US3886896A - Device for plasma depositing of thin layers onto substrates - Google Patents

Device for plasma depositing of thin layers onto substrates Download PDF

Info

Publication number
US3886896A
US3886896A US486933A US48693374A US3886896A US 3886896 A US3886896 A US 3886896A US 486933 A US486933 A US 486933A US 48693374 A US48693374 A US 48693374A US 3886896 A US3886896 A US 3886896A
Authority
US
United States
Prior art keywords
hollow body
chamber
cylindrical
vicinity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US486933A
Other languages
English (en)
Inventor
Cakenberghe Jean Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel CIT SA
Original Assignee
Tellecommunications Cit Alcate
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tellecommunications Cit Alcate filed Critical Tellecommunications Cit Alcate
Application granted granted Critical
Publication of US3886896A publication Critical patent/US3886896A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates

Definitions

  • a device enabling the obtaining of high depositing speed for chemical compounds and consuming relatively low energy comprises essentially, inside a vacuum chamber, a hollow body lined on the inside with the substance to be deposited. That hollow body is fed from its bottom part by a gas pipe keeping the hollow body at a predetermined pressure. At its upper part, the hollow body is drilled with an outlet opening arranged facing the substrate to be coated. An electromagnetic field is induced inside the hollow body by means of an induction coil placed on the outside of the vacuum chamber surroungind quite closely the said cavity.
  • the coil is connected to a highfrequency voltage source, a plasma leading to the forming of an arc causing, in its turn, a great rise in temperature inside the cavity leading to a progressive volatilization of the inner wall of thathollow body, is formed inside the hollow body, in contact with the gas injected into that hollow body.
  • the distilled material escapes through the outlet opening placed facing the substrate and is deposited on the latter.
  • Such a device may be usedfor the depositing of chemical compounds and for the depositing of simple substances.
  • the gas used is a neutral gas.
  • the walls of the hollow body constitute a heat shield.
  • the aim of the invention is therefore to give the device described hereinabove a more industrial character, making it possible to proceed with deposits with a very high intensity of plasma while maintaining a greater output than that of known devices.
  • the object of the invention is therefore a device making it possible to deposit this layers under vacuum onto a substrate, comprising:
  • a cylindrical hollow body arranged axially in the cylindrical part of the chamber, lined on its inside with the substance to be deposited and connected to a source of gas arriving in the hollow body at a predetermined pressure;
  • an induction coil placed on the outside of the-chamber, arranged round the cylindrical part of the chamber, in the vicinity of the latter, at the height of the hollow body and connected to a highfrequency voltage source;
  • cooling means characterized in that the main means for concentrating the electromagnetic field inside the hollow body is formed by two concentric conductive cylinders electrically connected together, constituting the secondary winding of an impedance transformer whose primary winding is formed by the induction coil.
  • the secondary winding of the impedance transformer comprises two coaxial conductive cylinders having a height substantially equal to that of the hollow body, the outer cylinder being situated in the immediate vieinity of the wall of the chamber inside the latter; the two cylinders are split along a radial plane determining two lips on each of the two cylinders. The homologous lips are connected together by two portions of conductive radial planes.
  • the result of this is an increase in the density of the electromagnetic energy inside the hollow body.
  • a great proportion of theelectromagnetic energy contained in the volume limited by the induction coil is therefore concentrated inside the hollow body.
  • FIG. I is a longitudinal cutaway view of an embodiment of the device according to the invention.
  • FIG. 2 is a transversal cutaway view of the same embodiment
  • FIG. 3 is a diagrammatic cutaway view of another embodiment.
  • the vacuum chamber I3 comprises a cylindrical part 1 extended at its upper part by a part 2 flared upwards and by a cylinder 3 having a greater diameter than the cylindrical part I; that cylinder 3 is connected to the plate 4 of a vacuum chamber by means of a seal 5.
  • the substrate or substrates and the substrate supports are placed in that vacuum chamber (not shown).
  • the cylindrical hollow body 6 lined on the inside with the material 7 to be deposited on substrate is arranged in a known manner in the axis of the cylindrical part 1 of the vacuum chamber 13.
  • the upper part of the hollow body 6 comprises an opening 8 arranged facing the substrate.
  • the hollow body 6 is connected to a pipe 9 which crosses through a removable stopper 10 by means of the O ring 11.
