US5450004A - Voltage generating device - Google Patents

Voltage generating device Download PDF

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Publication number
US5450004A
US5450004A US08/219,417 US21941794A US5450004A US 5450004 A US5450004 A US 5450004A US 21941794 A US21941794 A US 21941794A US 5450004 A US5450004 A US 5450004A
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United States
Prior art keywords
voltage
current
generating device
semiconductor device
resistors
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Expired - Fee Related
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US08/219,417
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English (en)
Inventor
Masaharu Ikeda
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • the present invention relates to a voltage generating device which generates a voltage which does not depending upon the temperature.
  • Such type of prior art voltage generating devices comprises a voltage source including a semiconductor PN junction for generating a voltage which negatively changes with temperature and a voltage source for generating a thermal voltage (kT/q) which positively changes with temperature, both voltage sources being connected in series for cancelling the changes in voltage with temperature with each other.
  • FIG. 1 The structure of a prior art voltage generating device is shown in FIG. 1.
  • a reference numeral 1 denotes an output terminal of a voltage generating device
  • 21 denotes a current source
  • 22 a resistor
  • 23 a diode-like connected transistor.
  • a voltage on the output terminal 1 is obtained by causing a current to flow from the current source 21 through the series-connected resistor 22 and diode 23.
  • the current source, 21 is a band gap current source as disclosed in JP-A-60-191508.
  • the current value Ics is determined by equation (1).
  • k denotes the Boltzmann's constant
  • T denotes an absolute temperature
  • q denotes the charge of electrons
  • N denotes a constant
  • Rcs denotes a current presetting resistance
  • the voltage Vo on the output terminal 1 can be expressed by equation (2).
  • the first clause in equation (2) denotes the forward voltage of the diode-like connected transistor 23. It is generally well known that this voltage changes at -2 mV/deg with temperature when it is about 650 mV. Therefore, a change in voltage with temperature in the second clause is preset to a value which has the opposite sign, and is equal to the absolute value of that in the first clause thus, the changes in voltage with temperature in the first and second clauses can be cancelled with each other.
  • equation (2) is put into the second clause to provide equation (3). ##EQU1## A change in voltage with temperature is obtained by differentiating equation (3) with respect to the absolute temperature T. If the change is represented by +2 mV, equation (4) is obtained. ##EQU2##
  • Vo is determined as about 1.25 V in accordance with equation (2). Vo is independent of temperature. This approach has been widely adopted since the thermal coefficients of R22 and Rcs can be easily made equal if these components are formed on a single semiconductor chip.
  • the prior art voltage generating device is capable of generating a voltage which is independent of temperature.
  • the prior art voltage generating device can not be used for a circuit which requires a power source voltage which is lower than 1.25 V since the voltage which is independent of temperature only down to voltage of 1.25 V.
  • the first clause in equation (2) is fixed as 650 mV
  • the second clause should be equal or lower than 600 mV. Accordingly, Vo is dependent upon temperature for values below 1.25 V.
  • the present invention aims at solving the above mentioned problems of the prior art. It is therefore an object of the present invention to provide an excellent voltage generating device which is capable of providing a voltage which is independent of temperature even if a power source voltage is not greater than 1.25 V.
  • the present invention provides a voltage generating device comprising: a diode; biasing means for generating a forward voltage across the diode; voltage dividing means for dividing the forward voltage which is generated by the biasing means; and current generating means for causing a current to flow through a divided voltage output of the voltage dividing means; wherein a voltage which is independent of temperature can be obtained even if the power source voltage is equal to or less than 1.25 V.
  • the present invention further provides a voltage generating device comprising: a diode; voltage dividing means for dividing a terminal voltage across the diode; and current generating means for causing a current to flow through a divided voltage output of the voltage dividing means; wherein a voltage which is independent of temperature can be obtained even if a power source voltage is equal to or less than 1.25 V.
  • the forward voltage which negatively changes with the temperature which is obtained by causing the forward current to flow through the diode from the biasing means is divided by the voltage dividing means and a voltage which positively changes with temperature is properly superposed upon the divided forward voltage by the current generating means and the voltage dividing means.
