US4459488A - Photoelectric converting apparatus for delivering a compensated signal - Google Patents

Photoelectric converting apparatus for delivering a compensated signal Download PDF

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Publication number
US4459488A
US4459488A US06/296,258 US29625881A US4459488A US 4459488 A US4459488 A US 4459488A US 29625881 A US29625881 A US 29625881A US 4459488 A US4459488 A US 4459488A
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United States
Prior art keywords
photoelectric converting
elements
shielded
converting
photoelectric
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Expired - Lifetime
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US06/296,258
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English (en)
Inventor
Shunichi Uzawa
Toshiyuki Komatsu
Seishiro Yoshioka
Masaki Fukaya
Yoshiaki Shirato
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Canon Inc
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Canon Inc
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Assigned to CANON KABUSHIKI KAISHA reassignment CANON KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: FUKAYA, MASAKI, KOMATSU, TOSHIYUKI, SHIRATO, YOSHIAKI, UZAWA, SHUNICHI, YOSHIOKA, SEISHIRO
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/40—Picture signal circuits
    • H04N1/401—Compensating positionally unequal response of the pick-up or reproducing head
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/291—Applications
    • Y10S136/293—Circuits

Definitions

  • the present invention relates to a photoelectric converting apparatus for converting optical information into electric signals.
  • Certain photoelectric converting apparatus are provided with groups of converting elements having photoelectric converting performance and a scanning circuit for time-sequentially collecting electric signals from said groups.
  • Such apparatus may be composed, for example, of combination of photodiodes and MOS field effect transistors (hereinafter called MOS type), or of a so-called charge transfer device (CTD) such as a charge-coupled device or a bucket brigade device.
  • MOS type MOS field effect transistors
  • CCD charge transfer device
  • the light-receiving area in the photoelectric converting part is inevitably limited by the dimension of the single crystal silicon wafer used as the substrate. Since the present technology only obtains a single crystal silicon wafer of several inches in diameter at a maximum in consideration of the uniformity over the entire area, the light-receiving area of such known photoelectric converting apparatus utilizing the MOS type of CTD technology based on such a silicon wafer cannot exceed the above-mentioned dimension.
  • the photoelectric converting apparatus having a light-receiving area of such limited dimension requires, for example in the application as an input unit for a digital copying machine, the use of an optical system of a high reduction rate between an original to be copied and the light-receiving area for focusing the image of said original onto the light-receiving area.
  • the original image projected onto the light-receiving area is reduced to a size of about 1/69, so that the effective resolving power of the apparatus to said original drops to about 1.5 lines/mm.
  • the effective resolving power is reduced in inverse proportion to the dimension of the original.
  • a photoelectric converting apparatus having a light-receiving area lengthened in size and improved in resolving power. Also there is proposed a photoelectric converting apparatus having photoelectric converting units on plural chips for projecting, dividedly, the image on said plural converting units, instead of utilizing a large single chip.
  • the photoelectric converting elements formed on different parts of the wafer or on different chips tend to show mutually different characteristics to receive mutually different effects by the external perturbation, thus providing uneven output signals.
  • the object of the present invention is to provide a photoelectric converting apparatus capable of providing output signals of uniform electric characteristic from different photoelectric converting elements.
  • Another object of the present invention is to provide a photoelectric converting apparatus capable of providing output signals of uniform electric characteristic by the use of compensating elements which can be extremely easily prepared at the production of the apparatus.
  • Still another object of the present invention is to provide a photoelectric converting apparatus capable of providing output signals of uniform electric characteristic by means of compensating elements of a number less than that of the photoelectric converting elements.
