US6947465B2 - Solid state laser - Google Patents

Solid state laser Download PDF

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Publication number
US6947465B2
US6947465B2 US10/606,513 US60651303A US6947465B2 US 6947465 B2 US6947465 B2 US 6947465B2 US 60651303 A US60651303 A US 60651303A US 6947465 B2 US6947465 B2 US 6947465B2
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solid state
state laser
laser medium
pumping light
pumping
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Expired - Fee Related, expires
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US10/606,513
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US20040076212A1 (en
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Hiroshi Nunokawa
Satoru Amano
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Orc Manufacturing Co Ltd
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Orc Manufacturing Co Ltd
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Assigned to ORC MANUFACTURING CO., LTD. reassignment ORC MANUFACTURING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AMANO, SATORU, NUNOKAWA, HIROSHI
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H01S3/0625—Coatings on surfaces other than the end-faces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/042—Arrangements for thermal management for solid state lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/061—Crystal lasers or glass lasers with elliptical or circular cross-section and elongated shape, e.g. rod
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094084—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators

Definitions

  • the present invention relates generally to a solid state laser, more specifically to a solid state laser pumped by a laser diode (abbreviated as LD below) as a pumping light source.
  • a solid state laser pumped by a laser diode (abbreviated as LD below) as a pumping light source.
  • LD laser diode
  • Such solid state laser is excellent in both pumping efficiency and pumping distribution as well as easy in aligning the crystal axis even in an anisotropic laser medium.
  • LD-pumped solid state lasers using a LD as a pumping light source attract considerable attention as compact, highly efficient and longer lifetime laser light sources as compared to lamp-pumped solid state lasers.
  • performance and quality of a LD have been improved significantly in recent years, thereby accelerating practical applications of such LD-pumped all solid state lasers.
  • Such all solid state semiconductor lasers extend lifetime to 10,000 hours as compared to 1,000 hours of conventional lamp-pumped semiconductor lasers.
  • the absorbing wavelength of the solid state laser medium and the oscillation wavelength of the LD are equal to each other in the LD-pumped solid state lasers, laser crystals can be pumped highly efficiently. High quantum efficiency helps to decrease thermal lens effect, thereby significantly improving the beam quality.
  • Nd:YAG crystals Widely known as the laser media to be utilized for industry-use solid state lasers are Nd:YAG crystals and Nd:YVO 4 crystals.
  • Nd:YAG crystals feature high mechanical strength and excellent thermal conductivity, but are not suitable for oscillation at high pulse repetition rate over 30 kHz because of longer fluorescent lifetime.
  • Nb:YAG crystals are easy to handle because they have no crystal axis characteristic, thereby exhibiting no dependence to the polarizing characteristic of the pumping light in pumping efficiency.
  • Nb:YVO 4 crystals are inferior to Nb:YAG crystals in mechanical strength and thermal conductivity but have shorter fluorescence lifetime and higher induced emission cross sectional area than Nb:YAG crystals, thereby making them more suitable material for oscillating at higher pulse repetition rate.
  • Nb:YVO 4 crystals have a single crystal axis, when used for laser oscillation, they not only oscillate in polarized in a particular orientation but also exhibit anisotropy in light absorbing characteristic. Since LDs tend to oscillate generally in polarized in a particular orientation as described hereinabove, the following Reference Patent 1 discloses that high pumping efficient can be achieved by choosing the orientation of polarization with respect to the crystallization.
  • the laser comprises a reflection layer 64 for enclosing the circumference of a cylindrical laser medium 61 along its optical axis and an opening 63 in a part of the reflection layer 64 for directing a pumping light 62 from a LD 60 into the laser medium 61 .
  • the reflection layer 64 covers almost the entire outer surface of the laser medium 61 except a small portion for directing the pumping light 62 from the LD 60 . In this way, the pumping light 62 from the LD 60 is entrapped inside the laser medium 61 for efficient absorption of the pumping light 62 in the laser medium 61 , thereby improving efficiency of oscillation energy.
  • the LD-pumped solid state laser comprises a reflection layer 74 covering the outer circumference of a rectangular rod shaped laser medium 71 along its optical axis and an opening 73 formed in a part of the reflection layer 74 for allowing a pumping light 72 from an LD 70 to enter the laser medium 71 .
  • Most of the outer surface of the laser medium 71 is covered by the reflection layer 74 except a small portion for receiving the pumping light 72 from the LD 70 .
  • the pumping light 72 from the LD 70 is entrapped inside the laser medium 71 for efficient absorption of the pumping light by the laser medium 71 , thereby improving efficiency of oscillation energy.
  • the use of rectangular Nd:YVO 4 crystal as the laser medium 74 enables to align the orientation of the optical electric field of the pumping light 72 in parallel with the c-axis of the Nd:YVO 4 crystal that is cut along the a-axis.
  • the solid state laser utilizes the particular feature of a laser medium 81 that exhibits a predetermined refractive index with respect to the pumping light.
