US7745853B2 - Multi-layer structure with a transparent gate - Google Patents
Multi-layer structure with a transparent gate Download PDFInfo
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- US7745853B2 US7745853B2 US12/141,133 US14113308A US7745853B2 US 7745853 B2 US7745853 B2 US 7745853B2 US 14113308 A US14113308 A US 14113308A US 7745853 B2 US7745853 B2 US 7745853B2
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- transparent gate
- hemt
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- 125000006850 spacer group Chemical group 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 11
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010931 gold Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
Definitions
- the present invention relates to high electron mobility transistors (HEMT) and more particularly to transparent-gate HEMT employing indium tin oxide which can make HEMT more sensitive to the light wave.
- HEMT high electron mobility transistors
- transparent-gate HEMT employing indium tin oxide which can make HEMT more sensitive to the light wave.
- HEMT high electron mobility transistor
- HBT heterojunction bipolar transistor
- PHEMT pseudomorphic HEMT
- LMHEMT lattice match HEMT
- InGaAs in the InP substrate has higher electron mobility and higher peak electron velocity
- LMHEMT shows better high frequency performance than PHEMT.
- MMIC monolithic microwave integrated circuit
- the buffer layer is made of AlInAs, with the indium concentration graded so that it can match the lattice constant of both the GaAs substrate and the GaInAs channel. This brings the advantage that practically any Indium concentration in the channel can be realized, so the devices can be optimized for different applications (low indium concentration provides low noise; high indium concentration gives high gain).
- the MHEMT device can have high frequency performance close to InP LMHEMT. The MHEMT device can save fabrication cost and make fabrication process easier.
- the HEMT is also called a heterostructure field effect transistor (HFET).
- the HEMT is a field effect transistor (FET) incorporating a junction (i.e. a heterojunction) between two materials with different band gaps as the channel instead of a doped region.
- FET field effect transistor
- the heterojunction created by different band-gap materials forms a quantum well in the conduction band on the GaAs side where the electrons can move quickly without colliding with any impurities because the GaAs layer is undoped, and from which they cannot escape.
- the effect of this is to create a very thin layer of highly mobile conducting electrons with very high concentration, giving the channel high electron mobility. This layer is called a two-dimensional electron gas.
- the flowchart comprises an optical signal 1 , a photodiode 2 , a mixer 3 , a local oscillation signal 4 , a band pass filter 5 , an amplifier transmission link 6 , and a radio frequency signal 7 .
- HEMT is a useful device to combine fiber system and radio communication system. When the HEMT is illuminated by light, the channel layer can absorb the optical signal. There are two types of the photoresponse. One type is referred to photovoltaic effect, whereas the other type is referred to photoconduction effect.
- the modulating optical signal illuminates into the device, the device can mix the local oscillation signal 4 and the modulating optical signal. Meanwhile, we can integrate the detector and mixer into one device to simplify the whole design. Then, we can also integrate far end microwave transmission system into a chip to lower the cost of the optical-microwave network, and indirectly make fiber to the home (FTTH) and fiber to the building (FTTB) become possible.
- the conventional gate metal is Ti/Au (20 nm/190 nm).
- the conventional gate metal is illuminated by ⁇ 9 dBm to 0 dBm, 1.55 ⁇ m single mode laser.
- the bias point, Vd equals to 0.45V at the most sensitive position to the light wave.
- the conventional gate metal exists high difficulty in mixing technology and has poor mixing efficiency and high cost. Thus, the need for improvement still exists.
- the second object of the invention is to provide a multi-layer structure with a transparent gate is a transparent-gate HEMT using indium tin oxide which can make HEMT being more sensitive to the light wave.
- the third object of the invention is to provide a multi-layer structure with a transparent gate which can lower the mixing difficulties. When it is used as a mixer or optical detector, it can increase the mixing efficiency and decrease the network cost.
- FIG. 1 is a partial sectional view showing a multi-layer structure in accordance with the present invention
- FIG. 2 is a sectional view showing the multi-layer structure with a transparent gate of the invention
- FIG. 3 is a diagram of optical characteristics of the transparent gate in accordance with the present invention.
- FIG. 4 is a diagram of Current-voltage (I-V) characteristics of the transparent gate of the invention.
- FIG. 5 is a diagram of Gm and Id characteristics of the transparent gate of the invention.
- FIG. 6 is a diagram of Schottky characteristics of the transparent gate of the invention.
- FIG. 7 is a block diagram of conventional optoelectronic microwave mixer.
- FIG. 8 is a diagram of optical characteristics of conventional gate metal.
