US6406646B1 - Resistive paste for the formation of electrically heat-generating thick film - Google Patents
Resistive paste for the formation of electrically heat-generating thick film Download PDFInfo
- Publication number
- US6406646B1 US6406646B1 US09/739,545 US73954500A US6406646B1 US 6406646 B1 US6406646 B1 US 6406646B1 US 73954500 A US73954500 A US 73954500A US 6406646 B1 US6406646 B1 US 6406646B1
- Authority
- US
- United States
- Prior art keywords
- weight
- paste composition
- glass frit
- particle size
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015572 biosynthetic process Effects 0.000 title claims description 7
- 239000002245 particle Substances 0.000 claims abstract description 71
- 239000000203 mixture Substances 0.000 claims abstract description 57
- 239000011521 glass Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000011230 binding agent Substances 0.000 claims abstract description 13
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 17
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 13
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 11
- 229910052906 cristobalite Inorganic materials 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 229910052682 stishovite Inorganic materials 0.000 claims description 11
- 229910052905 tridymite Inorganic materials 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 238000001354 calcination Methods 0.000 claims description 9
- 229910052593 corundum Inorganic materials 0.000 claims description 9
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 238000007598 dipping method Methods 0.000 abstract description 3
- 238000007650 screen-printing Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 8
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 7
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 235000010980 cellulose Nutrition 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 229910019834 RhO2 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003837 high-temperature calcination Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010665 pine oil Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920006375 polyphtalamide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06553—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of a combination of metals and oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
Definitions
- the present invention relates to a resistive paste composition for the formation of an electrically heat-generating thick film, particularly to a paste composition which can be calcined at about 600° C. or lower to provide a film having good stability, uniformity and heat-up characteristics.
- a resistive paste composition is used for forming a thick film resistive element on an electrically insulating substrate by a screen printing or dipping method, and it generally comprises conductive materials and inorganic and organic binder materials.
- the process for forming such a film involves a high temperature calcination step wherein the organic component is removed and the inorganic component is molten down to increase the integrity of the conductive components to the substrate, and hitherto, various resistive pastes have been developed.
- Japanese Unexamined Patent Publication No. sho 53-100496 discloses a paste for a resistor element, which comprises ruthenium oxide particles and glass frit powders dispersed in an organic medium composed of an organic solvent and a resin; and U.S. Pat. No. 5,510,823 assigned to Fuji Xerox Co., Ltd. describes a resistive element film-forming paste comprising an organic metal compound and at least one organic binder compound and an asphalt solution to improve the dispersion of the compounds. Further, Korean Patent No. 130831 issued to DuPont teaches a thick film resistor composition comprising 5 to 30 wt % of ruthenium pyrochlore oxide (PbRuO 3 )and 10 to 90 wt % of a glass binder.
- PbRuO 3 ruthenium pyrochlore oxide
- U.S. Pat. No. 5,900,295 assigned to Fuji Electric Co., Ltd. relates to a fixing roller used for fixing a toner on a paper sheet and installed on an electro-photographic devices such as a copying machine, a printer or a facsimile machine, which comprises a cylinder-shaped metallic base body, an insulation layer and a resistance layer.
- the resistance layer is formed from a resin composition comprising a resin selected from polyphenylene sulfide, polyphthalamide and a liquid crystal polymer, and a mixture of carbon black and carbon fiber.
- the resistance layer must be formed by a cumbersome injection molding process due to the characteristics of the resin component used in this patent, and thus, it is difficult to provide a film having a uniform thickness and a good heat-generating property.
- a resistive paste composition for the formation of an electrically heat-generating layer which comprises
- the conductive Ru and Ag components are employed to control the electrical and mechanical properties of the paste composition.
- the glass frit is employed to increase the adhesive strength of the resulting thick film to the substrate, and the organic binder functions to enhance the dispersion of the conductive materials and the inorganic binder in the composition.
- the Ru component employed in the present invention may be ruthenium metal or an oxide thereof, e.g., RuO 2 , GdBiRu 2 O 6-7 , Pb 2 Ru 2 O 6-7 , Co 2 Ru 2 O 6-7 , PbBiRu 2 O 6-7 , Cu x Bi 2 ⁇ x Ru 2 O 6-7 (0 ⁇ x ⁇ 1) and Bi 2 Ru 2 O 6-7 .
- the Ru component in the form of particles has a specific surface area of 5 to 30 m 2 /g, preferably 10 to 25 m 2 /g, and an average particle diameter of 0.01 to 0.1 ⁇ m, preferably 0.02 to 0.08 ⁇ m.
- the specific surface area is less than 5 m 2 /g or the average particle diameter is greater than 0.1 ⁇ m, the particle size is too great to provide a uniform film having smooth surface.
- the specific surface area is greater than 30 m 2 /g or the average diameter is less than 0.01 ⁇ m, the resulting paste composition has poor printing and calcining properties, leading to a film having a low density.
- the particles of the Ru component are employed in an amount ranging from 5 to 75% by weight, preferably from 5 to 20% by weight of the composition. If the amount is greater than 75%, the surface smoothness of the film deteriorates, and if the amount is less than 5%, the film has an excessively high resistance.
- the Ag component employed in the present invention may be metallic silver, or an oxide thereof (e.g., Ag 2 O) or an alloy thereof (e.g., AgPd, Ag 0.1 Pd 0.9 RhO 2 ).
- an oxide thereof e.g., Ag 2 O
- an alloy thereof e.g., AgPd, Ag 0.1 Pd 0.9 RhO 2
- the Ag component in the form of particles has preferably a specific surface area of 0.5 to 3.5 m 2 /g and an average particle diameter of 0.1 to 3 ⁇ m and a maximum particle size of 8 ⁇ m or less.
- the specific surface area is less than 0.5 m 2 /g or the average particle diameter is greater than 3 ⁇ m, the resulting film has a rough surface and the resolution of the printed film pattern becones poor.
- the specific surface area is greater than 3.5 m 2 /g or the average particle diameter is less than 0.1 ⁇ m, the paste tends to agglomerate easily, has poor printability, and undergoes an excessive shrinkage during the calcination process, which leads to the formation of cracks on the film surface.
- the Ag component preferably has a density of 2.5 to 6 g/cm 3 . If the density is not within the specified range, the printability of the paste may become poor.
- the particles of the Ag component are employed in an amount ranging from 5 to 75% by weight, preferably from 20 to 40% by weight of the composition. If the amount does not fall within the specified range, the film does not have a proper resistance.
- the glass frit employed in the present invention functions as an inorganic binder for bringing to the particles of the Ru component into contact with each other. Also, the glass frit powder which agglomerates during the calcination process enhances the adhesive strength of the resulting film to a substrate.
- the glass frit used in the present invention has a softening point ranging from 400 to 550° C., preferably from 420 to 500° C.
- the softening point is lower than 400° C.
- the resulting film tends to have blisters on the surface thereof due to inclusion of organic components.
- the softening point is higher than 550° C., the adhesive strength of the resulting film to the substrate becomes poor.
- the glass frit is employed in an amount ranging from 5 to 40% by weight, preferably from 10 to 40% by weight of the composition. If the amount is less than 5%, the adhesive strength of the calcined film to the substrate is poor, whereas if the amount is greater than 40%, the film's resistance becomes too high.
