US7005314B2 - Sacrificial layer technique to make gaps in MEMS applications - Google Patents

Sacrificial layer technique to make gaps in MEMS applications Download PDF

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US7005314B2
US7005314B2 US09/894,334 US89433401A US7005314B2 US 7005314 B2 US7005314 B2 US 7005314B2 US 89433401 A US89433401 A US 89433401A US 7005314 B2 US7005314 B2 US 7005314B2
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sacrificial material
substrate
structures
structural material
sacrificial
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US20030006468A1 (en
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Qing Ma
Peng Cheng
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Intel Corp
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Intel Corp
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Priority to TW091111864A priority patent/TWI224077B/zh
Priority to PCT/US2002/020764 priority patent/WO2003002450A2/en
Priority to CNB028131916A priority patent/CN1304272C/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00126—Static structures not provided for in groups B81C1/00031 - B81C1/00119
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108

Definitions

  • the invention relates to microelectromechanical structures (MEMS).
  • Communication systems generally require partitioning of the electromagnetic frequency spectrum.
  • Communication transceiver devices therefore must be capable of high frequency selectivity, i.e., capable of selecting a given frequency band while rejecting all others.
  • Frequency-selective devices such as filters, oscillators and mixers are therefore some of the most important components within a transceiver and the quality of the devices generally dictates the overall architecture of a given transceiver.
  • passive components are used as part of the frequency-selective devices. Such passive components are typically implemented at the board level and therefore impede the ultimate miniaturization of portable transceivers.
  • Micromachining technologies have been applied to the miniaturization and integration of frequency-selective devices to bring such devices to the chip level.
  • Polycrystalline silicon-based device structures represent one specific micromachining technology.
  • High frequency (HF) and very high frequency (VHF) vibrating micromechanical resonators for example, for use in bandpass filters and reference oscillators have been formed through a sequence of integrated circuit-compatible film deposition and patterning.
  • HF high frequency
  • VHF very high frequency
  • To form small gaps such as, for example, when fabricating a vibratable resonator, traditional integrated circuit lithography and etch processes may be employed. Such processes typically include depositing and patterning polycrystalline silicon, structural material, the patterning defining gap between device structures through photolithographic means.
  • FIG. 1 shows a top perspective schematic view of an embodiment of a resonator structure.
  • FIG. 2 shows a schematic cross-sectional side view of a portion of a substrate having a first structural material formed thereon in connection with a first example of a method of forming a microelectromechanical structure.
  • FIG. 3 shows the structure of FIG. 2 after patterning the first structural material.
  • FIG. 4 shows the structure of FIG. 3 after conformally introducing a sacrificial layer over the structure.
  • FIG. 5 shows the structure of FIG. 4 after patterning the sacrificial material.
  • FIG. 6 shows the structure of FIG. 5 after introducing a second structural material over the substrate.
  • FIG. 7 shows the structure of FIG. 6 after planarizing a surface of the structure.
  • FIG. 8 shows the structure of FIG. 7 after removing the sacrificial layer.
  • FIG. 9 shows the structure of FIG. 7 after introducing a wide gap according to a second embodiment of the first example.
  • FIG. 10 shows the structure of FIG. 9 after removing the sacrificial layer.
  • FIG. 11 shows a schematic cross-sectional side view of a portion of a substrate having a sacrificial layer introduced thereon in connection with a second example of forming a microelectromechanical structure.
  • FIG. 12 shows the structure of FIG. 11 after patterning the sacrificial material.
  • FIG. 13 shows the structure of FIG. 12 after introducing a first structural material over the substrate.
  • FIG. 14 shows the structure of FIG. 13 after patterning the first structural material.
  • FIG. 15 shows the structure of FIG. 14 after introducing a second sacrificial material over the substrate.
  • FIG. 16 shows the structure of FIG. 15 after patterning the second sacrificial material.
  • FIG. 17 shows the structure of FIG. 16 after introducing a second structural material over the substrate.
