US3914136A - Method of making a transmission photocathode device - Google Patents
Method of making a transmission photocathode device Download PDFInfo
- Publication number
- US3914136A US3914136A US309756A US30975672A US3914136A US 3914136 A US3914136 A US 3914136A US 309756 A US309756 A US 309756A US 30975672 A US30975672 A US 30975672A US 3914136 A US3914136 A US 3914136A
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- US
- United States
- Prior art keywords
- layer
- type
- photocathode
- semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
Definitions
- the method provides for a virtually perfect lattice match between the semiconductor layers UNITED STATES PATENTS thereby increasing the efficiency of the photocathode 3,364,084 H1968 Ruehrwein 148/175 eliminating lattice defects which would otherwise i l t i 11 3/ 3] exist at the interface between the transmitting material [688B 6 3.
- the present invention relates to transmission photocathode devices and to a method of making the same and more particularly relates to transmission photocathodes which make use of the negative-electronaffinity principle and to a method for making such devices.
- Photocathodes comprising P type semiconductor layers activated with an alkali metal or an alkali metaloxygen combination having a low work function are known in the photocathode art.
- One such photocathode is described by Van Laar and Scheer in US. Pat; No. 3,387,161. These photocathodes consist of a material that emits electrons when exposed to radiant energy. Van Laar and Scheer describe an opaque photocathode of the type which emits electrons from the same side as that struck by light which is incident on the photoemissive material.
- a second type of photocathode the semitransparent or transmission photocathode, has a photoemissive layer or absorber on a transparent medium. Electrons are emitted from the side of the photocathode opposite the side upon which the radiation is incident on the transparent medium.
- a transmission photocathode which comprises an absorption layer of P type semiconductor material having a first side and a second side; a transmission layer of P. type semiconductor material adjacent the first side of the absorption layer, the transmission layer comprising a semiconductor material having lattice parameters which are within 0.5% of the lattice parameters of the absorption layer, and the transmission layer having a higher bandgap energy than the absorption layer, the bandgap energy of the transmission layer being at least 1.1 electron volts; and a coating of a work-function-reducing activation layer on the second side of the absorption semiconductor layer.
- Also presented is a method for making a transmission photocathode device comprising the steps of epitaxially growing a P type layer of'a semiconductor material on a substrate of a like semiconductor material; growing a second semiconductor layer upon the P type layer, the second semiconductor layer being 'of a material with a higher bandgap energy than the P type layer; removing the substrate to expose the P type layer; and coating the exposed P type layer with a work-functionreducing activation layer.
- FIG. 1 is a sectional view of one embodiment of a transmission photocathode device made by the method of the present invention.
- FIG. 2 is a sectional view of a semiconductor substrate with two epitaxially grown semiconductor layers.
- FIG. 3 is a sectional view of the transmission photocathode device of FIG. 1 prior to the application of the activation layer.
- FIG. 4 is a sectional view of a multiplebin refractory furnace boat which is suitable for carrying out the method of the present invention.
- the transmission photocathode l0 comprises a transmission layer 12 on one side of an absorption layer 14. Coated onto the other side of the absorption layer 14 is a workfunction-reducing activation layer 16.
- the transmission photocathode 10 of the preferred embodiment is fabricated with III-V semiconductor material. However, II-VI compounds may also be used, either alone or in conjunction with III-V compounds, to construct a transmission photocathode 10 according to the method of the present invention. In the preferred embodiment shown in FIG.
- the absorption layer 14 comprises the binary III-V compound gallium arsenide, GaAs, doped to provide a P type conductivity and preferably having an acceptor concentration of at least 5 X 10 atoms per cm".
- the transmission layer 12 comprises the ternary III-V compound aluminum-gallium arsenide, (Al- Ga)As.
- the activation layer 16 comprises an alkali metal such as cesium or an alkali metal-oxygen combination such as cesium-oxygen which is used in the preferred embodiment.
- a low defect substrate of gallium arsenide, GaAs, 18 will be used as the basis for fabricating the transmission photocathode 10.
