US3811103A - Voltage-nonlinear resistors - Google Patents

Voltage-nonlinear resistors Download PDF

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Publication number
US3811103A
US3811103A US00398779A US39877973A US3811103A US 3811103 A US3811103 A US 3811103A US 00398779 A US00398779 A US 00398779A US 39877973 A US39877973 A US 39877973A US 3811103 A US3811103 A US 3811103A
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United States
Prior art keywords
mole percent
oxide
voltage
sintered body
value
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Expired - Lifetime
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US00398779A
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English (en)
Inventor
M Matsuoka
Y Kobayashi
G Itakura
T Masuyama
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority claimed from JP47094745A external-priority patent/JPS5213639B2/ja
Priority claimed from JP47094743A external-priority patent/JPS5213637B2/ja
Priority claimed from JP47094742A external-priority patent/JPS5213636B2/ja
Priority claimed from JP47094741A external-priority patent/JPS529313B2/ja
Priority claimed from JP47094744A external-priority patent/JPS5213638B2/ja
Priority claimed from JP47094740A external-priority patent/JPS529312B2/ja
Priority claimed from JP47094739A external-priority patent/JPS529311B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of US3811103A publication Critical patent/US3811103A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01TSPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T1/00Details of spark gaps
    • H01T1/16Series resistor structurally associated with spark gap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105Varistor cores
    • H01C7/108Metal oxide
    • H01C7/112ZnO type

