US3806765A - Voltage-nonlinear resistors - Google Patents

Voltage-nonlinear resistors Download PDF

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Publication number
US3806765A
US3806765A US00335421A US33542173A US3806765A US 3806765 A US3806765 A US 3806765A US 00335421 A US00335421 A US 00335421A US 33542173 A US33542173 A US 33542173A US 3806765 A US3806765 A US 3806765A
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United States
Prior art keywords
mole percent
oxide
voltage
sintered body
value
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Expired - Lifetime
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US00335421A
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English (en)
Inventor
T Masuyama
M Matsuoka
M Matsuura
Y Kobayashi
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority claimed from JP47021807A external-priority patent/JPS5140942B2/ja
Priority claimed from JP47021812A external-priority patent/JPS5140947B2/ja
Priority claimed from JP47021810A external-priority patent/JPS5140945B2/ja
Priority claimed from JP47021808A external-priority patent/JPS5140943B2/ja
Priority claimed from JP47021806A external-priority patent/JPS5140941B2/ja
Priority claimed from JP47021811A external-priority patent/JPS5140946B2/ja
Priority claimed from JP47021809A external-priority patent/JPS5140944B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of US3806765A publication Critical patent/US3806765A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T1/00—Details of spark gaps
    • H01T1/16—Series resistor structurally associated with spark gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type

