US3899449A - Low temperature coefficient of resistivity cermet resistors - Google Patents
Low temperature coefficient of resistivity cermet resistors Download PDFInfo
- Publication number
- US3899449A US3899449A US359244A US35924473A US3899449A US 3899449 A US3899449 A US 3899449A US 359244 A US359244 A US 359244A US 35924473 A US35924473 A US 35924473A US 3899449 A US3899449 A US 3899449A
- Authority
- US
- United States
- Prior art keywords
- weight percent
- range
- present
- composition
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011195 cermet Substances 0.000 title claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 34
- 229910001935 vanadium oxide Inorganic materials 0.000 claims abstract description 25
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims abstract description 23
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims abstract description 23
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract description 23
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims description 55
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical group O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 22
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 15
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052707 ruthenium Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 229910052741 iridium Inorganic materials 0.000 claims description 8
- 229910000464 lead oxide Inorganic materials 0.000 claims description 8
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 7
- 239000000292 calcium oxide Substances 0.000 claims description 7
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 7
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 6
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 6
- 239000007858 starting material Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000012811 non-conductive material Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910001925 ruthenium oxide Inorganic materials 0.000 abstract description 4
- 229910000457 iridium oxide Inorganic materials 0.000 abstract description 3
- ROZSPJBPUVWBHW-UHFFFAOYSA-N [Ru]=O Chemical class [Ru]=O ROZSPJBPUVWBHW-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 22
- 230000009258 tissue cross reactivity Effects 0.000 description 17
- 238000000034 method Methods 0.000 description 12
- 239000000470 constituent Substances 0.000 description 6
- 229910052720 vanadium Inorganic materials 0.000 description 6
- 239000002243 precursor Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 3
- 241000212384 Bifora Species 0.000 description 2
- 108091008874 T cell receptors Proteins 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- QUEDYRXQWSDKKG-UHFFFAOYSA-M [O-2].[O-2].[V+5].[OH-] Chemical compound [O-2].[O-2].[V+5].[OH-] QUEDYRXQWSDKKG-UHFFFAOYSA-M 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- DWPDSISGRAWLLV-JHZYRPMRSA-L calcium;(1r,4ar,4br,10ar)-1,4a-dimethyl-7-propan-2-yl-2,3,4,4b,5,6,10,10a-octahydrophenanthrene-1-carboxylate Chemical compound [Ca+2].C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C([O-])=O.C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C([O-])=O DWPDSISGRAWLLV-JHZYRPMRSA-L 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- PWRYKCFNWWHKLP-UHFFFAOYSA-N ruthenium;hydrate Chemical compound O.[Ru] PWRYKCFNWWHKLP-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
- H01C17/0654—Oxides of the platinum group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
Definitions
- vanadium oxide is used in conjunction with noble metal metallizing compositions in relatively small amounts to prevent agglomeration of the metal particles and to improve the solderability, conductivity and/or adhesion properties of the metallizing materials.
- the same indication of improvement in solderability for these compositions by adding vanadium pentoxide is also indicated in US. Pat. No. 3,440,182.
- vanadium pentoxide is uti lized to control TCR in a resistor composition of the bismuth ruthenate type which utilizes a glass frit binder consisting of 80% lead oxide, 10 si1icon oxide and 10% boron oxide.
- 'Aglass was prepared from the teachings of this particular patentand combined with a conductive phase used to fabricate the-resistors of this invention composedfi'of.
- ruthenium dioxide; vanadium pentoxide, and aluminum trioxide as set forth in Example l 1. It had a sheet resistiyity of .5.49K ohm/sq./mil.
- This glass material was combined with a conductive material composed of ruthenium dioxide in an amount of 5.34 w eight percent preparedfrom ruthenium resinate containing 5.26 weight pereentruthenium dioxide, iridium dioxide in an amount of 7v.2 weight percent pre pared from iridium resinate containing 6.99 weight percent iridium dioxide, 2.95 weightpercent bismuth trioxide, 4.18 weight percentvanadiurn pentoxide and the previously described glass in the; ,amount .of 80.41 weight percent.
- the resistivelmaterial prepared had a sheet resistivityof 24,000 ohms/sqjmil.
- the cermet resistor composition of this invention can be prepared either by utilizing the ruthenium and iridfium dioxides in a resinate form for ultimate conversion to the dioxidefor can be prepared by utilizing the ruthenium and/or iridium dioxides themselves as starting materials.
- a description of'the cermet resistor composition' as prepared from the resinates of ruthenium and iridium will first be" given.
- the particular resinates of ruthenium and iridium employed in the Examples of Table III andin" Examples 20, 21 and 22 are designated A-l 124 arid A-l 123, respectively, by the supplier, Engelhard Industries, Inc., 'I-lanovia Liquid Gold Division of East Newark; N. J. They are resinate solutions containing4l0% ruthenium or'5.26% ruthenium dioxide and 6.0% iridium or 6.99% iridium dioxide, respectively.
