US3877981A - Method of electroless plating - Google Patents
Method of electroless plating Download PDFInfo
- Publication number
- US3877981A US3877981A US355720A US35572073A US3877981A US 3877981 A US3877981 A US 3877981A US 355720 A US355720 A US 355720A US 35572073 A US35572073 A US 35572073A US 3877981 A US3877981 A US 3877981A
- Authority
- US
- United States
- Prior art keywords
- palladium
- nickel
- metal
- rinsing
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 15
- 238000007772 electroless plating Methods 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000000080 wetting agent Substances 0.000 claims abstract description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 47
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 40
- 229910052763 palladium Inorganic materials 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 8
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000012487 rinsing solution Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 5
- 239000003054 catalyst Substances 0.000 abstract description 7
- 239000000243 solution Substances 0.000 description 12
- 238000007747 plating Methods 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 239000012362 glacial acetic acid Substances 0.000 description 2
- 229960004592 isopropanol Drugs 0.000 description 2
- 150000002940 palladium Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- AEMRFAOFKBGASW-UHFFFAOYSA-M Glycolate Chemical compound OCC([O-])=O AEMRFAOFKBGASW-UHFFFAOYSA-M 0.000 description 1
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical class OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- -1 amine boranes Chemical class 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
Definitions
- the .surfacemust When a metal such as nickel is electrolessly deposited on a surface which is not normally a catalyst for such deposition, the .surfacemust first be activated by treating it with a catalyst. Although a number of metals catalyze the electroless deposition of nickel, the one mostoften used is palladium. A very thirifdiscontinuous film of palladium particles is deposited asa catalyzing medium by reducing a solution of a palladium salt which is in contact with the surface to be plated. If the palladium film is non-uniform, a non-uniform layer of nickel results.
- the palladium film When the palladium film is first deposited under conventional, carefully controlled-conditions, it is usually substantially uniform. But,- during the conventional step of rinsing with deionized water between deposition of the palladium and the subsequent nickel plating, non-uniformity of the palladium is often introduced, and this then causes difficulties with the nickel plating operation. There are often areas where nickel does not deposit and others where the nickel is too thin or too thick.
- the palladium-coated surface usually becomes dewetted.
- droplets of water form on the surface and these tend to pull the palladium into clumps.
- the coated surface is immersed in the nickel plating bath, the palladium particles are further moved around on the surface. Too much nickel may be deposited on the areas where the palladium is "clumped" and too little or none where the palladium is missing.
- the present invention is based on the discovery that, if a wetting agent of a particular type is included in the rinsing solution which is applied between the palladium deposition step and the nickel plating step, the original palladium deposit is not disturbed during the rinsing operation and uniformity of the nickel plating is considerably enhanced.
- the wetting agent must be one which does not interfere with the nickel plating operation.
- Glacial acetic acid 950 ml/liter 48% HF 50 ml/liter by wt.
- PdClg 2 ml/liter The amount of PdClsolution may be varied between 1 about 05 and ml/liter. If too much PdCl is present, the'deposit of palladium metal tends to become nonuniform and this leads to'non-uniformity in the nickel 5 deposit.
- the amount of 48% HF can be varied between about ml and 150m].
- the glacial acetic acid and the hydrofluoric acid improve the wetting of the silicon sur-' face by the -palladium solution and thus permit more uniform deposition of palladium at low concentration. This requires less palladium.
- the slices are immersed in the above catalyst solution for 20 seconds at C.
- the time can be varied'between about 5 seconds and 60 seconds.
- the solution is reduced by the silicon and palladium deposits mostly on the silicon and not on the silicon dioxide. However, some palladium does occasionally deposit on the oxide.
- the slices are immersed in this solution for 25 seconds at 25C.
- the propanol is used as a wetting agent.
- Other wetting agents such as other lower molecular weight alcohols (i.e., up to C which do not interfere with the subsequent nickel deposition, may be substituted. Higher molecular weight alcohols can also be used.
- the presence of the wetting agent prevents water droplets from forming and thus it prevents the rather loosely held palladium from being moved around on the surface.
