US6235618B1 - Method for forming nanometer-sized silicon quantum dots - Google Patents
Method for forming nanometer-sized silicon quantum dots Download PDFInfo
- Publication number
- US6235618B1 US6235618B1 US09/441,387 US44138799A US6235618B1 US 6235618 B1 US6235618 B1 US 6235618B1 US 44138799 A US44138799 A US 44138799A US 6235618 B1 US6235618 B1 US 6235618B1
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- United States
- Prior art keywords
- silicon
- thin film
- silicon nitride
- forming
- quantum dots
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- 238000000034 method Methods 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 150000003376 silicon Chemical class 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 22
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims abstract description 7
- 238000007740 vapor deposition Methods 0.000 claims abstract description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- -1 nitrogen ions Chemical class 0.000 claims abstract 3
- 238000000137 annealing Methods 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000005285 chemical preparation method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/947—Subphotolithographic processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
Definitions
- the present invention relates to a method for forming nanometer-sized silicon quantum dots; and, more particularly, to a method for forming electronically separated and nanometer-sized silicon quantum dots on a silicon substrate covered with a silicon nitride thin film by using a surface chemical reaction technique.
- a conventional method for forming nanometer-sized silicon quantum dots is using high-energy electron beams for patterning.
- it is expensive and takes long processing time to make silicon quantum dots by using high-energy electron beams.
- an object of the present invention to provide a method for forming electrically separated and highly pure silicon quantum dots on a silicon substrate covered with a silicon nitride thin film by using surface chemical reaction technique to minimize problems caused by the conventional method.
- a method for forming silicon quantum dots by using uniformly sized and distributed nanometer-sized silicon nitride islands as a mask against an oxygen gas, under vacuum conditions to eliminate any impurities in all processes.
- a silicon nitride thin film is formed.
- silicon thin film in few nanometer thick is formed by using a silicon vapor deposition technique.
- the surface of the silicon substrate is reacted with a nitrogen gas to form silicon nitride islands, few to tens of nanometer in size and single-layered in thickness, while maintaining the surface at about 800° C.
- silicon nitride is not reactive with an oxygen gas
- the silicon nitride islands are used as a mask against an oxygen gas.
- the surface of the silicon substrate is heated to 700° C. and the oxygen gas is injected to etch the silicon thin film selectively, not the portion covered with the silicon nitride islands. Therefore, the silicon quantum dots in thin film thickness can be formed by using the surface chemical reaction technique.
- FIGS. 1A to 1 E show forming processes of nanometer-sized silicon quantum dots in accordance with the present invention.
- FIG. 1 illustrates processes of forming nanometer-sized silicon quantum dots.
- FIG. 1A shows the process of forming a silicon nitride thin film and
- FIG. 1B shows the process of forming a silicon thin film by a silicon vapor deposition technique.
- FIG. 1C shows the process of forming single-layered silicon nitride islands, few to tens of nanometers in size.
- FIG. 1D shows the process of forming the silicon quantum dots capped with the silicon nitride islands, few to tens of nanometers in size.
- FIG. 1E shows the finishing process of the silicon quantum dots, few to tens of nanometers in size. All the processes are performed under 10 ⁇ 10 Torr as a base pressure and each of the detailed processes will be described hereinafter.
- the upper surface of a silicon substrate ( 11 ) is heated to 1230° C. for tens of seconds and cooled down to a room temperature. By repeating this process several times the surface is cleaned in atomic level. Then low energy N 2 + ions ( ⁇ 100 eV) are injected on the silicon substrate ( 11 ) by using an ion gun. The silicon substrate is annealed at 980° C. for several minutes so that a silicon nitride thin film ( 12 ) can be formed on the silicon substrate ( 11 ) for a surface deactivation.
- a silicon evaporator is heated to about 1300° C. in order to evaporate silicon gas in the silicon evaporator. Then the silicon substrate having the silicon nitride thin film formed thereon, maintaining about 350° C., comes close to the evaporator to form a silicon thin film ( 13 ) on top of the silicon nitride thin film ( 12 ). After the formation of the silicon nitride thin film ( 12 ) and the silicon thin film ( 13 ) on the silicon substrate ( 11 ), the resultant silicon substrate is heated to 800° C. and a nitrogen gas with a partial pressure of 1 ⁇ 10 ⁇ 5 Torr is injected to form silicon nitride islands with a uniform size distribution as shown FIG. 1 C.
