US7387739B2 - Mask and method of manufacturing the same, electroluminescent device and method of manufacturing the same, and electronic instrument - Google Patents
Mask and method of manufacturing the same, electroluminescent device and method of manufacturing the same, and electronic instrument Download PDFInfo
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- US7387739B2 US7387739B2 US10/412,323 US41232303A US7387739B2 US 7387739 B2 US7387739 B2 US 7387739B2 US 41232303 A US41232303 A US 41232303A US 7387739 B2 US7387739 B2 US 7387739B2
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- etching
- substrate
- mask
- penetrating holes
- openings
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
Definitions
- the present invention relates to a mask and a method of manufacturing the mask, an electroluminescent device and a method of manufacturing the electroluminescent device, and an electronic instrument.
- a high precision mask has been demanded.
- EL color organic electroluminescent
- an organic material of each color is evaporated by using a mask, for example.
- a pattern of penetrating holes is formed on the mask. If the inner wall surfaces of the penetrating holes are tapered and the material is evaporated in the direction from the side of large openings to the side of small openings, the amount of evaporation particles incident upon the penetrating holes can be increased, whereby a fine pattern corresponding to the small openings can be evaporated.
- etching a substrate utilizing crystal orientation dependence has been known.
- a method of manufacturing a mask including formation of a plurality of penetrating holes in a substrate, each of the penetrating holes connecting a first opening and a second opening larger than the first opening, the method comprising:
- a mask comprising a substrate in which a plurality of penetrating holes are formed, wherein:
- each of the penetrating holes has inclined inner wall surfaces and connects a first opening and a second opening larger than the first opening;
- each of the penetrating holes is partitioned from at least one adjacent penetrating hole only by the inner wall surfaces on the side of the second openings.
- a method of manufacturing an electroluminescent device comprising depositing a luminescent material by using any one of the above-described masks.
- an electroluminescent device manufactured by the above method.
- an electronic instrument comprising the above electroluminescent device.
- FIGS. 1A and 1B are views showing a mask according to a first embodiment of the present invention.
- FIG. 2 is a partially enlarged view of the mask according to the first embodiment of the present invention.
- FIGS. 3A to 3E are views illustrating a method of manufacturing the mask according to the first embodiment of the present invention.
- FIGS. 4A and 4B are views illustrating a method of manufacturing a mask according to a second embodiment of the present invention.
- FIG. 5 is a view illustrating a method of manufacturing an EL device according to a third embodiment of the present invention.
- FIGS. 6A to 6C are views illustrating a method of depositing luminescent materials.
- FIG. 7 is a view showing the EL device according to the third embodiment of the present invention.
- FIG. 8 is a view showing an electronic instrument according to one embodiment of the present invention.
- FIG. 9 is a view showing another electronic instrument according to one embodiment of the present invention.
- An objective of embodiments of the present invention is to manufacture a high precision mask.
- a method of manufacturing a mask including formation of a plurality of penetrating holes in a substrate, each of the penetrating holes connecting a first opening and a second opening larger than the first opening, the method comprising:
- the method of manufacturing a mask of the present invention areas in the second surface of the substrate in which the penetrating holes are formed are exposed, so that the mask can be manufactured irrespective of difficulty in forming an etching resistant film on the second surface. Moreover, since the etching resistant film is formed on the first surface of the substrate avoiding areas in which the first openings are formed, the first openings (smaller than the second openings) can be formed to have precise position and shape. Furthermore, since areas each of which includes two or more of the second openings are exposed on the second surface in which the second openings (larger than the first openings) are formed, the interval between adjacent second openings can be reduced, whereby the mask precision can be improved.
- the smaller holes than the penetrating holes may be formed by applying one of laser processing, microblast processing, time-modulated plasma etching, and machining.
- a solution in which tetramethylammonium hydroxide is dissolved in an amount of 10 to 30 wt % may be used for etching with crystal orientation dependence.
- the etching resistant film may be also formed on the second surface avoiding areas in which the penetrating holes are formed.
- the step (c) may be performed after the step (b), and the smaller holes than the penetrating holes may be enlarged by etching with crystal orientation dependence in the step (c).