  • FIG. 18 shows the structure of FIG. 17 after planarizing a surface of the structure.
  • FIG. 19 shows the structure of FIG. 18 after removing the first and second sacrificial materials.
  • FIG. 20 shows the structure of FIG. 18 after introducing a wide gap according to a second embodiment of forming the structure according to the second example.
  • FIG. 21 shows the structure of FIG. 20 after removing the first and second sacrificial materials.
  • FIG. 22 shows a schematic cross-sectional side view of a portion of a substrate having a first structural material formed thereon according to a third example of forming a microelectromechanical structure.
  • FIG. 23 shows the structure of FIG. 22 after patterning the first structural material.
  • FIG. 24 shows the structure of FIG. 23 after conformally introducing a first sacrificial material over the structure.
  • FIG. 25 shows the structure of FIG. 24 after patterning the first structural material.
  • FIG. 26 shows the structure of FIG. 25 after conformally introducing a second sacrificial material over the structure.
  • FIG. 27 shows the structure of FIG. 26 after patterning the second sacrificial material.
  • FIG. 28 shows the structure of FIG. 27 after the introducing a second structural material over the structure.
  • FIG. 29 shows the structure of FIG. 28 after planarizing a surface of the structure.
  • FIG. 30 shows the structure of FIG. 29 after removing the first and second sacrificial materials.
  • FIG. 31 shows the structure of FIG. 28 after introducing a wide gap according to a second embodiment of the third example.
  • FIG. 32 shows the structure of FIG. 31 after removing the first and second sacrificial materials.
  • the method includes, over an area of a substrate, forming a plurality of three-dimensional first structures. Following the formation of the first structures, the method also includes conformally introducing a sacrificial material over the substrate. A second structural material is then introduced over the sacrificial material followed by the removal of the sacrificial material.
  • the conformal introduction (e.g., deposition) and removal of sacrificial material may be used to form narrow gaps (e.g., on the order of the thickness of the introduced sacrificial material).
  • the method is suitable, in one context, for making microelectromechanical structures (MEMS).
  • the gaps may be formed by deposition and removal of sacrificial material without photolithography steps. Therefore, the concerns associated with photolithographically-formed gaps (e.g., continued miniaturization, gap symmetry, CD variation, and gap uniformity) may be reduced.
  • the apparatus includes a first structure and a second structure formed on a substrate.
  • the second structure is separated from the first structure by an unfilled gap defined by the thickness of a removed film.
  • the apparatus describes a further miniaturization effort of, for example, frequency-selective devices.
  • FIG. 1 schematically illustrates a resonator that is used, for example, in a bandpass micromechanical filter.
  • Filter 100 is an example of a typical frequency-selective device for which, in terms of mechanical chip-based structures, very small (narrow), uniform and consistent gaps are desired.
  • filter 100 includes beam micromechanical resonator 110 .
  • Resonator 110 is coupled at anchors 125 A and 125 B but is otherwise free-standing.
  • Resonator 110 vibrates parallel to the substrate on which it is formed. The vibrations parallel to the substrate are induced by a lateral gap capacitive transducer.
  • the capacitive transducer is formed by disposing input electrode 140 adjacent resonator 110 with, in this case, gap 145 between input electrode 140 and resonator 110 .
  • Output electrode 150 is disposed adjacent resonator 110 with gap 155 between output electrode 150 and resonator 110 .
  • Filter 100 representatively operates in the following manner.
  • An electrical input signal is applied at input electrode 140 and converted to an input force by, in this case, an electromechanical transducer (e.g., an electrical field generating the input force).
  • the electromechanical transducer induces mechanical vibration of free-standing resonator 110 in a z-direction.
  • the mechanical vibration comprises a mechanical signal. If the vibration of resonator 110 is within the passband, the mechanical signal is passed. If the vibration of input resonator 110 is outside the passband of the filter, the mechanical signal is rejected.
