US5199053A - Charge transfer device output - Google Patents

Charge transfer device output Download PDF

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US5199053A
US5199053A US07/911,936 US91193692A US5199053A US 5199053 A US5199053 A US 5199053A US 91193692 A US91193692 A US 91193692A US 5199053 A US5199053 A US 5199053A
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diffusion region
voltage signal
pulse voltage
floating diffusion
charge
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Masahide Hirama
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Sony Corp
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Sony Corp
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Priority claimed from JP17263491A external-priority patent/JP3208791B2/ja
Priority claimed from JP3172633A external-priority patent/JPH0520892A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals

Definitions

  • the present invention relates to CCD (charge coupled device) linear sensor, CCD imaging devices such as a CCD linear sensor and CCD elements such as other devices utilizing CCDs or the like.
  • CCD charge coupled device
  • FIG. 1 of the accompanying drawings shows a structure of a final stage portion of a horizontal transfer register of a conventional CCD imaging device and an output section thereof.
  • a horizontal transfer register 1 has a plurality of arrays of transfer sections 4 each composed of transfer electrodes, i.e., a storage electrode 3S and a transfer electrode 3T formed on a major surface of a semiconductor substrate 2 via an insulating layer, and transfers signal charges in the horizontal direction by means of two-phase drive pulses ⁇ H 1 and ⁇ H 2 (see FIGS. 2A and 2B).
  • the transfer section 4 at the final stage of the horizontal transfer register 1 is connected to a floating diffusion region 7 via a horizontal output gate section 5 to which there is applied a fixed gate voltage V HOG .
  • the signal charge from the horizontal transfer register 1 is transferred to the floating diffusion region 7, in which it is converted in the form of charge to voltage and then output from an output amplifier 8.
  • a reset gate section 11 to which a reset pulse ⁇ RG (see FIG, 2C) is applied is formed between the floating diffusion region 7 and a reset drain region 10 in order to drain out the signal charge transferred to the floating diffusion region 7 to the reset drain region 10 to which there is applied a predetermined voltage V RD (see FIG. 2D).
  • the CCD output becomes a potential (i.e., field-through potential) b which is lower than a reference potential (i.e., reset potential) a.
  • a difference between the reference potential a and the field-through potential b is rendered a so-called coupling amount A 1 which is caused by the parasitic capacitance C 1 .
  • the parasitic capacitance C 1 is reduced in proportional to a capacity associated with the floating diffusion region 7 as the CCD imaging device is increased in sensitivity. More specifically, if the parasitic capacitance C 1 is not reduced, then the coupling amount A 1 is relatively increased, resulting in a dynamic range of a signal component being reduced. As shown in a diagram of potentials in FIG. 3, the potential in the floating diffusion region 7 after the reset gate section 11 is turned off is lowered (shown by a solid line) from the potential V RD (shown by a dashed line) of the reset drain region 10. As a result, signal charges are difficult to be transferred to the floating diffusion region 7 and the amount of signal charges to be transferred is reduced. A potential difference B 1 in FIG. 3 corresponds to the coupling amount A 1 in the waveform of the CCD output.
  • a CCD linear sensor is arranged such that signal charges of odd-numbered photo sensing elements (pixels) and even-numbered photo sensing elements (pixels) are transferred to two charge transfer registers in a divided fashion and then output from the final stage in the mixed form.
  • first and second horizontal transfer registers 24 and 25 each being formed of a CCD are disposed on respective sides of a photo sensing region 21 having an array composed of a plurality of photo sensing elements (pixels) S (S 1 , S 2 , S 3 , . . . ) through read-out gate sections 22 and 23.
  • Signal charges of the odd-numbered photo sensing elements S 1 , S 3 , S 5 , . . . are read out to the first horizontal transfer register 24 and signal charges of the even-numbered photo sensing elements S 2 , S 4 , S 6 , . . . are read out to the second horizontal transfer register 25.
  • Transfer sections HR 1 , HR 2 of the final stages are applied with independent drive pulses ⁇ H 1 ', ⁇ H 2 ' which are synchronized with the drive pulses ⁇ H 1 , ⁇ H 2 supplied to preceding transfer sections HR 1 , HR 2 .
  • the transfer sections HR 1 , HR 2 provided at the final stages of the first and second horizontal transfer registers 24, 25 are connected to a common floating diffusion region 27 via a common horizontal output gate section 26 to which there is applied a gate voltage V HOG .