- the amount used should be at least about 10% by volume of the rinsing solution. As the molecular weight rises, the amount of the alcohol used can be correspondingly less.
- the slices are immersed in a nickel plating bath which may have a composition such as the following, per liter of solution.
- the solvent used is deionized water.
- the slices are immersed in this solution for 3 minutes at 80C.
- the glycolate and the acetate are chelating agents. Other chelating agents may be used.
- the ammonium acetate is included to complex any palladium salt that may have been dragged over from the palladium catalyst solution despite thorough rinsing.
- the glycolate complexes the nickel. Any soluble nickel salt may be used and the concentration is not critical. Any conventional reducing agent for nickel may be used in place of the hypophosphite. Other examples are amine boranes and hydrazine.
- the pH range may be either 3.8 5.1 or 7.5 10.5.
- a coating of a sensitizing agent such as tin, must first be deposited. This must be ladium, in an aqueous solution containing a wetting agent that does not interfere with the subsequent electroless deposition of said metal on said surface.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
Abstract
A thin, discontinuous film of a catalyst is deposited on a surface to be plated. The surface is rinsed with a solution which includes a wetting agent for the surface, and is then electrolessly plated with a metal.
Description
Umted States Patent 1 1 1111 3,877,981 Arnold 5 1 Apr. 15, 1975 4] METHOD OF ELECTROLESS PLATING 2,556,540 5/1951 11611 1 96/50 R 3,399,268 8/1968 Schn'eble, Jr. et al. ll7/2l2 -1 Invent Amhmy Franc Arm), Rmges1 3,607,379 9/1971 Leinkran 117/212 3,632,435 1/1972 12111155 11 117/212 Assignee: Corporation York, 3,674,550 7/1972 Mallory...., 7/212 [22] Filed: 1973 Primary Examiner-John D. Welsh I [21] Appl. No.: 355,720 Attorney, Agent, or Firm-Glenn H. Bruestle; William S. Hill [52] US. Cl. 427/305; 106/1 [51] Int. Cl. B44d l/l8 [57] ABSTRACT [58] Fleld of Search 1 17/212 130 A thin, discontinuous film of a catalyst is deposited on a surface to be plated. The surface is rinsed with a so- References Cimd lut1on wh1ch mcludes a wettmg agent for the surface,
and is then electrolessly plated with a metal.
6 Claims, No Drawings 1 METHOD OF E acrrto Es's PLATING BACKGROUND OF THE INVENTION c,
When a metal such as nickel is electrolessly deposited on a surface which is not normally a catalyst for such deposition, the .surfacemust first be activated by treating it with a catalyst. Although a number of metals catalyze the electroless deposition of nickel, the one mostoften used is palladium. A very thirifdiscontinuous film of palladium particles is deposited asa catalyzing medium by reducing a solution of a palladium salt which is in contact with the surface to be plated. If the palladium film is non-uniform, a non-uniform layer of nickel results.
When the palladium film is first deposited under conventional, carefully controlled-conditions, it is usually substantially uniform. But,- during the conventional step of rinsing with deionized water between deposition of the palladium and the subsequent nickel plating, non-uniformity of the palladium is often introduced, and this then causes difficulties with the nickel plating operation. There are often areas where nickel does not deposit and others where the nickel is too thin or too thick.
During the rinsing step, the palladium-coated surface usually becomes dewetted. When the coated surface is lifted out of the rinsing bath, droplets of water form on the surface and these tend to pull the palladium into clumps. Also, when the coated surface is immersed in the nickel plating bath, the palladium particles are further moved around on the surface. Too much nickel may be deposited on the areas where the palladium is "clumped" and too little or none where the palladium is missing.
The present invention is based on the discovery that, if a wetting agent of a particular type is included in the rinsing solution which is applied between the palladium deposition step and the nickel plating step, the original palladium deposit is not disturbed during the rinsing operation and uniformity of the nickel plating is considerably enhanced. The wetting agent must be one which does not interfere with the nickel plating operation.