  • a passed mechanical signal at resonator 110 is reconverted to electrical energy at an output transducer at output electrode 150 for processing by, for example, subsequent transceiver stages.
  • the capacitive transduction to convert an electrical signal to a mechanical signal (at input electrode 140 ) and convert a mechanical signal to an electrical signal (at output electrode 150 ) is produced in part by gaps 145 and 155 , respectively, between the electrodes and resonator 110 .
  • the movement of resonator 110 is directly proportional to the input voltage supplied.
  • one objective is to decrease the input voltage. Decreasing the input voltage generally demands that gap 145 between electrode 140 and resonator 110 be decreased because the force, F, required to cause mechanical movement (e.g., vibration) of resonator 110 is inversely proportional to the gap size for a given voltage: F ⁇ 1 gap ⁇ ⁇ size .
  • the typical technique to form vertical (zx-direction) gaps for MEMS-type on-chip structures is through photolithographic patterning and etching. Such technique is generally limited to forming gaps on the order of 0.1 microns ( ⁇ m). Even at this size, there may be an error or variation as high as 25 percent for a patterned gap which can degrade device performance.
  • FIGS. 2–8 illustrate a first embodiment of one example of forming vertical (z-direction) and horizontal (y-direction) gaps between structures on a substrate.
  • structure 200 presents a portion of a substrate having structural material introduced thereon.
  • Substrate 210 is, for example, a semiconductor substrate such as a silicon substrate suitable as a base structure for MEMS applications. It is appreciated that other substrates, such as glass (including silicon on insulator) and ceramic substrates may be suitable.
  • Substrate 210 may have contact points (pads, terminals) disposed on surface 215 to which device structures (e.g., electrodes, interconnects, etc.) may be formed.
  • device structures e.g., electrodes, interconnects, etc.
  • substrate 210 may also have conductive traces disposed throughout its body, coupling contact points on the substrate or to another substrate.
  • Substrate 210 may also have one or more device levels, including one or more interconnect levels formed thereon over which structures as described below are formed.
  • first structural material 220 is polycrystalline silicon (polysilicon) deposited, for example, by chemical vapor deposition (CVD).
  • a suitable thickness for structure material 220 is a thickness corresponding to a vertical (z-direction) dimension of a desired MEMS.
  • suitable thickness for first structural material according to current technologies is on the order of 0.5 to 2 microns ( ⁇ m).
  • FIG. 3 shows the structure of FIG. 2 after patterning first structural material into a plurality of discrete structural material portions 220 A, 220 B, and 220 C.
  • patterning may be accomplished, for example, through photolithographic techniques (e.g., masking, etching, etc.).
  • FIG. 4 shows the structure of FIG. 3 after the conformal introduction of sacrificial material 230 over the surface of the substrate, including over patterned first structural material portions 220 A, 220 B, and 220 C.
  • sacrificial material 230 is an oxide, such as silicon dioxide.
  • the introduction may be by way of deposition (CVD) or thermal growth.
  • the introduction of structural material represents, in this example, an introduction to a thickness desired for vertical (z-direction) and horizontal (y-direction) gap dimensions. Suitable thicknesses may be on the order of 50 to 2000 angstroms ( ⁇ ).
  • FIG. 5 shows the structure of FIG. 4 following patterning of sacrificial material 230 into sacrificial material portions 230 A, 230 B, and 230 C.
  • Each sacrificial material portion in this example, has a vertical (z-direction) and a horizontal (y-direction) component corresponding to the vertical and horizontal features of first structural material portions 220 A, 220 B, and 220 C.
  • sacrificial material 230 will be used to form vertical and horizontal gaps where desired, for example, in the fabrication of one or more MEMS. Accordingly, the patterning of sacrificial material 230 is based, in part, where it is desired for such gaps to be located on the substrate.
  • FIG. 6 shows the structure of FIG. 5 following the introduction of second structural material 240 .
  • second structural material 240 is similar to first structural material 220 (e.g., polysilicon).
