AT324434B - Anordnung zum herstellen von einseitig geschlossenen rohren aus halbleitermaterial - Google Patents

Anordnung zum herstellen von einseitig geschlossenen rohren aus halbleitermaterial

Info

Publication number
AT324434B
AT324434B AT843372A AT843372A AT324434B AT 324434 B AT324434 B AT 324434B AT 843372 A AT843372 A AT 843372A AT 843372 A AT843372 A AT 843372A AT 324434 B AT324434 B AT 324434B
Authority
AT
Austria
Prior art keywords
arrangement
manufacturing
semiconductor material
sided tubes
sided
Prior art date
Application number
AT843372A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT324434B publication Critical patent/AT324434B/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/073Hollow body
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
AT843372A 1971-11-24 1972-10-02 Anordnung zum herstellen von einseitig geschlossenen rohren aus halbleitermaterial AT324434B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2158257A DE2158257A1 (de) 1971-11-24 1971-11-24 Anordnung zum herstellen von einseitig geschlossenen rohren aus halbleitermaterial

Publications (1)

Publication Number Publication Date
AT324434B true AT324434B (de) 1975-08-25

Family

ID=5826011

Family Applications (1)

Application Number Title Priority Date Filing Date
AT843372A AT324434B (de) 1971-11-24 1972-10-02 Anordnung zum herstellen von einseitig geschlossenen rohren aus halbleitermaterial

Country Status (13)

Country Link
US (1) US3793984A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5743526B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) AT324434B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE787577R (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH550609A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DD (1) DD105727A6 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2158257A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DK (1) DK141557C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2160903B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1370988A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1046828B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7212471A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE375555B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478787A (en) * 1991-12-26 1995-12-26 Uop Discrete molecular sieve and use
US5453233A (en) * 1993-04-05 1995-09-26 Cvd, Inc. Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique
EP1014455B1 (en) 1997-07-25 2006-07-12 Nichia Corporation Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (en) * 1999-03-04 2009-12-16 Nichia Corporation Nitride semiconductor laser device
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB450959A (en) * 1934-10-22 1936-07-22 Robert Calvert Knight Young Electric resistance heaters
US2271838A (en) * 1939-11-06 1942-02-03 Dow Chemical Co Electric furnace resistor element
US2355343A (en) * 1941-07-23 1944-08-08 Ind De L Aluminum Sa Furnace for the electrothermal production of magnesium
US2858403A (en) * 1956-04-23 1958-10-28 Carborundum Co Silicon carbide immersion heating device
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
US3451772A (en) * 1967-06-14 1969-06-24 Air Reduction Production of ultrapure titanium nitride refractory articles
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus

Also Published As

Publication number Publication date
DE2158257A1 (de) 1973-05-30
CH550609A (de) 1974-06-28
DK141557C (da) 1980-09-08
IT1046828B (it) 1980-07-31
SE375555B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-04-21
DD105727A6 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-05-12
NL7212471A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-05-28
GB1370988A (en) 1974-10-23
FR2160903B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-08-20
FR2160903A2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-07-06
US3793984A (en) 1974-02-26
BE787577R (fr) 1972-12-01
JPS5743526B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-09-16
DK141557B (da) 1980-04-21
JPS4863976A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-09-05

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee