US4557914A - Process for producing substances optically transparent to infrared rays - Google Patents
Process for producing substances optically transparent to infrared rays Download PDFInfo
- Publication number
- US4557914A US4557914A US06/626,053 US62605384A US4557914A US 4557914 A US4557914 A US 4557914A US 62605384 A US62605384 A US 62605384A US 4557914 A US4557914 A US 4557914A
- Authority
- US
- United States
- Prior art keywords
- chalcogenides
- chloride
- reaction
- chamber
- dihydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 15
- 239000000126 substance Substances 0.000 title abstract description 3
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052752 metalloid Inorganic materials 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 150000002738 metalloids Chemical class 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 5
- 238000002844 melting Methods 0.000 claims abstract description 5
- 230000005855 radiation Effects 0.000 claims abstract description 5
- 238000006467 substitution reaction Methods 0.000 claims abstract description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract 5
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 5
- 229910052985 chalcogen hydride Inorganic materials 0.000 claims description 5
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910006113 GeCl4 Inorganic materials 0.000 claims description 2
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 2
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims description 2
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 claims description 2
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical group Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 claims description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 2
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 claims description 2
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 claims description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims description 2
- 239000011592 zinc chloride Substances 0.000 claims description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 229910017009 AsCl3 Inorganic materials 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 150000003841 chloride salts Chemical class 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 230000001376 precipitating effect Effects 0.000 claims 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims 1
- 239000000376 reactant Substances 0.000 abstract description 5
- 150000003839 salts Chemical class 0.000 abstract description 4
- -1 metalloid chalcogenide Chemical class 0.000 abstract description 3
- 239000013307 optical fiber Substances 0.000 abstract description 3
- 239000002244 precipitate Substances 0.000 abstract description 3
- 239000007858 starting material Substances 0.000 abstract description 3
- 229910052798 chalcogen Inorganic materials 0.000 abstract description 2
- 150000001787 chalcogens Chemical class 0.000 abstract description 2
- 150000004678 hydrides Chemical class 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000009835 boiling Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- UKUVVAMSXXBMRX-UHFFFAOYSA-N 2,4,5-trithia-1,3-diarsabicyclo[1.1.1]pentane Chemical compound S1[As]2S[As]1S2 UKUVVAMSXXBMRX-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229940052288 arsenic trisulfide Drugs 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 150000004771 selenides Chemical class 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910005842 GeS2 Inorganic materials 0.000 description 1
- 229910017963 Sb2 S3 Inorganic materials 0.000 description 1
- 229910020343 SiS2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- XOCUXOWLYLLJLV-UHFFFAOYSA-N [O].[S] Chemical compound [O].[S] XOCUXOWLYLLJLV-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001786 chalcogen compounds Chemical class 0.000 description 1
- 150000001805 chlorine compounds Chemical group 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
- C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C13/00—Fibre or filament compositions
- C03C13/04—Fibre optics, e.g. core and clad fibre compositions
- C03C13/041—Non-oxide glass compositions
- C03C13/043—Chalcogenide glass compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/80—Non-oxide glasses or glass-type compositions
- C03B2201/86—Chalcogenide glasses, i.e. S, Se or Te glasses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S501/00—Compositions: ceramic
- Y10S501/90—Optical glass, e.g. silent on refractive index and/or ABBE number
- Y10S501/904—Infrared transmitting or absorbing
Definitions
- My present invention relates to the production of substances that are optically transparent to infrared radiation and are usable in the manufacture of optical fibers or lasers and other radiation emitters.
- silicon-based fibers and other electronic components it is convenient to use the well-known chemical-vapor-deposition (CVD) process; see, for example, commonly owned U.S. Pat. Nos. 4,389,230 and 4,414,164.
- CVD chemical-vapor-deposition
- silicon can be obtained from one of the following reactions performed in a high-temperature furnace:
- Zinc sulfide and zinc selenide usable in fiber-optical technology for infrared transmissivity, are available in accordance with reactions
- the CVD process is designed to minimize the problems of radiation absorption, e.g. intrinsically by substrate/impurity bonds and extrinsically through scattering by the presence of anomalous domains. These latter may result from grain dislocations in a crystalline substrate or, with a vitreous substrate, from crystalline zones or from separation of phases of different densities.
- Redox reactions used in conventional CVD processes are sometimes accompanied by side reactions, involving different valence states, that give rise to undesired and often detrimental products.