  • Second structural material is introduced (e.g., deposited (CVD)) to a thickness sufficient to blanket the structure including horizontally disposed components of sacrificial material portion 230 A and sacrificial material portion 230 B.
  • FIG. 7 shows the structure of FIG. 6 following the planarization of the structure.
  • the planarization removes sufficient material, e.g., second structural material 240 , horizontally-disposed sacrificial material 230 , and first structural material 220 to define a vertical (z-direction) dimension for one or more MEMS.
  • first structural material 220 is introduced to a thickness corresponding to the thickness of desired device structures, the planarization of the material layers over structure 210 proceeds to first structural material 220 (e.g., the surface of first structural material 220 serving as a stopping point). As illustrated in FIG.
  • Second structural material 240 is represented in FIG. 7 as second structural material portions 240 A, 240 B, and 240 C.
  • FIG. 8 shows the structure of FIG. 7 following the removal of sacrificial material 230 .
  • a sacrificial material of SiO 2 one way sacrificial material 230 is removed is by exposing structure 200 to an acidic solution, such as a solution of hydrofluoric (HF) acid.
  • the removal of sacrificial material 230 forms vertical (z-direction) gaps between device structures of first structural material 220 and second structural material 240 (e.g., gap 250 A between first structural material portion 220 A and second material portion 240 A; gap 250 B between second structural material portion 240 A and first structural material portion 220 B; and gap 250 C between second structural material portion 240 B and first structural material portion 220 C).
  • the removal of sacrificial material 230 also forms horizontal (y-direction) gaps between the structural material and substrate 210 (e.g., gap 260 A between second structural material portion 240 A and substrate 210 ; gap 260 B between second structural material portion 240 B and substrate 210 ; and gap 260 C between second structural material portion 240 C and substrate 210 ).
  • portion 265 is, for example, a portion of a resonator structure, the resonator beam formed of second structural material portion 240 A separated from adjacent structural material by vertical (z-direction) gaps 250 A and 250 B and separated from substrate 210 by horizontal gap 260 A.
  • vertical gap width, W v , of gaps 250 A and 250 B is equivalent to the height of horizontal gap 260 A, W h , because the gaps are defined by the thickness of the conformally introduced sacrificial layer. It is appreciated that the width of the gaps is equivalent to the thickness of sacrificial material 230 .
  • Structures 220 A and 220 B may be coupled or formed on contact points on substrate 210 . To act as electrodes, for example, it may be desired to further modify structures 220 A and 220 B to, for example, decrease the resistivity of the structural material, for example, by introducing a metal to form a silicide of silicon-based structures.
  • FIG. 9 shows the structure of FIG. 7 , according to an alternative embodiment of this example, where gap 280 is patterned in the structure by, for example, photolithographic and etch techniques known in the art.
  • FIG. 10 shows the structure of FIG. 9 after the removal of sacrificial material 230 .
  • the resulting structure includes vertical gaps 250 A and 250 B and horizontal gaps 260 A, 260 B, and 260 C defined by the thickness of sacrificial material 230 (vertical gap width, horizontal gap height).
  • FIG. 10 also shows structure with a wider gap 280 formed by photolithographic means.
  • the above embodiments present a technique of forming structural devices on a substrate suitable, in one instance as structural devices in MEMS applications including, but not limited to, frequency selective devices (e.g., filters, oscillators, etc.).
  • sacrificial layer(s) or film(s) are used to form gaps between structures and/or between structures and the substrate.
  • the spacing between the structures and/or between structures and the substrate may be minimized, with the spacing determined by the thickness of the sacrificial material layer or film.
  • the gaps are defined by sacrificial layer or film removal more uniform gap dimensions may be obtained even for narrow (e.g., on the order of 0.1 ⁇ m or less) gaps.
  • FIGS. 11–18 illustrate one embodiment of a second example of forming structures on a substrate, the structures suitable, in one aspect, for MEMS applications.