  • a voltage which is independent of temperature can be obtained even if the power source voltage is equal to or less than 1.25 V.
  • the output voltage Vo is preset equal to or less than 0.7 V and the current generating means is formed of a low voltage operating type source, as is disclosed in JP-A-60-191508, the power source voltage can be lowered to 0.9 V and the device can be easily formed of a semiconductor integrated circuit.
  • the forward voltage which negatively changes with the temperature which is obtained by causing a forward current to flow through the diode and the voltage dividing means from the current generating means, is divided by the voltage dividing means and a voltage which positively changes with temperature is properly superposed upon the divided forward voltage by the current generating means and the voltage dividing means.
  • the current generating means is formed of a low voltage operating type source, as is disclosed in JP-A-60-191508, the power source voltage can be lowered to the output voltage Vo to about 0.2 V and the device can be easily formed of a semiconductor integrated circuit.
  • FIG. 1 is a circuit diagram showing a prior art voltage generating device
  • FIG. 2A is a circuit diagram showing a first embodiment of a voltage generating device of the present invention.
  • FIG. 2B is an equivalent circuit diagram showing a part of the device of FIG. 2A, including a current source and a transistor;
  • FIG. 2C is an equivalent circuit diagram showing a part of the device of FIG. 2A, including the current sources, the transistor and resistors;
  • FIG. 3 is a circuit diagram showing a second embodiment of a voltage generating device of the present invention.
  • FIGS. 2A to 2C there is shown the structure of a first embodiment of the present invention.
  • a reference numeral 1 denotes an output terminal of a voltage generating device
  • 11 and 15 denote current sources
  • 13 and 14 denote resistors
  • 12 denotes a diode-like connected transistor (i.e. a semiconductor device having a PN junction).
  • a voltage on the output terminal 1 is obtained by causing a current to flow through series-connected resistors 13 and 14.
  • the current sources 11 and 15 are formed of current Miller circuits and the like, using a band gap current source disclosed in JP-A-60-191508.
  • FIG. 2A The operation of the embodiment of FIG. 2A will be described with reference to FIGS. 2B and 2C.
  • the diode-like connected transistor or diode 12 is represented by an equivalent circuit 120 including a voltage source 121 and a resistor 122.
  • the value V121 of the voltage sources 121 and the value R122 of the resistor 122 are expressed by equations (6) and (7), respectively.
  • Vf12 and I12 denote the forward voltage of the transistor 12 and the collector current of the transistor 12, respectively.
  • the equivalent circuit 120 and the resistors 13 and 14 are represented by an equivalent circuit 130 by using Thevenin's theorem.
  • the value of V131 of the voltage source 131 and the value R132 of the resistor 132 are represented by equations (8) and (9).
  • R13 and R14 denote the resistances of the resistors 13 and 14, respectively.
  • the current source 15 will be considered.
  • a current Ics from the current source 15 is also defined by the equation (1). Since the current I15 from the current source 15 flows into the voltage source I31 through the resistor 132, an output voltage Vo on the output terminal 1 can be expressed by equation (10).
  • Equation (10) resembles equation 2 of the prior art.
  • the output voltage Vo which is independent of the temperature can be generated by an approach similar to the prior art.
  • the first clause in the parenthesis ⁇ ⁇ in equation (10) denotes the forward voltage of the diode-like connected transistor and is about 650 mV. Since this forward voltage changes at -2 mV/degree with respect to temperature, the changes in voltage with the temperatures in the first and second clauses are cancelled with each other if the R13 and Rcs are preset so that the change in voltage relative to the temperature in the second clause in the parenthesis ⁇ ⁇ is +2 mV/deg. This value is the same as the value of equation (5).
  • the output voltage Vo can be finally made independent of temperature and the level of the voltage Vo can be desiredly preset by presetting M. If the output voltage is preset to, for example, 0.5 V, M is preset to 0.5 V/1.25 V.
  • the values R13, R14, I11 and I15 of the resistors 13 and 14 and the current sources 11 and 15 can be determined in accordance with equations 6 to 10.
  • Vo is represented by the ratio of R13, R14 and the resistor Rcs which determines the current from the current source 15, so that designing of the circuit can be made easier.
  • the output voltage can be preset so as to cancel the changes in the output voltage with temperature, similarly as in the prior art and the level of the output voltage can be easily preset with a constant M.
