US6517417B2 - Polishing pad with a transparent portion - Google Patents
Polishing pad with a transparent portion Download PDFInfo
- Publication number
- US6517417B2 US6517417B2 US09/792,813 US79281301A US6517417B2 US 6517417 B2 US6517417 B2 US 6517417B2 US 79281301 A US79281301 A US 79281301A US 6517417 B2 US6517417 B2 US 6517417B2
- Authority
- US
- United States
- Prior art keywords
- polishing
- index
- refraction
- transparent portion
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 252
- 239000000203 mixture Substances 0.000 claims abstract description 76
- 230000003287 optical effect Effects 0.000 claims abstract description 37
- 239000012530 fluid Substances 0.000 claims abstract description 29
- 239000007790 solid phase Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 13
- -1 poly(pentadecafluorooctyl acrylate) Polymers 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000012876 topography Methods 0.000 claims description 9
- 150000003839 salts Chemical class 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 5
- 239000007800 oxidant agent Substances 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 4
- 239000001230 potassium iodate Substances 0.000 claims description 4
- 229940093930 potassium iodate Drugs 0.000 claims description 4
- 235000006666 potassium iodate Nutrition 0.000 claims description 4
- NLSCHDZTHVNDCP-UHFFFAOYSA-N caesium nitrate Inorganic materials [Cs+].[O-][N+]([O-])=O NLSCHDZTHVNDCP-UHFFFAOYSA-N 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- IBOFVQJTBBUKMU-UHFFFAOYSA-N 4,4'-methylene-bis-(2-chloroaniline) Chemical compound C1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1 IBOFVQJTBBUKMU-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004202 carbamide Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- BGKAFNSJPUOHMN-UHFFFAOYSA-N 3,5,5,5-tetrafluoro-2-(1,1,2,2,2-pentafluoroethoxymethylidene)pentanoic acid Chemical compound C(C(C(=COC(C(F)(F)F)(F)F)C(=O)O)F)C(F)(F)F BGKAFNSJPUOHMN-UHFFFAOYSA-N 0.000 description 1
- RTNRBZJAKSUDCU-UHFFFAOYSA-N 3,5,5,5-tetrafluoro-2-(1,1,2,2,3,3,3-heptafluoropropoxymethylidene)pentanoic acid Chemical compound C(C(C(=COC(C(C(F)(F)F)(F)F)(F)F)C(=O)O)F)C(F)(F)F RTNRBZJAKSUDCU-UHFFFAOYSA-N 0.000 description 1
- CVEAUKUHJSSMKJ-UHFFFAOYSA-N 3,5,5,5-tetrafluoro-2-(trifluoromethoxymethylidene)pentanoic acid Chemical compound C(C(C(=COC(F)(F)F)C(=O)O)F)C(F)(F)F CVEAUKUHJSSMKJ-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 241001112258 Moca Species 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- ZYMKZMDQUPCXRP-UHFFFAOYSA-N fluoro prop-2-enoate Chemical compound FOC(=O)C=C ZYMKZMDQUPCXRP-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N hydroxylamine group Chemical group NO AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/14—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Definitions
- An exemplary liquid urethane is one which reacts with a polyfunctional amine, diamine, triamine or polyfunctional hydroxyl compound or mixed functionality compounds such as hydroxyl/amines dwelling in urethane/urea crosslinked networks to permit the formation of urea links and a cured/crosslinked polymer network.
- An exemplary the liquid urethane is reacted with 4,4′ methylene-bis(2-chloroaniline) (“MOCA”), which is commercially available as the product CURENE® 442, from Anderson Development Co. of Adrian, Mich.
