US8470184B2 - Method for making a cavity in the thickness of a substrate which may form a site for receiving a component - Google Patents

Method for making a cavity in the thickness of a substrate which may form a site for receiving a component Download PDF

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US8470184B2
US8470184B2 US13/264,170 US201013264170A US8470184B2 US 8470184 B2 US8470184 B2 US 8470184B2 US 201013264170 A US201013264170 A US 201013264170A US 8470184 B2 US8470184 B2 US 8470184B2
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substrate
interface
adhesive bonding
sacrificial
making
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US20120031874A1 (en
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Damien Saint-Patrice
Sebastien Bolis
Fabrice Jacquet
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities

Definitions

  • the present invention relates to the field of electronic or electromechanical or optical or optoelectronic micro-systems or of chemical or biological measurement micro-systems, and provides a method for making in a substrate one or more cavities which may form sites for receiving one or more electronic, optical components or chemical or biological detection components, or components of the Micro-Electro-Mechanical System (MEMS) type or of the Micro-Opto-Electro-Mechanical system (MOEMS) type, firmly attached to the substrate.
  • MEMS Micro-Electro-Mechanical System
  • MOEMS Micro-Opto-Electro-Mechanical system
  • the invention proposes to overcome this problem.
  • the cavity(ies) formed in the first substrate may be provided for forming sites for receiving components.
  • the first substrate and the second substrate are assembled via an adhesive bonding interface.
  • the adhesive bonding may be molecular bonding or bonding with provision of material.
  • the adhesive bonding interface between the first substrate and the second substrate is discontinuous and comprises areas based on at least one adhesive bonding material, and other areas forming an empty space between the first substrate and the second substrate.
  • the invention therefore uses a discontinuous adhesive bonding interface. This allows easier removal of the sacrificial block since, in this case, the removal does not require any etching.
  • the adhesive bonding interface is a molecular bonding interface which is structured so as to have molecular bonding areas and empty areas without any molecular bonding.
  • the areas forming an empty space between the first and the second substrate may have a distribution provided according to that of the sacrificial block and be formed facing the latter.
  • the discontinuous adhesive bonding interface between the first substrate and the second substrate, may comprise areas based on at least one first adhesive bonding material, and areas based on at least one second adhesive bonding material, in particular a meltable material, located facing the sacrificial blocks.
  • the second adhesive bonding material may be provided for achieving provisional or temporary adhesive bonding and may be intended to be removed later on.
  • the interface between the first substrate and the second substrate may include electrically conducting areas.
  • an electric connection between the first substrate and the second substrate may be achieved.
  • the method may further comprise: the making of at least one other trench in the second substrate facing said sacrificial block or in the extension of said first cavity.
  • This other trench may be made around another sacrificial block located facing said sacrificial block.
  • the method may then further comprise the removal of said other sacrificial block so as to form a cavity in the second substrate facing said sacrificial block or in the extension of said first cavity.
  • the removal of the sacrificial block may be achieved by partial etching of the adhesive bonding interface.
  • the method may comprise the formation of a protective layer covering the first substrate, and then prior to step b), the removal of the protective layer on the sacrificial block.
  • the sacrificial block is not protected by this protective layer and may be removed.
  • the first substrate and/or the second substrate may be provided with conductive through-elements, in contact with said conducting areas.
  • the formation of the trenches may comprise the making of patterns in the first substrate so as to form a test pattern or a visual mark around the sacrificial blocks, these patterns being intended to indicate the center of the cavities. These patterns may also be intended for forming mechanical guiding means. In this case, self-centering of a component intended to be placed in the cavity and being supported on the mechanical guiding means, may be applied.
  • the first substrate and the second substrate may be formed with different materials.
  • the second substrate may be assembled to a third substrate via another interface, the method further comprising:
  • the method may further comprise, after step b), the making of at least one element in the first cavity.
  • This element may be an electronic, RF, optoelectronic component, a chemical or biological detector or a chemical or biological element.
