TWI568031B - Led package structure and chip carrier - Google Patents

Description

Light-emitting diode package structure and wafer carrier

The present invention relates to a package structure, and more particularly to a light emitting diode package structure and a wafer carrier.

The conventional high-power LED package structure requires high technical requirements such as wavelength, illumination, and heat dissipation. Most of the high-power LED package structures use High Temperature Co-fired Ceramic (HTCC), and the high-temperature co-firing technology has high technical thresholds and high cost, which hinders high-power illumination. The development of the diode package structure.

Therefore, the present inventors have felt that the above-mentioned deficiencies can be improved, and they have devoted themselves to research and cooperated with the application of the theory, and finally proposed a present invention which is reasonable in design and effective in improving the above-mentioned defects.

The embodiment of the invention provides a light emitting diode package structure and a wafer carrier, which can effectively improve the problems caused by the conventional high power LED package structure.

The embodiment of the invention provides a light emitting diode package structure, comprising: a wafer carrier, comprising: a ceramic substrate having a first plate surface, a second plate surface on the opposite side of the first plate surface, and An outer side surface between the first board surface and the second board surface; wherein the ceramic substrate is formed with a receiving hole penetrating the first board surface and the second board surface; a circuit layer is disposed The first plate surface of the ceramic substrate; a metal block comprising: a body portion disposed in the receiving hole of the ceramic substrate, The body portion protrudes from the first plate surface by approximately 10 micrometers to 30 micrometers; wherein the body portion block protruding from the first panel surface is defined as a protruding block; and an extension portion connected to the An outer edge of the protruding block, and the surface of the extending portion and the surface of the protruding block are substantially coplanar and collectively defined as a solid crystal surface; and a ceramic reflecting plate having a first surface opposite to the first surface a second surface of the side, and a side surface between the first surface and the second surface; wherein the ceramic reflector is disposed on the ceramic substrate and covers a portion of the circuit layer, and the ceramic reflector Forming a uniform hole penetrating the first surface and the second surface, the solid crystal surface of the metal block is exposed outside the ceramic reflector through the through hole; and a light emitting diode chip disposed on the The solid crystal plane of the wafer carrier, and the light emitting diode chip is electrically connected to the circuit layer.

The embodiment of the present invention further provides a wafer carrier, comprising: a ceramic substrate having a second plate surface on a first plate surface opposite to the first plate surface, and the first plate surface and the first plate surface An outer side surface between the second board faces; wherein the ceramic substrate is formed with a receiving hole penetrating the first board surface and the second board surface; a circuit layer disposed on the first surface of the ceramic substrate a metal plate, comprising: a body portion disposed on the receiving hole of the ceramic substrate, the body portion protruding from the first plate surface by about 10 micrometers to 30 micrometers; wherein the protruding portion The body portion of a board surface is defined as a protruding block; and an extension portion is coupled to the outer edge of the protruding block, and the surface of the extending portion is substantially coplanar with the surface of the protruding block and is defined as a solid crystal surface; and a ceramic reflector having a first surface, a second surface on an opposite side of the first surface, and a side surface between the first surface and the second surface; The ceramic reflector is disposed on the ceramic substrate and covers a portion of the line a road layer, and the ceramic reflector is formed with a continuous hole penetrating the first surface and the second surface, the solid crystal surface of the metal block being exposed outside the ceramic reflector through the through hole.

In summary, the LED package structure and the wafer carrier provided by the embodiments of the present invention protrude through the body portion of the metal block to accommodate the surface. The solid surface of the shape is produced. Furthermore, the arrangement of the metal block through the extension portion can effectively increase the solid crystal area of the metal block, and is suitable for a larger size of the LED chip.

The detailed description of the present invention and the accompanying drawings are to be understood by the claims The scope is subject to any restrictions.

1000‧‧‧Light emitting diode package structure

100‧‧‧ wafer carrier

1‧‧‧ceramic substrate

11‧‧‧ first board

12‧‧‧ second board

13‧‧‧Outside

131‧‧‧ corner

14‧‧‧ accommodating holes

15‧‧‧Perforation

2‧‧‧conductive column

3‧‧‧Line layer

32‧‧‧First line

321‧‧‧Long side

3211‧‧‧End parts

3212‧‧‧ gap

3213‧‧‧First line area

322‧‧‧Short side

3221‧‧‧Zina diode solid crystal region

323‧‧‧ corner parts

33‧‧‧second line

331‧‧‧ long side

3311‧‧‧ end parts

3312‧‧ ‧ gap

3313‧‧‧Second line area

332‧‧‧ Short side

3321‧‧‧Zina diode wiring area

333‧‧‧ corner parts

4‧‧‧Extended lines

5‧‧‧metal block

51‧‧‧ Body Department

511‧‧‧ protruding block

52‧‧‧Extension

521‧‧‧First Extension

522‧‧‧Second extension

53‧‧‧Solid surface

6‧‧‧pad layer

61‧‧‧electrode pads

611‧‧‧ end parts

62‧‧‧ Thermal pad

621‧‧‧ incision

63‧‧‧Isolation pad

7‧‧‧Ceramic reflector

71‧‧‧ first surface

711‧‧‧ plastic tank

72‧‧‧ second surface

73‧‧‧ side surface

731‧‧‧Necked corner

74‧‧‧through holes

8, 8' ‧ ‧ polar identification pads (eg glass mat)

9‧‧‧Ceramic sandwich

91‧‧‧Perforation

10‧‧‧ring stop layer

80‧‧‧Adhesive colloid

200‧‧‧Light Diode Wafer

300‧‧‧Zina diode chip

400‧‧‧Package colloid

500‧‧‧ cover

600‧‧‧ spacers

700‧‧‧Reflective film

H‧‧‧ Height

G‧‧‧ gap

1 is a perspective view of a first embodiment of a light emitting diode package structure according to the present invention.

