US7652750B2 - Lithography exposure device having a plurality of radiation sources - Google Patents

Lithography exposure device having a plurality of radiation sources Download PDF

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Publication number
US7652750B2
US7652750B2 US11/392,970 US39297006A US7652750B2 US 7652750 B2 US7652750 B2 US 7652750B2 US 39297006 A US39297006 A US 39297006A US 7652750 B2 US7652750 B2 US 7652750B2
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United States
Prior art keywords
laser radiation
light
sensitive layer
exposure
radiation sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US11/392,970
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English (en)
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US20060170893A1 (en
Inventor
Hans Opower
Stefan Scharl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kleo Halbleitertechnik GmbH and Co KG
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Kleo Halbleitertechnik GmbH and Co KG
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Assigned to KLEO HALBLEITERTECHNIK GMBH & CO KG reassignment KLEO HALBLEITERTECHNIK GMBH & CO KG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OPOWER, HANS, SCHARL, STEFAN
Publication of US20060170893A1 publication Critical patent/US20060170893A1/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning

Definitions

  • two respective openings are preferably arranged such that they extend at an angle of 90° in relation to one another in order to achieve as high an intensity as possible of the laser radiation field passing through in the region of the passage area.
  • FIG. 8 shows a sectional illustration of the area X in FIG. 6 with a high power density of the laser radiation
  • FIG. 14 shows an illustration similar to FIG. 6 of a fourth embodiment
  • the strip areas 52 are either arranged such that their outer edges 54 and 56 overlap slightly in order to ensure that the conversion areas 34 generated by the exposure spot 30 associated with one of the strip areas 52 can be generated in an interconnected manner with the conversion areas 34 generated by the exposure spot 30 associated with the next closest strip area 52 or are arranged such that the strip areas 52 do not overlap.
  • the angle ⁇ thereby depends on the extent, to which the index of refraction n 2 of the second medium 64 differs from the index of refraction n 1 of the first medium 60 , and so the angle ⁇ is also variable at the same time due to variation of the index of refraction n 2 .
  • ⁇ : ⁇ (n 2 ⁇ n 1 ) ⁇ applies approximately for small angles, wherein ⁇ is the prism angle determining the prismatic spatial area 62 .
  • a 0.6 ⁇ ⁇ - NA , i.e., it is dependent on the wavelength ⁇ of the laser radiation 98 and the numerical aperture NA of the optical focusing means 24 .
  • connection with adaptation of the indices of refraction between the end lens 96 and the carrier 132 is brought about, for example, by way of connection of the carrier 132 to the end lens 96 by means of bonding, blowing together or adhesion, in particular such that a refractive index gradient between the material of the end lens 96 and the material of the carrier 132 is avoided.
  • the end surface 102 of the end lens 96 ′ extends only in a central area thereof, namely in the area, in which the focal points 100 are located, whereas the end lens 96 ′ is set back in relation to the end surface 102 in its outer areas 140 facing the light-sensitive layer 32 and surrounding the end surfaces 102 and, therefore, is at a greater distance from the light-sensitive layer 32 .
  • the longitudinal directions 154 and 164 each extend at an angle of 45° in relation to the direction of deflection, the movement of a focal point 100 , the electric field E of which is aligned at right angles to the direction of deflection 44 , on a path 170 intersecting the intersecting areas 150 results in the focal point 100 being arranged each time so as to cover the openings 152 , 162 only in the intersecting areas 150 and, therefore, the field 104 , the intensity of which corresponds to the maximum intensity, can form only when the focal point 100 is located over the respective intersecting areas 150 , as explained in conjunction with the intersecting areas 150 in the fifth embodiment.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Semiconductor Lasers (AREA)
US11/392,970 2003-09-29 2006-03-28 Lithography exposure device having a plurality of radiation sources Expired - Fee Related US7652750B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10346201A DE10346201A1 (de) 2003-09-29 2003-09-29 Lithografiebelichtungseinrichtung
DE10346201 2003-09-29
PCT/EP2004/010371 WO2005038340A2 (de) 2003-09-29 2004-09-16 Lithografiebelichtungseinrichtung

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/010371 Continuation WO2005038340A2 (de) 2003-09-29 2004-09-16 Lithografiebelichtungseinrichtung

Publications (2)

Publication Number Publication Date
US20060170893A1 US20060170893A1 (en) 2006-08-03
US7652750B2 true US7652750B2 (en) 2010-01-26

Family

ID=34399255

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/392,970 Expired - Fee Related US7652750B2 (en) 2003-09-29 2006-03-28 Lithography exposure device having a plurality of radiation sources

Country Status (5)

Country Link
US (1) US7652750B2 (de)
EP (1) EP1668422B1 (de)
AT (1) ATE533088T1 (de)
DE (1) DE10346201A1 (de)
WO (1) WO2005038340A2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090296063A1 (en) * 2006-12-11 2009-12-03 Kleo Maschinenbau Ag Exposure apparatus
US8811665B2 (en) 2009-07-03 2014-08-19 Kleo Halbleitertechnik Gmbh Processing system
US20160105599A1 (en) * 2014-10-12 2016-04-14 Himax Imaging Limited Automatic focus searching using focal sweep technique

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000072092A1 (de) 1999-05-19 2000-11-30 Deutsches Zentrum für Luft- und Raumfahrt e.V. Lithographie-belichtungseinrichtung und lithographie-verfahren
US6274288B1 (en) * 1995-06-12 2001-08-14 California Institute Of Technology Self-trapping and self-focusing of optical beams in photopolymers
US6368775B1 (en) 2000-01-27 2002-04-09 Sandia Corporation 3-D photo-patterning of refractive index structures in photosensitive thin film materials
US20020114567A1 (en) 2001-02-07 2002-08-22 Lukas Novotny System and method for high resolution optical imaging, data storage, lithography, and inspection
EP1319984A2 (de) 2001-12-07 2003-06-18 KLEO Halbleitertechnik GmbH & Co KG Lithographiebelichtungseinrichtung
US20030162124A1 (en) 2001-09-05 2003-08-28 Fuji Photo Film Co., Ltd. Compound which performs non-resonant two-photon absorption, non-resonant two-photon light-emitting compound and non-resonant two-photon absorption induction method and process for emitting light thereby, optical data recording medium and process for recording data thereon, and two-photon polymerizable composition and process for polymerization thereof
US6692894B1 (en) 1999-08-30 2004-02-17 Agency Of Industrial Science And Technology Photolithographic pattern-forming material and method for formation of fine pattern therwith
US7310463B2 (en) * 2002-09-09 2007-12-18 Kyocera Corporation Optical structural body, its manufacturing method and optical element

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274288B1 (en) * 1995-06-12 2001-08-14 California Institute Of Technology Self-trapping and self-focusing of optical beams in photopolymers
WO2000072092A1 (de) 1999-05-19 2000-11-30 Deutsches Zentrum für Luft- und Raumfahrt e.V. Lithographie-belichtungseinrichtung und lithographie-verfahren
US20010021484A1 (en) * 1999-05-19 2001-09-13 Uwe Brauch Lithography exposure device and lithography process
US6692894B1 (en) 1999-08-30 2004-02-17 Agency Of Industrial Science And Technology Photolithographic pattern-forming material and method for formation of fine pattern therwith
US6368775B1 (en) 2000-01-27 2002-04-09 Sandia Corporation 3-D photo-patterning of refractive index structures in photosensitive thin film materials
US20020114567A1 (en) 2001-02-07 2002-08-22 Lukas Novotny System and method for high resolution optical imaging, data storage, lithography, and inspection
US20030162124A1 (en) 2001-09-05 2003-08-28 Fuji Photo Film Co., Ltd. Compound which performs non-resonant two-photon absorption, non-resonant two-photon light-emitting compound and non-resonant two-photon absorption induction method and process for emitting light thereby, optical data recording medium and process for recording data thereon, and two-photon polymerizable composition and process for polymerization thereof
EP1319984A2 (de) 2001-12-07 2003-06-18 KLEO Halbleitertechnik GmbH & Co KG Lithographiebelichtungseinrichtung
US7310463B2 (en) * 2002-09-09 2007-12-18 Kyocera Corporation Optical structural body, its manufacturing method and optical element

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Boisset, Buillaume. "Luxpop: Thin film and bulk index of refraction and photonics calculations." www.luxpop.com. Accessed Jan. 31, 2008. *
Kewitsch, Anthony S. and Yariv, Amnon (Jan. 22, 1996). "Nonlinear optical properties of photoresists for projection lithography." Applied Physics Letters, 68 (4). pp. 455-457. *
Misawa, et al, "Microfabrication by Femtosecond Laser Irradiation", Proceedings of SPIE, vol. 3933, pp. 246-260 (2000).
Patent Abstracts of Japan, Publication No. 2001319382, "Exposure Device of Master Disk for Optical Recording Medium, Exposure Method of Master Disk for Optical Recording Medium, Optical Pickup and Optical Recording Method", Nov. 16, 2001.
Patent Abstracts of Japan, vol. 2000, No. 20, Publication No. 2001066783, Material for Forming Fine Pattern, and Fine Pattern Forming Method Using the Same, Mar. 16, 2001.
Rostami et al., "A Proposal for High Resolution Photolithography Using Optical Limiters", Laser Phys. Lett. 1, No. 9, pp. 462-467, 2004.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090296063A1 (en) * 2006-12-11 2009-12-03 Kleo Maschinenbau Ag Exposure apparatus
US8314921B2 (en) 2006-12-11 2012-11-20 Kleo Ag Exposure apparatus
US8811665B2 (en) 2009-07-03 2014-08-19 Kleo Halbleitertechnik Gmbh Processing system
US20160105599A1 (en) * 2014-10-12 2016-04-14 Himax Imaging Limited Automatic focus searching using focal sweep technique
US9525814B2 (en) * 2014-10-12 2016-12-20 Himax Imaging Limited Automatic focus searching using focal sweep technique

Also Published As

Publication number Publication date
DE10346201A1 (de) 2005-04-28
ATE533088T1 (de) 2011-11-15
US20060170893A1 (en) 2006-08-03
EP1668422A2 (de) 2006-06-14
EP1668422B1 (de) 2011-11-09
WO2005038340A3 (de) 2005-06-23
WO2005038340A2 (de) 2005-04-28

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