- step (c) may be performed before and after the step (b);
- etching may be performed with crystal orientation dependence before the step (b) on both the first and second surfaces of the substrate until the etching stops at least on the first surface;
- the smaller holes than the penetrating holes may be enlarged by etching with crystal orientation dependence after the step (b).
- the substrate can be made thinner by etching the areas in which the penetrating holes are formed before forming the smaller holes than the penetrating holes. Therefore, the smaller holes than the penetrating holes can be easily formed.
- the substrate may be a single crystal silicon substrate
- each of the first and second surfaces of the substrate may have Miller indices ⁇ 100 ⁇ ;
- inner wall surfaces of the penetrating holes may have Miller indices ⁇ 111 ⁇ ;
- the crystal orientation dependence in the etching may be a property in which an etching rate for the ⁇ 111 ⁇ planes is lower than etching rates for planes having Miller indices other than ⁇ 111 ⁇ .
- the etching in the step (c) may be terminated after all surfaces of the substrate exposed from the etching resistant film become ⁇ 111 ⁇ planes.
- a mask comprising a substrate in which a plurality of penetrating holes are formed, wherein:
- each of the penetrating holes has inclined inner wall surfaces and connects a first opening and a second opening larger than the first opening;
- each of the penetrating holes is partitioned from at least one adjacent penetrating hole only by the inner wall surfaces on the side of the second openings.
- the mask of the present invention since the interval between adjacent second openings is small, the mask pattern precision is improved.
- the substrate may be a single crystal silicon substrate; and the inner wall surfaces of the penetrating holes may have Miller indices ⁇ 111 ⁇ .
- an electroluminescent device comprising depositing a luminescent material by using any one of the above masks.
- an electroluminescent device manufactured by the above method.
- an electronic instrument comprising the above electroluminescent device.
- FIGS. 1A and 1B are views showing a mask according to a first embodiment of the present invention.
- FIG. 1B is a cross-sectional view taken along the line IB-IB shown in FIG. 1A .
- FIG. 2 is a partially enlarged view of FIG. 1A .
- a mask 1 has a substrate (or a single crystal substrate, for example) 10 .
- the mask 1 could be formed of only a substrate (or a single crystal substrate, for example) 10 .
- the substrate 10 may be a single crystal silicon substrate or a silicon wafer.
- Opposite surfaces (first and second surfaces 12 and 14 ) of the substrate 10 may have Miller indices ⁇ 100 ⁇ . Note that the ⁇ 100 ⁇ planes include a plurality of planes equivalent to the (100) plane. In a cubic lattice, directions perpendicular to the ⁇ 100 ⁇ planes are ⁇ 100> directions.
- the substrate 10 includes at least one thin section 16 .
- a plurality of thin sections 16 may be arranged in matrix.
- the substrate 10 has a thick section 18 in addition to the thin sections 16 .
- the thick section 18 keeps the strength of the substrate 10 .
- the thin sections 16 are formed to avoid the edge of the substrate 10 .
- the thick section 18 may be formed on the edge of the substrate 10 . If the thin sections 16 are surrounded by the thick section 18 , the thin sections 16 are rarely deformed.
- the thin sections 16 are positioned close to the first surface 12 (or one of the surfaces) in the direction of the thickness of the substrate 10 .
- the thin sections 16 are bottoms of depressed sections formed on the second surface 14 (or a surface opposite to the first surface 12 ) of the substrate 10 .
- the thin sections 16 and the area other than the thin sections 16 (thick section 18 ) are level on a surface (or the first surface 12 ) opposite to the surface in which the depressed sections are formed (or the second surface 14 ).
- a plurality of penetrating holes 20 are formed in the substrate 10 .
- the penetrating holes 20 constitute the thin section 16 .
- one thin section 16 consists of a group of the penetrating holes 20 .
- Each of the penetrating holes 20 connects first and second openings 22 and 24 .
- the first openings 22 are formed in the first surface 12
- the second openings 24 are formed in the second surface 14 .
- the second openings 24 are larger than the first openings 22 .