- Reaction (4) may result in the formation of ZnH groups in the ZnS matrix, with the zinc in its monovalent form. These groups present absorption bands within the infrared range of interest lying between 2 and 12 ⁇ .
- the object of my present invention is to provide a modified CVD process which obviates the redox reactions yielding undesired compounds.
- the modified CVD process comprises vaporizing one or more chalcogen compounds and of one or more salts of a metal or metalloid, preferably a halide, and subjecting the resulting vapors under nonreducing and nonoxidizing conditions to a double-substitution reaction producing a chalcogenide (other than an oxide) of the metal or metalloid referred to.
- Chalcogens are members of the oxygen family in Group VIA of the Periodic Table, namely--besides oxygen--sulfur, selenium tellurium and polonium. I particularly contemplate the use of sulfur, selenium and tellurium for the practice of my present process in which I prefer their hydrides as a starting compound, i.e. H 2 S, H 2 Se or H 2 Te.
- the salt serving as a reactant is preferably a chloride of the metal or metalloid whose sulfide, selenide or telluride is to be produced.
- the double-substitution reaction eliminates the aforedescribed side reactions based on different valence states. It is particularly advantageous when the resulting chalcogenide is a high-boiling compound which during processing assumes a state of aggregation different from that of both the initial and residual reactants and byproducts, thereby facilitating the separation of the desired product.
- the desired product is solid at the processing temperature, which ought to be much higher than the boiling point of the reactants, the process requires low energy and, with equilibrium shifting entirely toward the right-hand side of the reaction, operates with an efficiency close to 100%.
- the metals and metalloids primarily usable in my process are arsenic, antimony, zinc, germanium, tin, lead, silicon and cadmium.
- the resulting chalcogenides, especially sulfides have a wide transmission window in the infrared range, with low absorption coefficients and a theoretical attenuation of about 10 -2 dB/Km at 5-6 ⁇ .
- Their thermal-expansion coefficient is 10 -6 /K which facilitates the drawing of optical fibers from glasses containing same.
- Their refractive indices of about 2 makes them suitable for the manufacture of glass/plastic fibers with a stepped index of refraction.
- FIGURE diagrammatically shows an installation for performing a modified CVD process as described above.
- two boiling vessels 1 and 2 respectively generate vapors of a chalcogen hydride and a metal halide. These vapors are concurrently led to a reaction chamber 3 heated to a start-up temperature which causes them to interact, in a nonoxidizing and nonreducing atmosphere, to produce a desired metal chalcogenide whose melting point lies well above the chamber temperature and which therefore precipitates as a solid at an outlet 4.
- the metal of course, could be replaced by a metalloid such as arsenic or silicon.
- Arsenic trisulfide is produced by a double-substitution reaction given by
- the hydrogen sulfide (or sulfur hydride) and the arsenic trichloride, respectively vaporized in vessels 1 and 2, have boiling points of about -60° C. and +63° C., respectively; chamber 3, to which their vapors are separately fed, is initially heated to about 200° C. to start up the reaction which is exothermic, generating a fusion temperature of around 300° C. This is still below the melting point of the arsenic trisulfide recovered as a precipitate at outlet 4. Reaction can be performed under atmospheric pressure.