2 is a perspective view of another perspective of FIG. 1.

Figure 3 is a partial exploded view of Figure 1.

4 is an exploded perspective view of the wafer carrier, the light emitting diode wafer, and the Zener diode wafer of FIG. 3.

Figure 5 is a top plan view of the wafer carrier of Figure 4.

Figure 6 is a partially exploded perspective view of the wafer carrier of Figure 4;

FIG. 7 is an exploded perspective view showing the wafer carrier of FIG. 6 not including a ceramic reflector and a polarity identification pad.

FIG. 8 is an exploded perspective view of another perspective of FIG. 7. FIG.

Figure 9 is a cross-sectional view taken along line X1-X1 of Figure 1.

Figure 10 is a partially enlarged schematic view of Figure 9.

FIG. 11 is a perspective view showing the light-emitting diode package structure of FIG. 1 with a ring-shaped stop layer.

FIG. 12 is a perspective view of a second embodiment of a light emitting diode package structure according to the present invention.

Figure 13 is a partially exploded perspective view of Figure 12 .

Figure 14 is a cross-sectional view taken along line Y-Y of Figure 12;

Figure 15 is a partially enlarged schematic view of Figure 14.

FIG. 16A is a schematic view showing a variation of the second embodiment of the LED package structure of the present invention.

Figure 16B is a cross-sectional view (I) of Figure 16A taken along the line Z-Z.

Figure 16C is a cross-sectional view (II) of Figure 16A taken along the line Z-Z.

FIG. 17 is a schematic view showing still another variation of the second embodiment of the LED package structure of the present invention.

FIG. 18 is a perspective view of a third embodiment of a light emitting diode package structure according to the present invention.

Figure 19 is a perspective view of another perspective of Figure 18.

Figure 20 is a partially exploded perspective view of the wafer carrier of Figure 18.

Figure 21 is a cross-sectional view taken along line X2-X2 of Figure 18.

FIG. 22 is a perspective view of a fourth embodiment of a light emitting diode package structure according to the present invention.

Figure 23 is a partially exploded perspective view of Figure 22.

Figure 24 is a cross-sectional view taken along line X3-X3 of Figure 22.

[First Embodiment]

Please refer to FIG. 1 to FIG. 11 , which are the first embodiment of the present invention. It should be noted that the related quantities and appearances mentioned in the embodiment are only used to specifically describe the implementation of the present invention. The manner in which the content is understood is not to be construed as limiting the scope of the invention.

As shown in FIG. 1 and FIG. 2, the present embodiment is a light emitting diode package structure 1000, especially a high power light emitting diode package structure (such as an ultraviolet light emitting diode package structure), and is suitable for low temperature. Low Temperature Co-fired Ceramic (LTCC) is used, but the present invention is not limited to the above conditions in practical use.

Referring to FIG. 3 to FIG. 5 , the LED package 1000 includes a wafer carrier 100 , a LED array 200 and a Zener diode 300 disposed in the wafer carrier 100 . The package carrier 100 is sealed with an encapsulant 400 of the LED array 200 and the Zener diode 300. In the present embodiment, the configuration of the wafer carrier 100 will be described first, and then the connection relationship between the wafer carrier 100 and other components will be described.

As shown in FIG. 6 to FIG. 8 , when referring to FIG. 9 and FIG. 10 , the wafer carrier 100 includes a ceramic substrate 1 , two conductive pillars 2 disposed on the ceramic substrate 2 , and a circuit layer 3 . Four extension lines 4, a metal block 5, and a pad layer 6, a ceramic reflector 7 stacked on the ceramic substrate 1, and four polarity identification pads 8, 8' disposed on the ceramic reflector 7.

The ceramic substrate 1 has a first plate surface 11 , a second plate surface 12 on the opposite side of the first plate surface 11 , and an outer side surface 13 between the first plate surface 11 and the second plate surface 12 . The ceramic substrate 1 has a polygonal structure (in the embodiment, a square is taken as an example), and the outer side surface 13 of the ceramic substrate 1 has a 1/4 arc-shaped notch 131 at each corner thereof. Thereby, the ceramic substrate 1 is formed with the notch 131 at the corner to effectively prevent the corner from being cracked.

Further, a central portion of the ceramic substrate 1 is formed with a receiving hole 14 penetrating the first plate surface 11 and the second plate surface 12, and the cross-sectional shape of the receiving hole 14 is substantially edged in this embodiment. A square with a length of 1 mm to 1.2 mm. The ceramic substrate 1 is formed with a through hole 15 penetrating the first plate surface 11 and the second plate surface 12 at opposite sides of the accommodating hole 14 , and the cross-sectional shape of each of the through holes 15 is substantially round in this embodiment. shape.

The two conductive pillars 2 are respectively located in the two through holes 15 of the ceramic substrate 1, and each of the through holes 15 is filled by the corresponding conductive pillars 2. Wherein, one end of each conductive pillar 2 (such as the top end of the conductive pillar 2 in FIG. 9) is coplanar with the first plate surface 11 of the ceramic substrate 1, and the other end of each conductive pillar 2 (such as the conductive pillar 2 in FIG. 9) The bottom end is coplanar with the second plate surface 12 of the ceramic substrate 1.

