure properties in the exposed resist layer immediately after the exposure.
  • the latent image in the resist has a very low contrast—there is only a very small difference in refractive index between the parts of the resist that have been exposed to radiation and those which have not—and not all inspection apparatus have sufficient sensitivity to make useful measurements of the latent image.
  • measurements may be taken after the post-exposure bake step (PEB) that is customarily the first step carried out on exposed substrates and increases the contrast between exposed and unexposed parts of the resist.
  • PEB post-exposure bake step
  • the image in the resist may be referred to as semi-latent. It is also possible to make measurements of the developed resist image—at which point either the exposed or unexposed parts of the resist have been removed—or after a pattern transfer step such as etching. The latter possibility limits the possibilities for rework of faulty substrates but may still provide useful information.
  • FIG. 3 depicts a scatterometer SM 1 which may be used in the present invention. It comprises a broadband (white light) radiation projector 2 which projects radiation onto a substrate W. The reflected radiation is passed to a spectrometer detector 4 , which measures a spectrum 10 (intensity as a function of wavelength) of the specular reflected radiation. From this data, the structure or profile giving rise to the detected spectrum may be reconstructed by processing unit PU, e.g., by Rigorous Coupled Wave Analysis and non-linear regression or by comparison with a library of simulated spectra as shown at the bottom of FIG. 3 .
  • processing unit PU e.g., by Rigorous Coupled Wave Analysis and non-linear regression or by comparison with a library of simulated spectra as shown at the bottom of FIG. 3 .
  • Such a scatterometer may be configured as a normal-incidence scatterometer or an oblique-incidence scatterometer.
  • FIG. 4 Another scatterometer SM 2 that may be used with the present invention is shown in FIG. 4 .
  • the radiation emitted by radiation source 2 is focused using lens system 12 through interference filter 13 and polarizer 17 , reflected by partially reflected surface 16 and is focused onto substrate W via a microscope objective lens 15 , which has a high numerical aperture (NA), preferably at least 0.9 and more preferably at least 0.95.
  • NA numerical aperture
  • Immersion scatterometers may even have lenses with numerical apertures over 1.
  • the reflected radiation then transmits through partially reflective surface 16 into a detector 18 in order to have the scatter spectrum detected.
  • the detector may be located in the back-projected pupil plane 11 , which is at the focal length of the lens system 15 , however the pupil plane may instead be re-imaged with auxiliary optics (not shown) onto the detector.
  • the pupil plane is the plane in which the radial position of radiation defines the angle of incidence and the angular position defines azimuth angle of the radiation.
  • the detector is preferably a two-dimensional detector so that a two-dimensional angular scatter spectrum of a substrate target 30 can be measured.
  • the detector 18 may be, for example, an array of CCD or CMOS sensors.
  • a reference beam is often used for example to measure the intensity of the incident radiation. To do this, when the radiation beam is incident on the beam splitter 16 part of it is transmitted through the beam splitter as a reference beam towards a reference mirror 14 . The reference beam is then projected onto a different part of the same detector 18 .
  • a set of wavelength filters 13 is available to select a wavelength of interest in the range of, say, 405-790 nm or even lower, such as 200-300 nm.
  • the filter may be tunable rather than comprising a set of different filters.
  • the detector 18 may measure the intensity of scattered light at a single wavelength (or narrow wavelength range), the intensity separately at multiple wavelengths or integrated over a wavelength range. Furthermore, the detector may separately measure the intensity of transverse magnetic- and transverse electric-polarized light and/or the phase difference between the transverse magnetic- and transverse electric-polarized light.
  • a broadband light source i.e., one with a wide range of light frequencies or wavelengths—and therefore of colors
  • the plurality of wavelengths in the broadband preferably each has a bandwidth of *8 and a spacing of at least 2*8 (i.e., twice the bandwidth).
  • sources can be different portions of an extended radiation source which have been split using fiber bundles. In this way, angle resolved scatter spectra can be measured at multiple wavelengths in parallel.
  • a 3-D spectrum (wavelength and two different angles) can be measured, which contains more information than a 2-D spectrum. This allows more information to be measured which increases metrology process robustness. This is described in more detail in EP1,628,164A.
  • the target 30 on substrate W may be a grating, which is printed such that after development, the bars are formed of solid resist lines.
  • the bars may alternatively be etched into the substrate.
  • This pattern is sensitive to aberrations in the lithographic projection apparatus, particularly the projection system PL, and illumination symmetry and the presence of such aberrations will manifest themselves in a variation in the printed grating. Accordingly, the scatterometry data of the printed gratings is used to reconstruct the gratings.