  • the pipe 9 itself is connected to the gas source supplying the required gas at a predetermined pressure (for example, from a few hundredths to a few tenths of a torr).
  • an induction coil 12 connected to a high frequency voltage source (not shown).
  • a cylinder 14 made of a material which is a good conductor (copper for example) is arranged according to the present invention.
  • a second concentric cylinder 15, arranged in the immediate vicinity of the hollow body 6 is cooled by a fiow of water 16.
  • FIG. 2 makes it easier to understand the electrical connection set up between the cylinders 14 and 15.
  • That figure shows diagrammatically at 20 the highfrequency voltage generator not shown in FIG. 1 which feeds the induction coil 12 and is placed on the outside of the cylindrical wall 1 of the vacuum chamber.
  • the conductive cylinder 14 split along a radial half-plane 17, shown by discontinuous lines.
  • that cylinder has two lips 18 and 19.
  • the cylinder 15 is split along the same radial halfplane 17 making two lips 21 and 22 appear; the homologous lips 18 and 21 on the one hand and 19 and 22 on the other hand are connected together by two portions of radial conductive planes 23 and 24.
  • the induction coil sets up a field inducing, on the cylinder 14, currents going in a clockwise direction
  • the cylinder 15 has currents in an anti-clockwise direction flowing through it.
  • a very great proportion of the electromagnetic energy appearing in the volume comprised inside the induction coil is concentrated inside the cylindrical hollow body.
  • the two cylinders 14 and 15 therefore actually fulfill the function of electromagnetic energy concentrators.
  • the system for concentrating electromagnetic energy may, moreover, be completed as follows:
  • a cylinder 26 (FIG. 1) arranged below the cavity sets up, by induction, a field which tends to push the electromagnetic field back towards the cavity.
  • a cylinder 27 (FIG. 1) fulfills the same functions above the hollow body.
  • the electromagnetic field is confined in the volume of the cylindrical hollow body by means of the combined action of the cylinders 14 and 15 and of the cylinders 26 and 27.
  • the cylinders 14 and 15 constitute the secondary winding of a transformer whose induction coil 12 forms the primary winding and act as an impedance transformer adapted to the cavity.
  • the solid angle at which the material may be deposited onto the substrate from the outlet opening 8 of the cylindrical hollow body is no longer limited by the wall of the chamber and may therefore be increased. It is then possible to coat a substrate having a greater surface and to obtain at the same time a more homogenous coating.
  • FIG. 3 shows diagrammatically an industrial device according to the invention.
  • An induction coil 32 fed by a high-frequency voltage source 33 is arranged around a cylindrical chamber 31 having a large diameter.
  • a split cylinder 34 made of a conductive metal analogous to the preceding cylinder 14 may rotate on itself within the chamber about a central axis 35.
  • the cylindrical hollow body 36 made of a material to be sprayed is surrounded by a split cylinder 37.
  • the homologous lips of the slots of two cylinders 34 and 37 are connected together by portions of plane conductors 38 and 39.
  • the cylinder 37 is cooled by a water pipe 40, shown in discontinuous lines, fed from an axial column 41.
  • the assembly constituted by the hollow body 36, the inner cylinder 37, the water pipe 40, may rotate about the axis 35 at the same time as the cylinder 34.
  • the opening of the cylindrical hollow body 36 is placed successively facing the substrates 42, 43, 44, spaced regularly in a circle and lastly facing an elongated substrate 45 before which the opening of the hollow body 36 passes slowly at a constant speed, thus providing a very homogenous coating on the whole of the substrate 45.
  • Device for vapor depositing a thin layer under vacuum onto a substrate comprising:
  • a cylindrical hollow body arranged axially in the cylindrical part of the chamber, lined on its inside with the substance to be deposited, connected to a source of gas arriving in the hollow body at a predetermined pressure and in alignment with said at least one substrate;
  • an induction coil placed on the outside of the chamber, arranged round the cylindrical part of the chamber, in. the, vicinity of the latter, at the height of the hollow body and connected to a highfrequency voltage source whereby to generate a plasma to evaporate said substance;
  • one of the concentric conductive cylinders (14) being arranged in the immediate vicinity of the wallet the cylindrical hollow body (6) and the second conductive cylinder (15) being placed in the vicinity of the wall 1 of the vacuum chamber (13).
  • the electromagnetic field concentration means additionally comprises a conductive cylinder (26) arranged in vicinity of the wall (1) of the chamber (13), inside the latter, below the hollow body (6).
  • the concentration means additionally comprises a conductive cyl inder (27) arranged in the vicinity of the wall (I of the chamber (13) above the hollow body (6).