  • FIGS. 1A-1G illustrate an exemplary method for making a micro-device comprising substrates assembled together via an adhesive bonding layer, and provided with cavities made in the thickness of at least one of the substrates and which may form sites for receiving components;
  • FIGS. 2A-2D , and 3 illustrate another exemplary method for making a micro-device comprising substrates adhesively bonded together via a discontinuous adhesive bonding interface, and provided with cavities formed in the thickness of at least one of the substrates and which may form sites for receiving components;
  • FIGS. 4A-4B illustrate an exemplary method for removing sacrificial blocks, which may be applied during a method according to the invention
  • FIGS. 5A-5D illustrate an alternative method according to the invention
  • FIG. 6 illustrates an exemplary micro-device applied by means of a method according to the invention comprising substrates assembled together, and provided with sites for receiving components, at least one of the substrates being provided with conducting vias crossing its thickness;
  • FIG. 7 illustrates an exemplary micro-device applied by means of a method according to the invention, comprising substrates assembled together, and provided with components housed in receiving sites in the thickness of at least one of the substrates;
  • FIGS. 8A and 8B illustrate an exemplary embodiment of a micro-device applied according to the invention, wherein components are housed in cavities forming receiving sites in the thickness of at least one substrate, the components being coated in a protective material;
  • FIGS. 9A and 9B illustrate an exemplary embodiment of a micro-device applied according to the invention, provided with receiving sites formed in the thickness of three substrates adhesively bonded together;
  • FIGS. 10A and 10B illustrate steps for making sites for receiving components in the thickness of substrates assembled together, during which specific patterns are formed and intended to be used as marks indicating the center of the sites in which the components are intended to be placed or as guiding means for the components so as to guide the components when the latter are placed in the receiving sites;
  • FIGS. 11 to 13 illustrate different exemplary devices applied according to the invention and formed with assembled substrates in which sites for receiving components have been made.
  • FIGS. 1A-1G An exemplary method for making a micro-electronic device according to the invention, will now be given in connection with FIGS. 1A-1G (the device being seen in FIGS. 1A-1B and 1 D- 1 G according to a cross-sectional view A′-A, only the elements located in the sectional plane being illustrated in these figures).
  • the starting material of this method may be a substrate 100 , based on a first material 101 , which may be semiconducting, such as silicon or germanium and have a thickness Ea which may be comprised between 10 ⁇ m and 1,000 ⁇ m.
  • a first material 101 which may be semiconducting, such as silicon or germanium and have a thickness Ea which may be comprised between 10 ⁇ m and 1,000 ⁇ m.
  • a second substrate 200 is joined to the substrate 100 , for example by an adhesive bonding method such as molecular bonding or bonding with provision of material.
  • the substrate 200 may also be based on at least one second material 201 , which may be a semiconductor such as Si or Ge, and have a thickness Eb which may be comprised between 10 ⁇ m and 1,000 ⁇ m, for example between 10 and 1000 ⁇ m.
  • second material 201 which may be a semiconductor such as Si or Ge, and have a thickness Eb which may be comprised between 10 ⁇ m and 1,000 ⁇ m, for example between 10 and 1000 ⁇ m.
  • the second substrate 200 may be based on a material 201 different from the material 101 of the substrate 100 , for example a semi-conducting material different from the one of the first substrate 100 .
  • an assembly of a first glass substrate and of a second glass substrate, or of a glass substrate and of a silicon substrate, or of a ceramic substrate and a glass substrate, or of a glass substrate and of a polymeric substrate, or of a Si substrate and a polymeric substrate, may be achieved.
  • the bonding of the substrate 100 and 200 may be a so-called “full plate” bonding, wherein, at the bonding interface, is found a continuous adhesive bonding layer 150 , in contact between the two substrates 100 and 200 .
  • the bonding interface may for example be a layer 150 of silicon oxide or several stacked layers 150 of silicon oxide, this in order to form silicon/silicon oxide type interfaces and optionally a silicon oxide/silicon oxide interface ( FIG. 1A ).
  • a mask 103 may be made on the substrate 100 with view to etching the latter.
  • the etching mask 103 may for example be based on a resin layer lying on a silicon oxide layer which may be formed by deposition such as by a deposition of the PECVD (plasma-enhanced chemical vapor deposition) type or by thermal oxidation.
  • PECVD plasma-enhanced chemical vapor deposition
  • Photolithographic and then etching steps may allow definition of the patterns of the etching mask 103 ( FIG. 1B ).
  • one or more trenches 105 are formed by etching the substrate 100 through the mask in the first substrate 100 , surrounding blocks 107 of the latter, which will be called “sacrificial blocks”.
  • the trenches 105 each form a contour around a sacrificial block 107 of the substrate 100 , which is cut out and intended to be removed later on ( FIG. 1C ).
