US3789366A - Random-access memory device using sequential-access memories - Google Patents

Random-access memory device using sequential-access memories Download PDF

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US3789366A
US3789366A US00280798A US3789366DA US3789366A US 3789366 A US3789366 A US 3789366A US 00280798 A US00280798 A US 00280798A US 3789366D A US3789366D A US 3789366DA US 3789366 A US3789366 A US 3789366A
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memory
circulating
memories
buffer memories
main
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T Itoh
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Takachiho Koheki KK
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F5/00—Methods or arrangements for data conversion without changing the order or content of the data handled
    • G06F5/06—Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising or timing, e.g. delay lines, FIFO buffers; over- or underrun control therefor
    • G06F5/16—Multiplexed systems, i.e. using two or more similar devices which are alternately accessed for enqueue and dequeue operations, e.g. ping-pong buffers
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G1/00—Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators; General aspects or details, e.g. selection emphasis on particular characters, dashed line or dotted line generation; Preprocessing of data
    • G09G1/02—Storage circuits

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  • No.: 280,798 A random-access memory device using at least one circulating main memory having a plurality of memory I i Apphcaflon Data zones allocated sequentially, and a plurality of circu- 1 commuallofl-mpan 0f N0. 26,831, P 9, lating bufler memories each having a memory capac- 1970, abandoned. ity equal to one-h th the memory capacity of the cir' culating main memory and each circulating in the [30] Foreign Application Priority Data same clock timing as the circulating main memory, the Apr. 18, 1969 Japan 44/2964? h" being an integer more than two. Blocks of binary information stored in the main memory are successive- [52] US. Cl.
  • 340/ 172.5 sively read out to selected ones of the buffer memories [51] Int. Cl. G061 3/14, G] Ic 21/02 by selecting corresponding ones of the memory zones [58] Field of Search 340/ 172.5, 173 RC, 174.] H, in response to zone selecting coded signals.
  • the num- 340/ 1 74.1 P ber of buffer memories is equal to twice the number of all memory zones of the circulating main memory.
  • References Cited The buffer memories are divided into two groups of UNITED STATES PATENTS the same number.
  • the contents of the circulating 3 337 231 6/1968 Peters 340 1725 main memory memories can be continuously read 3:623:005 11/1971 Roberts, Jr.
  • This invention relates to a memory device using a sequential-acess memory device.
  • sequential-access memory devices such as a magnetic drum and a magnetic disc etc.
  • random-access storages of high price e.g.; core memory
  • buffer memories to synchronize the block timing of the sequential-access memory device with the clock timing of an external circuitry (e.g.; a logical operation unit). Therefore, the bit-cost of conventional sequential-access memory devices is relatively high.
  • An object of this invention is to provide a memory device using a sequential-access memory device of low cost capable of readily synchronizing with the clock timing of an external circuitry by the use of sequentialaccess buffer memory devices only.
  • Another object of this invention is to provide a random-access memory device using sequential-access memories capable of continuously reading out the contents of at least one sequential-access memory in the desired order in a block-wise manner.
  • the random access memory device ot'this invention is provided with at least one circulating main memory having a memory capacity of GI: bits where G is a larger number and h is an integer greater than two and a plurality ofcirculating buffer memories each having a memory capacity of G bits and each circulating in the same clock timing as the main memory.
  • a block of binary information ofG bits stored in the main memory is read out to one ofthe buffer memories by selecting one of memory zones which are allocated sequentially in the main memory so as to divide a circulating period of the main memory into one-h th. If a plurality of main memories are employed, selection of a desired one of the main memories is further necessary. In both cases, a desired number of blocks of binary information stored in one or more of the main memories can be read out in the desired order by selecting the buffer memories in a predetermined order.
  • the plurality of buffer memories the number of which is equal to twice the number of all memory zones of one of the main memories are provided, and if the contents of desired memory zones of the main memory or memories are read out alternately to two equally divided groups of the buffer memories, the contents of the main memory or memories can be continuously read out by selecting alternately the two groups and further by selecting successively the buffer memories in the same group.
  • the memory device of this invention is suitable to select continuously a train of desired blocks of information from a great number of blocks ofinformation to be selected, such as ideograms (e.g.; Chinese characters).
  • ideograms e.g.; Chinese characters
  • FIGS. IA and IB are diagrams explanatory of the construction and operation of a combination formed by a main memory and a buffer memory used in the memory device of this invention.
  • FIG. 2 is a block diagram illustrating an embodiment of this invention
  • FIG. 3 is a block diagram illustrating another embodiment of this invention.
  • FIG. 4 is a block diagram explanatory of an example of a selecting unit used in the memory device of this invention.
  • FIG. 5 is a block diagram explanatory of an example of a delay line memory used in the memory device of this invention.
  • FIG. 6 is a block diagram illustrating an example of an address code distributor X employed in the device of this invention.
  • FIG. 7 is a block diagram illustrating an example of an selecting circuit B employed in the device of this invention.
  • FIG. 8 is a block diagram illustrating an example of a data selector employed in the example shown in FIG.
  • FIG. 9 is a block diagram illustrating an example of a switching circuit employed in the device of this inven tion.
  • FIGS. 10 and I I are time charts explanatory ofoperations of the device of this invention.
  • a memory device of this invention at least one circulating main memory C and a plurality of circulating buffer memories A are used.
  • the main memory C has a plurality of memory zones (e.g.; six memory zones as shown in FIGS. 1A and 18) each having a memory capacity G bits where for example G is 1024 and h is 10 and allocated sequentially in the main memory C so as to divide a circulating period of the main memory C into one-h th.
  • the buffer memory A has a memory capacity ofG bits and circulates in the same clock timing as the clock timing of the main memory C. Therefore. the memory capacity of the buffer memory A is equal to the memory capacity of each memory zone of the main memory C.
  • FIG. 1A shows a condition where a part of the contents stored in one of the memory zones of the main memory C is read out to the buffer memory A