  • the laser medium 81 is disposed adjacent to a source of pumping light 82 and the laser medium 81 has a convex surface portion 86 at the side toward the pumping light source, thereby reducing the diffusing angle of the pumping light 82 without using a focusing optical system.
  • the solid state laser as disclosed in the Reference Patent 4 and shown in FIG. 9 is a multiple coaxial construction comprising a solid state laser rod 1 , a gap for cooling medium 2 , a cooling tube 3 and a cylindrical member 4 for providing a reflection surface. Accordingly, any pumping light not absorbed by the solid state laser rod 1 passes through the gap for the cooling medium 2 and the cooling tube 3 for at least twice, thereby attenuating the pumping light and failing to effectively utilize the reflection light.
  • the reflection layer 64 is circular, the reflection light tends to be focused on a single point, thereby not uniformly pumping the laser medium 61 by the LD (See FIG. 10 ).
  • the dispersing angle of the pumping light 72 from the LD 70 tends to cause diffusion in pumping distribution that is weaker at the outer side of the laser medium 71 , thereby causing high dimension spatial mode.
  • the beam quality may be deteriorated as mentioned in the following Reference Patent 5. It is preferable that the laser medium is pumped by the pumping light in a parallel manner.
  • the laser medium 71 is rectangular which is easy to align the crystal axis, but the pumping light 72 from the LD 70 tends to largely diffuse in the laser medium 71 , thereby not uniformly pumping it.
  • the laser medium 81 is convex in one surface but flat in the opposite surface on which a mirror is disposed. As a result, a part of the pumping light 82 passes through the output mirror 84 , thereby not efficiently pumping the laser medium 81 . Additionally, no attention is paid to the relationship between the crystal axis of the laser medium 81 and the pumping light 82 .
  • the solid state laser according to the present invention is directed to one comprising a solid state laser medium, a pumping light source disposed at one side of the solid state laser medium for pumping the same and a reflection portion for recovering any pumping light from the pumping light source that is not absorbed by the solid state laser medium.
  • the solid state laser is characterized in that the solid state laser medium has the surface facing the pumping light source as a light incident surface formed in such a manner that the pumping light is in parallel in the solid state laser medium, and the surface facing the reflection portion is flat so as to return the reflected light from the reflection portion into the solid state laser medium in a parallel manner.
  • the diffusing pumping light from pumping light source is converted into parallel light inside the laser medium and any light not absorbed by the laser medium in a first pass is reflected back into the solid state laser medium, thereby improving both pumping efficiency and distribution. Also, it simplifies alignment of the crystal axis by making the flat surface of the solid state laser medium in contact with the reflection portion.
  • the solid state laser according to the present invention having the above construction exhibits various advantages. It is simple by not using any optical component, enables to pump the laser medium uniformly and in high density, and provides highly efficient and high beam quality laser oscillation. Additionally, in case of using anisotropic laser medium having different performances depending on the axial directions, the laser medium can be pumped efficiently because the laser medium can be aligned easily by using the flat surface facing the reflection portion.
  • FIG. 1 is a cross section view of the solid state laser cut in the plane perpendicular to the laser oscillation axis.
  • FIG. 2 is a perspective view of the laser medium to be used in the solid state laser according to the present invention.
  • FIG. 3 is a light tracing chart when the laser medium is pumped in the solid state laser according to the present invention.
  • FIG. 4 is a modified example of the solid state laser according to the present invention.
  • FIG. 5 is a further modified example of the solid state laser according to the present invention.
  • FIG. 6 is a cross section view of a conventional solid state laser cut in the plane perpendicular to the direction of the laser oscillation axis.
  • FIG. 7 is a cross section view of a conventional solid state laser using a rectangular laser medium cut in the plane perpendicular to direction of the laser oscillation axis.
  • FIG. 8 is a cross section view of a conventional solid state laser having a low diffusing angle of the pumping light without using focusing optical system cut in the plane perpendicular to the direction of the laser oscillation axis.
  • FIG. 9 is a cross section view of a conventional solid state laser with an improvement to effectively return the pumping light not absorbed by the solid state laser rod back thereto cut in the plane perpendicular to the direction of the laser oscillation axis.
  • FIG. 10 is a cross section view of a conventional solid state laser cut in the plane perpendicular to the direction of the laser oscillation axis to show the pumping condition of the laser medium.
  • FIG. 1 is a cross section view of the LD-pumped solid state laser according to an embodiment of the present invention (referred to as the embodied solid state laser below) in the plane perpendicular to the direction of laser oscillation axis.
  • FIG. 2 shows a perspective view of the laser medium to be used in the embodied solid state laser.
  • FIG. 3 shows a trace of pumping light when the embodied solid state laser is pumped.
  • the embodied solid state laser comprises a LD 10 , a laser medium 11 and a heat sink 15 comprising a first block 15 a , second block 15 b and a third block 15 c.