In the embodiment, the circuit layer 3 is exemplified by a silver circuit layer, and the circuit layer 3 is disposed on the first board surface 11 of the ceramic substrate 1, and the circuit layer 3 has a first line 32 and a second line. 33. The first line 32 and the second line 33 are respectively located at two sides of the first board surface 11 and respectively abut against the two conductive posts 2 .

In more detail, the first line 32 and the second line 33 are both substantially L-shaped and each include a long side portion 321, 331 and a short side portion 322, 332 that are vertically connected. The L-shaped first line 32 and the corner portions 323 and 333 of the second line 33 and the end portions 3211 and 3311 of the long side portions 321 and 331 are respectively disposed adjacent to the notch 131 of the ceramic substrate 1. Further, a part of the end edges of the corner portions 323 and 333 and a part of the end edges of the end portions 3211 and 3311 are each formed in a quarter-arc shape and are respectively aligned with the end edges of the notch 131.

The long side portion 321 of the first line 32 and the long side portion 331 of the second line 33 are respectively located at opposite sides of the first board surface 11 and are parallel to each other, and the long side portion 321 of the first line 32 and the first line 32 The long side portions 331 of the two lines 33 respectively cover the two through holes 15 on the first plate surface 11 of the ceramic substrate 1, so that the two conductive posts 2 abut against the long side portion 321 and the second line 33 of the first line 32, respectively. Long side 331 (see Figure 9). The short side portion 322 of the first line 32 and the short side portion 332 of the second line 33 are located at one side of the first board surface 11 and face each other.

Furthermore, the long side portion 321 of the first line 32 and the long side portion 331 of the second line 33 are adjacent to the inner edges of the short side portions 322, 332, and are recessed to form a semicircular notch 3212, 3312. .

The extension lines 4 are respectively formed on the outer corners 13 of the ceramic substrate 1 and the extension lines 4 are vertically connected to the outer corners of the first line 32 and the second line 33 of the circuit layer 3, respectively. 323, 333 end edge and end portions 3211, 3311 of the long side portions 321, 331 end edge.

In the present embodiment, the metal block 5 is exemplified by a silver block, and the metal block 5 includes a body portion 51 and an extending portion 52. The body portion 51 is disposed in the receiving hole 14 of the ceramic substrate 1 and is accommodated therein. The hole 14 is filled with the body portion 51. The main body portion 51 has a square shape in the present embodiment and a side length of 1 mm to 1.2 mm. However, the shape of the cross section of the main body portion 51 is not limited to the above, and may be rectangular or circular. One end of the body portion 51 (such as the bottom end of the body portion 51 in FIG. 9) is substantially coplanar with the second plate surface 12 of the ceramic substrate 1, and the other end of the body portion 51 (such as the top portion of the body portion 51 in FIG. 9). Projecting the first plate surface 11 of the ceramic substrate 1 by approximately 10 micrometers to 30 micrometers, and the block portion of the body portion 51 protruding from the first panel surface 11 is defined as a protruding block 511 (Figure 10). In other words, the height H of the protruding block 511 protruding from the first plate surface 11 is approximately 10 micrometers to 30 micrometers.

It should be noted that, since the metal block 5 is formed by filling a metal glue (ie, a metal powder mixed colloid such as silver glue) in the receiving hole 14 by screen printing, the amount of the metal powder is substantially equivalent to that of the receiving hole 14. The volume is such that when the metal block formed by sintering fails to protrude from the receiving hole, the top surface of the metal block will be curved due to the cohesive force, thereby affecting the subsequent die bonding operation of the light emitting diode chip. Therefore, the wafer carrier 100 of the present embodiment protrudes through the body portion 51 of the metal block 5 from the receiving hole 14 to avoid the occurrence of the curved surface of the solid crystal surface.

The extending portion 52 is integrally connected to the outer edge of the protruding block 511 (see FIG. 10). Further, the extending portion 52 is a square ring type in the present embodiment and surrounds the protruding block 511 of the body portion 51, and extends. The portion 52 is positioned on the first plate surface 11 of the ceramic substrate 1. The surface of the extending portion 52 and the surface of the protruding block 511 of the body portion 51 are substantially coplanar and are collectively defined as a solid crystal surface 53, and the above-mentioned solid crystal surface 53 is substantially square. In view of the top surface of the ceramic substrate 1 and the metal block 5, the area of the crystal-fixing surface 53 is approximately 5 to 15%, and preferably 8.5%, of the top surface of the ceramic substrate 1 and the metal block 5. Furthermore, the long side portion 321 of the first line 32 and the long side portion 331 of the second line 33 are respectively located on opposite sides of the fixed surface 53, the short side portion 322 and the second line 33 of the first line 32. The short side portion 332 is located on one side of the fixed surface 53.

In more detail, the extending portion 52 includes a first extending portion 521 and a second extending portion 522 disposed on the first extending portion 521 . The first extension portion 521 and the second extension portion 522 each have a square ring shape with a width of 50 to 100 micrometers, and the first extension portion 521 and the second extension portion 522 both surround the circumference of the accommodation hole 14 . That is, the inner edges of the first extending portion 521 and the second extending portion 522 are aligned with each other and are aligned with the end edge of the receiving hole 14. In other words, the first extending portion 521 and the second extending portion 522 are connected around the circumference of the protruding block 511 of the body portion 51 without gaps. Furthermore, the first extension portion 521 is in contact with the long side portion 321 of the first line 32, and the first extension portion 521 and the first line 32 of the circuit layer 3 are shared with the second line 33. The plane is separated while the second line 33 is separated from the extension 52 and the first line 32.

