US4953498A - Microwave plasma CVD apparatus having substrate shielding member - Google Patents

Microwave plasma CVD apparatus having substrate shielding member Download PDF

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Publication number
US4953498A
US4953498A US07/477,123 US47712390A US4953498A US 4953498 A US4953498 A US 4953498A US 47712390 A US47712390 A US 47712390A US 4953498 A US4953498 A US 4953498A
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cylindrical
substrate
shielding member
substrates
deposition chamber
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Expired - Fee Related
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US07/477,123
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English (en)
Inventor
Junichiro Hashizume
Tetsuya Takei
Shigehira Iida
Keishi Saitoh
Takayoshi Arai
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

Definitions

  • This invention relates to an improved microwave plasma CVD apparatus for the formation of a deposited film on a substrate, particularly a functional film, or more particularly, an amorphous semiconductor film usable as an constituent element member in semiconductor devices, electrophotographic sensitive devices, image input line sensors, image pickup devices and photoelectromotive force devices.
  • amorphous semiconductor films for instance, an amorphous silicon compensated with hydrogen or/and halogen (e.g., F, Cl)(hereinafter referred to as "A--Si(H,X)").
  • halogen e.g., F, Cl
  • deposited films have been known to be formed by plasma CVD method wherein a raw material gas is decomposed by subjecting it to the action of an energy of direct current, high frequency or microwave to thereby form a deposited film on a substrate of glass, quartz, heat-resistant synthetic resin, stainless steel or aluminum.
  • MW-PCVD method microwave plasma CVD method
  • One representative known apparatus for the formation of a deposited film by way of MW-PCVD method is such that has a structure as shown by a schematic perspective view of FIG. 10 and a schematic cross-section view of the apparatus of FIG. 10 as shown in FIG. 11.
  • 1001 is a reaction chamber having a vacuum enclosed structure.
  • 1002 is a dielectric window made of such material as quartz glass, alumina ceramics, that can transmit efficiently the microwave power into the reaction chamber and can retain the vacuum.
  • 1003 is a microwave guide, and comprises mainly a metallic square waveguide. The waveguide is connected through a matching box and an isolator to a microwave power source (not shown).
  • 1004 is an exhaust pipe that one end is open into the reaction chamber 1001 and the other end is connected to an exhaust apparatus (not shown).
  • 1005 is a substrate on which a deposited film is to be formed.
  • 1006 is a discharge space surrounded by substrates.
  • the formation of a deposited film using this conventional MW-PCVD apparatus is carried out in the following way. That is, the reaction chamber 1004 is evacuated by operating a vacuum pump (not shown) through the exhaust pipe 1004 to adjust the inside of the reaction chamber to a vacuum of 1 ⁇ 10 -7 Torr or less. Then, a heater 1007 is actuated to heat the substrate 1005 with a desired temperature suitable for the formation of a deposited film, and the substrate is kept at this temperature. Thereafter, for example, in the case of forming an amorphous silicon deposited film, silane gas, hydrogen gas and like raw material gas are introduced through a gas introducing means (not shown) into the reaction chamber.
  • a gas introducing means not shown
  • a microwave with frequency of 500 MHz, preferably 2.45 GHz is generated by the microwave power source (not shown), and is introduced through the waveguide 1003 and the dielectric window 1002 into the reaction chamber 1001.
  • the gas in the reaction chamber 1001 is activated and dissociated to form a deposited film on the surface of the substrate.
  • the substrate 1005 is rotated in the direction of generatrix around the central axis to form a deposited film on the substrate.
  • part of the surface of the substrate 1005 to become situated in the front region of the discharge space 1006 will be exposed to an atmosphere containing uniformly distributed plasmas and because of this, a film will be uniformly deposited thereon (this film will be hereinafter called “front film”).
  • other parts of the surface of the substrate 1005 to become situated in the side regions of the discharging space 1006 will be exposed to an atmospheres containing unevenly distributed plasmas, so that films to be deposited on such other parts of the surface of the substrate will become uneven accordingly (these films will be hereinafter called “side part films”).
  • the remaining part of the surface of the substrate 1005 to become situated in the non-discharging back region will not be exposed to plasma, so that said part will be maintained without being deposited with any film in said region.