Definitions

  • ABSTRACT The invention. relates to voltage-nonlinear resistors having non-ohmic resistance due to the bulk thereof, and more particularly tovaristors which are suitable for use as elements of lightning arresters, comprising zinc oxide, bismuth oxide, antimony oxide andnickel fluoride.
  • V and V are the voltages at given currents I, and 1 respectively.
  • the desired value of C depends upon the kind of application to which the resistor is to be put. It is ordinarily desirable that the value of n be as large as possible since this exponent determines the extent to which the resistors depart from ohmic characteristics.
  • ri-value defined by I I V and V, as shown in equation (2) is expressed by m for distinguishing it from the n-value calculated by other currentsor voltages.
  • Nonlinear resistors comprising sintered bodies of zinc oxide with. or without additives and non-ohmic electrode appliedthereto, have already been disclosed as seen in us. Pat. Nos. 3,496,512, 3,570,002 and 3,503,029.
  • the nonlinearity of such varistors is attributed to the interface between thesintered body of zinc oxide with or without additives and the silver paint electrode and is controlled mainly by changing the compositions of said sintered body and silver paint electrode.”l"-herefore, it is not easy to control the C- value over a wide rangeafter the sintered body is prepared.
  • varistors comprising germanium or silicon p-n junctiondiodes
  • thesilicon carbide. varistors have nonlinearity due to the contact between the individual grains of silicon carbide bonded together by a ceramic binding material, i.e. to the bulk, and the C-value is controlled by changing dimensionin the direction in which the current flows through the varistors.
  • the silicon carbide varistors have high surge resistancewhich is suitable for'characteristic elements of lightning arresters. The characteristic elements are used usually by connecting in series with discharging gaps and determine the level of the discharging voltage and the follow current.
  • the silicon carbide varistors however, have a relatively low n-value ranging from 3 to 7 which results in poor suppression of lightning surge or increase in the follow current. Another defect of the arrester including the discharging.
  • voltagenonlinear resistors of bulk type comprising a sintered body of zinc oxide-with additives comprising bismuth oxide and antimony oxide and/or cobalt oxide, as seen in U. S. Pat. No. 3,663,458.
  • These zinc oxide varistors of bulk type are controllable in a Cvalue by changing the distance between electrodes and have an excellent nonlinear property with an n-value more than 10 in a region of current below than IOA/cr'n. Fora current more than l0A/cm however, the n-value goes down to a value below than 10.
  • the power dissipation for surge energy shows a relatively low value compared .withthat of the conventional silicon carbide arrester,
  • An object of the present invention is to provide a voltage-nonlinear resistor having nonlinearity due to the bulk thereof and being characterized by a-high nvalue even in a range of current more than lOA/cm.
  • Another object of the present invention is toprovide a voltage-nonlinear resistor having high power dissipation for surge energy.
  • Another object of the present invention is to provide an arrester characterized by high suppression for lightning surges and low followcurrent.
  • FIG. 1 is a partial cross-sectional view through a voltage-nonlinear resistor in accordance with the invention and FIG. 2 and FIG. 3 partial cross-sectional views through an arrester in accordance with the invention.
  • reference character 10 designates, as a whole, a voltage-nonlinear resistor compri sing,'as its active element, a sintered body having a pair of electrodes and 3 applied to opposite surfaces thereof.
  • Said sintered body 1 is prepared in a manner hereinaf-v ter set forth.
  • Wireleads Sand 6 are attached conductively to the electrodes 2 and 3, respectively, by a connection means 4 such as solder or the like. 7
  • a voltage-nonlinear resistor according to the invention comprises a sintered body of a composition comprising, as an additive, 0.1 to 3.0 mole percent of bismuth oxide (Bi O 0.05 to 3.0 mole percent of antimony oxide Sb-,; O and 0.1 to 3.0 mole percent of nickel fluoride (NiFQ), and the remainder of zinc oxide (ZnO) as a main constituent, and electrodes applied to opposite surfaces of said sintered body.
  • a voltagenonlinear resistor has non-ohmic resistance due to the bulk itself.
  • the higher n-value in a region of current more than IOA/cm can be obtained when said sintered body further includes one member selected from the group consisting of 0.1 to 3.0 mole percent of cobalt oxide (C) and 0.1 to 3.0 'mole percent of manganese oxide
  • the higher nvalue in a region of current more than IOA/cm and the higher stability for surge pulses can be obtained when said sintered body comprises, as a main constituent, Zinc oxide (ZnO) and, as an additive, 0.1 to 3.0 mole percent of bismuth oxide (Bi O 0.05 to 3.0 mole percent of antimony oxide (Sb O 0.1 to 3.0 mole percent of nickel fluoride (MP 0.] to 3.0 mole percent of cobalt oxide (C00), 0.] to 3.0 mole percent of manganese oxide (MnO) and one member selected from the group consisting of 0.05 to 3.0
  • At least one voltage-nonlinear resistor consisting essentially of a sintered body of 99.4 to 72.0 mole percent of zinc oxide (ZnO), 0.1 to 3.0 mole I percent of bismuth oxide (Bi O 0.05 to 3.0 mole percent of antimony oxide (Sb O 0.-l to 3.0 mole percent of nickel fluoride (NiF 0.1 to 3.0 mole percent of cobalt oxide (C00),
  • Manganese oxide MnO
  • chromium oxide Cr O and 0.1 to l0.0,mole percent of silicon dioxide (SiO and electrodes applied to opposite surfaces of said sintered body, is applied as a characteristic element to an arrester, the resultant arrester is further lowered in the follow current and is further improved in the suppression and power dissipation for lightning surge.
  • the sintered body 1 can be prepared by a per se well known ceramic technique.
  • the starting materials in the compositions in the foregoing description are mixed in a wet mill so as to produce homogeneous mixtures.
  • the pressed bodies are sintered in air at I,000 to 1,450C for l to 10 hours, and then furnacecooled to room temperature (about 15C to about 30C).