Thereby, the extending portion 52 of the metal block 5 is connected to the first line 32, so that the metal block 5 can be electrically connected to the first line 32, thereby making the solid crystal surface 53 of the metal block 5 suitable for horizontal or A vertical LED array 200 (described in detail below). Furthermore, the arrangement of the metal block 5 through the extension portion 52 can effectively increase the solid crystal area of the metal block 5, and is suitable for the LED diode 200 of a larger size.

The pad layer 6 is disposed on the second plate surface 12 of the ceramic substrate 1, and the pad layer 6 includes a long electrode pad 61 and an elongated thermal pad 62 between the electrode pads 61. The pad 61 and the thermal pad 62 are spaced apart from each other and the longitudinal directions are substantially parallel to each other. The two electrode pads 61 are located substantially directly below the long side portions 321 and 331 of the circuit layer 3, and the end edges of the end portions 611 of the two electrode pads 61 are each 1/4 arc shape and are respectively cut. The extension lines 4 at the corners 131 are respectively connected or separated from the end portions 611 of the two electrode pads 61 of the pad layer 6 respectively.

Therefore, in the case where the extension lines 4 are respectively connected to the end portions 611 of the two electrode pads 61, when the electrode pads 61 are soldered, the solder corresponding to the respective electrode pads 61 tends to be affected by the cohesive force. Bonding with the solderable material causes the solder to climb along the extension line 4, thereby effectively increasing the tin area of the wafer carrier 100.

Furthermore, the two electrode pads 61 respectively cover the two through holes 15 on the second plate surface 12 of the ceramic substrate 1 (as shown in FIG. 9 ), and the two conductive posts 2 respectively abut against the two electrode pads 61 , thereby making the two The electrode pads 61 are electrically connected to the first line 32 and the second line 33 via the two conductive posts 2, respectively.

Further, the thermally conductive pad 62 located at the center is in contact with the body portion 51 of the metal block 5. Further, the length and width of the centrally located thermal pad 62 are both longer than the sides of the square section of the body portion 51, so that the body portion 51 can completely abut the centrally located thermal pad 62. Wherein, the above-mentioned thermal pad abutting on the center of the body portion 51 At the 62 portion, a slit 621 is formed on each of the opposite sides to prevent warpage caused by excessively large area of the continuous soldering of the thermal pad 62.

In addition, a spacer 63, such as a black glass paste, may be further disposed between the electrode pads 61 and the thermal pad 62, so that the electrode pads 61 and the thermal pads 62 are electrically isolated from each other by the glass paste.

Referring to FIGS. 6 and 9, the ceramic reflector 7 has a first surface 71, a second surface 72 on the opposite side of the first surface 71, and a first surface 71 and a second surface 72. Side surface 73. The ceramic reflector 7 has a polygonal structure (in the embodiment, a square is taken as an example), and the side surface 73 of the ceramic reflector 7 has a 1/4 arc-shaped notch 731 at each corner thereof. Thereby, the ceramic reflecting plate 7 is formed with a notch 731 at a corner to effectively prevent the corner from being cracked. Furthermore, a circular through hole 74 penetrating the first surface 71 and the second surface 72 is formed substantially at the center of the ceramic reflector 7, and the diameter of the through hole 74 is larger than the diagonal of the fixed surface 53. Line length. In addition, although the through hole 74 of the present embodiment is circular, the specific shape of the through hole 74 is not limited thereto. For example, the through hole 74 can also be square.

The second surface 72 of the ceramic reflector 7 is disposed on the first plate surface 11 of the ceramic substrate 1 and covers a portion of the wiring layer 3, and the side surface 73 of the ceramic reflector 7 is aligned with the outer surface 13 of the ceramic substrate 1. . Wherein, the portion of the circuit layer 3 not covered by the ceramic reflector 7 includes the partial long side portions 321 and 331 and the partial short side portions 322 and 332 of the first line 32 and the second line 33 adjacent to the loop line 31. .

As shown in FIG. 5, in order to facilitate the description of the embodiment, the partial long side portion 321 of the first line 32 not covered by the ceramic reflecting plate 7 is defined as a first bonding portion 3213, which is not provided by the ceramic reflecting plate 7. A portion of the long side portion 331 of the covered second line 33 is defined as a second line-bonding portion 3313, and a portion of the short side portion 322 of the first line 32 not covered by the ceramic reflector 7 is defined as a Zener diode solid crystal. The region 3221, a portion of the short side portion 332 of the second line 33 not covered by the ceramic reflector 7, is defined as a Zener diode wiring region 3321. The solid crystal surface 53 of the metal block 5 and the first bonding area 3213, a second bonding area 3313, a Zener diode solid crystal region 3221, a Zener diode wiring area 3321, and a gap 3212, 3312 of the first line 32 and the second line 33 are all via the through hole 74. It is exposed outside the ceramic reflector 7.