  • the resulting films will often become such that have defects in uniformity and also in homogeneity and that are not satisfactory in characteristics required for the light receiving layer of a photosensitive device, for example.
  • the present inventors have conducted extensive studies in order to solve the problems in the aforementioned known MW-PCVD apparatus and in order to make appropriate improvements therefor so as to make it possible to effectively form a widely usable functional deposited film having a wealth of many practically applicable characteristics without such problems as found on the known MW-PCVD apparatus.
  • Another object of this invention is to provide an improved MW-PCVD apparatus which enables to effectively and stably mass-produce a functional deposited amorphous film such as an amorphous semiconductor material film which excels in optical and electric characteristics and which is widely usable as a semiconductor element in the foregoing various devices at high deposition rate without generation of polysilane powder caused by polymerization of a raw material gas.
  • a further object of this invention is to provide an improved MW-PCVD apparatus which makes essentially or substantially hundred percent of the raw material gas to be utilized in the formation of the aforesaid functional deposited amorphous film at high deposition rate and which makes it possible to mass-produce said film on an industrial scale thereby enabling low cost production.
  • FIG. 1 is a schematic explanatory plan view, partly broken away, of a first representative MW-PCVD apparatus according to the present invention.
  • FIG. 2 is a schematic explanatory exploded view of a shielding member to be installed in the MW-PCVD apparatus shown in FIG. 1.
  • FIG. 3 is a schematic explanatory plan view, partly broken away, of a second representative MW-PCVD apparatus according to the present invention.
  • FIG. 4 is a schematic explanatory exploded view of a shielding member to be installed in the MW-PCVD apparatus shown in FIG. 3.
  • FIG. 5 is a schematic explanatory cross-sectional view, partly broken away, of a third representative MW-PCVD apparatus according to the present invention.
  • FIG. 6 is a graph illustrating the interrelations between opening degrees of the shielding member and charge retentivities of the resultant electrophotographic photosensitive members.
  • FIG. 7 is a graph illustrating the interrelations between opening degrees of the shielding member and deposition rates of the resultant deposited films.
  • FIG. 8 is a graph illustrating the interrelations of distances between substrate surface and the shielding member to charge retentivities of the resultant electrophotographic photosensitive members.
  • FIG. 9 is a graph illustrating the interrelations between inner pressures of the plasma discharge space and charge retentivities of the resultant electrophotographic photosensitive members.
  • FIG. 10 is a schematic explanatory perspective view, partly broken away, of the known MW-PCVD apparatus.
  • FIG. 11 is a schematic cross-sectional view, partly broken away, of the MW-PCVD apparatus of FIG. 10.
  • the present invention is to accomplish said objects, and it provides an improved MW-PCVD apparatus, characterized in that in the MW-CVD apparatus having a substrate onto which a deposited film to be formed and a space near the substrate for the decomposition of a raw material gas with the action of microwave energy, a shielding member is provided between said substrate and said space, which has an opening to allow part of the decomposed raw material gas species to be passed toward the substrate.
  • FIGS. 1 and 2 there is shown a representative embodiment (1) of the MW-CVD apparatus which attains the objects of the present invention.
  • a reaction chamber 101 which is provided with a microwave transmissive window 102.
  • a plurality of cylindrical substrates 105 In the reaction space of the reaction chamber, there are arranged a plurality of cylindrical substrates 105 so that they surround the plasma space to receive the plasma substantially from one direction at their side surfaces.
  • the structure of the MW-PCVD apparatus is the same with the conventional MW-PCVD apparatus shown in FIG. 10.
  • the point to distinguish the MW-PCVD apparatus of the present invention from the conventional one resides in that shielding members 109 shown in FIG. 1 are provided.
  • the shielding member according to the present invention has such shape as shown by the numeral 209 in FIG. 2.
  • FIGS. 3 and 4 there is shown a second embodiment (2) exerting similar effect.
  • the more the angle ⁇ obtained when the opening is observed from the cylindrical substrate central axis (hereinafter referred to "open angle ⁇ ") is increased, the more the area to be deposited with a film on the substrate is increased. And, the utilization efficiency of the raw material gas is increased.