  • the LD 10 used as the pumping light source 12 is 40 watts in output, 40 degrees in total diffusing angle (half-amplitude-width) and 800 nm in wavelength. Note that 1064 nm thick Ar coating and optical polishing are made on the laser oscillation edge surface for reducing loss of laser oscillation.
  • the laser medium 11 is generally D-shaped in cross section in perpendicular to the direction of laser oscillation axis.
  • the surface facing the LD 10 that defines an incident surface A is arcuate, while the surface opposite to the incident surface A is flat. It can be said that the incident surface A is made convex similar to that of a convex lens.
  • the laser medium 11 is formed with a reflection layer 14 except the portion opposed to the LD 10 which is the pumping light source.
  • the reflection layer 14 on the flat portion constitutes a reflection surface B.
  • the laser medium 11 is a crystal, more concretely Nd:YVO 4 that is cut in the a-axis and doped with Nd of 0.5 at %. As shown in FIG.
  • the c-axis of the crystal of the laser medium 11 is parallel with the flat portion.
  • the laser medium 11 is a rod of 1.5 mm in diameter and 12 mm in length with a part of the side surface cut away in flat at the location 0.5 mm toward the center.
  • the laser medium 11 absorbs the pumping light 12 from the LD 10 for generating and amplifying the light having a predetermined wavelength.
  • Such materials as Nd:YAG, Nd:YLF, Nd:GdVO 4 , Yb:YAG, Yb:YLF, Yb:GdVO 4 , Er:YVO 4 , Er:YAG, Er:YLF, Re:GdVO 4 , Ho:YVO 4 , Ho:YAG, Ho:YLF, Ho:GdVO 4 , Ti:AlO 3 or the like may be utilized as the laser medium 11 .
  • the first block 15 a , the second block 15 b and the third block 15 c that are made from, for example, copper are disposed in such a manner to enclose the laser medium 11 . Additionally, there is formed a slit 13 between the first block 15 a and the second block 15 b so that the pumping light 12 from the LD 10 is inputted into the laser medium 11 .
  • the third block 15 c is formed with a flat portion 16 to be used for alignment of the crystal axis of the laser medium 11 by abutment of its flat portion against such flat portion 16 .
  • cooling water is forced to circulate in each of the blocks for indirectly cooling the laser medium 11 and the LD 10 .
  • the contact portion with the laser medium 11 is well polished to remove unevenness, thereby enhancing adherence between the laser medium 11 and the heat sink.
  • the inner surfaces of the first block 15 a , the second block 15 b and the third block 15 c are well polished to form mirror surfaces and a highly reflecting film coating such as an Au coating is preferably applied thereto.
  • the total diffusing angle of the pumping light can be reduced to 5 degrees or less.
  • the pumping light 12 is substantially parallel and the optical axis of the pumping light 12 passes through the center of the laser medium 11 .
  • the pumping light 12 propagates into the laser medium 11 in substantially parallel while being absorbed by the laser medium 11 .
  • the polarization surface of the pumping light 12 is parallel with the Y axis in FIG. 1 , the polarization surface of the pumping light 12 is parallel with the c-axis of the laser medium 11 by abutting the flat surface portion of the laser medium 11 against the third block 15 c . Accordingly, the absorbing rate of the pumping light 12 by the laser medium 11 and the induced emission cross section area of the laser oscillation are maximized, thereby achieving efficient laser oscillation even if Nd:YVO 4 having anisotropic characteristic is utilized as the laser medium 11 .
  • anisotropy of the Nd:YVO 4 crystal will be described by way of a concrete example.
  • the laser medium made from an Nd:YVO 4 crystal is rotated 90 degrees from the crystal axis that can be pumped in the maximum efficiency, absorption rate of the pumping light (in the range of about 808 nm) is significantly decreased by about 1 ⁇ 4 ⁇ 1 ⁇ 5 and the induced emission cross section area is also decreased by about 1 ⁇ 4 ⁇ 1 ⁇ 5.
  • the side surface of the laser medium 11 is made partially flat against which the flat surface portion 16 of the third block 15 c abuts, thereby easily aligning the crystal axis with the axial direction to pump in the maximum efficiency.
  • the incident surface A of the laser medium 11 is shaped so that the diffusing pumping light 12 from the LD 10 is converted into parallel light, thereby enabling to pump the laser medium uniformly and in high density with a simple construction that requires no optical system for converting the pumping light 12 into parallel light.
  • the pumping light 12 can be entrapped inside the laser medium 11 , thereby enabling to efficiently pump the laser medium.
  • a part of the side surface of the laser medium 11 is made flat, it is easy to align the crystal axis.
  • the embodied solid state laser can perform laser oscillation in high efficiency and high beam quality by using either anisotropic or isotropic laser medium.
  • the shape of the laser medium is not limited to the particular shape as shown in FIG. 2 , i.e., D-shape in cross section in perpendicular to the direction of oscillation axis. Similar advantages can be enjoyed as long as the laser medium has the incident surface for converting the diffusing incident light into parallel light and the reflection surface is flat.
  • FIG. 4 and FIG. 5 show modifications of the laser medium different from the one that is shown in FIG. 1 and FIG. 2 .
  • the laser medium 41 as shown in FIG. 4 both upper and lower surfaces of the D-shaped rod as shown in FIG. 2 are cut off.
  • the incident surface in FIG. 4 is replaced by symmetrical upper and lower flat surfaces, thereby providing generally pentagonal cross section as a whole.
  • all constituent elements other than the laser media 41 and 51 are identical to those in FIG. 1 .

