US8101967B2 - Optical semiconductor package and optical semiconductor device - Google Patents
Optical semiconductor package and optical semiconductor device Download PDFInfo
- Publication number
- US8101967B2 US8101967B2 US13/024,582 US201113024582A US8101967B2 US 8101967 B2 US8101967 B2 US 8101967B2 US 201113024582 A US201113024582 A US 201113024582A US 8101967 B2 US8101967 B2 US 8101967B2
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- United States
- Prior art keywords
- optical semiconductor
- ring
- block
- semiconductor package
- leads
- Prior art date
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- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 99
- 230000003287 optical effect Effects 0.000 title claims description 97
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 26
- 238000002310 reflectometry Methods 0.000 claims description 30
- 239000003566 sealing material Substances 0.000 claims description 18
- 229910010272 inorganic material Inorganic materials 0.000 claims description 11
- 239000011147 inorganic material Substances 0.000 claims description 11
- 239000002241 glass-ceramic Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 51
- 239000002184 metal Substances 0.000 abstract description 51
- 238000002845 discoloration Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 11
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 238000006731 degradation reaction Methods 0.000 abstract description 10
- 239000011797 cavity material Substances 0.000 description 35
- 230000009467 reduction Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000006112 glass ceramic composition Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229910002696 Ag-Au Inorganic materials 0.000 description 1
- 229910017827 Cu—Fe Inorganic materials 0.000 description 1
- 241000272168 Laridae Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Definitions
- the present invention relates to an optical semiconductor package in which an optical semiconductor element such as an LED is mounted, and an optical semiconductor device using the optical semiconductor package.
- an element mounting part is provided for mounting the optical semiconductor element and leads are provided for electrically connecting the optical semiconductor element to an external circuit.
- the optical semiconductor element is mounted on the element mounting part of the optical semiconductor package and the optical semiconductor element and the leads are wire bonded and then are molded with a transparent resin, so that a semiconductor light emitting device is formed.
- FIG. 7 is a top view showing the external structure of an optical semiconductor package according to the related art.
- FIG. 8 is a sectional view showing the structure of the optical semiconductor package according to the related art, taken along line C-C′ of FIG. 7 .
- an optical semiconductor device having an optical semiconductor element mounted in the optical semiconductor package of the related art includes: a metal block 33 that has an optical semiconductor element 22 placed on an element mounting part on the major surface of the metal block 33 and is electrically connected to the optical semiconductor element 22 via a conductive adhesive 24 ; a lead 31 electrically connected to the optical semiconductor element 22 via a metal wire 26 ; a lead 32 electrically connected to the optical semiconductor element 22 through the metal block 33 by a metal wire 27 ; a light-transmissive member 16 that is made of a light-transmissive resin and covers the optical semiconductor element 22 ; and a base 14 .
- the base 14 is made of a light-shielding resin.
- the bottom of the base 14 supports the inner leads of the leads 31 and 32 and the metal block 33 , and the side of the base 14 supports the light-transmissive member 16 .
- a region surrounded by the base 14 , the inner leads, and the metal block 33 serves as a cavity region for mounting the optical semiconductor element 22 .
- the inner leads and the surface of the metal block 33 are coated with Ag to increase the reflectivity.
- the metal block 33 has a backside region corresponding to a mounting region for mounting the optical semiconductor element 22 and the backside region penetrates the bottom of the base 14 and is exposed to the outside as a heat dissipation region (e.g., see Japanese Patent Laid-Open No. 2001-185763).
- the reflectivity and the mechanical strength are reduced by the degradation of the base 14 made of a light-shielding resin.
- the base 14 made of a light-shielding resin around the metal block 33 for mounting the optical semiconductor element 22 is damaged by light (particularly, ultraviolet radiation) emitted from the optical semiconductor element 22 and heat emitted from the optical semiconductor element 22 through the metal block 33 .
- the light-shielding resin is typically a white thermoplastic resin having a high reflectivity. Because of external energy such as heat and ultraviolet radiation, a polymeric material becomes chemically unstable, a molecular structure causing discoloration is generated in the resin, and thus the resin mostly turns yellow. The discoloration of the light-shielding resin is concentrated in the bottom of the cavity which is most susceptible to direct light and heat from the optical semiconductor element 22 . The discoloration reduces a reflectivity on the inner surface of the cavity and an amount of light emitted from the light emitting device.