- Glass Frit A bismuth oxide(Bi 2 O 3 )-based glass frit
- PbO lead oxide
- Glass Frit B a bismuth oxide-based glass frit
- Glass Frit A preferably comprises at least 90% by weight of a glass frit having the composition represented in Table 1
- Glass frit B preferably comprises at least 90% by weight of a glass frit having the composition represented in Table 2.
- the mixture form preferably comprises at least 90% by weight of a glass frit having the composition represented in Table 3.
- Bi 2 O 3 40 to 90 (preferably 50 to 80) SiO 2 5 to 30 (preferably 5 to 15) B 2 O 3 5 to 30 (preferably 7 to 20) BaO 2 to 40 (preferably 2 to 30)
- PbO 40 to 90 (preferably 50 to 80) SiO 2 10 to 40 (preferably 10 to 30) B 2 O 3 5 to 30 (preferably 5 to 20) TiO 2 0 to 10 (preferably 2 to 5) Al 2 O 3 0 to 20 (preferably 2 to 15)
- compositions of the above-mentioned glass frits when the content of bismuth oxide or lead oxide is less than 40 wt %, the adhesive strength of the film does not enhance any longer, and when it is greater than 90 wt %, the softening point of the glass frit decreases and the adhesive strength deteriorates.
- boron oxide, barium oxide, titanium oxide and aluminum oxide are employed to control the calcination temperature of the paste composition which is directly related to the adhesive strength of the film and the stability of the glass frit.
- the glass frit in the form of a powder has an average particle size of 0.2 to 5 ⁇ m and a maximum particle size of 10 ⁇ m or less.
- the average diameter is within the specified range, a film having a satisfactory adhesive strength, low resistance and high density can be obtained by a low temperature calcination procedure.
- organic binder examples include celluloses such as ethyl cellulose, methyl cellulose, nitrocellulose and carboxymethyl cellulose; and resins such as acrylic acid esters, methacrylic acid esters, polyvinyl alcohols and polyvinyl butyrals.
- An acryl resin and ethyl cellulose may be preferably employed.
- the organic binder is employed in an amount of 5 to 45% by weight.
- an organic solvent may be used for the purpose of dissolving the organic binder and dispersing the conductive particles and glass frit powder to obtain the paste composition having a suitable viscosity.
- the organic solvent include texanol(2,2,4-trimethyl- 1,3-pentanediolmonoisobutyrate), ethylene glycol (terpene), butyl carbitol, ethyl cellosolve, ethyl benzene, isopropyl benzene, methylethyl ketone, dioxane, acetone, cyclohexanone, cyclopentanone, isobutyl alcohol, dimethyl sulfoxide, terepineol, pine oil, polyvinyl butyral, 3-methoxybutyl acetate, y-butyrolactone, diethyl phthalate and a mixture thereof.
- the inventive paste composition may optionally comprise other additives in order to enhance the storage stability of the paste composition, the uniformity of the film thickness and the resolution of the printed pattern, and also to prevent the formation of cracks on the film surface.
- additives include a polymerization stopping agent(e.g., monomethyl ether), a dispersant(e.g., polyacrylates, cellulose derivatives), a tackifying agent(e.g., a silane coupling agent), a defoaming agent, a plasticizer(e.g., polyethylene glycol, dibutyl phthalate), a surfactant and a thixotropic agent.
- the additives may be employed in amounts that would not adversely affect the intended functions of the above-mentioned main components.
- the inventive paste composition may be compounded with a conventional compounding equipment, for example, using a three-screw roller, roll mill, mixer or homogenizer.
- the inventive composition is controlled to have a viscosity of 70,000 to 300,0000 cp (centipoise), preferably 100,000 to 200,0000 cp, more preferably 130,000 to 180,0000 cp at a shear rate of 4 S ⁇ 1 .
- a heat-generating thick film layer having good chemical and physical stability may be formed by coating the inventive paste composition on a suitable substrate by using a convenient screen printing or dipping method, drying the coated substrate at a temperature ranging from 80 to 120° C. for about 5 to 10 minutes, and calcining the dried substrate at a relatively low temperature ranging from 500 to 600° C. for about 5 to 30 minutes.
- the temperature may be elevated to the calcination temperature at a rate of 30 to 80° C./min, preferably about 40° C./min.
- the inventive heat-generating thick film has a low resistance ranging from about 0.1 to 30 ⁇ /mm 2 and an operating temperature ranging from room temperature to 300° C., and can be heated-up quickly to about 200° C. (i.e., a temperature conventionally required for operating various electric or electronic equipments) in about 5 to 15 seconds. Therefore, the inventive heat-generating thick layer may be beneficially employed in various electronic and electrical equipments comprising a heat-generating means, e.g., a thermal head.
- a heat-generating means e.g., a thermal head.
- a powder mixture was prepared as represented in Table 4.
- the paste composition was screen-printed on a substrate made of 96% alumina and dried at 150° C. for 10 minutes to obtain a 2.5 cm ⁇ 2.5 cm resistive film having a thickness of 23 ⁇ m.
- the resistive film was heated to 550° C. at a rate of 40° C./min and maintain at 550° C. for 20 minutes to form a resistive layer a thickness of 6 ⁇ m on the substrate.
- a protective glass layer was formed using a glass composition comprising 70 wt % of a glass frit consisted of 85 wt % of PbO, 5 wt % of SiO 2 and 10 wt % of B 2 O 3 (a softening point of 305° C., an average particle size of less then about 3 ⁇ m and a maximul particle size of about 10 ⁇ m or less) and 30 wt % of an organic vehicle, to prepare a thick film heat-generating element.
- a glass composition comprising 70 wt % of a glass frit consisted of 85 wt % of PbO, 5 wt % of SiO 2 and 10 wt % of B 2 O 3 (a softening point of 305° C., an average particle size of less then about 3 ⁇ m and a maximul particle size of about 10 ⁇ m or less) and 30 wt % of an organic vehicle, to prepare a thick film heat-generating element.
- the thick film heat-generating element thus obtained was found to have a resistance of 12 ⁇ /mm 2 , and to require 12 seconds for it to reach 200° C. when AC 110 V was applied to the electrodes.
- Example 1 The procedure of Example 1 was repeated except for using a powder mixture having the composition shown in Table 5.
- the resistive thick film had a thickness of 5 ⁇ m and the heat-generating element was found to have a resistance of 6 ⁇ /mm 2 , and to require 6 seconds for it to reach 200° C. when AC 110 V was applied to the electrodes.
- Example 2 The procedure of Example 2 was repeated except for using a powder mixture having the composition shown in Table 6.
- the resistive thick film had a thickness of 5 ⁇ m and the heat-generating element was found to have a resistance of 25 ⁇ /mm 2 , and to require 12 seconds for it to reach 200° C. when AC 220 V was applied to the electrodes.
- Example 1 The procedure of Example 1 was repeated except for using a powder mixture having the composition shown in Table 7.
- the resistive thick film had a thickness of 4 ⁇ m and the heat-generating element was found to have a resistance of 480 ⁇ /mm 2 , and to break down when AC 110 V was applied to the electrodes.
- Example 3 The procedure of Example 3 was repeated except for using a powder mixture having the composition shown in Table 8.
- the resistive thick film had a thickness of 8 ⁇ m and the heat-generating element was found to have a resistance of 25 k ⁇ /mm 2 , and to require 10 minutes and 30 seconds for it to reach 200° C. when AC 110 V was applied to the electrodes.