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
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JP2002-305003 2002-10-18
JP2002305003A JP4047131B2 (ja) 2002-10-18 2002-10-18 固体レーザ装置

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JP4496029B2 (ja) * 2004-07-20 2010-07-07 株式会社リコー Ｌｄ励起固体レーザ装置
JP2007208002A (ja) * 2006-02-01 2007-08-16 Ricoh Co Ltd 半導体レーザー励起固体レーザー装置
EP2443707B1 (en) * 2009-06-15 2015-09-30 Pantec Biosolutions AG A monolithic, side pumped solid-state laser and applications thereof
WO2010145855A1 (en) * 2009-06-15 2010-12-23 Pantec Biosolutions Ag Monolithic, side pumped solid-state laser and method for operating the same
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CN101854026B (zh) * 2010-05-18 2011-11-09 中国科学院上海光学精密机械研究所 集成式激光二极管腔内泵浦的全固态激光器
US9236703B2 (en) * 2011-11-07 2016-01-12 Raytheon Company Laser system and method for producing a linearly polarized single frequency output using polarized and non-polarized pump diodes
US9515448B2 (en) 2012-09-26 2016-12-06 Raytheon Company Microchip laser with single solid etalon and interfacial coating
JP6411120B2 (ja) * 2014-08-04 2018-10-24 株式会社アマダミヤチ レーザ装置
CN104767106A (zh) * 2015-04-17 2015-07-08 山东大学 一种铒掺杂钇铝石榴石晶体镶套光波导放大器及其制备方法

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4739507A (en) * 1984-11-26 1988-04-19 Board Of Trustees, Stanford University Diode end pumped laser and harmonic generator using same
US4805177A (en) * 1988-04-25 1989-02-14 Laser Diode Products, Inc. Laser construction
JPH0254588A (ja) 1988-08-18 1990-02-23 Mitsubishi Electric Corp 固体レーザ装置
JPH04137775A (ja) 1990-09-28 1992-05-12 Nec Corp 半導体レーザ励起固体レーザ
US5124999A (en) * 1988-09-13 1992-06-23 Fuji Photo Film Co., Ltd. Laser-diode-pumped solid-state laser
US5182759A (en) * 1990-05-16 1993-01-26 Amoco Corporation Apparatus and method for pumping of a weakly absorbing lasant material
JPH05335662A (ja) 1992-05-27 1993-12-17 Hoya Corp 固体レーザ装置
US5317585A (en) * 1992-08-17 1994-05-31 Hughes Aircraft Company Laser reflecting cavity with ASE suppression and heat removal
US5341393A (en) * 1990-05-10 1994-08-23 Fuji Photo Film Co., Ltd. Laser-diode-pumped solid-state laser
US5349660A (en) * 1992-01-24 1994-09-20 Hewlett-Packard Company Method of improving performance in an automated test system
JPH07307A (ja) 1993-06-15 1995-01-06 Sekisui Chem Co Ltd シャワータワーの取付構造
US5590147A (en) * 1994-12-19 1996-12-31 The Morgan Curcible Company Plc Side-pumped lasers
US5802086A (en) * 1996-01-29 1998-09-01 Laser Power Corporation Single cavity solid state laser with intracavity optical frequency mixing
US6246711B1 (en) * 1999-03-25 2001-06-12 Raytheon Company Integrating diode pump cavity for an Er, Yb:glass laser
US6504650B1 (en) * 1999-10-19 2003-01-07 Anthony J. Alfrey Optical transformer and system using same
US6532248B2 (en) * 2000-02-28 2003-03-11 Nec Corporation Diode-laser side-pumped solid-state laser device
US6608851B2 (en) * 2000-12-26 2003-08-19 Compagnie Industrielle Des Lasers Cilas Laser source