- the light-shielding resin is degraded by the influence of heat and ultraviolet radiation, a bonding strength between the base 14 and other components decreases, and the mechanical strength of the light-shielding resin also decreases, so that exfoliation, dropping, and so on of the light-shielding resin may cause a defective external shape.
- an object of an optical semiconductor package and an optical semiconductor device according to the present invention is to keep a reflectivity and a mechanical strength in the bottom of a cavity.
- an optical semiconductor package of the present invention includes: a base including a ring and a ring-shaped base bottom formed under the ring, the base bottom being larger in internal diameter than the ring; leads each of which include an outer lead serving as an external electrode; at least one block that is provided in the base bottom and has a partially exposed top surface in the ring; an element mounting part provided as a region for mounting an optical semiconductor element on the surface of the block exposed in the ring; a lead placement part formed as a region for placing the leads on the top surface of the block with a step formed between the lead placement part and the element mounting part; a sealing material that seals and holds the block and the leads in the region of the base bottom; and a cavity as a region surrounded by the side of the ring and the top surface of the block, wherein at least the top surface of the block is made of an inorganic material having a reflectivity of at least 83% at a light wavelength of 460 nm, and only the top surface of the block is exposed in the bottom
- the overall block may be made of the inorganic material having a reflectivity of at least 83% at a light wavelength of 460 nm.
- the inorganic material having an average reflectivity of at least 83% at a wavelength of 460 nm is an Au—Ag alloy.
- the block has a back side such that the back side opposed to the top surface of the block is exposed from the sealing material.
- the at least one block may include multiple blocks electrically isolated from each other.
- the ring is preferably made of one of a ceramic and a glass-ceramic.
- the ring is preferably composed of a highly-reflective glass-ceramic containing alumina of 50 mass % to 60 mass %.
- the sealing material is preferably composed of one of a glass and a thermosetting resin.
- An optical semiconductor device includes: the optical semiconductor package; the optical semiconductor element mounted on the element mounting part and electrically connected to the leads; and a light-transmissive resin for molding the inside of the cavity.
- FIG. 1 is a top view showing a structural example of an optical semiconductor package according to the present invention
- FIG. 2 is a sectional view showing the structural example of the optical semiconductor package according to the present invention.
- FIG. 3 is a back view showing the structural example of the optical semiconductor package according to the present invention.
- FIG. 4 is a sectional perspective view for explaining the configuration of a cavity in the optical semiconductor package of the present invention.
- FIG. 5A shows the configuration of an optical semiconductor device according to the present invention
- FIG. 5B shows the configuration of the optical semiconductor device according to the present invention
- FIG. 6 is an explanatory drawing showing reductions in the reflectivity of a cavity material used for the optical semiconductor package
- FIG. 7 is a top view showing the external structure of an optical semiconductor package according to the related art.
- FIG. 8 is a sectional view showing the structure of the optical semiconductor package according to the related art.
- FIG. 1 is a top view showing a structural example of an optical semiconductor package according to the present invention.
- FIG. 2 is a sectional view showing the structural example of the optical semiconductor package according to the present invention, taken along line A-A′ of FIG. 1 .
- FIG. 3 is a back view showing the structural example of the optical semiconductor package according to the present invention.
- FIG. 4 is a sectional perspective view for explaining the configuration of a cavity in the optical semiconductor package of the present invention.
- FIGS. 5A and 5B show the configuration of an optical semiconductor device according to the present invention.
- FIG. 5A is a top view
- FIG. 5B is a sectional view taken along line A-A′ of FIG. 5A .
- an optical semiconductor package 6 (hereinafter, will be simply called a package 6 ) is made up of a base 1 , a metal block 2 , and leads 3 .
- the base 1 is made up of a ring 1 a having a step on the back side and a sealing material 1 b joining the metal block 2 and the leads 3 .
- the ring 1 a and the sealing material 1 b are both made of an insulating material.
- the stepped ring 1 a forms a clearance to be filled with the sealing material 1 b , without exposing the sealing material 1 b on the inner surface of the cavity.
- the ring 1 a is a ceramic ring or a glass-ceramic ring that is highly reflective and is not discolored by light or heat.