- Mixtures of different solid chalcogenides can be obtained, as starting materials for glasses of predetermined composition, from combinations of metal or metalloid sulfides, selenides and tellurides treated in the manner described.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Glass Compositions (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Glass Melting And Manufacturing (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Cosmetics (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT67715A/83 | 1983-06-30 | ||
| IT67715/83A IT1161486B (it) | 1983-06-30 | 1983-06-30 | Metodo per la produzione di materiali con trasparenza ottica nell'infrarosso |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US4557914A true US4557914A (en) | 1985-12-10 |
Family
ID=11304729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US06/626,053 Expired - Lifetime US4557914A (en) | 1983-06-30 | 1984-06-29 | Process for producing substances optically transparent to infrared rays |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4557914A (da) |
| EP (1) | EP0130594B1 (da) |
| JP (1) | JPS6021822A (da) |
| AT (1) | ATE29706T1 (da) |
| AU (1) | AU553297B2 (da) |
| BR (1) | BR8402970A (da) |
| CA (1) | CA1227320A (da) |
| DE (2) | DE130594T1 (da) |
| DK (1) | DK163295C (da) |
| ES (1) | ES8606214A1 (da) |
| IT (1) | IT1161486B (da) |
| NO (1) | NO158297C (da) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4869893A (en) * | 1987-08-10 | 1989-09-26 | Hughes Aircraft Company | Preparation of high purity compounds of sulfur, selenium, and tellurium |
| US4942144A (en) * | 1989-01-23 | 1990-07-17 | Iowa State University Research Foundation, Inc. | Infrared transmitting glasses with high glass transition temperatures |
| US5077239A (en) * | 1990-01-16 | 1991-12-31 | Westinghouse Electric Corp. | Chalcogenide glass, associated method and apparatus |
| US5227149A (en) * | 1991-10-08 | 1993-07-13 | Sullivan Thomas M | Process for making silicon monosulfide and aluminum sulfide |
| US5549971A (en) * | 1986-08-18 | 1996-08-27 | Clemson University | Laser assisted fiber growth |
| US5779757A (en) * | 1996-06-26 | 1998-07-14 | The United States Of America As Represented By The Secretary Of The Navy | Process for removing hydrogen and carbon impurities from glasses by adding a tellurium halide |
| US20060239882A1 (en) * | 2003-01-31 | 2006-10-26 | Seo Dong-Kyun | Preparation of metal chalcogenides from reactions of metal compounds and chalcogen |
| US20070074541A1 (en) * | 2003-10-10 | 2007-04-05 | University Of Southampton | Synthesis of germanium sulphide and related compounds |
| US10191186B2 (en) | 2013-03-15 | 2019-01-29 | Schott Corporation | Optical bonding through the use of low-softening point optical glass for IR optical applications and products formed |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105940265A (zh) | 2013-12-04 | 2016-09-14 | 阿卜杜拉国王科技大学 | 用于燃烧和材料合成的设备和方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2671739A (en) * | 1949-06-22 | 1954-03-09 | Bell Telephone Labor Inc | Plating with sulfides, selenides, and tellurides of chromium, molybdenum, and tungsten |
| US3218204A (en) * | 1962-07-13 | 1965-11-16 | Monsanto Co | Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound |
| US3224912A (en) * | 1962-07-13 | 1965-12-21 | Monsanto Co | Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of ii-vi compounds |
| US3224913A (en) * | 1959-06-18 | 1965-12-21 | Monsanto Co | Altering proportions in vapor deposition process to form a mixed crystal graded energy gap |
| US3664866A (en) * | 1970-04-08 | 1972-05-23 | North American Rockwell | Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds |
| US4066481A (en) * | 1974-11-11 | 1978-01-03 | Rockwell International Corporation | Metalorganic chemical vapor deposition of IVA-IVA compounds and composite |
| US4447469A (en) * | 1982-06-10 | 1984-05-08 | Hughes Aircraft Company | Process for forming sulfide layers by photochemical vapor deposition |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3657006A (en) * | 1969-11-06 | 1972-04-18 | Peter D Fisher | Method and apparatus for depositing doped and undoped glassy chalcogenide films at substantially atmospheric pressure |
| DE2648702C3 (de) * | 1976-10-27 | 1980-08-21 | Jenaer Glaswerk Schott & Gen., 6500 Mainz | Infrarotdurchlässige Lichtleitfaser aus sauerstoffarmem bzw. sauerstofffreiem GUs und Verfahren zu ihrer Herstellung |
| JPS589844A (ja) * | 1981-07-08 | 1983-01-20 | Hitachi Ltd | 赤外光フアイバ |
| JPS57149835A (en) * | 1981-03-06 | 1982-09-16 | Hitachi Ltd | Manufacture of infrared fiber |