- the invention provides a multi-layer structure with a transparent gate comprising: a MHEMT device structure comprising a GaAs substrate 10 , a Schottky layer 90 and a cap layer 100 formed on the Schottky layer 90 ; a transparent gate 110 formed on the Schottky layer 90 is an indium tin oxide, ITO; and a drain 120 and a source 130 formed on the cap layer 100 .
- the MHEMT device structure comprises a graded buffer layer 20 , a buffer layer 30 , a first spacer layer 50 , a channel layer 60 and a second spacer layer 70 formed between the GaAs substrate 10 and the Schottky layer 90 in a stacked fashion.
- the MHEMT device structure comprises a first planar doping layer 40 formed between the buffer layer 30 and the first spacer layer 50 .
- the MHEMT device structure comprises a second planar doping layer 80 formed between the second spacer layer 70 and the Schottky layer 90 .
- the channel layer 60 is of InGaAs.
- the graded buffer layer 20 and the buffer layer 30 are of In x Al 1-x As and x is in the range between 0.01 and 0.5.
- the cap layer 100 is of InGaAs.
- the drain 120 and the source 130 are selected from titanium, gold, nickel, palladium, or platinum.
- the drain 120 and the source 130 are selected from a mixture consisting of at least two of titanium, gold, nickel, palladium, and platinum.
- the invention utilizes the chemical beam epitaxy growth technique on the GaAs substrate 10 .
- the invention uses the transparent indium tin oxide (ITO) to take the place of conventional gate metal (Ti/Au).
- the graded buffer layer 20 is a In x Al 1-x As buffer layer, where x is the mole fraction of In content in the graded buffer layer 20 , and x is in the range between 0.01 and 0.5.
- the buffer layer 30 is formed on the graded buffer layer 20 .
- the first planar doping layer 40 is formed on the buffer layer 30 .
- the first spacer layer 50 is formed on the first planar doping layer 40 .
- the channel layer 60 is formed on the first spacer layer 50 .
- the second spacer layer 70 is formed on the channel layer 60 .
- the second planar doping layer 80 is formed on the second spacer layer 70 .
- the Schottky layer 90 is formed on the second planar doping layer 80 .
- the cap layer 100 is formed on the Schot
- the buffer layer 30 is an undoped In 0.5 Al 0.5 As buffer layer.
- the first spacer layer 50 is an undoped In 0.5 Al 0.5 As spacer layer.
- the channel layer 60 is a Si doping In 0.7 Ga 0.3 As channel layer.
- the Schottky layer 90 is an undoped In 0.5 Al 0.5 As Schottky layer.
- the cap layer 100 is a Si doping In 0.52 Ga 0.48 As cap layer.
- the MHEMT device structure comprises the transparent gate 110 on the Schottky layer 90 and the drain 120 and the source 130 formed on the cap layer 100 .
- Two-dimensional electron gas in the MHEMT exists in the quantum well formed by the channel layer.
- the generation of the electron comes from the first planar doping layer 40 and the second planar doping layer 80 .
- the electron passes through the first spacer layer 50 and the second spacer layer 70 to the channel layer 60 .
- the Schottky layer 90 on the second planar doping layer 80 can improve the Schottky barrier.
- the cap layer 100 can improve the ohmic contact resistivity.
- the invention sputters the ITO to the MHEMT device, using ITO as the gate metal.
- the length of the transparent gate is 1 ⁇ m.
- the distance between the drain 120 and the source 130 is 5 ⁇ m.
- the transparent gate 110 is conductive ITO (200 nm). Owing to The transparent gate is transparent, we also call it Transparent Gate-HEMT (Tg-HEMT).
- the conventional gate metal is Ti/Au (20 nm/190 nm). The conventional gate metal is illuminated by ⁇ 9 dBm to 0 dBm, 1.55 ⁇ m single mode laser.
- the bias point, Vd equals to 0.45V at the most sensitive position to the light wave (as shown in FIG. 8 ). However, according to the Tg-HEMT, Vd is 1.2V. Referring to FIG. 3 , Tg-HEMT is significantly more sensitive to light wave.
- the planar current density of the MHEMT device is 3.7 ⁇ 10 12 cm ⁇ 2 at room temperature.
- the hall mobility is 5830 cm 2 /V-s.
- the sheet resistance of the sputtered ITO thin film is 89 ohms/sq, and the resistivity is 6.6 ⁇ 10 ⁇ 4 ohms ⁇ cm.
- the transmittance is 83% and the reflectivity is 10%.
- the transmittance of the Ti (5 nm)/Au (5 nm)/ITO (190 nm) thin film is only 27%.