- the first and second openings 22 and 24 may be in the shape of a polygon such as a square or a rectangle, a circle, or an ellipse.
- the shapes of the first and second openings 22 and 24 may be similar or different.
- Inner wall surfaces 26 of the penetrating holes 20 are at an oblique angle to at least one of the first and second surfaces 12 and 14 of the substrate 10 .
- the inner wall surfaces 26 may be flat. In this embodiment, the inner wall surfaces 26 are ⁇ 111 ⁇ planes. In the case where the substrate 10 is a single crystal silicon substrate and the first surface 12 is a ⁇ 100 ⁇ plane, the angle formed by the inner wall surfaces 26 and the first surface 12 is 54.7°.
- Each of the penetrating holes 20 is partitioned from at least one of the adjacent penetrating holes 20 only by the inner wall surfaces 26 on the side of the second surface 14 . In other words, only a corner section formed by the inner wall surfaces 26 is present between adjacent penetrating holes 20 on the side of the second surface 14 . According to this configuration, since the interval between adjacent second openings 24 is reduced, the pattern precision of the mask 1 is improved.
- FIGS. 3A to 3E are views illustrating a method of manufacturing a mask according to the first embodiment of the present invention.
- the substrate 10 is provided in a state before the penetrating holes 20 and others are formed.
- the substrate 10 may be a single crystal silicon substrate or a silicon wafer, for example.
- the substrate 10 has a surface having Miller indices ⁇ 100 ⁇ such as opposite surfaces (first and second surfaces 12 and 14 ). At least one of the first and second surfaces 12 and 14 of the substrate 10 may be mirror-ground in advance.
- an etching resistant film 30 is formed on the substrate 10 (to a thickness of about 1 ⁇ m, for example).
- the etching resistant film 30 is formed on at least the first surface 12 of the substrate 10 , and may also be formed on the second surface 14 .
- the etching resistant film 30 may be formed to continuously cover the entire surface (including side surfaces at the edges of the first and second surfaces 12 and 14 ) of the substrate 10 .
- the etching resistant film 30 may be formed by using silicon oxide obtained by thermal oxidation (such as wet thermal oxidation), silicon nitride, or silicon carbide.
- the etching resistant film 30 maybe a silicon nitride film formed by CVD, or a gold or chromium film formed by sputtering.
- the etching resistant film 30 is formed on the first surface 12 of the substrate 10 avoiding areas in which the first openings 22 of the penetrating holes 20 will be formed.
- a plurality of first etching openings 32 are formed in the etching resistant film 30 on the first surface 12 , as shown in FIG. 3B .
- the first etching openings 32 are located to correspond to the first openings 22 to be formed, and may have the same shape as the first openings 22 .
- part of the first surface 12 is exposed. Each of these exposed areas on the side of the first surface 12 will not include two or more adjacent penetrating holes 20 .
- the etching resistant film 30 In the second surface 14 of the substrate 10 , areas in which the penetrating holes 20 will be formed are exposed so as to expose areas each of which will includes two or more of the second openings.
- one or more second etching openings 34 are formed in the etching resistant film 30 .
- the second etching openings 34 correspond to areas in which the thin sections 16 shown in FIG. 1A are formed, and may have the same shape as the thin sections 16 . If the etching resistant film 30 is formed also on the second surface 14 , part of the first and second surfaces 12 and 14 covered by the etching resistant films 30 will not etched. In this case, thick part of the substrate 10 remains, so the mask 1 having high strength can be manufactured.
- Each of the first etching openings 32 is included in a region (or a projected region) of one of the second etching openings 34 .
- Photolithography and etching (such as wet etching using an aqueous solution of fluoborate and ammonium fluoride) may be applied for forming the first and second etching openings 32 and 34 .
- holes 36 (hereinafter called “small holes”) smaller than the penetrating holes 20 are formed in the areas in which the penetrating holes 20 will be formed.
- the small holes 36 may be formed by applying any of laser (such as YAG laser or CO 2 laser) processing, microblast processing (in which fine abrasives are blasted by a jet), time-modulated plasma etching (in which formation of sidewall protective films and etching are alternately performed), and machining using a drill or the like.