- a low defect substrate is one which has less than 10 dislocations per cm.
- GaAs substrate 18 which may be melt grown.
- a P type GaAs layer 14 is grown.
- the method of liquid phase epitaxy is used to fabricate the photocathode 10.
- the acceptor impurity of the preferred embodiment is germanium, a Group IV element, which replaces atoms of arsenic for the most part in the crystal structure of GaAs to yield a P type material.
- the P type GaAs layer 14 is typically 2 um thick.
- AlGa aluminum-gallium arsenide
- the growth of-the (AlGa)As layer is also accomplished through the method of liquid phase epitaxy in the preferred embodiment of the method of the present invention.
- the (AlGa)As layer 12 may have an aluminum concentration of about 30 to 50%. In the preferred embodiment the aluminum concentration is about 30%.
- (AlGa)As is a ternary III-V compound having a higher bandgap energy than the binary lIlV compound GaAs.
- the increased bandgap of (AlGa)As makes it transparent to light ofa lower wavelength than will pass through GaAs.
- (AlGa)As has a lattice structure having parameters which are extremely close to the lattice parameters of GaAs. Therefore, relatively few lattice defects will occur at the interface between the GaAs layer 14 and the (AlGa)As layer 12.
- the thickness of the (AlGa)As layer 12 is not important but will generally be made on the order of about 125 am in order to provide support for the photocathode 10.
- the (AlGa)As layer may also be made P type in order to prevent the formation of a junction in the device, as a junction would impedethe free flow of electrons.
- a multiple-bin refractory furnace boat 22 such as that described by Nelson in U.S. Pat. No. 3,565,702 is shown.
- the boat 22 is provided with three wells 24, 26, 27 and a movable. slide 28 which is suitably made of a refractory material such as graphite.
- the slide 28 has an upper surface which is coplanar with the plane of the bottom of each of the bins 24, 26, 27.
- a slot 34 is provided in the upper surface near one end of the slide 28. The slot 34 is large enough to accommodate the GaAs substrate 18 which is positioned in the slot 34 so that the substrate has the surface upon which layers are to be grown uppermost.
- the exposed upper surface of the substrate 18 is cleaned and polished before the substrate 18 is positioned in the slot 34 of the slide 28.
- a first charge is introduced into the bin 24 and a second charge is introduced into the bin 26.
- the first charge may consist of 5 g. of Ga, 550 mg. of GaAs, and 100 mg. of Ge
- a second charge may consist of 5 g. of Ga, 250 mg. of GaAs, 200 mg. of Ge, and 6 mg. of Al.
- the charges may be granulated solids at room temperatures.
- the loaded furnace boat 22 is then positioned in a furnace. A flow ofhigh purity hydrogen is maintained through the furnace and. over the furnace boat 22 while the temperature of the furnace and its contents is increased from about 20C. to about 920C. in about 20 minutes.
- the power isthen turned off and the furnace boat with its contents is allowed to cool at a rate of about 3 to 5C. per minute.
- the first charge becomes the first melt or solution 36, which in this example consists principally of GaAs dissolved in molten gallium with a germanium conductivity modifier capable of acting as an acceptor and induc-
- the slide 28 is pulled in the direction shown by the arrow so that the substrate 18 becomes the floor of the first bin 24.
- the substrate 18 is allowed to remain in this position until the temperature reaches 880C.
- some of the GaAs dissolved in the first melt 36 precipitates:
- the epitaxial layer 14 is of P type conductivity because some germanium is incorporated in the crystal latticeof the epitaxial layer 14.
- the slide 28 is now moved in the direction shown by the arrow so that the substrate 18 becomes the floor of the second bin .26.
- the substrate 18 is now permitted to cool to a temperature of about 850C. while in contact with the second melt 38.
- a second epitaxial layer 12 is deposited on the first epitaxial layer 14.
