US7252871B2 - Polishing pad having a pressure relief channel - Google Patents

Polishing pad having a pressure relief channel Download PDF

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Publication number
US7252871B2
US7252871B2 US10/869,657 US86965704A US7252871B2 US 7252871 B2 US7252871 B2 US 7252871B2 US 86965704 A US86965704 A US 86965704A US 7252871 B2 US7252871 B2 US 7252871B2
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United States
Prior art keywords
polishing
void
layer
pressure relief
polishing pad
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Expired - Fee Related, expires
Application number
US10/869,657
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English (en)
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US20050281983A1 (en
Inventor
T. Todd Crkvenac
Robert T. Gamble
Jason M. Lawhorn
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Rohm and Haas Electronic Materials CMP Holdings Inc
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Rohm and Haas Electronic Materials CMP Holdings Inc
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Priority to US10/869,657 priority Critical patent/US7252871B2/en
Assigned to ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC. reassignment ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LAWHORN, JASON M., CRKVENAC, T. TODD, GAMBLE, ROBERT T.
Priority to TW094116736A priority patent/TW200602156A/zh
Priority to CNB2005100779492A priority patent/CN100388431C/zh
Priority to KR1020050051542A priority patent/KR20060048382A/ko
Priority to JP2005175893A priority patent/JP4761846B2/ja
Publication of US20050281983A1 publication Critical patent/US20050281983A1/en
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Publication of US7252871B2 publication Critical patent/US7252871B2/en
Expired - Fee Related legal-status Critical Current
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/12—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with apertures for inspecting the surface to be abraded
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24744—Longitudinal or transverse tubular cavity or cell