  • the trenches 105 are provided so as to expose the adhesive bonding layer 150 .
  • the trenches 105 may have a thickness at least equal to Ea and open out onto the bonding interface between the substrates, or optionally cross this interface.
  • the trenches 105 may have a critical dimension dc of the order of 10 ⁇ m for example when they are made by DRIE etching of a substrate having a thickness Ea, for example of the order of 720 ⁇ m.
  • critical dimension is meant the smallest dimension of a pattern made in a layer or a stack of layers except for its thickness (the critical dimension being measured in these figures in a direction parallel to that of the plane [O; ⁇ right arrow over (i) ⁇ ; ⁇ right arrow over (j) ⁇ ] of the orthogonal reference system [O; ⁇ right arrow over (i) ⁇ ; ⁇ right arrow over (j) ⁇ ; ⁇ right arrow over (k) ⁇ ]).
  • the trenches 105 may optionally open out into the second substrate 200 .
  • the etching of the trenches 105 may be carried out with a laser etching method or by deep plasma etching.
  • etching such as deep reactive ion etching also called DRIE (for Deep Reactive Ion Etching)
  • significant selectivity may be obtained relatively to the silicon oxide of the bonding layer 150 , so that the etching may stop on the bonding interface when the latter is based on silicon oxide ( FIG. 1D ).
  • the removal of the sacrificial blocks 107 may be achieved by etching the layer 150 or adhesive bonding layers 150 at the interface between the substrate 100 and 200 through the trenches 105 . Thus, the material of the bonding layer 150 under the sacrificial blocks 107 is removed.
  • etching for example with HF may be carried out.
  • cavities 109 may form sites for receiving one or more components which may be electronic, and/or optical, and/or opto-electronic, and/or electromechanical, and/or for chemical or biological detection ( FIG. 1E ).
  • secondary trenches may be formed in the sacrificial blocks 107 , in order to subsequently facilitate etching of the adhesive bonding interface 150 and/or avoid over-etching.
  • the optical components formed in the cavities 109 may for example be lenses, or filters such as for example IR filters.
  • the electronic components formed in the cavities may for example be integrated circuits, or memories, or microprocessors, or converters.
  • the components may be MEMSes or for example getters.
  • the structure made may be intended to form a cap of a MEMS component.
  • the method may comprise the formation of other trenches 205 in the second substrate 200 , located between the trenches 105 . These other trenches 205 may be made prior to the removal of the sacrificial blocks 107 , facing the latter ( FIG. 1F ).
  • the other trenches 205 may also be made around sacrificial blocks 207 of the second substrate 200 , so as to form contours around these blocks 207 .
  • the trenches 205 may be formed through an etching mask 203 , deposited on the second substrate 200 and which may be similar to the mask 103 , made with view to forming the trenches 205 .
  • the other trenches 205 may optionally be formed facing the trenches 105 or in the extension of the latter.
  • the trenches 205 are made so that a small volume of material of the second substrate 200 is removed around the sacrificial blocks 207 .
  • the trenches 205 may have a thickness equal to Eb, and a critical dimension dc which may for example be of the order of several micrometers.
  • the formation of the other trenches 205 , and a removal of the sacrificial blocks 207 of the second substrate 200 allow creation of apertures 209 in the second substrate 200 , in the extension of the cavities 109 ( FIG. 1G ).
  • other secondary trenches may be formed in the sacrificial blocks 207 of the second substrate 200 , in order to subsequently facilitate etching of the adhesive bonding interface 150 and/or avoid over-etching.
  • Removal of the sacrificial blocks 207 may, like that of the sacrificial blocks 107 , be achieved by etching the adhesive bonding layer 150 .
  • etching may be carried out for example with HF.
  • removal of the sacrificial blocks 107 and 207 may be achieved simultaneously, by etching of the adhesive bonding layer 150 through the trenches 209 and/or trenches 109 .
  • the substrates 100 and 200 may be joined by adhesive bonding, by making this time a discontinuous adhesive bonding interface between the first substrate 100 and the second substrate 200 .
  • FIGS. 2A-2D and 3 illustrate such an alternative.
  • the discontinuous interface may be achieved so that certain areas 250 b of this interface between the two substrates 100 and 200 do not include any adhesive bonding material and form an empty space between the substrates 100 and 200 , while other areas 250 a based on a given adhesive bonding material, ensure the adhesive bonding between the substrates 100 and 200 .