Definitions

  • ABSTRACT A voltage-nonlinear resistor has a sintered body of a composition comprising, as a main constituent, zinc oxide (ZnO) and, as an additive, 0.1 to 3.0 mole percent of bismuth oxide (B1 0 0.05 to 3.0 mole per- "cent of antimony oxide (Sb O and 0.1 to 3.0 mole percent of manganese fluoride (MnF Electrodes are applied to opposite surfaces of the sintered body.
  • ZnO zinc oxide
  • B1 0 0.05 to 3.0 mole per- "cent of antimony oxide (Sb O and 0.1 to 3.0 mole percent of manganese fluoride (MnF Electrodes are applied to opposite surfaces of the sintered body.
  • the invention relates to nonlinear resistors having non-linear ohmic resistance in response to changes in voltage due to the bulk thereof hereinafter called voltage-nonlinear and more particular to varistors, which are for useful elements of lightning arrestors,
  • n a numerical value greater than 1. The value of n is calculated by the following equation:
  • V, and V are the voltages at given currents I and I respectively.
  • the desired value of C depends upon the kind of application to which the resistor is to be put. it is ordinarily desirable that the value of n be as large as possible since this exponent determines the extent to which the resistors depart from ohmic characteristics.
  • the n-value defined by 1,, [2, V, and V as shown in equation (2) is expressed by /1 for distinguishing it from the n-value calculated by other currents or voltages.
  • Nonlinear resistors comprising sintered bodies of zinc oxide with or without additives and havingnon-ohmic electrodes applied thereto, have already been disclosed as seen in U.S. Pats. No. 3,496,512, No. 3,570,002 and No. 3,503,029.
  • the nonlinearity of such varistors is attributed to the interface between the sintered body of zinc oxide with or without additives and the silver paint electrode and is controlled mainly be changing the compositions of said sintered body and silver paint electrode. Therefore, it is not easy to control the C-value over a wide range after the sintered body is prepared.
  • varistors comprising germanium or silicon p-n junction diodes.
  • varistors and germanium or silicon diode varistors have a combination of C-value higher than 100 volts n-value higher than and high surges of resistance tolerable for surge more than 100A.
  • the silicon carbide varistors have nonlinearity clue to the contacts among the individual grains of silicon carbide bonded together by a ceramic binding material, i.e., due to the bulk, and the C-value is controlled by changing the dimension in the direction in which the current flows through the varistors.
  • the silicon carbide varistors have high surge resistance which make them useful as elements of lightning arresters. The elements are used usually by connecting them in series with discharging gaps to control the level of the discharging voltage and the follow current.
  • the silicon carbide varistors however, have a relatively low n-value ranging from 3 to 7 which results in poor suppression of lightning surge or increase in the follow current.
  • Another defect of the arrester including the discharging gaps as components is that it does not respond instantaneously to surge voltage having a very short rise time such as below l,u.s. It is desirable for the arrester to suppress the lightning surge and the follow current to a level as low as possible and respond to surge voltage instantaneously.
  • voltagenonlinear resistors of the bulk type comprising a sintered body of zinc oxide with additives comprising bismuth oxide and antimony oxide and/or manganese oxide, as seen in U.S. Pat. No. 3,663,458.
  • the C- value of these zinc oxide varistors of the bulk type can be controlled by changing the distance between electrodes and have an excellent nonlinear property and an n-value more than 10 in a region of current below 10A/cm For a current more than l0A/cm however, the n-value goes down to a value below 10.
  • the power dissipation for surge energy shows a relatively low value compared with that of the conventional silicon carbide arrester, so that the change rate of C-value exceeds 20 percent after two standard lightning surges of 4 X IOfLS wave with a form having a peak current of 1500A/cm are applied to said zinc oxide varistor 0f the bulk type.
  • Another zinc oxide varistor of the bulk type which contains as an additive manganese fluoride as seen in U.S. Pat. No. 3,642,664.
  • This varistor has an excellent nonlinear property, but an essentially weak point as an arrester element is its weakness with respect to a surge pulse. The nonlinear property of the varistor deteriorates easily even for Ap/cm of surge pulse.
  • An object of the present invention is to provide a voltage-nonlinear resistor having nonlinearity due to the bulk thereof and being characterized by a high nvalue even in a range of current more than IOA/cm.
  • Another object of the present invention is to provide a voltage-nonlinear resistor having high power dissipation for surge energy.
  • Another object of the present invention is to provide an arrester characterized by high suppression for a lightning surge and low follow current.
  • FIG. 1 is a partly cross-sectional view through a voltage-nonlinear resistor in accordance with the invention