- the range of starting materials for the resinateprepared compositions and for the glass are described in the following Tables I and II.
- the vehicle may consist of any number of high boiling point organic liquids such as l-ethyl-2-hexanol which, in combination with the resistive powder, have a viscosity suitable for screen printing, dipping, or painting onto a substrate.
- Example 20 illustrates the utilization of vanadium pentoxide predissolved in the glass desig- 5 nated FB-l99N to the extent of 6.48% b wei ht. 2.
- MIX constituents together 1n a ball mill with acey g tone to form a slurry and ball mill with a grinding me- Example 20 dium alumina for 0.1 to 8.0 hours.
- Type A* Type P" 1:0 wt. '7 v. ,o wt. /1 2.83 2.77 3.15 1.90 1.90 1.50 1.73 1.73 A1 O wt. 0.75 1.41 6.90 7.00 a.
- Glass FB-199N *** wt. /1 90.73 90.26 85.22 94.1 86.50 i94.75 92.49 92.49 Average Sheer v Resistivity**** 6180 8600 27,900 53,200 1 12,900 449,100 400,000 30,000
- This material is processed in the same method as indicated for the oxide starting materials under the head- 60 ing Oxide Method.”
- vanadium oxide can be introduced through a vanadiuni'resirrate precursor material. Examples 21 and 22 following illustrate these.
- Example 21 Ingredients 7( By Weight Oxide Ruthenium Resinate 10.48 (5.26% RuO Iridium Resinate 13.93 (6.99% lrO. V 0 4.84 Bi Q, 3.02 Glass FB- 199N (As indicated in Tables Ill and V) 67.72
- Example 22 indicates utilization of vanadium oxide introduced as vanadium resinate.
- Example 22 Results: Sheet Resistivity: 280 ohmslsqjmil. TCR ppm/"C:
- the important conditions for achieving the low temperature coefficient of resistivity are the utilization of vanadium oxide with ruthenium dioxide, which preferably can also include iridium dioxide, in the designated amount with a particular glass composition.
- the vanadium oxide as well as the ruthenium and iridium dioxides can be utilized as oxides or derived from resinate precursors. While vanadium pentoxide is the preferred oxide of vanadium, other oxides such as vanadium trioxide or those oxides resulting from the pyrolysis of vanadium resinate can likewise be employed to advantage.
- cermet resistor composition having a low temperature coefficient of resistivity which can be effected at the extremes and generally less than 20 ppm/C, maintained over a broad temperature range.
- the vanadium oxide can be utilized in various stages of oxidation and in the form of theresinate as can the ruthenium and the iridium dioxides.
- the materials are easily processed into resistive paints. No additional capital investment need be incurred to substitute the cermet resistor compositions of this invention for more conventional compositions, and they can be easily fabricated into thick film resistors without additional skills being required by the fabricator.
- a substrate composed ofhigh temperature, electrically nonconductive material comprising: a conductive phase composed of vanadium oxide in the range from about 1.00 to about 10.00 weight'percent and ruthenium dioxide in the range of from about 1 .00 to about 30.00 weight percent, and an interdispersed glass phase in the range of about 50100 to about 98.00 weight percent, said glass phase composed of lead oxide in the range of about 35.00 to about 45.00 weight percent, boron trioxide in the range of about 15.00 to about 25.00 weight percent and silicon dioxide present in the range of about 30.00 to about 40.00 weight percent.
- the cermet resistor composition as defined in claim 1 further including iridium dioxide present in the range of about 1.00 to about 15.00 weight percent.
- cermet resistor composition as defined in claim 3 wherein said glass phase is composed of lead oxide present in the range of about 38.00 to about 45.00 weight percent, said boron trioxide is present in the range of about 17.00 to about 21.00 and said silicon dioxide is present in the range of about 33.00 to about 37.00 weight percent.
- composition as defined in claim 2 wherein said composition further includes bismuth trioxide present in an amount not greater than about 10.00 weight percent.
- composition as defined in claim 2 wherein said composition includes aluminum trioxide present in an amount not greater than about 10.00 weight percent.