DESCRIPTION OF PREFERRED EMBODIMENT ing techniques followed by etching away the unwanted areas of silicon dioxide, The remaining hardened photoresist has then been removed.
in preparing the slices to be nickel plated on the electrode contact areas, they are etched lightly with a solution such as the following:
Glacial acetic acid 950 ml/liter 48% HF 50 ml/liter by wt. PdClg 2 ml/liter "The amount of PdClsolution may be varied between 1 about 05 and ml/liter. If too much PdCl is present, the'deposit of palladium metal tends to become nonuniform and this leads to'non-uniformity in the nickel 5 deposit.
The amount of 48% HF can be varied between about ml and 150m]. The glacial acetic acid and the hydrofluoric acid improve the wetting of the silicon sur-' face by the -palladium solution and thus permit more uniform deposition of palladium at low concentration. This requires less palladium.
The slices are immersed in the above catalyst solution for 20 seconds at C. The time can be varied'between about 5 seconds and 60 seconds. The solution is reduced by the silicon and palladium deposits mostly on the silicon and not on the silicon dioxide. However, some palladium does occasionally deposit on the oxide.
Next, the slices are rinsed with a solution which contains an agent which wets silicon. An example of this 20 solution is:
2 propanol deionized water The slices are immersed in this solution for 25 seconds at 25C. The propanol is used as a wetting agent. Other wetting agents, such as other lower molecular weight alcohols (i.e., up to C which do not interfere with the subsequent nickel deposition, may be substituted. Higher molecular weight alcohols can also be used. The presence of the wetting agent prevents water droplets from forming and thus it prevents the rather loosely held palladium from being moved around on the surface. If one of the lower molecular weight members of this series is used, (e.g., propanol or isopropanol) the amount used should be at least about 10% by volume of the rinsing solution. As the molecular weight rises, the amount of the alcohol used can be correspondingly less.
After treatment with the rinse solution, the slices are immersed in a nickel plating bath which may have a composition such as the following, per liter of solution. The solvent used is deionized water.
Sulfuric acid to pH 4.8
The slices are immersed in this solution for 3 minutes at 80C. The glycolate and the acetate are chelating agents. Other chelating agents may be used. The ammonium acetate is included to complex any palladium salt that may have been dragged over from the palladium catalyst solution despite thorough rinsing. The glycolate complexes the nickel. Any soluble nickel salt may be used and the concentration is not critical. Any conventional reducing agent for nickel may be used in place of the hypophosphite. Other examples are amine boranes and hydrazine. The pH range may be either 3.8 5.1 or 7.5 10.5.
If the surface being plated isnot one which is capable of reducing the catalyst ion, a coating of a sensitizing agent, such as tin, must first be deposited. This must be ladium, in an aqueous solution containing a wetting agent that does not interfere with the subsequent electroless deposition of said metal on said surface.
2 A method according to claim 1 in which said metal is nickel.
3. A method according to claim 2 in which said wetting agent is a low molecular weight alcohol.
4. A method according to claim 3 in which said alcohol is propanol.
5. A method according to claim'4 in which said propanol is present in an amount of at least about 10% by volume of the rinsing solution.
6. A method according to claim 1 in which said substrate is silicon.
Claims (6)
1. IN A METHOD OF ELECTROLESSLY DEPOSITING A METAL CATALYZED BY A FILM OF PALLADIUM ON A SUBSTRATE SURFACE, COMPRISING: DEPOSITING A THIN, DISCONTINUOUS FILM OF PALLADIUM ON SAID SURFACE, RINSING SAID SURFACE, AND ELECTROLESSLY DEPOSITING A METAL ON SAID SURFACE, THE IMPROVEMENT COMPRISING RINSING SAID SURFACE, AFTER DEPOSITING SAID FILM OF PALLADIUM, IN AN AQUEOUS SOLUTION CONTAINING A WETTING AGENT THAT DOES NOT INTERFERE WITH THE SUBSEQUENT ELECTROLESS DEPOSITION OF SAD METAL ON SAID SURFACE.