Therefore, since the light reflectance of the ceramic is greater than the light reflectance of the silver under the premise of the light of the same wavelength, the light reflectance of the ceramic substrate 1 is greater than the reflectance of the silver wiring layer 3, and thus A line 32 and a second line 33 are formed with notches 3212, 3312, so that the first board surface 11 of the ceramic substrate 1 can have more area exposed through the through holes 74 outside the ceramic reflector 7, thereby effectively enhancing the illumination. The light extraction rate of the diode package structure 1000.

Referring to Figures 5 and 6, the polarity identification pads 8, 8' have a thickness of approximately 10 microns to 20 microns, and the polarity identification pads 8, 8' can be a plurality of black glass pads or metal pads. The polarity identification pads 8, 8' are respectively disposed at four corners of the first surface 71 of the ceramic reflector 7, and the inner edges of the corners of the respective polarity identification pads 8, 8' face the through holes of the ceramic reflector 7. 74. Further, the polarity identification pads 8, 8' comprise two different shapes, and the polarity identification pads 8, 8' are substantially L-shaped in the embodiment, wherein the two polarity identification pads 8 The inner edge of the corner is at a right angle and is located above the first line 32, and the inner edges of the corners of the other two polarity-recognizing pads 8' are arc-shaped and located above the second line 33.

Thereby, different polarity identification pads 8, 8' are disposed above the first line 32 and the second line 33 respectively, so that the polarity identification pads 8, 8' can provide the polarity of the LED package structure 1000. For identification purposes.

The above is the configuration of the wafer carrier 100 of the present embodiment. This embodiment will be described below to describe the LED array 200, the Zener diode 300, and the encapsulant 400 relative to the wafer carrier 100. Connection relationship.

Referring to FIG. 3 to FIG. 5, the LED wafer 200 is a horizontal wafer in this embodiment, but the type of the LED wafer 200 is not limited thereto. For example, the LED wafer 200 can also be a vertical wafer. Further, the light emitting diode chip 200 is a horizontal wafer in this embodiment, and its light emitting wavelength It can range from 255 nm to 410 nm, for example, a light-emitting diode wafer with a wavelength between the UVA band (315 nm and 400 nm), a light-emitting diode chip with a wavelength between the UVB band (280 nm and 315 nm), or a wavelength medium. A light-emitting diode wafer in the UVC band (100 nm - 280 nm).

The LED chip 200 is mounted on the die plane 53 of the wafer carrier 100, and the LED chip 200 is electrically connected to the circuit layer 3. Further, when the LED wafer 200 is a horizontal wafer (as shown in FIG. 3), the opposite polarity electrodes on the top surface of the LED array 200 are electrically connected to the first line 32 via wire bonding, respectively. The one-line area 3213 and the second line area 3313 of the second line 33. If the LED chip 200 is a vertical wafer (not shown), the electrode on the bottom surface of the LED substrate 200 is electrically connected to the first line 32 via the metal block 5, and is located in the second light. The electrode on the top surface of the polar body wafer 200 is electrically connected to the second wire bonding region 3313 of the second line 33 via a wire.

In addition, the LED package 1000 may further include a solid crystal colloid (not shown), and the LED wafer 200 is adhered to the die attach surface 53 of the wafer carrier 100 via a solid crystal colloid. Wherein, the solid crystal colloid component in the embodiment is a nano silver paste, the nano silver paste preferably does not contain any epoxy resin, and the solid crystal colloid comprises silver particles substantially 85% to 90% by volume, so as to have better thermal resistance and not easy to yellow. Further, in the nano silver paste, the weight percentage of the silver nanoparticles having a particle diameter of less than 20 nm is 20 to 35%, and the weight percentage of the silver nanoparticles having a particle diameter of 20 to 100 nm is 40 to 50%. The adhesive used in nano silver paste is Isobornyl Cyclohexanol (IBCH), which is 2~7% by weight; the solvent used for nano silver paste is 1-decanol (1-nonanol) , its weight percentage is 5~15%. The chemical formula of the nano silver paste is: nAg-m (AgOOCR-1 (AgOR), R = [CH ₃ (CH ₂ ) x], and l, m, n, x are all positive integers.

The Zener diode 300 is fixed to the short side portion 322 of the first line 32 exposed from the through-hole 74 and exposed outside the ceramic reflector 7, that is, the Zener diode The body wafer 300 is fixed and electrically connected to the Zener diode solid crystal region 3221 of the first line 32. Further, the Zener diode 300 is electrically connected to the Zener diode wiring area 3321 of the second line 33 by wire bonding.

As shown in FIG. 3 and FIG. 9, the encapsulant 400 is a condensed colloidal gel in the present embodiment, and the condensed colloidal gel refers to a Si-bond having a bond energy of approximately 452 kj/mol. The O bond is formed, and the encapsulant 400 is located in the through hole 74 of the ceramic reflector 7. Further, the through hole 74 of the ceramic reflector 7 is covered with the encapsulant 400, and the LED array 200 and the Zener diode 300 are embedded in the encapsulant 400. The top surface of the encapsulant 400 is substantially coplanar with the first surface 71 of the ceramic reflector 7.

In addition, the wafer carrier 100 of the present embodiment may further be provided with a ring-shaped stopper layer 10 (as shown in FIG. 11). The material of the ring-shaped barrier layer 10 is a transparent glass glue in this embodiment. The annular stop layer 10 is disposed on the first surface 71 of the ceramic reflector 7, and the annular stop layer 10 surrounds the through hole 74 of the ceramic reflector 7 to limit the outward extension of the encapsulant 400 during the infusion operation. .