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
US486933A 1973-07-13 1974-07-09 Device for plasma depositing of thin layers onto substrates Expired - Lifetime US3886896A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7325855A FR2236963B1 (enrdf_load_stackoverflow) 1973-07-13 1973-07-13

Publications (1)

Publication Number Publication Date
US3886896A true US3886896A (en) 1975-06-03

Family

ID=9122584

Family Applications (1)

Application Number Title Priority Date Filing Date
US486933A Expired - Lifetime US3886896A (en) 1973-07-13 1974-07-09 Device for plasma depositing of thin layers onto substrates

Country Status (9)

Country Link
US (1) US3886896A (enrdf_load_stackoverflow)
JP (1) JPS5039288A (enrdf_load_stackoverflow)
BE (1) BE816798A (enrdf_load_stackoverflow)
CH (1) CH584294A5 (enrdf_load_stackoverflow)
DE (1) DE2433382C2 (enrdf_load_stackoverflow)
FR (1) FR2236963B1 (enrdf_load_stackoverflow)
GB (1) GB1442515A (enrdf_load_stackoverflow)
IT (1) IT1016580B (enrdf_load_stackoverflow)
NL (1) NL7409415A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049940A (en) * 1974-10-31 1977-09-20 Agence Nationale De Valorisation De La Recherche (Anvar) Devices and methods of using HF waves to energize a column of gas enclosed in an insulating casing
US4320716A (en) * 1979-05-18 1982-03-23 Thomson-Csf Ultra-high frequency device for depositing thin films on solids
US4361114A (en) * 1980-10-06 1982-11-30 Optical Coating Laboratory, Inc. Method and apparatus for forming thin film oxide layers using reactive evaporation techniques
US4466380A (en) * 1983-01-10 1984-08-21 Xerox Corporation Plasma deposition apparatus for photoconductive drums
US4605614A (en) * 1981-10-14 1986-08-12 Nitto Boseki Co., Ltd. Method for measuring plasmin
US5216330A (en) * 1992-01-14 1993-06-01 Honeywell Inc. Ion beam gun
US5630880A (en) * 1996-03-07 1997-05-20 Eastlund; Bernard J. Method and apparatus for a large volume plasma processor that can utilize any feedstock material
US5690050A (en) * 1995-05-10 1997-11-25 Anelva Corporation Plasma treating apparatus and plasma treating method
US5938883A (en) * 1993-01-12 1999-08-17 Tokyo Electron Limited Plasma processing apparatus
US6136140A (en) * 1993-01-12 2000-10-24 Tokyo Electron Limited Plasma processing apparatus
US20030049003A1 (en) * 2001-04-12 2003-03-13 Ahmad Rokan U. High index-contrast fiber waveguides and applications
US20040137168A1 (en) * 2002-11-22 2004-07-15 Vladimir Fuflyigin Dielectric waveguide and method of making the same
US20060254517A1 (en) * 2005-05-04 2006-11-16 Orlaw Massler Plasma booster for plasma treatment installation
US20070163503A1 (en) * 2006-01-17 2007-07-19 Mitsubishi Heavy Industries, Ltd. Thin film preparation apparatus
USRE40963E1 (en) * 1993-01-12 2009-11-10 Tokyo Electron Limited Method for plasma processing by shaping an induced electric field