- Example 1 The procedure of Example 1 was repeated except for using a powder mixture having the composition shown in Table 9.
- the resistive thick film had a thickness of 8 ⁇ m and the heat-generating element was found to have a resistance of 4.3 k ⁇ /mm 2 , and to require 5 minutes and 15 seconds for it to reach 200° C. when AC 110 V was applied to the electrodes. Further, the thick film was broken so that the calcined film cannot be obtained.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Conductive Materials (AREA)
- Non-Adjustable Resistors (AREA)
- Resistance Heating (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Surface Heating Bodies (AREA)
- Glass Compositions (AREA)
Abstract
A resistive paste composition comprising 5 to 75% by weight of ruthenium(Ru) metal or ruthemium oxide particles having a specific surface area of 5 to 30 m2/g, 5 to 75% by weight of silver(Ag) metal or its compound particles having an average particle size of 0.1 to 3 μm and a maximum particle size of 8 μm or less, 5 to 40% by weight of a glass frit having a softening point of 400 to 550° C. and 5 to 45% by weight of an organic binder can be coated by a conventional screen-printing or dipping method on a substrate and then calcined at a low temperature of about 500 to 600° C. to form an electrically heat-generating thick film layer having good stability, uniformity and heat-up characteristics.
Description
The present invention relates to a resistive paste composition for the formation of an electrically heat-generating thick film, particularly to a paste composition which can be calcined at about 600° C. or lower to provide a film having good stability, uniformity and heat-up characteristics.
A resistive paste composition is used for forming a thick film resistive element on an electrically insulating substrate by a screen printing or dipping method, and it generally comprises conductive materials and inorganic and organic binder materials. The process for forming such a film involves a high temperature calcination step wherein the organic component is removed and the inorganic component is molten down to increase the integrity of the conductive components to the substrate, and hitherto, various resistive pastes have been developed.
For example, Japanese Unexamined Patent Publication No. sho 53-100496 discloses a paste for a resistor element, which comprises ruthenium oxide particles and glass frit powders dispersed in an organic medium composed of an organic solvent and a resin; and U.S. Pat. No. 5,510,823 assigned to Fuji Xerox Co., Ltd. describes a resistive element film-forming paste comprising an organic metal compound and at least one organic binder compound and an asphalt solution to improve the dispersion of the compounds. Further, Korean Patent No. 130831 issued to DuPont teaches a thick film resistor composition comprising 5 to 30 wt % of ruthenium pyrochlore oxide (PbRuO3)and 10 to 90 wt % of a glass binder.
However, the process of preparing resistor elements using the paste compositions disclosed in the above patents requires a high calcination temperature ranging from about 600 to 1,000° C. Accordingly, their application is limited to substrates which can stand such a high temperature.
Recently, a method of preparing a film-type heat-generating element using a self-heating resistive paste composition has attracted attention since it requires no separate heating source and can reduce the weight of a device.
U.S. Pat. No. 5,900,295 assigned to Fuji Electric Co., Ltd. relates to a fixing roller used for fixing a toner on a paper sheet and installed on an electro-photographic devices such as a copying machine, a printer or a facsimile machine, which comprises a cylinder-shaped metallic base body, an insulation layer and a resistance layer. In this patent, the resistance layer is formed from a resin composition comprising a resin selected from polyphenylene sulfide, polyphthalamide and a liquid crystal polymer, and a mixture of carbon black and carbon fiber. However, the resistance layer must be formed by a cumbersome injection molding process due to the characteristics of the resin component used in this patent, and thus, it is difficult to provide a film having a uniform thickness and a good heat-generating property.
Accordingly, it is a primary object of the invention to provide an improved resistive paste composition which can be applied on a substrate by a printing method and can be calcined at a low temperature to form on the substrate a heat-generating thick film having good stability, uniformity and heat-up characteristics.
In accordance with an aspect of the present invention, there is provided a resistive paste composition for the formation of an electrically heat-generating layer, which comprises
(a) 5 to 75% by weight of particles of ruthenium(Ru) metal or an oxide thereof having a specific surface area of 5 to 30 m2/g,
(b) 5 to 75% by weight of particles of silver(Ag) metal or a compound thereof having an average particle size of 0. 1 to 3 μm, the maximum particle size not exceeding 8 μm,
(c) 5 to 40% by weight of a glass frit powder having a softening point of 400 to 550° C. and
(d) 5 to 45% by weight of an organic binder.
In the inventive composition, the conductive Ru and Ag components are employed to control the electrical and mechanical properties of the paste composition. Further, the glass frit is employed to increase the adhesive strength of the resulting thick film to the substrate, and the organic binder functions to enhance the dispersion of the conductive materials and the inorganic binder in the composition.
(a) Ru component
The Ru component employed in the present invention may be ruthenium metal or an oxide thereof, e.g., RuO2, GdBiRu2O6-7, Pb2Ru2O6-7, Co2Ru2O6-7, PbBiRu2O6-7, CuxBi2−xRu2O6-7 (0<x<1) and Bi2Ru2O6-7.
The Ru component in the form of particles has a specific surface area of 5 to 30 m2/g, preferably 10 to 25 m2/g, and an average particle diameter of 0.01 to 0.1 μm, preferably 0.02 to 0.08 μm. When the specific surface area is less than 5 m2/g or the average particle diameter is greater than 0.1 μm, the particle size is too great to provide a uniform film having smooth surface. Further, when the specific surface area is greater than 30 m2/g or the average diameter is less than 0.01 μm, the resulting paste composition has poor printing and calcining properties, leading to a film having a low density.
In the present invention, the particles of the Ru component are employed in an amount ranging from 5 to 75% by weight, preferably from 5 to 20% by weight of the composition. If the amount is greater than 75%, the surface smoothness of the film deteriorates, and if the amount is less than 5%, the film has an excessively high resistance.
(b) Ag component
The Ag component employed in the present invention may be metallic silver, or an oxide thereof (e.g., Ag2O) or an alloy thereof (e.g., AgPd, Ag0.1Pd0.9RhO2). In order to obtain a paste which can be calcined at a low temperature, it is particularly preferred to employ the Ag component in the form of plate-shaped particles.
The Ag component in the form of particles has preferably a specific surface area of 0.5 to 3.5 m2/g and an average particle diameter of 0.1 to 3 μm and a maximum particle size of 8 μm or less. When the specific surface area is less than 0.5 m2/g or the average particle diameter is greater than 3 μm, the resulting film has a rough surface and the resolution of the printed film pattern becones poor. Further, when the specific surface area is greater than 3.5 m2/g or the average particle diameter is less than 0.1 μm, the paste tends to agglomerate easily, has poor printability, and undergoes an excessive shrinkage during the calcination process, which leads to the formation of cracks on the film surface.
The Ag component preferably has a density of 2.5 to 6 g/cm3. If the density is not within the specified range, the printability of the paste may become poor.
In the present invention, the particles of the Ag component are employed in an amount ranging from 5 to 75% by weight, preferably from 20 to 40% by weight of the composition. If the amount does not fall within the specified range, the film does not have a proper resistance.
(c) Glass frit
The glass frit employed in the present invention functions as an inorganic binder for bringing to the particles of the Ru component into contact with each other. Also, the glass frit powder which agglomerates during the calcination process enhances the adhesive strength of the resulting film to a substrate.