-
1983
- 1983-06-30 IT IT67715/83A patent/IT1161486B/it active
-
1984
- 1984-04-24 AU AU27234/84A patent/AU553297B2/en not_active Ceased
- 1984-06-18 BR BR8402970A patent/BR8402970A/pt unknown
- 1984-06-18 NO NO842438A patent/NO158297C/no unknown
- 1984-06-19 DK DK299684A patent/DK163295C/da not_active IP Right Cessation
- 1984-06-19 JP JP59124618A patent/JPS6021822A/ja active Pending
- 1984-06-19 ES ES533541A patent/ES8606214A1/es not_active Expired
- 1984-06-27 CA CA000457563A patent/CA1227320A/en not_active Expired
- 1984-06-29 DE DE198484107565T patent/DE130594T1/de active Pending
- 1984-06-29 AT AT84107565T patent/ATE29706T1/de not_active IP Right Cessation
- 1984-06-29 EP EP84107565A patent/EP0130594B1/en not_active Expired
- 1984-06-29 US US06/626,053 patent/US4557914A/en not_active Expired - Lifetime
- 1984-06-29 DE DE8484107565T patent/DE3466207D1/de not_active Expired
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2671739A (en) * | 1949-06-22 | 1954-03-09 | Bell Telephone Labor Inc | Plating with sulfides, selenides, and tellurides of chromium, molybdenum, and tungsten |
| US3224913A (en) * | 1959-06-18 | 1965-12-21 | Monsanto Co | Altering proportions in vapor deposition process to form a mixed crystal graded energy gap |
| US3218204A (en) * | 1962-07-13 | 1965-11-16 | Monsanto Co | Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound |
| US3224912A (en) * | 1962-07-13 | 1965-12-21 | Monsanto Co | Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of ii-vi compounds |
| US3664866A (en) * | 1970-04-08 | 1972-05-23 | North American Rockwell | Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds |
| US4066481A (en) * | 1974-11-11 | 1978-01-03 | Rockwell International Corporation | Metalorganic chemical vapor deposition of IVA-IVA compounds and composite |
| US4447469A (en) * | 1982-06-10 | 1984-05-08 | Hughes Aircraft Company | Process for forming sulfide layers by photochemical vapor deposition |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5549971A (en) * | 1986-08-18 | 1996-08-27 | Clemson University | Laser assisted fiber growth |
| US4869893A (en) * | 1987-08-10 | 1989-09-26 | Hughes Aircraft Company | Preparation of high purity compounds of sulfur, selenium, and tellurium |
| US4942144A (en) * | 1989-01-23 | 1990-07-17 | Iowa State University Research Foundation, Inc. | Infrared transmitting glasses with high glass transition temperatures |
| US5077239A (en) * | 1990-01-16 | 1991-12-31 | Westinghouse Electric Corp. | Chalcogenide glass, associated method and apparatus |
| US5227149A (en) * | 1991-10-08 | 1993-07-13 | Sullivan Thomas M | Process for making silicon monosulfide and aluminum sulfide |
| US5779757A (en) * | 1996-06-26 | 1998-07-14 | The United States Of America As Represented By The Secretary Of The Navy | Process for removing hydrogen and carbon impurities from glasses by adding a tellurium halide |
| WO1999007645A1 (en) * | 1996-06-26 | 1999-02-18 | The Government Of The United States Of America Represented By The Secretary Of The Navy | Process for removing hydrogen and carbon impurities from glasses |
| US20060239882A1 (en) * | 2003-01-31 | 2006-10-26 | Seo Dong-Kyun | Preparation of metal chalcogenides from reactions of metal compounds and chalcogen |
| US7393516B2 (en) * | 2003-01-31 | 2008-07-01 | Seo Dong-Kyun | Preparation of metal chalcogenides from reactions of metal compounds and chalcogen |
| US20070074541A1 (en) * | 2003-10-10 | 2007-04-05 | University Of Southampton | Synthesis of germanium sulphide and related compounds |
| US10191186B2 (en) | 2013-03-15 | 2019-01-29 | Schott Corporation | Optical bonding through the use of low-softening point optical glass for IR optical applications and products formed |
Also Published As
| Publication number | Publication date |
|---|---|
| ATE29706T1 (de) | 1987-10-15 |
| EP0130594A1 (en) | 1985-01-09 |
| AU553297B2 (en) | 1986-07-10 |
| IT8367715A0 (it) | 1983-06-30 |
| NO158297C (no) | 1988-08-17 |
| NO158297B (no) | 1988-05-09 |
| EP0130594B1 (en) | 1987-09-16 |
| IT1161486B (it) | 1987-03-18 |
| BR8402970A (pt) | 1985-05-28 |
| CA1227320A (en) | 1987-09-29 |
| ES8606214A1 (es) | 1986-04-01 |
| ES533541A0 (es) | 1986-04-01 |
| DE130594T1 (de) | 1985-08-29 |
| AU2723484A (en) | 1985-01-03 |
| DK299684D0 (da) | 1984-06-19 |
| DE3466207D1 (en) | 1987-10-22 |
| DK299684A (da) | 1984-12-31 |
| JPS6021822A (ja) | 1985-02-04 |
| DK163295C (da) | 1992-07-06 |
| NO842438L (no) | 1985-01-02 |
| DK163295B (da) | 1992-02-17 |
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