  • FIG. 2 and FIG. 3 are partly cross-sectional views through an arrester in accordance with the invention.
  • reference character 10 designates, as a whole, a voltage-nonlinear resistor comprising, as its active element, a sintered body having a pair of electrodes 2 and 3 applied to opposite surfaces thereof.
  • Said sintered body 1 is prepared in a manner hereinafter set forth.
  • Wire leads 5 and 6 are attached conductively to the electrodes 2 and 3, respectively, by a connection means 4 such as solder or the like.
  • a voltage-nonlinear resistor comprises a sintered body of a composition comprising, as an additive, 0.1 to 3.0 mole percent of bismuth oxide (Bi O 0.05 to 3.0 mole percent of antimocy oxide (Sb O and 0.1 to 3.0 mole percent of manganese fluorideYMnFz and th erem ainder zinc oxide (ZnO) as a main constituent, and electrodes applied to opposite surfaces of said sintered body.
  • a voltage-nonlinear resistor has non-ohmic resistance due to the bulk itself. Therefore, its C-value can be changed without impairing the n-value' by changing the distance between said opposite surfaces.
  • said resistor has a high n-value in a region of current more than l0A/cm and high stability with respect to surge pulses.
  • the highefh-value in a region of current more i536 IOA/cm can be obtained when said sintered body further includes one member selected from the group consisting of 0.1 and 3.0 mole percent of cobalt oxide (C00) and 0.1 to 3.0 mole percent of manganese oxide (MnO).
  • C00 cobalt oxide
  • MnO manganese oxide
  • the higher nvalue in a region of current more than lOA/cm and the higlir st ability with resaefarsurga ill sesame obtained with said sintered body comprises, as a main constituent, zinc oxide (ZnO) and, as an additive, 0.1 to 3.0 mole percent of bismuth oxide (Bi2O 0.05 to 3.0 mole percent of antimony oxide (Sb-20 0.1 to 3.0 mole percent of manganese fluoride (MnFg), 0.1 to 3.0 mole percent of cobalt oxide (C00), 0.1 to 3.0 mole percent of manganese oxide (MnO) and one member selected from the group consisting of 0.05 to 3.0 mole percent of chromium oxide (Cr O 0.1 to 3.0 mole percent of tin oxide (SnO and 0.1 to 10.0 mole percent of silicon dioxide (SiO
  • the n-value of the resistor is remarkably improved in a region of current more than
  • th'e'prsem invention when at least one voltage-nonlinear resistor consisting essentially of a sintered body of 99.4 to 72.0 mole percent of zinc oxide (ZnO), 0.1 to 3.0 mole percent of bismuth oxide (Bi- 0 0.05 to 3.0 mole percent of antimony oxide (Sb- 0 0.1 to 3.0 mole percent of manganese fluoride (MB), 0.1 to 3.0 mole percent of cobalt oxide (C00), 0.1 to 3.0 mole percent of manganese oxide (MnO), 0.05 to 3.0 mole percent of chromium oxide (Cr- 0 and 0.1 to 10.0 mole percent of silicon dioxide (SiO and electrodes applied to opposite surfaces of said sintered body is used as a characteristic element in an arrester, the resultant arrester produces a still further lowered follow current and has further improved supression and power dissipation with respect to a lightning surge.
  • ZnO zinc oxide
  • Ba- 0 0.05 to 3.0 mo
  • the sintered body 1 can be prepared by a per se well known ceramic technique.
  • the starting materials in the compositions in the foregoing description are mixed in a wet mill so as to produce homogeneous mixtures.
  • the mixtures are dried and pressed in a mold into desired shapes at a pressure from 50 l(g./cm to 500 Kg./cm
  • the pressed bodies are sintered in air at l000 to l450C for l to 10 hours, and then furnace-cooled to room temperature (about 15C to about 30C).
  • the mixtures can be preliminarily calcined at 700 to 1000C and pulverized for easy fabrication in the subsequent pressing step.
  • the mixture to be pressed can be admixed with a suitable binder such 26 water, polyvinyl alcohol, etc. It is advantageous that the sintered body be lapped on the opposite surfaces by abrasive powder such as silicon carbide having a particle size of 50p. in means diameter to 10p. in mean diameter.
  • abrasive powder such as silicon carbide having a particle size of 50p. in means diameter to 10p. in mean diameter.
  • the sintered bodies are provided, at the opposite surfaces thereof with electrodes by any available and suitable method such as silver painting, vacuum evaporation or flame spraying of metal such as Al, Zn, Sn etc.
  • the voltage-nonlinear properties are not affected to any practical extent by the kinds of electrodes used, but are affected by the thickness of the sintered bodies. Particularly, the C-value varies in proportion to the thickness of the sintered bodies, while the n-value is almost independent of the thickness. This surely means that the voltage-nonlinear property is due to the bulk itself, but not to the electrodes.
  • Electrode wires can be attached to the electrodes in a per se conventional manner by using conventional solder. It is convenient to employ a conductive adhesive comprising silver powder and resin in an organic solvent in order to connect the lead wires to the electrodes.
