US3895602A - Apparatus for effecting deposition by ion bombardment - Google Patents
Apparatus for effecting deposition by ion bombardment Download PDFInfo
- Publication number
- US3895602A US3895602A US442623A US44262374A US3895602A US 3895602 A US3895602 A US 3895602A US 442623 A US442623 A US 442623A US 44262374 A US44262374 A US 44262374A US 3895602 A US3895602 A US 3895602A
- Authority
- US
- United States
- Prior art keywords
- gun
- holder
- target
- substrate
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010849 ion bombardment Methods 0.000 title claims abstract description 13
- 238000000151 deposition Methods 0.000 title claims abstract description 12
- 230000008021 deposition Effects 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 4
- 239000012809 cooling fluid Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000012212 insulator Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 210000001331 nose Anatomy 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
Definitions
- An apparatus for effecting deposition by ion bombardment comprises -a multiple grid ion gun and a target References Cited with a hollow central portion.
- the substrate upon UNITED STATES PATENTS which the deposit is to be effected is carried by a sup- 2 345 080 3/1944 Ardenne 219 121 EB and can be successively and directly exposed to 214201722 /1947 Peterson et a1.
- the known kinds of apparatus for carrying out operations of this kind are of the triode cathode-sputtering kind.
- the assembly of target and substrate is located in a region of strong electric field.
- a suitable potential is applied to the sample.
- this potential is applied to the target.
- the surfaces of the insulator is positively charged by the arrival of positive ions, and the emission of secondary electrons, this giving rise to an ion concentration in the insulator-covered regions.
- the object of the present invention is a novel apparatus for deposition by ion bombardment, which makes it possible to successively carry out cleaning by ion bombardment and the deposition upon the substrate of the material of the target, which method is free of the said drawback.
- the ion bombardment apparatus in accordance with the invention comprises an evacuated enclosure and means for supplying inert gas therein; an ion-gun made up of an anode and multiple accelerator grids in order to accelerate the ions formed in the gun, a substrate holder and a target made of the material which is to be deposited, these latter being arranged in order to receive the accelerated ions, elements being provided in order to successively subject the substrate to the action of the accelerated ions, and to the stream of atoms stemming from the atomisation of said target by the ions.
- FIG. 1 illustrates in transverse section a first embodiment of the invention
- FIG. 2 schematically illustrates the substrate holder and its accessory parts
- FIG. 3 illustrates one of the grids of the device shown in FIG. 1;
- FIG. 4 in transverse section, illustrates a second embodiment of the invention.
- the device shown in FIG. 1 comprises a vacuumtight enclosure 1. This enclosure is evacuated through the pipe 2. It incorporates an ion gun 3 into which there opens a pipe 30 supplying the gas to be ionised, for example argon.
- This known kind of gun comprises a tungsten filament 31 which emits electrons.
- the filament is supported by the top part of the gun 3, namely the part 111, this top part being placed at a potenticl in the order of 1000 V and being insulated from the remainder of the enclosure by an insulator ring 112, a vacuum gauge 42 controls the residual pressure in the gun, which should be in the order of 10 mmHg.
- the gun moreover comprises an accelerating anode 32 placed at a slightly higher potential than the part 111 (around 1040 V); the tungsten filament 31, one terminal of which is connected to the enclosure 111, has its other terminal connected to a direct voltage source supplying a voltage in the order of 30V.
- the portion 111 of the enclosure carries a grid 33 containing some hundreds of holes, and is electrically connected to it as well.
- the grid 34 is placed at a negative potential of the order of 200 V, whilst the grid 35 is grounded.
- a solenoid surrounds the part 111 and creates a magnetic field directed along the axis of the gun. Accordingly, the electrons emitted by the filament have their trajectories elongated and make it possible to effect total ionisation of the argon.
- the grid 34 which is at a negative potential, prevents the electrons emanating from a filament 31 from penetrating into the enclosure 1, and accelerates the ions.