The glass frit used in the present invention has a softening point ranging from 400 to 550° C., preferably from 420 to 500° C. When the softening point is lower than 400° C., the resulting film tends to have blisters on the surface thereof due to inclusion of organic components. When the softening point is higher than 550° C., the adhesive strength of the resulting film to the substrate becomes poor.
In the present invention, the glass frit is employed in an amount ranging from 5 to 40% by weight, preferably from 10 to 40% by weight of the composition. If the amount is less than 5%, the adhesive strength of the calcined film to the substrate is poor, whereas if the amount is greater than 40%, the film's resistance becomes too high.
Examples of the glass frit which may be used in the present invention include a bismuth oxide(Bi2O3)-based glass frit (“Glass Frit A”), a lead oxide (PbO)-based glass frit (“Glass Frit B”), or a mixture thereof. Specifically, Glass frit A preferably comprises at least 90% by weight of a glass frit having the composition represented in Table 1 and Glass frit B preferably comprises at least 90% by weight of a glass frit having the composition represented in Table 2. Further, the mixture form preferably comprises at least 90% by weight of a glass frit having the composition represented in Table 3.
TABLE 1 | |||
Components | Content (wt %) | ||
Bi2O3 | 40 to 90 (preferably 50 to 80) | ||
SiO2 | 5 to 30 (preferably 5 to 15) | ||
B2O3 | 5 to 30 (preferably 7 to 20) | ||
BaO | 2 to 40 (preferably 2 to 30) | ||
TABLE 2 | |||
Components | Content (wt %) | ||
PbO | 40 to 90 (preferably 50 to 80) | ||
SiO2 | 10 to 40 (preferably 10 to 30) | ||
B2O3 | 5 to 30 (preferably 5 to 20) | ||
TiO2 | 0 to 10 (preferably 2 to 5) | ||
Al2O3 | 0 to 20 (preferably 2 to 15) | ||
TABLE 3 | |||
Components | Content (wt %) | ||
Bi2O3 | 40 to 90 | ||
PbO | 40 to 90 | ||
SiO2 | 5 to 30 | ||
B2O3 | 5 to 30 | ||
BaO | 2 to 40 | ||
TiO2 | 0 to 10 | ||
Al2O3 | 0 to 20 | ||
As to the compositions of the above-mentioned glass frits, when the content of bismuth oxide or lead oxide is less than 40 wt %, the adhesive strength of the film does not enhance any longer, and when it is greater than 90 wt %, the softening point of the glass frit decreases and the adhesive strength deteriorates.
Further, when the content of silicon oxide is less than the lower limits specified in Tables 1, 2 and 3, the stability of the glass frit deteriorates, and when it is greater than the specified upper limits, it is difficult to calcine the paste at a temperature of 570° C. or lower.
Furthermore, in the above-mentioned glass frits, boron oxide, barium oxide, titanium oxide and aluminum oxide are employed to control the calcination temperature of the paste composition which is directly related to the adhesive strength of the film and the stability of the glass frit.
In accordance with the present invention, the glass frit in the form of a powder has an average particle size of 0.2 to 5 μm and a maximum particle size of 10 μm or less. When the average diameter is within the specified range, a film having a satisfactory adhesive strength, low resistance and high density can be obtained by a low temperature calcination procedure.
(d) Organic binder
Examples of the organic binder which may be employed in the present invention include celluloses such as ethyl cellulose, methyl cellulose, nitrocellulose and carboxymethyl cellulose; and resins such as acrylic acid esters, methacrylic acid esters, polyvinyl alcohols and polyvinyl butyrals. An acryl resin and ethyl cellulose may be preferably employed.
In the present invention, the organic binder is employed in an amount of 5 to 45% by weight.
(e) Organic solvent
In the inventive paste composition, an organic solvent may be used for the purpose of dissolving the organic binder and dispersing the conductive particles and glass frit powder to obtain the paste composition having a suitable viscosity. Representative examples of the organic solvent include texanol(2,2,4-trimethyl- 1,3-pentanediolmonoisobutyrate), ethylene glycol (terpene), butyl carbitol, ethyl cellosolve, ethyl benzene, isopropyl benzene, methylethyl ketone, dioxane, acetone, cyclohexanone, cyclopentanone, isobutyl alcohol, dimethyl sulfoxide, terepineol, pine oil, polyvinyl butyral, 3-methoxybutyl acetate, y-butyrolactone, diethyl phthalate and a mixture thereof.
(f) Other additives
In addition to the above-mentioned components, the inventive paste composition may optionally comprise other additives in order to enhance the storage stability of the paste composition, the uniformity of the film thickness and the resolution of the printed pattern, and also to prevent the formation of cracks on the film surface. Representative examples of such additives include a polymerization stopping agent(e.g., monomethyl ether), a dispersant(e.g., polyacrylates, cellulose derivatives), a tackifying agent(e.g., a silane coupling agent), a defoaming agent, a plasticizer(e.g., polyethylene glycol, dibutyl phthalate), a surfactant and a thixotropic agent.
The additives may be employed in amounts that would not adversely affect the intended functions of the above-mentioned main components.
(g) Compounding and Formation of heat-generating layer
The inventive paste composition may be compounded with a conventional compounding equipment, for example, using a three-screw roller, roll mill, mixer or homogenizer.
For imparting the morphology suitable for applying on a substrate, the inventive composition is controlled to have a viscosity of 70,000 to 300,0000 cp (centipoise), preferably 100,000 to 200,0000 cp, more preferably 130,000 to 180,0000 cp at a shear rate of 4 S−1.
In accordance with the present invention, a heat-generating thick film layer having good chemical and physical stability may be formed by coating the inventive paste composition on a suitable substrate by using a convenient screen printing or dipping method, drying the coated substrate at a temperature ranging from 80 to 120° C. for about 5 to 10 minutes, and calcining the dried substrate at a relatively low temperature ranging from 500 to 600° C. for about 5 to 30 minutes. The temperature may be elevated to the calcination temperature at a rate of 30 to 80° C./min, preferably about 40° C./min.
The inventive heat-generating thick film has a low resistance ranging from about 0.1 to 30 Ω/mm2 and an operating temperature ranging from room temperature to 300° C., and can be heated-up quickly to about 200° C. (i.e., a temperature conventionally required for operating various electric or electronic equipments) in about 5 to 15 seconds. Therefore, the inventive heat-generating thick layer may be beneficially employed in various electronic and electrical equipments comprising a heat-generating means, e.g., a thermal head.
The following Examples are given for the purpose of illustration only and are not intended to limit the scope of the invention.
A powder mixture was prepared as represented in Table 4.
TABLE 4 | |
Amounts | |
Components | (parts by weight) |
Particles of Pb2Ru2O6-7 having an average diameter of | 10 |
0.05 μm and a specific surface area of 10 m2/g | |
Particles of RuO2 having an average diameter of 0.03 | 13 |
μm and a specific surface area of 23 m2/g | |
Ag particles having an average diameter of 1 μm and a | 20 |
maximum particle size of 3 μm | |
Glass Frit A* particles having an average diameter of 1 | 30 |
μm and a maximum particle size of 3.6 μm | |
*Glass Frit A: Bi2O3 68.9 wt %, SiO2 10.0 wt %, B2O3 11.8 wt %, BaO 6.5 wt % and Al2O3 2.8 wt %, a softening point of 460° C. and a thermal expansion coefficient of 90 × 10−7/K |
Then, 92 parts by weight of the powder mixture and 8 parts by weight of ethyl cellulose were added to terepineol, the viscosity of the resulting mixture was adjusted to about 150,000 cp, and then, compounded using a three screw roller, to obtain a resistive paste composition.