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211548A (en) * 1961-11-23 1965-10-12 Ciba Ltd Process for the production of tantalum or niobium in a hydrogen plasma jet
US3264508A (en) * 1962-06-27 1966-08-02 Lai William Plasma torch
US3472679A (en) * 1965-08-25 1969-10-14 Xerox Corp Coating surfaces
US3736175A (en) * 1972-06-02 1973-05-29 Du Pont Vacuum coating method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211548A (en) * 1961-11-23 1965-10-12 Ciba Ltd Process for the production of tantalum or niobium in a hydrogen plasma jet
US3264508A (en) * 1962-06-27 1966-08-02 Lai William Plasma torch
US3472679A (en) * 1965-08-25 1969-10-14 Xerox Corp Coating surfaces
US3736175A (en) * 1972-06-02 1973-05-29 Du Pont Vacuum coating method

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049940A (en) * 1974-10-31 1977-09-20 Agence Nationale De Valorisation De La Recherche (Anvar) Devices and methods of using HF waves to energize a column of gas enclosed in an insulating casing
US4320716A (en) * 1979-05-18 1982-03-23 Thomson-Csf Ultra-high frequency device for depositing thin films on solids
US4361114A (en) * 1980-10-06 1982-11-30 Optical Coating Laboratory, Inc. Method and apparatus for forming thin film oxide layers using reactive evaporation techniques
US4605614A (en) * 1981-10-14 1986-08-12 Nitto Boseki Co., Ltd. Method for measuring plasmin
US4466380A (en) * 1983-01-10 1984-08-21 Xerox Corporation Plasma deposition apparatus for photoconductive drums
US5216330A (en) * 1992-01-14 1993-06-01 Honeywell Inc. Ion beam gun
US6136139A (en) * 1993-01-12 2000-10-24 Tokyo Electron Limited Plasma processing apparatus
US5938883A (en) * 1993-01-12 1999-08-17 Tokyo Electron Limited Plasma processing apparatus
US6136140A (en) * 1993-01-12 2000-10-24 Tokyo Electron Limited Plasma processing apparatus
US6265031B1 (en) 1993-01-12 2001-07-24 Tokyo Electron Limited Method for plasma processing by shaping an induced electric field
USRE40963E1 (en) * 1993-01-12 2009-11-10 Tokyo Electron Limited Method for plasma processing by shaping an induced electric field
US5690050A (en) * 1995-05-10 1997-11-25 Anelva Corporation Plasma treating apparatus and plasma treating method
US5630880A (en) * 1996-03-07 1997-05-20 Eastlund; Bernard J. Method and apparatus for a large volume plasma processor that can utilize any feedstock material
US7190875B2 (en) 2001-04-12 2007-03-13 Omniguide, Inc. Fiber waveguide formed from chalcogenide glass and polymer
US7142756B2 (en) 2001-04-12 2006-11-28 Omniguide, Inc. High index-contrast fiber waveguides and applications
US6788864B2 (en) 2001-04-12 2004-09-07 Omniguide Communications High index-contrast fiber waveguides and applications
US6801698B2 (en) 2001-04-12 2004-10-05 Omniguide Communications High index-contrast fiber waveguides and applications
US6898359B2 (en) 2001-04-12 2005-05-24 Omniguide Communications High index-contrast fiber waveguides and applications
US20050259944A1 (en) * 2001-04-12 2005-11-24 Emilia Anderson High index-contrast fiber waveguides and applications
US20030049003A1 (en) * 2001-04-12 2003-03-13 Ahmad Rokan U. High index-contrast fiber waveguides and applications
US20040141702A1 (en) * 2002-11-22 2004-07-22 Vladimir Fuflyigin Dielectric waveguide and method of making the same
US20040137168A1 (en) * 2002-11-22 2004-07-15 Vladimir Fuflyigin Dielectric waveguide and method of making the same
US20080141724A1 (en) * 2002-11-22 2008-06-19 Omniguide, Inc. Dielectric waveguide and method of making the same
US7854149B2 (en) 2002-11-22 2010-12-21 Omniguide, Inc. Dielectric waveguide and method of making the same
US20060254517A1 (en) * 2005-05-04 2006-11-16 Orlaw Massler Plasma booster for plasma treatment installation
US7798097B2 (en) * 2005-05-04 2010-09-21 Oerlikon Trading Ag, Trubbach Plasma booster for plasma treatment installation
KR101258308B1 (ko) * 2005-05-04 2013-04-25 오를리콘 트레이딩 아크티엔게젤샤프트, 트뤼프바흐 플라즈마 처리 장치용 플라즈마 증폭기
CN101233598B (zh) * 2005-05-04 2013-05-01 奥尔利康贸易股份公司（特吕巴赫） 用于等离子体处理设备的等离子体增强器
US20070163503A1 (en) * 2006-01-17 2007-07-19 Mitsubishi Heavy Industries, Ltd. Thin film preparation apparatus