- MOCA 4,4′ methylene-bis(2-chloroaniline)
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/792,813 US6517417B2 (en) | 2000-02-25 | 2001-02-24 | Polishing pad with a transparent portion |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18519700P | 2000-02-25 | 2000-02-25 | |
US09/792,813 US6517417B2 (en) | 2000-02-25 | 2001-02-24 | Polishing pad with a transparent portion |
Publications (2)
Publication Number | Publication Date |
---|---|
US20010031610A1 US20010031610A1 (en) | 2001-10-18 |
US6517417B2 true US6517417B2 (en) | 2003-02-11 |
Family
ID=22680000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/792,813 Expired - Fee Related US6517417B2 (en) | 2000-02-25 | 2001-02-24 | Polishing pad with a transparent portion |
Country Status (6)
Country | Link |
---|---|
US (1) | US6517417B2 (zh) |
EP (1) | EP1257386A1 (zh) |
JP (1) | JP2003524300A (zh) |
KR (1) | KR20020084150A (zh) |
TW (1) | TW522075B (zh) |
WO (1) | WO2001062440A1 (zh) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6608283B2 (en) * | 2000-02-08 | 2003-08-19 | Emagin Corporation | Apparatus and method for solder-sealing an active matrix organic light emitting diode |
US20030181139A1 (en) * | 2002-02-04 | 2003-09-25 | Kurt Lehman | Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad |
US20040018809A1 (en) * | 2002-03-18 | 2004-01-29 | Angela Petroski | Polishing pad for use in chemical/mechanical planarization of semiconductor wafers having a transparent window for end-point determination and method of making |
US20040033758A1 (en) * | 2001-12-28 | 2004-02-19 | Wiswesser Andreas Norbert | Polishing pad with window |
US6716085B2 (en) | 2001-12-28 | 2004-04-06 | Applied Materials Inc. | Polishing pad with transparent window |
US6855034B2 (en) * | 2001-04-25 | 2005-02-15 | Jsr Corporation | Polishing pad for semiconductor wafer and laminated body for polishing of semiconductor wafer equipped with the same as well as method for polishing of semiconductor wafer |
US20050060943A1 (en) * | 2003-09-19 | 2005-03-24 | Cabot Microelectronics Corporation | Polishing pad with recessed window |
US20070021045A1 (en) * | 2004-10-27 | 2007-01-25 | Ppg Industries Ohio, Inc. | Polyurethane Urea Polishing Pad with Window |
US20070042682A1 (en) * | 2005-08-18 | 2007-02-22 | Saikin Alan H | Transparent polishing pad |
US20090142989A1 (en) * | 2007-11-30 | 2009-06-04 | Innopad, Inc. | Chemical-Mechanical Planarization Pad Having End Point Detection Window |
US8758659B2 (en) | 2010-09-29 | 2014-06-24 | Fns Tech Co., Ltd. | Method of grooving a chemical-mechanical planarization pad |
US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002070200A1 (en) | 2001-03-01 | 2002-09-12 | Cabot Microelectronics Corporation | Method for manufacturing a polishing pad having a compressed translucent region |
US6722249B2 (en) * | 2001-11-06 | 2004-04-20 | Rodel Holdings, Inc | Method of fabricating a polishing pad having an optical window |
US6960120B2 (en) | 2003-02-10 | 2005-11-01 | Cabot Microelectronics Corporation | CMP pad with composite transparent window |
US6832947B2 (en) * | 2003-02-10 | 2004-12-21 | Cabot Microelectronics Corporation | CMP pad with composite transparent window |
EP1594656B1 (en) * | 2003-02-18 | 2007-09-12 | Parker-Hannifin Corporation | Polishing article for electro-chemical mechanical polishing |
US6984163B2 (en) * | 2003-11-25 | 2006-01-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with high optical transmission window |
US9156125B2 (en) * | 2012-04-11 | 2015-10-13 | Cabot Microelectronics Corporation | Polishing pad with light-stable light-transmitting region |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3851093A (en) * | 1971-07-12 | 1974-11-26 | D Sunstein | Color television display system and method for reducing visibility of geometric pattern of colored-light sources, and method for fabrication thereof |