  • Still another object of the present invention is to provide a photoelectric converting apparatus, making use of a fact that the photoelectric converting elements show uniform characteristics at least locally, provided with light-shielded elements having the same characteristics as that of the photoelectric converting elements thereby realizing a high resolving power for a light amount while assuring a high signal-to-noise ratio.
  • the attached drawing is a circuit diagram of the photoelectric converting apparatus embodying the present invention.
  • Said photoelectric converting elements are divided into groups of 64 elements to provide the optical information entering consecutive 64 elements to signal lines D1 ⁇ D64 by means of scanning circuits composed of ⁇ (A1-1)-(A1-64) ⁇ ⁇ (A54-1)-(A54-64) ⁇ , ⁇ (Q1-1)-(Q1-64) ⁇ ⁇ (Q54-1)-(Q54-64) ⁇ , ⁇ (N1-1)-(N1-64) ⁇ ⁇ (N54-1)-(N54-64) ⁇ .
  • the optical information for example entering the first group of photoelectric converting elements S1-1 ⁇ S1-64 change the gate potentials of amplifying elements A1-1 ⁇ A1-64 whereby the channel resistances thereof vary corresponding to the amount of incident light.
  • selecting elements Q1-1 ⁇ Q1-64 are rendered conductive to connect said amplifying elements A1-1 ⁇ A1-64 to a power source V2, thereby supplying signal lines D1 ⁇ D64 with signals corresponding to the channel resistances of the amplifying elements A1-1 ⁇ A1-64.
  • a potential is given to a succeeding unrepresented selecting line K2 to obtain signals corresponding to another group of photoelectric converting elements S2-1 ⁇ S2-64 on said signal lines D1 ⁇ D64.
  • Resistance elements N1-1 ⁇ N1-64 are provided for giving current feedback to the amplifying elements A1-1 ⁇ A1-64 to compensate the fluctuation in the transmission characteristics thereof.
  • Compensating resistance elements B1-1 ⁇ B54-64 are composed of substantially the same materials as those of the photoelectric converting elements and are so designed to provide appropriate biases to said amplifying elements in the absence of incident light. Also said compensating resistance elements function to compensate the temperature-dependent change in the sensor.
  • Bias voltage control circuits Bi1 ⁇ Bi54 composed of resistors R1, L1, T1, transistors P1, W1, etc., are provided respectively corresponding to and in the vicinity of the groups of photoelectric converting elements for providing bias voltages to respective groups.
  • R1 is a reference resistance element formed simultaneously with and in the vicinity of the photoelectric converting elements S1-1 ⁇ S1-64 in such a manner as to have a characteristic similar to that of said converting elements, and is substantially completely shielded from light by a mask M1.
  • T1 is a bias resistance element formed simultaneously with and in the vicinity of the compensating resistance elements B1-1 ⁇ B1-64 in such a manner as to have a characteristic similar to that of said compensating elements.
  • Transistor P1 is formed on the same chip as the amplifying elements A1-1 ⁇ A1-64 to have the same characteristic as that of said amplifying elements, and provides a bias voltage through a drain load L1 and a source-follower transistor W1 to the photoelectric converting elements S1-1 ⁇ S1-64 and the reference resistance element R1 in such a manner that said transistor P1 has a determined channel resistance.
  • the presence of the bias voltage control circuit stabilized by the above-explained negative feed back function results in reduced deviation in the resistance of the photoelectric converting elements S1-1 ⁇ S1-64, the compensating resistance elements B1-1 ⁇ B1-64 and the threshold voltage of the amplifying elements A1-1 ⁇ A1-64, among the deviations of various characteristics of the photoelectric converting elements S1-1 ⁇ S1-64, thereby obtaining output signals corresponding to the received light.
  • a plurality of said control circuits positioned locally reduces the fluctuation range of said output signals to about ⁇ 2%, thus drastically improving the accuracy of measurement of the amount of incident light.
  • the photoconductive elements employed in the foregoing embodiment can naturally be replaced by other suitable photoelectric converting elements. Also it will be evident that the control may be exerted locally on the bias source at the compensating resistance elements.
US06/296,258 1980-09-10 1981-08-26 Photoelectric converting apparatus for delivering a compensated signal Expired - Lifetime US4459488A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP55125493A JPS5750178A (en) 1980-09-10 1980-09-10 Photoelectric converter
JP55-125493 1980-09-10

Publications (1)

Publication Number Publication Date
US4459488A true US4459488A (en) 1984-07-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
US06/296,258 Expired - Lifetime US4459488A (en) 1980-09-10 1981-08-26 Photoelectric converting apparatus for delivering a compensated signal