[Second embodiment]

Referring to FIG. 12 to FIG. 17 , which is a second embodiment of the present invention, the present embodiment is similar to the first embodiment, and the two are not described again, and the difference between the two is mainly in the following embodiment. The LED package 1000 further includes a cover 500 and does not include the encapsulant 400 in the first embodiment. The specific differences between the present embodiment and the first embodiment are as follows: as shown in FIG. 12 and FIG. 13 , the cover plate 500 is adhered to the ceramic of the wafer carrier 100 via the glass pads 8 , 8 ′. On the reflecting plate 7, and between the cover plate 500 and the first surface 71 of the ceramic reflecting plate 7, through the arrangement of the glass pads 8, 8', a plurality of gaps G (such as FIG. 14 and FIG. 15) are formed, thereby carrying the wafer. The gas in the through hole 74 of the seat 100 can flow through the gap G to the outside air.

The cover plate 500 can be an optical-grade lens. In the embodiment, the flat plate is taken as an example, but the configuration of the cover plate 500 is not limited thereto. For example, the The cover plate 500 may also be formed with a plating layer (not shown) on the surface thereof to enhance the light transmittance; or the cover plate 500 may also form a hemispherical structure (not shown) to adjust the light travel path. For example, when the LED array 200 of the UVA band is used, the LED package 1000 can adopt a flat cover 500. The cover 500 is made of glass or quartz. When the LED assembly 200 of the UVA or UVC band is used, the LED package 1000 can adopt a flat cover 500. The cover 500 is made of glass or quartz and is added on both sides of the cover 500. Plating. When the LED package 200 of the UVC band is used, the cover plate 500 may adopt a semi-spherical lens, the material of the lens is glass or quartz, and the surface of the lens may be coated or not.

In addition, the LED package structure 1000 of the present embodiment may have other variations; as shown in FIG. 16A to FIG. 16C, the adhesive pad 80 (eg, UV colloid) is substituted for the glass pad 8, 8'. . The first surface 71 of the ceramic reflector 7 is recessed with a plurality of glue grooves 711, and the adhesive body 80 is filled in the glue grooves 711 and at least partially protrudes from the glue groove. The light emitting diode package structure 1000 further includes a plurality of spacers 600 sandwiched between the first surface 71 of the ceramic reflector 7 and the cover plate 500, and any spacer 600 is located in two phases. Between adjacent glue grooves 711. Thereby, the spacer G is disposed through the spacer 600 so that the gap G between the ceramic reflecting plate 7 and the cap plate 500 can be controlled within a desired range. The glue groove 711 can form a single-layer groove as shown in FIG. 16B or a double-layer groove as shown in FIG. 16C (ie, the groove has a stepped structure), and the shape of the glue groove 711 is not limited herein.

Alternatively, the LED package structure 1000 of the present embodiment may also be changed to the aspect shown in FIG. Specifically, when the LED package 200 in the LED package 1000 is an ultraviolet LED chip, the LED package 1000 preferably includes a reflective film 700, and the The reflective film 700 is formed in a square ring shape and disposed on the cover plate 500 corresponding to the positions of the adhesive bodies 80 (ie, corresponding to the positions of the plurality of glue grooves 711), and the reflective film 700 may be disposed by coating. On the cover plate 500. Thereby, the ultraviolet light emitting diode chip emits When the ultraviolet light is conductively moved in the cover 500, the reflective film 700 can effectively shield the adhesive colloid 80 to prevent the ultraviolet light from being irradiated onto the adhesive colloid 80, thereby causing deterioration of the adhesive colloid 80.

[Third embodiment]

Referring to FIG. 18 to FIG. 21, which is a third embodiment of the present invention, the present embodiment is similar to the first embodiment, and the two are not described again, and the difference between the two is mainly in the following embodiment. The wafer carrier 100 of the light emitting diode package structure 1000 further has a ceramic interlayer 9, and the pad layer 6 of the present embodiment has a different configuration than the pad layer 6 of the first embodiment. The specific differences between the embodiment and the first embodiment are as follows: The ceramic interlayer 9 has a thickness of about 50 micrometers to 100 micrometers, and the ceramic interlayer 9 is located between the second plate surface 12 of the ceramic substrate 1 and the pad layer 6. A plurality of through holes 91 are formed in each of the ceramic interlayers 9 corresponding to the respective through holes 15 of the ceramic substrate 1. The two conductive posts 2 located in the through holes 15 of the ceramic substrate 1 respectively extend through the two through holes 91 of the ceramic interlayer 9. The body portion 51 of the metal block 5 is connected to the ceramic interlayer 9.

The pad layer 6 is disposed on the ceramic interlayer 9, and the pad layer 6 includes an elongated two-electrode pad 61 which is disposed at intervals from each other and whose longitudinal directions are substantially parallel to each other. The two electrode pads 61 are located substantially below the long side portions 321 and 331 of the circuit layer 3 (as shown in FIG. 21 ), and the end edges of the end portions 611 of the two electrode pads 61 are each a quarter arc. The extension lines 4 at the notch angles 131 are respectively connected or separated from the end portions 611 of the two electrode pads 61 of the pad layer 6 respectively.

Therefore, in the case where the extension lines 4 are respectively connected to the end portions 611 of the two electrode pads 61, when the electrode pads 61 are soldered, the solder corresponding to the respective electrode pads 61 tends to be affected by the cohesive force. Bonding with the solderable material causes the solder to climb along the extension line 4, thereby effectively increasing the tin area of the wafer carrier 100.