- the sealing material 1 b is composed of a glass or a thermosetting resin that is highly resistant to heat.
- a glass-ceramic used for the ring 1 a contains alumina. When the content of alumina is not larger than 50 mass %, the reflectivity decreases. When the content of alumina is not smaller than 60 mass %, the mechanical strength decreases. Thus the glass-ceramic used for the ring 1 a preferably has an alumina content of 50 mass % to 60 mass %.
- the material of the ring 1 a is not limited to glass-ceramics containing alumina.
- the ring 1 a constitutes only the side of the cavity and thus the ring 1 a is not so affected by light and heat as the bottom of the cavity. For this reason, the ring 1 a may be made of any materials as long as discoloration and deterioration can be suppressed under the influence of light and heat.
- the metal block 2 includes an element mounting part 2 a for mounting an optical semiconductor element, a heat dissipating pad 2 b, and a step 2 c forming a lower surface than the element mounting part 2 a .
- the metal block 2 placed in the ring 1 a is made of a metal such as an oxygen free copper that is highly thermally conductive.
- the leads 3 are each subjected to bending press to be formed into predetermined shapes and are placed next to the ring 1 a .
- the inner portions of the leads 3 are placed on the lower surface formed by the step 2 c of the metal block 2 .
- the step 2 c is formed such that the leads 3 are not higher than the element mounting part 2 a . Thus it is possible to prevent the leads 3 from blocking light from the optical semiconductor element.
- the metal block 2 and the leads 3 are provided in the clearance formed by the step of the ring 1 a , and the clearance of the ring 1 a is filled with the sealing material 1 b to hold the metal block 2 and the leads 3 in the clearance.
- the leads 3 are made of a metallic material and are connected via metal wires to the optical semiconductor element, e.g., an LED element mounted on the element mounting part 2 a of the metal block 2 . Further, the leads 3 are connected to an external circuit.
- the sealing material 1 b fixes the metal block 2 and the leads 3 while electrically insulating the metal block 2 and the leads 3 .
- the sealing material 1 b is a thermosetting resin or a glass material and the ring 1 a is made of a glass-ceramic material or a ceramic material.
- a cavity 10 has a region including the side of the ring 1 a of the base 1 and the top surface of the metal block 2 , the top surface containing the element mounting part 2 a . Light emitted from the optical semiconductor element mounted in the cavity 10 is reflected in the cavity 10 and then the light is emitted out of the cavity 10 , thereby improving the luminous efficiency of the optical semiconductor device.
- the base 1 is divided by a step 1 c into the ring 1 a that constitutes the cavity 10 and a ring-shaped base bottom 1 d that is larger in internal diameter than the ring 1 a .
- the mounting surface for the optical semiconductor element on the metal block 2 is exposed in the cavity 10 , and the exposed surface is divided by the step 2 c into the element mounting part 2 a and a lead placement part 2 d for placing the leads 3 .
- the lead placement part 2 d is lower than the element mounting part 2 a . In a state in which the metal block 2 is mounted in the base 1 , a clearance is provided between the step 1 c and the lead placement part 2 d and the leads 3 are placed in the clearance.
- a region surrounded by the base bottom 1 d is sealed with the sealing material 1 b , so that the leads 3 and the metal block 2 are held by the sealing material 1 b .
- a region surrounded by the ring 1 a and the metal block 2 serves as the cavity 10 .
- the base bottom 1 d of the base 1 makes it possible to seal the leads 3 in the region surrounded by the base bottom 1 d .
- the sealing material 1 b in the cavity 10 it is not necessary to provide the sealing material 1 b in the cavity 10 , and only the metal block 2 is exposed in the bottom of the cavity 10 .
- the bottom of the cavity 10 is susceptible to light and heat, the bottom is made of the metal that is hardly discolored or degraded by light and heat. Thus it is possible to suppress a reduction in light emission ratio and mechanical strength.
- an optical semiconductor element 4 is mounted on the element mounting part 2 a of the optical semiconductor package according to the present invention, the optical semiconductor element 4 and the leads 3 are electrically connected via metal wires 5 , and the inside of the cavity 10 is molded with a light-transmissive resin (not shown), so that the optical semiconductor device is formed.