US5018811A (en) | 1990-07-18 | 1991-05-28 | Northrop Corporation | Asymmetric optical waveguides for minimizing bending losses and techniques for fabricating same |
US5106394A (en) * | 1990-10-01 | 1992-04-21 | The United States Of America As Represented By The Secretary Of The Navy | Fiber optic polishing system |
US5136818A (en) * | 1990-10-01 | 1992-08-11 | The United States Of America As Represented By The Secretary Of The Navy | Method of polishing optical fiber |
US5413941A (en) | 1994-01-06 | 1995-05-09 | Micron Technology, Inc. | Optical end point detection methods in semiconductor planarizing polishing processes |
US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
EP0747167A2 (en) | 1995-06-09 | 1996-12-11 | Applied Materials, Inc. | Apparatus for holding a substrate during polishing |
US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
US5609511A (en) | 1994-04-14 | 1997-03-11 | Hitachi, Ltd. | Polishing method |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5899792A (en) | 1996-12-10 | 1999-05-04 | Nikon Corporation | Optical polishing apparatus and methods |
US6074287A (en) | 1996-04-12 | 2000-06-13 | Nikon Corporation | Semiconductor wafer polishing apparatus |
US6171181B1 (en) | 1999-08-17 | 2001-01-09 | Rodel Holdings, Inc. | Molded polishing pad having integral window |
US6247998B1 (en) * | 1999-01-25 | 2001-06-19 | Applied Materials, Inc. | Method and apparatus for determining substrate layer thickness during chemical mechanical polishing |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000254860A (ja) * | 1999-03-08 | 2000-09-19 | Nikon Corp | 研磨装置 |
-
2001
- 2001-02-23 WO PCT/US2001/005956 patent/WO2001062440A1/en not_active Application Discontinuation
- 2001-02-23 JP JP2001561489A patent/JP2003524300A/ja active Pending
- 2001-02-23 EP EP01918230A patent/EP1257386A1/en not_active Withdrawn
- 2001-02-23 KR KR1020027011074A patent/KR20020084150A/ko not_active Application Discontinuation
- 2001-02-24 US US09/792,813 patent/US6517417B2/en not_active Expired - Fee Related
- 2001-05-02 TW TW090104198A patent/TW522075B/zh not_active IP Right Cessation
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3851093A (en) * | 1971-07-12 | 1974-11-26 | D Sunstein | Color television display system and method for reducing visibility of geometric pattern of colored-light sources, and method for fabrication thereof |
US5018811A (en) | 1990-07-18 | 1991-05-28 | Northrop Corporation | Asymmetric optical waveguides for minimizing bending losses and techniques for fabricating same |
US5106394A (en) * | 1990-10-01 | 1992-04-21 | The United States Of America As Represented By The Secretary Of The Navy | Fiber optic polishing system |
US5136818A (en) * | 1990-10-01 | 1992-08-11 | The United States Of America As Represented By The Secretary Of The Navy | Method of polishing optical fiber |
US5413941A (en) | 1994-01-06 | 1995-05-09 | Micron Technology, Inc. | Optical end point detection methods in semiconductor planarizing polishing processes |
US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5609511A (en) | 1994-04-14 | 1997-03-11 | Hitachi, Ltd. | Polishing method |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
EP0747167A2 (en) | 1995-06-09 | 1996-12-11 | Applied Materials, Inc. | Apparatus for holding a substrate during polishing |
US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
US6074287A (en) | 1996-04-12 | 2000-06-13 | Nikon Corporation | Semiconductor wafer polishing apparatus |
US5899792A (en) | 1996-12-10 | 1999-05-04 | Nikon Corporation | Optical polishing apparatus and methods |
US6247998B1 (en) * | 1999-01-25 | 2001-06-19 | Applied Materials, Inc. | Method and apparatus for determining substrate layer thickness during chemical mechanical polishing |