  • a technique for forming vertical (z-direction) and horizontal (y-direction) gaps is described where the vertical gap width is less than the horizontal gap height.
  • FIG. 11 shows structure 300 including substrate 310 of, for example, a semiconductor material.
  • substrate 310 may have contact points (pads, terminals) disposed on surface 315 to which device structures may be formed, as well as conductive traces disposed throughout its body.
  • Substrate 310 may also have one or more device levels, including interconnect levels, formed thereon.
  • sacrificial material 320 is an oxide, such as silicon dioxide (SiO 2 ).
  • SiO 2 silicon dioxide
  • sacrificial material 320 of SiO 2 may be introduced either by deposition (e.g., CVD) or thermal growth.
  • Sacrificial material 320 will serve, in this example, to define a portion (less than the entire portion) of a horizontal (y-direction) gap for the structures formed on the substrate. Accordingly, sacrificial material 320 is introduced to a thickness on the order of one to several or more microns, depending on the desired thickness of the ultimate horizontal gap and the contribution to that gap attributable to sacrificial material 320 .
  • FIG. 12 shows the structure of FIG. 11 after patterning sacrificial material 320 into portions 320 A, 320 B, and 320 C on substrate 310 .
  • the dimensions of sacrificial material portions 320 A, 320 B, and 320 C allow for, in this example, the introduction of structural material to the substrate (e.g., to form the anchors of a resonator).
  • Patterning of sacrificial material 320 may be accomplished through photolithographic techniques (mask and etching) as known in the art.
  • FIG. 13 shows the structure of FIG. 12 after the introduction of first structural material 330 over the substrate.
  • First structural material 330 is introduced conformally and as a blanket layer over the surface of substrate 310 including over sacrificial material portion 320 A, 320 B, and 320 C.
  • first structure material 330 is polycrystalline semiconductor material (e.g., polysilicon) deposited (e.g., CVD) to at least a thickness desired for a vertical height of the structural material.
  • FIG. 14 shows the structure of FIG. 13 after the patterning of first structural material 330 into first structural material portions 330 A, 330 B, and 330 C.
  • patterning may be accomplished by photolithographic techniques (masking and etching) as known in the art to define first structures on substrate 310 .
  • FIG. 15 shows the structure of FIG. 14 after the introduction of second sacrificial material 340 over the substrate.
  • second sacrificial material 340 is introduced conformally over the surface of the structure, including over first structural material portions 330 A, 330 B, and 330 C as well as over first sacrificial material portions 320 A, 320 B, and 320 C.
  • the introduction of the sacrificial material may be by deposition (CVD) or thermal growth (where first structural material portions 330 A, 330 B, and 330 C are silicon and first sacrificial material portions 320 A, 320 B, and 320 C are also SiO 2 ).
  • the thickness of second sacrificial material 340 will be determined, in one instance, by the vertical gap dimension (width) desired between the ultimate structures. For MEMS applications, a thickness of second sacrificial material 340 will be on the order of one or several monolayers of SiO 2 .
  • FIG. 16 shows the structure of FIG. 15 following the patterning of sacrificial material 340 into second sacrificial material portions 340 A, 340 B, and 340 C.
  • Such patterning may be accomplished by photolithographic techniques (mask and etch).
  • FIG. 17 shows the structure of FIG. 16 after the introduction of second structural material 350 .
  • second structural material 350 is conformally deposited and blanketed over the surface of the structure, including over second sacrificial material portions 340 A, 340 B, and 340 C as well as over first structural material portions 330 A, 330 B, and 330 C.
  • Second structural material 350 may be similar to first structural material 330 , such as polysilicon.
  • FIG. 18 shows the structure of FIG. 17 following planarizing the structure surface.
  • the planarization may be accomplished by chemical-mechanical polishing (CMP) and is sufficient to remove enough second structural material 350 to remove horizontal portion of second sacrificial material 340 and define a vertical dimension for structures over the substrate (e.g., vertical dimensions for first structural material portions 330 A, 330 B, and 330 C as well as second structural material portions 350 A, 350 B, and 350 C).
  • CMP chemical-mechanical polishing
  • FIG. 19 shows the structure of FIG. 18 after the removal of second sacrificial material 340 and first sacrificial material 320 .
  • first sacrificial material 320 and second sacrificial material 340 are SiO 2
  • an acid such as hydrofluoric acid may be used to selectively remove the sacrificial material.
  • various device structures are retained on substrate 310 and are separated from one another, where desired, by vertical (z-direction) gaps.
  • first structural material portion 330 A is separated from the structure defined by second structural material portion 350 A by vertical gap 355 A; the structure defined by second structural material portion 350 A is separated from the structure defined by first structural material portion 330 B by vertical gap 355 B; and the structure defined by second structural material portion 350 B is separated from the structure defined by first structural material portion 330 C by gap 355 C.
  • the various device structures are separated from substrate 310 by horizontal (y-direction) gaps.
  • the structure defined by second structural material portion 350 A is separated from substrate 310 by gap 360 A; and the structure defined by second structural material portion 350 B is separated from substrate 310 by gap 360 B.
  • the vertical gap width, W v , and horizontal gap height, W h may be formed of different dimensions although each is defined by the thickness of the introduced (deposited) sacrificial layers or films.
  • the horizontal (y-direction) dimension gap formed on substrate 310 is defined, in this example, by two layers of sacrificial material, while the vertical (z-direction) gap is defined by the thickness of a single sacrificial layer. Accordingly, as illustrated in FIG. 19 , the vertical gap width, W v , is less than the horizontal gap height, W h , by an amount equal to the thickness of the first sacrificial material layer or film.
  • FIG. 20 shows the structure of FIG. 18 wherein photolithographically formed gap or opening 380 is formed in the structure. Such gap may be formed by photolithographic masking and etching techniques.
  • FIG. 21 shows the structure of FIG. 20 after removal of first sacrificial material 320 and second sacrificial material 340 as described above with reference to FIG. 19 and the accompanying text.
  • FIGS. 22–30 illustrate one embodiment of a third example of forming structures on a substrate, the structures suitable, in one aspect, for MEMS applications.
  • a technique for forming vertical (z-direction) and horizontal (y-direction) gaps is described where the vertical gap width is greater than the horizontal gap height.
  • FIG. 22 shows structure 400 including substrate 410 of, for example, a semiconductor material.
  • substrate 410 may have contact point (pads, terminals) disposed on surface 415 to which device structures may be formed, as well as conductive traces disposed throughout its body.
  • Substrate 410 may also have one or more device levels, including interconnect levels, formed thereon.
  • first structural material 420 is polysilicon introduced by CVD.
  • FIG. 23 shows the structure of FIG. 22 after patterning first structural material 420 into first structural portion 420 A, 420 B, and 420 C. Such patterning may be accomplished by photolithographic mask and etch.
  • FIG. 24 shows the structure of FIG. 23 after the conformal introduction of first sacrificial material 430 .
  • first sacrificial material 430 is an oxide, such as silicon dioxide (SiO 2 ).
  • first sacrificial material 430 of SiO 2 may be introduced either by deposition (e.g., CVD) or thermal growth.
  • First sacrificial material 430 in this example, defines a portion (less than the entire portion) of the vertical (z-direction) gaps for the structures formed on the substrate. Accordingly, first sacrificial material 430 is introduced to a thickness on the order of one to several or more monolayers, depending on the desired thickness of the ultimate vertical gaps and the contribution to those gaps attributable to first sacrificial material 430 .
  • FIG. 25 shows the structure of FIG. 24 after patterning first sacrificial material 430 into first sacrificial material portion 430 A, 430 B, 430 C, 430 D, and 430 E on substrate 310 .
  • the first sacrificial material portions conform to the side walls of first structural material portion 420 A, 420 B, and 420 C, respectively.