  • the mixtures can be preliminarily calcined at 700 to 1,000C and pulverized for easy fabrication in the subsequent pressing step.
  • the mixture to be pressed can be admixed with a suitable binder such as water, polyvinyl alcohol, etc. It is advantageous that the sintered body be lapped at the opposite surfaces by abrasive powder such as silicon carbide in a particle size of 50a in mean diameter to 10].. in mean diameter.
  • the sintered bodies are provided, at the opposite surfaces thereof, with electrodes by any available and suitable method, such as silver painting, vacuum evaporation or flame spraying of a metal such as Al, Zn, Sn, etc.
  • the voltage-nonlinear properties are not practically affected by the kinds of electrodes used, but are affected by the thickness of the sintered bodies. Particularly, the C-value varies in proportion to the thickness of the sintered bodies, while the n-value is almost independent of the thickness. This surely means that the voltage-nonlinear property is due to the bulk itself, but not to the electrodes.
  • Electrode wires can be attached to the electrodes in a per se conventional manner by using conventional solder. It is convenient to employ a conductive adhesive comprising silver powder and resin in an organic solvent in order to connect the lead wires to the electrodes.
  • Voltage-nonlinear resistors according to this invention have a high stability to temperature and for the surge test, which is carried out by applying lightning surge determined by the .IEC (Japanese Electrotechnical Committee)-l56 Standard. The n-value and-C-value do not change remarkably after heating cycles and surge test. It is advantageous for achievement of a high stability to humidity and high surge that the resultant voltagenonlinear resistors are embedded in a humidity proof resin such as epoxy resin and phenol resin in a per se well known manner.
  • FIG. 2 is the cross-sectional view of an arrester wherein reference character 20 designates, as a whole, an arrester comprising one or more voltage-nonlinear resistors 11 ac'cordingto this invention as a characteristic element are connected in series with one or more discharging gaps'12, spring 13 and line terminals 14 and 15. Said arrester elements are enveloped into wetprocess porcelain 16. Said arrester is kept to a level below 'luA in follow current and to a level higher than 2,000A/cm in the surge dissipation.
  • FIG. 20 designates, as a whole, an arrester comprising one or more voltage-nonlinear resistors 11 ac'cordingto this invention as a characteristic element are connected in series with one or more discharging gaps'12, spring 13 and line terminals 14 and 15. Said arrester elements are enveloped into wetprocess porcelain 16. Said arrester is kept to a level below 'luA in follow current and to a level higher than 2,000A/cm in the surge
  • FIG. 3 is the crosssectional view of another arrester wherein reference character 30 designates, as a whole, an arrester comprising at least one voltage-nonlinear resistor according to this invention.
  • reference characters identical to those of FIG. 2 have been employed to designate like elements.
  • the arrester of FIG. 3 is characterized, in its construction, to be without discharging gap and, in its electrical properties as having a response time shorter than 0.1ps for high surges having very sharp rise, in addition to its excellent properties in follow current and surge dissipation.
  • Presently preferred illustrative embodiments of the inven- EXAMPLE 2 tion are as follows.
  • l Zmc oxide incorporated with bismuth oxide, antimony oxide, andnickel fluoride in the c T able 2 is fabricated into the volta tors by the same process as that thickness is 20mm.
  • the resulting. electrical are shown in Table 2, in which the values of m and n, are the n-values'defined between 0. lmA and l between 100 and 1,000A, respectively.
  • the im test is carried out by applying two im l0,000A. It can be easily understood addition of bismuth oxide, antimony oxide, and nickel fluoride as additives show the high n-value and small change rates.
  • the pressed bodies are sintered in air at the condition shown in Table l, and then furnace-cooled to room temperature.-
  • the sintered body is lapped at the opposite surfaces thereof into the thickness shown in Table l by silicon carbide abrasive in particle size of 30p, in means diameter-
  • the opposite surfaces of the sintered body are provided with a spray metallized film ofaluminum in a per se well known technique.
  • EXAMPLE 3 Zinc oxide and additives of Table 3 are fabricated into the voltage-nonlinear resistors by the same process as that of Example 1. The electrical properties of the resulting resistors. are shown in Table 3 The change TABLE 1 rates of C and n values after the impulse test are carried out by same method as that of Example 2- are also shown in Table 3. It will be readily realized that the further addition of cobalt oxide or manganese oxide results in a higher n-value and smaller change rates than 2 e l. m a X E f o e s 0 h t. 0 a dv mm mm r .1.
  • the impulse tests are carried out by applying two impulses -of 4 10p.s, 1,500A/cm superposed on AC 3000V.
  • the follow current of the arrester shows a value lower than 1 4A as shown in Table 6 and the change rates of electrical properties after the test show same results asthe impulse test of Example 2, 3 and 4.
  • Table 5 shows the average change rates of C-value and n-value .of resistors after heating cycle test and humidity test. It is easily understood that each sample has a small change rate. 4
  • EXAMPLE 7 The voltage-nonlinear resistors according to Example 2, 3 and 4 are employed in the arrester construction ample 6.
  • the follow current shows a value lower than l/IAEEEHGWn in Table Find the change rates ofelectrical properties after testing show same the results as i that of. the impulse test in Example 2, 3 and 4. Another ing the value of 0.-l;zs in-rise time.
  • the risetime of 7 current flowing through said arrester is lower than 0.05us.
  • a voltage-nonlinear resistor consisting essentially of a sintered body of a composition comprising as a main constituent, zinc oxide (ZnO) and, as an additive, 0.! to 3.0 mole percent of bismuth oxide (850;), 0.05 to 30 mole percentof antimony oxide (Sb O and 0.1 to 3.0 mole percent of nickel fluoride (MB), and electrodes applied to opposite surfaces of said sintered body.
  • C00 cobalt oxide
  • MnO manganese oxide