Also Published As

Publication number Publication date
CH584294A5 (enrdf_load_stackoverflow) 1977-01-31
DE2433382C2 (de) 1982-08-19
DE2433382A1 (de) 1975-01-30
IT1016580B (it) 1977-06-20
FR2236963A1 (enrdf_load_stackoverflow) 1975-02-07
JPS5039288A (enrdf_load_stackoverflow) 1975-04-11
FR2236963B1 (enrdf_load_stackoverflow) 1977-02-18
NL7409415A (nl) 1975-01-15
BE816798A (fr) 1974-12-27
GB1442515A (en) 1976-07-14

Similar Documents

Publication Publication Date Title
US3886896A (en) Device for plasma depositing of thin layers onto substrates
US3922214A (en) Device for manufacturing thin layers of mineral substances
US5656141A (en) Apparatus for coating substrates
US4569746A (en) Magnetron sputter device using the same pole piece for coupling separate confining magnetic fields to separate targets subject to separate discharges
US4478703A (en) Sputtering system
US5311103A (en) Apparatus for the coating of material on a substrate using a microwave or UHF plasma
US4374722A (en) Cathodic sputtering target including means for detecting target piercing
US5234529A (en) Plasma generating apparatus employing capacitive shielding and process for using such apparatus
US3540993A (en) Sputtering apparatus
US4939424A (en) Apparatus for producing a plasma and for the treatment of substrates
CN101517691B (zh) 电子回旋共振等离子体源
US3619402A (en) Process and device for depositing on surfaces
US4606806A (en) Magnetron sputter device having planar and curved targets
US4252626A (en) Cathode sputtering with multiple targets
KR970030287A (ko) 플라즈마 증착 시스템을 위한 슬롯식 rf 코일 차폐부
JP2004507617A (ja) 金属被膜を連続冷プラズマ蒸着するための方法および装置
RU2536126C2 (ru) Вакуумнодуговой испаритель для генерирования катодной плазмы
JP2002512656A (ja) スパッタリング装置
EP0720206B1 (en) Plasma processing method and plasma processing apparatus
EP0163445B1 (en) Magnetron sputter device having planar and concave targets
US5690796A (en) Method and apparatus for layer depositions
US3627663A (en) Method and apparatus for coating a substrate by utilizing the hollow cathode effect with rf sputtering
US5053244A (en) Process for depositing silicon oxide on a substrate
JPH09170072A (ja) 蒸発させようとする材料を収容するための、真空室に配置された坩堝を備えた真空被覆装置
US3906892A (en) Plasma deposition of thin layers of substrated or the like