- glass frit present in the range of about 5.00 to 40.00 weight percent, said glass frit comprising lead oxide present in the range of about 35.00
- composition as defined in claim 11 further 5
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Non-Adjustable Resistors (AREA)
- Conductive Materials (AREA)
- Details Of Resistors (AREA)
- Glass Compositions (AREA)
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US359244A US3899449A (en) | 1973-05-11 | 1973-05-11 | Low temperature coefficient of resistivity cermet resistors |
| CA197,202A CA1037705A (en) | 1973-05-11 | 1974-04-09 | Low temperature coefficient of resistivity cermet resistors |
| AU67890/74A AU479484B2 (en) | 1973-05-11 | 1974-04-16 | Low temperature coefficient of resistivity cermet resistors |
| GB1706474A GB1459327A (en) | 1973-05-11 | 1974-04-18 | Resistor composition |
| IN890/CAL/74A IN142722B (enExample) | 1973-05-11 | 1974-04-18 | |
| DE2421861A DE2421861C2 (de) | 1973-05-11 | 1974-05-06 | Elektrischer Vanadium-Ruthenium-Widerstand |
| AR253700A AR202024A1 (es) | 1973-05-11 | 1974-05-10 | Composicion de resistor de cermet |
| CH644674A CH620544A5 (enExample) | 1973-05-11 | 1974-05-10 | |
| JP49052127A JPS6037601B2 (ja) | 1973-05-11 | 1974-05-10 | サ−メツト抵抗体組成 |
| FR7416228A FR2229122B1 (enExample) | 1973-05-11 | 1974-05-10 | |
| BR3843/74A BR7403843D0 (pt) | 1973-05-11 | 1974-05-10 | Composicao para resistor tipo "cermet" de baixo coeficiente de resistividade em funcao da temperatura e resistor tipo "cermet" |
| IT22551/74A IT1012245B (it) | 1973-05-11 | 1974-05-10 | Resistori metalloceramici a basso coefficiente di temperatura di resistivita |
| ES426228A ES426228A1 (es) | 1973-05-11 | 1974-05-11 | Procedimiento de obtencion de composiciones para resistorescerametalicos. |
| US05/565,870 US4006278A (en) | 1973-05-11 | 1975-04-07 | Low temperature coefficient of resistivity cermet resistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US359244A US3899449A (en) | 1973-05-11 | 1973-05-11 | Low temperature coefficient of resistivity cermet resistors |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US05/565,870 Division US4006278A (en) | 1973-05-11 | 1975-04-07 | Low temperature coefficient of resistivity cermet resistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3899449A true US3899449A (en) | 1975-08-12 |
Family
ID=23412973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US359244A Expired - Lifetime US3899449A (en) | 1973-05-11 | 1973-05-11 | Low temperature coefficient of resistivity cermet resistors |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3899449A (enExample) |
| JP (1) | JPS6037601B2 (enExample) |
| AR (1) | AR202024A1 (enExample) |
| BR (1) | BR7403843D0 (enExample) |
| CA (1) | CA1037705A (enExample) |
| CH (1) | CH620544A5 (enExample) |
| DE (1) | DE2421861C2 (enExample) |
| ES (1) | ES426228A1 (enExample) |
| FR (1) | FR2229122B1 (enExample) |
| GB (1) | GB1459327A (enExample) |
| IN (1) | IN142722B (enExample) |
| IT (1) | IT1012245B (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4292619A (en) * | 1978-01-12 | 1981-09-29 | U.S. Philips Corporation | Resistance material |
| US4362656A (en) * | 1981-07-24 | 1982-12-07 | E. I. Du Pont De Nemours And Company | Thick film resistor compositions |
| US5250958A (en) * | 1987-12-10 | 1993-10-05 | Matsushita Electric Industrial Co., Ltd. | Thermal head and manufacturing method thereof |
| US20040005472A1 (en) * | 2000-05-23 | 2004-01-08 | Saint-Gobain Glass France | Glazing coated with at least one layer having thermochromic properties |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112309606A (zh) * | 2019-07-31 | 2021-02-02 | 湖北中烟工业有限责任公司 | 一种复合型金属浆料组合物及其制备方法和用途 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3304199A (en) * | 1963-11-12 | 1967-02-14 | Cts Corp | Electrical resistance element |
| US3440182A (en) * | 1965-07-29 | 1969-04-22 | Du Pont | Copper/vanadium oxide compositions,noble metal metalizing compositions containing vanadium oxide additives,and electrical conductor elements made therewith |
| US3679607A (en) * | 1966-10-24 | 1972-07-25 | Int Nickel Co | Oxide resistor materials |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA944938A (en) * | 1970-01-16 | 1974-04-09 | Rajnikant B. Amin | Critical temperature resistors comprising a selected glass and vanadium dioxide or metal-doped vanadium dioxide |
-
1973
- 1973-05-11 US US359244A patent/US3899449A/en not_active Expired - Lifetime