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4739507A (en) * 1984-11-26 1988-04-19 Board Of Trustees, Stanford University Diode end pumped laser and harmonic generator using same
US4805177A (en) * 1988-04-25 1989-02-14 Laser Diode Products, Inc. Laser construction
JPH0254588A (ja) 1988-08-18 1990-02-23 Mitsubishi Electric Corp 固体レーザ装置
US5124999A (en) * 1988-09-13 1992-06-23 Fuji Photo Film Co., Ltd. Laser-diode-pumped solid-state laser
US5341393A (en) * 1990-05-10 1994-08-23 Fuji Photo Film Co., Ltd. Laser-diode-pumped solid-state laser
US5182759A (en) * 1990-05-16 1993-01-26 Amoco Corporation Apparatus and method for pumping of a weakly absorbing lasant material
JPH04137775A (ja) 1990-09-28 1992-05-12 Nec Corp 半導体レーザ励起固体レーザ
US5349660A (en) * 1992-01-24 1994-09-20 Hewlett-Packard Company Method of improving performance in an automated test system
JPH05335662A (ja) 1992-05-27 1993-12-17 Hoya Corp 固体レーザ装置
US5317585A (en) * 1992-08-17 1994-05-31 Hughes Aircraft Company Laser reflecting cavity with ASE suppression and heat removal
JPH07307A (ja) 1993-06-15 1995-01-06 Sekisui Chem Co Ltd シャワータワーの取付構造
US5590147A (en) * 1994-12-19 1996-12-31 The Morgan Curcible Company Plc Side-pumped lasers
US5802086A (en) * 1996-01-29 1998-09-01 Laser Power Corporation Single cavity solid state laser with intracavity optical frequency mixing
US6246711B1 (en) * 1999-03-25 2001-06-12 Raytheon Company Integrating diode pump cavity for an Er, Yb:glass laser
US6504650B1 (en) * 1999-10-19 2003-01-07 Anthony J. Alfrey Optical transformer and system using same
US6532248B2 (en) * 2000-02-28 2003-03-11 Nec Corporation Diode-laser side-pumped solid-state laser device
US6608851B2 (en) * 2000-12-26 2003-08-19 Compagnie Industrielle Des Lasers Cilas Laser source

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
2,4-ns Pulse Generation in a Solid-State, Passively Q-Switched, Laser-Diode-Pumped Nd:YAG Laser, Y. Isyanova and D. Welford, OSA Proceedings on Advanced Solid-State Lasers, 1993, vol. 15, pp 20-23.
Coherent Laser Radar, Jul. 23-27, 1995, 1995 Technical Digest Series, vol. 19, High Energy, Diode-Pumped Tm,Ho:YLF Laser Transmitter, John H. Flint and David M. Rines,, pp 314-317.
Conference on Lasers and Electro-Optics 1994, Technical Digest, vol. 8, Efficient,Side-pumped, TEM00 TM,Ho:YLF laser, John H. Flint, David M. Rines, p. 173.
Efficient TEM00-mode operation of a laser-diode side -pumped Nd:YAG laser, D. Welford, D.M.Rines, B.J. Dinerman, Dec. 1, 1991, vol. 16, No. 23, Optics Letters, pp1850-1852.
Letter from David Welford, Ph.D., received May 10, 2004.
Observation of Enhanced Thermal Lensing Due to Near-Gaussian Pump Energy Deposition in a Laser-Diode Side-Pumped Nd:YAG Laser, David Welford, David M. Rines, Bradley J. Dinerman, Robert Martinsen, IEEE Journal of Quantum Electronics, vol. 28, No. 4, Apr. 1992, pp. 1075-1080.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090159033A1 (en) * 2007-12-05 2009-06-25 Steigleman Jr Robert Lee Sparkless ignition plug for the internal combustion engine

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