- the gun produces a uniform ion density in the order of 1m A/cm of low energy (less than or equal to lKeV).
- the object holder 39 carrying the substrate 40 which is to be covered.
- the substrate is arranged in order to be able to face the central part of the gun.
- the object holder is itself carried by a shaft 41 perpendicular to the ion gun axis, and can be rotated through by a crank and a gear system 42.
- the substrate can thus, as required, be subjected to or removed from, the effect of ion bombardment.
- This shaft passes through the enclosure by virtue of a vacuum-tight seal.
- the target 38 of material, which is to be atomised, is arranged on the gun axis beyond the substrate holder. It takes the form of a hollow conical frustum, the smaller base of which has the same diameter as the object holder 39.
- a retractable mask 51 makes it possible, before an operation, to adjust the gun whilst avoiding bombardment of the substrate.
- FIG. 2 illustrates the sample holder which comprises a heater element 45 making it possible to raise it to a suitable temperature (600 or 700 for example) in order to degas the substrate, and a pipe system 44 through which a cooling fluid can be circulated in order to bring this temperature to a suitable level during bombardment.
- This pipe arrangement comprises at its two ends noses 46 and 47 wound spiral fashion and capable of undergoing a rotation of 180 C.
- the vacuum is produced in the enclosure (pressure of 10' mm. Hg).
- the substrate, protected by the mask 51, is placed opposite the gun. The voltage is applied to the latter. Then, the argon pipe is opened, maintaining a pressure of 10 mm.l-lg.
- the plasma develops under the action of filament 31. After retraction of the mask, the substrate is bombarded by the A ions and is cleaned.
- the filament 400 in the electric field-free region, emits electrons which neutralise the positive charges on the ions and prevent the insulating zones of the surface of the substrate from becoming positively charged.
- the object holder After cleaning. the object holder is rotated through 180 and the substrate is then opposite the target which is then bombarded by that part of the ion beam not blocked off by the substrate. The atoms which it liberates thus become deposited upon the substrate.
- the current density is uni form to within over 50 mm (central part).
- Diameter of the object holder I 40 mm.
- the deposition rates obtained are 200 Angstroms/minute for molybdenum and 1000 Angstroms/minute for gold.
- the gun In order, during deposition, to prevent the back of the substrate from being bombarded by the central part of the beam, it is possible to modify the gun by splitting the grid 33 into two sections, the central section 331 and the peripheral 332, as shown in FIG. 3, the grid here being shown in plan.
- the part 332 is annular in form and the part 331 is of disc form.
- the internal part has a diameter of 40 mm
- the external ring has an internal diameter of 42 mm and an external diameter of 100 mm.
- the two sections 331 and 332 of the grid are raised to the potential 1000 V. This makes it possible to simultaneously clean the substrate and the internal surface of the target.
- the central part 332 of the grid is placed at a potential slightly higher than the anode 32, the peripheral section 332 remaining at the potential 1000 V which prevents the extraction of ions from the central part of the gun and therefore prevents bombardment of the rear portion of the object holder.
- FIG. 4 illustrates a second example of the invention.
- similar references designate similar elements to those so marked in FIG. 1.
- Only the output grid of the gun 3 has been shown. It contains holes only at its peripheral region. The gun 3 can therefore only bombard the target 38.
- the latter is hollow.
- This has the same diameter as the substrate, the object holder is fixed, the substrate is opposite the gun 300, and the assembly of gun 300 object holder 39 and target 38 is carried by a set of pillars 301 providing the electrical connections for the heater element of the object holder and the means of supplying it with cooling fluid.
- a retractable mask- 302 is arranged between the substrate and the gun 300. For example, this mask is rotatable about a vertical axis, and in one of its position, it is positioned for receiving the totality of the beam incoming from the gun 300.
- the gun 300 is supplied with a voltage, gun 3 is stopped the mask 302 is retracted.
- the ions coming from the gun 300 pass through the target 38 and clean the substrate;
- the gun 300 is stopped and the mask 302 protects the substrate against the impurities detached during cleaning of the target 38.