- Some of the aluminum present in the second melt 38 is also incorporated in the second epitaxial layer replacing some of the Ga atoms in the layer so that the second epitaxial layer is also a mixed com-:
- phase epitaxy the substrate 18 is placed in a chamber into which is passed a gas containing the element or elements of the particular semiconductor material. The chamber is heated to a temperature at which the gas reacts to form the semiconductor material which deposits on the surface of the substrate.
- the Group Ill-V compound semiconductor materialsand alloys thereof can. be deposited in the manner described in the article of.
- the I substrate 18 is etched away in order to expose the surface 20 of the absorption layer 14 as shown in FIG. 3.
- Caros acid may be used for this etching process.
- Portions 19 of the substrate 18 maybe protected during the etching process by a wax coating.
- the wax coating is removed following the etching process in order to provide for structural members 19 which may be used to strengthen and as a means for handling the photocathode 10.
- the newly-exposed surface of the absorption layer 14 has a workfunction-reducing activation layer 16 coated onto it.
- This activation layer 16 is comprised of a low workfunction alkali metal or alkali metal-oxygen layer.
- a coating of cesium-oxygen may be used for the activation layer 16.
- Cesium may be generated using either a vapor source consisting of a mixture of cesium chromate and silicon contained in a nickel tube, or an ion source consisting basically of sintered alumina impregnated with cesium carbonate.
- the coverage of the absorption layer 14 may be effected by the alternate exposure of the surface of the absorption layer 14 to cesium and oxygen at room temperature as per the method described in the article of A. A. Turnbull and G. B. Evans entitled Photoemission From GaAs-Cs- O, BRIT. J. APPL. PHYS., Ser. 2, Vol. I, p. 155, 1968.
- the advantage of this method of fabrication is that a low surface recombination interface will exist between the GaAs layer 14 and the (AlGa)As layer 12. Furthermore, because the GaAs layer 14 is grown on a GaAs substrate 18 there is a perfect lattice match. lf the (Al- Ga)As layer 12 was grown first this would not have been the case, as pure crystalline (AlGa)As is generally not available. The dislocation density and hence the diffusion length in the P type region 14 will be unaffected by the growth of the (AlGa)As layer 12.
- GaAs a binary [ll-V compound, and (AlGa)As, a ternary lIl-V compound, other binary and ternary Ill-V compounds such as gallium antimonide, Crash, and aluminum-gallium antimonide, (AlGa)Sb, or gallium phosphide, GaP, and aluminum-gallium phosphide (Al- Ga)P, may be used with slight differences between lattice parameter matching and transmission frequency of the photocathodes formed with these other materials.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US309756A US3914136A (en) | 1972-11-27 | 1972-11-27 | Method of making a transmission photocathode device |
IT30341/73A IT998785B (it) | 1972-11-27 | 1973-10-19 | Fotocatodo a trasmissione e metodo di fabbricazione dello stesso |
GB5214573A GB1452917A (en) | 1972-11-27 | 1973-11-09 | Transmission photocathode device and method of making the same |
CA186,140A CA998155A (en) | 1972-11-27 | 1973-11-19 | Transmission photocathode device and method of making the same |
FR7341951A FR2208187B1 (et) | 1972-11-27 | 1973-11-26 | |
NL7316145A NL7316145A (et) | 1972-11-27 | 1973-11-26 | |
JP13297273A JPS531142B2 (et) | 1972-11-27 | 1973-11-26 | |
DE2359072A DE2359072C3 (de) | 1972-11-27 | 1973-11-27 | Verfahren zur Herstellung einer Durchsicht-Photokathode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US309756A US3914136A (en) | 1972-11-27 | 1972-11-27 | Method of making a transmission photocathode device |
Publications (2)