In addition, the two electrode pads 61 respectively cover the two through holes 91 on the ceramic interlayer 9, and the two conductive posts 2 respectively abut against the two electrode pads 61, so that the two electrode pads 61 respectively pass through the two conductive columns 2 is electrically connected to the first line 32 and the second line 33.

[Fourth embodiment]

Referring to FIG. 22 to FIG. 24, which is a fourth embodiment of the present invention, the present embodiment is similar to the second embodiment, and the two are not described again, and the difference between the two is mainly in the following embodiment. The wafer carrier 100 of the light emitting diode package 1000 further has a ceramic interlayer 9, and the pad layer 6 of the present embodiment has a different configuration than the pad layer 6 of the second embodiment. Further, the ceramic interlayer 9 and the pad layer 6 of the present embodiment are substantially the same as the ceramic interlayer 9 and the pad layer 6 in the third embodiment, and will not be described herein.

[Possible effects of the embodiments of the present invention]

In summary, the LED package structure provided by the embodiment of the present invention can have the following effects: the wafer carrier protrudes from the body portion of the metal block to the receiving hole, thereby avoiding the curved solid surface. produce. Furthermore, the arrangement of the metal block through the extension portion can effectively increase the solid crystal area of the metal block, and is suitable for a larger size of the LED chip. In addition, in this embodiment, the extension portion of the metal block is electrically connected to the first line, so that the solid crystal surface of the metal block can be applied to the horizontal or vertical light-emitting diode wafer.

In the aspect in which the extension lines are respectively connected to the end portions of the two electrode pads, when the electrode pads are soldered, the solder corresponding to the respective electrode pads tends to bond with the solderable materials due to the cohesive force. The junction is such that the solder climbs along the extended line, thereby effectively increasing the tin area of the wafer carrier.

The ceramic substrate and the ceramic reflector are formed with a corner at the corner, thereby effectively preventing the corner from being cracked. Furthermore, the light reflectance of the ceramic substrate is greater than the light reflectance of the wiring layer, and thus is transmitted through the first line and the second line shape. The gap is formed so that more area of the first surface of the ceramic substrate can be exposed outside the ceramic reflector through the through hole, thereby effectively improving the light extraction rate of the LED package structure.

The polarity identification pads of different shapes are disposed above the first line and the second line respectively, so that the polarity identification pad can provide polarity identification of the LED package structure. Furthermore, the cover plate can be adhered to the ceramic reflector on the wafer carrier via the adhesive, and the gap between the cover and the first surface of the ceramic reflector is formed through the adhesive layer to form a plurality of gaps. The gas in the through hole of the carrier can be circulated to the outside air via the gap. Further, the present invention can provide a spacer between the cover plate and the first surface of the ceramic reflector so that the gap between the ceramic reflector and the cover can be controlled within a desired range.

When the light emitting diode chip in the light emitting diode package structure is an ultraviolet light emitting diode chip, when the ultraviolet light emitted by the ultraviolet light emitting diode chip is conductively moved in the cover plate, between the cover plate and the ceramic reflecting plate The adhesive film is shielded by a reflective film to prevent ultraviolet light from being irradiated onto the adhesive colloid, thereby causing deterioration of the adhesive colloid.

The first surface of the ceramic reflector is provided with a ring-shaped stop layer surrounding the through hole of the ceramic reflector, thereby limiting the outward extension of the encapsulant in the filling operation.

The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the invention, and the equivalent variations and modifications of the scope of the invention are intended to be within the scope of the invention.

1‧‧‧ceramic substrate

11‧‧‧ first board

14‧‧‧ accommodating holes

3‧‧‧Line layer

32‧‧‧First line

321‧‧‧Long side

5‧‧‧metal block

51‧‧‧ Body Department

511‧‧‧ protruding block

52‧‧‧Extension

521‧‧‧First Extension

522‧‧‧Second extension

53‧‧‧Solid surface

200‧‧‧Light Diode Wafer

400‧‧‧Package colloid

H‧‧‧ Height

Claims (12)