  • the voltage on the output terminal of the current source 11 will not become equal to or greater than the forward voltage of the diode. If the voltage Vo is preset equal to or lower than the forward voltage of the diode and a low voltage operative current source, which is disclosed in JP-A-60-191508 is used, a power source can be used having a lowered to about 0.9 V.
  • the present device can be easily formed of an semiconductor integrated circuit independently of the accuracy of the absolute values of the resistors.
  • the characteristics relative to temperature can be determined by (R13+R122)/Rcs in accordance with equation (10) and thus does not depend upon R14. There is an advantage that the voltage Vo can be desiredly determined.
  • the forward voltage which is obtained from the current source 11 and the diode-like connected transistor 12 is applied to a voltage divider including resistors 13 and 14 without passing through other components, it may be applied to the voltage divider via a buffer amplifier (not shown). In this case, design of the device is made easier since R122 becomes sufficiently lower.
  • While components are preset in the first embodiment so that the output voltage Vo does not depend upon temperature, they may be preset to provide the device with a desired temperature characteristic.
  • reference numeral 1 denotes an output terminal of a voltage generating device
  • 15 denotes a current source
  • 13 and 14 denote resistors
  • 12 denotes a diode-like connected transistor (i.e. a semiconductor device having a PN junction).
  • a voltage on the output terminal 1 is obtained by causing a current to flow from the current source 15 through the series-connected resistors 13 and 14.
  • the current source 15 is made of a Miller circuit or the like, using a band gap current source as is disclosed in JP-A-60-191508.
  • the second embodiment of the present embodiment is substantially identical with the first embodiment except that the current source 11 in the first embodiment is omitted.
  • the second embodiment is effective in cases where the voltage Vo on the output terminal 1 is higher than the forward voltage of the transistor 12.
  • the current I13 flowing through the resistor 13 will flow in an opposite direction so that a bias current can be caused to flow through the transistor 12 even if no current Ill flows from the current source 11.
  • the output voltage can be preset so as to cancel the changes in the output voltage with temperature similarly to the prior art and the level of the output voltage can be easily present with a constant M.
  • the voltage on the output terminal of the current source 11 will not become equal to or higher than the forward voltage of the diode. If a low voltage operative current source, as is disclosed in JP-A-60-191508, is used a power source can be used with the voltage Vo lowered to about +0.2 V.
  • the present device can be easily formed of an semiconductor integrated circuit independently of the accuracy of the absolute values of the resistors.
  • the characteristics of the device with respect to temperature can be determined by (R13+R122)/Rcs in accordance with equation (10) and thus does not depend upon R14. There is an advantage that the value of the voltage Vo can be desiredly determined.
  • While components are preset in the second embodiment so that the output voltage Vo does not depend upon temperature, they may be preset to provide the device with a desired temperature characteristic.
  • the first embodiment of the present invention is formed so that a voltage having a level which is proportional to an absolute temperature obtained from the voltage dividing means, including a plurality of resistors and current sources, is superposed upon the forward voltage which is obtained by a current source for biasing a diode-like connected transistor in a forward direction.
  • the superposed voltage can be preset so as to cancel the changes in voltage with temperature. As a result, a voltage output which does not depend upon temperature can be obtained.
  • the level of the output voltage can be easily preset by a voltage dividing ratio of the voltage dividing means.
  • the power source voltage can be lowered to about 0.9 V.
  • the device can be easily formed of a semiconductor integrated circuit independently of the accuracy of the absolute values.
  • the second embodiment is formed so that a voltage having a level which is proportional to an absolute temperature T obtained from voltage dividing means including a plurality of resistors; and a current source is superposed upon the-forward voltage which negatively changes with temperature obtained by causing a forward current through a diode via a voltage dividing means from current generating means, the superposed voltage is preset so as to cancel changes in voltage with temperature. Accordingly, a voltage output which does not depend upon temperature can be obtained.
  • the level of the output voltage can be easily preset by a voltage dividing ratio of voltage dividing means.
  • the power source voltage can be used until the output voltage Vo is lowered to about +0.2 V.
  • the device can be easily formed of a semiconductor integrated circuit independently of the accuracy of the absolute values.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
US08/219,417 1991-10-21 1994-03-29 Voltage generating device Expired - Fee Related US5450004A (en)