Country Status (3)

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US (1) US4459488A (de)
JP (1) JPS5750178A (de)
DE (1) DE3135740A1 (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752694A (en) * 1987-01-12 1988-06-21 Honeywell Inc. Array uniformity correction
US4886977A (en) * 1986-11-11 1989-12-12 Canon Kabushiki Kaisha Photoelectric converter provided with voltage dividing means
US5262873A (en) * 1990-11-07 1993-11-16 Canon Kabushiki Kaisha Image signal correcting in image data processing requiring only small memory capacity
US5642070A (en) * 1991-06-27 1997-06-24 Canon Kabushiki Kaisha Signal processing circuit and system for detection of absolute value
US20050170236A1 (en) * 2004-01-30 2005-08-04 Satoru Watanabe Fuel cell membrane electrode and fuel cell
US7501647B2 (en) 2004-01-25 2009-03-10 Manroland Ag Apparatus and method for acquiring and evaluating an image from a predetermined extract of a printed product

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3221520A1 (de) * 1982-06-08 1984-03-01 Telefunken electronic GmbH, 7100 Heilbronn Anordnung mit mehreren phototransistoren
DE3221519A1 (de) * 1982-06-08 1984-03-08 Telefunken electronic GmbH, 7100 Heilbronn Anordnung zur uebertragung von information mittels elektrischer signale
DE3448323C2 (de) * 1983-09-27 1990-11-22 Kyocera Corp Photoelektrische Wandlereinrichtung
US4673821A (en) 1983-09-27 1987-06-16 Kyocera Corporation Photoelectric converter device having reduced output noise
JPH0410664A (ja) * 1990-04-27 1992-01-14 Nec Corp 受光素子アレイ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717770A (en) * 1971-08-02 1973-02-20 Fairchild Camera Instr Co High-density linear photosensor array
US3856989A (en) * 1972-09-25 1974-12-24 Rca Corp Sensors having charge transfer recycling means
US4300163A (en) * 1978-12-08 1981-11-10 Matsushita Electric Industrial Co., Ltd. Solid-state imaging apparatus
US4350886A (en) * 1980-02-25 1982-09-21 Rockwell International Corporation Multi-element imager device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3544713A (en) * 1968-09-03 1970-12-01 Marquardt Corp Solid state electro-optical contact scanner

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717770A (en) * 1971-08-02 1973-02-20 Fairchild Camera Instr Co High-density linear photosensor array
US3856989A (en) * 1972-09-25 1974-12-24 Rca Corp Sensors having charge transfer recycling means
US4300163A (en) * 1978-12-08 1981-11-10 Matsushita Electric Industrial Co., Ltd. Solid-state imaging apparatus
US4350886A (en) * 1980-02-25 1982-09-21 Rockwell International Corporation Multi-element imager device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886977A (en) * 1986-11-11 1989-12-12 Canon Kabushiki Kaisha Photoelectric converter provided with voltage dividing means
US4752694A (en) * 1987-01-12 1988-06-21 Honeywell Inc. Array uniformity correction
US5262873A (en) * 1990-11-07 1993-11-16 Canon Kabushiki Kaisha Image signal correcting in image data processing requiring only small memory capacity
US5642070A (en) * 1991-06-27 1997-06-24 Canon Kabushiki Kaisha Signal processing circuit and system for detection of absolute value
US7501647B2 (en) 2004-01-25 2009-03-10 Manroland Ag Apparatus and method for acquiring and evaluating an image from a predetermined extract of a printed product
US20050170236A1 (en) * 2004-01-30 2005-08-04 Satoru Watanabe Fuel cell membrane electrode and fuel cell

Also Published As

Publication number Publication date
DE3135740A1 (de) 1982-05-06
DE3135740C2 (de) 1990-03-22
JPS5750178A (en) 1982-03-24

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Owner name: CANON KABUSHIKI KAISHA, 30-2, 3-CHOME, SHIMOMARUKO

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Effective date: 19810820

Owner name: CANON KABUSHIKI KAISHA, JAPAN

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