- the next process is an injection of an oxygen gas (O 2 ) under a partial pressure (P O2 ) of 1 ⁇ 10 ⁇ 7 Torr on the silicon substrate to form silicon quantum dots, few to tens of nanometer in size.
- the silicon substrate is maintained at 700° C.
- the oxygen gas reacts with the silicon thin film ( 13 ) only, not the silicon nitride islands ( 14 ), for etching (Si+O 2 ⁇ SiO( ⁇ )). This reaction does not affect the silicon thin film portion with the silicon nitride islands.
- the silicon quantum dots with few to tens of nanometer in size and thin film depth in height, are formed.
- the final process is an elimination of the silicon nitride islands ( 14 ).
- the surface of the silicon substrate from the FIG. 1D is injected with CF 4 + ions of the energy of 100 ⁇ 200 eV to eliminate the silicon nitride islands.
- the silicon substrate is annealed at 900° C. to recover the surface of the silicon substrate in atomic level.
- the present invention to form the nanometer-sized silicon quantum dots uses the surface chemical reaction technique. Therefore, this invention can effectively decrease the cost and the processing time. It can also be expected to manufacture a structure with very high purity and electrically separated and nanometer-sized silicon quantum dots. Another advantage of this process is that the height of the silicon quantum dots can be uniformly formed on the silicon substrate since the deposition is done by using a silicon vapor deposition technique and the etching is done selectively by using the oxygen gas. Therefore, this invention can be easily applied to the manufacturing of a nanometer sized semiconductor device.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR98-49310 | 1998-11-17 | ||
KR1019980049310A KR100279739B1 (en) | 1998-11-17 | 1998-11-17 | How to form nanometer size silicon quantum dots |
Publications (1)
Publication Number | Publication Date |
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US6235618B1 true US6235618B1 (en) | 2001-05-22 |
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US09/441,387 Expired - Lifetime US6235618B1 (en) | 1998-11-17 | 1999-11-16 | Method for forming nanometer-sized silicon quantum dots |
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US (1) | US6235618B1 (en) |
KR (1) | KR100279739B1 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6544870B2 (en) * | 2001-04-18 | 2003-04-08 | Kwangju Institute Of Science And Technology | Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same |
US20060116002A1 (en) * | 2004-11-30 | 2006-06-01 | Kalkhoran Nader M | Surface-activation of semiconductor nanostructures for biological applications |
US20060115917A1 (en) * | 2004-11-30 | 2006-06-01 | Linden Kurt J | Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices |
CN1326209C (en) * | 2004-06-24 | 2007-07-11 | 复旦大学 | Method for doping of Si quantum dot |
US20100044635A1 (en) * | 2006-11-21 | 2010-02-25 | Craig Breen | Blue emitting semiconductor nanocrystals and compositions and devices including same |
US20100044636A1 (en) * | 2006-11-21 | 2010-02-25 | Dorai Ramprasad | Semiconductor nanocrystals and compositions and devices including same |
US7829162B2 (en) | 2006-08-29 | 2010-11-09 | international imagining materials, inc | Thermal transfer ribbon |
US20110237015A1 (en) * | 2004-11-30 | 2011-09-29 | Spire Corporation | Nanophotovoltaic devices |
US8980133B2 (en) | 2006-11-21 | 2015-03-17 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US10164205B2 (en) | 2008-04-03 | 2018-12-25 | Samsung Research America, Inc. | Device including quantum dots |
US10333090B2 (en) | 2008-04-03 | 2019-06-25 | Samsung Research America, Inc. | Light-emitting device including quantum dots |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100334344B1 (en) * | 1999-10-26 | 2002-04-25 | 김효근 | Silicon nitride film comprising amorphous silicon quantum dot nanostructure embedded therein and light emitting diode containing same |
KR100450749B1 (en) * | 2001-12-28 | 2004-10-01 | 한국전자통신연구원 | Method of manufacturing er-doped silicon nano-dot array and laser ablation apparatus used therein |
KR100485875B1 (en) * | 2002-01-02 | 2005-04-28 | 강태원 | A Manufacturing Method Of Infrared Ray Detection Element Using Hg1-XCdxTe Thin Film Of Quantum Dot Structure By Hydrogenation And Non-Active Gas |
KR100471745B1 (en) * | 2002-05-10 | 2005-03-16 | 재단법인서울대학교산학협력재단 | Method for manufacturing quantum dot |