Definitions

  • the present invention relates to polishing pads for chemical mechanical planarization (CMP), and in particular, relates to polishing pads having reduced stress windows formed therein for performing optical end-point detection. Further, the present invention relates to polishing pads having a pressure relief channel to reduce stress on the windows.
  • CMP chemical mechanical planarization
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma-enhanced chemical vapor deposition
  • ECP electrochemical plating
  • Planarization is useful in removing undesired surface topography and surface defects, such as rough surfaces, agglomerated materials, crystal lattice damage, scratches, and contaminated layers or materials.
  • Chemical mechanical planarization or chemical mechanical polishing (CMP) is a common technique used to planarize substrates, such as semiconductor wafers.
  • CMP chemical mechanical planarization
  • a wafer carrier is mounted on a carrier assembly and positioned in contact with a polishing pad in a CMP apparatus.
  • the carrier assembly provides a controllable pressure to the wafer, pressing it against the polishing pad.
  • the pad is moved (e.g., rotated) relative to the wafer by an external driving force.
  • a chemical composition (“slurry”) or other polishing solution is provided between the wafer and the polishing pad.
  • slurry chemical composition
  • the wafer surface is thus polished and made planar by the chemical and mechanical action of the pad surface and slurry.
  • planarization end-point detection methods have been developed, for example, methods involving optical in-situ measurements of the wafer surface.
  • the optical technique involves providing the polishing pad with a window for select wavelengths of light. A light beam is directed through the window to the wafer surface, where it reflects and passes back through the window to a detector (e.g., a spectrophotometer). Based on the return signal, properties of the wafer surface (e.g., the thickness of films) can be determined for end-point detection.
  • Roberts in U.S. Pat. No. 5,605,760, discloses a polishing pad having a window formed therein.
  • a window is cast and inserted into a flowable polishing pad polymer.
  • This polishing pad may be utilized in a stacked configuration (i.e., with a subpad) or used alone, directly adhered on the platen of a polishing apparatus with an adhesive. In either case, there is a “void” or space that is created between the window and the platen.
  • undue stress is applied to the window from the pressure that is generated in the void and may cause unwanted residual stress deformations (e.g., “bulges” or “caving-in”) in the window. These stress deformations may result in non-planar windows and cause poor end-point detection, defectivity and wafer slippage.
  • polishing pad having a reduced stress window for robust end-point detection or measurement during CMP over a wide range of wavelengths.
  • a chemical mechanical polishing pad comprising: a window formed in the polishing pad, the window having a void provided on a side thereof and a pressure relief channel provided in the polishing pad from the void to a periphery of the polishing pad.
  • a chemical mechanical polishing pad comprising: a polishing layer having a window formed therein, the window being exposed to a void on a side thereof and a pressure relief channel provided in the polishing layer from a portion of the void exposed side of the window to a periphery of the polishing layer.
  • a chemical mechanical polishing pad comprising: a polishing layer overlying a bottom layer, and an adhesive layer disposed between the polishing layer and the bottom layer; a window formed in the polishing layer, the window being exposed to a void on a side thereof; and a pressure relief channel provided in the adhesive layer from the void to a periphery of the adhesive layer.
  • a chemical mechanical polishing pad comprising: a polishing layer overlying a bottom layer, and an adhesive layer disposed between the polishing layer and the bottom layer; a window formed in the polishing layer, the window being exposed to a void on a side thereof; and a pressure relief channel provided in the bottom layer from the void to a periphery of the bottom layer.
  • FIG. 1 illustrates a polishing pad having a pressure relief channel of the present invention
  • FIG. 2A illustrates a sectional view along line I-II of the polishing pad of FIG. 1 ;
  • FIG. 2B illustrates another embodiment of a sectional view along line I-II of the polishing pad of FIG. 1 ;
  • FIG. 3 illustrates another embodiment of a polishing pad having a pressure relief channel of the present invention
  • FIG. 4 illustrates another embodiment of a polishing pad having a pressure relief channel of the present invention.
  • FIG. 5 illustrates a CMP system utilizing the polishing pad of the present invention.
  • Polishing pad 1 comprises a polishing layer 4 and an optional bottom layer 2 .
  • polishing layer 4 and bottom layer 2 may individually serve as a polishing pad.
  • the present invention may be utilized in the polishing layer 4 alone, or in the polishing layer 4 in conjunction with the bottom layer 2 , as a polishing pad.
  • the bottom layer 2 may be made of felted polyurethane, such as SUBA-IVTM pad manufactured by Rohm and Haas Electronic Materials CMP Inc. (“RHEM”), of Newark, Del.
  • the polishing layer 4 may comprise a polyurethane pad (e.g., a pad filled with microspheres), such as, IC 1000TM pad by RHEM. Polishing layer 4 may optionally be texturized as desired. A thin layer of pressure sensitive adhesive 6 may hold the polishing layer 4 and the bottom layer 2 together.
  • the adhesive 6 may be commercially available from 3M Innovative Properties Company of St. Paul, Minn.
  • Polishing layer 4 has a transparent window 14 provided over the bottom layer 2 and the pressure sensitive adhesive 6 .
  • Polishing layer 4 may have a thickness T between 0.70 mm to 2.65 mm.
  • window 14 is provided over the void 10 that creates a pathway for the signal light utilized during end-point detection. Accordingly, laser light from a laser spectrophotometer (not shown) may be directed through the void 10 and transparent window block 14 , and onto a wafer or substrate to facilitate end-point detection.
  • a laser spectrophotometer not shown
  • the present invention is described with reference to a polishing pad having an integrally formed window, the invention is not so limited.
  • the entire polishing layer 4 may be transparent (“clear pad”) and the void, including pressure, may be created at any point where, for example, the laser spectrophotometer is placed.
  • the present invention is applicable to a window-less pad.
  • the polishing layer 4 may be suitably adapted to accommodate other end-point detection methods, for example, measuring the resistance across a polishing surface of the wafer.