- the small holes 36 are respectively formed in the first etching openings 32 on the first surface 12 .
- etching is started from both sides of the first and second surfaces 12 and 14 of the substrate 10 using the etching resistant films 30 as masks. Since etching is performed after forming the small holes 36 , the small holes 36 are enlarged by etching.
- etching may have crystal orientation dependence in which the etching rate of the ⁇ 111 ⁇ plane is (10 times or more, and preferably 100 times or more, for example) lower than the etching rates of the ⁇ 100 ⁇ plane and the ⁇ 110 ⁇ plane, for example.
- Such etching may be performed by using an organic amine type alkaline aqueous solution such as a solution in which tetramethylammonium hydroxide is dissolved in an amount of 10 to 30 wt % (in particular, about 10 to 20 wt %), and heating the solution up to about 80° C.
- An inorganic alkaline aqueous solution other than a potassium hydroxide aqueous solution, such as aqueous ammonia may also be used.
- Use of an alkaline solution containing neither potassium nor sodium prevents the mask 1 from being contaminated during the manufacture of the mask 1 , whereby contamination of a TFT substrate or the like which is an object of evaporation can be prevented during evaporation using the mask 1 .
- the present invention does not exclude etching using potassium.
- a 15% potassium hydroxide solution may be heated at about 80° C. and used for etching.
- FIG. 3D illustrates an example in which the substrate 10 is a silicon substrate, the first and second surfaces 12 and 14 being the ⁇ 100 ⁇ planes, and etching having crystal orientation dependence in which the etching rate of the ⁇ 111 ⁇ plane is (10 times or more, and preferably 100 times or more, for example) lower than the etching rates of the ⁇ 100 ⁇ plane and the ⁇ 110 ⁇ plane is performed.
- the ⁇ 100 ⁇ plane exposed in the first etching openings 32 is etched on the first surface 12 , whereby the small holes 36 are enlarged. Enlargement of the small holes 36 by etching stops at the first etching openings 32 in the etching resistant film 30 .
- the ⁇ 100 ⁇ plane exposed in the second etching openings 34 is etched on the second surface 14 . Since regions between the adjacent small holes 36 are also exposed on the second surface 14 , the ⁇ 100 ⁇ plane is also etched in these regions.
- the thin sections 16 can be formed on the substrate 10 in this manner. Etching is terminated after all the surfaces of the substrate 10 exposed from the etching resistant film 30 become the ⁇ 111 ⁇ planes.
- the penetrating holes 20 can be formed in this manner. In the example shown in FIG. 3D , all the inner wall surfaces of the penetrating holes 20 are formed by the ⁇ 111 ⁇ planes. If necessary, the etching resistant films 30 are removed as shown in FIG. 3E . In the case where the etching resistant film 30 is formed of an insulator, adhesion of particles due to static electricity can be prevented by removing the etching resistant film 30 .
- the substrate 10 may optionally be cut by dicing or the like.
- the mask 1 shown in FIG. 1 can be manufactured by these steps.
- the mask 1 can be manufactured irrespective of difficulty in forming the etching resistant film 30 on the second surface 14 . Moreover, since the etching resistant film 30 is formed on the first surface 12 of the substrate 10 avoiding the areas in which the first openings 22 will be formed, the position and shape of the first openings 22 (smaller than the second openings 24 ) can be precisely determined. Furthermore, since areas in each of which two or more of the second openings 24 (larger than the first openings 22 ) will be formed are exposed on the second surface 14 , the interval between adjacent second openings 24 can be reduced, whereby precision of the mask 1 can be improved.
- FIGS. 4A and 4B are views illustrating a method of manufacturing a mask according to a second embodiment of the present invention.
- the steps shown in FIGS. 3A and 3B are performed.
- the etching resistant films 30 are formed on the first and second surfaces 12 and 14 of the substrate 10
- the first etching openings 32 are formed in the etching resistant film 30 on the first surface 12
- the second etching openings 34 are formed in the etching resistant film 30 on the second surface 14 .