US6171181B1 (en) | 1999-08-17 | 2001-01-09 | Rodel Holdings, Inc. | Molded polishing pad having integral window |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6608283B2 (en) * | 2000-02-08 | 2003-08-19 | Emagin Corporation | Apparatus and method for solder-sealing an active matrix organic light emitting diode |
US6855034B2 (en) * | 2001-04-25 | 2005-02-15 | Jsr Corporation | Polishing pad for semiconductor wafer and laminated body for polishing of semiconductor wafer equipped with the same as well as method for polishing of semiconductor wafer |
US20050266771A1 (en) * | 2001-12-28 | 2005-12-01 | Applied Materials, Inc., A Delaware Corporation | Polishing pad with window |
US7198544B2 (en) | 2001-12-28 | 2007-04-03 | Applied Materials, Inc. | Polishing pad with window |
US20040033758A1 (en) * | 2001-12-28 | 2004-02-19 | Wiswesser Andreas Norbert | Polishing pad with window |
US6716085B2 (en) | 2001-12-28 | 2004-04-06 | Applied Materials Inc. | Polishing pad with transparent window |
US6994607B2 (en) | 2001-12-28 | 2006-02-07 | Applied Materials, Inc. | Polishing pad with window |
US20060148383A1 (en) * | 2002-02-04 | 2006-07-06 | Kla Tencor Technologies | Methods and systems for detecting a presence of blobs on a specimen during a polishing process |
US20030181139A1 (en) * | 2002-02-04 | 2003-09-25 | Kurt Lehman | Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad |
US8831767B2 (en) | 2002-02-04 | 2014-09-09 | Kla-Tencor Technologies Corp. | Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool |
US6866559B2 (en) * | 2002-02-04 | 2005-03-15 | Kla-Tencor Technologies | Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad |
US20060131273A1 (en) * | 2002-02-04 | 2006-06-22 | Kla-Tencor Technologies Corp. | Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool |
US8010222B2 (en) | 2002-02-04 | 2011-08-30 | Kla-Tencor Technologies Corp. | Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool |
US7332438B2 (en) | 2002-02-04 | 2008-02-19 | Kla-Tencor Technologies Corp. | Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool |
US20040018809A1 (en) * | 2002-03-18 | 2004-01-29 | Angela Petroski | Polishing pad for use in chemical/mechanical planarization of semiconductor wafers having a transparent window for end-point determination and method of making |
US6875077B2 (en) | 2002-03-18 | 2005-04-05 | Raytech Innovative Solutions, Inc. | Polishing pad for use in chemical/mechanical planarization of semiconductor wafers having a transparent window for end-point determination and method of making |
US7195539B2 (en) | 2003-09-19 | 2007-03-27 | Cabot Microelectronics Coporation | Polishing pad with recessed window |
US20050060943A1 (en) * | 2003-09-19 | 2005-03-24 | Cabot Microelectronics Corporation | Polishing pad with recessed window |
US20070021045A1 (en) * | 2004-10-27 | 2007-01-25 | Ppg Industries Ohio, Inc. | Polyurethane Urea Polishing Pad with Window |
US20070042682A1 (en) * | 2005-08-18 | 2007-02-22 | Saikin Alan H | Transparent polishing pad |
US7273407B2 (en) * | 2005-08-18 | 2007-09-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Transparent polishing pad |
US20090142989A1 (en) * | 2007-11-30 | 2009-06-04 | Innopad, Inc. | Chemical-Mechanical Planarization Pad Having End Point Detection Window |
US7985121B2 (en) | 2007-11-30 | 2011-07-26 | Innopad, Inc. | Chemical-mechanical planarization pad having end point detection window |
US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
US8758659B2 (en) | 2010-09-29 | 2014-06-24 | Fns Tech Co., Ltd. | Method of grooving a chemical-mechanical planarization pad |
Also Published As
Publication number | Publication date |
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EP1257386A1 (en) | 2002-11-20 |
JP2003524300A (ja) | 2003-08-12 |
US20010031610A1 (en) | 2001-10-18 |
KR20020084150A (ko) | 2002-11-04 |
WO2001062440A1 (en) | 2001-08-30 |
TW522075B (en) | 2003-03-01 |
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