  • the cases when the film deposition occurs on the side surfaces of the substrate will be increased, and this results in reduction of the film quality.
  • the open angle is reduced, the film quality is increased, but the utilization efficiency of the raw material gas is decreased.
  • the present inventors have experimentally found the fact that the open angle ⁇ is desired to be adjusted to preferably from 20° to 90°, and more preferably, from 40° to 90°.
  • metallic materials such as Al, Ni and stainless steel.
  • Al is most desired, since Al hardly becomes to cause contamination for a deposited film such as A--Si:H:X film and its thermal expansion coefficient is equal each other when Al is also used as the substrate.
  • Ni and stainless-steel which are of a high mechanical strength, the thickness of the shielding member can be reduced.
  • ceramics material and heat-resistant polymer such as polyimide are also suitable as well as the metallic material. The ceramics material is excellent in strength and heat-resistance, and polymer is excellent in workability.
  • the shielding member according to the present invention exerts particularly excellent effects when the inner pressure in the plasma space is a vacuum of 10 mTorr or less.
  • the mean free path of the gas molecule ranges from several cm to several tens cm, and their collisions with the wall face of the shielding member occurs at higher rate than the collisions among the molecules.
  • Similar thinking can also be given as for the active species contributing to the deposition of a film, and atoms move straightly not by diffusion. Accordingly, even if a certain space is present between the shielding member and the substrate, the atoms do not spread out through such space by diffusion, and they may be effective shielded.
  • the space between the shielding member and the substrate is the better the narrower. However, if it is too narrow, the evacuation of the air in the space between the shielding member and the substrate cannot be sufficiently carried out, and accordingly, a standing gas is liable to be generated. If such standing gas is present, the inner pressure of said space becomes higher than that as desired, and because of this, the effect to provide the shielding member will be diminished. In addition, if the distance between the shielding member and the substrate is a value of 1 mm or less, there occurs a difficulty in handling in case of putting the substrate or taking out the deposited film product.
  • the film deposited on the edge of the shielding member is sometimes stripped off during the film forming process for a long period of time.
  • said distance is 1 mm or more, the stripped film falls naturally without affecting adversely onto the film being deposited the substrate.
  • said distance is too broad as much as more than 50 mm, said distance becomes near the mean free path of the gas molecule, and as a result, the substrate will be influenced by their diffusions and satisfactory effect is not obtained.
  • the distance between the shielding member and the substrate is preferably between 1 mm and 50 mm, more preferably between 1 mm and 40 mm, and most preferably, between 1 mm and 30 mm.
  • the other point of the MW-PCVD apparatus according to the present invention to be distinguished from the conventional MW-PCVD apparatus is that there are arranged gas feed pipes 108 or 308 having a plurality of gas liberation holes to allow a raw material gas to be fed into the plasma discharge space 106 or 306 between every space between every two the cylindrical substrates 105 or 305 so as to surround the plasma discharge space 106 or 306 in the ways as shown in FIG. 1 or FIG. 3.
  • the raw material gas to be fed will be uniformly dispersed in the plasma discharge space and as a result, plasmas will be uniformly generated therein.
  • a desirable deposited film excelling in the film homogeneity and the characteristics may be effectively formed at a high deposition rate and a high raw material gas utilization efficiency.
  • the substrate is cylindrical, but the shape of the substrate is not restricted to this type, and any shaped of substrate can be used that is expected to exert the effects given above.
  • the foregoing shielding member can be used suitably other kind of MW-PCVD apparatus such as shown in FIG. 5.
  • reaction chamber 501 microwave transmissive window 502, waveguide, 503, exhaust pipe 504, plate-like substrate 505, glow discharge plasma space 506, electric heater 507 for the substrate, gas feed pipe 508, and shielding member 509.
  • the heater 507 for the substrate installed with a plurality of plate-like substrates 505 moves reciprocally in the longitudinal direction.
  • FIG. 6 there are shown changes in the charge retentivity when the open angle of the shielding member was changed.
  • the charge retentivity decreased slowly at 45° or more, however, the increase of more than 10% could be attained even at 90°. On the other hand, the charge retentivity decreased rapidly when the open angle was made 90° or more, and the effect due to the shielding member was not observed.
