US3788896A - Method for producing bubble domains in magnetic film-substrate structures - Google Patents

Method for producing bubble domains in magnetic film-substrate structures Download PDF

Info

Publication number
US3788896A
US3788896A US00101787A US3788896DA US3788896A US 3788896 A US3788896 A US 3788896A US 00101787 A US00101787 A US 00101787A US 3788896D A US3788896D A US 3788896DA US 3788896 A US3788896 A US 3788896A
Authority
US
United States
Prior art keywords
film
substrate
garnet
iron
room temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00101787A
Other languages
English (en)
Inventor
J Mee
P Besser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
North American Rockwell Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Rockwell Corp filed Critical North American Rockwell Corp
Application granted granted Critical
Publication of US3788896A publication Critical patent/US3788896A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/24—Garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy

Definitions

  • a method for producing a bubble domain in a magnetic single crystal garnet film-substrate structure involves the epitaxial deposition of an iron garnet film of the proper orientation and having a negative magnetostriction constant on a garnet substrate in which the room temperature lattice constant of the film is larger than the room temperature lattice con stant of the substrate by an amount greater than about 0.035 angstrom.
  • This invention relates to bubble domains and more particularly to a method of forming a film having bubble domains therein.
  • Some iron garnet film-substrate structures were observed to have domains whose magnetization directions are in the plane of the film in. contrast to the desired bubble domains whose magnetization directions are perpendicular to the plane of the film.
  • a specific step in the method involves depositing a single crystal iron garnet film of the proper crystallographic orientation and having a negative magnetostriction constant on a substrate in which the room temperaturelattice constant of the film is larger than the room temperature lattice con- 3,788,896 Patented Jan. 29, 1974 apparent from the following detailed description wherein a preferred embodiment of the present invention is clearly shown.
  • the drawing shows a magnetic bubble domain filmsubstrate structure made in accordance with the method of this invention.
  • This invention involves a process in which a single crystal iron garnet material is chemically vapor deposited to form a film on a substrate. It is necessary that the single crystal material have the proper crystallographic orientation to take advantage of the negative magnetostriction.
  • the room lattice constant of the deposited film is larger than the room lattice constant of the substrate by an amount greater than about 0.035 angstrom.
  • the resultant film-substrate structure has a craze-free film with bubble domains therein.
  • the normal source of uniaxial anisotropy observed in magnetic material is the crystal structure of the material.
  • a A 0 negative magnetostriction constants
  • o' 0 easy axis of magnetization if the platelet is in tension
  • o' 0 hard axis if the platelet is in compression
  • 0' is the stress in the plane of the material.
  • the room temperature magnetostriction constants of selected iron garnets are listed in the following table.
  • Magnetostriction constant Iron garnet Moo X10 Mn
  • the values of the magnetostriction constants of the iron garnet material, as well as its magnetization, can be varied by depositing a film containing a mixture of two or more pure iron garnets and/ or by substituting other cations for iron ions.
  • the dominant source of uniaxial anisotropy is the magnetostrictive efiect resulting from the stress existing in the film. This stress is due to the difference between the lattice constants and the thermal expansion coefiicients of the film and substrate and may be in the form of tension or compression.
  • This invention specifically covers a method of forming a bubble domain structure by depositing a magnetic single crystal garnet film of the proper orientation and having a negative magnetostriction constant on a substrate in which the film is in tension.
  • an oxide substrate is preferably subjected to a chemical vapor deposition step to provide a thin film of magnetic bubble domain material, film 12.
  • the deposition step is carried out in accordance with the co-pending application, Ser. No. 833,268 filed June 16, 1969 and now abandoned, and assigned to the assignee of the present invention. This pending patent application is incorporated herewith by reference hereto.
  • the Q constituent of the film formulation is taken from the group consisting of iron, iron and aluminum, iron and gallium, iron and indium, iron and scandium, iron and titalium, iron and vanadium, iron and chromium, and iron and manganese.
  • a preferred substrate material is samarium gallium garnet when the film material is gadolinium iron garnet.
  • an iron garnet film of the proper orientation and having a negative magnetostriction constant is deposited on a garnet substrate in which the room temperature lattice constant of the film is larger than the room temperature lattice constant of the substrate by an amount greater than about 0.035 angstrom.
  • the film lattice constant exceeds the substrate lattice constant by an amount greater than about 0.035 angstrom the film is in tension and bubble domains are present therein.
  • the film lattice constant is larger than the substrate lattice constant by an amount less than about 0.035 angstrom, the film is in compression and there are no bubble domains since the normal to plane of the film is the hard axis and the domain magnetizations lie in the plane.
  • the difference in the coefficients of thermal expansion between the fihn and the substrate contributes to total stress present in the film.
  • the thermal expansion stress contribution is within acceptable limits as long as the coefiicient of thermal expansion of the substrate is the same as or lower than that of the film by an amount not more than 1X10-/ C.
  • a certain amount of mismatch between film-substrate room temperature lattice constants and/or thermal expansion characteristics is required in order to provide the stress which produces the uniaxial anisotropy necessary for bubble domain formation. It film and substrate are too closely matched in both lattice constant and thermal expansion, the proper stress necessary for bubble domain formation will not be achieved.
  • the substrate 10 is monocrystalline garnet having a I Q O formulation wherein the J constituent of the wafer formulation is at least one element selected from the group consisting of cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, lanthanum, yttrium, calcium, and bismuth and the Q constituent of the wafer formulation is at least one element selected from the group consisting of indium, gallium, scandium, titanium, vanadium, chromium, manganese, rhodium, zirconium, hafnium, molybdenum, tungsten, niobium, tantalum, aluminum, phosphorus, arsenic and antimony.
  • the J constituent of the wafer formulation is at least one element selected from the group consisting of cerium, praseodymium
  • substrate materials are samarium gallium garnet, and yttrium aluminum garnet.
  • the film of the bubble domain material is a single crystal garnet film having a J Q 0 formulation wherein the J constituent of the film formulation has at least one element selected from the group of cerium, praseodymium,
  • a method of producing a bubble domain containing film-substrate structure comprising the step of depositing a magnetic film of a single crystal material of the proper orientation and having a negative magnetostriction constant on a substrate in which the magnetic film has a room temperature lattice constant which exceeds the room temperature lattice constant of the substrate by an amount greater than about 0.035 angstrom.
  • a method of producing a bubble domain containing film-substrate structure comprising the step of depositing an iron garnet film of the proper orientation and having a negative magnetostriction constant on a substrate in which the iron garnet film has a room temperature lattice constant which exceeds the room temperature lattice constant of the substrate by an amount greater than about 0.035 angstrom.
  • a method of producing a bubble domain containing film-substrate structure comprising the step of depositing angstrom.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US00101787A 1970-12-28 1970-12-28 Method for producing bubble domains in magnetic film-substrate structures Expired - Lifetime US3788896A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10178770A 1970-12-28 1970-12-28