- a step shown in FIG. 4A is then performed. Specifically, etching having crystal orientation dependence is performed from both the first and second surfaces 12 and 14 of the substrate 10 .
- the etching may be performed by using an organic amine type alkaline aqueous solution such as a solution in which tetramethylammonium hydroxide is dissolved in an amount of 10 to 30 wt % (in particular, about 10 to 20 wt %), and heating the solution at about 80° C.
- An inorganic alkaline aqueous solution other than a potassium hydroxide aqueous solution, such as aqueous ammonia, may also be used.
- an alkaline solution containing neither potassium nor sodium prevents the mask 1 from being contaminated during the manufacture of the mask 1 , whereby contamination of a TFT substrate or the like which is an object of evaporation can be prevented during evaporation using the mask 1 .
- the present invention does not exclude etching using potassium.
- a 15% potassium hydroxide solution may be heated at about 80° C. and used for etching.
- FIG. 4A illustrates an example in which the substrate 10 is a silicon substrate, the first and second surfaces 12 and 14 being the ⁇ 100 ⁇ planes, and etching having crystal orientation dependence in which the etching rate of the ⁇ 111 ⁇ plane is (10 times or more, and preferably 100 times or more, for example) lower than the etching rates of the ⁇ 100 ⁇ plane and the ⁇ 110 ⁇ plane is performed.
- the first etching openings 32 are partitioned corresponding to areas in which the penetrating holes 20 will be formed, each exposed area is small. Therefore, etching stops at the ⁇ 111 ⁇ planes.
- the second etching openings 34 are formed to correspond to areas in each of which two or more of the penetrating holes 20 will be formed, so that each exposed area is large. Therefore, etching proceeds deeply, whereby the substrate 10 can be made thinner. Etching is performed while managing the solution temperature and time. Etching may be performed until etching stops at least on the first surface 12 .
- the small holes 36 which are smaller than the penetrating holes 20 , are formed in areas in which the penetrating holes 20 will be formed (or within the first etching openings 32 ).
- the small holes 36 can be formed by applying time-modulated plasma etching (in which formation of sidewall protective films and etching are alternately performed), or machining using a drill or the like. Other features are the same as the features described in the first embodiment with reference to FIG. 3C .
- the succeeding steps are the same as the steps described in the first embodiment with reference to FIGS. 3D and 3E .
- the small holes 36 are enlarged by etching having crystal orientation dependence.
- the mask 1 shown in FIG. 3E can also be manufactured.
- Other features are the same as described in the first embodiment.
- FIG. 5 is a view illustrating a method of manufacturing an EL device according to a third embodiment of the present invention.
- a magnetic film 52 is formed on the mask 1 shown in FIG. 5 .
- the magnetic film 52 may be formed by using a ferromagnetic material such as iron, cobalt, or nickel.
- the magnetic film 52 may be formed by using a magnetic metal material such as Ni, Co, Fe, or a stainless alloy containing an Fe component, or combinations of a magnetic metal material and a non-magnetic metal material.
- Other details of the mask 1 are the same as described in the first and second embodiments.
- luminescent materials are deposited on a substrate 54 by using the mask 1 .
- the substrate 54 is a transparent substrate such as a glass substrate used for an EL device (organic EL device, for example).
- an electrode (transparent electrode formed of ITO or the like, for example) 56 and a hole transport layer 58 are formed on the substrate 54 .
- An electron transport layer may also be formed.
- the mask 1 is disposed so that the first surface 12 in which the first openings 22 are formed faces the substrate 54 . Specifically, the flat surface of the mask 1 faces the substrate 54 .
- a magnet 50 is disposed on the back side of the substrate 54 so as to attract the magnetic film 52 formed on the mask 1 . Therefore, if warping of the mask 1 occurs, the warping can be corrected.
- FIGS. 6A to 6C are views illustrating a method for depositing the luminescent materials.
- the luminescent materials are organic materials, for example.
- a quinolinol aluminum complex Alq 3
- a high-molecular-weight organic material poly(p-phenylene vinylene) (PPV) can be given.
- the luminescent materials may be deposited by evaporation.
- a red luminescent material is deposited through the mask 1 while patterning to form red luminescent layers 60 .