  • the empty areas 250 b between the two substrates 100 and 200 may be positioned according to the distribution of said “sacrificial blocks” 107 of the first substrate 100 , which are intended to be suppressed.
  • the areas 250 b may be placed facing said “sacrificial” blocks 107 of the first substrate 100 , so that the sacrificial blocks 107 of the first substrate 100 and the second substrate 200 are separated by empty areas 250 b ( FIG. 2A ).
  • the bonding areas 250 a may be based on an electrically conducting material such as a metal material, which may give the possibility of ensuring electrical continuity between the substrates 100 and 200 .
  • the conducting material may for example be a metal alloy such as AuSn, or be based on copper, or for example formed with superposed copper layers.
  • the adhesively bonded substrates 100 and 200 may be of different natures, optionally with respective expansion coefficients far from each other.
  • steps for making an etching mask 103 , and then trenches by etching the first substrate 100 through the etching mask 103 may be carried out, for example in the way described earlier in connection with FIGS. 1A-1D .
  • the trenches 105 are made so as to expose the adhesive bonding interface by etching and may optionally be extended as far as into the second substrate 200 , beyond the adhesive bonding interface, for example so as to cross a controlled thickness Ei of the second substrate 200 .
  • the trenches 105 may be made facing the areas 250 b , or so as to end up with the areas 250 b , or to cross the areas 250 b , which, between the two substrates 100 and 200 , do not include any adhesive bonding material.
  • the layout of the areas 250 a and 250 b of the adhesive bonding interface and that of the trenches 105 is provided so that the sacrificial blocks 107 surrounded by the trenches 105 are maintained adhesively bonded to the substrate 200 through adhesive bonding areas 250 a located in proximity to the trenches 105 , while an empty space is provided between the center of the sacrificial blocks 107 and the substrate 200 .
  • the blocks 107 may be held adhesively bonded to the substrate 200 , while ensuring that the adhesion to the substrate 200 is sufficiently low so that they may be easily removed later on.
  • the discontinuous adhesive bonding interface may have been made so that certain areas 250 b of the interface between the two substrates 100 and 200 do not include any adhesive bonding material and form an empty space between the substrates 100 and 200 , while areas 250 a and 250 c of different adhesive bonding materials are provided.
  • Areas 250 a of a first adhesive bonding material and areas 250 c based on a second adhesive bonding material ensure the adhesive bonding between the substrates 100 and 200 .
  • the areas 250 a , 250 c between the two substrates 100 and 200 are distributed according to that of the sacrificial blocks 107 of the substrate 100 intended to be suppressed.
  • the first material of the areas 250 a may for example be based on a conducting material.
  • the sacrificial blocks 107 may be positioned facing the areas 250 c based on the second adhesive bonding material.
  • the second adhesive bonding material may advantageously be a material which may be removed subsequently from the substrates or detached from the substrates, for example by means of a solvent or by heating.
  • the second adhesive bonding material may for example be an adhesive or a sealing resin.
  • the second adhesive bonding material may be provided for carrying out temporary adhesive bonding and may be intended to be suppressed.
  • the second adhesive bonding material may be selected as a material which may be selectively removed with respect to the first material or more easily to remove than the first material.
  • the second adhesive bonding material is a polymer of the resin or adhesive type
  • this material may be dissolved by means of at least one solvent for example based on acetone, fuming nitric acid, or a plasma for example based on O 2 +SF 6 .
  • the layout of the areas 250 c of the adhesive bonding interface and that of the trenches 105 is provided so that the sacrificial blocks 107 surrounded by the trenches 105 , are maintained bonded to the substrate 200 through the areas 250 c based on the meltable material; an empty space may be provided between the sacrificial blocks 107 and the substrate 100 , this in order to provisionally maintain the blocks 107 bonded to the substrate 200 , while allowing them to be removed easily later on.
  • a specific adhesive bonding interface was formed facing the sacrificial blocks, this interface being different from that provided for adhesively bonding the other areas of the substrates 100 and 200 .
  • This specific adhesive bonding interface may give the possibility of maintaining provisionally bonded the sacrificial blocks 107 .
  • the specific adhesive bonding interface may be provided so as to be suppressed or to have a sufficiently low mechanical strength so as to allow subsequent separation of the sacrificial blocks 107 from the substrate 200 .
  • the sacrificial blocks 107 inside the latter may be removed ( FIGS. 2C and 2D ).