Publications (1)

Publication Number Publication Date
US3788896A true US3788896A (en) 1974-01-29

Family

ID=22286409

Family Applications (1)

Application Number Title Priority Date Filing Date
US00101787A Expired - Lifetime US3788896A (en) 1970-12-28 1970-12-28 Method for producing bubble domains in magnetic film-substrate structures

Country Status (6)

Country Link
US (1) US3788896A (enExample)
CA (1) CA921775A (enExample)
DE (1) DE2165296C3 (enExample)
FR (1) FR2121046A5 (enExample)
GB (1) GB1367121A (enExample)
NL (1) NL7115050A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946124A (en) * 1970-03-04 1976-03-23 Rockwell International Corporation Method of forming a composite structure
JPS5312099A (en) * 1976-07-19 1978-02-03 Philips Nv Magnetic structure

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7606482A (nl) * 1976-06-16 1977-12-20 Philips Nv Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm.
DE3234853A1 (de) * 1982-09-21 1984-03-22 Philips Patentverwaltung Gmbh, 2000 Hamburg Scheibenresonator mit einem substrat aus einem granatmaterial und mit einer auf dem substrat angebrachten epitaxialen schicht aus einem ferrimagnetischen granatmaterial

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946124A (en) * 1970-03-04 1976-03-23 Rockwell International Corporation Method of forming a composite structure
JPS5312099A (en) * 1976-07-19 1978-02-03 Philips Nv Magnetic structure

Also Published As

Publication number Publication date
DE2165296A1 (de) 1972-07-13
GB1367121A (en) 1974-09-18
DE2165296C3 (de) 1974-09-26
CA921775A (en) 1973-02-27
DE2165296B2 (de) 1974-01-31
FR2121046A5 (enExample) 1972-08-18
NL7115050A (enExample) 1972-06-30

Similar Documents

Publication Publication Date Title
Emori et al. Ferrimagnetic insulators for spintronics: Beyond garnets
Clark et al. Magnetocrystalline Anisotropy in Cubic Rare Earth‐Fe2 Compounds
Besser et al. A stress model for heteroepitaxial magnetic oxide films grown by chemical vapor deposition
Bhoi et al. Stress-induced magnetic properties of PLD-grown high-quality ultrathin YIG films
CA1127054A (en) Temperature-stabilized low-loss ferrite films
US4698820A (en) Magnetic device and method of manufacture
US4728178A (en) Faceted magneto-optical garnet layer and light modulator using the same
Van Uitert et al. Control of bubble domain properties in garnets
US3788896A (en) Method for producing bubble domains in magnetic film-substrate structures
US3745046A (en) Method for producing bubble domains in magnetic film-substrate structures
US3728152A (en) Method for producing bubble domains in magnetic film-substrate structures
EP0044109B1 (en) Device for propagating magnetic domains
Guo et al. Improved performance of YIG (Y3Fe5O12) films grown on Pt‐buffered Si substrates by chemical solution deposition technique
JPS6034806B2 (ja) 磁気バブル用磁性構造体
US6143435A (en) Magneto-optical thin-layer structure
Yosida Note on the magnetic properties of the FeSn system
Breed et al. New bubble materials with high peak velocity
Bolzoni et al. Magnetic properties of Y-type trigonal ferrites first-order magnetization processes in trigonal systems
JP2998644B2 (ja) 静磁波デバイス
Vittoria et al. Induced in-plane magnetic anisotropy in YIG films
DE2165299A1 (de) Verfahren zum Einschließen von Blasendomänen aus Film und Unterlage
Robertson et al. Garnet compositions for submicron bubbles with low damping constants
JPH0766114B2 (ja) 磁気光学素子材料
Stacy et al. Dependence of the uniaxial magnetic anisotropy on the misfit strain in Gd, Ga: YIG LPE films
JP5761746B2 (ja) 垂直磁気記録媒体および磁気記録装置