- FIG. 6B the mask 1 is moved and a green luminescent material is deposited while patterning to form green luminescent layers 62 .
- the mask 1 is moved again and a blue luminescent material is deposited while patterning to form blue luminescent layers 64 .
- FIG. 7 is a view showing an EL device manufactured by using the above-described deposition method for the luminescent materials.
- the EL device (organic EL device, for example) includes the substrate 54 , electrodes 56 , hole transport layer 58 , luminescent layers 60 , 62 , and 64 , and the like.
- An electrode 66 is formed on the luminescent layers 60 , 62 , and 64 .
- the electrode 66 is a cathode electrode, for example.
- the EL device (EL panel) becomes a display device (display).
- FIGS. 8 and 9 respectively show a notebook-type personal computer 1000 and a portable telephone 2000 as examples of an electronic instrument including the EL device according to the embodiment of the present invention.
- the present invention is not limited to the above-described embodiments, and various modifications can be made.
- the present invention includes various other configurations substantially the same as the configurations described in the embodiments (in function, method and effect, or in objective and effect, for example).
- the present invention also includes a configuration in which an unsubstantial portion in the described embodiments is replaced.
- the present invention also includes a configuration having the same effects as the configurations described in the embodiments, or a configuration able to achieve the same objective.
- the present invention includes a configuration in which a publicly known technique is added to the configurations in the embodiments.
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- Organic Chemistry (AREA)
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Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002-114682 | 2002-04-17 | ||
JP2002114682A JP3856123B2 (en) | 2002-04-17 | 2002-04-17 | MASK AND ITS MANUFACTURING METHOD, ELECTROLUMINESCENT DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
Publications (2)
Publication Number | Publication Date |
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US20040026360A1 US20040026360A1 (en) | 2004-02-12 |
US7387739B2 true US7387739B2 (en) | 2008-06-17 |
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US10/412,323 Active 2025-12-02 US7387739B2 (en) | 2002-04-17 | 2003-04-14 | Mask and method of manufacturing the same, electroluminescent device and method of manufacturing the same, and electronic instrument |
Country Status (5)
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US (1) | US7387739B2 (en) |
JP (1) | JP3856123B2 (en) |
KR (1) | KR100503616B1 (en) |
CN (1) | CN1249521C (en) |
TW (1) | TW593712B (en) |
Families Citing this family (13)
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JP3775493B2 (en) * | 2001-09-20 | 2006-05-17 | セイコーエプソン株式会社 | Mask manufacturing method |
KR100903818B1 (en) * | 2003-11-12 | 2009-06-25 | 에스케이씨 주식회사 | Methode for manufacturing shadow mask for organic electroluminescence device |
JP3794407B2 (en) | 2003-11-17 | 2006-07-05 | セイコーエプソン株式会社 | Mask, mask manufacturing method, display device manufacturing method, organic EL display device manufacturing method, organic EL device, and electronic apparatus |
US20080118707A1 (en) * | 2006-11-22 | 2008-05-22 | Advanced Chip Engineering Technology Inc. | Method and structure of pattern mask for dry etching |
DE102007031549B4 (en) | 2007-07-06 | 2021-07-08 | Robert Bosch Gmbh | Single crystal silicon device and method of making a single crystal silicon device |
ITMI20080615A1 (en) * | 2008-04-08 | 2009-10-09 | St Microelectronics Srl | METHOD FOR THE REALIZATION OF A IMPROVED EFFICIENT MICROREACTOR FOR AN ENERGY PRODUCTION SYSTEM FOR PORTABLE MICROCELL APPLICATIONS |
CN103208592A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Evaporating method of organic light-emitting diode |
JP6155650B2 (en) * | 2013-01-11 | 2017-07-05 | 大日本印刷株式会社 | Manufacturing method of vapor deposition mask |
CN104213072B (en) * | 2013-05-31 | 2016-09-14 | 旭晖应用材料股份有限公司 | Combined type shade and manufacture method thereof |
CN104532183B (en) * | 2015-01-26 | 2017-09-26 | 深圳市华星光电技术有限公司 | The preparation method of high-precision mask plate |
JP2020158843A (en) * | 2019-03-27 | 2020-10-01 | 日立金属株式会社 | Clad plate material for metal mask and metal mask |
JP2022071292A (en) * | 2020-10-28 | 2022-05-16 | キヤノン株式会社 | Vapor deposition mask, and production method of device using vapor deposition mask |
CN113088875B (en) * | 2021-04-02 | 2022-12-13 | 京东方科技集团股份有限公司 | Mask and preparation method thereof |
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US6059981A (en) * | 1997-04-14 | 2000-05-09 | Nikon Corporation | Fiducial marks for charged-particle-beam exposure apparatus and methods for forming same |
US6235626B1 (en) | 1997-11-28 | 2001-05-22 | Nec Corporation | Method of forming a gate electrode using an insulating film with an opening pattern |
JP2001185350A (en) | 1999-12-24 | 2001-07-06 | Sanyo Electric Co Ltd | Worn mask, its manufacturing method, electroluminescent display device and its manufacturing method |
JP2002004034A (en) | 2000-06-23 | 2002-01-09 | Sanyo Electric Co Ltd | Mask for vapor deposition and its production method |
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US20030054646A1 (en) * | 2001-09-20 | 2003-03-20 | Seiko Epson Corporation | Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
-
2002
- 2002-04-17 JP JP2002114682A patent/JP3856123B2/en not_active Expired - Lifetime
-
2003
- 2003-04-14 US US10/412,323 patent/US7387739B2/en active Active
- 2003-04-16 TW TW092108823A patent/TW593712B/en not_active IP Right Cessation
- 2003-04-17 CN CNB031231322A patent/CN1249521C/en not_active Expired - Lifetime
- 2003-04-17 KR KR10-2003-0024420A patent/KR100503616B1/en active IP Right Grant
Patent Citations (9)
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US4961821A (en) * | 1989-11-22 | 1990-10-09 | Xerox Corporation | Ode through holes and butt edges without edge dicing |
JPH04236758A (en) | 1991-01-16 | 1992-08-25 | Oki Electric Ind Co Ltd | Mask for vapor deposition |
US6059981A (en) * | 1997-04-14 | 2000-05-09 | Nikon Corporation | Fiducial marks for charged-particle-beam exposure apparatus and methods for forming same |
US6365058B1 (en) * | 1997-10-22 | 2002-04-02 | Hewlett-Packard Company | Method of manufacturing a fluid ejection device with a fluid channel therethrough |
US6235626B1 (en) | 1997-11-28 | 2001-05-22 | Nec Corporation | Method of forming a gate electrode using an insulating film with an opening pattern |
JP2001185350A (en) | 1999-12-24 | 2001-07-06 | Sanyo Electric Co Ltd | Worn mask, its manufacturing method, electroluminescent display device and its manufacturing method |
JP2002004034A (en) | 2000-06-23 | 2002-01-09 | Sanyo Electric Co Ltd | Mask for vapor deposition and its production method |
US20030054646A1 (en) * | 2001-09-20 | 2003-03-20 | Seiko Epson Corporation | Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
US6893575B2 (en) * | 2001-09-20 | 2005-05-17 | Seiko Epson Corporation | Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
Non-Patent Citations (3)
Title |
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U.S. Appl. No. 10/246,731, filed Sep. 19, 2002, Yotsuya. |
U.S. Appl. No. 10/247,360, filed Sep. 20, 2002, Yotsuya. |
U.S. Appl. No. 10/247,570, filed Sep. 20, 2002, Yotsuya. |
Also Published As
Publication number | Publication date |
---|---|
CN1249521C (en) | 2006-04-05 |
KR20030082486A (en) | 2003-10-22 |
CN1452010A (en) | 2003-10-29 |
KR100503616B1 (en) | 2005-07-22 |
JP3856123B2 (en) | 2006-12-13 |
JP2003308972A (en) | 2003-10-31 |
US20040026360A1 (en) | 2004-02-12 |
TW593712B (en) | 2004-06-21 |
TW200307052A (en) | 2003-12-01 |
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