- the optical semiconductor device is formed thus by using the optical semiconductor package of the present invention, so that the bottom of the cavity 10 is made of the metal hardly discolored or degraded by light and heat, though the bottom is susceptible to light and heat. Hence, it is possible to suppress a reduction in light emission ratio and mechanical strength and thus achieve an optical semiconductor package and an optical semiconductor device in which an amount of light emission is hardly reduced by a decrease in reflectivity on the inner surface of the cavity and high reliability is obtained.
- FIG. 6 is an explanatory drawing showing reductions in the reflectivity of each cavity material used for the optical semiconductor package.
- FIG. 6 shows measured reflectivities of each cavity material used for an LED package.
- a white resin used in the related art has a reflectivity of 87% in the initial state relative to an outgoing beam having a wavelength of 460 nm.
- the reflectivity is reduced to 84% at 48 hours, 81% at 120 hours, and 60% or less at 1000 hours due to a thermal effect.
- the reflectivity is further reduced by a thermal effect from the optical semiconductor element and resin degradation caused by light.
- the reflectivity is considerably reduced by discoloration.
- an Ag coating applied to the inner leads and the surface of the metal block is also reduced in reflectivity, though the reduction is smaller than that of the white resin.
- the reflectivity is reduced by sulfuration on the surface of the Ag coating.
- the ring 1 a can be composed of an inorganic material by changing the position of the sealing material 1 b , so that unlike on a resin material, serious discoloration or degradation does not occur.
- Typical inorganic materials have higher resistance to discoloration and degradation as compared with a resin material constituting the base of a semiconductor device of the related art.
- an inorganic material having a high light reflectivity and high resistance to discoloration and degradation the reflectivity of light and the mechanical strength can be maintained.
- the inorganic material preferably has a light reflectivity and resistance to discoloration and degradation as high as possible.
- the same effect can be obtained by performing surface treatment of Ag on the metal block 2 constituting the bottom of the cavity 10 .
- surface treatment of, e.g., an Au—Ag alloy having high resistance to discoloration it is possible to further suppress a reduction in reflectivity.
- the reflectivity In the initial state, the reflectivity is 88%, which is lower than that of Ag.
- the reflectivity is only reduced to 86% at 48 hours, 84% at 120 hours, and 80% at 1000 hours by a thermal effect.
- the cavity side is made of a glass-ceramic material which hardly decreases in reflectivity during the test.
- the metal block 2 of the optical semiconductor package may be made of typical copper, a copper alloy such as a Cu—Fe alloy, and a clad metal containing copper or a copper alloy and may be surface-treated with, e.g., an Ag—Au alloy as long as high thermal conductivity and high resistance to degradation are obtained.
- the metal block 2 including the element mounting part 2 a is made of a copper material having a high thermal conductivity and the metal block 2 is protruded to the back side of the package, thereby preventing a temperature increase on the optical semiconductor element 4 and the bottom of the cavity 10 .
- This effect can be enhanced by mounting the optical semiconductor package on a metal substrate made of, e.g., aluminum. Further, the exposed metal block 2 is substantially flush with the back side of the package, thereby favorably facilitating the mounting of the optical semiconductor package on the substrate.
- the overall metal block 2 is composed of a metal.
- the surface of the element mounting part 2 a or the overall top surface containing the lead placement part 2 d may be formed using an inorganic material that has a reflectivity of at least 83% at a light wavelength of 460 nm and has higher resistance to discoloration or degradation caused by light or heat as compared with a thermoplastic resin, and other regions may be made of any materials.
- regions other than the surface of the metal block are made of a metal having a high thermal conductivity or a non-metal material, heat dissipation is favorably obtained at the same time.
- the overall metal block 2 may be made of a non-metal material having a high reflectivity of light and high resistance to discoloration or degradation caused by heat or light.
- connection terminals may be formed on the backside of the package or the leads may be shaped like gull wings.
- any number of leads may be provided.
- Backside terminals may be provided on the optical semiconductor element and the back side of the optical semiconductor element may be electrically connected to the metal block.
- the metal block may act as an external terminal.
- multiple metal blocks 2 are provided so as to be electrically isolated from one another, achieving flexibility in an electric circuit configuration.
- element mounting parts 2 a are electrically insulated from each other, so that the optical semiconductor elements 4 can be also connected in series.