The paste composition was screen-printed on a substrate made of 96% alumina and dried at 150° C. for 10 minutes to obtain a 2.5 cm×2.5 cm resistive film having a thickness of 23 μm. The resistive film was heated to 550° C. at a rate of 40° C./min and maintain at 550° C. for 20 minutes to form a resistive layer a thickness of 6 μm on the substrate.
On the both end of the resistive layer thus obtained, electrode layers having a thickness of 10 μm were formed by a conventional method, and then, in order to protect the electrode layers, a protective glass layer was formed using a glass composition comprising 70 wt % of a glass frit consisted of 85 wt % of PbO, 5 wt % of SiO2 and 10 wt % of B2O3 (a softening point of 305° C., an average particle size of less then about 3 μm and a maximul particle size of about 10 μm or less) and 30 wt % of an organic vehicle, to prepare a thick film heat-generating element.
The thick film heat-generating element thus obtained was found to have a resistance of 12 Ω/mm2, and to require 12 seconds for it to reach 200° C. when AC 110 V was applied to the electrodes.
The procedure of Example 1 was repeated except for using a powder mixture having the composition shown in Table 5.
TABLE 5 | |
Amounts | |
Components | (parts by weight) |
Particles of Pb2Ru2O6-7 having an average diameter of | 10 |
0.05 μm and a specific surface area of 10 m2/g | |
Particles of RuO2 having an average diameter of 0.03 μm | 13 |
and a specific surface area of 23 m2/g | |
Plate-shaped Ag particles having an average diameter | 20 |
of 3 μm and a maximum particle size of 8 μm | |
Glass Frit A* particles having an average diameter of 1 | 30 |
μm and a maximum particle size of 3.6 μm | |
*Glass Frit A: Bi2O3 68.9 wt %, SiO2 10.0 wt %, B2O3 11.8 wt %, BaO 6.5 wt % and Al2O3 2.8 wt %, a softening point of 460° C. and a thermal expansion coefficient of 90 × 10−7/K |
The resistive thick film had a thickness of 5 μm and the heat-generating element was found to have a resistance of 6 Ω/mm2, and to require 6 seconds for it to reach 200° C. when AC 110 V was applied to the electrodes.
The procedure of Example 2 was repeated except for using a powder mixture having the composition shown in Table 6.
TABLE 6 | |
Amounts | |
Components | (parts by weight) |
Particles of Pb2Ru2O6-7 having an average diameter of | 10 |
0.05 μm and a specific surface area of 8 m2/g | |
Particles of RuO2 having an average diameter of 0.03 | 13 |
μm and a specific surface area of 23 m2/g | |
Plate-shaped Ag particles having an average diameter | 20 |
of 3 μm and a maximum particle size of 8 μm | |
Glass Frit B** particles having an average diameter of | 30 |
1 μm and a maximum particle size of 3.6 μm | |
**Glass Frit B: PbO 72 wt %, SiO2 5 wt %, B2O3 10 wt %, TiO2 3 wt % and Al2O3 10 wt %, a softening point of 460° C. and a thermal expansion coefficient of 90 × 10−7/K |
The resistive thick film had a thickness of 5 μm and the heat-generating element was found to have a resistance of 25 Ω/mm2, and to require 12 seconds for it to reach 200° C. when AC 220 V was applied to the electrodes.
The procedure of Example 1 was repeated except for using a powder mixture having the composition shown in Table 7.
TABLE 7 | |
Amounts | |
Components | (parts by weight) |
Particles of Pb2Ru2O6-7 having an average diameter of | 0 |
0.05 μm and a specific surface area of 8 m2/g | |
Particles of RuO2 having an average diameter of 0.03 | 0 |
μm and a specific surface area of 23 m2/g | |
Ag particles having an average diameter of 1 μm and | 40 |
a maximum particle size of 3 μm | |
Glass Frit A* particles having an average diameter of | 33 |
1 μm and a maximum particle size of 3.6 μm | |
*Glass Frit A: Bi2O3 68.9 wt %, SiO2 10.0 wt %, B2O3 11.8 wt %, BaO 6.5 wt % and Al2O3 2.8 wt %, a softening point of 460° C. and a thermal expansion coefficient of 90 × 10−7/K |
The resistive thick film had a thickness of 4 μm and the heat-generating element was found to have a resistance of 480 Ω/mm2, and to break down when AC 110 V was applied to the electrodes.
The procedure of Example 3 was repeated except for using a powder mixture having the composition shown in Table 8.
TABLE 8 | |
Amounts | |
Components | (parts by weight) |
Particles of Pb2Ru2O6-7 having an average diameter of | 10 |
0.8 μm and a specific surface area of 2 m2/g | |
Particles of RuO2 having an average diameter of 0.5 | 13 |
μm and a specific surface area of 4 m2/g | |
Plate-shaped Ag particles having an average diameter | 20 |
of 3 μm and a maximum particle size of 8 μm | |
Glass Frit B** particles having an average diameter | 33 |
of 1 μm and a maximum particle size of 3.6 μm | |
**Glass Frit B: PbO 72 wt %, SiO2 5 wt %, B2O3 10 wt %, TiO2 3 wt % and Al2O3 10 wt %, a softening point of 460° C. and a thermal expansion coefficient of 90 × 10−7/K |
The resistive thick film had a thickness of 8 μm and the heat-generating element was found to have a resistance of 25 kΩ/mm2, and to require 10 minutes and 30 seconds for it to reach 200° C. when AC 110 V was applied to the electrodes.
The procedure of Example 1 was repeated except for using a powder mixture having the composition shown in Table 9.
TABLE 9 | |
Amounts | |
Components | (parts by weight) |
Particles of Pb2Ru2O6-7 having an average diameter of | 10 |
0.05 μm and a specific surface area of 8 m2/g | |
Particles of RuO2 having an average diameter of 0.03 | 13 |
μm and a specific surface area of 23 m2/g | |
Ag particles having an average diameter of 1 μm and | 20 |
a maximum particle size of 3 μm | |
Glass Frit C*** particles having an average diameter | 30 |
of 1 μm and a maximum particle size of 3.6 μm | |
***Glass Frit C: PbO 53 wt %, SiO2 15 wt %, B2O3 10 wt % and Al2O3 27 wt %, a softening point of 580° C. and a thermal expansion coefficient of 69 × 10−7/K |
The resistive thick film had a thickness of 8 μm and the heat-generating element was found to have a resistance of 4.3 kΩ/mm2, and to require 5 minutes and 15 seconds for it to reach 200° C. when AC 110 V was applied to the electrodes. Further, the thick film was broken so that the calcined film cannot be obtained.
While the invention has been described in connection with the above specific embodiments, it should be recognized that various modifications and changes may be made to the invention by those skilled in the art without departing from the scope of the invention as defined by the appended claims.
