US3785891A - Method of manufacturing wires consisting at least superficially of boron and wires obtained by said method - Google Patents
Method of manufacturing wires consisting at least superficially of boron and wires obtained by said method Download PDFInfo
- Publication number
- US3785891A US3785891A US00190378A US3785891DA US3785891A US 3785891 A US3785891 A US 3785891A US 00190378 A US00190378 A US 00190378A US 3785891D A US3785891D A US 3785891DA US 3785891 A US3785891 A US 3785891A
- Authority
- US
- United States
- Prior art keywords
- boron
- wires
- etchant
- etching
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910001868 water Inorganic materials 0.000 claims abstract description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 235000011007 phosphoric acid Nutrition 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 24
- 239000000203 mixture Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
Definitions
- the invention relates to a method of manufacturing wires which at least at their surface consists of boron, in which boron is deposited on a support and in which a part of the boron surface is subsequently etched off by means of an etchant comprising nitric acid.
- etching offa part of the boron surface is to remove surface errors which have a detrimental influence on the mechanical properties of the wires and to enhance, inter alia, the tensile strength of the wires.
- the etching rate is then especially determined by the density of the boron oxide layer, by the rate at which these oxides dissolve in the etchant and by the presence or absence of impurities.
- An object of the present invention is to provide a method by which wires of great strength are also obtained, but in which etching off proceeds in a reliable and regular manner.
- such a method is characterized in that the boron surface is etched off with an etchant containing 55 to 85 percent by weight of H PO 2 to 20 percent by weight of HNO and to 35 by weight of water.
- the etching rate is at least approximately 2.5 micrometres per minute.
- the advantage of these etchants as compared with the use of nitric acid as an etchant is that this rate is immediately achieved for all wires and that, consequently, there is no run-in period. This means that after the etching rate of a bath is determined, any desired decrease in diameter may be obtained by etching the wires over a predetermined period.
- Etching rates of approximately 4.5 micrometres per minute and more may be obtained with etchants which contain from 70 to 85 percent by weight of H PO. 2
- EXAMPLE I An etching bath of the following composition was prepared 78.1 by weight of H PO 4.9 by weight of I-INO 17.0 by weight of H 0 by mixing 10 parts by volume of concentrated HNO (60 percent by weight of I-INO in water) with parts by volume of H PO (85 percent by weight of H PO in water). The etching rate was determined on wires having a diameter of 96 micrometres which had been obtained as follows:
- a tungsten wire having a diameter of 12.5 micrometres was passed at a constant rate through a space through which gaseous boron trichloride and hydrogen in a mixture ratio of 1:3 was passed.
- the tungsten wire was heated by a direct current passage at a temperature of approximately 1,100C.
- the etching-off rates were determined by etching wire pieces with the etchant (temperature C).
- etching time prior to after in minutes etching etching in am in um EXAMPLE 11 As in Example I, 5 wires having a diameter of 97 um were etched for one minute. The average tensile strength prior to etching was 229 kglsqmm, after etching it was 297 kg/sqmm, which is an increase of the average tensile strength by approximately 30 percent.
- EXAMPLE III EXAMPLE IV
- the etchant according to Example 1 was compared with an etchant consisting of 42.5 percent by weight'of HNO obtained by mixing 64 parts by volume of concentrated I-INO with 36 parts by volume of water. Then the results according to Table II were obtained.
- Table ll shows that with the etchant according to Example l, starting from the same average tensile strength level prior to etching for a comparable decrease in diameter, always higher values of the average tensile strength are obtained than with an etchant comprising nitric acid only.
- a method of improving the physical properties of a boron wire produced by deposition of a gaseous mixture comprising a volatile boron compound on a hot substrate comprising, etching the resultant boron surface with an etchant comprising 55 to 85 percent by weight of H POg, 2 to percent by weight of HNO and 10 to 35 percent by weight of water at a rate of at least about 2.5 micrometres per minute and at -a temperature sufficiently high to remove surface errors from the boron surface.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7015375A NL7015375A (enrdf_load_stackoverflow) | 1970-10-21 | 1970-10-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3785891A true US3785891A (en) | 1974-01-15 |
Family
ID=19811339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US00190378A Expired - Lifetime US3785891A (en) | 1970-10-21 | 1971-10-18 | Method of manufacturing wires consisting at least superficially of boron and wires obtained by said method |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3785891A (enrdf_load_stackoverflow) |
| JP (1) | JPS5129504B1 (enrdf_load_stackoverflow) |
| CA (1) | CA939596A (enrdf_load_stackoverflow) |
| FR (1) | FR2111549A5 (enrdf_load_stackoverflow) |
| GB (1) | GB1345219A (enrdf_load_stackoverflow) |
| NL (1) | NL7015375A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4319069A (en) * | 1980-07-25 | 1982-03-09 | Eastman Kodak Company | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
| US5399430A (en) * | 1986-08-18 | 1995-03-21 | Clemson University | Boron fibers having improved tensile strength |
| US5536360A (en) * | 1993-04-09 | 1996-07-16 | International Business Machines Corporation | Method for etching boron nitride |
| US5549971A (en) * | 1986-08-18 | 1996-08-27 | Clemson University | Laser assisted fiber growth |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2204101C1 (ru) * | 2001-12-29 | 2003-05-10 | ОАО "Азот" | Способ химической очистки внутренней поверхности теплообменного оборудования |
-
1970
- 1970-10-21 NL NL7015375A patent/NL7015375A/xx unknown
-
1971
- 1971-10-04 CA CA124,281A patent/CA939596A/en not_active Expired
- 1971-10-18 GB GB4825271A patent/GB1345219A/en not_active Expired
- 1971-10-18 US US00190378A patent/US3785891A/en not_active Expired - Lifetime
- 1971-10-18 JP JP46081753A patent/JPS5129504B1/ja active Pending
- 1971-10-19 FR FR7137517A patent/FR2111549A5/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4319069A (en) * | 1980-07-25 | 1982-03-09 | Eastman Kodak Company | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
| US5399430A (en) * | 1986-08-18 | 1995-03-21 | Clemson University | Boron fibers having improved tensile strength |
| US5549971A (en) * | 1986-08-18 | 1996-08-27 | Clemson University | Laser assisted fiber growth |
| US5536360A (en) * | 1993-04-09 | 1996-07-16 | International Business Machines Corporation | Method for etching boron nitride |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7015375A (enrdf_load_stackoverflow) | 1972-04-25 |
| GB1345219A (en) | 1974-01-30 |
| JPS5129504B1 (enrdf_load_stackoverflow) | 1976-08-26 |
| DE2149359B2 (de) | 1976-02-05 |
| DE2149359A1 (de) | 1972-04-27 |
| FR2111549A5 (enrdf_load_stackoverflow) | 1972-06-02 |
| CA939596A (en) | 1974-01-08 |
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