  • FIG. 1B shows a condition where contents stored in one of the memory zones of the main memory C have been completely read out to the buffer memory A.
  • Each of the above mentioned circulating memories A and C can be constructed by the use of a magnetostrictive delay-line by way of example, as disclosed in a publication Convention on Digital-Computer Techniques", Mar. I956, pages 497 508.
  • This embodiment comprises a plurality of :1 main memories C, to C,,, twenty buffer memories A, to A terminals F, to F for receiving respectively zone-selecting coded signals, registers R to R for respectively storing temporarily the zoneselecting coded signals (e.g.; six or twelve-unit code), selecting circuits B, to 8 each comprising a plurality of AND circuits by way of example for selecting one of the main memories C, to C, and one of the memory zones of the selected main memory C,.
  • selecting circuits B, to 8 each comprising a plurality of AND circuits by way of example for selecting one of the main memories C, to C, and one of the memory zones of the selected main memory C,.
  • a switching circuit D comprising a plurality of AND circuits by way of example for selecting contents of the buffer memories A, to A in the desired order.
  • a cathode ray tube CRT coupled to the switching circuit D to display the read-out contents of the buffer memories A, to A
  • a character of font information i.e.; pattern information indicative of each one of a set of types obtained by scanning the pattern of a corre sponding type so as to display on the cathode ray tube CRT is stored.
  • each of the main memories C, to C stores ten characters of font information.
  • the buffer memory A, A,, or A, since the buffer memory A, A, or A,, has the memory capacity equal to one-h th the memory capacity of the main memory C,, C,,, or C a character of font information is stored in each of the buffer memories A, to A in a case where ten characters of font information are respectively stored in the ten memory zones of each of the main memories C to C
  • this zone selecting coded signal is temporarily stored in the register R,.
  • the selecting circuit B selects one of the main memories C, to C and one of ten memory zones of the main memory C,, C or C is selected.
  • the contents of the selected memory zone i.c.; a character of font information
  • Each group of circuitry w F2 R2, B2) v mla! m B19) or (A20, F20 am B operates in a similar manner as mentioned above.
  • IO characters of font information are stored in one of two groups of IO buffer memories (A, to A,,) and (A,, to A in one circulating period of the main memory C, C or C,,.
  • desired twenty characters of font information can be read out to the buffer memories A, to A in two circulating periods of the main memory C,, C,, or C
  • the switching circuit D reads out alternately the contents of the two groups of buffer memories (A, to A,,) and (A,, to A in synchronism with the circulating periods of the main memories C, to C,
  • the contents of the buffer memories (A, to A,,) or (A,, to A of the same group are successively read out in one circulating period of the main memory (C,, C characterpatterns each indicative of a single type can be displayed on the cathode ray tube CRT.
  • each of the selecting units SU,, SU SU,, is provided with two buffer memories (e.g.; A, and A,,) which are controlled by single selecting means as mentioned below.
  • two hundred and 56 main mem- Dries C Cg, C3, C4, C251, C252, C253, C254, C255 and C are provided by way of example as shown in FIG. 4.
  • ten selecting units SU,, SU SU are provided for selecting contents of the group of main memories.
  • Each of the selecting units SU,, SU SU,, comprises a group of twelve terminals F, registers J and K, a memory selector M comprising a plurality of AND circuits by way of example, a zone selector T comprising a plurality of AND circuits by way of example, an AND circuit Q, and a NAND circuit P, and buffer memories (A, and A,,).
  • the group of twelve terminals F receive the zone selecting coded signal of twelve unit code from an address code distributor X (FIG. 3) 3) in the parallel signal configuration.
  • the register J stores temporarily the zone selecting coded signal of parallel configuration applied from the twelve terminals F during one circulating period of the main memory C.
  • the register K stores temporarily the zone selecting coded signal shifted from the register I in response to a shift pulse s generated from a clock generator (not shown) so as to be timed with the transition instant from the preceding one to the succeeding one of adjacent two circulating periods of the main memory C.
  • the memory selector M selects one of the main memories C, to C in accordance with a part of the zone selecting coded signal applied through connection lines It, to k,,.
  • the zone selector T generates a gate signal m timed with the time slot of a desired memory zone of the selected main memory C,, C or C in accordance with a part of the zone selecting coded signal applied through connection lines k to k when the zone selecting coded signal from the connection lines k to k coincides with a reference signal 14' of four-unit parallel configuration.
  • This reference signal w is generated from a scale-of-lO counter (not shown), in synchronism with transition instants from the preceding one to the succeeding one of adjacent two memory zones. if each of the main memories C, to C has ten memory zones.
  • Tegate signal generated from the zone selector T is applied to respective one input terminals of both the circuits P and 0.
  • another gate signal v is applied from a bistable circuit (not shown).
  • This gate signal v assumes one of two possible states (I" and 0"; or and which are alternately switched in synchronism with the circulating periods of the main memory C.
  • the output of the circuits P and Q are alternatively applied to the buffer memory A, or A,, in synchronism with the gate signal to from the zone selector T so that the contents of the selected memory zone of the selected main memory C,, C or C are stored in the buffer memory A or A,,.
  • the respective outputs of the buffer memories A, and A, are applied to the switching circuit D through connection lines a, and a,, respectively.
  • one of the zone selecting coded signals is shifted to the register K in synchronism with one of the circulating periods of the main memory C to select a desired memory zone of the main memory C,, C C at the instant circulating period. while another of the zone selecting coded signals is temporarily stored in the register I to select a desired memory zone of the main memory C,, C,., or C at the just succeeding circulating period.
  • the switching circuit D selects successively connection lines a,.,, a,.,
  • connection lines a, a,., a, a and 0 the contents of buffer memories A,, A,,,, A,,, A can be applied continuously to the cathode ray tube CRT.
  • selection of connection lines a, a,.,, a is timed with a circulating period of the main memory C
  • selection of connection lines a 0 0 is timed with an immediately succeeding circulating period of the main memory.
  • each of the main memories C and the buffer memories A is a circulating memory using a magnetostrictive delay line by way of example as shown in FIG. 5.
  • this circulating memory has a first terminal I receiving an input serial information signal, a second terminal II receiving a gate signal having one of two possible states, a third terminal III sending out an output serial information signal and a fourth terminal IV receiving clock pulses used to control the write-in and read-out of the serial information signal.