  • the patterning of first sacrificial material 430 may be accomplished by an anisotropic etch using an etchant favoring, for example, the removal of SiO 2 over polysilicon.
  • FIG. 26 shows the structure of FIG. 25 after the introduction of second sacrificial material 440 .
  • Second sacrificial material 440 is conformally introduced over structural material and first sacrificial material portion 430 A, 430 B, 430 C, 430 D, and 430 E and over first structural material portions 420 A, 420 B, and 420 C (e.g., conformally over the horizontal and vertical components).
  • second sacrificial material 440 is similar to first sacrificial material 430 .
  • second sacrificial material 440 may be introduced by deposition or thermal growth (where substrate 410 and first structural materials 420 A, 420 B, and 420 C are silicon).
  • FIG. 27 shows the structure of FIG. 26 following the patterning of second sacrificial material 440 into second sacrificial material portions 440 A and 440 B.
  • Such patterning may be accomplished by photolithographic techniques (masking and etching).
  • FIG. 28 shows the structure of FIG. 27 after the introduction of second structural material 450 .
  • second structural material 450 is introduced conformally and as a blanket over structure 400 , including over second sacrificial material portions 440 A and 440 B; first structural material portions 420 A, 420 B, and 420 C; and first sacrificial material portions 430 C and 430 E.
  • Second structural material 450 may be similar to first structural material 420 , such as polysilicon.
  • FIG. 29 shows the structure of FIG. 28 following planarizing of the structure surface.
  • the planarization may be accomplished by chemical-mechanical polishing (CMP) and is sufficient to remove enough second structural material 450 to remove horizontal portions of second sacrificial material portions 440 A and 440 B and define a vertical dimension for structures over the substrate (e.g., vertical dimensions for first structural material portions 420 A, 420 B, and 420 C).
  • CMP chemical-mechanical polishing
  • vertical components of second sacrificial material 440 A and 440 B are exposed at a surface of structure 400 as are first sacrificial material portions 430 A, 430 B, 430 C, 430 D, and 430 E.
  • the planarization further defines second structural material portions 440 A, 440 B, and 440 C.
  • FIG. 30 shows the structure of FIG. 29 after the removal of second sacrificial material 440 and first sacrificial material 430 .
  • first sacrificial material 430 and second sacrificial material 440 are silicon dioxide
  • an acid such as hydrofluoric (HF) acid may be used to selectively remove the sacrificial material.
  • HF hydrofluoric
  • first structural material portion 420 A is separated from the structure defined by second structural material portion 450 A by vertical gap 455 A; the structure defined by second structural material portion 450 A is separated form the structure defined by first structural material portion 420 B by vertical gap 455 B; and the structure defined by second structural material portion 450 B is separated from the structure defined by first structural material portion 420 C by vertical gap 455 C.
  • various device structures are separated from substrate 410 by horizontal (y-direction) gaps.
  • the structure defined by second structural material portion 450 A is separated from substrate 410 by gap 460 A; and the structure defined by second structural material portion 450 B is separated from substrate 410 by gap 460 B.
  • the vertical gap width, W v , and horizontal gap height, W h may be formed of different dimensions although each is defined by the thickness of the introduced (deposited) sacrificial layers or films.
  • the horizontal (z-direction) gap formed on substrate 410 is defined by, in this example, a single layer of sacrificial material, while the vertical (v-direction) gap is defined by a thickness of two layers of sacrificial material. Accordingly, as illustrated in FIG. 30 , the vertical gap width, W v , is greater than the horizontal gap height, W h , by an amount equal to the thickness of the first sacrificial material layer or film.
  • FIG. 31 shows the structure of FIG. 29 wherein a photolithographically-formed gap or opening 480 is formed in the structure. Such gap may be formed by conventional masking and etching techniques as known in the art.
  • FIG. 32 shows the structure of FIG. 31 after removal of first sacrificial material 430 and second sacrificial material 440 as described above with reference to FIG. 30 and the accompanying text.

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