  • the parameters of the grating such as line widths and shapes, may be input to the reconstruction process, performed by processing unit PU, from knowledge of the printing step and/or other scatterometry processes.
  • FIG. 5 illustrates a variation in side wall angles of a pattern produced in a resist layer from a focus-sensitive target on a mask.
  • this is described in co-owned, co-pending application U.S. Provisional Application No. 61/141,410 (‘the '410 Prov. App.), filed 30 Dec. 2008, which is incorporated by reference herein in its entirety.
  • the '410 Prov. App. there is disclosed embodiments covering a method of measuring focus using the asymmetry in the higher orders of the scattered light, caused by the different left and right side wall angles (SWAB) of a printed line structure as a function of focus.
  • SWAB left and right side wall angles
  • the inventors for the present application have found that, while a correlation between the asymmetry in the higher order of the scattered light as caused by the differences between side wall angles between the left and right edges of a printed resist line can be expressed as a function of the scanner focus, the function is dependent on a number of process parameters, in particular resist parameters, such as mid CD and height, and bottom anti reflection coating (BARC), such as BARC thickness.
  • BARC bottom anti reflection coating
  • a variation in the BARC thickness produces a variation in the function, which will lead to an error in the focus measurements deduced from the SWA difference, which is derived in turn from the scatterometry measurements.
  • the side wall angles measured relative to the plane parallel to the substrate surface increase as a function of focus, the left and right values of the side wall angles converging to the same value with the increase in focus.
  • FIG. 6 shows the side wall angles of the right and left sides of a structure profile, according to an embodiment of the present invention.
  • the diamond-shaped points represent the left side wall angles whilst the square-shaped dots represent the right side wall angles.
  • the exposed pattern exhibits a difference in side wall angle as a monotonic function of the exposure focus.
  • the side wall angles for the right and left sides of the profile are quite divergent.
  • the values of the side wall angles converge as the exposure focus increases towards the right hand side of the graph.
  • the differences in the left and right side wall angles can be used as a determination of the focus of the exposure beam.
  • K is a process dependent proportionality factor
  • the value of K is dependent on processing features, such as BARC thickness or thicknesses of other processing layers that are present on the substrate.
  • processing features such as BARC thickness or thicknesses of other processing layers that are present on the substrate.
  • BARC thickness or thicknesses of other processing layers that are present on the substrate.
  • a grating structure having a mid CD of 260 nm, grating pitch of 600 nm, grating height of 60 nm, a side wall angle SWA of 85° and a BARC thickness of 40 nm comparing a spectrometry spectra measured at a wavelength of 425 nm with a reconstructed spectra, with floating resist parameters having the same mid CD, pitch, grating height and SWA, but with a fixed BARC thickness of 38 nm, leads to an error in the reconstructed SWA.
  • the reconstructed SWA for illumination using overlapping orders is 69° and for segmented illumination in which the illumination is divided into a number of segments, e.g., four equal or non equal quadrants, in which some segments are illuminated and some are unilluminated is 75°.
  • SWA sensitivity for the focus of 0.2° per nm a focus error of 80 nm is produced for illumination and 50 nm for BMW illumination. Such a processing induced focus error may be too large for present day lithography processing requirements.
  • the SWA asymmetry is measured for two different focus sensitive gratings printed on adjacent regions of the wafer W.
  • the ratio of the asymmetries is derived and used, together with values derived from measurements and simulations for the gratings printed on a test wafer, to derive a value of the focus.
  • This allows elimination of the process dependent proportionality factor K and allows determination of a value of the focus from the measured asymmetries A of at least two different focus sensitive gratings, which focus value is not sensitive to the BARC thickness.
  • G 1 is not a linear derivative of G 2 it is possible to solve this equation for the unknown focus term Z.
  • the functions G 1 and G 2 should be as different as possible with the measured ratio ⁇ being a monotonous function of Z. Assuming, that the functions G 1 and G 2 are parabolic, it is possible to write:
  • ⁇ a 1 + b 1 ⁇ Z + c 1 ⁇ Z 2 a 2 + b 2 ⁇ Z + c 2 ⁇ Z 2
  • This equation can be solved using standard methods for solving quadratic equations.
  • FIG. 7 illustrates a flowchart depicting a method, according to an embodiment of the present invention.
  • step S 1 a test wafer is processed using lithography apparatus to produce two different gratings that are nominally identical but with a different focus sensitivity for side wall angle asymmetry on two adjacent portions of a test wafer. This is repeated for different focus settings.
  • a scatterometer spectrum of all gratings on the test wafer is measured in S 2 and the SWA asymmetry for the gratings is determined from the intensity measurements of the +1 and ⁇ 1 diffraction orders.
  • the ratio of the measured SWA asymmetries of two paired targets, that is two targets with different SWA asymmetry sensitivity that have been exposed with the same focus value, is determined from this, the value of the focus functions of G 1 (Z) and G 2 (Z) then being determined from the measured SWA asymmetries and simulations of the test wafer in step S 3 .
  • step S 4 The same patterns are used to produce equivalent gratings on a production wafer in step S 4 , the ratio of the measured SWA asymmetries being determined in step S 5 .
  • the value of the focus term Z is then derived from the ratio and the previously determined G 1 (Z) and G 2 (Z) functions in step S 6 .
  • FIG. 8 this figure illustrates an example of the form of the functions G 1 (Z) and G 2 (Z) for the gratings produced on the test wafer in step S 1 , these functions being determined in step S 3 , according to an embodiment of the present invention.
  • FIG. 9 illustrates the result of using a method, in accordance with an embodiment of the invention.
  • the uppermost curve has been deliberately shifted 0.2 nm in the upward direction for clarity, as in reality the curves overlap to within 0.007 nm.
  • the uppermost curve shows the error in the measured focus over a ⁇ 50 to a +50 nm focus range for a grating structure on a nominal BARC thickness of 40 nm, while the lower curve shows the equivalent error for a grating structure on a nominal BARC thickness of 38 nm.
  • the height of the resist lines is 60 nm and the pitch of both gratings was 600 nm, with the nominal mid CD being set to 310 nm.
  • the data was obtained by measuring the asymmetry of only 1 pixel pair in the +1 and ⁇ 1 diffraction orders. As can be seen, the error is in the order of a few nm, which should be appropriate for focus monitoring applications in lithographic processing. Furthermore a 2 nm BARC thickness variation has virtually no impact on the measured focus value.
  • lithographic apparatus in the manufacture of ICs
  • the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin film magnetic heads, etc.
  • LCDs liquid-crystal displays
  • any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively.
  • the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • imprint lithography in a patterning device defines the pattern created on a substrate.
  • the topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof.
  • the patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
  • UV radiation e.g., having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm
  • EUV radiation e.g., having a wavelength in the range of 5-20 nm
  • particle beams such as ion beams or electron beams.
  • lens may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
  • the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g., semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
  • a data storage medium e.g., semiconductor memory, magnetic or optical disk

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110027704A1 (en) * 2009-07-31 2011-02-03 Asml Netherlands B.V. Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells
US9360770B2 (en) 2011-08-31 2016-06-07 Asml Netherlands B.V. Method of determining focus corrections, lithographic processing cell and device manufacturing method
US9704810B2 (en) 2011-08-30 2017-07-11 Asml Netherlands B.V. Method and apparatus for determining an overlay error
US9952517B2 (en) 2014-06-30 2018-04-24 Asml Netherlands B.V. Method of determining dose, inspection apparatus, patterning device, substrate and device manufacturing method
US9964853B2 (en) 2012-11-30 2018-05-08 Asml Netherlands B.V. Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method
US10417359B2 (en) 2015-12-17 2019-09-17 Asml Netherlands B.V. Optical metrology of lithographic processes using asymmetric sub-resolution features to enhance measurement
WO2019192865A1 (en) 2018-04-06 2019-10-10 Asml Netherlands B.V. Inspection apparatus having non-linear optics

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US9182682B2 (en) 2008-12-30 2015-11-10 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
WO2012010458A1 (en) * 2010-07-19 2012-01-26 Asml Netherlands B.V. Method and apparatus for determining an overlay error