Publication Number | Publication Date |
---|---|
USB309756I5 USB309756I5 (et) | 1975-01-28 |
US3914136A true US3914136A (en) | 1975-10-21 |
Family
ID=23199555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US309756A Expired - Lifetime US3914136A (en) | 1972-11-27 | 1972-11-27 | Method of making a transmission photocathode device |
Country Status (8)
Country | Link |
---|---|
US (1) | US3914136A (et) |
JP (1) | JPS531142B2 (et) |
CA (1) | CA998155A (et) |
DE (1) | DE2359072C3 (et) |
FR (1) | FR2208187B1 (et) |
GB (1) | GB1452917A (et) |
IT (1) | IT998785B (et) |
NL (1) | NL7316145A (et) |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3959037A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
US3959038A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
US3960620A (en) * | 1975-04-21 | 1976-06-01 | Rca Corporation | Method of making a transmission mode semiconductor photocathode |
US3972750A (en) * | 1975-04-30 | 1976-08-03 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
US4000503A (en) * | 1976-01-02 | 1976-12-28 | International Audio Visual, Inc. | Cold cathode for infrared image tube |
US4008106A (en) * | 1975-11-13 | 1977-02-15 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating III-V photocathodes |
US4015284A (en) * | 1974-03-27 | 1977-03-29 | Hamamatsu Terebi Kabushiki Kaisha | Semiconductor photoelectron emission device |
US4107723A (en) * | 1977-05-02 | 1978-08-15 | Hughes Aircraft Company | High bandgap window layer for GaAs solar cells and fabrication process therefor |
US4311743A (en) * | 1978-09-29 | 1982-01-19 | Licentia Patent-Verwaltungs Gmbh | Semiconductor-glass composite material and method for producing it |
WO1984002616A1 (en) * | 1982-12-27 | 1984-07-05 | Western Electric Co | Semiconductor laser crt target |
US4498225A (en) * | 1981-05-06 | 1985-02-12 | The United States Of America As Represented By The Secretary Of The Army | Method of forming variable sensitivity transmission mode negative electron affinity photocathode |
US4782028A (en) * | 1987-08-27 | 1988-11-01 | Santa Barbara Research Center | Process methodology for two-sided fabrication of devices on thinned silicon |
WO1989000883A1 (en) * | 1987-08-06 | 1989-02-09 | Phrasor Scientific, Inc. | High mass ion detection system and method |
US4830984A (en) * | 1987-08-19 | 1989-05-16 | Texas Instruments Incorporated | Method for heteroepitaxial growth using tensioning layer on rear substrate surface |
US4853595A (en) * | 1987-08-31 | 1989-08-01 | Alfano Robert R | Photomultiplier tube having a transmission strip line photocathode and system for use therewith |
US4906894A (en) * | 1986-06-19 | 1990-03-06 | Canon Kabushiki Kaisha | Photoelectron beam converting device and method of driving the same |
US5404026A (en) * | 1993-01-14 | 1995-04-04 | Regents Of The University Of California | Infrared-sensitive photocathode |
WO1996004675A1 (en) * | 1994-07-29 | 1996-02-15 | Litton Systems, Inc. | TRANSMISSION MODE 1.06νM PHOTOCATHODE FOR NIGHT VISION AND METHOD |
US5977705A (en) * | 1996-04-29 | 1999-11-02 | Litton Systems, Inc. | Photocathode and image intensifier tube having an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both |
WO1999060598A1 (en) * | 1998-05-18 | 1999-11-25 | The Regents Of The University Of California | Low work function, stable compound clusters and generation process |
US6110758A (en) * | 1995-09-13 | 2000-08-29 | Litton Systems, Inc. | Transmission mode photocathode with multilayer active layer for night vision and method |
US20040140432A1 (en) * | 2002-10-10 | 2004-07-22 | Applied Materials, Inc. | Generating electrons with an activated photocathode |
US20060055321A1 (en) * | 2002-10-10 | 2006-03-16 | Applied Materials, Inc. | Hetero-junction electron emitter with group III nitride and activated alkali halide |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3959045A (en) * | 1974-11-18 | 1976-05-25 | Varian Associates | Process for making III-V devices |