2. A method according to claim 1 in which said metal is nickel.
3. A method according to claim 2 in which said wetting agent is a low molecular weight alcohol.
4. A method according to claim 3 in which said alcohol is propanol.
5. A method according to claim 4 in which said propanol is present in an amount of at least about 10% by volume of the rinsing solution.
6. A method according to claim 1 in which said substrate is silicon.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US355720A US3877981A (en) | 1973-04-30 | 1973-04-30 | Method of electroless plating |
| JP49047042A JPS5239766B2 (en) | 1973-04-30 | 1974-04-24 | |
| BE143758A BE814359A (en) | 1973-04-30 | 1974-04-29 | ANELECTROLYTIC COATING PROCESS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US355720A US3877981A (en) | 1973-04-30 | 1973-04-30 | Method of electroless plating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3877981A true US3877981A (en) | 1975-04-15 |
Family
ID=23398564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US355720A Expired - Lifetime US3877981A (en) | 1973-04-30 | 1973-04-30 | Method of electroless plating |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3877981A (en) |
| JP (1) | JPS5239766B2 (en) |
| BE (1) | BE814359A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4264646A (en) * | 1979-03-12 | 1981-04-28 | Xerox Corporation | Selectively electrolessly depositing a metal pattern on the surface of a laminar film |
| EP0085332A2 (en) * | 1982-01-27 | 1983-08-10 | Bayer Ag | Metallised semiconductor and process for its manufacture |
| US4478883A (en) * | 1982-07-14 | 1984-10-23 | International Business Machines Corporation | Conditioning of a substrate for electroless direct bond plating in holes and on surfaces of a substrate |
| US5411606A (en) * | 1990-05-17 | 1995-05-02 | The Boeing Company | Non-chromated oxide coating for aluminum substrates |
| US5415687A (en) * | 1990-05-17 | 1995-05-16 | The Boeing Company | Non-chromated oxide coating for aluminum substrates |
| US5468307A (en) * | 1990-05-17 | 1995-11-21 | Schriever; Matthias P. | Non-chromated oxide coating for aluminum substrates |
| US5472524A (en) * | 1990-05-17 | 1995-12-05 | The Boeing Company | Non-chromated cobalt conversion coating method and coated articles |
| US5551994A (en) * | 1990-05-17 | 1996-09-03 | The Boeing Company | Non-chromated oxide coating for aluminum substrates |
| US5873953A (en) * | 1996-12-26 | 1999-02-23 | The Boeing Company | Non-chromated oxide coating for aluminum substrates |
| US6432225B1 (en) | 1999-11-02 | 2002-08-13 | The Boeing Company | Non-chromated oxide coating for aluminum substrates |
| GB2377227A (en) * | 2001-06-08 | 2003-01-08 | Murata Manufacturing Co | Metal film for use in a laminated ceramic electronic component and manufacturing method thereof |
| US20040058071A1 (en) * | 2002-09-24 | 2004-03-25 | International Business Machines Corporation | Colloidal seed formation for printed circuit board metallization |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2490760A (en) * | 1946-04-15 | 1949-12-06 | Eastman Kodak Co | Water spot prevention in photographic film |
| US2556540A (en) * | 1946-04-15 | 1951-06-12 | Eastman Kodak Co | Water spot prevention in photographic film |
| US3399268A (en) * | 1966-06-07 | 1968-08-27 | Photocircuits Corp | Chemical metallization and products produced thereby |
| US3607379A (en) * | 1968-01-22 | 1971-09-21 | Us Navy | Microelectronic interconnection substrate |
| US3632435A (en) * | 1968-07-12 | 1972-01-04 | Gylling & Co Ab | Preparation of substrate for electroless deposition |
| US3674550A (en) * | 1970-03-04 | 1972-07-04 | Allied Res Prod Inc | Method of electroless deposition of a substrate and sensitizing solution therefor |
-
1973
- 1973-04-30 US US355720A patent/US3877981A/en not_active Expired - Lifetime
-
1974
- 1974-04-24 JP JP49047042A patent/JPS5239766B2/ja not_active Expired