A light emitting diode package structure comprising: a wafer carrier, comprising: a ceramic substrate having a first plate surface, a second plate surface on the opposite side of the first plate surface, and the first plate An outer side surface between the surface and the second plate surface; wherein the ceramic substrate is formed with a receiving hole penetrating the first plate surface and the second plate surface; a circuit layer disposed on the ceramic substrate The first plate surface; a metal block, comprising: a body portion disposed on the receiving hole of the ceramic substrate, the body portion protruding from the first plate surface by about 10 micrometers to 30 micrometers; wherein, the convex portion The body portion extending from the first plate surface is defined as a protruding block; and an extending portion is coupled to the outer edge of the protruding block, and the surface of the extending portion and the surface of the protruding block are substantially Plane and collectively defined as a solid crystal surface; wherein the extension portion includes a first extension portion and a second extension portion disposed on the first extension portion, the first extension portion and the second extension portion are looped And the convex block surrounding the body portion; and a ceramic reflector having a first a surface, a second surface on the opposite side of the first surface, and a side surface between the first surface and the second surface; wherein the ceramic reflector is disposed on the ceramic substrate and covers a portion a circuit layer, and the ceramic reflector is formed with a continuous hole penetrating the first surface and the second surface, the solid crystal surface of the metal block is exposed outside the ceramic reflector through the through hole; and a light is emitted The diode chip is disposed on the solid crystal surface of the wafer carrier, and the LED chip is electrically connected to the circuit layer. The light emitting diode package structure of claim 1, wherein the circuit layer has a first line and a second line, the first line is in contact with the first extension, and the first line is The first extension is coplanar and the second line is separated from the An extension and the first line. The light emitting diode package structure of claim 2, wherein the first line and the second line are both substantially L-shaped and each comprises a long side portion and a short side portion vertically connected, the first The long side portion of the line and the long side portion of the second line are respectively located on opposite sides of the fixed crystal plane and are parallel to each other, and the short side portion of the first line is located at the short side portion of the second line The solid crystal faces are on one side and face each other. The LED package structure of claim 3, wherein the long side portion of the first line and the long side portion of the second line are adjacent to an inner edge of the short side portion thereof, and are recessed There is a gap. The light emitting diode package structure of claim 3, further comprising a Zener diode wafer fixed to the first surface of the Zener diode wafer exposed from the through hole The short side of the line. The light emitting diode package structure of claim 1, wherein the ceramic substrate and the ceramic reflector are both substantially polygonal in shape, the outer side of the ceramic substrate being aligned with the side surface of the ceramic reflector, and The outer side surface of the ceramic substrate and the side surface of the ceramic reflector are formed with arc-shaped corners at respective corners thereof, and the wafer carrier has a plurality of extension lines, and the extension lines are respectively formed on the ceramic substrate The corners of the outer side surface, and the extension lines are connected to the circuit layer; the wafer carrier has a pad layer, and the pad layer is disposed on the second board surface of the ceramic substrate, and the The extension lines are connected or separated from the pad layer. The light emitting diode package structure of claim 1, wherein the wafer carrier has a pad layer, and the pad layer is disposed on the second plate surface of the ceramic substrate, and the body of the metal block The portion is connected to the pad layer. The light emitting diode package structure of claim 1, wherein the wafer carrier has a plurality of polarity identification pads, and the polarity identification pads comprise two different shapes, and the polarity identification pads are spaced apart And disposed on the first surface of the ceramic reflector. A light emitting diode package structure comprising: a wafer carrier, comprising: a ceramic substrate having a first plate surface, a second plate surface on the opposite side of the first plate surface, and the first plate An outer side surface between the surface and the second plate surface; wherein the ceramic substrate is formed with a receiving hole penetrating the first plate surface and the second plate surface; a circuit layer disposed on the ceramic substrate The first plate surface; a metal block, comprising: a body portion disposed on the receiving hole of the ceramic substrate, the body portion protruding from the first plate surface by about 10 micrometers to 30 micrometers; wherein, the convex portion The body portion extending from the first plate surface is defined as a protruding block; and an extending portion is coupled to the outer edge of the protruding block, and the surface of the extending portion and the surface of the protruding block are substantially Plane and collectively defined as a solid crystal surface; and a ceramic reflector having a first surface, a second surface on the opposite side of the first surface, and between the first surface and the second surface a side surface; wherein the ceramic reflector is disposed on the ceramic substrate and covered Covering the circuit layer of the portion, and the ceramic reflector is formed with a continuous hole penetrating the first surface and the second surface, the solid crystal surface of the metal block being exposed outside the ceramic reflector through the through hole; a light-emitting diode chip disposed on the solid crystal surface of the wafer carrier, and the light-emitting diode chip is electrically connected to the circuit layer; and a cover plate and a plurality of adhesive bodies, the cover plate via Adhesively adhered to the first surface of the ceramic reflector, the first surface of the ceramic reflector is recessed with a plurality of glue grooves, and the adhesive gels are filled in the glue grooves and have at least The protrusions protrude from the glue grooves. The light emitting diode package structure of claim 9, further comprising a plurality of spacers, the spacers being sandwiched on the first surface of the ceramic reflector and the Between the cover plates, and any spacer is located substantially between the two adjacent glue grooves. The light emitting diode package structure of claim 9, further comprising a solid crystal colloid, the light emitting diode chip being adhered to the solid crystal surface of the wafer carrier via the solid crystal colloid, and The solid crystal colloid is a nano silver paste, and the nano silver paste does not contain any epoxy resin. A wafer carrier includes: a ceramic substrate having a second plate surface on a first plate surface opposite to the first plate surface, and between the first plate surface and the second plate surface An outer side surface; wherein the ceramic substrate is formed with a receiving hole penetrating the first plate surface and the second plate surface; a circuit layer disposed on the first plate surface of the ceramic substrate; a metal block The body includes: a body portion disposed on the receiving hole of the ceramic substrate, the body portion protruding from the first plate surface by about 10 micrometers to 30 micrometers; wherein the body protruding from the first panel surface The block is defined as a protrusion; and an extension is connected to the outer edge of the protrusion, and the surface of the extension is substantially coplanar with the surface of the protrusion and is defined as a solid surface; The extension portion includes a first extension portion and a second extension portion disposed on the first extension portion, the first extension portion and the second extension portion are annular and surround the protruding portion of the body portion And a ceramic reflector having a first surface on the opposite side of the first surface a second surface, and a side surface between the first surface and the second surface; wherein the ceramic reflective plate is disposed on the ceramic substrate and covers a portion of the circuit layer, and the ceramic reflective plate is formed with Through the through hole of the first surface and the second surface, the solid crystal surface of the metal block is exposed outside the ceramic reflector through the through hole.