  • the removal of the sacrificial blocks 107 may be carried out in a similar way to the one described earlier in connection with FIG. 1E , in which etching is carried out through the trenches ( FIG. 2C ).
  • the removal of the sacrificial blocks 107 may be carried out in a way similar to the one described earlier in connection with FIG. 1G , by forming beforehand the trenches 205 in the second substrate 200 , and then by carrying out etching through the trenches 105 and/or the trenches 205 ( FIG. 2D ).
  • the adhesive bonding interface between the substrates 100 and 200 is a molecular bonding interface. It is structured so as to include molecular bonding areas and empty areas, without molecular bonding.
  • FIGS. 4A-4B another exemplary method for removing the sacrificial blocks 107 is given.
  • the adhesive film is removed so as to recover the sacrificial blocks 107 ( FIG. 4B ).
  • FIGS. 5A-5D Another exemplary method for removing the sacrificial blocks will now be given in connection with FIGS. 5A-5D .
  • the sacrificial blocks are removed by etching the material 101 on the basis of which the latter are formed.
  • the protective layer 410 may for example be a layer based on SiO 2 , with a thickness of the order of 1 ⁇ m. This SiO 2 layer may for example be made after having removed the etching mask 103 , by thermal oxidation of the substrate 100 during high temperature annealing.
  • the thickness of the protective layer 410 may be provided so as to be less than that of the adhesive bonding layer 150 located at the interface between both substrates 100 and 200 , in particular in the case when the adhesive bonding layer 150 and the protective layer are formed with a same material such as SiO 2 .
  • the protective layer 410 is then removed locally in an area located above the sacrificial blocks 107 ( FIG. 5B ).
  • the sacrificial blocks 107 are etched.
  • this etching may for example be achieved with KOH or TMAH ( FIG. 5C ).
  • the protective layer 410 is removed. This removal may for example be achieved by etching with an HF solution.
  • conducting elements commonly called vias may be provided in the first substrate 100 and/or the second substrate 200 .
  • the substrate 100 is provided with conducting elements 510 crossing the thickness of the latter and which are in contact with conducting areas 250 a of the bonding interface, when the latter is for example formed with a plurality of separated metal areas.
  • the conducting through-elements 510 may have been formed beforehand, so that the starting material of the method is a substrate 100 provided with conducting through-elements 510 , or after having carried out a succession of method steps as described earlier.
  • Such an arrangement may be used for example for applications to 3D imaging devices provided with several substrates interconnected via inter-substrate vias.
  • components C may be placed in these cavities 109 .
  • These components C may for example be electronic chips or optical components, or MEMSes (MEMSes for electro-mechanical microsystems) ( FIG. 7 ).
  • a coating material 550 may then be positioned in the cavities 109 in order to protect the components C located in the latter ( FIG. 8A ).
  • the coating material may for example be an encapsulation resin such as an epoxy resin and commonly called a “glop-top”.
  • a step for separating the 2 substrates 100 and 200 may then optionally be carried out ( FIG. 8B ), for example by etching the adhesive bonding layer or by using a temporary adhesive bonding interface.
  • a method according to the invention may be applied on more than two substrates.
  • FIGS. 9A-9B an exemplary method is illustrated, in which sites for receiving components are formed in three adhesively bonded substrates 100 , 200 , 300 .
  • a second substrate 200 is joined for example by an adhesive bonding method such as molecular bonding or bonding with provision of material.
  • the bonding of the substrates 100 and 200 may be achieved with an adhesive bonding layer 150 between the two substrates 100 and 200 , for example a layer formed with one or several thicknesses of SiO 2 when the substrates are based on Si.
  • a third substrate 300 is joined, for example by an adhesive bonding method such as a molecular bonding or bonding with provision of material.
  • the bonding of the substrates 200 and 300 may be achieved with an adhesive bonding layer 350 between, for example a layer formed with one or several thicknesses of SiO 2 when the substrates 200 and 300 are based on Si.
  • an etching mask 103 may be made on the substrate 100 , with view to etching the latter.
  • one or more trenches 105 are formed by etching through the mask into the first substrate 100 , surrounding the sacrificial blocks 107 , as far as the layer 150 at the adhesive bonding interface between the substrates 100 and 200 .
  • the trenches 105 each form a contour around a sacrificial block 107 of the substrate 100 , which is cut out and intended to be removed later on.