  • the address code distributor X comprises, for example a clock generator 103, a decimal counter I02, a flip-flop circuit 101, a memory 100, a four line-to-ten line decoder 104, and ten AND circuits 105 to 114, by way ofexample.
  • the clock generator 103 generates a clock pulse train 3 timed with the grand cycle (circulating period) of the main memory C, and clock pulse trains (b, and (b, which are timed with one-tenth of the grand cycle of the main memory C as shown in FIGS. and 11.
  • the decimal counter 102 counts pulses of the pulse train dz, and assumes successively counting states 0 to 9.
  • the flip-flop circuit I0] is set and reset in response to carry pulses from the decimal counter I02 and produces an output v, which is the same as a control output d,
  • the memory 100 generates address codes F in response to access pulses of the pulse train (b,, so that the address codes F are applied to all the selecting units SU.
  • the four line-to-ten line decoder 104 produces one of ten true outputs d, to d,,, in response to the instant states of four outputs w,, W2, W and w, of the decimal counter 102.
  • the true outputs d, to d,, are respectively applied to AND circuits 105 to I14 which are gated by pulses of the pulse train d: so that control pulses P5,, P8,, FS, and F8,,, are successively generated as shown in FIGS. 10 and 1].
  • control pulse FS is applied to the selecting unit SU, together with the address codes F.
  • an example of the memory selector M comprises a data selector 201 for selecting one of the main memories C, to C in response to four output bits k, to k, of the register K, a data selector 202 for selecting one of the main memories C,, to C in response to four output bits k, to k, of the register K, a data selector 216 for selecting one of the main memories C to C in response to four output bits k, to k, of the register K, and a data selector 217 for selecting one of respective outputs of the data selectors 201 to 216 in response to four output bits k, to k, of the register K.
  • the output rn of the data selec tor 217 is applied to buffer memories A, and A,,,,,,
  • Each of the data selectors 201, 202, 2 l6, and 217 comprises, as shown in FIG. 8 for the example of the data selector 20], NOT circuits 301, 302, 303, 304, 305, 306, 307, 308 and 309, AND circuits 310 to 325, and an OR circuit 326. Accordingly, one of the main memories (C, to C,,,) is selected by the data selector 201 in response to the four output bits k, to k, of the register K in synchronism with an enable pulse EN.
  • zone selector T comprises Exclusive OR circuits 218 to 221, NOT circuits 222 to 225, a NAND circuit 226 and a NOT circuit 227.
  • Four output bits k,,, k,,,, k,, and k, are respectively applied to the Exclusive OR circuits 218 to 221, while outputs w,, W W and w, of the decimal counter 102 shown in FIG. 6 are respectively applied to the Exclusive OR circuits 218 to 221.
  • an output t assumes a state With reference to FIG.
  • an example of the switching circuit D comprises a NOT circuit 40] receiving the control output (I, from the flip-flop circuit 101 shown in FIG. 6, AND circuits 402 to 421, and an OR circuit 422.
  • outputs a, and a, of the selecting unit SU are respectively applied to the AND circuits 402 and 403 together with the true output (1, of the four Iine-to-ten line decoder 104.
  • the input and output ofthe NOT circuit 401 are respectively applied to the AND circuits 402 and 403. All the outputs of the AND circuits 402 to 421 are applied to the cathode-ray tube CRT through the OR circuit 422.
  • the address codes F of the memory are set into the respective registers J of the selecting units SU, to SU,,, shown in FIGS. 3 and 4 in response to control pulses ES, to P5,, from the AND circuits I05 to I14 shown in FIG. 6.
  • the address code F set in the register J is transferred to the register K in response to a pulse 5 timed with the end of the first grand cycle.
  • Contents of the mainriemories (C to C l corresponding to address codes, which are read out from the memory 100 at the begining of the first grand cycle, are applied to the cathode-ray tube CRT at the begining of the third grand cycle.
  • a random-access memory device comprising: a plurality of circulating main memories having a plurality of memory zones allocated sequentially; a plurality of circulating buffer memories arranged in parallel with respect to said main memories and each buffer memory having a memory capacity equal to I/h of the memory capacity of each circulating main memory and each buffer memory circulating in the same clock timing as each circulating main memory, wherein 11" is an integer greater than two and the number of said buffer memories being equal to twice the number of all memory zones of each of said main memories, and said buffer memories being equally divided into two groups; means for generating zone selecting coded signals; means coupled to each circulating main memory, said circulating buffer memories, and the zone selecting coded signal generating means for successively reading out blocks of binary information stored in each main memory to selected ones of the buffer memories including means for alternately selecting one and the other of said two groups; means for selecting a desired one of said circulating main memories and corresponding ones of the memory zones therein in response to said zone selecting coded signals and selection means coupled to said circulating buffer memories for selecting the
  • a random-access memory device comprising: at least one circulating main memory having a plurality of sequential memory zones; a plurality of circulating buffer memories all arranged in parallel with respect to said main memory and each having a memory capacity equal to l/h of the memory capacity of the circulating main memory and each circulating in response to the same clock timing as the circulating main memory to effect the serial storing of information from one of the memory zones of the main memory, where 11" is an integer greater than two, the number of said buffer memories being equal to twice the number of all memory zones of said main memory, and said buffer memories being equally divided into two groups; means for generating zone selecting coded signals; group selection means operatively coupled to said circulating buffer memories for alternately selecting one or the other of said two groups; reading-out means operatively coupled to said circulating main memory, said circulating buffer memories.
  • the coded signal generating means for successively reading out blocks of binary information stored in the main memory to said selected ones of said groups of buffer memories including means for connecting corresponding ones of the memory zones to said selected ones of said groups of buffer memories in response to said zone selecting coded signals; output terminal means; and switching means operatively coupled to the output of said circulating buffer memories and said output terminal means for selectively switching the output of each of said buffer memories to said output terminal means in a desired order after completion of the read-out from said circulating main memory.
  • a random-access memory device in which a plurality of said circulating main memories are provided and said reading-out means includes means for selecting a desired one of the circulat ing main memories.