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US08/219,417 US5450004A (en) 1991-10-21 1994-03-29 Voltage generating device

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JP3-272274 1991-10-21
JP27227491 1991-10-21
US96370092A 1992-10-20 1992-10-20
US08/219,417 US5450004A (en) 1991-10-21 1994-03-29 Voltage generating device

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EP (1) EP0539136B1 (de)
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030107361A1 (en) * 2001-11-15 2003-06-12 Laszlo Goetz Reference voltage source
TWI399631B (zh) * 2010-01-12 2013-06-21 Richtek Technology Corp 可快速啟動的低電壓能隙參考電壓產生器
TWI407289B (zh) * 2010-02-12 2013-09-01 Elite Semiconductor Esmt 電壓產生器以及具有此電壓產生器的溫度偵測器和振盪器

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5840008A (en) * 1995-11-13 1998-11-24 Localmed, Inc. Radiation emitting sleeve catheter and methods
DE60123925D1 (de) 2001-04-27 2006-11-30 St Microelectronics Srl Stromreferenzschaltung für niedrige Versorgungsspannungen
CN109494724B (zh) * 2018-11-22 2020-05-19 山东大学 基于lu分解的大电网戴维南等值参数在线辨识方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3956661A (en) * 1973-11-20 1976-05-11 Tokyo Sanyo Electric Co., Ltd. D.C. power source with temperature compensation
SU1025433A1 (ru) * 1982-03-15 1983-06-30 Войсковая часть 27177 Забрасываемый огнетушитель
US4459540A (en) * 1981-02-25 1984-07-10 Mitsubishi Denki Kabushiki Kaisha Constant voltage generating circuit
US4473793A (en) * 1981-03-26 1984-09-25 Dbx, Inc. Bias generator
JPS59191626A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 電圧源回路
US4490669A (en) * 1981-09-21 1984-12-25 Siemens Aktiengesellschaft Circuit configuration for generating a temperature-independent reference voltage
JPS60191508A (ja) * 1984-03-13 1985-09-30 Matsushita Electric Ind Co Ltd 電流発生装置
US4658205A (en) * 1984-08-10 1987-04-14 Nec Corporation Reference voltage generating circuit
JPS63177214A (ja) * 1987-01-19 1988-07-21 Sanyo Electric Co Ltd 基準電圧発生回路
EP0379092A1 (de) * 1989-01-20 1990-07-25 Nec Corporation Spannungsgeneratorschaltung
JPH02193410A (ja) * 1989-01-20 1990-07-31 Matsushita Electric Ind Co Ltd 比較装置
US5168210A (en) * 1990-11-02 1992-12-01 U.S. Philips Corp. Band-gap reference circuit

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3956661A (en) * 1973-11-20 1976-05-11 Tokyo Sanyo Electric Co., Ltd. D.C. power source with temperature compensation
US4459540A (en) * 1981-02-25 1984-07-10 Mitsubishi Denki Kabushiki Kaisha Constant voltage generating circuit
US4473793A (en) * 1981-03-26 1984-09-25 Dbx, Inc. Bias generator
US4490669A (en) * 1981-09-21 1984-12-25 Siemens Aktiengesellschaft Circuit configuration for generating a temperature-independent reference voltage
SU1025433A1 (ru) * 1982-03-15 1983-06-30 Войсковая часть 27177 Забрасываемый огнетушитель
JPS59191626A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 電圧源回路
JPS60191508A (ja) * 1984-03-13 1985-09-30 Matsushita Electric Ind Co Ltd 電流発生装置
US4658205A (en) * 1984-08-10 1987-04-14 Nec Corporation Reference voltage generating circuit
JPS63177214A (ja) * 1987-01-19 1988-07-21 Sanyo Electric Co Ltd 基準電圧発生回路
EP0379092A1 (de) * 1989-01-20 1990-07-25 Nec Corporation Spannungsgeneratorschaltung
JPH02193410A (ja) * 1989-01-20 1990-07-31 Matsushita Electric Ind Co Ltd 比較装置
US5013999A (en) * 1989-01-20 1991-05-07 Nec Corporation Voltage generating circuit using a Schottky barrier diode
US5168210A (en) * 1990-11-02 1992-12-01 U.S. Philips Corp. Band-gap reference circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030107361A1 (en) * 2001-11-15 2003-06-12 Laszlo Goetz Reference voltage source
US6737848B2 (en) * 2001-11-15 2004-05-18 Texas Instruments Incorporated Reference voltage source
TWI399631B (zh) * 2010-01-12 2013-06-21 Richtek Technology Corp 可快速啟動的低電壓能隙參考電壓產生器
TWI407289B (zh) * 2010-02-12 2013-09-01 Elite Semiconductor Esmt 電壓產生器以及具有此電壓產生器的溫度偵測器和振盪器

Also Published As

Publication number Publication date
EP0539136A2 (de) 1993-04-28
EP0539136A3 (en) 1993-08-11
DE69224136T2 (de) 1998-07-16
EP0539136B1 (de) 1998-01-21
DE69224136D1 (de) 1998-02-26

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