KR100491051B1 (en) * | 2002-08-31 | 2005-05-24 | 한국전자통신연구원 | Optoelectronic device using dual structure nano dots and method for manufacturing the same |
KR100755746B1 (en) | 2006-05-22 | 2007-09-06 | 한국과학기술원 | Method for preparing quantum dot using metal binding protein and recombinant microorganisms therefor |
KR101133444B1 (en) * | 2010-02-10 | 2012-04-09 | 조선대학교산학협력단 | Method for producing of silicon quantumdot thin flim containing silicon molecular cluster |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6037243A (en) * | 1997-11-06 | 2000-03-14 | Electronics And Telecommunications Research Institute | Method for manufacturing silicon nanometer structure using silicon nitride film |
-
1998
- 1998-11-17 KR KR1019980049310A patent/KR100279739B1/en not_active IP Right Cessation
-
1999
- 1999-11-16 US US09/441,387 patent/US6235618B1/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6037243A (en) * | 1997-11-06 | 2000-03-14 | Electronics And Telecommunications Research Institute | Method for manufacturing silicon nanometer structure using silicon nitride film |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6544870B2 (en) * | 2001-04-18 | 2003-04-08 | Kwangju Institute Of Science And Technology | Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same |
CN1326209C (en) * | 2004-06-24 | 2007-07-11 | 复旦大学 | Method for doping of Si quantum dot |
US20110237015A1 (en) * | 2004-11-30 | 2011-09-29 | Spire Corporation | Nanophotovoltaic devices |
US7306963B2 (en) | 2004-11-30 | 2007-12-11 | Spire Corporation | Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices |
US20060116002A1 (en) * | 2004-11-30 | 2006-06-01 | Kalkhoran Nader M | Surface-activation of semiconductor nanostructures for biological applications |
US7524776B2 (en) | 2004-11-30 | 2009-04-28 | Spire Corporation | Surface-activation of semiconductor nanostructures for biological applications |
US20090224216A1 (en) * | 2004-11-30 | 2009-09-10 | Spire Corporation | Surface-Activation of Semiconductor Nanostructures for Biological Applications |
US8242009B2 (en) | 2004-11-30 | 2012-08-14 | Spire Corporation | Nanophotovoltaic devices |
US20060115917A1 (en) * | 2004-11-30 | 2006-06-01 | Linden Kurt J | Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices |
US7759257B2 (en) | 2004-11-30 | 2010-07-20 | Spire Corporation | Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices |
US8003551B2 (en) | 2004-11-30 | 2011-08-23 | Spire Corporation | Surface-activation of semiconductor nanostructures for biological applications |
US7829162B2 (en) | 2006-08-29 | 2010-11-09 | international imagining materials, inc | Thermal transfer ribbon |
US8980133B2 (en) | 2006-11-21 | 2015-03-17 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US8377333B2 (en) | 2006-11-21 | 2013-02-19 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US8404154B2 (en) | 2006-11-21 | 2013-03-26 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
US8691114B2 (en) | 2006-11-21 | 2014-04-08 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US8906265B2 (en) | 2006-11-21 | 2014-12-09 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
US20100044636A1 (en) * | 2006-11-21 | 2010-02-25 | Dorai Ramprasad | Semiconductor nanocrystals and compositions and devices including same |
US9444008B2 (en) | 2006-11-21 | 2016-09-13 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US9534172B2 (en) | 2006-11-21 | 2017-01-03 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
US9882083B2 (en) | 2006-11-21 | 2018-01-30 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystals and compositions and devices including same |
US20100044635A1 (en) * | 2006-11-21 | 2010-02-25 | Craig Breen | Blue emitting semiconductor nanocrystals and compositions and devices including same |
US11005058B2 (en) | 2008-04-03 | 2021-05-11 | Samsung Research America, Inc. | Light-emitting device including quantum dots |
US10164205B2 (en) | 2008-04-03 | 2018-12-25 | Samsung Research America, Inc. | Device including quantum dots |
US10333090B2 (en) | 2008-04-03 | 2019-06-25 | Samsung Research America, Inc. | Light-emitting device including quantum dots |
Also Published As
Publication number | Publication date |
---|---|
KR100279739B1 (en) | 2001-04-02 |
KR20000032755A (en) | 2000-06-15 |
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