  • polishing pad 1 comprises a pressure relief channel 11 having an inlet 11 a and an outlet 11 b .
  • the pressure relief channel 11 extends from a portion of the window 14 , on side 14 a that is exposed to the pressure created in void 10 , to a periphery 4 a of the polishing pad 1 , in particular, a periphery 4 a of the polishing layer 4 .
  • pressure that is generated in the void 10 during the polishing operation may be evacuated through inlet 11 a and outlet 11 b of pressure relief channel 11 .
  • any pressure that is generated in void 10 does not materially affect the transparent window 14 since the pressure escapes through the pressure relief channel 11 .
  • the transparent window 14 is not stressed or deformed due to the pressure build-up and accurate end-pointing is facilitated.
  • the invention is described here as having a single pressure relief channel, the invention is not so limited. For example, there may be more than one pressure relief channel provided in the polishing layer 4 . Alternatively, a single or multiple pressure relief channels may be provided in each of the separate layers (i.e., the adhesive layer and the bottom layer) or any combinations thereof without departing from the scope of the invention.
  • the invention is described as having a pressure relief channel that extends to the periphery of the polishing pad, the invention is equally applicable to a polishing pad having a pressure relief channel that extends from the void 10 to the polishing surface of the polishing layer 4 . However, particular care must be taken to prevent slurry flow into the channel, for example, by utilizing the capillary action of the pressure relied channel.
  • the pressure relief channel 11 may be formed by, for example, milling the channel utilizing a computer-numerically controlled tool (“cnc tool”), laser cutting, knife cutting, pre-molding the pad with the channel in place or melting/burning the channel into the pad.
  • cnc tool computer-numerically controlled tool
  • the pressure relief channel 11 is formed by milling or laser cutting the channel.
  • the pressure relief channel 11 has a semi-circular profile. Note, however, that the particular shape of the profile of the pressure relief channel 11 may be varied without departing from the scope of the invention. For example, the profile of the pressure relief channel 11 may be semi-square or semi-rectangular.
  • the pressure relief channel 11 has a predetermined width W and depth D. Preferably, the width W is between 0.70 mm to 6.50 mm. More preferably, the width W is between 0.80 mm to 4.00 mm. Most preferably, the width W is between 0.85 mm to 3.50 mm.
  • the pressure relief channel 11 preferably has a depth D between 0.38 mm to 1.53 mm. More preferably, the depth D is between 0.50 mm to 1.27 mm. Most preferably, the depth D is between 0.55 mm to 0.90 mm.
  • the width W and depth D may be varied along the length of the pressure relief channel 11 to facilitate pressure evacuation. For example, the width W may be narrower near the window 14 as compared to the periphery 4 a , creating a capillary action to prevent slurry contamination.
  • FIG. 2B an alternative embodiment of the pressure relief channel 11 of the present invention is provided. Similar features as in FIG. 2A are denoted by the same numerals.
  • the profile of the pressure relief channel 11 is semi-rectangular.
  • the pressure relief channel 11 has a predetermined width W and depth D.
  • the width W and depth D may be varied along the length of the pressure relief channel 11 to facilitate pressure evacuation.
  • a polishing pad 3 is provided comprising a pressure relief channel 31 , having an inlet 31 a and an outlet 31 b , formed in the adhesive 6 .
  • the pressure relief channel 31 extends from the void 10 , to a periphery 6 a of the polishing pad 3 . More particularly, the pressure relief channel 31 extends from the void 10 , to a periphery 6 a of the adhesive 6 .
  • pressure that is generated in the void 10 during the polishing operation may be evacuated through inlet 31 a and outlet 31 b of pressure relief channel 31 .
  • any pressure that is generated in void 10 does not materially affect the transparent window 14 since the pressure escapes through the pressure relief channel 31 . Therefore, the transparent window 14 is not stressed or deformed due to the pressure build-up and accurate end-pointing is facilitated, including reduced defectivity and wafer slippage.
  • a polishing pad 5 is provided comprising a pressure relief channel 51 , having an inlet 51 a and an outlet 51 b , formed in the adhesive 6 .
  • the pressure relief channel 51 extends from the void 10 , to a periphery 2 a of the polishing pad 5 . More particularly, the pressure relief channel 51 extends from the void 10 , to a periphery 2 a of the bottom layer 2 .
  • pressure that is generated in the void 10 during the polishing operation may be evacuated through inlet 51 a and outlet 51 b of pressure relief channel 51 .
  • any pressure that is generated in void 10 does not materially affect the transparent window 14 since the pressure escapes through the pressure relief channel 51 . Therefore, the transparent window 14 is not stressed or deformed due to the pressure build-up and accurate end-pointing is facilitated.
  • the present invention provides a chemical mechanical polishing pad having reduced stress windows.
  • a chemical mechanical polishing pad comprising, a window formed in the polishing pad, the window having a void provided on a side thereof.
  • the polishing pad further comprises a pressure relief channel provided from the void to a periphery of the polishing pad to relieve undue stress on the window.
  • the pressure relief channel may be formed in the adhesive layer or the bottom layer.
  • one or more pressure relief channels may be formed in the polishing layer, adhesive layer and the bottom layer together or any combination thereof.
  • the transparent material of window 14 is made from a polyisocyanate-containing material (“prepolymer”).
  • the prepolymer is a reaction product of a polyisocyanate (e.g., diisocyanate) and a hydroxyl-containing material.
  • the polyisocyanate may be aliphatic or aromatic.
  • the prepolymer is then cured with a curing agent.
  • Preferred polyisocyanates include, but are not limited to, methlene bis 4,4′ cyclohexylisocyanate, cyclohexyl diisocyanate, isophorone diisocyanate, hexamethylene diisocyanate, propylene-1,2-diisocyanate, tetramethylene-1,4-diisocyanate, 1,6-hexamethylene-diisocyanate, dodecane-1,12-diisocyanate, cyclobutane-1,3-diisocyanate, cyclohexane-1,3-diisocyanate, cyclohexane-1,4-diisocyanate, 1-isocyanato-3,3,5-trimethyl-5-isocyanatomethylcyclohexane, methyl cyclohexylene diisocyanate, triisocyanate of hexamethylene diisocyanate, triisocyanate of 2,4,4-trimethyl-1
  • the hydroxyl-containing material is a polyol.
  • exemplary polyols include, but are not limited to, polyether polyols, hydroxy-terminated polybutadiene (including partially/fully hydrogenated derivatives), polyester polyols, polycaprolactone polyols, polycarbonate polyols, and mixtures thereof.
  • the polyol includes polyether polyol.
  • examples include, but are not limited to, polytetramethylene ether glycol (“PTMEG”), polyethylene propylene glycol, polyoxypropylene glycol, and mixtures thereof.
  • the hydrocarbon chain can have saturated or unsaturated bonds and substituted or unsubstituted aromatic and cyclic groups.
  • the polyol of the present invention includes PTMEG.
  • Suitable polyester polyols include, but are not limited to, polyethylene adipate glycol, polybutylene adipate glycol, polyethylene propylene adipate glycol, o-phthalate-1,6-hexanediol, poly(hexamethylene adipate) glycol, and mixtures thereof.
  • the hydrocarbon chain can have saturated or unsaturated bonds, or substituted or unsubstituted aromatic and cyclic groups.
  • Suitable polycaprolactone polyols include, but are not limited to, 1,6-hexanediol-initiated polycaprolactone, diethylene glycol initiated polycaprolactone, trimethylol propane initiated polycaprolactone, neopentyl glycol initiated polycaprolactone, 1,4-butanediol-initiated polycaprolactone, PTMEG-initiated polycaprolactone, and mixtures thereof.
  • the hydrocarbon chain can have saturated or unsaturated bonds, or substituted or unsubstituted aromatic and cyclic groups.
  • Suitable polycarbonates include, but are not limited to, polyphthalate carbonate and poly(hexamethylene carbonate) glycol.
  • the curing agent is a polydiamine.
  • Preferred polydiamines include, but are not limited to, diethyl toluene diamine (“DETDA”), 3,5-dimethylthio-2,4-toluenediamine and isomers thereof, 3,5-diethyltoluene-2,4-diamine and isomers thereof, such as 3,5-diethyltoluene-2,6-diamine, 4,4′-bis-(sec-butylamino)-diphenylmethane, 1,4-bis-(sec-butylamino)-benzene, 4,4′-methylene-bis-(2-chloroaniline), 4,4′-methylene-bis-(3-chloro-2,6-diethylaniline) (“MCDEA”), polytetramethyleneoxide-di-p-aminobenzoate, N,N′-dialkyldiamino diphenyl methane, p,p′-m
  • Suitable diol, triol, and tetraol groups include ethylene glycol, diethylene glycol, polyethylene glycol, propylene glycol, polypropylene glycol, lower molecular weight polytetramethylene ether glycol, 1,3-bis(2-hydroxyethoxy) benzene, 1,3-bis-[2-(2-hydroxyethoxy) ethoxy]benzene, 1,3-bis- ⁇ 2-[2-(2-hydroxyethoxy) ethoxy]ethoxy ⁇ benzene, 1,4-butanediol, 1,5-pentanediol, 1,6-hexanediol, resorcinol-di-(beta-hydroxyethyl) ether, hydroquinone-di-(beta-hydroxyethyl)ether
  • Preferred hydroxy-terminated curatives include 1,3-bis(2-hydroxyethoxy) benzene, 1,3-bis-[2-(2-hydroxyethoxy) ethoxy]benzene, 1,3-bis- ⁇ 2-[2-(2-hydroxyethoxy) ethoxy]ethoxy ⁇ benzene, 1,4-butanediol, and mixtures thereof.
  • Both the hydroxy-terminated and amine curatives can include one or more saturated, unsaturated, aromatic, and cyclic groups. Additionally, the hydroxy-terminated and amine curatives can include one or more halogen groups.
  • the polyurethane composition can be formed with a blend or mixture of curing agents. If desired, however, the polyurethane composition may be formed with a single curing agent.
  • window 14 may be formed of, for example, polyurethanes, both thermoset and thermoplastic, polycarbonates, polyesters, silicones, polyimides and polysulfone.
  • Example materials for window 14 include, but are not limited to, polyvinyl chloride, polyacrylonitrile, polymethylmethacrylate, polyvinylidene fluoride, polyethylene terephthalate, polyetheretherketone, polyetherketone, polyetherimide, ethylvinyl acetate, polyvinyl butyrate, polyvinyl acetate, acrylonitrile butadiene styrene, fluorinated ethylene propylene and perfluoralkoxy polymers.
  • a CMP apparatus 20 utilizing the polishing pad of the present invention, including the pressure relief channel (not shown) is provided.
  • Apparatus 20 includes a wafer carrier 22 for holding or pressing the semiconductor wafer 24 against the polishing platen 26 .
  • the polishing platen 26 is provided with pad 1 , including window 14 and pressure relief channel 11 , of the present invention.
  • pad 1 has a bottom layer 2 that interfaces with the surface of the platen 26 , and a polishing layer 4 that is used in conjunction with a chemical polishing slurry to polish the wafer 24 .
  • any means for providing a polishing fluid or slurry can be utilized with the present apparatus.
  • the platen 26 is usually rotated about its central axis 27 .
  • the wafer carrier 22 is usually rotated about its central axis 28 , and translated across the surface of the platen 26 via a translation arm 30 .
  • CMP apparatuses may have more than one spaced circumferentially around the polishing platen.
  • a transparent hole 32 is provided in the platen 26 and overlies the void 10 and the window 14 of pad 1 . Accordingly, transparent hole 32 provides access to the surface of the wafer 24 , via window 14 , during polishing of the wafer 24 for accurate end-point detection.
  • a laser spectrophotometer 34 is provided below the platen 26 that projects a laser beam 36 to pass and return through the transparent hole 32 and high transmission window 14 for accurate end-point detection during polishing of the wafer 24 .
  • the present invention provides a chemical mechanical polishing pad having reduced stress windows.
  • a chemical mechanical polishing pad comprising, a window formed in the polishing pad, the window having a void provided on a side thereof.
  • the polishing pad further comprises a pressure relief channel provided from the void to a periphery of the polishing pad to relieve undue stress on the window.
  • the pressure relief channel may be formed in the adhesive layer or the bottom layer.
  • one or more pressure relief channels may be formed in the polishing layer, adhesive layer and the bottom layer together or any combination thereof.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
US10/869,657 2004-06-16 2004-06-16 Polishing pad having a pressure relief channel Expired - Fee Related US7252871B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US10/869,657 US7252871B2 (en) 2004-06-16 2004-06-16 Polishing pad having a pressure relief channel
TW094116736A TW200602156A (en) 2004-06-16 2005-05-23 Polishing pad having a pressure relief channel
CNB2005100779492A CN100388431C (zh) 2004-06-16 2005-06-15 具有减压通道的抛光垫座
KR1020050051542A KR20060048382A (ko) 2004-06-16 2005-06-15 압력 경감 채널을 갖는 연마 패드
JP2005175893A JP4761846B2 (ja) 2004-06-16 2005-06-16 圧力逃がし通路を有する研磨パッド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/869,657 US7252871B2 (en) 2004-06-16 2004-06-16 Polishing pad having a pressure relief channel

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US20050281983A1 US20050281983A1 (en) 2005-12-22
US7252871B2 true US7252871B2 (en) 2007-08-07

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US (1) US7252871B2 (ja)
JP (1) JP4761846B2 (ja)
KR (1) KR20060048382A (ja)
CN (1) CN100388431C (ja)
TW (1) TW200602156A (ja)

Cited By (24)

* Cited by examiner, † Cited by third party
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US7455571B1 (en) * 2007-06-20 2008-11-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Window polishing pad
US20090258588A1 (en) * 2008-04-11 2009-10-15 Innopad, Inc. Chemical Mechanical Planarization Pad With Void Network
US20130012107A1 (en) * 2010-03-25 2013-01-10 Toyo Tire & Rubber Co., Ltd. Laminate polishing pad
US9017140B2 (en) 2010-01-13 2015-04-28 Nexplanar Corporation CMP pad with local area transparency
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10384330B2 (en) 2014-10-17 2019-08-20 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US10596763B2 (en) 2017-04-21 2020-03-24 Applied Materials, Inc. Additive manufacturing with array of energy sources
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
US11123215B2 (en) 2016-08-16 2021-09-21 Renuka Pradhan Pressure relief apparatus for wound
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11524384B2 (en) 2017-08-07 2022-12-13 Applied Materials, Inc. Abrasive delivery polishing pads and manufacturing methods thereof
US11685014B2 (en) 2018-09-04 2023-06-27 Applied Materials, Inc. Formulations for advanced polishing pads
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JP2006005358A (ja) 2006-01-05
JP4761846B2 (ja) 2011-08-31

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