- the gun 3 has a voltage applied to it;
- the target 302 is retracted and the substrate is exposed to bombardment by the atoms coming from the target.
- An apparatus for effecting deposition by ion bombardment comprising an evacuated enclosure and in said enclosure: an ion source comprising at least one ion gun producing a uniform beam, a target mounted below said source and made of the material which is to be atomised, an object-holder aligned with and disposed between said source and said target so that ions passing said object-holder impinge on said target and supporting a substrate having a surface to be bombarded means for moving said holder between a first position exposing said surface to be bombarded to said beam and a second position exposing said substrate to the stream of atoms emanating from the target and means for blocking a portion of said beam whereby said beam does not impinge on said object-holder when said object-holder is in said second position.
- an ion source comprising at least one ion gun producing a uniform beam
- a target mounted below said source and made of the material which is to be atomised
- an object-holder aligned with and disposed between said source and said target so that ions
- said means for moving comprises a shaft perpendicular to the gun axis, said object holder being mounted upon said shaft, and a mechanical system enabling said shaft to be rotated through 4'.
- said object-holder has a heating system to raise it to a predetermined temperature and piping arrangements passing a cooling fluid at a suitable temperature.
- said gun comprises grids containing mutually opposite holes, each grid possessing an annular and a peripheral portion, the grid closest to the accelerating anode having connections placing the central part at a higher potential than the peripheral part in order to effect said blocking of a portion of said beam.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7305937A FR2218652B1 (de) | 1973-02-20 | 1973-02-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3895602A true US3895602A (en) | 1975-07-22 |
Family
ID=9115106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US442623A Expired - Lifetime US3895602A (en) | 1973-02-20 | 1974-02-14 | Apparatus for effecting deposition by ion bombardment |
Country Status (4)
Country | Link |
---|---|
US (1) | US3895602A (de) |
JP (1) | JPS49114583A (de) |
DE (1) | DE2407924A1 (de) |
FR (1) | FR2218652B1 (de) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4100055A (en) * | 1977-06-10 | 1978-07-11 | Varian Associates, Inc. | Target profile for sputtering apparatus |
US4142958A (en) * | 1978-04-13 | 1979-03-06 | Litton Systems, Inc. | Method for fabricating multi-layer optical films |
US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
US4179530A (en) * | 1977-05-20 | 1979-12-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the deposition of pure semiconductor material |
US4197175A (en) * | 1977-06-01 | 1980-04-08 | Balzers Aktiengesellschaft | Method and apparatus for evaporating materials in a vacuum coating plant |
US4690744A (en) * | 1983-07-20 | 1987-09-01 | Konishiroku Photo Industry Co., Ltd. | Method of ion beam generation and an apparatus based on such method |
USRE32849E (en) * | 1978-04-13 | 1989-01-31 | Litton Systems, Inc. | Method for fabricating multi-layer optical films |
US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
US4952294A (en) * | 1988-03-15 | 1990-08-28 | Collins George J | Apparatus and method for in-situ generation of dangerous polyatomic gases, including polyatomic radicals |