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US9411249B2 (en) 2013-09-23 2016-08-09 Globalfoundries Inc. Differential dose and focus monitor
US9784690B2 (en) * 2014-05-12 2017-10-10 Kla-Tencor Corporation Apparatus, techniques, and target designs for measuring semiconductor parameters
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US9766554B2 (en) 2015-03-16 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for estimating focus and dose of an exposure process
JP6723269B2 (ja) 2015-05-15 2020-07-15 ケーエルエー コーポレイション 焦点感応オーバーレイターゲットを使用する焦点決定のためのシステムおよび方法

Citations (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120118A (ja) 1992-10-09 1994-04-28 Hitachi Ltd レンズ収差測定方法およびそれを用いた露光装置
JPH08213306A (ja) 1995-02-08 1996-08-20 Nikon Corp 位置検出装置及び該装置を備えた投影露光装置
JPH10154647A (ja) 1996-11-22 1998-06-09 Matsushita Electron Corp パターン形成異常検出方法
US5783833A (en) 1994-12-12 1998-07-21 Nikon Corporation Method and apparatus for alignment with a substrate, using coma imparting optics
JP2000077295A (ja) 1998-08-28 2000-03-14 Nikon Corp 光学系の検査装置および検査方法並びに該検査装置を備えた位置合わせ装置および投影露光装置
JP2000114158A (ja) 1998-10-01 2000-04-21 Canon Inc 露光条件測定方法及びそれを用いた露光装置
JP2001250760A (ja) 2000-03-06 2001-09-14 Nikon Corp 収差計測方法、該方法を使用するマーク検出方法、及び露光方法
US20030048458A1 (en) 2001-06-26 2003-03-13 Walter Mieher Method for determining lithographic focus and exposure
US6674511B2 (en) 2000-08-09 2004-01-06 Kabushiki Kaisha Toshiba Evaluation mask, focus measuring method and aberration measuring method
US20040190008A1 (en) 2003-01-17 2004-09-30 Kla-Tencor Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
US6833309B2 (en) * 2002-01-30 2004-12-21 Renesas Technology Corporation Method of manufacturing a semiconductor device
JP2005109016A (ja) 2003-09-29 2005-04-21 Fujitsu Ltd 焦点計測方法及び装置、並びに半導体装置の製造方法
JP2005513757A (ja) 2001-06-26 2005-05-12 ケーエルエー−テンカー・コーポレーション リソグラフィのフォーカスおよび露光を決定する方法
US6975399B2 (en) 1998-08-28 2005-12-13 Nikon Corporation mark position detecting apparatus
EP1628164A2 (en) 2004-08-16 2006-02-22 ASML Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterisation
US20060250598A1 (en) 2005-05-09 2006-11-09 Canon Kabushiki Kaisha Exposure apparatus and method
US20070050749A1 (en) 2005-08-31 2007-03-01 Brion Technologies, Inc. Method for identifying and using process window signature patterns for lithography process control
US20070052948A1 (en) * 2002-11-01 2007-03-08 Asml Netherlands B.V. Test pattern, inspection method, and device manufacturing method
TW200737295A (en) 2006-03-17 2007-10-01 United Microelectronics Corp Method for detecting semiconductor manufacturing conditions
TW200739276A (en) 2006-01-05 2007-10-16 Canon Kk Method and program for calculating exposure dose and focus position in exposure apparatus, and device manufacturing method
US20080018874A1 (en) 2006-07-18 2008-01-24 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
WO2008015973A1 (fr) 2006-08-02 2008-02-07 Nikon Corporation Appareil de détection de défauts et procédé de détection de défauts
US20080043239A1 (en) 2006-08-15 2008-02-21 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
TW200821770A (en) 2006-09-25 2008-05-16 Asml Netherlands Bv Method and apparatus for angular-resolved spectroscopic lithography characterization
US20080180647A1 (en) 2007-01-25 2008-07-31 Elpida Memory, Inc. Focus monitor mark, focus monitoring method, and device production method
TW200832584A (en) 2006-11-30 2008-08-01 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7495782B2 (en) * 1999-07-09 2009-02-24 Nova Measuring Instruments Ltd. Method and system for measuring patterned structures
US7599064B2 (en) * 2007-03-07 2009-10-06 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method, substrate for use in the methods
US7911612B2 (en) * 2007-06-13 2011-03-22 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US20110249247A1 (en) 2008-12-30 2011-10-13 Asml Netherlands B.V. Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692792B2 (en) * 2006-06-22 2010-04-06 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20080135774A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Scatterometer, a lithographic apparatus and a focus analysis method
US7619737B2 (en) 2007-01-22 2009-11-17 Asml Netherlands B.V Method of measurement, an inspection apparatus and a lithographic apparatus
CN101226344B (zh) * 2008-01-31 2010-06-02 上海微电子装备有限公司 测量光学系统参数的测量装置及其测量方法

Patent Citations (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120118A (ja) 1992-10-09 1994-04-28 Hitachi Ltd レンズ収差測定方法およびそれを用いた露光装置
US5783833A (en) 1994-12-12 1998-07-21 Nikon Corporation Method and apparatus for alignment with a substrate, using coma imparting optics