Citations (8)
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US3364084A (en) * | 1959-06-18 | 1968-01-16 | Monsanto Co | Production of epitaxial films |
US3478213A (en) * | 1967-09-05 | 1969-11-11 | Rca Corp | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon |
US3537029A (en) * | 1968-06-10 | 1970-10-27 | Rca Corp | Semiconductor laser producing light at two wavelengths simultaneously |
US3560275A (en) * | 1968-11-08 | 1971-02-02 | Rca Corp | Fabricating semiconductor devices |
GB1239893A (en) * | 1970-03-05 | 1971-07-21 | Standard Telephones Cables Ltd | Improvements in or relating to photocathodes |
US3604991A (en) * | 1969-04-01 | 1971-09-14 | Nippon Electric Co | Injection-type semiconductor laser element |
US3672992A (en) * | 1969-07-30 | 1972-06-27 | Gen Electric | Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response |
US3770518A (en) * | 1971-01-28 | 1973-11-06 | Varian Associates | Method of making gallium arsenide semiconductive devices |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3565702A (en) * | 1969-02-14 | 1971-02-23 | Rca Corp | Depositing successive epitaxial semiconductive layers from the liquid phase |
US3622442A (en) * | 1969-08-21 | 1971-11-23 | Du Pont | Non-woven fibrous webs bonded with cross-linked ethylene/carboxylic acid copolymers and methods of making same |
US3699401A (en) * | 1971-05-17 | 1972-10-17 | Rca Corp | Photoemissive electron tube comprising a thin film transmissive semiconductor photocathode structure |
-
1972
- 1972-11-27 US US309756A patent/US3914136A/en not_active Expired - Lifetime
-
1973
- 1973-10-19 IT IT30341/73A patent/IT998785B/it active
- 1973-11-09 GB GB5214573A patent/GB1452917A/en not_active Expired
- 1973-11-19 CA CA186,140A patent/CA998155A/en not_active Expired
- 1973-11-26 NL NL7316145A patent/NL7316145A/xx not_active Application Discontinuation
- 1973-11-26 FR FR7341951A patent/FR2208187B1/fr not_active Expired
- 1973-11-26 JP JP13297273A patent/JPS531142B2/ja not_active Expired
- 1973-11-27 DE DE2359072A patent/DE2359072C3/de not_active Expired
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3364084A (en) * | 1959-06-18 | 1968-01-16 | Monsanto Co | Production of epitaxial films |
US3478213A (en) * | 1967-09-05 | 1969-11-11 | Rca Corp | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon |
US3537029A (en) * | 1968-06-10 | 1970-10-27 | Rca Corp | Semiconductor laser producing light at two wavelengths simultaneously |
US3560275A (en) * | 1968-11-08 | 1971-02-02 | Rca Corp | Fabricating semiconductor devices |
US3604991A (en) * | 1969-04-01 | 1971-09-14 | Nippon Electric Co | Injection-type semiconductor laser element |
US3672992A (en) * | 1969-07-30 | 1972-06-27 | Gen Electric | Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response |
GB1239893A (en) * | 1970-03-05 | 1971-07-21 | Standard Telephones Cables Ltd | Improvements in or relating to photocathodes |
US3770518A (en) * | 1971-01-28 | 1973-11-06 | Varian Associates | Method of making gallium arsenide semiconductive devices |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4015284A (en) * | 1974-03-27 | 1977-03-29 | Hamamatsu Terebi Kabushiki Kaisha | Semiconductor photoelectron emission device |
US3960620A (en) * | 1975-04-21 | 1976-06-01 | Rca Corporation | Method of making a transmission mode semiconductor photocathode |
US3959037A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
US3959038A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
US3972750A (en) * | 1975-04-30 | 1976-08-03 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
US4008106A (en) * | 1975-11-13 | 1977-02-15 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating III-V photocathodes |
US4000503A (en) * | 1976-01-02 | 1976-12-28 | International Audio Visual, Inc. | Cold cathode for infrared image tube |