- the optical semiconductor element 4 can be mounted across the two metal blocks 2 .
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010055196A JP5455720B2 (en) | 2010-03-12 | 2010-03-12 | Optical semiconductor package and optical semiconductor device |
JP2010-055196 | 2010-03-12 |
Publications (2)
Publication Number | Publication Date |
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US20110220954A1 US20110220954A1 (en) | 2011-09-15 |
US8101967B2 true US8101967B2 (en) | 2012-01-24 |
Family
ID=44559116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/024,582 Expired - Fee Related US8101967B2 (en) | 2010-03-12 | 2011-02-10 | Optical semiconductor package and optical semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (1) | US8101967B2 (en) |
JP (1) | JP5455720B2 (en) |
CN (1) | CN102194975B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11756947B2 (en) | 2020-02-06 | 2023-09-12 | Lumileds Llc | Light-emitting diode lighting system with wirebonded hybridized device |
US12051685B2 (en) | 2020-07-21 | 2024-07-30 | Lumileds, LLC | Light-emitting device with metal inlay and bottom contacts |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5747737B2 (en) * | 2011-08-26 | 2015-07-15 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
TWI443877B (en) * | 2011-12-15 | 2014-07-01 | Genesis Photonics Inc | Reflective element and light emitting diode package apparatus |
CN102832324A (en) * | 2012-09-04 | 2012-12-19 | 江苏尚明光电有限公司 | High-power LED (light emitting diode) packaging structure |
TWI568031B (en) * | 2015-06-29 | 2017-01-21 | 光寶光電(常州)有限公司 | Led package structure and chip carrier |
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KR100703218B1 (en) * | 2006-03-14 | 2007-04-09 | 삼성전기주식회사 | Light emitting diode package |
JP2008186947A (en) * | 2007-01-29 | 2008-08-14 | Matsushita Electric Ind Co Ltd | Package for optical semiconductor device, optical semiconductor device, and their manufacturing method |
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2010
- 2010-03-12 JP JP2010055196A patent/JP5455720B2/en not_active Expired - Fee Related
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2011
- 2011-01-24 CN CN201110033237.6A patent/CN102194975B/en not_active Expired - Fee Related
- 2011-02-10 US US13/024,582 patent/US8101967B2/en not_active Expired - Fee Related
Patent Citations (6)
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US7129638B2 (en) * | 2000-08-09 | 2006-10-31 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Light emitting devices with a phosphor coating having evenly dispersed phosphor particles and constant thickness |
US7737463B2 (en) * | 2004-09-10 | 2010-06-15 | Seoul Semiconductor Co., Ltd. | Light emitting diode package with a heat sink support ring and having multiple molding resins, wherein secondary molding resin with higher hardness than primary molding resin and which covers primary molding resin that covers LED die |
US7081645B2 (en) * | 2004-10-08 | 2006-07-25 | Bright Led Electronics Corp. | SMD(surface mount device)-type light emitting diode with high heat dissipation efficiency and high power |
US7361940B2 (en) * | 2004-12-16 | 2008-04-22 | Seoul Semiconductor Co., Ltd. | Leadframe and packaged light emitting diode |
US20080061314A1 (en) * | 2006-09-13 | 2008-03-13 | Tsung-Jen Liaw | Light emitting device with high heat-dissipating capability |
JP2008185763A (en) | 2007-01-30 | 2008-08-14 | Kawai Musical Instr Mfg Co Ltd | Electronic keyboard instrument |
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US11756947B2 (en) | 2020-02-06 | 2023-09-12 | Lumileds Llc | Light-emitting diode lighting system with wirebonded hybridized device |
US12051685B2 (en) | 2020-07-21 | 2024-07-30 | Lumileds, LLC | Light-emitting device with metal inlay and bottom contacts |
US12051686B2 (en) | 2022-05-25 | 2024-07-30 | Lumileds, LLC | Methods of manufacturing light-emitting devices with metal inlays and bottom contacts |
Also Published As
Publication number | Publication date |
---|---|
CN102194975B (en) | 2015-04-22 |
JP2011192682A (en) | 2011-09-29 |
CN102194975A (en) | 2011-09-21 |
US20110220954A1 (en) | 2011-09-15 |
JP5455720B2 (en) | 2014-03-26 |
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