Claims (11)
1. A resistive paste composition for the formation of an electrically heat-generating layer, which comprises (a) 5 to 75% by weight of particles of ruthenium(Ru) metal or an oxide thereof having a specific surface area of 5 to 30 m2/g, (b) 5 to 75% by weight of particles of silver(Ag) metal or a compound thereof having an average particle size of 0.1 to 3 μm; the maximum particle size not exceeding 7 μm, (c) 5 to 40% by weight of a glass frit powder having a softening point of 400 to 550° C. and (d) 5 to 45% by weight of an organic binder, the glass frit comprising 40 to 90 wt % of Bi2O3, 5 to 30 wt % of SiO2, 5 to 30 wt % of B2O3, and 2 to 40 wt % of BaO.
2. The resistive paste composition of claim 1 , wherein the oxide of ruthenium is selected from the group consisting of RuO2, GdBiRu2O6-7, Pb2Ru2O6-7, Co2Ru2O6-7, PbBiRu2O6-7, CuxBi2−xRu2O6-7 (0<x<1), Bi2RuO6-7 and a mixture thereof.
3. The resistive paste composition of claim 1 , wherein the Ru component (a) has an average particle size of 0.01 to 0.1 μm.
4. The resistive paste composition of claim 1 , wherein the Ag component (b) is in the form of plate-shaped particles.
5. The resistive paste composition of claim 1 , wherein the Ag component (b) has a specific surface area of 0.5 to 3.5 m2/g.
6. The resistive paste composition of claim 1 , wherein the glass frit further comprises 40 to 90 wt % of PbO, 0 to 10 wt % of TiO2 and 0 to 20 wt % of Al2O3.
7. The resistive paste composition of claim 1 , wherein the glass frit has an average particle size of 0.2 to 5 μm, the maximum particle size not exceeding 10 μm.
8. A heat-generating thick film layer deposited on an insulating substrate which is obtained by coating the resistive paste composition of claim 1 and calcining the coated layer at a temperature ranging from 500 to 600° C.
9. The heat-generating film of claim 8 , which has a low resistance of about 0.1 to 30 Ω/mm2.
10. The heat-generating film of claim 8 , which reaches 200° C. in 5 to 15 seconds.
11. The heat-generating film of claim 8 , wherein the substrate is selected from the group consisting of stainless steel, ceramics and glass.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990058533A KR20000012663A (en) | 1999-12-17 | 1999-12-17 | Composition of low temperature fired resistive paste for electric heater and fabricating method thereof |
KR99-58533 | 1999-12-17 | ||
KR10-2000-0051585A KR100369565B1 (en) | 1999-12-17 | 2000-09-01 | Resistive paste composition for the formation of electrically heat-generating layer |
KR00-51585 | 2000-09-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
US6406646B1 true US6406646B1 (en) | 2002-06-18 |
Family
ID=26636480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/739,545 Expired - Lifetime US6406646B1 (en) | 1999-12-17 | 2000-12-15 | Resistive paste for the formation of electrically heat-generating thick film |
Country Status (3)
Country | Link |
---|---|
US (1) | US6406646B1 (en) |
JP (1) | JP3423932B2 (en) |
KR (1) | KR100369565B1 (en) |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030122257A1 (en) * | 2001-06-28 | 2003-07-03 | Kazuto Onami | Electrically conductive paste and semiconductor device prepared by using the paste |
US20030227008A1 (en) * | 2002-06-07 | 2003-12-11 | Kimiharu Anao | Conductive paste |
US20040124400A1 (en) * | 2002-10-17 | 2004-07-01 | Noritake Co., Limited | Conductor compositions and use thereof |
US6763712B1 (en) * | 2000-10-05 | 2004-07-20 | Ford Global Technologies, Llc | Flow-sensing device and method for fabrication |
US20050116203A1 (en) * | 2002-04-10 | 2005-06-02 | Katsuhiko Takahashi | Conductive composition, conductive film, and process for the formation of the film |
US20060043345A1 (en) * | 2004-09-01 | 2006-03-02 | Tdk Corporation | Thick-film resistor paste and thick-film resistor |
EP1713094A2 (en) * | 2005-04-14 | 2006-10-18 | E.I.Du pont de nemours and company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US20060231806A1 (en) * | 2005-03-09 | 2006-10-19 | Barker Michael F | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
US20070001607A1 (en) * | 2005-06-29 | 2007-01-04 | Yong-Woo Cho | Method for manufacturing a conductive composition and a rear substrate of a plasma display |
US20080035895A1 (en) * | 2004-02-26 | 2008-02-14 | Kozo Ogi | Silver powder and method for producing same |
US7381353B2 (en) * | 2005-03-09 | 2008-06-03 | E.I. Du Pont De Nemours And Company | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
US20080146016A1 (en) * | 2004-03-09 | 2008-06-19 | Ingo Schwirtlich | Method for Forming a Structure |
US20080157033A1 (en) * | 2005-03-09 | 2008-07-03 | Baker Michael F | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
US20080224102A1 (en) * | 2006-05-04 | 2008-09-18 | Ji-Yeon Lee | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
US20090001328A1 (en) * | 2006-02-02 | 2009-01-01 | Takuya Konno | Paste for Solar Cell Electrode and Solar Cell |
US20090029852A1 (en) * | 2005-05-02 | 2009-01-29 | Alfred Hagemeyer | Molybdenum Compositions And Methods of Making the Same |
US20110309312A1 (en) * | 2009-02-25 | 2011-12-22 | Noritake Co., Limited | Paste composition for solar cell electrode |
WO2012091901A1 (en) | 2010-12-28 | 2012-07-05 | E. I. Du Pont De Nemours And Company | Improved thick film resistive heater compositions comprising silver and ruthenium dioxide, and methods of making same |
CN106816204A (en) * | 2017-01-12 | 2017-06-09 | 东莞珂洛赫慕电子材料科技有限公司 | A kind of slurry for being adapted to aluminium nitride base material and preparation method thereof |
CN108604475A (en) * | 2016-02-17 | 2018-09-28 | 纳美仕有限公司 | Conductive paste |
WO2020028999A1 (en) * | 2018-08-06 | 2020-02-13 | 苏州速腾电子科技有限公司 | Resistance paste for chip resistor and preparation method therefor |
US10832838B1 (en) * | 2017-03-28 | 2020-11-10 | Sumitomo Metal Mining Co., Ltd. | Ruthenium oxide powder, thick film resistor composition, thick film resistor paste, and thick film resistor |
US10893578B2 (en) | 2017-10-11 | 2021-01-12 | Samsung Electronics Co., Ltd. | Composition for forming a heating element and method of preparing the composition |
CN114101827A (en) * | 2021-11-22 | 2022-03-01 | 广东国研新材料有限公司 | Ceramic heating element electrode brazing process |
CN114999752A (en) * | 2022-05-27 | 2022-09-02 | 广东新成科技实业有限公司 | NTC patch thermistor based on semiconductor material and preparation method thereof |
CN115516578A (en) * | 2020-05-01 | 2022-12-23 | 住友金属矿山株式会社 | Thick film resistor paste, thick film resistor, and electronic component |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101051375B1 (en) * | 2008-09-26 | 2011-07-22 | (주) 나노팩 | Titanium dioxide sol manufacturing apparatus and method and paste composition using same |