  • Voltage-nonlinear resistors according to this invention have a high stability with respect to temperature and a surge test, which is carried out by applying a lightning surge determined by the J EC (Japanese Electrotechnical Committee)-l56 Standard. The n-value and C-value do not change remarkably after heating cycles and the surge test. It is advantageous for achievement of a high stability with respect to humidity and high surge current that the resultant voltage-nonlinear resistors be embedded in a humidity proof resin such as epoxy resin and phenol resin in a per se well known manner.
  • FIG. 2 is a crosssectional view of an arrester wherein reference character 20 designates, as a whole, an arrester comprising, one or more voltage-nonlinear resistors according to this invention 11 as elements which are connected in series with one or more discharging gaps 1 2, spring 13 and line terminals 14 and 15, Said arrester elements are enveloped in wet-process porcelain 16.
  • said arrester the follow current is kept to a level below 1 11A and surge dissipation to a level higher than ZOOOA/cm
  • FIG. 3 is a cross-sectional view of another arrester wherein reference character 30 designates, as a whole, an arrester comprising at least one voltage-nonlinear resistor according to this invention.
  • reference characters identical to those of FIG. 2 have been employed to designate like elements.
  • the arrester o f FTC. 3 has no disefiaiging a s'anudias'a response time shorter than 0.1 as for high surge having very sharp rise in respect to addition to its excellent properties in follow current and surge dissipation.
  • Presently preferred illustrative embodiments of the invention are as follows.
  • EXAMPLE 1 Starting material composed of 98.0 mole percent of zinc oxide, 0.5 mole percent of bismuth oxide, 1.0 mole percent of antimony oxide, and 0.5 mole percent of manganese fluoride is mixed in a wet mill for 24 hours.
  • the mixture is dried and pressed in a mold into discs of 40 mm in diameter and 25 mm thickness at a pressure of 250Kg/cm
  • the pressed bodies are sintered in air at the con ditions shown in Table l, and then furnace-cooled to room temperature.
  • Each sintered body is lapped at the opposite surfaces thereof into the thickness shown in Table 1 by silicon carbide abrasize having a particle size of 30,11 in mean diameter.
  • the opposite surfaces of each sintered body are provided with a spray metallized film of aluminum by a per se well known technique.
  • the resulting electrical properties are shown in Table 2, in which the values of m and n are the n-values defined 20 between 0.1mA and lmA, and between 100 and 1000A, respectively.
  • the impulse test is carried out by applying 2 impulses of 4 l0us, 10,000A. It can be easily understood that the combined addition of bismuth oxide, antimony oxide, and manganese fluoride as additives produces the high n-values and small change rates.
  • EXAMPLE 3 Zinc oxide with the additives of Table 3 is fabricated into the voltage-nonlinear resistors by the same 1 process as that of Example 1.
  • the electrical properties of the resulting resistors are shown in Table 3.
  • the change rates of C and n values after an impulse test TABLE 1 carried out by same method as that of Examples 2 Thickness C n simmng are also shown in Table 3. It Wlll be readily realized (mm) (at lmA) 0.1-lmA I Condition that the further addition of cobalt oxide or manganese (20) ⁇ 228 ⁇ i 5 oxide results in a higher n-value and smaller change 10 905 is 1200C, 5hr rates that those of Example 2.
  • EXAMPLE 7 The voltage-nonlinear resistors according to Exam-- ples 2, 3 and 4 are incorporated in an arrester as shown in F IG. 3 in a series connection of 3 resistors. The total C-value of said resistors is about 7000V.
  • An impulse test was carried out by the same method as that of Example 6. The follow current had the value lower than 1,uA as shown in Table 6 and the change rates of electrical properties after the test showed same results as that of the impulse test in Examples 2, 3 and 4.
  • Another impulse test was carried out by applying an impulse having a value of 0.01 ts rise time. The rise time of current flowing through said arrester was lower than 0.05ps.
  • a voltage-nonlinear resistor consisting essentially of a sintered body of a composition comprising, as a main constituent, zinc oxide (ZnO) and, as an additive, 0.1 to 3.0 mole percent of bismuth oxide (Bi o 0.05 to 3.0 mole percent of antimony oxide (Sb O and 0.1 to 3.0 mole percent of manganese fluoride (MnF and electrodes applied to opposite surfaces of said sintered body.
  • ZnO zinc oxide
  • Sb O antimony oxide
  • MnF manganese fluoride
  • C00 cobalt oxide
  • MnO manganese oxide
  • C00 cobalt oxide
  • MnO manganese oxide
  • SiO silicon dioxide
  • An arrestor comprising at least bn e voltagenonlinear resistor of claim 1 as a characteristic element.
  • An arrester comprising at least one voltagenonlinear resistor of claim 4 as a characteristic element.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)
US00335421A 1972-03-01 1973-02-23 Voltage-nonlinear resistors Expired - Lifetime US3806765A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP47021807A JPS5140942B2 (ja) 1972-03-01 1972-03-01
JP47021812A JPS5140947B2 (ja) 1972-03-01 1972-03-01
JP47021810A JPS5140945B2 (ja) 1972-03-01 1972-03-01
JP47021808A JPS5140943B2 (ja) 1972-03-01 1972-03-01
JP47021806A JPS5140941B2 (ja) 1972-03-01 1972-03-01
JP47021811A JPS5140946B2 (ja) 1972-03-01 1972-03-01
JP47021809A JPS5140944B2 (ja) 1972-03-01 1972-03-01