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
US00398779A 1972-09-20 1973-09-19 Voltage-nonlinear resistors Expired - Lifetime US3811103A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP47094745A JPS5213639B2 (zh) 1972-09-20 1972-09-20
JP47094743A JPS5213637B2 (zh) 1972-09-20 1972-09-20
JP47094742A JPS5213636B2 (zh) 1972-09-20 1972-09-20
JP47094741A JPS529313B2 (zh) 1972-09-20 1972-09-20
JP47094744A JPS5213638B2 (zh) 1972-09-20 1972-09-20
JP47094740A JPS529312B2 (zh) 1972-09-20 1972-09-20
JP47094739A JPS529311B2 (zh) 1972-09-20 1972-09-20

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US (1) US3811103A (zh)
CA (1) CA977872A (zh)
DE (1) DE2342172C3 (zh)
FR (1) FR2200594B1 (zh)
GB (1) GB1421387A (zh)
IT (1) IT994283B (zh)
NL (1) NL182181C (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2500291A1 (de) 1974-02-20 1975-08-21 Matsushita Electric Ind Co Ltd Spannungsabhaengiger widerstand
US4015228A (en) * 1974-06-10 1977-03-29 Matsushita Electric Industrial Co., Ltd. Surge absorber
US4489291A (en) * 1981-10-12 1984-12-18 Tokyo Shibaura Denki Kabushiki Kaisha Circuit breaker provided with parallel resistor
US4538347A (en) * 1984-06-18 1985-09-03 Gte Laboratories Incorporated Method for making a varistor package
US5075666A (en) * 1989-12-15 1991-12-24 Electric Power Research Institute Varistor composition for high energy absorption
US5107242A (en) * 1990-08-20 1992-04-21 Ngk Insulators, Ltd. Voltage non-linear resistor for gapped lightning arrestors and method of producing the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2526137C2 (de) * 1975-06-10 1985-03-21 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Zinkoxid-Varistors
DE2848454C2 (de) * 1978-11-08 1982-12-16 Siemens AG, 1000 Berlin und 8000 München Anordnung zur Halterung von elektrische Anlagen gegen Überspannungen schützenden Elementen
DE3900787A1 (de) * 1989-01-12 1990-07-19 Siemens Ag Verfahren zur herstellung eines keramischen elektrischen bauelementes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3658725A (en) * 1970-07-24 1972-04-25 Matsushita Electric Ind Co Ltd Nonlinear resistor and nonlinear resistor composition
US3687871A (en) * 1970-07-24 1972-08-29 Matsushita Electric Ind Co Ltd Nonlinear resistor and nonlinear resistor composition
US3760318A (en) * 1971-08-27 1973-09-18 Matsushita Electric Ind Co Ltd Process for making a voltage dependent resistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840790B1 (zh) * 1969-05-02 1973-12-03

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3658725A (en) * 1970-07-24 1972-04-25 Matsushita Electric Ind Co Ltd Nonlinear resistor and nonlinear resistor composition
US3687871A (en) * 1970-07-24 1972-08-29 Matsushita Electric Ind Co Ltd Nonlinear resistor and nonlinear resistor composition
US3760318A (en) * 1971-08-27 1973-09-18 Matsushita Electric Ind Co Ltd Process for making a voltage dependent resistor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2500291A1 (de) 1974-02-20 1975-08-21 Matsushita Electric Ind Co Ltd Spannungsabhaengiger widerstand
DE2500291B2 (de) 1974-02-20 1977-02-10 Matsushita Electric Industrial Co., Ltd., Kadotna, Osaka (Japan) Spannungsabhaengiger widerstand mit einer spannungsabhaengigkeit allein aufgrund der masse seines gesinterten koerpers
US4015228A (en) * 1974-06-10 1977-03-29 Matsushita Electric Industrial Co., Ltd. Surge absorber
US4489291A (en) * 1981-10-12 1984-12-18 Tokyo Shibaura Denki Kabushiki Kaisha Circuit breaker provided with parallel resistor
US4538347A (en) * 1984-06-18 1985-09-03 Gte Laboratories Incorporated Method for making a varistor package
US5075666A (en) * 1989-12-15 1991-12-24 Electric Power Research Institute Varistor composition for high energy absorption
US5107242A (en) * 1990-08-20 1992-04-21 Ngk Insulators, Ltd. Voltage non-linear resistor for gapped lightning arrestors and method of producing the same

Also Published As

Publication number Publication date
IT994283B (it) 1975-10-20
FR2200594A1 (zh) 1974-04-19
FR2200594B1 (zh) 1976-11-19
DE2342172B2 (de) 1979-01-18
NL7311582A (zh) 1974-03-22
CA977872A (en) 1975-11-11
DE2342172A1 (de) 1974-04-18
GB1421387A (en) 1976-01-14
DE2342172C3 (de) 1979-09-27
NL182181C (nl) 1988-01-18

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