JPH08213306A (ja) 1995-02-08 1996-08-20 Nikon Corp 位置検出装置及び該装置を備えた投影露光装置
JPH10154647A (ja) 1996-11-22 1998-06-09 Matsushita Electron Corp パターン形成異常検出方法
US6975399B2 (en) 1998-08-28 2005-12-13 Nikon Corporation mark position detecting apparatus
JP2000077295A (ja) 1998-08-28 2000-03-14 Nikon Corp 光学系の検査装置および検査方法並びに該検査装置を備えた位置合わせ装置および投影露光装置
JP2000114158A (ja) 1998-10-01 2000-04-21 Canon Inc 露光条件測定方法及びそれを用いた露光装置
US7495782B2 (en) * 1999-07-09 2009-02-24 Nova Measuring Instruments Ltd. Method and system for measuring patterned structures
JP2001250760A (ja) 2000-03-06 2001-09-14 Nikon Corp 収差計測方法、該方法を使用するマーク検出方法、及び露光方法
US6674511B2 (en) 2000-08-09 2004-01-06 Kabushiki Kaisha Toshiba Evaluation mask, focus measuring method and aberration measuring method
JP2005513757A (ja) 2001-06-26 2005-05-12 ケーエルエー−テンカー・コーポレーション リソグラフィのフォーカスおよび露光を決定する方法
US7382447B2 (en) 2001-06-26 2008-06-03 Kla-Tencor Technologies Corporation Method for determining lithographic focus and exposure
US20030048458A1 (en) 2001-06-26 2003-03-13 Walter Mieher Method for determining lithographic focus and exposure
US6833309B2 (en) * 2002-01-30 2004-12-21 Renesas Technology Corporation Method of manufacturing a semiconductor device
US20070052948A1 (en) * 2002-11-01 2007-03-08 Asml Netherlands B.V. Test pattern, inspection method, and device manufacturing method
US20040190008A1 (en) 2003-01-17 2004-09-30 Kla-Tencor Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
JP2005109016A (ja) 2003-09-29 2005-04-21 Fujitsu Ltd 焦点計測方法及び装置、並びに半導体装置の製造方法
US7414713B2 (en) 2003-09-29 2008-08-19 Fujitsu Limited Method of measuring focal point, instrument used therefor, and method of fabricating semiconductor device
EP1628164A2 (en) 2004-08-16 2006-02-22 ASML Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterisation
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
JP2006060214A (ja) 2004-08-16 2006-03-02 Asml Netherlands Bv 角度分解した分光リソグラフィの特徴付けの方法および装置
JP2006313866A (ja) 2005-05-09 2006-11-16 Canon Inc 露光装置及び方法
US20060250598A1 (en) 2005-05-09 2006-11-09 Canon Kabushiki Kaisha Exposure apparatus and method
US20070050749A1 (en) 2005-08-31 2007-03-01 Brion Technologies, Inc. Method for identifying and using process window signature patterns for lithography process control
TW200739276A (en) 2006-01-05 2007-10-16 Canon Kk Method and program for calculating exposure dose and focus position in exposure apparatus, and device manufacturing method
US7771905B2 (en) 2006-01-05 2010-08-10 Canon Kabushiki Kaisha Method and program for calculating exposure dose and focus position in exposure apparatus, and device manufacturing method
TW200737295A (en) 2006-03-17 2007-10-01 United Microelectronics Corp Method for detecting semiconductor manufacturing conditions
TW200813654A (en) 2006-07-18 2008-03-16 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7916284B2 (en) 2006-07-18 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US20080018874A1 (en) 2006-07-18 2008-01-24 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
JP2008028389A (ja) 2006-07-18 2008-02-07 Asml Netherlands Bv インスペクション方法およびインスペクション装置、リソグラフィ装置、リソグラフィ処理セルならびにデバイス製造方法
US20090147247A1 (en) 2006-08-02 2009-06-11 Nikon Corporation Defect detecting apparatus and defect detecting method
WO2008015973A1 (fr) 2006-08-02 2008-02-07 Nikon Corporation Appareil de détection de défauts et procédé de détection de défauts
US20080043239A1 (en) 2006-08-15 2008-02-21 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7573584B2 (en) 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
TW200821770A (en) 2006-09-25 2008-05-16 Asml Netherlands Bv Method and apparatus for angular-resolved spectroscopic lithography characterization
US7710572B2 (en) 2006-11-30 2010-05-04 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
TW200832584A (en) 2006-11-30 2008-08-01 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
JP2008182097A (ja) 2007-01-25 2008-08-07 Elpida Memory Inc フォーカスモニタ用マーク、フォーカスモニタ方法及びデバイス製造方法
US20080180647A1 (en) 2007-01-25 2008-07-31 Elpida Memory, Inc. Focus monitor mark, focus monitoring method, and device production method
US7599064B2 (en) * 2007-03-07 2009-10-06 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method, substrate for use in the methods
US7911612B2 (en) * 2007-06-13 2011-03-22 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US20110249247A1 (en) 2008-12-30 2011-10-13 Asml Netherlands B.V. Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method

Non-Patent Citations (13)

* Cited by examiner, † Cited by third party
Title
English-Language Abstract for Japanese Patent Publication No. 06-120118 A, published Apr. 28, 1994; 1 page.