- the result shows Current-Voltage (I-V) characteristics of the transparent gate 110 of the invention.
- Applied voltage to the transparent gate 110 is from 0V to ⁇ 2.5V, and each step is ⁇ 0.1V.
- Applied voltage to the drain 120 is from 0V to 3V.
- the result shows Gm and Id characteristics of the transparent gate 110 of the invention.
- Applied voltage to the transparent gate 110 is from ⁇ 3V to 2V.
- Applied voltage to the drain 120 is 2V.
- the result shows Schottky characteristics of the transparent gate 110 of the invention.
- the starting voltage of the transparent gate 110 is 0.8V.
- the breakdown voltage of the transparent gate 110 is ⁇ 7.1V. Due to the epitaxial defects of the substrate, it has a leakage current.
Abstract
Description
Claims (8)
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US12/141,133 US7745853B2 (en) | 2008-06-18 | 2008-06-18 | Multi-layer structure with a transparent gate |
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US12/141,133 US7745853B2 (en) | 2008-06-18 | 2008-06-18 | Multi-layer structure with a transparent gate |
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US7745853B2 true US7745853B2 (en) | 2010-06-29 |
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Families Citing this family (5)
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US9105790B2 (en) * | 2009-11-05 | 2015-08-11 | The Boeing Company | Detector for plastic optical fiber networks |
US8324661B2 (en) * | 2009-12-23 | 2012-12-04 | Intel Corporation | Quantum well transistors with remote counter doping |
US8796738B2 (en) * | 2011-09-21 | 2014-08-05 | International Rectifier Corporation | Group III-V device structure having a selectively reduced impurity concentration |
CN110047910B (en) * | 2019-03-27 | 2020-07-31 | 东南大学 | Heterojunction semiconductor device with high voltage endurance capability |
CN112242441A (en) * | 2019-07-16 | 2021-01-19 | 联华电子股份有限公司 | High electron mobility transistor |
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US4821093A (en) * | 1986-08-18 | 1989-04-11 | The United States Of America As Represented By The Secretary Of The Army | Dual channel high electron mobility field effect transistor |
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US5596211A (en) * | 1993-01-14 | 1997-01-21 | Nec Corporation | Field effect transistor having a graded bandgap InGaAsP channel formed of a two-dimensional electron gas |
US5621228A (en) * | 1994-08-16 | 1997-04-15 | Nec Corporation | Heterojunction field effect transistor with non-alloy ohmic contact electrodes |
US5633516A (en) * | 1994-07-25 | 1997-05-27 | Hitachi, Ltd. | Lattice-mismatched crystal structures and semiconductor device using the same |
US5668387A (en) * | 1995-10-26 | 1997-09-16 | Trw Inc. | Relaxed channel high electron mobility transistor |
US6049097A (en) * | 1994-07-25 | 2000-04-11 | Nec Corporation | Reliable HEMT with small parasitic resistance |
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US20080001173A1 (en) * | 2006-06-23 | 2008-01-03 | International Business Machines Corporation | BURIED CHANNEL MOSFET USING III-V COMPOUND SEMICONDUCTORS AND HIGH k GATE DIELECTRICS |
-
2008
- 2008-06-18 US US12/141,133 patent/US7745853B2/en not_active Expired - Fee Related
Patent Citations (16)
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---|---|---|---|---|
US4821093A (en) * | 1986-08-18 | 1989-04-11 | The United States Of America As Represented By The Secretary Of The Army | Dual channel high electron mobility field effect transistor |
US5371388A (en) * | 1990-10-08 | 1994-12-06 | Canon Kabushiki Kaisha | Electron wave interference devices, methods for modulating an interference current and electron wave branching and/or combining devices and methods therefor |
US5319223A (en) * | 1991-07-26 | 1994-06-07 | Kabushiki Kaisha Toshiba | High electron mobility transistor |
US5596211A (en) * | 1993-01-14 | 1997-01-21 | Nec Corporation | Field effect transistor having a graded bandgap InGaAsP channel formed of a two-dimensional electron gas |
US5633516A (en) * | 1994-07-25 | 1997-05-27 | Hitachi, Ltd. | Lattice-mismatched crystal structures and semiconductor device using the same |
US6049097A (en) * | 1994-07-25 | 2000-04-11 | Nec Corporation | Reliable HEMT with small parasitic resistance |
US5621228A (en) * | 1994-08-16 | 1997-04-15 | Nec Corporation | Heterojunction field effect transistor with non-alloy ohmic contact electrodes |
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