-
1974
- 1974-04-09 CA CA197,202A patent/CA1037705A/en not_active Expired
- 1974-04-18 GB GB1706474A patent/GB1459327A/en not_active Expired
- 1974-04-18 IN IN890/CAL/74A patent/IN142722B/en unknown
- 1974-05-06 DE DE2421861A patent/DE2421861C2/de not_active Expired
- 1974-05-10 AR AR253700A patent/AR202024A1/es active
- 1974-05-10 FR FR7416228A patent/FR2229122B1/fr not_active Expired
- 1974-05-10 JP JP49052127A patent/JPS6037601B2/ja not_active Expired
- 1974-05-10 IT IT22551/74A patent/IT1012245B/it active
- 1974-05-10 BR BR3843/74A patent/BR7403843D0/pt unknown
- 1974-05-10 CH CH644674A patent/CH620544A5/de not_active IP Right Cessation
- 1974-05-11 ES ES426228A patent/ES426228A1/es not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3304199A (en) * | 1963-11-12 | 1967-02-14 | Cts Corp | Electrical resistance element |
| US3440182A (en) * | 1965-07-29 | 1969-04-22 | Du Pont | Copper/vanadium oxide compositions,noble metal metalizing compositions containing vanadium oxide additives,and electrical conductor elements made therewith |
| US3679607A (en) * | 1966-10-24 | 1972-07-25 | Int Nickel Co | Oxide resistor materials |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4292619A (en) * | 1978-01-12 | 1981-09-29 | U.S. Philips Corporation | Resistance material |
| US4362656A (en) * | 1981-07-24 | 1982-12-07 | E. I. Du Pont De Nemours And Company | Thick film resistor compositions |
| US5250958A (en) * | 1987-12-10 | 1993-10-05 | Matsushita Electric Industrial Co., Ltd. | Thermal head and manufacturing method thereof |
| US20040005472A1 (en) * | 2000-05-23 | 2004-01-08 | Saint-Gobain Glass France | Glazing coated with at least one layer having thermochromic properties |
| US6872453B2 (en) | 2000-05-23 | 2005-03-29 | Saint-Gobain Glass France | Glazing coated with at least one layer having thermochromic properties |
| US20050147825A1 (en) * | 2000-05-23 | 2005-07-07 | Saint-Gobain Glass France | Glazing coated with at least one layer having thermochromic properties |
| US7311976B2 (en) | 2000-05-23 | 2007-12-25 | Saint-Gobain Glass France | Glazing coated with at least one layer having thermochromic properties |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1012245B (it) | 1977-03-10 |
| CH620544A5 (enExample) | 1980-11-28 |
| BR7403843D0 (pt) | 1974-12-03 |
| IN142722B (enExample) | 1977-08-20 |
| FR2229122A1 (enExample) | 1974-12-06 |
| FR2229122B1 (enExample) | 1982-06-11 |
| GB1459327A (en) | 1976-12-22 |
| CA1037705A (en) | 1978-09-05 |
| JPS6037601B2 (ja) | 1985-08-27 |
| ES426228A1 (es) | 1976-07-01 |
| DE2421861C2 (de) | 1984-03-29 |
| AU6789074A (en) | 1975-10-16 |
| DE2421861A1 (de) | 1974-12-05 |
| JPS5016097A (enExample) | 1975-02-20 |
| AR202024A1 (es) | 1975-05-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3304199A (en) | Electrical resistance element | |
| US3052573A (en) | Resistor and resistor composition | |
| US3682840A (en) | Electrical resistor containing lead ruthenate | |
| US4039997A (en) | Resistance material and resistor made therefrom | |
| US4362656A (en) | Thick film resistor compositions | |
| EP0115798B1 (en) | Stain-resistant ruthenium oxide-based resistors | |
| US4814107A (en) | Nitrogen fireable resistor compositions | |
| JPH04305021A (ja) | 酸化スズを含むパイロクロール化合物の製造方法 | |
| US4536328A (en) | Electrical resistance compositions and methods of making the same | |
| US4060663A (en) | Electrical resistor glaze composition and resistor | |
| US3868334A (en) | Resistive glaze and paste compositions | |
| US4175061A (en) | Method of manufacturing resistor paste | |
| US8226857B2 (en) | Non-lead resistor composition | |
| US4439352A (en) | Resistor compositions and resistors produced therefrom | |
| US4574055A (en) | Resistor compositions | |
| US3899449A (en) | Low temperature coefficient of resistivity cermet resistors | |
| US3673117A (en) | Electrical resistant material | |
| CA1091918A (en) | Electrical resistor material, resistor made therefrom and method of making the same | |
| US4006278A (en) | Low temperature coefficient of resistivity cermet resistors | |
| US5474711A (en) | Thick film resistor compositions | |
| US3408311A (en) | Thermistor compositions and thermistors made therefrom | |
| US3865742A (en) | Resistor Compositions | |
| JPS6335081B2 (enExample) | ||
| JPH05234703A (ja) | 厚膜抵抗体を製造するための抵抗組成物 | |
| DE3876643T2 (de) | Elektronische dickschicht-materialien. |