  • FIG. 7 relates to the interrelation between the open angle and the deposition rate.
  • the vertical axis shows the deposition rate, and the deposition rate in the case when the shielding member was not used, was made as 100%.
  • the deposition rate became 70% or more at the open angle of 20° or more, and became 90% or more at 40° or more.
  • the deposition rate decreased remarkably at 20° or less. So, the practical open angle is desired to be 20° or more, preferably 40° or more. From the above results, it is understood that the suitable open angle is 20° to 90°.
  • Test 1 The procedures of Test 1 were repeated, except that the distance between the shielding member and the substrate was changed, to thereby prepare a plurality photosensitive drum samples.
  • the resultant drum samples were evaluated by repeating the evaluation procedures of Test 1.
  • FIG. 8 there were shown changes in the charge retentivity in the case when said distance was changed. There was not observed any distinguishable difference in the effects between the embodiments 1 and 2. And the charge retentivity changed scarcely in both cases when the open angle was made 20° and 90°, as long as the distance between the substrate and the shielding member was kept 30 mm or less. And, it decreased slowly at the distance of 30 to 50 mm. Then, it decreased remarkably when the distance exceeded 50 mm, and the effect due to the shielding member was not deserved.
  • the suitable distance between the substrate and the shielding member is preferably from 1 mm to 50 mm, more preferably from 1 mm to 40 mm, and most preferably, from 1 mm to 30 mm.
  • Test 1 The procedures of Test 1 were repeated, except that the inner pressure was changed, to thereby prepare a plurality of photosensitive drum samples.
  • the resultant photosensitive drum samples were evaluated by repeating the evaluation procedures of Test 1. The results obtained were as shown in FIG. 9. There was not observed any distinguishable difference in the effects between the embodiments 1 and 2 was not observed. The effect due to the shielding member was observed particularly at an inner pressure of 10 m Torr or less, and the charge retentivity increased.
  • Examples 1 to 7 there was used the MW-PCVD apparatus of the embodiment (1) shown in FIGS. 1 and 2, and in Example 8, there was used the MW-PCVD apparatus shown in FIG. 5.
  • the inside of the reaction chamber 101 was evacuated through the exhaust pipe 104, and the heaters installed in the substrates 105 were actuated to heat the substrates to a desired temperature, and it was kept at this temperature. Then, silane gas (SiH 4 ). hydrogen gas (H 2 ) and diborane gas (B 2 H 6 ) were supplied into the reaction chamber 101 through the gas feed pipes under the conditions shown in Table 2 while keeping the vacuum of the reaction chamber at 1 ⁇ 10 -2 Torr or less. The substrates 105 were rotated at a constant speed with a driving motor (not shown). Then, microwave of 2.45 GHz was applied from a microwave power source (not shown) into the discharge space 106 through the wave guides 103 and the microwave transmissive windows 102.
  • the raw material gases as introduced into the discharge space 106 were activated and dissociated to generate neutral radical particles, ion particles and electrons, and these were reacted each other to form a deposited film on the substrates 105 facing to the discharge space.
  • the kind of the raw material gas, its flow rate, the inner pressure in the reaction chamber 101, the microwave energy to be introduced, etc. may be varied sensitive member to be prepared.
  • the resultant photosensitive members were evaluated on their characteristics (charge retentivity, sensitivity, residual potential), image characteristics (smeared image, ghost, defective image) using a Canon's experimental copier of NP-7550, (product of CANON KABUSHIKI KAISHA). The results obtained were as shown in Table 3.
  • Example 1 For comparison, the procedures of Example 1 were repeated except that the shielding members were removed from the apparatus, to thereby prepare a plurality photosensitive member samples. The resultant samples were evaluated by repeating the evaluation procedures of Example 1. The results obtained were as shown in Table 3.
  • Example 1 The procedures of Example 1 were repeated, except that the distance between the shielding member and the substrate, and the open angle ( ⁇ ) were changed, to thereby prepare a plurality of photosensitive members. In each case, the film forming period was adjusted in such a manner that the thickness of each layer was equal to that in Example 1.