  • signal charges read out from the even-numbered and even-numbered photo sensing elements and transferred by the first and second horizontal transfer registers 24, 25 are added together by the floating diffusion region 27, that is, the odd-numbered and even-numbered signal charges are alternately transferred to the common floating diffusion region 27, in which they are converted in the form of charge to voltage and then signals corresponding to odd-numbered and even-numbered pixels are sequentially and alternately output from an output amplifier 28 as shown by a waveform of a CCD output in FIG. 5D.
  • the signal charges transferred to the floating diffusion region 27 are discharged to a reset drain region 30 through a reset gate section 29 by a reset pulse ⁇ RG which is supplied thereto and whose frequency is twice as high as those of the two-phase drive pulses ⁇ H 1 , ⁇ H 2 and ⁇ H 1 ', ⁇ H 2 ' as shown in FIG. 5C.
  • the floating diffusion region 27 is formed within a well region and the well region is interconnected to the ground.
  • the capacitance of the transfer sections HR 1 , HR 2 is large so that, when the horizontal transfer registers 24, 25 are driven by the two-phase drive pulses ⁇ H 1 , ⁇ H 2 , a well region potential (so-called reference potential) Vo is momentarily fluctuated at negative-going edges t 1 , t 2 , t 3 , . . . of the drive pulse ⁇ H 1 or ⁇ H 2 which transfers the signal charges to the floating diffusion region 27 as shown in FIG. 5, to thereby produce a fluctuated component 15. Consequently, a noise component 16 is superimposed upon the output signal on the basis of this fluctuated component 15.
  • the waveform during the signal period is not flat. Further, since the capacitance of the first transfer section HR 1 is different from that of the second transfer section HR 2 , the noise component 16 is changed, thereby resulting in a difference (so-called DC level difference) being produced in the signal level of the odd-numbered pixel and that of the even-numbered pixel.
  • Another object of the present invention is to provide a CCD imaging device which can be improved in sensitivity.
  • a further object of the present invention is to provide a CCD imaging device in which a waveform in a signal period can be made flat.
  • Yet a further object of the present invention is to provide a CCD imaging device in which a difference between signal levels of pixels can be improved.
  • Still a further object of the present invention is to provide a CCD imaging device which can produce image quality of high resolution without correcting a black signal.
  • a charge transfer device formed on a semiconductor substrate is comprised of a charge detecting section including an electrically floating diffusion region, a floating diffusion amplifier connected to the floating diffusion region, and a transistor responsive to a reset pulse voltage signal for resetting the floating diffusion region to a predetermined potential, the transistor comprising the floating diffusion region, a drain diffusion region formed in the substrate, a gate electrode connected to a source of the pule voltage signal, and a channel formed on the substrate, the channel extending between the floating diffusion region and the drain diffusion region, and charge transfer section for transferring charges to the charge detecting section, a the charge transfer section including a channel formed on the substrate, a plurality of gate electrodes insulated from the channel, and an output gate electrode formed on an end of the charge transfer section, the plurality of gate electrodes being responsive to a driving pulse voltage signal, wherein the driving pulse voltage signal having a specific phase so that a noise generated by a voltage shift of the driving pulse voltage signal overlaps on an output signal corresponding to a reset
  • a solid state linear imaging device formed on a semiconductor substrate is comprised of a plurality of photo sensing elements receiving a light and producing a charge signal corresponding to the amount of light, and a charge transfer section for receiving the charge signal from the photo sensing elements and transferring the charge signal to a charge detecting section, the charge detecting section including an electrically floating diffusion region, a floating diffusion amplifier connected to the floating diffusion region, and a transistor responsive to a reset pulse voltage signal for resetting the floating diffusion region to a predetermined potential, the transistor comprising the floating diffusion region, a drain diffusion region formed in the substrate, a gate electrode connected to a source of the pulse voltage signal, and a channel formed on the substrate, the channel extending between the floating diffusion region and the drain diffusion region, the charge transfer section including a channel formed on the substrate, a plurality of gate electrodes insulated from the channel, and an output gate electrode formed on an end of the charge transfer section, the plurality of gate electrodes being responsive to a driving pulse voltage signal, and
  • a charge transfer device formed on a semiconductor body which comprises of a charge detecting section including an electrically floating diffusion region, a floating diffusion amplifier connected to the floating diffusion region and a transistor responsive to a reset pulse voltage signal for resetting the floating diffusion region to a predetermined potential, the transistor comprising the floating diffusion region, a drain diffusion region formed in a substrate, a gate electrode connected to a source of the reset pulse voltage signal, and a channel formed on the substrate, the channel extending between the floating diffusion region and the drain diffusion region; and a charge transfer section for transferring charges to a charge detecting section, the charge transfer section including a channel formed on the substrate, a plurality of gate electrodes insulated from the channel, and an output gate electrode formed on an end of the charge transfer section, the gate electrodes consisting of a first portion responsive to a first driving pulse voltage signal and a second portion responsive to a second driving pulse voltage signal, the second portion being adjacent to the output gate electrode, wherein the first driving pulse voltage signal has