KR20120119087A (en) * | 2011-04-20 | 2012-10-30 | (주)피엔유에코에너지 | Heating apparatus with self-regulation plane heating element and method for manufacturing the same |
KR20120119066A (en) * | 2011-04-20 | 2012-10-30 | (주)피엔유에코에너지 | Electric water heater with self-regulation plane heating element and method for manufacturing the same |
KR20120119103A (en) * | 2011-04-20 | 2012-10-30 | (주)피엔유에코에너지 | Electric pad with self-regulation plane heating element and method for manufacturing the same |
KR20120121041A (en) * | 2011-04-26 | 2012-11-05 | (주)피엔유에코에너지 | Planar heat element composition comprising resistance component having particular specific surface and planar heat element using the composition |
KR20120121037A (en) * | 2011-04-26 | 2012-11-05 | (주)피엔유에코에너지 | Planar heat element composition having a particular temperature coefficient of resistance and planar heat element using the composition |
JP6167880B2 (en) * | 2013-12-05 | 2017-07-26 | 東芝ライテック株式会社 | Heater and image forming apparatus |
JP2015193709A (en) * | 2014-03-31 | 2015-11-05 | 太陽インキ製造株式会社 | Conductive resin composition and conductive circuit |
KR101739744B1 (en) * | 2015-08-13 | 2017-05-25 | 대주전자재료 주식회사 | Lead-free thick film resistor composition, resistor and method thereof |
CN107393624A (en) * | 2017-06-29 | 2017-11-24 | 广州市尤特新材料有限公司 | A kind of LOW E glass electrocondution slurries and preparation method thereof |
JP6966717B2 (en) * | 2017-08-25 | 2021-11-17 | 住友金属鉱山株式会社 | Thick film resistor composition and thick film resistance paste containing it |
JP7139691B2 (en) * | 2017-09-22 | 2022-09-21 | 住友金属鉱山株式会社 | Composition for thick film resistor, thick film resistor paste and thick film resistor |
CN110634637B (en) * | 2017-10-23 | 2021-06-22 | 潮州三环(集团)股份有限公司 | Thick film resistor paste with resistance value range of 1M omega/□ -10M omega/□ and preparation method thereof |
JP7347057B2 (en) * | 2019-09-18 | 2023-09-20 | 住友金属鉱山株式会社 | Composition for thick film resistor and paste for thick film resistor |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4362656A (en) * | 1981-07-24 | 1982-12-07 | E. I. Du Pont De Nemours And Company | Thick film resistor compositions |
US4476039A (en) * | 1983-01-21 | 1984-10-09 | E. I. Du Pont De Nemours And Company | Stain-resistant ruthenium oxide-based resistors |
US5162062A (en) * | 1991-06-17 | 1992-11-10 | E. I. Du Pont De Nemours And Company | Method for making multilayer electronic circuits |
US5510823A (en) * | 1991-03-07 | 1996-04-23 | Fuji Xerox Co., Ltd. | Paste for resistive element film |
US5900295A (en) * | 1996-03-25 | 1999-05-04 | Fuji Electric Co., Ltd. | Fixing roller for electrophotographic device and method for fabricating the same |
US6174462B1 (en) * | 1998-01-20 | 2001-01-16 | Denso Corporation | Conductive paste composition including conductive metallic powder |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4160227A (en) * | 1977-03-18 | 1979-07-03 | Hitachi, Ltd. | Thermistor composition and thick film thermistor |
US4312770A (en) * | 1979-07-09 | 1982-01-26 | General Motors Corporation | Thick film resistor paste and resistors therefrom |
JPS6124101A (en) * | 1984-07-13 | 1986-02-01 | 住友金属鉱山株式会社 | Thick film conductive paste |
KR940002965B1 (en) * | 1989-03-23 | 1994-04-09 | 이. 아이. 듀우판 드 네모아 앤드 캄파니 | Thick film low-end resistor compositions |
JPH04209503A (en) * | 1990-12-05 | 1992-07-30 | Mitsubishi Materials Corp | Method for trimming resistor |
-
2000
- 2000-09-01 KR KR10-2000-0051585A patent/KR100369565B1/en not_active IP Right Cessation
- 2000-12-15 US US09/739,545 patent/US6406646B1/en not_active Expired - Lifetime
- 2000-12-18 JP JP2000383720A patent/JP3423932B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4362656A (en) * | 1981-07-24 | 1982-12-07 | E. I. Du Pont De Nemours And Company | Thick film resistor compositions |
US4476039A (en) * | 1983-01-21 | 1984-10-09 | E. I. Du Pont De Nemours And Company | Stain-resistant ruthenium oxide-based resistors |
US5510823A (en) * | 1991-03-07 | 1996-04-23 | Fuji Xerox Co., Ltd. | Paste for resistive element film |
US5162062A (en) * | 1991-06-17 | 1992-11-10 | E. I. Du Pont De Nemours And Company | Method for making multilayer electronic circuits |
US5900295A (en) * | 1996-03-25 | 1999-05-04 | Fuji Electric Co., Ltd. | Fixing roller for electrophotographic device and method for fabricating the same |
US6174462B1 (en) * | 1998-01-20 | 2001-01-16 | Denso Corporation | Conductive paste composition including conductive metallic powder |
Cited By (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6763712B1 (en) * | 2000-10-05 | 2004-07-20 | Ford Global Technologies, Llc | Flow-sensing device and method for fabrication |
US6733695B2 (en) * | 2001-06-28 | 2004-05-11 | Sumitomo Bakelite Company Ltd. | Electrically conductive paste and semiconductor device prepared by using the paste |
US20030122257A1 (en) * | 2001-06-28 | 2003-07-03 | Kazuto Onami | Electrically conductive paste and semiconductor device prepared by using the paste |
US20050116203A1 (en) * | 2002-04-10 | 2005-06-02 | Katsuhiko Takahashi | Conductive composition, conductive film, and process for the formation of the film |
US7771627B2 (en) * | 2002-04-10 | 2010-08-10 | Fujikura Ltd. | Conductive composition |
US20030227008A1 (en) * | 2002-06-07 | 2003-12-11 | Kimiharu Anao | Conductive paste |
US6733696B2 (en) * | 2002-06-07 | 2004-05-11 | Murata Manufacturing Co., Ltd. | Conductive paste |
US20040124400A1 (en) * | 2002-10-17 | 2004-07-01 | Noritake Co., Limited | Conductor compositions and use thereof |
US7037448B2 (en) * | 2002-10-17 | 2006-05-02 | Noritake Co., Limited | Method of producing a conductor paste |
US20080035895A1 (en) * | 2004-02-26 | 2008-02-14 | Kozo Ogi | Silver powder and method for producing same |
US7790508B2 (en) * | 2004-03-09 | 2010-09-07 | Schott Solar Ag | Method for forming a structure |
US20080146016A1 (en) * | 2004-03-09 | 2008-06-19 | Ingo Schwirtlich | Method for Forming a Structure |
US7481953B2 (en) | 2004-09-01 | 2009-01-27 | Tdk Corporation | Thick-film resistor paste and thick-film resistor |
US20060043345A1 (en) * | 2004-09-01 | 2006-03-02 | Tdk Corporation | Thick-film resistor paste and thick-film resistor |
US20080157033A1 (en) * | 2005-03-09 | 2008-07-03 | Baker Michael F | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
US7326370B2 (en) * | 2005-03-09 | 2008-02-05 | E. I. Du Pont De Nemours And Company | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
US7381353B2 (en) * | 2005-03-09 | 2008-06-03 | E.I. Du Pont De Nemours And Company | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
US20060231806A1 (en) * | 2005-03-09 | 2006-10-19 | Barker Michael F | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