US5059292A (en) * | 1989-02-28 | 1991-10-22 | Collins George J | Single-chamber apparatus for in-situ generation of dangerous polyatomic gases and radicals from a source material contained within a porous foamed structure |
EP0549246A2 (de) * | 1991-12-27 | 1993-06-30 | Johnson Matthey Public Limited Company | Anordnung mehrschichtiger Filmmaterialien |
US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
US5459296A (en) * | 1990-12-15 | 1995-10-17 | Sidmar N.V. | Method for the low-maintenance operation of an apparatus for producing a surface structure, and apparatus |
US5601654A (en) * | 1996-05-31 | 1997-02-11 | The Regents Of The University Of California, Office Of Technology Transfer | Flow-through ion beam source |
US6051115A (en) * | 1996-07-16 | 2000-04-18 | Korea Institute Of Science And Technology | Adhesive strength increasing method for metal thin film |
WO2000023633A1 (en) * | 1998-10-20 | 2000-04-27 | Cvc Products, Inc. | Shutter for thin-film processing equipment |
US20060099341A1 (en) * | 2003-04-11 | 2006-05-11 | Rudolf Beckmann | High frequency plasma jet source and method for irradiating a surface |
US20070163503A1 (en) * | 2006-01-17 | 2007-07-19 | Mitsubishi Heavy Industries, Ltd. | Thin film preparation apparatus |
CN103474318A (zh) * | 2013-10-10 | 2013-12-25 | 大连交通大学 | 溅射离子枪 |
US20140027274A1 (en) * | 2012-07-27 | 2014-01-30 | Varian Semiconductor Equipment Associates, Inc. | Three Dimensional Metal Deposition Technique |
CN111886360A (zh) * | 2017-12-22 | 2020-11-03 | 地质研究院及核科学有限公司 | 离子束溅射设备和方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4259145A (en) * | 1979-06-29 | 1981-03-31 | International Business Machines Corporation | Ion source for reactive ion etching |
DE3834318A1 (de) * | 1988-10-08 | 1990-04-12 | Leybold Ag | Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
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US2345080A (en) * | 1940-02-19 | 1944-03-28 | Ardenne Manfred Von | Arrangement for producing filters |
US2420722A (en) * | 1942-12-11 | 1947-05-20 | Bausch & Lomb | Apparatus for coating surfaces |
US2463180A (en) * | 1943-04-29 | 1949-03-01 | Bell Telephone Labor Inc | Method and apparatus for making mosaic targets for electron beams |
US2771568A (en) * | 1951-01-31 | 1956-11-20 | Zeiss Carl | Utilizing electron energy for physically and chemically changing members |
US2961559A (en) * | 1959-08-28 | 1960-11-22 | Jr John Marshall | Methods and means for obtaining hydromagnetically accelerated plasma jet |
US3005931A (en) * | 1960-03-29 | 1961-10-24 | Raphael A Dandl | Ion gun |
US3087838A (en) * | 1955-10-05 | 1963-04-30 | Hupp Corp | Methods of photoelectric cell manufacture |
US3143680A (en) * | 1958-11-25 | 1964-08-04 | Commissariat Energie Atomique | Ion accelerators |
US3205087A (en) * | 1961-12-15 | 1965-09-07 | Martin Marietta Corp | Selective vacuum deposition of thin film |
US3238413A (en) * | 1962-05-31 | 1966-03-01 | Thom Karlheinz | Magnetically controlled plasma accelerator |
US3310424A (en) * | 1963-05-14 | 1967-03-21 | Litton Systems Inc | Method for providing an insulating film on a substrate |
US3326178A (en) * | 1963-09-12 | 1967-06-20 | Angelis Henry M De | Vapor deposition means to produce a radioactive source |
US3347701A (en) * | 1963-02-05 | 1967-10-17 | Fujitsu Ltd | Method and apparatus for vapor deposition employing an electron beam |
US3516855A (en) * | 1967-05-29 | 1970-06-23 | Ibm | Method of depositing conductive ions by utilizing electron beam |
US3528387A (en) * | 1964-03-17 | 1970-09-15 | Singer General Precision | Ion cleaning and vapor deposition |
US3563809A (en) * | 1968-08-05 | 1971-02-16 | Hughes Aircraft Co | Method of making semiconductor devices with ion beams |
US3719893A (en) * | 1971-12-23 | 1973-03-06 | Us Navy | System and method for accelerating charged particles utilizing pulsed hollow beam electrons |
Family Cites Families (3)
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---|---|---|---|---|
FR1459893A (fr) * | 1964-08-22 | 1966-06-17 | Balzers Hochvakuum | Procédé de production des couches minces par dépôt à l'aide de pulvérisation |
DE1515318A1 (de) * | 1964-12-28 | 1969-07-31 | Hermsdorf Keramik Veb | Einrichtung zur Herstellung duenner Schichten auf einem Traeger mittels Ionenstrahl-Zerstaeubung |
FR1483391A (fr) * | 1966-06-15 | 1967-06-02 | Ion Physics Corp | Procédé et appareil pour former des dépôts sous vide poussé |
-
1973
- 1973-02-20 FR FR7305937A patent/FR2218652B1/fr not_active Expired
-
1974
- 1974-02-14 US US442623A patent/US3895602A/en not_active Expired - Lifetime
- 1974-02-16 JP JP49018161A patent/JPS49114583A/ja active Pending
- 1974-02-19 DE DE19742407924 patent/DE2407924A1/de active Pending
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
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US2345080A (en) * | 1940-02-19 | 1944-03-28 | Ardenne Manfred Von | Arrangement for producing filters |
US2420722A (en) * | 1942-12-11 | 1947-05-20 | Bausch & Lomb | Apparatus for coating surfaces |
US2463180A (en) * | 1943-04-29 | 1949-03-01 | Bell Telephone Labor Inc | Method and apparatus for making mosaic targets for electron beams |
US2771568A (en) * | 1951-01-31 | 1956-11-20 | Zeiss Carl | Utilizing electron energy for physically and chemically changing members |
US3087838A (en) * | 1955-10-05 | 1963-04-30 | Hupp Corp | Methods of photoelectric cell manufacture |
US3143680A (en) * | 1958-11-25 | 1964-08-04 | Commissariat Energie Atomique | Ion accelerators |
US2961559A (en) * | 1959-08-28 | 1960-11-22 | Jr John Marshall | Methods and means for obtaining hydromagnetically accelerated plasma jet |
US3005931A (en) * | 1960-03-29 | 1961-10-24 | Raphael A Dandl | Ion gun |
US3205087A (en) * | 1961-12-15 | 1965-09-07 | Martin Marietta Corp | Selective vacuum deposition of thin film |
US3238413A (en) * | 1962-05-31 | 1966-03-01 | Thom Karlheinz | Magnetically controlled plasma accelerator |
US3347701A (en) * | 1963-02-05 | 1967-10-17 | Fujitsu Ltd | Method and apparatus for vapor deposition employing an electron beam |
US3310424A (en) * | 1963-05-14 | 1967-03-21 | Litton Systems Inc | Method for providing an insulating film on a substrate |
US3326178A (en) * | 1963-09-12 | 1967-06-20 | Angelis Henry M De | Vapor deposition means to produce a radioactive source |
US3528387A (en) * | 1964-03-17 | 1970-09-15 | Singer General Precision | Ion cleaning and vapor deposition |
US3516855A (en) * | 1967-05-29 | 1970-06-23 | Ibm | Method of depositing conductive ions by utilizing electron beam |
US3563809A (en) * | 1968-08-05 | 1971-02-16 | Hughes Aircraft Co | Method of making semiconductor devices with ion beams |
US3719893A (en) * | 1971-12-23 | 1973-03-06 | Us Navy | System and method for accelerating charged particles utilizing pulsed hollow beam electrons |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
US4179530A (en) * | 1977-05-20 | 1979-12-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the deposition of pure semiconductor material |
US4197175A (en) * | 1977-06-01 | 1980-04-08 | Balzers Aktiengesellschaft | Method and apparatus for evaporating materials in a vacuum coating plant |
US4100055A (en) * | 1977-06-10 | 1978-07-11 | Varian Associates, Inc. | Target profile for sputtering apparatus |
USRE32849E (en) * | 1978-04-13 | 1989-01-31 | Litton Systems, Inc. | Method for fabricating multi-layer optical films |
US4142958A (en) * | 1978-04-13 | 1979-03-06 | Litton Systems, Inc. | Method for fabricating multi-layer optical films |
US4690744A (en) * | 1983-07-20 | 1987-09-01 | Konishiroku Photo Industry Co., Ltd. | Method of ion beam generation and an apparatus based on such method |
US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
US4952294A (en) * | 1988-03-15 | 1990-08-28 | Collins George J | Apparatus and method for in-situ generation of dangerous polyatomic gases, including polyatomic radicals |
US5059292A (en) * | 1989-02-28 | 1991-10-22 | Collins George J | Single-chamber apparatus for in-situ generation of dangerous polyatomic gases and radicals from a source material contained within a porous foamed structure |
US5459296A (en) * | 1990-12-15 | 1995-10-17 | Sidmar N.V. | Method for the low-maintenance operation of an apparatus for producing a surface structure, and apparatus |
EP0549246B1 (de) * | 1991-12-27 | 2003-10-15 | Honeywell International Inc. | Anordnung mehrschichtiger Filmmaterialien |
EP0549246A2 (de) * | 1991-12-27 | 1993-06-30 | Johnson Matthey Public Limited Company | Anordnung mehrschichtiger Filmmaterialien |
US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
US5601654A (en) * | 1996-05-31 | 1997-02-11 | The Regents Of The University Of California, Office Of Technology Transfer | Flow-through ion beam source |
US6051115A (en) * | 1996-07-16 | 2000-04-18 | Korea Institute Of Science And Technology | Adhesive strength increasing method for metal thin film |
US6132805A (en) * | 1998-10-20 | 2000-10-17 | Cvc Products, Inc. | Shutter for thin-film processing equipment |
WO2000023633A1 (en) * | 1998-10-20 | 2000-04-27 | Cvc Products, Inc. | Shutter for thin-film processing equipment |
US20060099341A1 (en) * | 2003-04-11 | 2006-05-11 | Rudolf Beckmann | High frequency plasma jet source and method for irradiating a surface |
US20070163503A1 (en) * | 2006-01-17 | 2007-07-19 | Mitsubishi Heavy Industries, Ltd. | Thin film preparation apparatus |
CN104508174A (zh) * | 2012-07-27 | 2015-04-08 | 瓦里安半导体设备公司 | 三维金属沉积技术 |
US20140027274A1 (en) * | 2012-07-27 | 2014-01-30 | Varian Semiconductor Equipment Associates, Inc. | Three Dimensional Metal Deposition Technique |
KR20150038269A (ko) * | 2012-07-27 | 2015-04-08 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 3차원 금속 증착 기술 |
US9136096B2 (en) * | 2012-07-27 | 2015-09-15 | Varian Semiconductor Equipment Associates, Inc. | Three dimensional metal deposition technique |
TWI551707B (zh) * | 2012-07-27 | 2016-10-01 | 瓦里安半導體設備公司 | 濺鍍系統與電漿處理設備 |
CN104508174B (zh) * | 2012-07-27 | 2017-03-22 | 瓦里安半导体设备公司 | 等离子体处理设备与溅镀系统 |
CN103474318A (zh) * | 2013-10-10 | 2013-12-25 | 大连交通大学 | 溅射离子枪 |
CN111886360A (zh) * | 2017-12-22 | 2020-11-03 | 地质研究院及核科学有限公司 | 离子束溅射设备和方法 |
US20210104380A1 (en) * | 2017-12-22 | 2021-04-08 | Institute Of Geological And Nuclear Sciences Limited | Ion beam sputtering apparatus and method |
EP3728685A4 (de) * | 2017-12-22 | 2021-10-13 | Institute Of Geological And Nuclear Sciences Limited | Vorrichtung und verfahren zum ionenstrahlsputtern |
CN111886360B (zh) * | 2017-12-22 | 2022-08-26 | 地质研究院及核科学有限公司 | 离子束溅射设备和方法 |
Also Published As
Publication number | Publication date |
---|---|
FR2218652A1 (de) | 1974-09-13 |
JPS49114583A (de) | 1974-11-01 |
DE2407924A1 (de) | 1974-08-22 |
FR2218652B1 (de) | 1976-09-10 |
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