  • one or more other trenches 215 may be formed by etching through the mask 103 into the first substrate 100 , so as to cross the sacrificial blocks 107 .
  • This etching may be achieved as far as the layer 350 at the bonding interface between the substrates 200 and 300 .
  • the trenches 215 may each form a contour around a sacrificial block 217 of the second substrate 200 , which is cut out and intended to be removed later on.
  • This etching may be achieved as far as the layer 350 at the adhesive bonding interface between the substrates 200 and 300 .
  • the trenches 305 may each form a contour around a sacrificial block 307 of the third substrate 300 , which is cut out and intended to be removed later on ( FIG. 9A ).
  • removal of the sacrificial blocks 107 , 207 , 307 is carried out.
  • the removal may be carried out for example by isotropic etching of a portion of the adhesive bonding layers 150 and 350 , in order to allow detachment of the sacrificial blocks 107 , 217 , 307 .
  • cavities 309 crossing the three substrates 100 , 200 , 300 are thereby formed. These cavities 309 may have walls forming a staircase profile.
  • the cavities 309 may be used as sites for receiving components, for example optical components ( FIG. 9B ).
  • trenches 105 when trenches 105 are made so as to cut out the sacrificial blocks 107 in the first substrate 100 , provision may be made for keeping on the walls of the trenches 105 , patterns M 1 , M 2 , M 3 , M 4 , and M′ 1 , M′ 2 , M′ 3 based on the material 101 of the first substrate, laid out so as to form visual indicators or test patterns for example indicating the center of the sacrificial blocks 107 when they have not been removed ( FIG. 10A ).
  • the patterns M 1 , M 2 , M 3 , M 4 , and M′ 1 , M′ 2 , M′ 3 based on the material 101 of the first substrate, may also be laid out so as to form guiding means for example indicating the center of the sacrificial blocks 107 when they have not been removed ( FIG. 10A ).
  • the patterns M 1 , M 2 , M 3 , M 4 , and M′ 1 , M ′ 2 , M ′ 3 based on the material 101 may indicate the center of the cavities forming sites for receiving components when the sacrificial blocks have been removed ( FIG. 10B ) and also optionally guiding means for giving the possibility of achieving accurate positioning or self-centering of the components placed in the cavities.
  • FIG. 12 An exemplary device applied by means of a method according to the invention is given in FIG. 12 .
  • This device includes a first substrate 100 based on a first material 101 and adhesively bonded to a second substrate 200 , based on the same material as the first substrate 101 .
  • Cavities 109 are formed in the first substrate 100 , and the second substrate 200 and form sites for receiving components C′, for example optical components such as filters or lenses.
  • FIG. 13 Another exemplary device applied by means of a method according to the invention is given in FIG. 13 and differs from the previous one, in that the first substrate is based on a material 111 different from that of the second substrate 200 .
  • a method according to the invention also gives the possibility of making structures with significant aperture levels and sites for receiving components, the positioning accuracy error being less than 5 ⁇ m.

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US13/264,170 2009-04-21 2010-04-20 Method for making a cavity in the thickness of a substrate which may form a site for receiving a component Active 2030-07-12 US8470184B2 (en)

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FR0952598A FR2944646B1 (fr) 2009-04-21 2009-04-21 Procede de realisation d'une cavite dans l'epaisseur d'un substrat pouvant former un site d'accueil de composant
FR0952598 2009-04-21
PCT/EP2010/055185 WO2010122015A1 (fr) 2009-04-21 2010-04-20 Procede de realisation d'une cavite dans l'epaisseur d'un substrat pouvant former un site d'accueil de composant

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FR2950154B1 (fr) 2009-09-15 2011-12-23 Commissariat Energie Atomique Dispositif optique a membrane deformable a actionnement piezoelectrique en forme de couronne continue
FR2950153B1 (fr) 2009-09-15 2011-12-23 Commissariat Energie Atomique Dispositif optique a membrane deformable a actionnement piezoelectrique
EP3339243B1 (fr) * 2016-12-23 2023-07-26 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Empilement de couches interconnectées avec des mems alignés verticalement et puce associée
CN112839440B (zh) * 2019-11-22 2022-04-19 欣兴电子股份有限公司 移除局部盖体的装置及移除局部盖体的方法

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US20120031874A1 (en) 2012-02-09
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EP2421792A1 (fr) 2012-02-29
FR2944646B1 (fr) 2012-03-23

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