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US00280798A 1969-04-18 1972-08-15 Random-access memory device using sequential-access memories Expired - Lifetime US3789366A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883854A (en) * 1973-11-30 1975-05-13 Ibm Interleaved memory control signal and data handling apparatus using pipelining techniques
US4030080A (en) * 1974-01-07 1977-06-14 Texas Instruments Incorporated Variable module memory
US4194245A (en) * 1978-03-06 1980-03-18 International Business Machines Corporation System for randomly accessing a recirculating memory
EP0332972A1 (de) * 1988-03-15 1989-09-20 Siemens Aktiengesellschaft Verfahren zur Datenübertragung und Anordnung zur Durchführung des Verfahrens
US20160154733A1 (en) * 2014-12-01 2016-06-02 Samsung Electronics Co., Ltd. Method of operating solid state drive

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3013254A (en) * 1957-01-23 1961-12-12 Gen Electric Information storage apparatus
US3024993A (en) * 1953-01-23 1962-03-13 Int Standard Electric Corp Intelligence storage equipment
US3387281A (en) * 1965-11-12 1968-06-04 Bell Telephone Labor Inc Information storage arrangement employing circulating memories
US3587062A (en) * 1969-09-11 1971-06-22 Bunker Ramo Read-write control system for a recirculating storage means
US3623005A (en) * 1967-08-01 1971-11-23 Ultronic Systems Corp Video display apparatus employing a combination of recirculating buffers
US3711836A (en) * 1970-09-10 1973-01-16 Dirks Electronics Corp Cyclic data handling systems

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3024993A (en) * 1953-01-23 1962-03-13 Int Standard Electric Corp Intelligence storage equipment
US3013254A (en) * 1957-01-23 1961-12-12 Gen Electric Information storage apparatus
US3387281A (en) * 1965-11-12 1968-06-04 Bell Telephone Labor Inc Information storage arrangement employing circulating memories
US3623005A (en) * 1967-08-01 1971-11-23 Ultronic Systems Corp Video display apparatus employing a combination of recirculating buffers
US3587062A (en) * 1969-09-11 1971-06-22 Bunker Ramo Read-write control system for a recirculating storage means
US3711836A (en) * 1970-09-10 1973-01-16 Dirks Electronics Corp Cyclic data handling systems

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883854A (en) * 1973-11-30 1975-05-13 Ibm Interleaved memory control signal and data handling apparatus using pipelining techniques
US4030080A (en) * 1974-01-07 1977-06-14 Texas Instruments Incorporated Variable module memory
US4194245A (en) * 1978-03-06 1980-03-18 International Business Machines Corporation System for randomly accessing a recirculating memory
EP0332972A1 (de) * 1988-03-15 1989-09-20 Siemens Aktiengesellschaft Verfahren zur Datenübertragung und Anordnung zur Durchführung des Verfahrens
US20160154733A1 (en) * 2014-12-01 2016-06-02 Samsung Electronics Co., Ltd. Method of operating solid state drive

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DE2017879B2 (de) 1974-10-24
DE2017879C3 (de) 1975-07-31
JPS5022379B1 (pt) 1975-07-30
GB1311203A (en) 1973-03-28
DE2017879A1 (de) 1970-11-19

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