  • a solid state linear imaging device formed on a semiconductor substrate which comprises a plurality of photo sensing elements receiving a light and producing a charge signal corresponding to the amount of light, and a charge transfer section for receiving the charge signal from the photo sensing elements and transferring the charge signal to a charge detecting section, the charge detecting section including an electrically floating diffusion region, a floating diffusion amplifier connected to the floating diffusion region, and a transistor responsive to a reset pulse voltage signal for resetting the floating diffusion region to a predetermined potential, the transistor comprising the floating diffusion region, a drain diffusion region formed in the substrate, a gate electrode connected to a source of the reset pulse voltage signal, and a channel formed on the substrate, the channel extending between the floating diffusion region and the drain diffusion region, the charge transfer section including a channel formed on the substrate, a plurality of gate electrodes insulated from the channel, and an output gate electrode formed on an end of the charge transfer section, the gate electrodes consisting of a first portion responsive to a
  • a charge transfer device formed on a semiconductor body which comprises a charge detecting section including an electrically floating diffusion region, a floating diffusion amplifier connected to the floating diffusion region and a transistor responsive to a reset pulse voltage signal for resetting the floating diffusion region to a predetermined potential, the transistor comprising the floating diffusion region, a drain diffusion region formed in a substrate, a gate electrode connected to a source of the pulse voltage signal, and a channel formed on the substrate, the channel extending between the floating diffusion region and the drain diffusion region, and a charge transfer section for transferring charges to a charge detecting section, the charge transfer section including a channel formed on the substrate, a plurality of gate electrodes insulated from the channel, and an output gate electrode formed on an end of the charge transfer section, the output gate electrode being responsive to an output gate pulse voltage signal, and the output gate pulse voltage signal having an anti-phase of the reset pulse voltage signal.
  • FIG. 1 is a fragmentary side view of a structure of a main portion of a CCD imaging device according to the prior art
  • FIGS. 2A through 2E are respectively diagrams showing waveforms of pulses applied to the CCD imaging device and waveform of an output from the CCD imaging device according to the prior art
  • FIG. 3 is a diagram of potential developed in the output section according to the prior art
  • FIG. 4 is a fragmentary plan view of a structure of a CCD linear sensor according to the prior art
  • FIGS. 5A through 5E are respectively diagrams of waveforms of pulses supplied, a waveform of a CCD output or the like according to the prior-art CCD linear sensor;
  • FIG. 6 is a fragmentary side view of a structure of a final stage of a horizontal transfer register and an output section of a CCD imaging device according to a first embodiment of the present invention
  • FIGS. 7A through 7E are respectively diagrams of waveforms of pulses applied and a waveform of a CCD output of the embodiment of the present invention shown in FIG. 6;
  • FIGS. 8A through 8D are respectively diagrams of potentials developed in the horizontal charge transfer section of the present invention shown in FIG. 8 and, to which references will be made in explaining charge transfer operation;
  • FIG. 9 is a fragmentary plan view of a structure of a CCD imaging device according to a second embodiment of the present invention.
  • FIGS. 10A through 10E are respectively diagrams of waveforms of drive pulses, a reset pulse and a CCD output according to the second embodiment of the present invention.
  • FIG. 11 is a block diagram showing a circuit configuration which generates pulses to be supplied according to the second embodiment of the present invention.
  • FIG. 6 of the accompanying drawings show a structure of a final stage of a horizontal transfer register and an output section of a CCD imaging device according to a first embodiment of the present invention.
  • elements and parts identical to those of FIG. 1 are marked with the same references and therefore need not be described in detail.
  • this CCD imaging device comprises a horizontal transfer register 1 of CCD structure each having an array of a plurality of transfer sections 4 each of which has a storage electrode 3S and a transfer electrode 3T formed on a major surface of a semiconductor substrate 2 via an insulating layer (not shown) to sequentially transfer signal charges in the horizontal direction by the two-phase drive pulses ⁇ H 1 , ⁇ H 2 , a horizontal output gate section 5 connected to the final transfer section 4 of the horizontal transfer register 1, a floating diffusion region 7, an output amplifier 8 connected to the floating diffusion region 7, a reset drain region 10 and a reset gate section 11 which discharges signal charges transferred to the floating diffusion region 7 to the reset drain region 10, as shown in FIG. 6.