  • the resultant samples were evaluated by repeating the evaluation procedures of Example 1. The sample numbers and the film formation conditions are shown in Table 4. The evaluated results were as shown in Table 5.
  • Example 1 The procedures of Example 1 were repeated, except that the inner pressure was changed, to thereby prepare a plurality of photosensitive member samples.
  • the sample Nos. and the film forming conditions are shown in Table 6.
  • the resultant samples were evaluated by repeating the evaluation procedures of Example 1. The evaluation results were as shown in Table 7.
  • Example 1 The procedures of Example 1 were repeated except that the H 2 gas was replaced for Ar gas, to thereby prepare a photosensitive member. As a result of evaluating the resultant sample, there were obtained the results as shown in Table 8.
  • Example 5 The procedures of Example 5 were repeated, except that the SiF 4 gas was replaced for Si 2 F 6 gas, to thereby prepare a photosensitive member. Its evaluation results were as shown in Table 8.
  • Example 1 The procedures of Example 1 were repeated, except that the flow rate of the SiH 4 gas was decreased to 450 SCCM, and GeH 4 gas was fed at a flow rate of 50 SCCM at the time of forming the charge injection inhibiting layer, to thereby prepare a photosensitive member. Its evaluation results were as shown in Table 8.
  • Example 9 using the MW-CVD apparatus shown in FIG. 5, and in a similar manner as that in Example 1, there was prepared a A--Si(H,X) film under the conditions shown in Table 9. As a result of evaluating the resultant film, it was found that the dark resistance increases, and the ratio of the conductivity to the dark conductivity ( ⁇ p/ ⁇ d) increases by one figure.
  • the shutter when a shutter capable of being freely opened and shut is installed at the opening of the shielding member, the shutter can be closed when the glow discharge is unstable due to matching adjustment, and as a result, the film formation becomes possible to effectively carry out under stable discharge conditions, and further improvements in the characteristics become possible.
  • the shielding member having such shutter can be designed to be freely removal together with the substrate to thereby protect the substrate from suffering physical impacts and to make easy the transport of the substrate.

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US07/477,123 1987-03-27 1990-02-07 Microwave plasma CVD apparatus having substrate shielding member Expired - Fee Related US4953498A (en)

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JP7356287 1987-03-27
JP62-73562 1987-03-27
JP63057297A JPS6456874A (en) 1987-03-27 1988-03-10 Microwave plasma cvd device
JP62-57297 1988-03-10

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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
GB2260339A (en) * 1991-09-02 1993-04-14 Fuji Electric Co Ltd Ecr plasma cvd method and apparatus for preparing a silicon oxide film
US5338580A (en) * 1988-11-15 1994-08-16 Canon Kabushiki Kaisha Method of preparation of functional deposited film by microwave plasma chemical vapor deposition
US5753045A (en) * 1995-01-25 1998-05-19 Balzers Aktiengesellschaft Vacuum treatment system for homogeneous workpiece processing
US5902649A (en) * 1995-01-25 1999-05-11 Balzers Aktiengesellschaft Vacuum treatment system for homogeneous workpiece processing
EP1256978A3 (en) * 2001-05-09 2005-02-02 Asm Japan K.K. Method of forming low dielectric constant insulation film for semiconductor device
US20080050650A1 (en) * 2006-08-28 2008-02-28 Sony Corporation Battery device, electronic apparatus, and battery system
US20090238993A1 (en) * 2008-03-19 2009-09-24 Applied Materials, Inc. Surface preheating treatment of plastics substrate
US20090238998A1 (en) * 2008-03-18 2009-09-24 Applied Materials, Inc. Coaxial microwave assisted deposition and etch systems
US20090277778A1 (en) * 2008-05-06 2009-11-12 Applied Materials, Inc. Microwave rotatable sputtering deposition