English-Language Abstract for Japanese Patent Publication No. 10-154647 A, published Jun. 9, 1998; 1 page.
English-Language Abstract for Japanese Patent Publication No. 2000-114158 A, published Apr. 21, 2000; 1 page.
English-Language Abstract for Japanese Patent Publication No. 2001-250760 A, published September 14, 2001; 1 page.
English-Language Abstract for Taiwanese Patent Publication No. 200737295 A, published October 1, 2007; 1 page.
Final Rejection mailed Jun. 3, 2014 for U.S. Appl. No. 13/140,292, filed Jun. 16, 2011; 22 pages.
Hung, K., et al.; "Scatterometry Measurements of Line End Shortening Structures for Focus-Exposure Monitoring," Proc. of SPIE 6152:6152W-1-6152W-12, Metrology, Inspection, and Process Control for Microlithography XX, 2006 12 pages.
International Preliminary Report on Patentability with the Written Opinion of the International Searching Authority directed to related International Patent Application No. PCT/EP2009/067403, issued Jul. 5, 2011, from the International Bureau of WIPO; 9 pages.
International Preliminary Report on Patentability with the Written Opinion of the International Searching Authority directed to related International Patent Application No. PCT/EP2010/056016, issued Nov. 15, 2011, from the International Bureau of WIPO; 9 pages.
International Search Report directed to related International Patent Application No. PCT/EP2009/067403, mailed Jul. 22, 2010, from the European Patent Office; 4 pages.
International Search Report directed to related International Patent Application No. PCT/EP2010/056016, mailed Aug. 26, 2010, from the European Patent Office; 3 pages.
Non-Final Rejection mailed Nov. 13, 2013 for U.S. Appl. No. 13/140,292, filed Jun. 16, 2011; 24 pages.
Yuito, T., et al., "Fresnel diffraction mask for focus monitoring," J. Vac. Sci. Technol. 22(3):977-980, American Vacuum Society, 2004; pp. 977-980.

Cited By (10)

* Cited by examiner, † Cited by third party
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US20110027704A1 (en) * 2009-07-31 2011-02-03 Asml Netherlands B.V. Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells
US9081303B2 (en) * 2009-07-31 2015-07-14 Asml Netherlands B.V. Methods and scatterometers, lithographic systems, and lithographic processing cells
US9704810B2 (en) 2011-08-30 2017-07-11 Asml Netherlands B.V. Method and apparatus for determining an overlay error
US9360770B2 (en) 2011-08-31 2016-06-07 Asml Netherlands B.V. Method of determining focus corrections, lithographic processing cell and device manufacturing method
US9360769B2 (en) 2011-08-31 2016-06-07 Asml Netherlands B.V. Method of determining focus corrections, lithographic processing cell and device manufacturing method
US9964853B2 (en) 2012-11-30 2018-05-08 Asml Netherlands B.V. Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method
US9952517B2 (en) 2014-06-30 2018-04-24 Asml Netherlands B.V. Method of determining dose, inspection apparatus, patterning device, substrate and device manufacturing method
US10417359B2 (en) 2015-12-17 2019-09-17 Asml Netherlands B.V. Optical metrology of lithographic processes using asymmetric sub-resolution features to enhance measurement
WO2019192865A1 (en) 2018-04-06 2019-10-10 Asml Netherlands B.V. Inspection apparatus having non-linear optics
US10809193B2 (en) 2018-04-06 2020-10-20 Asml Netherlands B.V. Inspection apparatus having non-linear optics

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CN102422227A (zh) 2012-04-18
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