US4107723A (en) * | 1977-05-02 | 1978-08-15 | Hughes Aircraft Company | High bandgap window layer for GaAs solar cells and fabrication process therefor |
US4311743A (en) * | 1978-09-29 | 1982-01-19 | Licentia Patent-Verwaltungs Gmbh | Semiconductor-glass composite material and method for producing it |
US4498225A (en) * | 1981-05-06 | 1985-02-12 | The United States Of America As Represented By The Secretary Of The Army | Method of forming variable sensitivity transmission mode negative electron affinity photocathode |
WO1984002616A1 (en) * | 1982-12-27 | 1984-07-05 | Western Electric Co | Semiconductor laser crt target |
US4906894A (en) * | 1986-06-19 | 1990-03-06 | Canon Kabushiki Kaisha | Photoelectron beam converting device and method of driving the same |
WO1989000883A1 (en) * | 1987-08-06 | 1989-02-09 | Phrasor Scientific, Inc. | High mass ion detection system and method |
US4896035A (en) * | 1987-08-06 | 1990-01-23 | Phrasor Scientific, Inc. | High mass ion detection system and method |
US4830984A (en) * | 1987-08-19 | 1989-05-16 | Texas Instruments Incorporated | Method for heteroepitaxial growth using tensioning layer on rear substrate surface |
US4782028A (en) * | 1987-08-27 | 1988-11-01 | Santa Barbara Research Center | Process methodology for two-sided fabrication of devices on thinned silicon |
US4853595A (en) * | 1987-08-31 | 1989-08-01 | Alfano Robert R | Photomultiplier tube having a transmission strip line photocathode and system for use therewith |
US5404026A (en) * | 1993-01-14 | 1995-04-04 | Regents Of The University Of California | Infrared-sensitive photocathode |
WO1996004675A1 (en) * | 1994-07-29 | 1996-02-15 | Litton Systems, Inc. | TRANSMISSION MODE 1.06νM PHOTOCATHODE FOR NIGHT VISION AND METHOD |
US5506402A (en) * | 1994-07-29 | 1996-04-09 | Varo Inc. | Transmission mode 1.06 μM photocathode for night vision having an indium gallium arsenide active layer and an aluminum gallium azsenide window layer |
US5610078A (en) * | 1994-07-29 | 1997-03-11 | Litton Systems, Inc. | Method for making transmission mode 1.06μm photocathode for night vision |
US6110758A (en) * | 1995-09-13 | 2000-08-29 | Litton Systems, Inc. | Transmission mode photocathode with multilayer active layer for night vision and method |
US5977705A (en) * | 1996-04-29 | 1999-11-02 | Litton Systems, Inc. | Photocathode and image intensifier tube having an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both |
US6116976A (en) * | 1996-04-29 | 2000-09-12 | Litton Systems, Inc. | Photocathode and image intensifier tube having an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both |
WO1999060598A1 (en) * | 1998-05-18 | 1999-11-25 | The Regents Of The University Of California | Low work function, stable compound clusters and generation process |
US20040140432A1 (en) * | 2002-10-10 | 2004-07-22 | Applied Materials, Inc. | Generating electrons with an activated photocathode |
US20060055321A1 (en) * | 2002-10-10 | 2006-03-16 | Applied Materials, Inc. | Hetero-junction electron emitter with group III nitride and activated alkali halide |
US7015467B2 (en) | 2002-10-10 | 2006-03-21 | Applied Materials, Inc. | Generating electrons with an activated photocathode |
US7446474B2 (en) | 2002-10-10 | 2008-11-04 | Applied Materials, Inc. | Hetero-junction electron emitter with Group III nitride and activated alkali halide |
Also Published As
Publication number | Publication date |
---|---|
JPS531142B2 (et) | 1978-01-14 |
FR2208187A1 (et) | 1974-06-21 |
FR2208187B1 (et) | 1978-06-16 |
DE2359072B2 (de) | 1978-03-30 |
IT998785B (it) | 1976-02-20 |
CA998155A (en) | 1976-10-05 |
DE2359072C3 (de) | 1978-11-09 |
JPS4984575A (et) | 1974-08-14 |
DE2359072A1 (de) | 1974-06-06 |
NL7316145A (et) | 1974-05-29 |
USB309756I5 (et) | 1975-01-28 |
GB1452917A (en) | 1976-10-20 |
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