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US (1) US3806765A (ja)
CA (1) CA968066A (ja)
FR (1) FR2174176B1 (ja)
GB (1) GB1381246A (ja)
IT (1) IT977552B (ja)
NL (1) NL169651C (ja)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3899451A (en) * 1972-09-11 1975-08-12 Tokyo Shibaura Electric Co Oxide varistor
DE2500291A1 (de) 1974-02-20 1975-08-21 Matsushita Electric Ind Co Ltd Spannungsabhaengiger widerstand
US3999159A (en) * 1974-04-05 1976-12-21 Matsushita Electric Industrial Co., Ltd. Voltage-dependent resistor
US4035693A (en) * 1974-07-02 1977-07-12 Siemens Aktiengesellschaft Surge voltage arrester with spark gaps and voltage-dependent resistors
FR2395627A1 (fr) * 1977-06-22 1979-01-19 Mitsubishi Electric Corp Dispositif formant parafoudre
FR2405553A1 (fr) * 1977-10-07 1979-05-04 Mitsubishi Electric Corp Perfectionnement a un parafoudre enferme
US4161012A (en) * 1977-03-02 1979-07-10 Joslyn Mfg. And Supply Co. High voltage protection apparatus
US4172268A (en) * 1976-09-30 1979-10-23 Tokyo Shibaura Denki Kabushiki Kaisha Direct current circuit interrupting apparatus
US4258407A (en) * 1978-03-18 1981-03-24 Mitsubishi Denki Kabushiki Kaisha Lightning arrester device for power transmission line
US4292619A (en) * 1978-01-12 1981-09-29 U.S. Philips Corporation Resistance material
US4308566A (en) * 1979-01-11 1981-12-29 Mitsubishi Denki Kabushiki Kaisha Lightning arrester device for power transmission line
US4349855A (en) * 1978-03-18 1982-09-14 Mitsubishi Denki Kabushiki Kaisha Lightning arrester
US4352139A (en) * 1980-02-04 1982-09-28 Rte Corporation Flexible connector for H.V. arrester
US4475139A (en) * 1981-05-29 1984-10-02 Canadian General Electric Company Limited Thyristor-switched capacitor apparatus
EP0196370A1 (de) * 1985-02-07 1986-10-08 BBC Brown Boveri AG Verfahren zur Herstellung eines Überspannungsableiters unter Verwendung eines Varistors auf ZnO-Basis und danach hergestellter Überspannungsableiter
US6342828B1 (en) * 1997-01-16 2002-01-29 Asea Brown Boveri Ag Resistor which is designed in the form of a column and is resistant to high current in particular a varistor on a metal-oxide base, and method for producing such a resistor
EA025064B1 (ru) * 2013-06-26 2016-11-30 Открытое Акционерное Общество "Нпо "Стример" Устройство для грозозащиты и линия электропередачи, снабженная таким устройством
WO2021126983A1 (en) * 2019-12-20 2021-06-24 Hubbell Incorporated Metal oxide varistor formulation

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2881134B1 (fr) 2005-01-24 2007-04-20 Areva T & D Sa Procede de preparation de ceramiques semi-conductrices constituees d'oxydes de metaux, notamment d'oxyde d'etain en particulier pour les varistances

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3515947A (en) * 1968-02-29 1970-06-02 Gen Electric Inclined arc chamber for a spark gap
US3642664A (en) * 1969-05-02 1972-02-15 Matsushita Electric Ind Co Ltd Voltage variable resistor
US3663458A (en) * 1967-10-09 1972-05-16 Matsushita Electric Ind Co Ltd Nonlinear resistors of bulk type
US3693053A (en) * 1971-10-29 1972-09-19 Gen Electric Metal oxide varistor polyphase transient voltage suppression

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663458A (en) * 1967-10-09 1972-05-16 Matsushita Electric Ind Co Ltd Nonlinear resistors of bulk type
US3515947A (en) * 1968-02-29 1970-06-02 Gen Electric Inclined arc chamber for a spark gap
US3642664A (en) * 1969-05-02 1972-02-15 Matsushita Electric Ind Co Ltd Voltage variable resistor
US3693053A (en) * 1971-10-29 1972-09-19 Gen Electric Metal oxide varistor polyphase transient voltage suppression

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3899451A (en) * 1972-09-11 1975-08-12 Tokyo Shibaura Electric Co Oxide varistor
DE2500291A1 (de) 1974-02-20 1975-08-21 Matsushita Electric Ind Co Ltd Spannungsabhaengiger widerstand
DE2500291B2 (de) 1974-02-20 1977-02-10 Matsushita Electric Industrial Co., Ltd., Kadotna, Osaka (Japan) Spannungsabhaengiger widerstand mit einer spannungsabhaengigkeit allein aufgrund der masse seines gesinterten koerpers
US3999159A (en) * 1974-04-05 1976-12-21 Matsushita Electric Industrial Co., Ltd. Voltage-dependent resistor
US4035693A (en) * 1974-07-02 1977-07-12 Siemens Aktiengesellschaft Surge voltage arrester with spark gaps and voltage-dependent resistors
US4172268A (en) * 1976-09-30 1979-10-23 Tokyo Shibaura Denki Kabushiki Kaisha Direct current circuit interrupting apparatus
US4161012A (en) * 1977-03-02 1979-07-10 Joslyn Mfg. And Supply Co. High voltage protection apparatus
US4219862A (en) * 1977-06-22 1980-08-26 Mitsubishi Denki Kabushiki Kaisha Lightning arrester device
FR2395627A1 (fr) * 1977-06-22 1979-01-19 Mitsubishi Electric Corp Dispositif formant parafoudre
FR2405553A1 (fr) * 1977-10-07 1979-05-04 Mitsubishi Electric Corp Perfectionnement a un parafoudre enferme
US4292619A (en) * 1978-01-12 1981-09-29 U.S. Philips Corporation Resistance material
US4349855A (en) * 1978-03-18 1982-09-14 Mitsubishi Denki Kabushiki Kaisha Lightning arrester
US4258407A (en) * 1978-03-18 1981-03-24 Mitsubishi Denki Kabushiki Kaisha Lightning arrester device for power transmission line
US4308566A (en) * 1979-01-11 1981-12-29 Mitsubishi Denki Kabushiki Kaisha Lightning arrester device for power transmission line
US4352139A (en) * 1980-02-04 1982-09-28 Rte Corporation Flexible connector for H.V. arrester
US4475139A (en) * 1981-05-29 1984-10-02 Canadian General Electric Company Limited Thyristor-switched capacitor apparatus
EP0196370A1 (de) * 1985-02-07 1986-10-08 BBC Brown Boveri AG Verfahren zur Herstellung eines Überspannungsableiters unter Verwendung eines Varistors auf ZnO-Basis und danach hergestellter Überspannungsableiter
US4729053A (en) * 1985-02-07 1988-03-01 Bbc Brown, Boveri & Company, Limited Process for the production of a lightning arrester and products produced thereby
US4816959A (en) * 1985-02-07 1989-03-28 Asea Brown Boveri Ltd. Lightning arrester including an active resistor core
US6342828B1 (en) * 1997-01-16 2002-01-29 Asea Brown Boveri Ag Resistor which is designed in the form of a column and is resistant to high current in particular a varistor on a metal-oxide base, and method for producing such a resistor
EA025064B1 (ru) * 2013-06-26 2016-11-30 Открытое Акционерное Общество "Нпо "Стример" Устройство для грозозащиты и линия электропередачи, снабженная таким устройством
WO2021126983A1 (en) * 2019-12-20 2021-06-24 Hubbell Incorporated Metal oxide varistor formulation
US11315709B2 (en) 2019-12-20 2022-04-26 Hubbell Incorporated Metal oxide varistor formulation
CN115136260A (zh) * 2019-12-20 2022-09-30 豪倍公司 金属氧化物变阻器配方
EP4078627A4 (en) * 2019-12-20 2024-06-26 Hubbell Incorporated METAL OXIDE VARISTOR FORMULATION

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NL7302903A (ja) 1973-09-04
GB1381246A (en) 1975-01-22
NL169651C (nl) 1982-08-02
FR2174176A1 (ja) 1973-10-12
IT977552B (it) 1974-09-20
FR2174176B1 (ja) 1984-03-30
CA968066A (en) 1975-05-20
NL169651B (nl) 1982-03-01

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