- 1974-04-29 BE BE143758A patent/BE814359A/en unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2490760A (en) * | 1946-04-15 | 1949-12-06 | Eastman Kodak Co | Water spot prevention in photographic film |
| US2556540A (en) * | 1946-04-15 | 1951-06-12 | Eastman Kodak Co | Water spot prevention in photographic film |
| US3399268A (en) * | 1966-06-07 | 1968-08-27 | Photocircuits Corp | Chemical metallization and products produced thereby |
| US3607379A (en) * | 1968-01-22 | 1971-09-21 | Us Navy | Microelectronic interconnection substrate |
| US3632435A (en) * | 1968-07-12 | 1972-01-04 | Gylling & Co Ab | Preparation of substrate for electroless deposition |
| US3674550A (en) * | 1970-03-04 | 1972-07-04 | Allied Res Prod Inc | Method of electroless deposition of a substrate and sensitizing solution therefor |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4264646A (en) * | 1979-03-12 | 1981-04-28 | Xerox Corporation | Selectively electrolessly depositing a metal pattern on the surface of a laminar film |
| EP0085332A2 (en) * | 1982-01-27 | 1983-08-10 | Bayer Ag | Metallised semiconductor and process for its manufacture |
| EP0085332A3 (en) * | 1982-01-27 | 1985-11-27 | Bayer Ag | Metallised semiconductor and process for its manufacture |
| US4478883A (en) * | 1982-07-14 | 1984-10-23 | International Business Machines Corporation | Conditioning of a substrate for electroless direct bond plating in holes and on surfaces of a substrate |
| US5487949A (en) * | 1990-05-17 | 1996-01-30 | Schriever; Matthias P. | Non-chromated oxide coating for aluminum substrates |
| US5415687A (en) * | 1990-05-17 | 1995-05-16 | The Boeing Company | Non-chromated oxide coating for aluminum substrates |
| US5468307A (en) * | 1990-05-17 | 1995-11-21 | Schriever; Matthias P. | Non-chromated oxide coating for aluminum substrates |
| US5472524A (en) * | 1990-05-17 | 1995-12-05 | The Boeing Company | Non-chromated cobalt conversion coating method and coated articles |
| US5411606A (en) * | 1990-05-17 | 1995-05-02 | The Boeing Company | Non-chromated oxide coating for aluminum substrates |
| US5551994A (en) * | 1990-05-17 | 1996-09-03 | The Boeing Company | Non-chromated oxide coating for aluminum substrates |
| US5873953A (en) * | 1996-12-26 | 1999-02-23 | The Boeing Company | Non-chromated oxide coating for aluminum substrates |
| US6432225B1 (en) | 1999-11-02 | 2002-08-13 | The Boeing Company | Non-chromated oxide coating for aluminum substrates |
| GB2377227A (en) * | 2001-06-08 | 2003-01-08 | Murata Manufacturing Co | Metal film for use in a laminated ceramic electronic component and manufacturing method thereof |
| US20030022492A1 (en) * | 2001-06-08 | 2003-01-30 | Teppei Akiyoshi | Metal film and manufacturing method therefor, and laminated ceramic electronic component and manufacturing method therefor |
| GB2377227B (en) * | 2001-06-08 | 2004-01-14 | Murata Manufacturing Co | Metal film and manufacturing method therefor and laminated ceramic electrical component and manufacturing method therefor |
| US6967163B2 (en) | 2001-06-08 | 2005-11-22 | Murata Manufacturing Co., Ltd. | Metal film and manufacturing method therefor, and laminated ceramic electronic component and manufacturing method therefor |
| US20040058071A1 (en) * | 2002-09-24 | 2004-03-25 | International Business Machines Corporation | Colloidal seed formation for printed circuit board metallization |
| US6852152B2 (en) | 2002-09-24 | 2005-02-08 | International Business Machines Corporation | Colloidal seed formulation for printed circuit board metallization |
| US20050042383A1 (en) * | 2002-09-24 | 2005-02-24 | International Business Machines Corporation | Colloidal seed formation for printed circuit board metallization |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5239766B2 (en) | 1977-10-07 |
| JPS5013228A (en) | 1975-02-12 |
| BE814359A (en) | 1974-08-16 |
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