US20090283400A1 (en) * 2008-05-14 2009-11-19 Applied Materials, Inc. Microwave-assisted rotatable pvd
US20100078320A1 (en) * 2008-09-26 2010-04-01 Applied Materials, Inc. Microwave plasma containment shield shaping
US20100078315A1 (en) * 2008-09-26 2010-04-01 Applied Materials, Inc. Microstrip antenna assisted ipvd
US20110076420A1 (en) * 2008-01-30 2011-03-31 Applied Materials, Inc. High efficiency low energy microwave ion/electron source
US20110076422A1 (en) * 2008-01-30 2011-03-31 Applied Materials, Inc. Curved microwave plasma line source for coating of three-dimensional substrates
US8679594B2 (en) 2008-02-20 2014-03-25 Applied Materials, Inc. Index modified coating on polymer substrate
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
CN110284123A (zh) * 2019-06-28 2019-09-27 江苏永鼎光纤科技有限公司 一种微波等离子体化学气相沉积设备的微波屏蔽装置
US20200283905A1 (en) * 2019-03-08 2020-09-10 Dsgi Technologies, Inc. System and method of low temperature thin film deposition and in-situ annealing
EP2868768B1 (en) * 2013-10-29 2021-06-16 Oerlikon Surface Solutions AG, Pfäffikon Shutter system

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US4785763A (en) * 1986-12-09 1988-11-22 Canon Kabushiki Kaisha Apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process

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US4729341A (en) * 1985-09-18 1988-03-08 Energy Conversion Devices, Inc. Method and apparatus for making electrophotographic devices
US4785763A (en) * 1986-12-09 1988-11-22 Canon Kabushiki Kaisha Apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
US5338580A (en) * 1988-11-15 1994-08-16 Canon Kabushiki Kaisha Method of preparation of functional deposited film by microwave plasma chemical vapor deposition
GB2260339A (en) * 1991-09-02 1993-04-14 Fuji Electric Co Ltd Ecr plasma cvd method and apparatus for preparing a silicon oxide film
GB2260339B (en) * 1991-09-02 1995-04-26 Fuji Electric Co Ltd Method and apparatus for preparing a silicon oxide film
US5626679A (en) * 1991-09-02 1997-05-06 Fuji Electric Co., Ltd. Method and apparatus for preparing a silicon oxide film
US5753045A (en) * 1995-01-25 1998-05-19 Balzers Aktiengesellschaft Vacuum treatment system for homogeneous workpiece processing
US5902649A (en) * 1995-01-25 1999-05-11 Balzers Aktiengesellschaft Vacuum treatment system for homogeneous workpiece processing
EP1256978A3 (en) * 2001-05-09 2005-02-02 Asm Japan K.K. Method of forming low dielectric constant insulation film for semiconductor device
US20080050650A1 (en) * 2006-08-28 2008-02-28 Sony Corporation Battery device, electronic apparatus, and battery system
US20110097517A1 (en) * 2008-01-30 2011-04-28 Applied Materials, Inc. Dynamic vertical microwave deposition of dielectric layers
US20110076420A1 (en) * 2008-01-30 2011-03-31 Applied Materials, Inc. High efficiency low energy microwave ion/electron source
US20110076422A1 (en) * 2008-01-30 2011-03-31 Applied Materials, Inc. Curved microwave plasma line source for coating of three-dimensional substrates
US8679594B2 (en) 2008-02-20 2014-03-25 Applied Materials, Inc. Index modified coating on polymer substrate
US20090238998A1 (en) * 2008-03-18 2009-09-24 Applied Materials, Inc. Coaxial microwave assisted deposition and etch systems
US20090238993A1 (en) * 2008-03-19 2009-09-24 Applied Materials, Inc. Surface preheating treatment of plastics substrate
US8057649B2 (en) 2008-05-06 2011-11-15 Applied Materials, Inc. Microwave rotatable sputtering deposition
US20090277778A1 (en) * 2008-05-06 2009-11-12 Applied Materials, Inc. Microwave rotatable sputtering deposition
US20090283400A1 (en) * 2008-05-14 2009-11-19 Applied Materials, Inc. Microwave-assisted rotatable pvd
US8349156B2 (en) 2008-05-14 2013-01-08 Applied Materials, Inc. Microwave-assisted rotatable PVD
US20100078315A1 (en) * 2008-09-26 2010-04-01 Applied Materials, Inc. Microstrip antenna assisted ipvd
WO2010036489A3 (en) * 2008-09-26 2010-05-27 Applied Materials, Inc. Microwave plasma containment shield shaping
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