US20060231803A1 (en) * | 2005-04-14 | 2006-10-19 | Yueli Wang | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US8123985B2 (en) | 2005-04-14 | 2012-02-28 | E. I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
CN101055776B (en) * | 2005-04-14 | 2012-01-04 | E.I.内穆尔杜邦公司 | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
EP1713094A3 (en) * | 2005-04-14 | 2007-03-07 | E.I.Du pont de nemours and company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US7494607B2 (en) | 2005-04-14 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US20090140217A1 (en) * | 2005-04-14 | 2009-06-04 | E. I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
EP1713094A2 (en) * | 2005-04-14 | 2006-10-18 | E.I.Du pont de nemours and company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US20110006268A1 (en) * | 2005-04-14 | 2011-01-13 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US20090029852A1 (en) * | 2005-05-02 | 2009-01-29 | Alfred Hagemeyer | Molybdenum Compositions And Methods of Making the Same |
US20090187036A1 (en) * | 2005-05-02 | 2009-07-23 | Symyx Technologies, Inc. | Nickel Compositions And Methods of Making the Same |
US20100113260A1 (en) * | 2005-05-02 | 2010-05-06 | Symyx Technologies, Inc. | Ruthenium compositions and methods of making the same |
US20070001607A1 (en) * | 2005-06-29 | 2007-01-04 | Yong-Woo Cho | Method for manufacturing a conductive composition and a rear substrate of a plasma display |
US7648730B2 (en) * | 2006-02-02 | 2010-01-19 | E.I. Du Pont De Nemours And Company | Paste for solar cell electrode and solar cell |
US20100078603A1 (en) * | 2006-02-02 | 2010-04-01 | E. I. Du Pont De Nemours And Company | Paste for solar cell electrode and solar cell |
US20090001328A1 (en) * | 2006-02-02 | 2009-01-01 | Takuya Konno | Paste for Solar Cell Electrode and Solar Cell |
US7767254B2 (en) | 2006-02-02 | 2010-08-03 | E. I. Du Pont De Nemours And Company | Paste for solar cell electrode and solar cell |
US7678296B2 (en) * | 2006-05-04 | 2010-03-16 | E. I. Du Pont De Nemours And Company | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
US20080224102A1 (en) * | 2006-05-04 | 2008-09-18 | Ji-Yeon Lee | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
CN102405530B (en) * | 2009-02-25 | 2014-08-27 | 株式会社则武 | Paste composition for solar cell electrode |
US20110309312A1 (en) * | 2009-02-25 | 2011-12-22 | Noritake Co., Limited | Paste composition for solar cell electrode |
US8512601B2 (en) * | 2009-02-25 | 2013-08-20 | Noritake Co., Limited | Paste composition for solar cell electrode |
US9431148B2 (en) | 2010-12-28 | 2016-08-30 | Ei Du Pont De Nemours And Company | Thick film resistive heater compositions comprising Ag and RuO2, and methods of making same |
US8617428B2 (en) | 2010-12-28 | 2013-12-31 | E I Du Pont De Nemours And Company | Thick film resistive heater compositions comprising Ag and RuO2, and methods of making same |
WO2012091901A1 (en) | 2010-12-28 | 2012-07-05 | E. I. Du Pont De Nemours And Company | Improved thick film resistive heater compositions comprising silver and ruthenium dioxide, and methods of making same |
CN108604475B (en) * | 2016-02-17 | 2020-09-25 | 纳美仕有限公司 | Conductive paste |
CN108604475A (en) * | 2016-02-17 | 2018-09-28 | 纳美仕有限公司 | Conductive paste |
EP3419028A4 (en) * | 2016-02-17 | 2019-08-14 | Namics Corporation | Conductive paste |
CN106816204A (en) * | 2017-01-12 | 2017-06-09 | 东莞珂洛赫慕电子材料科技有限公司 | A kind of slurry for being adapted to aluminium nitride base material and preparation method thereof |
US10832838B1 (en) * | 2017-03-28 | 2020-11-10 | Sumitomo Metal Mining Co., Ltd. | Ruthenium oxide powder, thick film resistor composition, thick film resistor paste, and thick film resistor |
US10893578B2 (en) | 2017-10-11 | 2021-01-12 | Samsung Electronics Co., Ltd. | Composition for forming a heating element and method of preparing the composition |
WO2020028999A1 (en) * | 2018-08-06 | 2020-02-13 | 苏州速腾电子科技有限公司 | Resistance paste for chip resistor and preparation method therefor |
CN115516578A (en) * | 2020-05-01 | 2022-12-23 | 住友金属矿山株式会社 | Thick film resistor paste, thick film resistor, and electronic component |
US20230167011A1 (en) * | 2020-05-01 | 2023-06-01 | Sumitomo Metal Mining Co., Ltd. | Thick film resistor paste, thick film resistor, and electronic component |
CN114101827A (en) * | 2021-11-22 | 2022-03-01 | 广东国研新材料有限公司 | Ceramic heating element electrode brazing process |
CN114101827B (en) * | 2021-11-22 | 2023-01-06 | 广东国研新材料有限公司 | Ceramic heating element electrode brazing process |
CN114999752A (en) * | 2022-05-27 | 2022-09-02 | 广东新成科技实业有限公司 | NTC patch thermistor based on semiconductor material and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2001223065A (en) | 2001-08-17 |
KR20010061925A (en) | 2001-07-07 |
JP3423932B2 (en) | 2003-07-07 |
KR100369565B1 (en) | 2003-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6406646B1 (en) | Resistive paste for the formation of electrically heat-generating thick film | |
KR910000922B1 (en) | Stain-resistant ruthenium oxide-based resistors | |
US5753571A (en) | Lead and cadmium-free encapsulant composition | |
US20130175257A1 (en) | Plane heating element using ceramic glass | |
JPS61145805A (en) | Thick film resistor composition | |
US5298330A (en) | Thick film paste compositions for use with an aluminum nitride substrate | |
US5079193A (en) | Encapsulant composition | |
JPH0450721B2 (en) | ||
JP2003257242A (en) | Thick membrane resistor paste | |
IE53251B1 (en) | Conductor compositions | |
EP0306271A1 (en) | Thick film paste compositions for use with an aluminum nitride substrate | |
US4655965A (en) | Base metal resistive paints | |
US4698265A (en) | Base metal resistor | |
US4567151A (en) | Binder glass of Bi2 O3 -SiO2 -GeO2 (-PbO optional) admixed with ZnO/ZnO and Bi2 O3 | |
JPH02188479A (en) | Dielectric composition | |
JPH0277485A (en) | Encapsulating composition | |
JP3673320B2 (en) | Pattern forming paste | |
JP2017045906A (en) | Thick film resistor paste | |
US4780248A (en) | Thick film electronic materials | |
JP2989936B2 (en) | Glass frit, resistor paste and wiring board | |
JP7295973B2 (en) | thick film resistor paste | |
JPH07133136A (en) | Glass paste and its production | |
US20090277582A1 (en) | Thick film recycling method | |
JPS62252901A (en) | Electronic circuit board with resistance unit | |
JP2017043033A (en) | Thick film resistor and thermal head |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: DAEJOO FINE CHEMICAL CO., LTD., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LEE, KI-WOONG;PARK, JONG-HYUN;CHUNG, KYUNG-WON;REEL/FRAME:011850/0450 Effective date: 20001207 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |