US3793984A - Apparatus for the production of closed end tubes of semiconductor material - Google Patents

Apparatus for the production of closed end tubes of semiconductor material Download PDF

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Publication number
US3793984A
US3793984A US00306011A US3793984DA US3793984A US 3793984 A US3793984 A US 3793984A US 00306011 A US00306011 A US 00306011A US 3793984D A US3793984D A US 3793984DA US 3793984 A US3793984 A US 3793984A
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US
United States
Prior art keywords
cap member
tube
semiconductor material
receiver body
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00306011A
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English (en)
Inventor
A Kasper
W Dietze
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Application granted granted Critical
Publication of US3793984A publication Critical patent/US3793984A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/073—Hollow body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Definitions

  • ABSTRACT An apparatus for producing semiconductor tubes by means of dep ositing semiconductor maie'fi'affiafifa gaseous atmosphere onto a heated receiver body, the receiver body consists of a concentric assembly of inner and outer conductive members connected at one end by means of cooperating screw threads on the two members, and a conical end cap member covering the end of the assembly and forming a smooth continuous surface with the exterior of the outer member.
  • the Dietze application describes several varieties of cap member, however, all of the cap members of the Dietze application form, with the tube member, a right circular cylinder, having an end surface normal to the axis of the receiver body. It has been found that heating of the receiver body is not uniform over its entire surface with such an arrangement, with the result that the deposited semiconductor material hasa non-uniform thickness. Accordingly, it is desirable to provide a receiver body in which the heating of the receiver body is uniform.
  • Another object of the present invention is to provide such a cap structure in which grinding of the receiver body after assembly to obtain a smooth, continuous surface between the cap member and the exterior of the tube can be reduced to a minimum.
  • a further object of the present invention is to provide a receiver body which has great mechanical stability.
  • an end cap for closing the end surface of an axially symmetric receiver body, having a convex, conical end surface coaxial with the axis of the receiver body, the edges of said convex end surface being rounded to form a smooth, continuous surface between the cap member and the exterior of the receiver body.
  • the body includes a central rod 10 and an outer tube 11 which surrounds the rod 10.
  • the tube 11 has an inwardly extending flange at its end, and the rod 10 and the tube 11 are interconnected by means of cooperating threads 12 disposed on the end of the rod 11, and on the inner surface of the inwardly extending flange.
  • the area of contact between the rod 10 and the tube 11 may be varied by relative rotation between the rod 10 and the tube 11.
  • a central bore 14 is provided in the end of the rod 10, and the stem of a cap member 13 is disposed in the bore and threadably connected therewith.
  • One set of the threads is provided on the external surface of the stem of the cap member 13, and a set of cooperating threads is provided within the bore 14.
  • the inner surface of the cap member 13 lies closely adjacent the upper end of the tube 11, and the outer surface is convexly conical in shape, being thickest near the center 15 and thinest near the peripheral edge 16.
  • the conical outer surface facilitates uniform temperature distribution throughout the receiver body, and enhances the deposition of a uniform thickness of semiconducting material thereon.
  • it provides a cap structure of greater mechanical stability, as compared with a thin flat cap structure. Because the outer edge 16 is thin, very little material is removed during grinding the outer edge to produce the desired smooth, continuous surface of the completed receiver body.
  • the cap 13 is made of the same material as the rod 10 and the tube 11, in order to enhance uniform heating over the entire surface of the receiver body.
  • the material is vitreous carbon, spectral carbon, or pyrolytic graphite.
  • a vacuum deposition chamber including a gaseous supply of such semiconductor material and electrical means to heat and mount a heated receiver body upon which said semiconductor material is deposited
  • said receiver body comprises a central rod formed of electrically conductive material a surrounding tube formed of electrically conductive material, and having an end in electrical contact with an end of said tube; and an electrically conductive cap member for covering said end of said tube, said cap member having a convex outer surface including a curved edge na] dimension of said tube, and said cap member has an annular inner surface adapted to lie closely adjacent the end surface of said tube.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
US00306011A 1971-11-24 1972-11-13 Apparatus for the production of closed end tubes of semiconductor material Expired - Lifetime US3793984A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2158257A DE2158257A1 (de) 1971-11-24 1971-11-24 Anordnung zum herstellen von einseitig geschlossenen rohren aus halbleitermaterial

Publications (1)

Publication Number Publication Date
US3793984A true US3793984A (en) 1974-02-26

Family

ID=5826011

Family Applications (1)

Application Number Title Priority Date Filing Date
US00306011A Expired - Lifetime US3793984A (en) 1971-11-24 1972-11-13 Apparatus for the production of closed end tubes of semiconductor material

Country Status (13)

Country Link
US (1) US3793984A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5743526B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) AT324434B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE787577R (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH550609A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DD (1) DD105727A6 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2158257A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DK (1) DK141557C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2160903B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1370988A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1046828B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7212471A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE375555B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453233A (en) * 1993-04-05 1995-09-26 Cvd, Inc. Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique
US5516957A (en) * 1991-12-26 1996-05-14 Uop Discrete molecular sieve and use
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
US6835956B1 (en) 1999-02-09 2004-12-28 Nichia Corporation Nitride semiconductor device and manufacturing method thereof
US7365369B2 (en) 1997-06-11 2008-04-29 Nichia Corporation Nitride semiconductor device
US20090278165A1 (en) * 2008-05-09 2009-11-12 National Chiao Tung University Light emitting device and fabrication method therefor

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB450959A (en) * 1934-10-22 1936-07-22 Robert Calvert Knight Young Electric resistance heaters
US2271838A (en) * 1939-11-06 1942-02-03 Dow Chemical Co Electric furnace resistor element
US2355343A (en) * 1941-07-23 1944-08-08 Ind De L Aluminum Sa Furnace for the electrothermal production of magnesium
US2858403A (en) * 1956-04-23 1958-10-28 Carborundum Co Silicon carbide immersion heating device
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
US3139363A (en) * 1960-01-04 1964-06-30 Texas Instruments Inc Method of making a silicon article by use of a removable core of tantalum
US3451772A (en) * 1967-06-14 1969-06-24 Air Reduction Production of ultrapure titanium nitride refractory articles
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB450959A (en) * 1934-10-22 1936-07-22 Robert Calvert Knight Young Electric resistance heaters
US2271838A (en) * 1939-11-06 1942-02-03 Dow Chemical Co Electric furnace resistor element
US2355343A (en) * 1941-07-23 1944-08-08 Ind De L Aluminum Sa Furnace for the electrothermal production of magnesium
US2858403A (en) * 1956-04-23 1958-10-28 Carborundum Co Silicon carbide immersion heating device
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
US3139363A (en) * 1960-01-04 1964-06-30 Texas Instruments Inc Method of making a silicon article by use of a removable core of tantalum
US3451772A (en) * 1967-06-14 1969-06-24 Air Reduction Production of ultrapure titanium nitride refractory articles
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5516957A (en) * 1991-12-26 1996-05-14 Uop Discrete molecular sieve and use
US5453233A (en) * 1993-04-05 1995-09-26 Cvd, Inc. Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique
US7365369B2 (en) 1997-06-11 2008-04-29 Nichia Corporation Nitride semiconductor device
US8592841B2 (en) 1997-07-25 2013-11-26 Nichia Corporation Nitride semiconductor device
US6835956B1 (en) 1999-02-09 2004-12-28 Nichia Corporation Nitride semiconductor device and manufacturing method thereof
US7083996B2 (en) 1999-02-09 2006-08-01 Nichia Corporation Nitride semiconductor device and manufacturing method thereof
US20060078022A1 (en) * 1999-03-04 2006-04-13 Tokuya Kozaki Nitride semiconductor laser device
US7015053B2 (en) 1999-03-04 2006-03-21 Nichia Corporation Nitride semiconductor laser device
US20040101986A1 (en) * 1999-03-04 2004-05-27 Nichia Corporation Nitride semiconductor laser device
US7496124B2 (en) 1999-03-04 2009-02-24 Nichia Corporation Nitride semiconductor laser device
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
US20090278165A1 (en) * 2008-05-09 2009-11-12 National Chiao Tung University Light emitting device and fabrication method therefor
US7977687B2 (en) 2008-05-09 2011-07-12 National Chiao Tung University Light emitter device

Also Published As

Publication number Publication date
DE2158257A1 (de) 1973-05-30
CH550609A (de) 1974-06-28
AT324434B (de) 1975-08-25
DK141557C (da) 1980-09-08
IT1046828B (it) 1980-07-31
SE375555B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-04-21
DD105727A6 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-05-12
NL7212471A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-05-28
GB1370988A (en) 1974-10-23
FR2160903B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-08-20
FR2160903A2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-07-06
BE787577R (fr) 1972-12-01
JPS5743526B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-09-16
DK141557B (da) 1980-04-21
JPS4863976A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-09-05

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