  • the predetermined voltage V RD is applied to the reset drain region 10 and the reset pulse ⁇ RG is applied to the reset gate section 11, respectively.
  • an output gate pulse ⁇ HOG having an anti-phase of that of the reset pulse ⁇ RG is applied to the horizontal output gate section 5 instead of the conventional fixed potential.
  • the output gate pulse ⁇ HOG having the anti-phase of that of the reset pulse ⁇ RG is applied to the horizontal output gate section 5, thereby suppressing a potential from being lowered in the floating diffusion region 7 after the reset gate 11 is turned off.
  • the coupling amount A 2 in the so-called CCD output waveform can be suppressed.
  • the reset gate section 11 when the reset gate section 11 is turned on by the application of the high level (e.g., 5 V) of the reset pulse ⁇ RG thereto, a potential V FD of the floating diffusion region 7 becomes equal to a potential V RD of the reset drain region 10.
  • the low level (e.g., 0 V) of the output gate pulse ⁇ HOG is applied to the horizontal output gate section 5.
  • the potential V FD of the floating diffusion region 7 after the reset gate section 11 is turned off by the application of the low level (e.g., 0 V) of the reset pulse ⁇ RG is lowered by the capacitive coupling of the parasitic capacitance C 1
  • the high level (e.g., 5 V) of the output gate pulse ⁇ HOG is simultaneously applied to the horizontal gate section 5 so that the potential of the floating diffusion region 7 is increased by the capacitive coupling of the parasitic capacitance C 2 . Consequently, the potential in the floating diffusion region 7 after the reset gate section 11 is turned off can be suppressed from being lowered, which can reduce the coupling amount A 2 in the waveform of the CCD output shown in FIG. 7E.
  • the coupling amount in FIG. 7E is reduced to zero and a CCD output waveform P 1 is presented as shown by a broken line in FIG. 7E. Further, the coupling amount can be reduced if the parasitic capacitance C 1 and the parasitic capacitance C 2 are not equal. If an inequality of C 1 >C 2 , for example, is satisfied, then a CCD output waveform P 2 shown by a solid line in the coupling amount A 2 in FIG. 7E is presented.
  • P 3 in FIG. 7E represents a conventional CCD output waveform obtained in FIG. 1 for comparison. While the amplitudes of the output gate pulse ⁇ HOG and the reset pulse ⁇ RG are made equal as described above, the present invention is not limited thereto and the coupling amount A 2 can be suppressed more by changing the amplitude of the output gate pulse ⁇ HOG .
  • the two-phase drive pulses ⁇ H 1 and ⁇ H 2 are applied to the transfer section 4 of the horizontal transfer register 1, the output gate pulse ⁇ HOG is applied to the horizontal output gate section 5 and the reset pulse ⁇ RG is applied to the reset gate section 11 at timings shown in FIGS. 7A through 7D, respectively.
  • the drive pulse ⁇ H 1 is high in level and the output gate pulse ⁇ HOG goes to high level so that the potential state shown in FIG. 8B is presented.
  • the signal charge e 2 remains in the portion beneath the storage electrode 3S of the final transfer section 4.
  • the drive pulse ⁇ H 1 goes to low level, bringing about the potential state shown in FIG. 8C. Then, the signal charge e 2 of the transfer section 4 is transferred to the floating diffusion region 7 and the signal component is output from the output amplifier 8.
  • the drive pulse ⁇ H 1 goes to high level, thereby presenting the potential state shown in FIG. 8D. Therefore, the next signal charge e 3 is transferred to the portion beneath the storage electrode 3S of the final transfer section 4. In this fashion, signal charges are sequentially transferred to the floating diffusion region 7 and then output from the output amplifier 8.
  • the output gate pulse ⁇ HOG having an anti-phase of the reset pulse ⁇ RG is applied to the succeeding horizontal output gate section 5 of the horizontal transfer register 1, whereby the influence of the parasitic capacitance C 1 between the reset gate section 1 and the floating diffusion region 7 can be reduced and the coupling can be reduced. Consequently, the amount of charges processed by the floating diffusion region 7 can be avoided from being reduced by the coupling amount increased by the increase of sensitivity of the CCD imaging devices such as CCD area sensor, CCD linear sensor or the like. Also, the amount of charges transferred to the floating diffusion region 7 can be avoided from being reduced.
  • the influence of the parasitic capacitance between the floating diffusion region and the reset gate section can be suppressed and the coupling amount between the reference potential and the field-through potential in the output can be reduced, thereby keeping sufficient amount of charges processed by the floating diffusion region. Therefore, the sensitivity of the CCD imaging devices such as CCD area sensor, CCD linear sensor or the like can be improved.
  • a CCD imaging device according to a second embodiment of the present invention will be described below in detail with reference to FIG. 9 through FIGS. 10A to 10E. Also in the second embodiment, the CCD imaging device is applied to the CCD linear sensor.
  • the CCD imaging device is applied to the CCD linear sensor.
  • like parts corresponding to those of FIG. 4 are marked with the same references and therefore need not be described in detail.
  • FIG. 9 of the accompanying drawings shows a fragmentary plan view of a structure of the CCD imaging device according to the second embodiment of the present invention.
  • a photo sensing region 21 has an array of a plurality of photo sensing elements S (S 1 , S 2 , S 3 . . . ) arranged in one direction, and first and second horizontal transfer registers 24 and 25 of CCD structure are disposed on both sides of the photo sensing region 21 through read-out gate sections 22, 23 in parallel to the photo sensing region 21.
  • Each of the first and second horizontal transfer registers 24 and 25 has an array of a plurality of transfer sections HR (HR 1 , HR 2 ) each having a transfer electrode composed of a set of storage electrode and transfer electrode, though not shown.
  • One drive pulse ⁇ H 1 of the two-phase drive pulses is applied to the transfer electrode of every other one first transfer section HR 1 and the other drive pulse ⁇ H 2 is applied to the transfer electrode of remaining every other one second transfer section HR 2 .
  • the first transfer sections HR 1 of the first horizontal transfer register 24 are formed in association with the odd-numbered photo sensing elements S 1 , S 3 , S 5 , . . . , for example, and the first transfer sections HR 1 of the second horizontal transfer register 25 are formed in association with the even-numbered photo sensing elements S 2 , S 4 , S 6 , . . . , for example.
  • Final terminals of the first and second horizontal transfer registers 24 and 25 are connected to a common detecting section, i.e., floating diffusion region 27 through a common horizontal output gate section 26 to which the gate voltage V HOG is applied.
  • An output amplifier 28 is connected to the diffusion floating region 27.
  • a reset gate section 29 to which the reset pulse ⁇ RG is applied is formed between the floating diffusion region 27 and a reset drain region 30.
  • the final transfer section of the first and second horizontal transfer registers 24, 25, e.g., a transfer region 32 of final bit or a plurality of bits including the final bit is separated from the first and second horizontal transfer registers 24 and 25.
  • a drive pulse ⁇ H 1 ' (see FIG. 10B) is applied to the first transfer section HR 1 of the final transfer region 32 and a drive pulse ⁇ H 2 ' (see FIG. 10B) is applied to the second transfer section HR 2 , respectively.
  • a drive pules ⁇ H 1 see FIG.
  • a drive pulse ⁇ H 2 (see FIG. 10A) is applied to the second transfer sections HR 2 in the transfer region 33, respectively.
  • the reset pulse ⁇ RG (see FIG. 10) having frequency twice those of the drive pulses ⁇ H 1 , ⁇ H 1 ', ⁇ H 2 , ⁇ H 2 ' is supplied to the reset gate section 29 similarly as described before.
  • the phases of the drive pulses ⁇ H 1 , ⁇ H 2 applied to the preceding transfer region 33 are shifted by 't from those of the drive pulses ⁇ H 1 ', ⁇ H 2 ' such that negative-going edge t 1 or t 2 , . . . of the drive pulse ⁇ H1 or ⁇ H2 which transfers signal charges to the succeeding transfer section HR fall within the high level period of the reset pulse ⁇ RG (so-called ON period of the reset gate section 29).
  • the clock pulses ⁇ H1', ⁇ H2' for final stage and the reset pulse ⁇ RG generated from a timing generator 41 are supplied to a driver circuit 42 as is.
  • a delay circuit 43 is connected to external control terminals a 1 to a n and the delay circuit 43 delays the clock pulses ⁇ H 1 ', ⁇ H 2 ' from the timing generator 41 to provide clock pulses ⁇ H 1 , ⁇ H 2 which are phase-shifted by ⁇ t from the clock pulse ⁇ H 1 ', ⁇ H 2 '.
  • These clock pulses ⁇ H 1 , ⁇ H 2 are supplied to a driver circuit 44.
  • the delay amount ⁇ t of the delay circuit 43 can be changed by switching voltages applied to the external control terminals a 1 to a n in a digital fashion.
  • the phases between the drive pulses ⁇ H 1 ', ⁇ H 2 ' and drive pulses ⁇ H 1 , ⁇ H 2 are shifted as described above, whereby the influence of the transfer capacitance in the transfer region 33 in the CCD linear sensor can be reduced and the output waveform in the signal period can be made flat. Also, a difference of signal levels between the pixels can be improved.
  • the present invention is not limited thereto and the following variant is also possible. That is, a transfer section of several bits which are driven by two-phase drive pulses is disposed at the front stage of the floating diffusion region 27, whereby signal charges from the first and second horizontal transfer registers 24, 25 are alternately transferred to this transfer section of several bits and mixed together.
  • the final transfer region 32 of a plurality of bits in the first and second horizontal transfer registers 24, 25 is separated from the preceding transfer region 33 and supplied with the drive pulses ⁇ H 1 ', ⁇ H 2 ' and ⁇ H 1 , ⁇ H 2 in the above-mentioned phase-relation.
  • the present invention is applied to the CCD linear sensor having the first and second horizontal transfer registers 24, 25 as described above, the present invention is not limited thereto and the present invention can be applied to a CCD area image sensor in which signal charges of one line are read out by a plurality of horizontal transfer registers.
  • the output waveform in the signal period can be made flat and a difference between the pixels, i.e., the signal level corresponding to the odd-numbered pixel and the signal level corresponding to the even-numbered pixel can be improved.
  • the image quality of high resolution can be obtained without correcting the black signal.

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US07/911,936 1991-07-12 1992-07-10 Charge transfer device output Expired - Lifetime US5199053A (en)

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JP3-172633 1991-07-12
JP17263491A JP3208791B2 (ja) 1991-07-12 1991-07-12 Ｃｃｄ撮像素子及びその駆動方法
JP3172633A JPH0520892A (ja) 1991-07-12 1991-07-12 Ｃｃｄ素子
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US5615242A (en) * 1995-03-17 1997-03-25 Sony Corporation Charge transfer apparatus with output gate and driving method thereof
US6104072A (en) * 1994-07-15 2000-08-15 Sony Corporation Analogue MISFET with threshold voltage adjuster
US6326655B1 (en) * 1998-03-23 2001-12-04 Sony Corporation Solid state imaging device having a gate electrode formed over a potential dip
US20020118291A1 (en) * 1996-12-26 2002-08-29 Tomio Ishigami Charge transfer device and method of driving the same, and solid-state imaging device and method of driving the same
US20050069293A1 (en) * 2003-07-31 2005-03-31 Kabushiki Kaisha Toshiba Solid-state image pickup device and charge transfer device
US20050141061A1 (en) * 2003-12-12 2005-06-30 Kiyoshi Nagata Driving method for solid-state imaging device
US20050247857A1 (en) * 2004-04-26 2005-11-10 Toshimitsu Nagae Solid-state imaging device and CCD linear sensor
US20080106623A1 (en) * 2006-11-06 2008-05-08 Hiroyuki Oshima Solid-state imaging device and imaging apparatus
US20090195297A1 (en) * 2008-01-31 2009-08-06 Nec Electronics Corporation Ccd device and method of driving same
US20100039541A1 (en) * 2005-09-30 2010-02-18 Sony Corporation Method for driving semiconductor device having capacitive load, method and apparatus for driving load, and electronic apparatus

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JP3036250B2 (ja) * 1992-08-27 2000-04-24 ソニー株式会社 Ｃｃｄ素子
US6590238B1 (en) * 2002-02-12 2003-07-08 Eastman Kodak Company Image sensor having a capacitance control gate for improved gain control and eliminating undesired capacitance

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DE69228838D1 (de) 1999-05-06
EP0766455B1 (fr) 1999-03-31
EP0522552A3 (en) 1993-09-01
EP0766455A2 (fr) 1997-04-02
KR930003409A (ko) 1993-02-24
DE69223864D1 (de) 1998-02-12
EP0766455A3 (fr) 1997-07-23
DE69228838T2 (de) 1999-10-21
EP0522552B1 (fr) 1998-01-07
KR100247827B1 (ko) 2000-03-15
EP0522552A2 (fr) 1993-01-13
DE69223864T2 (de) 1998-08-06

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